TW201034110A - Rapid cooling of a substrate by motion - Google Patents
Rapid cooling of a substrate by motion Download PDFInfo
- Publication number
- TW201034110A TW201034110A TW099102478A TW99102478A TW201034110A TW 201034110 A TW201034110 A TW 201034110A TW 099102478 A TW099102478 A TW 099102478A TW 99102478 A TW99102478 A TW 99102478A TW 201034110 A TW201034110 A TW 201034110A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- cooling
- temperature
- degrees celsius
- rate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 307
- 238000001816 cooling Methods 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 claims abstract description 136
- 230000008569 process Effects 0.000 claims abstract description 99
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- 238000012545 processing Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 44
- 239000002826 coolant Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- 239000013305 flexible fiber Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten halogen Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14789109P | 2009-01-28 | 2009-01-28 | |
| US12/694,634 US20100193154A1 (en) | 2009-01-28 | 2010-01-27 | Rapid cooling of a substrate by motion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201034110A true TW201034110A (en) | 2010-09-16 |
Family
ID=42396327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099102478A TW201034110A (en) | 2009-01-28 | 2010-01-28 | Rapid cooling of a substrate by motion |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20100193154A1 (ja) |
| JP (1) | JP2012516576A (ja) |
| KR (1) | KR20110108420A (ja) |
| CN (1) | CN102365719A (ja) |
| SG (1) | SG172959A1 (ja) |
| TW (1) | TW201034110A (ja) |
| WO (1) | WO2010088338A2 (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9245786B2 (en) * | 2011-06-02 | 2016-01-26 | Applied Materials, Inc. | Apparatus and methods for positioning a substrate using capacitive sensors |
| KR102022718B1 (ko) * | 2011-11-03 | 2019-09-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 급속 열처리 챔버 |
| US8939760B2 (en) * | 2012-02-09 | 2015-01-27 | Applied Materials, Inc. | Spike anneal residence time reduction in rapid thermal processing chambers |
| JP6457498B2 (ja) * | 2013-05-23 | 2019-01-23 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 半導体処理チャンバ用の被覆されたライナーアセンブリ |
| JP2017502529A (ja) * | 2013-11-11 | 2017-01-19 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 赤外線カメラを使用した低温ｒｔｐ制御 |
| CN105244262A (zh) * | 2014-07-09 | 2016-01-13 | 中芯国际集成电路制造(上海)有限公司 | 一种硅化镍后形成工艺 |
| US10957563B2 (en) | 2015-12-30 | 2021-03-23 | Mattson Technology, Inc. | Chamber wall heating for a millisecond anneal system |
| JP6839939B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| JP6839940B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| CN106602482B (zh) | 2016-12-29 | 2019-05-03 | 北京金风科创风电设备有限公司 | 围护结构及其内部的热源的动态散热方法、动态散热系统 |
| CN106655025B (zh) * | 2016-12-29 | 2019-10-29 | 北京金风科创风电设备有限公司 | 围护结构内动态散热布局的驱动系统 |
| CN110911320B (zh) * | 2019-12-09 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 冷却装置及其控制方法、半导体加工设备 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4857689A (en) * | 1988-03-23 | 1989-08-15 | High Temperature Engineering Corporation | Rapid thermal furnace for semiconductor processing |
| JPH07254545A (ja) * | 1994-03-15 | 1995-10-03 | Oki Electric Ind Co Ltd | 半導体基板の熱処理方法及びそのための装置 |
| JPH0817747A (ja) * | 1994-06-24 | 1996-01-19 | Tokyo Electron Ltd | 処理方法及び処理装置 |
| US6179466B1 (en) * | 1994-12-19 | 2001-01-30 | Applied Materials, Inc. | Method and apparatus for measuring substrate temperatures |
| JPH1154393A (ja) * | 1997-08-04 | 1999-02-26 | Komatsu Ltd | ウェハ温度調整装置およびその制御方法 |
| JPH11354516A (ja) * | 1998-06-08 | 1999-12-24 | Sony Corp | シリコン酸化膜形成装置及びシリコン酸化膜形成方法 |
| US6957690B1 (en) * | 1998-09-10 | 2005-10-25 | Asm America, Inc. | Apparatus for thermal treatment of substrates |
| EP1142001B1 (en) * | 1998-11-20 | 2007-10-03 | Steag RTP Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
| US6809035B2 (en) * | 2002-08-02 | 2004-10-26 | Wafermasters, Inc. | Hot plate annealing |
| KR100642644B1 (ko) * | 2005-01-20 | 2006-11-10 | 삼성전자주식회사 | 웨이퍼 냉각장치 및 방법 |
| US7378618B1 (en) * | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
| US8057602B2 (en) * | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
-
2010
- 2010-01-27 US US12/694,634 patent/US20100193154A1/en not_active Abandoned
- 2010-01-28 JP JP2011548280A patent/JP2012516576A/ja active Pending
- 2010-01-28 TW TW099102478A patent/TW201034110A/zh unknown
- 2010-01-28 KR KR1020117020115A patent/KR20110108420A/ko not_active Application Discontinuation
- 2010-01-28 WO PCT/US2010/022338 patent/WO2010088338A2/en active Application Filing
- 2010-01-28 SG SG2011050648A patent/SG172959A1/en unknown
- 2010-01-28 CN CN2010800158689A patent/CN102365719A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110108420A (ko) | 2011-10-05 |
| JP2012516576A (ja) | 2012-07-19 |
| CN102365719A (zh) | 2012-02-29 |
| US20100193154A1 (en) | 2010-08-05 |
| WO2010088338A2 (en) | 2010-08-05 |
| SG172959A1 (en) | 2011-08-29 |
| WO2010088338A3 (en) | 2010-11-18 |
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