TW201032274A - Substrate structure and manufacturing method thereof - Google Patents

Abstract

A substrate structure and a manufacturing method thereof are provided. The substrate structure includes the follow steps. First, a substrate having an insulation layer is provided. Then, a mask is provided. Then, plasma is provided and a groove pattern whose the bottom surface is plane is formed through the plasma. Then, an embedded pattern is formed on the groove pattern. As a result, the substrate structure is formed. Furthermore, repeating the above steps is to form a multi-layer board.

Description

201032274 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate structure and a method of fabricating the same, and in particular to a substrate structure having an embedded pattern and a method of fabricating the same. [Prior Art] Referring to Fig. 1, there is shown a schematic view of a substrate having a buried circuit. The conventional substrate structure 100 includes a substrate 102, an insulating layer 104, and a buried wiring layer 106, and has a trench 108. A buried wiring layer 106 is formed in the trench 108. In general, the way in which the grooves 108 are made is by laser processing. However, the processing path of the laser beam is only performed along the uniaxial direction, that is, the Z-axis direction, and the insulating layer 104 cannot be processed simultaneously on both sides of the Z-axis, thereby causing the groove width of the groove 108 to follow the groove depth. Shrinking phenomenon. Thus, the groove 108 of the groove is formed to have a substantially curved surface. The surface area of the grooved bottom surface 110 is limited, so that the electrical quality of the subsequently formed buried wiring layer 106 is not good. In addition, the laser processing can only perform groove processing on one side of the substrate 10 2 at a time. After the groove on the surface is completed, the groove can be continuously formed on the other side, which is quite time consuming and inconvenient. SUMMARY OF THE INVENTION The present invention relates to a substrate structure and a method of fabricating the same, in which a trench of a buried line is formed by plasma etching to form a groove bottom surface of the trench.

TW5145PA face. Thus, the area of the bottom surface of the trench is increased, so that the subsequently formed buried wiring layer has a relatively large electrical connection surface, which enhances the electrical properties of the buried wiring layer. According to the present invention, a substrate structure is proposed comprising a substrate and a first buried wiring layer. The substrate includes a first insulating layer. The first insulating layer has a first trench pattern, and a groove bottom surface of the first trench pattern is a flat surface. The first buried wiring layer is formed in the first trench pattern. According to the present invention, a method of fabricating a substrate structure is proposed. The manufacturing method includes the following steps. A substrate is provided, the substrate comprising a first insulating layer. A first photomask is provided. A plasma is provided, and a first trench pattern is etched through the first mask on the first insulating layer, and a bottom surface of the first trench pattern is planar. A first buried wiring layer is formed on the first trench pattern. In the following, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings, in which: FIG. The trench of the buried circuit is formed by plasma etching, so that the bottom surface of the groove is formed into a plane. Thus, the area of the bottom surface of the trench is increased, so that the subsequently formed buried wiring layer has a relatively large electrical connection surface, which improves the electrical quality of the buried wiring layer. The following description is made with two preferred embodiments. First Embodiment Referring to Figure 2, there is shown a schematic view of a base plate structure in accordance with a first embodiment of the present invention. The substrate structure 200 includes a substrate 202 and a first buried wiring layer 206. The substrate 202 has a first surface 208 and includes a first insulating layer 204 and a metal layer 214, such as a copper layer. A first insulating layer 204, such as a dielectric layer, is formed on the first surface 208 and in contact with the metal layer 214. The first insulating layer 204 has a first trench pattern 210, and the first buried wiring layer 206 is formed in the first trench pattern 210. The first trench pattern 210 of the present embodiment is formed by plasma etching. Referring to FIG. 3, an enlarged schematic view of the portion φ of the first trench pattern in FIG. 2 is shown. In order to clarify the feature of the first trench pattern by plasma etching, the first buried wiring layer 206 of Fig. 2 is omitted in Fig. 3. Since the plasma processing direction is not only the Z-axis direction, but also the first insulating layer 204 is etched in the two directions D1 and D2 of the Z-axis, the slope of the groove side wall 218 of the first trench pattern 210 is relatively moderate. Moreover, the groove bottom surface 212 of the first groove pattern 210 may be formed into a plane, such that the wearing shape of the first groove pattern 210 may be trapezoidal or even rectangular. Compared with the conventional trench 108 of FIG. 1, the first trench pattern 210 of the present embodiment has a larger trench surface area, which contributes to the electrical quality of the subsequently formed first buried wiring layer 206. . In addition, the first trench pattern 210 exposes a first trench opening 220 in the upper surface 218 of the first insulating layer 204. Under the proper control of the plasma process parameters, the width W1 of the groove bottom surface 212 of the first groove pattern 210 is less than or substantially equal to the width W2 of the first groove opening 220, and the width W1 of the embodiment is three points of the width W2. One is an example. Therefore, the first trench pattern 210 fabricated using the plasma in this embodiment has a larger trench surface area than the trench 108 conventionally illustrated in FIG. 1, and the first trench pattern 210 5 201032274

The slope of the groove side wall 218 of the TW5145PA is also moderate. As such, the first trench pattern 210 allows the subsequently formed first buried wiring layer 206 to have a better electrical quality. In practice, the ratio of the width W1 to the width W2 may depend on the requirements of the electrical quality, the process cost, and the process time. This embodiment is not intended to limit the ratio of the width W1 to the width W2. In addition, although the first trench pattern 210 of the present embodiment does not penetrate the first insulating layer, the first trench pattern of another embodiment may penetrate the first insulating layer 204. Referring to Figure 4, a schematic diagram of a first trench pattern of another embodiment is shown. A portion 226 of the first trench pattern 224 of the first insulating layer 204 penetrates the first insulating layer 204 and exposes a portion 228 of the first surface 208, and a second trench is exposed on the upper surface 216 of the first insulating layer 204. Opening 230. As such, the metal layer 214 can be electrically connected to other levels of circuitry by the portion 226 of the first trench pattern 224. Since the plasma etching direction is multi-directional, although the plasma cannot etch the metal layer 214 when it hits the metal layer 214, the first insulating layer 204 is further etched on both sides of the Z-axis, so that one part of the first surface 208 The width of 228 is getting wider and wider. Therefore, the width W3 of a portion 228 of the first surface 208 can be close to or equal to the width W4 of the second slot opening 230, which helps to enhance the electrical quality of the subsequently formed first buried wiring layer. The manufacturing method of the substrate structure according to the first embodiment of the present invention will be described in detail below with reference to Fig. 5 and Figs. 6A to 6C. Referring to Figure 5, there is shown a flow chart of a method of fabricating a substrate structure in accordance with a first embodiment of the present invention, the method of manufacture comprising the following steps. First, please refer to FIG. 6A at the same time, which shows a schematic diagram of the substrate of the base structure of the first embodiment 201032274. In step S502, a substrate 202 is provided. The substrate 202 has a first surface 208 and includes a first insulating layer 204 and a metal layer 214. Next, please refer to FIG. 6B at the same time, which shows a schematic diagram of the first photomask provided in FIG. 6A. In step S504, a first mask 222 is provided, and the first mask 222 has a hollow pattern 234. Next, please refer to Fig. 6C at the same time, which shows a schematic diagram of the plasma provided in Fig. 6B. In step S506, a plasma P is provided to pass through the hollow pattern 234 of the first mask 222, and the first trench pattern 210 is etched on the first insulating layer 204. The working environment in which this step is completed is in a polymerization chamber (not shown). In addition, after the step S506, the impurities attached to the first trench pattern 210 must be removed (desmear) to facilitate the formation of the first buried wiring layer 206 in the next step S508. The cleaning method is, for example, a plasma device, which is completed by dry etching. Therefore, after the step S506, the first mask 222 can be removed, and then the plasma attached to the first trench pattern 210 can be removed by using plasma in the same plasma device. Furthermore, in the conventional laser mode, after the groove is completed, it takes time and labor to move the substrate to a plasma device or other wet process device capable of performing a cleaning action, which has affected the whole process. The fluency of the process. In contrast, in this embodiment, after the first mask 222 is removed, the cleaning operation can be directly performed by the original plasma device without changing the device and without moving the substrate 202, so that the entire process becomes equivalent in operation. Smooth, convenient and time saving. In addition, in step S506, if the first trench pattern is etched 7 201032274

1 WM4DFA 210 includes a through portion of Fig. 4, i.e., a portion 226 of the first trench pattern 224, and the clearing object of course also includes the through portion. Then, in step S508, the first buried wiring layer 206 is formed on the first trench pattern 210. The manner in which the first buried wiring layer 206 is formed is, for example, an electroless plating method or a chemical deposition method. So far, the substrate structure 200 as shown in FIG. 2 is completed. Further, the manufacturing method of another embodiment can also produce the first trench pattern 224 as shown in FIG. For example, refer to FIG. 7 and refer to FIG. 8A. FIG. 7 is a flow chart showing a manufacturing method of another embodiment, and FIG. 8A is a schematic view showing a second photomask in the manufacturing method of FIG. 7. Steps S502, S504, S506, and S508 have been described in FIG. 5, and will not be described again here. Here, description will be made from step S702. As shown in FIG. 8A, in step S702, a second mask 232 is provided. The second mask 232 has a hollow pattern 238. Then, please refer to Fig. 8B at the same time, which shows a schematic diagram of the plasma provided in Fig. 8A. In step S704, the plasma P is supplied through the hollow pattern 238 of the second mask 232, and a through portion penetrating through the first insulating layer 204 is etched on the first insulating layer 204, and the through portion becomes the first trench. One portion 226 of pattern 224. Thus, the first groove pattern 224 as shown in Fig. 4 is completed. Moreover, in general, during the manufacturing process, the substrate 202 is deformed by the force of the process environment, such as pressure, temperature, or the forces generated by the substrate 202. In another embodiment of the fabrication method, a plurality of first reticles can be used to match the deformed dimensions of the substrate 202. For example, please refer to FIG. 9 , which shows a schematic diagram of the change of the substrate of the present embodiment 201032274. The substrate 202' is the appearance of the deformed substrate 202, and the line size thereon, for example, the size of the line pattern on the metal layer 214 (not shown) is stretched or shortened as the substrate 202' is deformed. There is a deviation from the original size. In this embodiment, a plurality of first masks can be designed. For example, the first masks 236a, 236b, and 236c respectively correspond to the substrate 202, and the plurality of portions of different deformation ratios are respectively corresponding to the substrate 2, respectively. 2, a first portion 202a', a second portion 202b, and a third portion 202c. The dimensions of the first reticles 236a, 236b, and 236c are designed to match the deformation ratio of the substrate 202' so that the subsequently formed first groove pattern accurately corresponds to the deformed substrate 202'. Hereinafter, the correspondence relationship between the first mask 236a and the first portion 202a' of the substrate 202' will be described as an example. Please also refer to the first drawing, which shows a schematic view of the deformation of the first part of the substrate of Fig. 9. The first portion 202a' of the substrate 202' is part of the region 202a prior to deformation. The side length L4 of the first portion 202a' of the deformed substrate 202' is the side length L2 before the deformation, so the deformation ratio is L4/L2; and the side length L3 is the side length ❹ L1 before the deformation, so the deformation ratio It is L3/L1. The first mask 236a of the present embodiment can be designed to match the deformation ratio of the first portion 202a' of the substrate 202'. That is, the hollow pattern on the first mask 236a (the hollow pattern of the first mask 236a is not shown) can be adjusted correspondingly to the deformation ratios L4/L2 and L3/L1, so that the first mask 236a The size of the upper hollow pattern is substantially the same as the size of the deformed first portion 202a' of the substrate 202' to ensure that the subsequently formed first groove pattern can accurately correspond to the deformed substrate 202'. . 9 201032274

i WM4^PA Second Embodiment Referring to Figure i1, a schematic view of a substrate structure in accordance with a second embodiment of the present invention is shown. The second embodiment differs from the first embodiment in that the opposite sides of the substrate structure 300 of the second embodiment have a groove pattern. Other similarities are denoted by the same reference numerals and will not be described again. The features of the substrate structure 300 of the second embodiment will be described in detail below. The substrate 302 of the substrate structure 300 further includes a metal layer 308, such as a copper layer and a second insulating layer 304. The second insulating layer 304 is formed on the second surface 306 of the substrate 302 and the second insulating layer 304 has a second trench pattern 322, and the second surface 306 is opposite to the first surface 2〇8. The second trench pattern 322 is similar to the first trench pattern 224' having a hole 320 penetrating through the second insulating layer 304. In addition, the groove bottom surface 310 of the second groove pattern 322 is also planar. And the second trench pattern 322 exposes a third slot opening 314 on the upper surface 312 of the second insulating strip 304. The width W6 of the slot bottom surface 310 of the second trench pattern 322 is less than or substantially equal to the third slot opening 314. The width W5, the width W6 of the present embodiment is described by taking one third of the width W5 as an example. In addition, the substrate structure 300 of the present embodiment has a circuit structure on both sides, and those skilled in the art should understand that the metal layers 214 and 308 can be electrically connected through a common via (not shown). Thus, the circuit structure on both sides of the substrate structure 300 can be electrically connected through the through hole, the portion 226 of the first trench pattern 224 of the substrate structure 300, and the hole 320 of the second trench pattern 322. In addition, although the number of structural layers on both sides of the substrate structure 300 of the present embodiment is described by taking a single layer as an example, those skilled in the art should understand that the substrate structure 300 of the present embodiment can also be fabricated into a double-sided multilayer. structure. Of course, although a buried wiring layer is not formed on the second trench pattern 322 of Fig. 11. However, it will be apparent to those skilled in the art that a second buried wiring layer (not shown) may also be formed on the second trench pattern 322. Hereinafter, a method of manufacturing the substrate structure 300 of Fig. 11 will be described in detail with reference to Fig. 12 in conjunction with Figs. 13A to 13B. Referring to Fig. 12, φ is a flow chart showing a method of manufacturing a substrate structure in accordance with a second embodiment of the present invention. Steps S502, S504, and S508 have been described in the manufacturing method of the first embodiment, and will not be described again. The following is explained starting from step S802. Please also refer to Fig. 13A, which shows a schematic view of the third photomask in Fig. 12. In step S802, a third mask 316 is provided, and the third mask 316 has a hollow pattern 318. The first mask 222 is disposed adjacent to the first insulating layer 204, and the second mask 232 is disposed adjacent to the second insulating layer 304φ. Then, please refer to Fig. 13B at the same time, which shows a schematic diagram of providing plasma in Fig. 13A. In step S802, the plasma P is simultaneously etched through the hollow pattern 234 of the first mask 222 and the hollow pattern 318 of the third mask 314, and is first etched on the first insulating layer 204 and the second insulating layer 304, respectively. The groove pattern 210 and the second groove pattern 322. The manner in which the holes 320 are formed is similar to the manner in which the portion 226 of the first groove pattern 224 is formed, which has been described in the above-mentioned FIG. 7, and will not be described again. 11 201032274

1 W5145PA Then, after completion of step S508, the substrate structure 300 of Fig. 11 is completed. Of course, it should be understood by those skilled in the art that after the step S508, a second buried wiring layer (not shown) may be formed on the second trench pattern 322. Since the plasma system is distributed throughout the plasma chamber, the first trench pattern 210 and the second trench pattern 322 of the embodiment can be formed at the same time, which is quite time-saving. The substrate structure and the manufacturing method thereof disclosed in the above embodiments of the present invention have at least the following advantages: (1) A trench pattern formed by plasma etching has a groove bottom surface width substantially equal to a width of a groove opening thereof. Thus, the surface area of the trench is increased to contribute to the electrical quality of the subsequently formed buried wiring layer. (2) It is convenient and time-saving to perform the desmear operation directly on the original plasma equipment without removing the equipment and without moving the substrate. (3) The reticle forming the groove pattern may be designed in plurality to correspond to portions of different deformation ratios in the deformed substrate, so that the subsequently formed groove pattern accurately corresponds to the deformed substrate . In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. 12 201032274 L ΎΎ l ~r^/l i~%. [Simple description of the drawing] Fig. 1 is a schematic view showing the structure of a substrate having a buried line. Fig. 2 is a view showing the structure of a substrate in accordance with a first embodiment of the present invention. Fig. 3 is an enlarged schematic view showing a portion A of the first groove pattern in Fig. 2. Figure 4 is a schematic φ diagram of a first trench pattern of another embodiment. Fig. 5 is a flow chart showing a method of manufacturing a substrate structure in accordance with a first embodiment of the present invention. FIG. 6A is a schematic view showing the substrate of the substrate structure of the first embodiment. FIG. 6B is a schematic view showing the first photomask provided in FIG. 6A. Figure 6C is a schematic view showing the plasma provided in Figure 6B. FIG. 7 is a flow chart showing a manufacturing method of another embodiment. Fig. 8A is a schematic view showing a second photomask in the manufacturing method of Fig. 7. FIG. 8B is a schematic view showing the plasma provided in FIG. 8A. FIG. 9 is a schematic view showing the deformation of the substrate of the embodiment. Figure 10 is a schematic view showing the deformation of the first portion of the substrate of Figure 9. Figure 11 is a schematic view showing the structure of a substrate in accordance with a second embodiment of the present invention. Figure 12 is a flow chart showing a method of manufacturing a substrate structure in accordance with a second embodiment of the present invention. FIG. 13A is a schematic view showing the third photomask in FIG. 12. 13 201032274

TW5145PA Figure 13B shows a schematic diagram of the plasma provided in Figure 13A. [Description of main component symbols] 100, 200, 300: substrate structure 102, 202: substrate 104: insulating layer 106: buried wiring layer 108: trenches 110, 212, 310: groove bottom surface _ 202': after deformation Substrate 202a: region 202a': first portion 202b': second portion 202c': third portion 204: first insulating layer 206: first buried wiring layer 208: first surface 10 210, 224 : first trench pattern 214, 308: metal layer 216: first insulating layer upper surface 218: first trench pattern groove sidewall 220: first slot opening 222, 236, 236a, 236b, 236c: first light Cover 226: one portion of the first groove pattern 228: one portion of the first surface 14 201032274 230: second slot opening 232: second mask 234, 238, 318: hollow pattern 304: second insulating layer 306: Second surface 322: second trench pattern 312: second insulating layer upper surface 314: third slot opening • 320: hole

Dl, D2: direction LI, L2, L3, L4: side length P: plasma W b W2, W3, W4, W5, W6: width Z: axial

15

Claims (1)

201032274 TW5145PA VII. Patent Application Range: I A method for manufacturing a substrate structure, comprising: providing a substrate, the substrate comprising a first insulating layer; providing a first mask; providing a plasma through the first light A first trench pattern is etched on the first insulating layer, a bottom surface of the first trench pattern is planar; and a first buried wiring layer is formed on the first trench pattern. 2. The manufacturing method of claim 1, wherein the first trench pattern exposes a first slot opening on a surface of the first insulating layer, and a width of the bottom surface of the first trench pattern It is less than or substantially equal to the width of the first slot opening. 3. The manufacturing method of claim 2, wherein the substrate has a first surface, the first insulating layer is formed on the first surface, and in the etching step, the manufacturing method further comprises: Providing a second reticle; and providing the plasma, through the second reticle, etching a through portion of the first insulating layer through the first insulating layer, the through portion being the first trench pattern a portion of the through portion exposing a portion of the first surface and exposing a second slot opening on a surface of the first insulating layer, the portion of the first surface having a width less than or substantially equal to the second portion The width of the slot opening. 4. The manufacturing method of claim 1, wherein the step of etching the first trench pattern and the step of forming the first buried wiring layer further comprises: 201032274 removing the first reticle; and providing the plasma to desmear impurities attached to the first trench pattern. 5. The manufacturing method of claim 1, wherein the substrate has a first surface and a second surface, the first insulating layer is formed on the first surface, and the second insulating layer a layer is formed on the second surface, the manufacturing method further includes: providing a third mask; φ in the step of providing the plasma, the manufacturing method further comprises: the plasma simultaneously passing through the third mask a second trench pattern is etched on the second insulating layer, and a bottom surface of the second trench pattern is planar; and the manufacturing method further comprises: forming a second buried wiring layer in the second trench On the groove pattern. 6. The manufacturing method of claim 1, wherein in the step of providing the first reticle, the manufacturing method comprises: ❹ providing a plurality of first reticle, the first reticle One of the dimensions corresponds to the deformed size of a portion of the substrate. 7. A substrate structure comprising: a substrate comprising a first insulating layer, the first insulating layer having a first trench pattern, a groove bottom surface of the first trench pattern being a flat surface; and a first An embedded pattern layer is formed in the first trench pattern. 8. The substrate structure of claim 7, wherein the 17 201032274 TW5145FA = map = an upper surface of the insulating layer is exposed - the first groove is equal to the width of the first groove surface is less than or substantially The material 1 has a substrate structure of the j", wherein the first trench layer is formed on the first surface, the first surface is (10) the first insulating layer and the first insulating layer is exposed The surface of the upper surface of the i-edge layer is exposed to a "σ". The width of the portion of the first surface is equal to the width of the opening of the second groove. 乂 Substantially 1. The substrate structure as described in claim 7 is Wherein the material has a first surface and a second surface and a second surface, θ 'the first insulating layer is formed on the first surface, and the second insulating layer is formed on the second surface, The second insulating layer has a second trench, and the bottom surface of the first trench pattern is a flat surface. The substrate structure further includes: a first buried wiring layer formed on the second trench pattern. The substrate structure as described in claim 10, wherein the _ Groove pattern over the second insulating layer exposed on the surface - a third groove opening 'of the width of the groove bottom surface of the second channel pattern of lines is less than or equal to the width of the third opening of the groove 18.