CN101772273B - Base plate structure and manufacture method thereof - Google Patents

Base plate structure and manufacture method thereof Download PDF

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Publication number
CN101772273B
CN101772273B CN200910002948XA CN200910002948A CN101772273B CN 101772273 B CN101772273 B CN 101772273B CN 200910002948X A CN200910002948X A CN 200910002948XA CN 200910002948 A CN200910002948 A CN 200910002948A CN 101772273 B CN101772273 B CN 101772273B
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channel patterns
insulating barrier
channel
photomask
manufacturing approach
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CN101772273A (en
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李志成
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

The invention relates to a base plate structure and a manufacture method thereof. The manufacture method comprises the following steps: firstly, providing a base material which comprises an insulation layer; then, providing an optical mask; next, providing a plasma body; etching a groove pattern on the insulation layer through the optical mask, wherein one groove bottom surface of the groove pattern is a plane; and then, forming an embedded circuit layer on the groove pattern. At the time, the base plate structure is completed. In addition, the technological process can be repeated for increasing the layers of the base plate to obtain a multilayer plate.

Description

Board structure and manufacturing approach thereof
Technical field
Relevant a kind of board structure of the present invention and manufacturing approach thereof, and particularly relevant a kind of board structure and manufacturing approach thereof with flush type circuit (embedded pattern).
Background technology
Please with reference to Fig. 1, it illustrates existing board structure sketch map with flush type circuit.Existing board structure 100 comprises a base material 102, an insulating barrier 104 and a flush type line layer 106, and has a groove 108.Flush type line layer 106 is formed at groove 108.In general, the mode of making groove 108 all is to adopt laser processing mode.
Yet, the machining path of laser beam only along single shaft to, promptly Z-direction is carried out, and can't be simultaneously toward the both sides of Z axle to insulating barrier 104 processing, the phenomenon that therefore causes the groove width of groove 108 to dwindle along with its groove depth.So, the groove 108 that completes, its groove bottom 110 is a cambered surface naturally.And the surface area of groove bottom 110 that is cambered surface is by limited, and the electrical quality that makes the flush type line layer 106 of follow-up formation is not good.
In addition, laser processing once can only be carried out groove processing in the one side of base material 102, after the groove of treating this face completes, could continue to produce groove in another side, and is considerably time-consuming and inconvenient.
Summary of the invention
The purpose of this invention is to provide a kind of board structure and manufacturing approach thereof,, make the groove bottom of groove form the plane with the groove of plasma etching making flush type circuit.So, the area of groove bottom increases, and makes the flush type line layer of follow-up formation have bigger electric connection surface, has promoted the electrical of flush type line layer.
According to the present invention, a kind of board structure is proposed, comprise a base material and one first flush type line layer.Base material comprises one first insulating barrier.First insulating barrier has one first channel patterns, and a groove bottom of first channel patterns is the plane.The first flush type line layer is formed at first channel patterns.
According to the present invention, a kind of manufacturing approach of board structure is proposed.Manufacturing approach may further comprise the steps.One base material is provided, and base material comprises one first insulating barrier.One first photomask is provided.One plasma is provided, sees through first photomask and on first insulating barrier, etch one first channel patterns, a groove bottom of first channel patterns is the plane.Form one first flush type line layer on first channel patterns.
Description of drawings
For letting the foregoing of the present invention can be more obviously understandable, below conjunction with figs. is elaborated to preferred embodiment of the present invention, wherein:
Fig. 1 illustrates existing board structure sketch map with flush type circuit.
Fig. 2 illustrates the sketch map according to the board structure of first embodiment of the invention.
Fig. 3 illustrates the enlarged diagram of the local A of first channel patterns among Fig. 2.
Fig. 4 illustrates another sketch map of implementing first channel patterns of aspect.
Fig. 5 illustrates the manufacturing approach flow chart according to the board structure of first embodiment of the invention.
Fig. 6 A illustrates the base material sketch map of the board structure of first embodiment.
Fig. 6 B illustrates the sketch map that provides first photomask among Fig. 6 A.
Fig. 6 C illustrates the sketch map that provides plasma among Fig. 6 B.
Fig. 7 illustrates the manufacturing approach flow chart of another embodiment.
Fig. 8 A illustrates the sketch map of second photomask in the manufacturing approach of Fig. 7.
Fig. 8 B illustrates the sketch map that provides plasma among Fig. 8 A.
Fig. 9 illustrates the distortion sketch map of the base material of present embodiment.
Figure 10 illustrates first's distortion sketch map of the base material of Fig. 9.
Figure 11 illustrates the sketch map according to the board structure of second embodiment of the invention.
Figure 12 illustrates the manufacturing approach flow chart according to the board structure of second embodiment of the invention.
Figure 13 A illustrates the sketch map of the 3rd photomask among Figure 12.
Figure 13 B illustrates the sketch map that provides plasma among Figure 13 A.
Embodiment
In board structure of the present invention and manufacturing approach thereof, be to utilize plasma etching to produce the groove of flush type circuit, make the groove bottom of groove form the plane.So, the area of groove bottom is to increase, and makes the flush type line layer of follow-up formation have bigger electric connection surface, the electrical quality of having promoted the flush type line layer.Below explain with two preferred embodiments.
First embodiment
Please with reference to Fig. 2, it illustrates the sketch map according to the board structure of first embodiment of the invention.Board structure 200 comprises a base material 202 and one first flush type line layer 206.Base material 202 has a first surface 208 and comprises one first insulating barrier 204 and a metal level 214, for example is the copper layer.First insulating barrier 204 for example is a dielectric layer, is formed on the first surface 208 and with metal level 214 to contact.First insulating barrier 204 has one first channel patterns, 210, the first flush type line layers 206 and is formed at first channel patterns 210.
First channel patterns 210 of present embodiment is to make with the plasma etching mode, and please with reference to Fig. 3, it illustrates the enlarged diagram of the local A of first channel patterns among Fig. 2.In order to clearly demonstrate the characteristic of making first channel patterns with plasma etching, in Fig. 3, omit the first flush type line layer 206 of Fig. 2.Because the plasma process direction does not have only Z-direction, also two edge direction D1 and the D2 toward the Z axle carries out etching to first insulating barrier 204, so the gradient of the groove sidewall 218 of first channel patterns 210 can relatively relax.And, also can make the groove bottom 212 formation planes of first channel patterns 210, so, the cross sectional shape that makes the channel patterns 210 of winning can be trapezoidal, even near rectangle.Compared to the existing groove 108 of Fig. 1, the flute surfaces of first channel patterns 210 of present embodiment is long-pending bigger, helps the electrical quality of the first flush type line layer 206 of follow-up formation.
In addition, first channel patterns 210 exposes one first channel opening 220 in the upper surface 218 of first insulating barrier 204.Suitably controlling under the plasma process parameters, the width W 1 of the groove bottom 212 of first channel patterns 210 less than or equal the width W 2 of first channel opening 220 in fact, the width W 1 of present embodiment is to be that example is explained with 1/3rd of width W 2.Therefore, compared to the existing groove 108 of Fig. 1, it is long-pending that first channel patterns 210 that present embodiment uses plasma to produce has bigger flute surfaces, and the gradient of the groove sidewall 218 of first channel patterns 210 also relaxes.So, first channel patterns 210 makes the first flush type line layer 206 of follow-up formation have preferable electrical quality.On practice, width W 1 is decided by requirement, technology cost and process time to electrical quality with the dimension scale of width W 2, and present embodiment is not in order to limit the ratio of width W 1 and width W 2.
In addition, though first channel patterns 210 of present embodiment does not run through first insulating barrier, yet first channel patterns of another embodiment also can run through first insulating barrier 204.Please with reference to Fig. 4, it illustrates another sketch map of implementing first channel patterns of aspect.The part 226 of one first channel patterns 224 of first insulating barrier 204 runs through first insulating barrier 204 and exposes the some 228 of first surface 208, and exposes one second channel opening 230 in the upper surface 216 of first insulating barrier 204.So, metal level 214 can electrically connect by this part 226 of first channel patterns 224 and the circuit of other stratum.
Because the plasma etching direction is multi-direction, though plasma can't be to metal level 214 etchings when running into metal level 214, but can continue etching first insulating barrier 204 toward Z axle both sides, make that the width of some 228 of first surface 208 is more and more wide.So, the width W 3 of the some 228 of first surface 208 can near or equal the width W 4 of second channel opening 230, this helps the electrical quality of the first flush type line layer that promotes follow-up formation.
Below be with Fig. 5 and Fig. 6 A to Fig. 6 C that arranges in pairs or groups, specify manufacturing approach according to the board structure of first embodiment of the invention.Please with reference to Fig. 5, it illustrates the manufacturing approach flow chart according to the board structure of first embodiment of the invention, and manufacturing approach may further comprise the steps.
At first, please be simultaneously with reference to Fig. 6 A, it illustrates the base material sketch map of the board structure of first embodiment.In step S502, base material 202 is provided, base material 202 has first surface 208 and comprises first insulating barrier 204 and metal level 214.
Then, please be simultaneously with reference to Fig. 6 B, it illustrates the sketch map that provides first photomask among Fig. 6 A.In step S504, provide one first photomask, 222, the first photomasks 222 to have a pierced pattern 234.
Come again, please be simultaneously with reference to Fig. 6 C, it illustrates the sketch map that provides plasma among Fig. 6 B.In step S506, a plasma P is provided, see through the pierced pattern 234 of first photomask 222, and on first insulating barrier 204, etch first channel patterns 210.The operating environment of accomplishing this step is in a plasma chamber (not illustrating).
In addition, after this step S506, need remove (desmear) and be attached to the impurity on first channel patterns 210, in order to the first flush type line layer 206 of the formation among the following step S508.And reset mode for example is a using plasma equipment, accomplishes with the dry ecthing mode.Therefore, can after this step S506, remove first photomask 222, in identical plasma apparatus, use plasma cleaning to be attached to the impurity on first channel patterns 210 then.Say that further in existing laser mode, after groove completed, palpus was time-consuming, moving substrate to can be carried out plasma apparatus or other the wet process equipment of removing action arduously, this has had influence on the fluency of whole technology.Review present embodiment, need not change equipment and not need under the situation of moving substrate 202, can be after removing first photomask 222, directly carry out and remove action with former plasma apparatus, make whole technology in operation, become quite smooth, convenient and save time.
In addition, in step S506, if first channel patterns 210 that etches has comprised the position of running through just like Fig. 4, i.e. the part 226 of first channel patterns 224 is then removed object and has also been comprised this natch and run through the position.
Then, in step S508, form the first flush type line layer 206 on first channel patterns 210.The mode that forms the first flush type line layer 206 for example is to adopt electroless plating (electroless plating) mode or chemical deposition mode.So far, accomplish board structure 200 as shown in Figure 2.
In addition, the manufacturing approach of another embodiment also can produce first channel patterns 224 like Fig. 4.For instance, please with reference to Fig. 7 and simultaneously with reference to Fig. 8 A, Fig. 7 illustrates the manufacturing approach flow chart of another embodiment, and Fig. 8 A illustrates the sketch map of second photomask in the manufacturing approach of Fig. 7.Step S502, S504, S506 and S508 explained in Fig. 5, just repeated no more at this, began explanation from step S702 here.Shown in Fig. 8 A,, one second photomask 232 is provided in step S702.Second photomask 232 has a pierced pattern 238.
Then, please be simultaneously with reference to Fig. 8 B, it illustrates the sketch map that provides plasma among Fig. 8 A.In step S704, plasma P is provided, see through second photomask 232 pierced pattern 238, on first insulating barrier 204, etch one run through first insulating barrier 204 the portion of running through, the portion of running through is a part 226 that becomes first channel patterns 224.So far, accomplish first channel patterns 224 as shown in Figure 4.
In addition, in general, in manufacture process, base material 202 is because of receiving the active force of process environments, and for example being pressure, temperature or corrosion produces distortion to strength that base material 202 produced.Implement in the manufacturing approach of aspect at another, can use a plurality of first photomasks to cooperate size after the distortion of base material 202.For instance, please with reference to Fig. 9, it illustrates the distortion sketch map of the base material of present embodiment.Base material 202 ' is to see outside the base material 202 distortion back, and the wire sizes on it for example is that the size (not illustrating) of the line pattern on the metal level 214 is stretched along with the distortion of base material 202 ' or shortens, and produces deviation with the script size.And present embodiment can design a plurality of first photomasks; For example being a plurality of parts that the first photomask 236a, 236b and 236c correspond to different distortion ratio in the base material 202 ' respectively, for example is the first part 202a ', the second part 202b ' and the 3rd part 202c ' that corresponds to base material 202 ' respectively.The size of these a little first photomask 236a, 236b and 236c is the proportion of deformation design that cooperates base material 202 ', so that first channel patterns of follow-up formation accurately corresponds to the base material 202 ' after the distortion.
Below be that corresponding relation with the 202a ' of first of the first photomask 236a and base material 202 ' is that example is explained.Please be simultaneously with reference to Figure 10, it illustrates first's distortion sketch map of the base material of Fig. 9.The first part 202a ' of base material 202 ' is the part of regional 202a before distortion.The length of side L4 of the first part 202a ' of the base material 202 ' after the distortion is length of side L2 before distortion, so proportion of deformation is L4/L2; And length of side L3 is length of side L1 before distortion, so proportion of deformation is L3/L1.And the first photomask 236a of this enforcement aspect can cooperate the first partly proportion of deformation design of 202a ' of base material 202 '.That is to say; Pierced pattern on the first photomask 236a (pierced pattern of the first photomask 236a does not illustrate) can cooperate above-mentioned proportion of deformation L4/L2 and L3/L1 to do corresponding adjustment; Base material 202 ' after the size that makes the pierced pattern on the first photomask 236a and the distortion first partly the size of 202a ' is identical in fact, can accurately correspond to the base material 202 ' after the distortion with first channel patterns of guaranteeing follow-up formation.
Second embodiment
Please with reference to Figure 11, it illustrates the sketch map according to the board structure of second embodiment of the invention.Second embodiment and the first embodiment difference are that the relative two sides of the board structure 300 of second embodiment all has channel patterns.Other is identical locates to continue to use same numeral, at this and repeat no more.It below is the characteristic that specifies the board structure 300 of second embodiment.
The base material 302 of board structure 300 also comprises a metal level 308, for example is copper layer and one second insulating barrier 304.Second insulating barrier 304 is to be formed on the second surface 306 of base material 302 and second insulating barrier 304 has one second channel patterns 322, and second surface 306 is with respect to first surface 208.
Similar in appearance to first channel patterns, 224, the second channel patterns 322 have one run through second insulating barrier 304 hole 320.In addition, the groove bottom 310 of second channel patterns 322 also is the plane.And; Second channel patterns 322 exposes one the 3rd channel opening 314 in the upper surface 312 of second insulating barrier 304; The width W 6 of the groove bottom 310 of second channel patterns 322 be less than or equal the width W 5 of the 3rd channel opening 314 in fact, the width W 6 of present embodiment is to be that example is explained with 1/3rd of width W 5.
In addition, the two sides of the board structure 300 of present embodiment all has circuit structure, should understand and know this art, can see through a perforation (via) (not illustrating) between the metal level 214 and 308 and electrically conduct.So, the circuit structure on board structure 300 a two sides part 226 and the hole 320 of second channel patterns 322 that can see through first channel patterns 224 of this perforation, board structure 300 electrically connects.
In addition, though the structure level number on the board structure 300 of present embodiment two-sided is to be that example is explained with the individual layer, should understand yet know this art, the board structure 300 of present embodiment also can be made into the double-sided multi-layer structure.
Certainly, though do not form a flush type line layer on second channel patterns 322 of Figure 11.Yet having common knowledge the knowledgeable in this technical field should understand, and one second flush type line layer (not illustrating) also can be formed on second channel patterns 322.
Below be with the Figure 12 and Figure 13 A~Figure 13 B that arranges in pairs or groups, introduce the manufacturing approach of the board structure 300 of Figure 11 in detail.Please with reference to Figure 12, it illustrates the manufacturing approach flow chart according to the board structure of second embodiment of the invention.Step S502, S504 and S508 explained all in the manufacturing approach of first embodiment, just repeated no more at this.Below be to begin explanation by step S802.
Please be simultaneously with reference to Figure 13 A, it illustrates the sketch map of the 3rd photomask among Figure 12.In step S802, provide one the 3rd photomask, 316, the three photomasks 316 to have a pierced pattern 318.First photomask 222 is that contiguous first insulating barrier 204 is provided with, and second photomask 232 is 304 settings of contiguous second insulating barrier.
Then, please be simultaneously with reference to Figure 13 B, it illustrates the sketch map that provides plasma among Figure 13 A.In step S802; Plasma P sees through the pierced pattern 234 of first photomask 222 and the pierced pattern 318 of the 3rd photomask 314 simultaneously, respectively at etching first channel patterns 210 and second channel patterns 322 on first insulating barrier 204 and second insulating barrier 304.
Generation type as for hole 320 is that this explains in above-mentioned Fig. 7, just repeats no more at this similar in appearance to the generation type of the part 226 of first channel patterns 224.
Then, after step S508 accomplishes, accomplish the board structure 300 of Figure 11.
Certainly, having common knowledge the knowledgeable in this technical field should understand, and behind step S508, also can form the second flush type line layer (not illustrating) on second channel patterns on 322.
Because plasma is that to be distributed in whole plasma indoor, uses this characteristic, first channel patterns 210 and second channel patterns 322 of present embodiment can form simultaneously, considerably save time.
Board structure that the above embodiment of the present invention disclosed and manufacturing approach thereof have following advantage at least:
(1) the produced channel patterns of using plasma etching, its groove bottom width can equal the width of its channel opening in fact.So, the surface area of groove increases, and helps the electrical quality of the flush type line layer of follow-up formation.
(2) need not change equipment and not need under the situation of moving substrate, can be after removing photomask, directly carry out and remove (desmear) action, quite facility and saving time with former plasma apparatus.
(3) photomask that forms channel patterns can be designed to a plurality of, and a plurality of parts of different distortion ratio in the base material after the corresponding respectively distortion are so that the channel patterns of follow-up formation accurately corresponds to the base material after the distortion.
In sum, though the present invention with the preferred embodiment exposure as above, yet it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes that are equal to or replacement.Therefore, protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.

Claims (11)

1. the manufacturing approach of a board structure is characterized in that, comprising:
One base material is provided, and this base material comprises one first insulating barrier;
One first photomask is provided;
One plasma is provided, sees through this first photomask and on this first insulating barrier, etch one first channel patterns, a groove bottom of this first channel patterns is the plane; And
Form one first flush type line layer on this first channel patterns.
2. manufacturing approach according to claim 1 is characterized in that, this first channel patterns exposes one first channel opening in the upper surface of this first insulating barrier, and the width of this groove bottom of this first channel patterns is the width that is less than or equal to this first channel opening.
3. manufacturing approach according to claim 1 is characterized in that this base material has a first surface, and this first insulating barrier is formed on this first surface, and in this etching step, this manufacturing approach also comprises:
One second photomask is provided; And
This plasma is provided; See through this second photomask on this first insulating barrier, etch one run through this first insulating barrier the portion of running through; This portion of running through is the part of this first channel patterns; This portion of running through exposes the part of this first surface and exposes one second channel opening in the upper surface of this first insulating barrier, and the width of this part of this first surface is the width that is less than or equal to this second channel opening.
4. manufacturing approach according to claim 1 is characterized in that, between this step of this step that etches this first channel patterns and this first flush type line layer of formation, this manufacturing approach also comprises:
Remove this first photomask; And
This plasma is provided, removes and be attached to the impurity on this first channel patterns.
5. manufacturing approach according to claim 1; It is characterized in that this base material has a relative first surface and a second surface, this first insulating barrier is formed on this first surface; And one second insulating barrier is formed on this second surface, and this manufacturing approach also comprises:
One the 3rd photomask is provided;
In this step that this plasma is provided, this manufacturing approach also comprises:
This plasma sees through the 3rd photomask simultaneously and on this second insulating barrier, etches one second channel patterns, and a groove bottom of this second channel patterns is the plane; And
This manufacturing approach also comprises:
Form one second flush type line layer on this second channel patterns.
6. manufacturing approach according to claim 1 is characterized in that, provides in this step of this first photomask in this, and this manufacturing approach comprises:
A plurality of first photomasks are provided, and the size of one of them of said first photomask is corresponding to the size after the part distortion of this base material.
7. a board structure is characterized in that, comprising:
One base material; Have a first surface and comprise one first insulating barrier; This first insulating barrier is formed on this first surface and has one first channel patterns; One groove bottom of this first channel patterns is the plane, and the part of this first channel patterns runs through this first insulating barrier and exposes the some of this first surface; And
One first flush type line layer is formed at this first channel patterns.
8. board structure according to claim 7 is characterized in that, this first channel patterns exposes one first channel opening in the upper surface of this first insulating barrier, and the width of this groove bottom of this first channel patterns is the width that is less than or equal to this first channel opening.
9. board structure according to claim 8 is characterized in that, this first channel patterns exposes one second channel opening in the upper surface of this first insulating barrier, and the width of this part of this first surface is the width that is less than or equal to this second channel opening.
A process according to claim 7, wherein a substrate, characterized in that the substrate has a second surface and a second insulating layer, the second surface relative to the first surface of the first insulating layer is formed on the the first surface of the second insulating layer is formed on the second surface of the second insulating layer having a second groove pattern, a pattern of the second groove bottom surface is flat, the substrate structure further comprises:
One second flush type line layer is formed at this second channel patterns.
11. board structure according to claim 10 is characterized in that, this second channel patterns exposes one the 3rd channel opening in the upper surface of this second insulating barrier, and the width of this groove bottom of this second channel patterns is the width that is less than or equal to the 3rd channel opening.
CN200910002948XA 2009-01-07 2009-01-07 Base plate structure and manufacture method thereof Active CN101772273B (en)

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CN1433072A (en) * 2002-01-10 2003-07-30 三洋电机株式会社 Wiring structure and its making process, semiconductor device with the wiring structure and its wiring base board
CN1722939A (en) * 2004-07-14 2006-01-18 燿华电子股份有限公司 Manufacturing method of modular circuit board
CN1835660A (en) * 2005-03-15 2006-09-20 杨合卿 Mfg method of precast type multi-layer circuit board

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CN1316872A (en) * 2000-01-28 2001-10-10 三洋电机株式会社 Panel and its making method and installation method for electronic circuit component
CN1433072A (en) * 2002-01-10 2003-07-30 三洋电机株式会社 Wiring structure and its making process, semiconductor device with the wiring structure and its wiring base board
CN1722939A (en) * 2004-07-14 2006-01-18 燿华电子股份有限公司 Manufacturing method of modular circuit board
CN1835660A (en) * 2005-03-15 2006-09-20 杨合卿 Mfg method of precast type multi-layer circuit board

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