TW201024011A - Cutting apparatus and cutting method for manufacturing electronic component - Google Patents

Cutting apparatus and cutting method for manufacturing electronic component Download PDF

Info

Publication number
TW201024011A
TW201024011A TW098144638A TW98144638A TW201024011A TW 201024011 A TW201024011 A TW 201024011A TW 098144638 A TW098144638 A TW 098144638A TW 98144638 A TW98144638 A TW 98144638A TW 201024011 A TW201024011 A TW 201024011A
Authority
TW
Taiwan
Prior art keywords
laser light
substrate
sealing substrate
electronic component
manufacturing
Prior art date
Application number
TW098144638A
Other languages
English (en)
Chinese (zh)
Inventor
Takaaki Hibi
Yasuyuki Kitagawa
Jun Okamoto
Original Assignee
Towa Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Towa Corp filed Critical Towa Corp
Publication of TW201024011A publication Critical patent/TW201024011A/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • B23K26/389Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW098144638A 2008-12-26 2009-12-24 Cutting apparatus and cutting method for manufacturing electronic component TW201024011A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008332054A JP5261168B2 (ja) 2008-12-26 2008-12-26 電子部品製造用の切断装置及び切断方法

Publications (1)

Publication Number Publication Date
TW201024011A true TW201024011A (en) 2010-07-01

Family

ID=42287287

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098144638A TW201024011A (en) 2008-12-26 2009-12-24 Cutting apparatus and cutting method for manufacturing electronic component

Country Status (6)

Country Link
JP (1) JP5261168B2 (fr)
KR (1) KR20110110238A (fr)
CN (1) CN102256739A (fr)
SG (1) SG172318A1 (fr)
TW (1) TW201024011A (fr)
WO (1) WO2010073640A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102368521B (zh) * 2011-10-26 2013-11-20 深圳市瑞丰光电子股份有限公司 发光二极管晶片的切割方法
CN102699536A (zh) * 2012-05-11 2012-10-03 东莞光谷茂和激光技术有限公司 一种金属厚板的激光切割工艺
JP6017373B2 (ja) * 2013-05-21 2016-11-02 Towa株式会社 半導体デバイスの製造方法
JP2016015447A (ja) * 2014-07-03 2016-01-28 パナソニックIpマネジメント株式会社 ウエハの製造方法および装置
JP6460704B2 (ja) * 2014-09-30 2019-01-30 株式会社ディスコ セラミック基板の分割方法
JP6377514B2 (ja) * 2014-12-17 2018-08-22 株式会社ディスコ パッケージ基板の加工方法
WO2017047050A1 (fr) * 2015-09-15 2017-03-23 パナソニックIpマネジメント株式会社 Structure soudée d'élément métallique et procédé de soudage
CN106249955A (zh) * 2016-08-03 2016-12-21 业成科技(成都)有限公司 切割密封压力感测模组方法及其加工而成的压力感测装置
CN108666212B (zh) * 2018-05-02 2023-01-10 南方科技大学 一种led芯片制作方法
US10562338B2 (en) * 2018-06-25 2020-02-18 American Crafts, L.C. Heat pen for use with electronic cutting and/or drawing systems
US11361998B2 (en) 2019-08-30 2022-06-14 Innolux Corporation Method for manufacturing an electronic device
CN112620965A (zh) * 2019-10-08 2021-04-09 台湾丽驰科技股份有限公司 一种双雷射加工机及其加工方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62234686A (ja) * 1986-04-02 1987-10-14 Mitsubishi Electric Corp 加工材料の切断方法
JPS62234685A (ja) * 1986-04-02 1987-10-14 Mitsubishi Electric Corp 加工材料の切断方法
EP1550528A1 (fr) * 2003-12-30 2005-07-06 Advanced Laser Separation International (ALSI) B.V. Procédé, dispositif et réseau de diffraction pour séparer des semiconducteurs formés sur un substrat en altérant ledit réseau de diffraction
FR2893873B1 (fr) * 2005-11-25 2008-12-12 Air Liquide Procede de coupage avec un laser a fibre d'acier inoxydable
KR20070097189A (ko) * 2006-03-28 2007-10-04 삼성전자주식회사 기판 절단 방법 및 이에 사용되는 기판 절단 장치
JP2007279616A (ja) * 2006-04-12 2007-10-25 Sony Corp 駆動基板の製造方法および駆動基板
JP5086690B2 (ja) * 2007-05-18 2012-11-28 日本特殊陶業株式会社 セラミック基板の製造方法

Also Published As

Publication number Publication date
KR20110110238A (ko) 2011-10-06
CN102256739A (zh) 2011-11-23
JP5261168B2 (ja) 2013-08-14
JP2010149165A (ja) 2010-07-08
SG172318A1 (en) 2011-07-28
WO2010073640A1 (fr) 2010-07-01

Similar Documents

Publication Publication Date Title
TW201024011A (en) Cutting apparatus and cutting method for manufacturing electronic component
TWI631665B (zh) 光裝置之加工方法
JP5862733B1 (ja) 半導体片の製造方法
JP6004338B2 (ja) 単結晶基板製造方法および内部改質層形成単結晶部材
TWI447964B (zh) LED wafer manufacturing method
WO2012014716A1 (fr) Procédé de fabrication d'une puce
WO2013115353A1 (fr) Substrat et procédé de traitement de substrat
JP2004031526A (ja) 3族窒化物系化合物半導体素子の製造方法
JP2014041925A (ja) 加工対象物切断方法
JP2006135309A (ja) 半導体素子の製造方法
JPWO2012108054A1 (ja) 単結晶基板の製造方法および内部改質層形成単結晶部材の製造方法
KR20130014522A (ko) 개선된 웨이퍼 싱귤레이션을 위한 방법 및 장치
KR20060105015A (ko) 반도체 기판의 어셈블리 및 그 준비와 다이싱을 위한 방법
JP2007258236A (ja) 半導体基板の分断方法およびその分断方法で作製された半導体チップ
JP2013247147A (ja) 加工対象物切断方法、加工対象物、及び、半導体素子
JP2014019120A (ja) 内部加工層形成単結晶部材の製造方法
JP2005277136A (ja) 基板製造方法および基板製造装置
JP5561666B2 (ja) 基板スライス方法
KR20160108183A (ko) 디바이스 칩의 제조 방법
KR100675001B1 (ko) 웨이퍼 다이싱 방법 및 그 방법을 이용하여 제조된 다이
JP2011009562A (ja) 半導体ウエーハの加工方法
US20150144968A1 (en) Method of stress induced cleaving of semiconductor devices
JP2014041926A (ja) 加工対象物切断方法
JP2006203251A (ja) 半導体素子の製造方法
JP6257979B2 (ja) ウェーハの分割方法