201013803 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種固定/釋放輔助裝置，尤其是一種晶 圓檢測機台用固定/釋放輔助裝置、該檢測機台及方法。 【先前技術】 隨著科技業的進步，例如LED晶圓，厚度已由原本 的200 μπι，逐漸變薄至15〇 μιη以下，遂令晶圓因製造過 程中的熱應力等張力因素，產生約5μηι的不平整翹曲。 而在目前習用測試過程t，多是將待測晶圓置放在承載裝 置的承載面上，將承載裝置通氣連接至一具真空幫浦，使 得承載面上的氣孔處產生負壓，吸附待測晶圓，並藉由上 方之點測裝置，導電接觸該晶圓中的個別晶粒，藉以致能 點免各晶粒並感測其發光。 然而，上述翹曲現象將使得點測裝置無法正確導電接 觸至各晶粒高度，而接觸不良又將使檢測無法正確進行； 為使晶圓平整而解決上述問題，目前業界多以操作人員人 工施壓的方式，迫使晶圓貼緊於承載面；或增大承載裝置 所連接的真空幫浦抽吸力道’強迫晶圓被強力吸取至平貼 承載面。 但無論由人工施壓或強力抽吸時，均可能因為施力不 均勻、施加壓力過快、待測晶圓本身的結構些許瑕疵產生 應力集中現象，待測晶圓因而破片。甚至在關閉真空幫浦 而讓晶圓回復魅曲型態時，晶圓會因為迅速恢復弯曲的形 狀而導致破片。如此，不僅良率隨之下降，成本同步提高； 5 201013803 /月理破片也會耽誤後續作業，使得產出效率明顯降低。 因此，若能自動化施加壓力，使晶圓在不易碎裂情況 下’平坦被吸附固定於承載裝置之承載面上，不僅提升檢 測系統的可靠度，也顯著提高產出效率，更可降低製造成 本’實為最佳的解決方案。 【發明内容】 因此本發明之一目的在提供一種利用中央較厚的挽 性物，在置放晶圓時逐步由中央壓平待測晶圓，使翹曲晶 圓逐步受力而貼平承載面，並受承載面氣孔之吸附而不易 碎裂的晶圓檢測機台用固定/釋放輔助裝置。 本發明另一目的，在提供一種能穩定吸附晶圓使其易 受檢測之晶圓檢測機台用固定/釋放辅助裝置。 本發明之再一目的，在提供一種結構簡單並可充分自 動化而增加測試速度之晶圓檢測機台。 本發明之又一目的，在提供一種減少晶圓損壞機率、 提升產出良率之晶圓檢測機台 本發明之又另-目的，在提供一種可自動化作業、有 效提升檢測效率之晶圓檢測方法。 本發明之又再一目的，在提供一種避免無謂破片、有 效增加產出良率之晶圓檢測方法。 因此本發明揭露一種晶圓檢測機台用目定/釋放輔 助裝置，其中該機台包含—組具有承載裝置之基座及一組 設置於該基座之測試裝置，該承载裝置具有—個供承載該 待測晶圓、並形成有複數氣孔之㈣面，並通氣連接至一 201013803 個排氣幫浦，該固定/釋放辅助裝置包含：—個包括一個 中央部分及一個厚度低於該中央部分的周邊部分之徺性 單元；及一組用以在遠離該承載裝置之—個預備位置，及 一個使該撓性單元該中央部分與該周邊部分被抵壓至該 待測晶圓、並形變至厚度實質相等的迫緊位置間移動該挽 性單元之移動單元。 本發明應用該辅助裝置之晶圓檢測機台，則包含一組 具有承載裝置之基座，該承載裝置具有一個供承載該待測 晶圓、並形成有複數氣孔之承載面，並通氣連接至一個排 氣幫浦；一組設置於該基座之測試裝置；及一組設置於該 基座之固定/釋放輔助裝置，包括一個具有一個中央部分 及一個厚度低於該中央部分的周邊部分之撓性單元；及一 組用以在遠離該承載裝置之一個預備位置，及一個使該撓 性單元該中央部分與制邊部分被抵心該待測晶圓w、並 形變至厚度實質相等的迫緊位置間移動該撓性單元之移 動單元。-組具有承載裝置之基座；'组設置㈣基座之 測試裝置該承載裝置具有—個供承載該待測晶圓並形 成有複數氣孔之承載面’並通氣連接至-個排氣幫浦；及 一組固定/釋放輔助裝置，包括—個具有-個中央部分及 -個厚度低於該中央部分的周邊部分之撓性單元；及一组 :以在遠離該承載裝置之—個預備位置，及—個使該挽性 早7G”亥中央部分與該周邊部分被抵壓至該待測晶圓、並形 變至厚度實f相等的迫緊位置間移動該撓性單it之移動 單元。 7 201013803 應用上述機台進行晶圓檢測之方法，係由一具晶圓檢 測機台檢測該受測晶圓，其中該檢測機台包含一組設有承 載裝置、一組測試裂置及一組固定/釋放輔助裝置之基 座，該承載裝置具有一個供承載該待測晶圓、並形成有複 數氣孔之承載面，並通氣連接至一個排氣幫浦；該固定/ 釋放輔助裝s包括一個具有一個巾央部分及一個厚度低 於該中央部分的周邊部分之撓性單元，及一組用以移動該 • 單元之移動單元，該方法包含下列步驟：日)以該排氣 幫浦對該承載面上複數氣孔施加負塵，並將該受測晶圓置 放於該承載面上，· b)以該移動單元將該撓性單元由遠離該 承載裝置之-個預備位置移動至使該撓性單元該中央部 分被抵壓至該待測晶圓；〇減緩該移動單元及該撓性單元 下壓速度，直到該撓性單元該周邊部分被抵壓至該待測晶 圓’使該撓性單元形變至厚度實質相等的迫緊位置迫使 該待測晶圓平貼於該承載面而受到該等氣孔負遷吸引，保 _ 肖貼附於該承載面’· d)移動該移動單it與該撓性單元至容 許該測試裝置測試該待測晶圓之遠離該待測晶圓位置以 該測試裝置測試該待測晶圓；e)停止該排氣幫浦提供至該 等氣孔之負壓，釋放該待測晶圓。 藉由移動單元的輔助，使撓性單元在下壓形變過程 _先以中央部分逐漸壓迫待測晶圓中央部分，將原本已 ，經部分平貼於承載面的晶圓中央部分磨平，並帶動晶圓之 肖邊部分逐漸接近承載面，減少其間㈣曲量；隨後逐步 下壓，讓整體勉曲待測晶圓能平貼於承载面上，受承載面 8 201013803 上氣孔之吸附’使晶圓變得平整而易被正確點測，不僅能 有效達成自動化檢測作業，更能減少晶圓損壞，同步提高 檢測效率與產出良率，更使作業自動化成為可能。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之較佳實施例的詳細說明中，將可清楚 的呈現。 本發明如圖1及圖2所示，固定/釋放辅助裝置j利 用一個中央部分351明顯較周邊部分353厚的中空球體 35作為施壓之撓性單元，球體35在未作動前，隨_組移 動單元37停止於一個遠離承載裝置43的預備位置，故於 圖6步驟61中，當待測晶圓3置放於承載裝置43之承載 面430上後，將球體35移動至待測晶圓3上方逐漸下壓。 其中，待測晶圓3的翹曲並非輻射狀對稱，但一般因中央 部分351最低，在置放於承載面43〇時即已接近平貼狀 態；且此時承載面43〇上氣孔1〇1已由通氣連接之排氣幫 浦41施加負壓。 因此步驟62如圖1至圖5所示，球體35之中央部分 將優先抵堡至晶圓3的中央，當球體35隨移動單元 缓步下廢’Μ力將逐漸由晶圓3中央部分向外壓迫至稱離 開的圓3中央的中介部位’迫使中介部位向承載面430貼 平而中介部位被塵平，亦使得晶圓3之周邊部分扮翹 曲被逐漸抑制，並隨同朝向承載面43〇下移。 步驟63則如圖！至圖5所示，驅動移動單元π再繼 201013803 續下移，迫使球體35的中央部分351高度縮減至約等於 周邊部分353，因此整個球體35將以均勻出力方式，對 晶圓3整體施壓’使晶圓3由翹曲變成完全平貼於承載面 430 ’並受承載面430上氣孔1〇1之負壓吸引，全面附著 固定於承載面430上，從而在後續過程順利受檢測，以克 服上述晶圓3厚度越來越薄所導致的不平整麵曲現象。當 然，此施壓過程中，移動單元之移動速度亦可較球體35 未接觸晶圓3前更緩慢。 為便於解說起見’在此定義移動單元下壓後，使球體 35中央部分351形變至與球體周邊部分353厚度實質相 等的位置為迫緊位置。另為避免操作人員或機械裝置所攜 帶靜電之瞬間放電（ESD，Electrostatic Discharge)造成過電 壓（EOS, Electrical Overstress)而破壞受測晶圓，亦可選擇 在待測晶圓3上置放一抗靜電件33，以防止ESD破壞， 而達到最佳的防護效果。 其後’於步驟64將移動單元與撓性單元共同移離待 測晶圓，如圖1至圖5所示’由設置於基座1 〇之測試裝 置45進行晶圓檢測’在本例中’測試裝置45包括兩組壓 力導接組件453，及一組光學感測件451。每組壓力導接 組件453分別具有一根金屬探針，供機械式逐一點壓至待 測晶圓中的特定晶粒，供電氣接觸致能該受測晶粒，並由 光學感測件451接收受測晶粒所發之光而進行研判。當 然’如熟悉此技術領域人士所能輕易理解，依照目前技 術，亦有部分晶粒的共同接地是位於晶圓背面，而受測面 201013803 僅存有單一電極，對於此種結構之待測晶圓，則可選擇承 載面為金屬材質的承載裝置，以承載面作為接地之用，使 上方之金屬探針及壓力導接組件則僅需一組。 至步驟65，當檢測完成後，重新如圖4所示將移動 單元（如圓1所示）及球體35移動至迫緊待測晶圓3的迫緊 位置，使知測畢之晶圓3係被球想3 5施力麼平。最後於 步驟66中，一方面停止排氣幫浦41繼續提供負壓至氣孔 101 ’使晶圓之彈性回復力完全由撓性單元抵消。另方面 緩緩地將移動單元及球體35上移，逐步移動至承載裝置 43的預備位置，使得待測晶圓3是被限制成漸次由周邊 至中央彈性回復為原始輕曲狀態，從而避免晶圓3在快速 釋放的步驟中，因迅速回彈而損壞的風險。當然，若確認 該晶圓之結構強度足以承受急速回彈而不致破片，此部分 之步驟亦可省略而無礙於本案之實施。 當然，如熟悉本技術領域者所能輕易理解，撓性單元 並非侷限於中空球體，如圖7本案第二實施例所示，亦可 利用如海棉35,等實心撓性件，使其周邊部分353,的厚度 少於中央部分351，並在最後壓平晶圓過程時，使中央部 分351’之厚度可實質等於周邊部分353，，即可符合本案所 需’對晶圓表面施壓以進行檢測作業。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明書内容所作之簡單的等效變化與修飾，皆 應仍屬本發明專利涵篕之範圍内。 11 201013803 【圖式簡單說明】 圖1是本發明第一實施例之側視示意圖； 圖2〜4是本發明第一實施例球體下壓至平貼於晶圓作動 情形之侧視示意圖； 圖5是本發明第一實施例之測試裝置示意圖； 圖6是本發明第一實施例之檢測方法流程示意圖；及 圖7是本發明第二實施例之側視示意圖。 【主要元件符號說明】 1…固定/釋放輔助裝置 3曰 10…基座 3 5...球體 3 3…抗靜電件 35’…海棉 37…移動單元 43.. .承載裝置 101.. .氣孔 353、353’…周邊部分 451…光學感測件 41…排氣幫浦 45…測試裝置 351、351’…中央部分 430.··承載面 453…壓力導接組件 12[Technical Field] The present invention relates to a fixing/release assisting device, and more particularly to a fixing/release assisting device for a crystal detecting machine, the detecting machine and the method. [Prior Art] With the advancement of the technology industry, such as LED wafers, the thickness has been gradually reduced from the original 200 μπι to 15 μmηη, which causes the wafer to be produced by the tension factors such as thermal stress during the manufacturing process. 5μηι uneven warping. In the current test process t, the wafer to be tested is placed on the bearing surface of the carrying device, and the carrying device is ventilated to a vacuum pump, so that a negative pressure is generated at the air hole on the bearing surface, and the adsorption is performed. The wafer is measured and electrically contacted with individual dies in the wafer by means of an over-spot device, whereby the dies are sensed and their luminescence is sensed. However, the above warping phenomenon will make the spotting device unable to properly contact the height of each die, and the poor contact will make the detection impossible. In order to solve the above problems in order to flatten the wafer, the industry currently employs artificially. The pressing method forces the wafer to adhere to the bearing surface; or increases the vacuum pump suction force connected to the carrier device to force the wafer to be strongly drawn to the flat bearing surface. However, whether by manual pressure or strong suction, the stress may be concentrated due to uneven application of force, excessive application of pressure, and a slight structure of the wafer itself to be tested, and the wafer to be tested may be fragmented. Even when the vacuum pump is turned off and the wafer is returned to the sacred shape, the wafer will be fragmented due to the rapid recovery of the curved shape. In this way, not only the yield will decrease, but also the cost will increase simultaneously. 5 201013803 / The monthly fragment will also delay the follow-up work, resulting in a significant reduction in output efficiency. Therefore, if the pressure can be automatically applied, the wafer can be flatly adsorbed and fixed on the bearing surface of the carrier without being easily broken, which not only improves the reliability of the detection system, but also significantly improves the output efficiency and reduces the manufacturing cost. 'The best solution. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a thicker centrally-loaded material that gradually flattens the wafer to be tested from the center during placement of the wafer, thereby gradually stressing the warped wafer and flattening the load. A fixing/release aid for a wafer inspection machine that is surface-mounted and is not easily broken by the adsorption of the bearing surface. Another object of the present invention is to provide a fixing/release assisting device for a wafer inspection machine which can stably adsorb a wafer and make it susceptible to detection. Still another object of the present invention is to provide a wafer inspection machine which is simple in structure and sufficiently automated to increase the test speed. Another object of the present invention is to provide a wafer inspection machine for reducing wafer damage probability and improving yield yield. Another object of the present invention is to provide a wafer inspection method capable of automatically operating and effectively improving detection efficiency. . Still another object of the present invention is to provide a wafer inspection method that avoids unnecessary fragmentation and effectively increases yield yield. Therefore, the present invention discloses a sighting/release assisting device for a wafer inspection machine, wherein the machine includes a base having a carrying device and a set of testing devices disposed on the base, the carrying device having one Carrying the wafer to be tested and forming a (four) plane of a plurality of air holes, and ventilating to a 201013803 exhaust pump, the fixing/release auxiliary device comprising: a unit including a central portion and a thickness lower than the central portion a peripheral unit of the peripheral portion; and a set of positions for remoteness from the carrying device, and a portion of the flexible unit that is pressed against the wafer to be tested and deformed Moving the mobile unit of the tropic unit between the forced positions of substantially equal thickness. The wafer inspection machine for applying the auxiliary device of the present invention comprises a plurality of pedestals having a carrier device, the carrier device having a bearing surface for carrying the wafer to be tested and forming a plurality of air holes, and ventilating to An exhaust pump; a set of test devices disposed on the base; and a set of fixing/release aids disposed on the base, including a central portion and a peripheral portion having a thickness lower than the central portion a flexible unit; and a set for being at a preparatory position away from the carrying device, and a portion of the flexible unit that is centered against the wafer to be tested and deformed to substantially equal thickness Moving the mobile unit of the flexure unit between the positions. - a group having a base of the carrying device; 'group setting (four) base test device having a load bearing surface for carrying the wafer to be tested and forming a plurality of air holes and venting to an exhaust pump And a set of fixing/release aids comprising: a flexible unit having a central portion and a peripheral portion having a thickness lower than the central portion; and a set: at a preparatory position away from the carrying device And moving the flexible unit between the central portion of the 7G and the peripheral portion and the peripheral portion is pressed against the wafer to be tested and deformed to a thickness equal to the thickness f. 7 201013803 The method for applying the above-mentioned machine for wafer inspection is to detect the tested wafer by a wafer inspection machine, wherein the inspection machine comprises a set of carrying devices, a set of test splits and a set of a base of the fixing/releasing auxiliary device, the carrying device having a bearing surface for carrying the wafer to be tested and forming a plurality of air holes, and ventilatingly connected to an exhaust pump; the fixing/release auxiliary device s includes a Have a a central portion and a flexible unit having a thickness lower than a peripheral portion of the central portion, and a set of moving units for moving the unit, the method comprising the steps of: displacing the exhaust surface on the bearing surface Applying negative dust to the plurality of air holes, and placing the test wafer on the bearing surface, b) moving the flexible unit from a preparatory position away from the carrying device to the flexible unit by the moving unit The central portion is pressed against the wafer to be tested; 〇 slowing the pressing speed of the moving unit and the flexible unit until the peripheral portion of the flexible unit is pressed against the wafer to be tested 'to make the flexible unit Forming the pressing position to be substantially equal in thickness, forcing the wafer to be tested to be flatly attached to the bearing surface and being attracted by the pores, and attaching the bearing to the bearing surface '· d) to move the moving sheet and the The flexible unit is configured to allow the testing device to test the wafer to be tested away from the position of the wafer to be tested to test the wafer to be tested by the testing device; e) stopping the negative pressure provided by the exhaust pump to the pores, Release the wafer to be tested. By moving the unit Auxiliary, the flexible unit is deformed in the process of pressing down. First, the central part of the wafer is gradually pressed against the central part of the wafer to be tested, and the central portion of the wafer which has been partially flattened on the carrying surface is flattened and the side of the wafer is driven. Part gradually approaching the bearing surface, reducing the amount of curvature in the middle (four); then gradually pressing down, so that the overall distortion of the wafer to be tested can be flat on the bearing surface, and the adsorption of the air holes on the bearing surface 8 201013803 ' flatten the wafer It is easy to be correctly spotted, which not only can effectively achieve automatic inspection operations, but also can reduce wafer damage, improve detection efficiency and output yield simultaneously, and make operation automation possible. [Embodiment] The foregoing and other technologies related to the present invention The content, features, and effects will be apparent from the following detailed description of the preferred embodiments of the drawings. The present invention is shown in FIGS. 1 and 2, and the fixing/release assisting device j utilizes a central portion 351. The hollow sphere 35, which is obviously thicker than the peripheral portion 353, serves as a flexible unit for pressing, and the sphere 35 stops at a distance from the carrying device 43 before the moving unit 37 is unactuated. Ready position, so in step 61 in FIG. 6, when the wafer 430 placed on the supporting means 3 test bearing surface 43, the sphere 35 is moved upward to the wafer 3 measured under the pressure gradually. The warpage of the wafer 3 to be tested is not radial symmetry, but generally because the central portion 351 is the lowest, it is close to the flat state when placed on the bearing surface 43 ;; and at this time, the bearing surface 43 is vented. 1 A negative pressure has been applied by the vented connection exhaust pump 41. Therefore, as shown in FIG. 1 to FIG. 5, the central portion of the sphere 35 will preferentially reach the center of the wafer 3, and when the sphere 35 is slowly slid with the moving unit, the force will gradually move from the central portion of the wafer 3. The external pressure is pressed to the intermediate portion of the center of the circle 3 which is said to be left. The intermediate portion is forced to be flattened to the bearing surface 430 and the intermediate portion is dusted, so that the warpage of the peripheral portion of the wafer 3 is gradually suppressed, and is accompanied by the bearing surface 43. Move down. Step 63 is as shown! As shown in FIG. 5, the driving mobile unit π continues to move down the 201013803, forcing the central portion 351 of the ball 35 to be reduced to approximately equal to the peripheral portion 353, so that the entire ball 35 will apply pressure to the wafer 3 in a uniform manner. 'The wafer 3 is changed from warpage to completely flat to the bearing surface 430' and is attracted by the negative pressure of the air hole 1〇1 on the bearing surface 430, and is fully attached and fixed on the bearing surface 430, so that it can be smoothly detected in the subsequent process, Overcoming the uneven curvature phenomenon caused by the thinning of the thickness of the wafer 3 described above. Of course, during this pressing process, the moving speed of the moving unit can also be slower than before the ball 35 is not in contact with the wafer 3. For ease of explanation, after defining the moving unit to be depressed, the central portion 351 of the sphere 35 is deformed to a position substantially equal to the thickness of the peripheral portion 353 of the sphere to be a pressing position. In addition, in order to avoid the overvoltage (EOS, Electrical Overstress) caused by the electrostatic discharge (ESD, Electrostatic Discharge) of the operator or the mechanical device, the test wafer is destroyed, and the primary antibody may be placed on the wafer 3 to be tested. The electrostatic member 33 prevents ESD damage and achieves the best protection. Thereafter, in step 64, the mobile unit and the flexible unit are moved together from the wafer to be tested, as shown in FIGS. 1 to 5, 'wafer detection is performed by the test device 45 disposed on the susceptor 1'. In this example, The test device 45 includes two sets of pressure guiding assemblies 453 and a set of optical sensing members 451. Each set of pressure guiding components 453 respectively has a metal probe for mechanically pressing one by one to a specific die in the wafer to be tested, and the power supply gas contacts the enabled die, and is controlled by the optical sensing component 451. The light emitted by the measured crystal is received and judged. Of course, as can be easily understood by those skilled in the art, according to the current technology, a common ground of some of the crystal grains is located on the back side of the wafer, and the measured surface 201013803 has only a single electrode, and the crystal to be measured for such a structure For the round shape, the bearing surface with the metal bearing material can be selected, and the bearing surface is used as the grounding material, so that only one set of the metal probe and the pressure guiding component above is required. Go to step 65, when the detection is completed, move the mobile unit (as shown by circle 1) and the sphere 35 to the pressing position of the wafer 3 to be tested as shown in FIG. 4, so that the wafer 3 is completed. I was forced by the ball to force 3 5 to apply. Finally, in step 66, on the one hand, the exhaust pump 41 is stopped to continue to provide a negative pressure to the air holes 101' so that the elastic restoring force of the wafer is completely offset by the flexible unit. On the other hand, the moving unit and the ball 35 are gradually moved up and gradually moved to the preparatory position of the carrying device 43 so that the wafer 3 to be tested is restricted to gradually return from the periphery to the center to return to the original soft state, thereby avoiding the crystal. The risk of damage to the circle 3 in the rapid release step due to rapid rebound. Of course, if it is confirmed that the structural strength of the wafer is sufficient to withstand rapid rebound without fragmentation, the steps of this portion can be omitted without hindering the implementation of the present case. Of course, as can be easily understood by those skilled in the art, the flexible unit is not limited to the hollow sphere. As shown in the second embodiment of the present invention, a solid flexure such as sponge 35 may be used to make the periphery thereof. The portion 353 has a thickness less than the central portion 351, and when the wafer is finally flattened, the thickness of the central portion 351' can be substantially equal to the peripheral portion 353, which can meet the requirements of the present invention. Carry out inspection work. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All should remain within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side elevational view of a first embodiment of the present invention; FIGS. 2 to 4 are side views of a first embodiment of the present invention in which a sphere is pressed down to a wafer for actuation; 5 is a schematic diagram of a test apparatus according to a first embodiment of the present invention; FIG. 6 is a schematic flow chart of a detection method according to a first embodiment of the present invention; and FIG. 7 is a side view of a second embodiment of the present invention. [Main component symbol description] 1...Fix/release auxiliary device 3曰10...Base 3 5...Sphere 3 3...Antistatic member 35'...Sponge 37...Mobile unit 43.. Carrying device 101.. Air holes 353, 353'... peripheral portion 451... optical sensing member 41... exhaust pump 45... test device 351, 351'... central portion 430. · bearing surface 453... pressure guiding assembly 12