TWI665757B - Semiconductor manufacturing device and method for manufacturing semiconductor device - Google Patents

Semiconductor manufacturing device and method for manufacturing semiconductor device Download PDF

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Publication number
TWI665757B
TWI665757B TW106121450A TW106121450A TWI665757B TW I665757 B TWI665757 B TW I665757B TW 106121450 A TW106121450 A TW 106121450A TW 106121450 A TW106121450 A TW 106121450A TW I665757 B TWI665757 B TW I665757B
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Taiwan
Prior art keywords
wafer
outer peripheral
collet
peripheral portion
push
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TW106121450A
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Chinese (zh)
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TW201812981A (en
Inventor
名久井勇輝
Yuki Nakui
岡本直樹
Naoki Okamoto
齊藤明
Akira Saito
田中深志
Fukashi Tanaka
橫森剛
Tsuyoshi Yokomori
二宮勇
Isamu Ninomiya
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日商捷進科技有限公司
Fasford Technology Co., Ltd.
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Publication of TW201812981A publication Critical patent/TW201812981A/en
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Publication of TWI665757B publication Critical patent/TWI665757B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

Abstract

係在用上推單元將晶片(die)上推時,有晶片變形並且撓曲直到筒夾的吸附面之下發生洩漏之情形。 When the die is pushed up by the push-up unit, the wafer may be deformed and flexed until leakage occurs under the suction surface of the collet.

係一種半導體製造裝置,其特徵係具備吸附晶片之筒夾部;前述筒夾部具備:有第2抽吸孔之管狀部、保持有第1抽吸孔的吸附部的保持部及位置於前述管狀部的外側之外周部,於前述保持部及前述管狀部與外周部之間所構成之第3抽吸孔,與藉由前述晶片的周邊部朝下方向撓曲使前述第3抽吸孔發生洩漏且藉由其內壓增加而將前述外周部壓下並抵接在前述晶片的周邊部,藉由前述洩漏的發生消除且其內壓減少而將前述外周部拉起並將前述晶片的周邊部拉起之手段。 It is a semiconductor manufacturing device characterized by including a collet portion for adsorbing a wafer; the collet portion includes a tubular portion having a second suction hole, and a holding portion and a position of the suction portion holding the first suction hole. A third suction hole formed on the outer peripheral portion of the tubular portion between the holding portion and the tubular portion and the outer peripheral portion, and the third suction hole is bent by the peripheral portion of the wafer being bent downward. A leak occurs, and the outer peripheral portion is pressed down and abuts on the peripheral portion of the wafer by an increase in the internal pressure. The occurrence of the leak is eliminated and the internal pressure is reduced, the outer peripheral portion is pulled up and the Means to pull up the peripheral part.

Description

半導體製造裝置及半導體裝置之製造方法    Semiconductor manufacturing device and method for manufacturing semiconductor device   

本揭示係有關半導體製造裝置,可以適用於例如具備筒夾之晶片接合器(die bonder)。 The present disclosure relates to a semiconductor manufacturing apparatus and can be applied to, for example, a die bonder including a collet.

一般而言,在將被稱作晶片的半導體晶片,例如,搭載在配線基板或導線架等(以下,總稱為基板)的表面之晶片接合器,一般上,係反覆進行使用筒夾等吸附噴嘴將晶片搬送到基板上,藉由賦予壓制力(pressing force),同時加熱接合材,而進行接合之動作(作業)。 Generally, a semiconductor wafer referred to as a wafer, for example, a wafer bonder mounted on a surface of a wiring board, a lead frame, or the like (hereinafter, collectively referred to as a substrate) generally uses suction nozzles such as collets repeatedly. The wafer is transferred to a substrate, and the bonding material is heated while applying a pressing force, thereby performing a bonding operation (operation).

在利用晶片接合器等半導體製造裝置之晶片接合步驟之中,有將自半導體晶圓(以下,簡稱晶圓)被分割之晶片剝離之剝離步驟。在剝離步驟,係從切割膠帶背面利用上推單元將晶片上推,而自被保持在晶片供給部的切割膠帶、1個個剝離,使用筒夾等吸附噴嘴搬送到基板上。 Among the wafer bonding steps using a semiconductor manufacturing apparatus such as a wafer bonder, there is a peeling step of peeling off a wafer that has been divided from a semiconductor wafer (hereinafter, simply referred to as a wafer). In the peeling step, the wafer is pushed up by the push-up unit from the back of the dicing tape, and each of the dicing tape held in the wafer supply section is peeled off and transferred to the substrate using an adsorption nozzle such as a collet.

[先前技術文獻]     [Prior technical literature]     [專利文獻]     [Patent Literature]    

[專利文獻1]日本特開2015-76410號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2015-76410

在用上推單元將晶片(die)上推時,有晶片變形直到筒夾的吸附面之下撓曲、發生洩漏之情形。 When the die is pushed up by the push-up unit, the wafer may be deformed until it is bent under the suction surface of the collet, and leakage may occur.

本發明之課題在於提供即使晶片變形,也不會因洩漏發生影響真空吸附力喪失之半導體製造裝置。 An object of the present invention is to provide a semiconductor manufacturing apparatus that does not affect the loss of vacuum suction force due to leakage even if the wafer is deformed.

本發明之其他的課題與新穎的特徵,可以由本說明書的記載以及附圖而詳細得知。 Other problems and novel features of the present invention can be understood in detail from the description of the present specification and the drawings.

於本說明書揭示中,具有代表性者的概要內容簡單說明如下。 In the disclosure of this specification, a summary of a representative is briefly explained as follows.

亦即,半導體製造裝置,係依照所拾取的晶片(die)剖面形狀,具備外周部會自動上下之筒夾。 That is, the semiconductor manufacturing apparatus is provided with a collet that automatically moves up and down in accordance with the cross-sectional shape of the picked up die.

根據上述半導體製造裝置,可以減少洩漏。 According to the semiconductor manufacturing apparatus described above, leakage can be reduced.

1‧‧‧晶片(die)供給部 1‧‧‧die supply department

11‧‧‧晶圓 11‧‧‧ wafer

13‧‧‧上推單元 13‧‧‧ Push-up unit

16‧‧‧切割膠帶 16‧‧‧ Cutting Tape

2‧‧‧拾取部 2‧‧‧Pick up department

21‧‧‧拾取頭 21‧‧‧Pickup head

22‧‧‧筒夾部 22‧‧‧ Collet Department

23‧‧‧吸附部 23‧‧‧ Adsorption Department

24‧‧‧中央部 24‧‧‧ Central

26‧‧‧真空抽吸孔 26‧‧‧Vacuum suction hole

27‧‧‧真空抽吸溝 27‧‧‧Vacuum suction groove

28‧‧‧外周部 28‧‧‧ Peripheral Department

29‧‧‧伸縮管部 29‧‧‧ Telescopic Tube Department

3‧‧‧中間載物台部 3‧‧‧ Intermediate Stage Department

31‧‧‧中間載物台 31‧‧‧ intermediate stage

4‧‧‧接合部 4‧‧‧ Junction

41‧‧‧接合頭 41‧‧‧Joint head

7‧‧‧控制部 7‧‧‧Control Department

10‧‧‧晶片接合器 10‧‧‧ Wafer Splicer

D‧‧‧晶片 D‧‧‧Chip

P‧‧‧基板 P‧‧‧ substrate

圖1係從上俯視關於實施例之晶片接合器(die bonder)之概念圖。 FIG. 1 is a conceptual view of a die bonder of the embodiment as viewed from above.

圖2係圖1在從箭頭A方向來看時,拾取頭及接合頭的 動作之說明圖。 Fig. 2 is an explanatory diagram of the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1.

圖3係圖示圖1的晶片供給部之外觀斜視圖。 FIG. 3 is a perspective view illustrating an appearance of the wafer supply unit in FIG. 1.

圖4係顯示圖1的晶片供給部之主要部分之概略剖面圖。 FIG. 4 is a schematic cross-sectional view showing a main part of the wafer supply section of FIG. 1. FIG.

圖5係圖4之上推單元之俯視圖。 FIG. 5 is a top view of the push-up unit of FIG. 4.

圖6係關於比較例之筒夾部與上推單元之剖面圖。 6 is a cross-sectional view of a collet portion and a push-up unit in a comparative example.

圖7係關於比較例之筒夾部之底視圖。 Fig. 7 is a bottom view of a collet portion of a comparative example.

圖8係關於實施例之筒夾部之說明圖。 Fig. 8 is an explanatory view of a collet portion of the embodiment.

圖9A係關於實施例之筒夾部與上推單元之剖面圖。 FIG. 9A is a cross-sectional view of the collet portion and the push-up unit of the embodiment.

圖9B係關於實施例之筒夾部與上推單元之剖面圖。 9B is a cross-sectional view of the collet portion and the push-up unit in the embodiment.

圖9C係關於實施例之筒夾部與上推單元之剖面圖。 9C is a cross-sectional view of the collet portion and the push-up unit in the embodiment.

圖9D係關於實施例之筒夾部與上推單元之剖面圖。 9D is a cross-sectional view of the collet portion and the push-up unit of the embodiment.

圖9E係關於實施例之筒夾部與上推單元之剖面圖。 9E is a cross-sectional view of the collet portion and the push-up unit of the embodiment.

圖10係供說明關於實施例之晶片接合器的拾取動作用之流程圖。 FIG. 10 is a flowchart for explaining a pickup operation of the wafer bonder according to the embodiment.

圖11係供說明關於實施例之半導體裝置之製造方法用之流程圖。 FIG. 11 is a flowchart for explaining a method of manufacturing a semiconductor device according to the embodiment.

圖12係關於變形例1之筒夾部之說明圖。 FIG. 12 is an explanatory diagram of a collet portion according to Modification 1. FIG.

圖13A係關於變形例1之筒夾部與上推單元之剖面圖。 13A is a cross-sectional view of a collet portion and a push-up unit according to Modification 1. FIG.

圖13B係關於變形例1之筒夾部與上推單元之剖面圖。 FIG. 13B is a cross-sectional view of a collet portion and a push-up unit according to Modification 1. FIG.

圖13C係關於變形例1之筒夾部與上推單元之剖面圖。 FIG. 13C is a cross-sectional view of a collet portion and a push-up unit according to Modification 1. FIG.

圖13D係關於變形例1之筒夾部與上推單元之剖面圖。 13D is a cross-sectional view of a collet portion and a push-up unit according to Modification 1. FIG.

圖13E係關於變形例1之筒夾部與上推單元之剖面圖。 FIG. 13E is a cross-sectional view of a collet portion and a push-up unit according to Modification 1. FIG.

圖14係關於變形例2之筒夾部之說明圖。 FIG. 14 is an explanatory view of a collet portion according to Modification 2. FIG.

圖15A係關於變形例2之筒夾部與上推單元之剖面圖。 15A is a cross-sectional view of a collet portion and a push-up unit according to Modification 2. FIG.

圖15B係關於變形例2之筒夾部與上推單元之剖面圖。 15B is a cross-sectional view of a collet portion and a push-up unit according to Modification 2. FIG.

圖15C係關於變形例2之筒夾部與上推單元之剖面圖。 FIG. 15C is a cross-sectional view of a collet portion and a push-up unit according to Modification 2. FIG.

圖15D係關於變形例2之筒夾部與上推單元之剖面圖。 15D is a cross-sectional view of a collet portion and a push-up unit according to Modification 2. FIG.

圖15E係關於變形例2之筒夾部與上推單元之剖面圖。 15E is a cross-sectional view of a collet portion and a push-up unit according to Modification 2. FIG.

圖16係關於變形例3之筒夾部之說明圖。 FIG. 16 is an explanatory diagram of a collet portion according to Modification 3. FIG.

圖17A係關於變形例3之筒夾部與上推單元之剖面圖。 17A is a cross-sectional view of a collet portion and a push-up unit according to Modification 3. FIG.

圖17B係關於變形例3之筒夾部與上推單元之剖面圖。 FIG. 17B is a cross-sectional view of a collet portion and a push-up unit according to Modification 3. FIG.

圖17C係關於變形例3之筒夾部與上推單元之剖面圖。 FIG. 17C is a cross-sectional view of a collet portion and a push-up unit according to Modification 3. FIG.

圖17D係關於變形例3之筒夾部與上推單元之剖面圖。 FIG. 17D is a cross-sectional view of a collet portion and a push-up unit according to Modification 3. FIG.

圖17E係關於變形例3之筒夾部與上推單元之剖面圖。 17E is a cross-sectional view of a collet portion and a push-up unit according to Modification 3. FIG.

圖18係關於變形例4之筒夾部之說明圖。 FIG. 18 is an explanatory diagram of a collet portion according to Modification 4. FIG.

圖19係供說明關於實施例之晶片接合器的拾取動作之變形例用之流程圖。 FIG. 19 is a flowchart for explaining a modification of the pickup operation of the wafer bonder of the embodiment.

圖20A係關於實施例之筒夾部與上推單元之剖面圖。 20A is a cross-sectional view of a collet portion and a push-up unit according to the embodiment.

圖20B係關於實施例之筒夾部與上推單元之剖面圖。 20B is a cross-sectional view of the collet portion and the push-up unit in the embodiment.

以下,使用圖式說明實施例及變形例。但是,在以下的說明,在相同構成要素附上相同圖號且、省略反覆說明。又,圖式可使說明更為明確,與實際的態樣相比,各部分的寬幅、厚度、形狀等亦有模式表示的場合,其終究只是一例示而已,並非用於限定本發明之解釋。 Hereinafter, examples and modifications will be described using drawings. However, in the following description, the same components are assigned the same drawing numbers, and repeated descriptions are omitted. In addition, the drawings can make the explanation more clear. When compared with the actual appearance, the width, thickness, and shape of each part are also shown in a pattern, which is only an example after all, and is not intended to limit the scope of the present invention. Explanation.

[實施例]     [Example]    

圖1係顯示關於實施例之晶片接合器(die bonder)的概略之俯視圖。圖2係圖1在從箭頭A方向來看時,拾取頭及接合頭的動作之說明圖。 FIG. 1 is a schematic plan view showing a die bonder of the embodiment. FIG. 2 is an explanatory diagram of the actions of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 1.

晶片接合器10,大致區別來說,係具有晶片供給部1、拾取部2、中間載物台部3、接合部4、搬送部5、基板供給部6、基板搬出部7、與監視、控制各部動作之控制部8。 The wafer bonder 10 basically includes a wafer supply unit 1, a pick-up unit 2, an intermediate stage portion 3, a bonding unit 4, a transfer unit 5, a substrate supply unit 6, a substrate carry-out unit 7, and monitoring and control. Control unit 8 for each part operation.

首先,晶片供給部1係對基板P供給所組裝之晶片D。晶片供給部1,係具有保持晶圓11之晶圓保持台12、與從晶圓11將晶片D上推之以虛線顯示之上推單元13。晶片供給部1係利用未圖示的驅動手段在XY方向移動,使拾取的晶片D在上推單元13的位置移動。 First, the wafer supply unit 1 supplies the assembled wafer D to the substrate P. The wafer supply unit 1 includes a wafer holding table 12 that holds the wafer 11 and a push-up unit 13 that pushes the wafer D up from the wafer 11 and is shown in broken lines. The wafer supply unit 1 is moved in the XY direction by a driving means (not shown) to move the picked-up wafer D at the position of the push-up unit 13.

拾取部2,係具有拾取晶片D之拾取頭21,使拾取頭21在Y方向移動之拾取頭的Y驅動部23,與使筒夾部22昇降、旋轉及X方向移動之未圖示之各驅動部。拾取頭21係具有將被上推的晶片D吸附保持在先端之筒夾部22(也參照圖2),從晶片供給部1將晶片D拾取、載置在中間載物台31。拾取頭21,係具有使筒夾部22昇降、旋轉及X方向移動之未圖示之各驅動部。 The pick-up section 2 includes a pick-up head 21 for picking up a wafer D, a Y-driving section 23 for a pick-up head that moves the pick-up head 21 in the Y direction, and an unillustrated one that moves the collet section 22 up, down, and moves the X-direction. Drive section. The pick-up head 21 includes a collet section 22 (see also FIG. 2) that sucks and holds the pushed-up wafer D to the front end, and picks up and places the wafer D from the wafer supply section 1 on the intermediate stage 31. The pickup head 21 includes drive units (not shown) for raising, lowering, rotating, and moving the collet portion 22 in the X direction.

中間載物台部3,係具有暫時載置晶片D之中間載物台31、與供辨識中間載物台31上的晶片D用之載物台辨識攝影機32。 The intermediate stage section 3 includes an intermediate stage 31 on which the wafer D is temporarily placed, and a stage identification camera 32 for identifying the wafer D on the intermediate stage 31.

接合部4,係從中間載物台31將晶片D拾取,在被搬送而去的基板P上接合,或以已經在基板P上被接合的晶片上層積之形式進行接合。接合部4,係具有:與拾取頭21同樣地具備將晶片D吸附保持在先端的筒夾42部(也參照圖2)之接合頭41,使接合頭41在Y方向移動之Y驅動部43,與拍攝基板P的位置辨識標記(未圖示)、辨識接合位置之基板辨識攝影機44。 The bonding portion 4 picks up the wafer D from the intermediate stage 31, and bonds the wafer D on the transferred substrate P, or performs lamination on the wafer P already bonded on the substrate P. The bonding section 4 includes a bonding head 41 having a collet 42 (see also FIG. 2) for holding and holding the wafer D at the front end, and a Y driving section 43 for moving the bonding head 41 in the Y direction, similarly to the pickup head 21. And a substrate identification camera 44 that captures a position identification mark (not shown) of the substrate P and a substrate identification position.

利用這樣的構成,接合頭41,係根據載物台辨識攝影機32的攝影資料進行補正拾取位置‧姿勢,從中間載物台31拾取晶片D,根據基板辨識攝影機44的攝影資料而在基板P將晶片D接合。 With this configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the stage recognition camera 32, picks up the wafer D from the intermediate stage 31, and uses the imaging data of the substrate recognition camera 44 to The wafer D is bonded.

搬送部5,係具備載置一枚或複數枚基板P(在圖1為4枚)的基板搬送托板51、與基板搬送托板51移動之托板軌道52,具有並行被設置之同一構造之第1、第2搬送部。基板搬送托板51,係藉由用沿著托板軌道52設置的未圖示的滾珠螺桿來驅動設在基板搬送托板51的未圖示的螺帽而移動。 The transfer unit 5 includes a substrate transfer pallet 51 on which one or a plurality of substrates P (four in FIG. 1) are placed, and a pallet rail 52 that moves with the substrate transfer pallet 51. The transfer unit 5 has the same structure provided in parallel. The first and second conveying sections. The substrate transfer pallet 51 is moved by driving a nut (not shown) provided on the substrate transfer pallet 51 by a ball screw (not shown) provided along the pallet rail 52.

利用這樣的構成,基板搬送托板51,係於基板供給部6載置基板P,沿著托板軌道52移動直到接合位置,接合後,移動直到基板搬出部7,並將基板P移交到基板搬出部7。第1、第2搬送部,相互獨立被驅動,在一方的基板搬送托板51載置的基板P將晶片D接合中,另一方的基板搬送托板51,則搬出基板P,回到基板供給部6,進行載置新的基板P等之準備。 With such a configuration, the substrate transfer tray 51 is placed on the substrate supply unit 6 to place the substrate P, and moves along the tray rail 52 to the bonding position. After bonding, it moves to the substrate carrying portion 7 and transfers the substrate P to the substrate Carry out section 7. The first and second transfer units are driven independently of each other. While the substrate P placed on one substrate transfer tray 51 is bonding the wafer D, and the other substrate transfer tray 51 is used, the substrate P is removed and returned to the substrate supply. The unit 6 prepares for placing a new substrate P and the like.

控制部8,係具備收納監視、控制晶片接合器10各部動作的程式(軟體)之記憶體,與執行被收納在記憶體的程式之中央處理裝置(CPU)。 The control unit 8 is a memory including a program (software) that stores and monitors the operation of each unit of the chip splicer 10, and a central processing unit (CPU) that executes the programs stored in the memory.

其次,使用圖3、圖4說明晶片供給部1之構成。圖3係圖示晶片供給部之外觀斜視圖。圖4係顯示晶片供給部的主要部分之概略剖面圖。 Next, the configuration of the wafer supply unit 1 will be described using FIGS. 3 and 4. FIG. 3 is a perspective view showing the appearance of a wafer supply unit. FIG. 4 is a schematic cross-sectional view showing a main part of a wafer supply section.

晶片供給部1,係具備在水平方向(XY方向)移動之晶圓保持台12、與在上下方向移動之上推單元13。晶圓保持台12,係具有保持晶圓環14之擴展環15,與將黏接被保持在晶圓環14的複數晶片D之切割膠帶16水平定位之支撐環17。上推單元13係配置在支撐環17的內側。 The wafer supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction), and a push-up unit 13 that moves in the vertical direction. The wafer holding table 12 includes an expansion ring 15 holding a wafer ring 14 and a support ring 17 for horizontally positioning a dicing tape 16 that holds a plurality of wafers D held on the wafer ring 14. The push-up unit 13 is disposed inside the support ring 17.

晶片供給部1,係在上推晶片D時,使保持著晶圓環14的擴展環15降下來。結果,被保持在晶圓環14的切割膠帶16會被拉長、擴大晶片D的間隔,利用上推單元13從晶片D下方將晶片D上推,提高晶片D的拾取性。又,伴隨薄型化,將晶片黏接在基板之接著劑係由液狀成為薄膜狀,在晶圓11與切割膠帶16之間黏貼被稱作晶片貼膜(DAF)18的薄膜狀黏接材料。在具有晶片貼膜18之晶圓11,切割,係對著晶圓11與晶片貼膜18進行。從而,在剝離步驟,將晶圓11與晶片貼膜18自切割膠帶16剝離。又,在之後,忽視晶片貼膜18的存在,說明剝離步驟。 The wafer supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the wafer D is pushed up. As a result, the dicing tape 16 held on the wafer ring 14 is stretched and the interval between the wafers D is increased, and the wafer D is pushed up from below the wafer D by the push-up unit 13 to improve the pick-up property of the wafer D. In addition, along with the reduction in thickness, the adhesive for bonding the wafer to the substrate is changed from a liquid state to a thin film state, and a thin film-shaped adhesive material called a die attach film (DAF) 18 is pasted between the wafer 11 and the dicing tape 16. On the wafer 11 having the wafer film 18, dicing is performed on the wafer 11 and the wafer film 18. Therefore, in the peeling step, the wafer 11 and the wafer film 18 are peeled from the dicing tape 16. In the following, the presence of the wafer film 18 is ignored, and the peeling step will be described.

其次,使用圖5說明上推單元。圖5係圖4之上推單元之俯視圖。 Next, the push-up unit will be described using FIG. 5. FIG. 5 is a top view of the push-up unit of FIG. 4.

上推單元13,大致區別來說,具有上推區塊 部131、與圍繞上推區塊部131之周邊部132。上推區塊部131係具有第1區塊131a、與位於第1區塊131a內側的第2區塊131b。周邊部132係具有複數抽吸孔132a。 The push-up unit 13 basically has a push-up block portion 131 and a peripheral portion 132 surrounding the push-up block portion 131. The push-up block section 131 includes a first block 131a and a second block 131b located inside the first block 131a. The peripheral portion 132 has a plurality of suction holes 132a.

其次,使用圖6、7說明本發明人等檢討之技術(以下,稱作比較例)。圖6係顯示關於比較例之筒夾部與上推單元之縱剖面圖。圖7係圖6之筒夾部之底視圖。 Next, a review technique (hereinafter, referred to as a comparative example) by the present inventors will be described with reference to FIGS. 6 and 7. Fig. 6 is a longitudinal sectional view showing a collet portion and a push-up unit in a comparative example. FIG. 7 is a bottom view of the collet portion of FIG. 6. FIG.

如圖6所示,筒夾部22R,係具有橡膠頭25R、與保持橡膠頭25R之橡膠頭夾持器24R。在橡膠頭25R設置真空抽吸孔251R。在橡膠頭夾持器24R的中央有真空抽吸孔26R;在橡膠頭夾持器24R的橡膠頭25R的上面側有真空抽吸溝27R。如圖7所示,橡膠頭23R俯視下係與晶片D同樣的矩形狀,作成與晶片D相同程度的大小。又,上推單元13係與實施例的上推單元13相同者。 As shown in FIG. 6, the collet portion 22R includes a rubber head holder 25R and a rubber head holder 24R holding the rubber head 25R. A vacuum suction hole 251R is provided in the rubber head 25R. A vacuum suction hole 26R is provided in the center of the rubber head holder 24R, and a vacuum suction groove 27R is provided on the upper side of the rubber head 25R of the rubber head holder 24R. As shown in FIG. 7, the rubber head 23R has a rectangular shape similar to the wafer D in plan view, and is formed to have the same size as the wafer D. The push-up unit 13 is the same as the push-up unit 13 of the embodiment.

關於比較例之拾取動作,係從作為切割膠帶16上的目的物之晶片D(剝離對象晶片)於上推單元13與筒夾部22R被定位開始。當定位結束時藉由透過上推單元13的抽吸孔132a或間隙131c、131d進行抽真空,將切割膠帶16吸附在上推單元13的上面。於此狀態下筒夾部22R為朝向晶片D的裝置面邊抽真空邊下降、著地。在此,當上推單元13的主要部分即上推區塊部131升高時,晶片D則在被挾在筒夾部22R與上推區塊131下一併升高,由於切割膠帶16的周邊部仍被真空吸附在上推區塊部131的周邊部132,而於晶片D的周邊產生張力,結果,於晶片D周邊將切割膠帶16剝離。但是,一方面,此時,晶片D周邊係使外側 承受應力、彎曲。如此一來,在與筒夾下面之間會出現間隙,造成空氣流入筒夾部22R的真空抽吸系統(洩漏發生)。一旦洩漏,在晶片D分離時就無法再度保持直到吸附面之下撓曲的晶片D。 The picking operation of the comparative example starts from the positioning of the wafer D (the peeling target wafer) as the target on the dicing tape 16 on the push-up unit 13 and the collet portion 22R. When the positioning is completed, vacuum is passed through the suction holes 132 a or the gaps 131 c and 131 d of the push-up unit 13 to suck the cutting tape 16 on the upper surface of the push-up unit 13. In this state, the collet portion 22R is lowered and landed while being evacuated toward the device surface of the wafer D. Here, when the main part of the push-up unit 13, that is, the push-up block portion 131 is raised, the wafer D is raised and raised next to the collet portion 22R and the push-up block 131. The peripheral portion is still vacuum-adsorbed on the peripheral portion 132 of the push-up block portion 131, and tension is generated around the wafer D. As a result, the dicing tape 16 is peeled off around the wafer D. On the other hand, at this time, the periphery of the wafer D is subjected to stress and bending on the outside. In this way, a gap occurs between the lower surface of the collet, and air flows into the vacuum suction system (leakage) of the collet portion 22R. Once leaked, when the wafer D is separated, it cannot be held again until the wafer D flexes under the suction surface.

其次,使用圖8說明關於實施例之筒夾部。圖8(A)係關於實施例之筒夾部之縱剖面圖。圖8(B)係圖8(A)之筒夾部之底視圖。 Next, the collet portion of the embodiment will be described using FIG. 8. Fig. 8 (A) is a longitudinal sectional view of a collet portion according to the embodiment. Fig. 8 (B) is a bottom view of the collet portion of Fig. 8 (A).

筒夾部22,係具有吸附部25、保持吸附部25之中央部24、位於中央部24外側之外周部28、與位於外周部28上之伸縮管(蛇紋管)部29。 The collet portion 22 includes a suction portion 25, a central portion 24 holding the suction portion 25, an outer peripheral portion 28 located outside the central portion 24, and a telescopic tube (snake tube) portion 29 located on the outer peripheral portion 28.

吸附部25,係例如由橡膠頭所構成,設置與比較例同樣的未圖示的真空抽吸孔(第1抽吸孔)。吸附部25係與晶片D同樣的矩形狀,但比晶片D還小。 The suction section 25 is formed of, for example, a rubber head, and is provided with a vacuum suction hole (first suction hole) (not shown) similar to the comparative example. The suction section 25 has a rectangular shape similar to the wafer D, but is smaller than the wafer D.

中央部24,係具有保持吸附部25的保持部241、從保持部241在上方伸展之管狀部242、與從管狀部242在水平方向伸展之安裝部243。在管狀部242的中央有真空抽吸孔(第2抽吸孔)26;在保持部241的吸附部25的上面側有真空抽吸溝27。 The central portion 24 includes a holding portion 241 holding the suction portion 25, a tubular portion 242 extending upward from the holding portion 241, and a mounting portion 243 extending horizontally from the tubular portion 242. A vacuum suction hole (second suction hole) 26 is provided in the center of the tubular portion 242, and a vacuum suction groove 27 is provided on the upper surface side of the suction portion 25 of the holding portion 241.

外周部28係由垂直部281與水平部282所構成,為箱型狀。外周部28係在與中央部24之間具有空間283。垂直部281的內側與中央部24的保持部241的外側相對向之部分係變狹窄,構成抽吸孔(第3抽吸孔)285。外周部28係沿著管狀部242可以上下動。在外周部28的垂直部281的下面設置與晶片D接觸的接觸部221。接觸部221係依 來自上面的力而變形,追隨晶片D的變形而可以密貼。 The outer peripheral portion 28 is formed of a vertical portion 281 and a horizontal portion 282 and has a box shape. The outer peripheral portion 28 has a space 283 between the outer peripheral portion 28 and the central portion 24. A portion of the inside of the vertical portion 281 facing the outside of the holding portion 241 of the central portion 24 is narrowed to form a suction hole (third suction hole) 285. The outer peripheral portion 28 is movable up and down along the tubular portion 242. A contact portion 221 that is in contact with the wafer D is provided below the vertical portion 281 of the outer peripheral portion 28. The contact portion 221 is deformed by a force from above, and can be closely adhered following the deformation of the wafer D.

伸縮管部(伸縮管機構)29係配置成包圍管狀部242,伸縮管291的上端係連接在安裝部243,下端則連接在外周部28的水平部282,在管狀部242與伸縮管291之間有空間292。空間292係由空間283與設在外周部28的水平部282的連通孔284連繫起來。空間292係通過未圖示的孔而連接在真空抽吸孔26。利用伸縮管部29的上下動而構成外周部28上下動。 The telescopic tube portion (telescoping tube mechanism) 29 is arranged to surround the tubular portion 242. The upper end of the telescopic tube 291 is connected to the mounting portion 243, and the lower end is connected to the horizontal portion 282 of the outer peripheral portion 28. There is room 292. The space 292 is connected by the space 283 and the communication hole 284 provided in the horizontal portion 282 of the outer peripheral portion 28. The space 292 is connected to the vacuum suction hole 26 through a hole (not shown). The outer peripheral portion 28 moves up and down by the vertical movement of the telescopic tube portion 29.

筒夾部22的底面的外周係與晶片D同樣的矩形狀,大小與晶片D相同程度。筒夾部22的底面的外周可以做成或比晶片D還若干大、或若干小。但是,外周部28(接觸部221)的內側則有必要配置在比晶片D的外周的位置還內側。 The outer periphery of the bottom surface of the collet portion 22 is the same rectangular shape as the wafer D, and has the same size as the wafer D. The outer periphery of the bottom surface of the collet portion 22 may be made larger or smaller than the wafer D. However, it is necessary that the inner side of the outer peripheral portion 28 (the contact portion 221) is positioned more than the outer peripheral position of the wafer D.

其次,使用圖5、9A~9E、10說明關於實施例之根據筒夾部之拾取動作。圖9A~9E係關於實施例之筒夾部與上推單元之剖面圖。圖10係顯示拾取動作之處理流程之流程圖。 Next, the pick-up operation according to the collet unit according to the embodiment will be described with reference to FIGS. 5, 9A to 9E, and 10. 9A to 9E are cross-sectional views of the collet portion and the push-up unit of the embodiment. FIG. 10 is a flowchart showing a processing flow of a pickup operation.

步驟S1:控制部8係移動晶圓保持台12使所拾取的晶片D位置於上推單元13的正上方,將剝離對象晶片在上推單元13與筒夾部22定位。移動上推單元13使上推單元13的上面接觸到切割膠帶16的背面。此時,如圖9A所示,控制部8,係作成上推區塊部131的各區塊131a、131b與周邊部132的表面形成同一平面,藉由透過周邊部132的抽吸孔132a與區塊間的間隙131c、131d進行抽真空,而將 切割膠帶16吸附在上推單元13的上面。 Step S1: The control unit 8 moves the wafer holding table 12 so that the picked-up wafer D is positioned directly above the push-up unit 13, and positions the peeling target wafer on the push-up unit 13 and the collet unit 22. The push-up unit 13 is moved so that the upper surface of the push-up unit 13 comes into contact with the back surface of the cutting tape 16. At this time, as shown in FIG. 9A, the control unit 8 is configured so that each of the blocks 131a, 131b of the push-up block portion 131 and the surface of the peripheral portion 132 form the same plane. The gaps 131c and 131d between the blocks are evacuated, and the cutting tape 16 is attracted to the upper surface of the push-up unit 13.

步驟S2:如圖9A所示,控制部8,係使筒夾部22邊抽真空邊降下,著地在剝離對象的晶片D上,利用具有抽吸孔的吸附部25及抽吸孔285(參照圖8)將晶片D吸附。 Step S2: As shown in FIG. 9A, the control unit 8 lowers the collet portion 22 while applying a vacuum, and lands on the wafer D to be peeled, using the suction portion 25 having the suction hole and the suction hole 285 ( (See FIG. 8) The wafer D is sucked.

步驟S3:控制部8,係使上推單元13的主要部分即上推區塊部131的第1區塊131a及第2區塊131b升高。藉此,晶片D在被挾在筒夾部22與上推區塊部131下一併升高,由於切割膠帶16的周邊部仍被真空吸附在上推區塊部131的周邊部132,而於晶片D的周邊產生張力,結果,於晶片D周邊將切割膠帶16剝離。但是,一方面,此時,如圖9B所示,晶片D周邊係使下側承受應力、彎曲。如此一來,形成在與筒夾下面之間出現間隙,造成空氣流入筒夾部22的真空抽吸系統(洩漏發生)。 Step S3: The control unit 8 raises the first block 131a and the second block 131b of the push-up block unit 131, which are the main parts of the push-up unit 13. Thereby, the wafer D is lifted under the collet portion 22 and the push-up block portion 131, and the peripheral portion of the dicing tape 16 is still vacuum-adsorbed on the peripheral portion 132 of the push-up block portion 131, and Tension is generated around the wafer D, and as a result, the dicing tape 16 is peeled off around the wafer D. On the other hand, at this time, as shown in FIG. 9B, the periphery of the wafer D is subjected to stress and bending on the lower side. In this way, a gap is formed between the lower surface of the collet and the vacuum suction system of the collet portion 22 (leakage occurs).

但是,如圖9C所示,筒夾部22的空間283、292係脫離真空,利用伸縮管291的復原力使伸縮管291於下方向擴展,讓外周部28下降。藉此,吸收洩漏的影響。 However, as shown in FIG. 9C, the spaces 283 and 292 of the collet portion 22 are released from the vacuum, and the retractable tube 291 is used to expand the retractable tube 291 in the downward direction to lower the outer peripheral portion 28. Thereby, the influence of leakage is absorbed.

步驟S4:控制部8係使筒夾部22升高。藉此,如圖9D所示,晶片D自切割膠帶16被剝離。如圖9E所示,筒夾部22內部的空間283、292係成為真空,伸縮管291在上方向變狹窄,外周部28被拉起,晶片D的周邊也被拉起,晶片D變平坦。即使因洩漏造成晶片D分離並撓曲直到吸附面之下,也能將晶片D再度保持平坦。藉此,可以搬送平坦的晶片D。 Step S4: The control part 8 raises the collet part 22. Thereby, as shown in FIG. 9D, the wafer D is peeled from the dicing tape 16. As shown in FIG. 9E, the spaces 283 and 292 inside the collet portion 22 become vacuum, the telescopic tube 291 narrows upward, the outer peripheral portion 28 is pulled up, the periphery of the wafer D is also pulled up, and the wafer D becomes flat. Even if the wafer D is separated and flexed under the suction surface due to leakage, the wafer D can be kept flat again. Thereby, the flat wafer D can be transferred.

步驟S5:控制部8,係作成上推區塊部131的各區塊131a、131b與周邊部132的表面形成同一平面,停止利用周邊部132的抽吸孔132a與區塊間的間隙131c、131d之吸附切割膠帶16。控制部8,係移動上推單元13使上推區塊部131的上面離開切割膠帶16的背面。 Step S5: The control unit 8 creates the blocks 131a, 131b of the push-up block portion 131 to form the same plane as the surface of the peripheral portion 132, and stops using the gap 131c between the suction hole 132a of the peripheral portion 132 and the block. 131d 的 attracting cutting tape 16. The control unit 8 moves the push-up unit 13 so that the upper surface of the push-up block portion 131 is separated from the rear surface of the cutting tape 16.

控制部8係反覆進行步驟S1~S5,拾取晶圓11的良品晶片。 The control unit 8 performs steps S1 to S5 repeatedly, and picks up a good wafer of the wafer 11.

其次,使用圖11說明關於實施例之使用晶片接合器之半導體裝置之製造方法。圖11係顯示半導體裝置之製造方法之流程圖。 Next, a method for manufacturing a semiconductor device using a wafer bonder according to an embodiment will be described with reference to FIG. 11. FIG. 11 is a flowchart showing a method of manufacturing a semiconductor device.

步驟S11:將保持被黏貼自晶圓11被分割的晶片D的切割膠帶16之晶圓環14收納到晶圓卡匣(不圖示)、搬入晶片接合器10。控制部8係從被充填晶圓環14的晶圓卡匣將晶圓環14供給至晶片供給部1。此外,準備基板P,將之搬入晶片接合器10。控制部8係於基板供給部6將基板P載置在基板搬送托板51。 Step S11: The wafer ring 14 holding the dicing tape 16 holding the wafer D divided from the wafer 11 is stored in a wafer cassette (not shown) and carried into the wafer adapter 10. The control unit 8 supplies the wafer ring 14 to the wafer supply unit 1 from a wafer cassette filled with the wafer ring 14. In addition, the substrate P is prepared and carried into the wafer bonder 10. The control unit 8 places the substrate P on the substrate transfer tray 51 in the substrate supply unit 6.

步驟S12:控制部8係利用步驟S1~S5將已分割的晶片自晶圓拾取。 Step S12: The control unit 8 picks up the divided wafer from the wafer by using steps S1 to S5.

步驟S13:控制部8係將拾取的晶片搭載在基板P上或層積在已經接合的晶片上。控制部8係將自晶圓11拾取的晶片D載置在中間載物台31,用接合頭41自中間載物台31再度拾取晶片D,在被搬送過來的基板P進行接合。 Step S13: The control unit 8 mounts the picked-up wafer on the substrate P or laminates the bonded wafer. The control unit 8 places the wafer D picked up from the wafer 11 on the intermediate stage 31, picks up the wafer D again from the intermediate stage 31 with the bonding head 41, and performs bonding on the transferred substrate P.

步驟S14:控制部8係於基板搬出部7自基板搬 送托板51將晶片D被接合的基板P取出。自晶片接合器10將基板P搬出。 Step S14: The control unit 8 is based on the substrate carrying-out unit 7 and takes out the substrate P to which the wafer D is bonded from the substrate carrying tray 51. The substrate P is carried out from the wafer bonder 10.

<變形例1>     <Modification 1>    

其次,使用圖12說明關於變形例1之筒夾部。圖12(A)係關於變形例1之筒夾部之縱剖面圖。圖12(B)係圖12(A)之筒夾部之底視圖。 Next, a collet portion according to Modification 1 will be described with reference to FIG. 12. FIG. 12 (A) is a longitudinal sectional view of a collet portion according to Modification 1. FIG. Fig. 12 (B) is a bottom view of the collet portion of Fig. 12 (A).

筒夾部22A,係在筒夾部22追加帽子(hat)部222之物。帽子部222係薄板狀地被黏貼在筒夾部22的接觸部221,連接在保持部241外側與外周部28的下面,在本例係於8處設置真空導入溝223。藉由設置帽子部222,由於追隨晶片D變形之處增加而提高與晶片D的吸附性。又,在外周部28的下面沒有帽子部222之部分則與實施例同樣地具有接觸部221。也可以取代帽子部222而將具有抽吸孔的薄片狀構造設置在保持部241的下面與外周部28的下面之間。又,帽子部也可以在後述之變形例2、3之筒夾部追加。 The collet portion 22A is a thing in which a hat portion 222 is added to the collet portion 22. The cap portion 222 is adhered to the contact portion 221 of the collet portion 22 in a thin plate shape, and is connected to the outside of the holding portion 241 and the lower surface of the outer peripheral portion 28. In this example, vacuum introduction grooves 223 are provided at eight locations. By providing the cap portion 222, the number of places that follow the deformation of the wafer D increases, and the adhesion with the wafer D is improved. In addition, a portion having no cap portion 222 under the outer peripheral portion 28 has a contact portion 221 in the same manner as in the embodiment. Instead of the cap portion 222, a sheet-like structure having a suction hole may be provided between the lower surface of the holding portion 241 and the lower surface of the outer peripheral portion 28. The cap portion may be added to a collet portion of Modifications 2 and 3 described later.

其次,使用圖13A~13E說明關於變形例1之根據筒夾部之拾取動作。圖13A~13E係關於變形例1之筒夾部與上推單元之剖面圖。圖13A~13E係分別對應於圖9A~9E之圖。 Next, the pick-up operation according to the collet section according to Modification 1 will be described with reference to FIGS. 13A to 13E. 13A to 13E are cross-sectional views of a collet portion and a push-up unit according to Modification 1. FIG. 13A to 13E are diagrams corresponding to Figs. 9A to 9E, respectively.

如圖13A所示,控制部8,係作成上推區塊部131的各區塊131a、131b與周邊部132的表面形成同一平面,藉由透過周邊部132的抽吸孔132a與區塊間的間隙 131c、131d進行抽真空,而將切割膠帶16吸附在上推單元13的上面(步驟S1)。 As shown in FIG. 13A, the control unit 8 is configured to push up each of the blocks 131a, 131b of the block portion 131 to form the same plane as the surface of the peripheral portion 132, and pass through the suction hole 132a of the peripheral portion 132 to the block. The gaps 131c and 131d are evacuated, and the cutting tape 16 is adsorbed on the upper surface of the push-up unit 13 (step S1).

此外,如圖13A所示,控制部8,係使筒夾部22A邊抽真空邊降下,著地在剝離對象的晶片D上,利用具有抽吸孔的吸附部25及抽吸孔283將晶片D吸附(步驟S2)。 In addition, as shown in FIG. 13A, the control unit 8 lowers the collet portion 22A while vacuuming, and lands on the wafer D to be peeled, and uses the suction portion 25 and the suction hole 283 with suction holes to lift the wafer. D adsorption (step S2).

如圖13B所示,控制部8,在使上推單元13的主要部分即上推區塊部131的第1區塊131a及第2區塊131b升高時,晶片D周邊形成於下側承受應力、彎曲,在與筒夾下面之間出現間隙,造成空氣流入筒夾部22A的真空抽吸系統(洩漏發生)。但是,如圖13C所示,筒夾部22A的空間283、292係脫離真空,利用伸縮管291的復原力使伸縮管291於下方向擴展,讓外周部28下降(步驟S3)。藉此,吸收洩漏的影響。又,當外周部28下降時,帽子部222會變斜。 As shown in FIG. 13B, when the control unit 8 raises the first block 131a and the second block 131b of the push-up block 131, which is the main part of the push-up unit 13, the periphery of the wafer D is formed on the lower side to receive Stress and bending cause a gap between the lower surface of the collet and air flow into the vacuum suction system (leakage) of the collet portion 22A. However, as shown in FIG. 13C, the spaces 283 and 292 of the collet portion 22A are released from the vacuum, and the restoring force of the telescopic tube 291 is used to expand the telescopic tube 291 in the downward direction to lower the outer peripheral portion 28 (step S3). Thereby, the influence of leakage is absorbed. When the outer peripheral portion 28 is lowered, the hat portion 222 is inclined.

如圖13D所示,在控制部8使筒夾升高時,晶片D被剝離切割膠帶16(步驟S4)。如圖13E所示,筒夾部22A內部的空間283、292係成為真空,伸縮管291在上方向變狹窄,外周部28被拉起,晶片D的周邊也被拉起,晶片D變平坦。又,當外周部28上升時,帽子部222也成為水平。即使因洩漏造成晶片D分離並撓曲直到吸附面之下,晶片D也能再度保持平坦。藉此,可以搬送平坦的晶片D。 As shown in FIG. 13D, when the control unit 8 raises the collet, the wafer D is peeled from the dicing tape 16 (step S4). As shown in FIG. 13E, the spaces 283 and 292 inside the collet portion 22A become vacuum, the telescopic tube 291 narrows upward, the outer peripheral portion 28 is pulled up, the periphery of the wafer D is also pulled up, and the wafer D becomes flat. When the outer peripheral portion 28 rises, the hat portion 222 also becomes horizontal. Even if the wafer D is separated and flexed due to the leak until it is under the suction surface, the wafer D can be kept flat again. Thereby, the flat wafer D can be transferred.

<變形例2>     <Modification 2>    

其次,使用圖14說明關於變形例2之筒夾部。圖14(A)係關於實施例之筒夾部之縱剖面圖。圖14(B)係圖14(A)之筒夾部之底視圖。 Next, a collet portion according to Modification 2 will be described with reference to FIG. 14. Fig. 14 (A) is a longitudinal sectional view of a collet portion according to the embodiment. Fig. 14 (B) is a bottom view of the collet portion of Fig. 14 (A).

筒夾部22B,係取代筒夾部22的伸縮管部29而設置隔膜部29B之物。隔膜(diaphragm)部(隔膜機構)29B係配置成包圍管狀部242,隔膜291B的內側端係連接在安裝部243B的下面,外側端係連接在設置於外周部28B的上部之筒部286B的上部。筒部286B於俯視下係圓環狀。中央部24B與外周部28B之間之空間283、與管狀部242與隔膜部29B之間的空間292B,係由設置在外周部28B的水平部282之連通孔284所連繫。空間292B係通過未圖示的孔而連接在真空抽吸孔26。通常時,安裝部243B的下面係在比筒部286B的上部還低的位置。利用隔膜部29B上下動而構成外周部28B上下動。 The collet part 22B is a thing provided with the diaphragm part 29B instead of the telescopic tube part 29 of the collet part 22. The diaphragm (diaphragm) portion (diaphragm mechanism) 29B is arranged to surround the tubular portion 242. The inner end of the diaphragm 291B is connected to the lower portion of the mounting portion 243B, and the outer end is connected to the upper portion of the cylindrical portion 286B provided on the upper portion of the outer peripheral portion 28B. . The tube portion 286B is annular in a plan view. A space 283 between the central portion 24B and the outer peripheral portion 28B and a space 292B between the tubular portion 242 and the diaphragm portion 29B are connected by a communication hole 284 provided in the horizontal portion 282 of the outer peripheral portion 28B. The space 292B is connected to the vacuum suction hole 26 through a hole (not shown). Normally, the lower surface of the mounting portion 243B is positioned lower than the upper portion of the cylindrical portion 286B. The diaphragm portion 29B moves up and down to constitute the outer peripheral portion 28B move up and down.

其次,使用圖9A~9E、15A~15E說明關於變形例2之根據筒夾部之拾取動作。圖15A~15E係關於變形例2之筒夾部與上推單元之剖面圖。圖15A~15E係分別對應於圖9A~9E之圖。 Next, the pick-up operation according to the collet section according to Modification 2 will be described with reference to FIGS. 9A to 9E and 15A to 15E. 15A to 15E are cross-sectional views of a collet portion and a push-up unit according to Modification 2. FIG. 15A to 15E are diagrams corresponding to Figs. 9A to 9E, respectively.

如圖15A所示,控制部8,係作成上推區塊部131的各區塊131a、131b與周邊部132的表面形成同一平面,藉由透過周邊部132的抽吸孔132a與區塊間的間隙131c、131d進行抽真空,而將切割膠帶16吸附在上推單元13的上面(步驟S1)。 As shown in FIG. 15A, the control unit 8 is configured to push up the blocks 131a, 131b of the block portion 131 to form the same plane as the surface of the peripheral portion 132, and pass through the suction holes 132a of the peripheral portion 132 and the blocks. The gaps 131c and 131d are evacuated, and the cutting tape 16 is adsorbed on the upper surface of the push-up unit 13 (step S1).

此外,如圖15A所示,控制部8,係使筒夾部22B邊抽真空邊降下,著地在剝離對象的晶片D上,利用具有抽吸孔的吸附部25及抽吸孔283將晶片D吸附(步驟S2)。 In addition, as shown in FIG. 15A, the control unit 8 lowers the collet portion 22B while evacuating, and lands on the wafer D to be peeled, and uses the suction portion 25 having the suction hole and the suction hole 283 to hold the wafer. D adsorption (step S2).

如圖15B所示,控制部8,在使上推單元13的主要部分即上推區塊部131的第1區塊131a及第2區塊131b升高時,晶片D周邊形成於下側承受應力、彎曲,在與筒夾下面之間出現間隙,造成空氣流入筒夾部22B的真空抽吸系統(洩漏發生)。但是,如圖15C所示,筒夾部22B的空間283、292B係脫離真空,利用隔膜291B的復原力使上面成為水平,降下外周部28B(步驟S3)。藉此,吸收洩漏的影響。 As shown in FIG. 15B, when the control unit 8 raises the first block 131a and the second block 131b of the push-up block section 131, which is the main part of the push-up unit 13, the periphery of the wafer D is formed on the lower side to receive Stress and bending cause a gap between the lower surface of the collet and air flow into the vacuum suction system of the collet portion 22B (leakage occurs). However, as shown in FIG. 15C, the spaces 283 and 292B of the collet portion 22B are released from the vacuum, the upper surface is leveled by the restoring force of the diaphragm 291B, and the outer peripheral portion 28B is lowered (step S3). Thereby, the influence of leakage is absorbed.

如圖15D所示,在控制部8使筒夾升高時,晶片D被剝離切割膠帶16(步驟S4)。如圖15E所示,筒夾部22B內部的空間283、292B係成為真空,隔膜291B的上面周邊部在上方向移動,外周部28B被拉起,晶片D的周邊也被拉起,晶片D變平坦。即使因洩漏造成晶片D分離並撓曲直到吸附面之下,晶片D也能再度保持平坦。藉此,可以搬送平坦的晶片D。 As shown in FIG. 15D, when the control unit 8 raises the collet, the wafer D is peeled from the dicing tape 16 (step S4). As shown in FIG. 15E, the spaces 283 and 292B inside the collet portion 22B become vacuum, the upper peripheral portion of the diaphragm 291B moves in the upward direction, the outer peripheral portion 28B is pulled up, the periphery of the wafer D is also pulled up, and the wafer D becomes flat. Even if the wafer D is separated and flexed due to the leak until it is under the suction surface, the wafer D can be kept flat again. Thereby, the flat wafer D can be transferred.

<變形例3>     <Modification 3>    

其次,使用圖16說明關於變形例3之筒夾部。圖16(A)係關於實施例之筒夾部之縱剖面圖。圖16(B)係圖16(A)之筒夾部之底視圖。 Next, a collet portion according to Modification 3 will be described with reference to FIG. 16. Fig. 16 (A) is a longitudinal sectional view of a collet portion according to the embodiment. Fig. 16 (B) is a bottom view of the collet portion of Fig. 16 (A).

筒夾部22C,係取代筒夾部22的伸縮管部29而設置活塞部29C之物。活塞部29C係配置成包圍管狀部242,具有蓋部291C與彈簧293C。蓋部291C的內側端係連接在安裝部243C的下面,外側端則連接在筒部286C的上部。彈簧293C係設置在外周部28C的水平部282之間。中央部24C與外周部28C之間之空間283、與管狀部242與活塞部29C之間的空間292C,係由設置在外周部28C的水平部282之連通孔284所連繫。空間292C係通過未圖示的孔而連接在真空抽吸孔26。筒部286C於俯視下係圓環狀。利用彈簧293C上下動而構成外周部28C上下動。 The collet portion 22C is a piston portion 29C provided in place of the telescopic tube portion 29 of the collet portion 22. The piston portion 29C is disposed so as to surround the tubular portion 242 and includes a cover portion 291C and a spring 293C. The inner end of the cover portion 291C is connected to the lower surface of the mounting portion 243C, and the outer end is connected to the upper portion of the cylindrical portion 286C. The spring 293C is provided between the horizontal portions 282 of the outer peripheral portion 28C. A space 283 between the central portion 24C and the outer peripheral portion 28C and a space 292C between the tubular portion 242 and the piston portion 29C are connected by a communication hole 284 provided in the horizontal portion 282 of the outer peripheral portion 28C. The space 292C is connected to the vacuum suction hole 26 through a hole (not shown). The tube portion 286C is annular in a plan view. The spring 293C moves up and down, and the outer peripheral portion 28C moves up and down.

其次,使用圖17A~17E說明關於變形例3之根據筒夾部之拾取動作。圖17A~17E係關於變形例3之筒夾部與上推單元之剖面圖。圖17A~17E係分別對應於圖9A~9E之圖。 Next, the pick-up operation by the collet unit according to Modification 3 will be described with reference to FIGS. 17A to 17E. 17A to 17E are cross-sectional views of a collet portion and a push-up unit according to Modification 3. FIG. 17A to 17E are diagrams corresponding to Figs. 9A to 9E, respectively.

如圖17A所示,控制部8,係作成上推區塊部131的各區塊131a、131b與周邊部132的表面形成同一平面,藉由透過周邊部132的抽吸孔132a與區塊間的間隙131c、131d進行抽真空,而將切割膠帶16吸附在上推單元13的上面(步驟S1)。 As shown in FIG. 17A, the control unit 8 is configured to push up each of the blocks 131a, 131b of the block portion 131 to form the same plane as the surface of the peripheral portion 132, and pass through the suction hole 132a of the peripheral portion 132 to the block. The gaps 131c and 131d are evacuated, and the cutting tape 16 is adsorbed on the upper surface of the push-up unit 13 (step S1).

此外,如圖17A所示,控制部8,係使筒夾部22C邊抽真空邊降下,著地在剝離對象的晶片D上,利用具有抽吸孔的吸附部25及抽吸孔283將晶片D吸附(步驟S2)。 In addition, as shown in FIG. 17A, the control unit 8 lowers the collet portion 22C while vacuuming, and lands on the wafer D to be peeled, and uses the suction portion 25 and the suction hole 283 with suction holes to lift the wafer. D adsorption (step S2).

如圖17B所示,控制部8,在使上推單元13的 主要部分即上推區塊部131的第1區塊131a及第2區塊131b升高時,晶片D周邊形成於下側承受應力、彎曲,在與筒夾下面之間出現間隙,造成空氣流入筒夾部22C的真空抽吸系統(洩漏發生)。但是,如圖17C所示,筒夾部22C的空間283、292C係脫離真空,利用彈簧293C的復原力,讓外周部28C下降(步驟S3)。藉此,吸收洩漏的影響。 As shown in FIG. 17B, when the control unit 8 raises the first block 131a and the second block 131b of the push-up block section 131, which is the main part of the push-up unit 13, the periphery of the wafer D is formed on the lower side to receive Stress and bending cause a gap between the lower surface of the collet and air flow into the vacuum suction system of the collet portion 22C (leakage occurs). However, as shown in FIG. 17C, the spaces 283 and 292C of the collet portion 22C are released from the vacuum, and the restoring force of the spring 293C is used to lower the outer peripheral portion 28C (step S3). Thereby, the influence of leakage is absorbed.

如圖17D所示,在控制部8使筒夾升高時,晶片D被剝離切割膠帶16(步驟S4)。如圖17E所示,筒夾部22C內部的空間283、292C係成為真空,彈簧293C的下端朝上方向移動,外周部28C被拉起,晶片D的周邊也被拉起,晶片D變平坦。即使因洩漏造成晶片D分離並撓曲直到吸附面之下,晶片D也能再度保持平坦。藉此,可以搬送平坦的晶片D。 As shown in FIG. 17D, when the control unit 8 raises the collet, the wafer D is peeled from the dicing tape 16 (step S4). As shown in FIG. 17E, the spaces 283 and 292C inside the collet portion 22C become vacuum, the lower end of the spring 293C moves upward, the outer peripheral portion 28C is pulled up, the periphery of the wafer D is also pulled up, and the wafer D becomes flat. Even if the wafer D is separated and flexed due to the leak until it is under the suction surface, the wafer D can be kept flat again. Thereby, the flat wafer D can be transferred.

<變形例4>     <Modification 4>    

其次,使用圖18說明關於變形例4之筒夾部。圖18係關於變形例4之筒夾部之縱剖面圖。 Next, a collet portion according to Modification 4 will be described with reference to FIG. 18. 18 is a longitudinal sectional view of a collet portion according to a fourth modification.

筒夾部22D,係變更筒夾部22B的隔膜部29B之隔膜構成之物。隔膜部29D亦可以包圍管狀部242之方式將2個隔膜291B、293B平行地、空出間隔配置在2處而構成。隔膜291B的內側端係連接在安裝部243B的下面,外側端則連接在外周部28D的上部。隔膜293B的內側端係配置取代變形例2的外周部28B的水平部282,以與隔膜291B的間隔為相同間隔之方式,內側端連接在安裝部244B的下 面,外側端則連接在外周部28D。利用該構造,以2枚隔膜將外周部28D的內側面與保持部241的外側面經常性保持平行,防止接觸。藉此,可以防止因接觸造成之異物或咬入、動作不良。 The collet portion 22D is obtained by changing the diaphragm configuration of the diaphragm portion 29B of the collet portion 22B. The diaphragm portion 29D may be configured such that the two diaphragms 291B and 293B are arranged in parallel and spaced apart at two places so as to surround the tubular portion 242. The inner end of the diaphragm 291B is connected to the lower surface of the mounting portion 243B, and the outer end is connected to the upper portion of the outer peripheral portion 28D. The inner end of the diaphragm 293B is provided with a horizontal portion 282 instead of the outer peripheral portion 28B of Modification 2. The inner end is connected to the lower surface of the mounting portion 244B at the same interval as the diaphragm 291B, and the outer end is connected to the outer peripheral portion 28D . With this structure, the inner surface of the outer peripheral portion 28D and the outer surface of the holding portion 241 are constantly kept parallel with two diaphragms to prevent contact. This can prevent foreign matter, bite, and malfunction due to contact.

<變形例5>     <Modification 5>    

其次,使用圖9A~9C、19、20A、20B說明關於實施例之根據筒夾部之拾取動作之變形例。 Next, a modified example of the pick-up operation by the collet unit according to the embodiment will be described with reference to FIGS. 9A to 9C, 19, 20A, and 20B.

步驟S1:控制部8係移動晶圓保持台12使所拾取的晶片D位置於上推單元13的正上方,將剝離對象晶片在上推單元13與筒夾部22定位。移動上推單元13使上推單元13的上面接觸到切割膠帶16的背面。此時,如圖9A所示,控制部8,係作成上推區塊部131的各區塊131a、131b與周邊部132的表面形成同一平面,藉由透過周邊部132的抽吸孔132a與區塊間的間隙131c、131d進行抽真空,而將切割膠帶16吸附在上推單元13的上面。 Step S1: The control unit 8 moves the wafer holding table 12 so that the picked-up wafer D is positioned directly above the push-up unit 13, and positions the peeling target wafer on the push-up unit 13 and the collet unit 22. The push-up unit 13 is moved so that the upper surface of the push-up unit 13 comes into contact with the back surface of the cutting tape 16. At this time, as shown in FIG. 9A, the control unit 8 is configured so that each of the blocks 131a, 131b of the push-up block portion 131 forms the same plane as the surface of the peripheral portion 132, and passes through the suction holes 132a of the peripheral portion 132 and The gaps 131c and 131d between the blocks are evacuated, and the cutting tape 16 is attracted to the upper surface of the push-up unit 13.

步驟S2:如圖9A所示,控制部8,係使筒夾部22邊抽真空邊降下,著地在剝離對象的晶片D上,利用具有抽吸孔的吸附部25及抽吸孔283將晶片D吸附。 Step S2: As shown in FIG. 9A, the control unit 8 lowers the collet portion 22 while vacuuming, and lands on the wafer D to be peeled, and uses the suction portion 25 having the suction hole and the suction hole 283 to Wafer D is adsorbed.

步驟S3:控制部8,係使上推單元13的主要部分即上推區塊部131的第1區塊131a及第2區塊131b升高。藉此,晶片D在被挾在筒夾部22與上推區塊部131下一併升高,由於切割膠帶16的周邊部仍被真空吸附在上推區塊部131的周邊部132,而於晶片D的周邊產生張力,結果,於 晶片D周邊將切割膠帶16剝離。但是,一方面,此時,如圖9B所示,晶片D周邊係使下側承受應力、彎曲。如此一來,形成在與筒夾下面之間出現間隙,造成空氣流入筒夾部22的真空抽吸系統(洩漏發生)。 Step S3: The control unit 8 raises the first block 131a and the second block 131b of the push-up block unit 131, which are the main parts of the push-up unit 13. Thereby, the wafer D is lifted under the collet portion 22 and the push-up block portion 131, and the peripheral portion of the dicing tape 16 is still vacuum-adsorbed on the peripheral portion 132 of the push-up block portion 131, and Tension is generated around the wafer D, and as a result, the dicing tape 16 is peeled off around the wafer D. On the other hand, at this time, as shown in FIG. 9B, the periphery of the wafer D is subjected to stress and bending on the lower side. In this way, a gap is formed between the lower surface of the collet and the vacuum suction system of the collet portion 22 (leakage occurs).

但是,如圖9C所示,筒夾部22的空間283、292係脫離真空,利用伸縮管291的復原力使伸縮管291於下方向擴展,讓外周部28下降。 However, as shown in FIG. 9C, the spaces 283 and 292 of the collet portion 22 are released from the vacuum, and the retractable tube 291 is used to expand the retractable tube 291 in the downward direction to lower the outer peripheral portion 28.

步驟S31:控制部8,係作成上推區塊部131的各區塊131a、131b與周邊部132的表面形成同一平面,使筒夾降下。藉此,如圖20A所示,筒夾部22內部的空間283、292係成為真空,伸縮管291在上方向變狹窄,外周部28被拉起,晶片D的周邊也被拉起,晶片D變平坦。即使因洩漏造成晶片D分離並撓曲直到吸附面之下,晶片D也能再度保持平坦。藉此,可以搬送平坦的晶片D。 Step S31: The control unit 8 makes each block 131a, 131b of the push-up block portion 131 and the surface of the peripheral portion 132 form the same plane to lower the collet. Thereby, as shown in FIG. 20A, the spaces 283 and 292 inside the collet portion 22 become vacuum, the telescopic tube 291 becomes narrower in the upward direction, the outer peripheral portion 28 is pulled up, the periphery of the wafer D is also pulled up, and the wafer D Becomes flat. Even if the wafer D is separated and flexed due to the leak until it is under the suction surface, the wafer D can be kept flat again. Thereby, the flat wafer D can be transferred.

步驟S4:控制部8係使筒夾部22升高。藉此,如圖20B所示,晶片D自切割膠帶16被剝離。 Step S4: The control part 8 raises the collet part 22. Thereby, as shown in FIG. 20B, the wafer D is peeled from the dicing tape 16.

步驟S51:控制部8,係停止利用周邊部132的抽吸孔132a、與區塊間的間隙131c、131d之吸附切割膠帶16。控制部8,係移動上推單元13使上推部131的上面離開切割膠帶16的背面。 Step S51: The control unit 8 stops the suction cutting tape 16 using the suction holes 132a of the peripheral portion 132 and the gaps 131c and 131d between the blocks. The control unit 8 moves the push-up unit 13 so that the upper surface of the push-up portion 131 is separated from the rear surface of the cutting tape 16.

控制部8係反覆進行步驟S1~S51,拾取晶圓11的良品晶片。 The control unit 8 performs steps S1 to S51 repeatedly, and picks up a good wafer of the wafer 11.

關於變形例5的拾取動作,不僅適用於實施例的筒夾,也可適用於關於變形例1~4之筒夾部。又,藉由 使用關於比較例之筒夾部並進行與關於變形例5之拾取動作同樣的動作能夠發揮同樣的效果。即使成為圖6所示之類的狀態晶片D撓曲,當與步驟S31(圖20A)同樣進行時,由於晶片D成為水平(晶片D撓曲解除),所以筒夾部22R能夠再度保持晶片D。藉此,於步驟S4在使筒夾部22R升高時,可以與圖20B同樣地將晶片D剝離切割膠帶16。 The picking operation of the fifth modification is applicable not only to the collets of the embodiment but also to the collet portions of the first to fourth modifications. The same effect can be exhibited by using the collet portion of the comparative example and performing the same operation as that of the pickup operation of the fifth modification. Even if the wafer D is deflected in the state shown in FIG. 6, when the wafer D is leveled (wafer D is deflected) when it is performed in the same manner as in step S31 (FIG. 20A), the collet portion 22R can hold the wafer D again. . Thereby, when raising the collet part 22R in step S4, the wafer D can be peeled from the dicing tape 16 similarly to FIG. 20B.

根據以上的實施例及變形例,可以發揮下述之類的作用效果。 According to the above embodiments and modifications, the following effects can be achieved.

(1)關於實施例之筒夾,係可以藉由追隨所拾取的晶片的剖面形狀變化,筒夾的外周部會自動地上下防止吸附晶片時洩漏,確實地進行拾取。 (1) With regard to the collet of the embodiment, the cross-sectional shape of the picked-up wafer can be followed, and the outer peripheral portion of the collet can be automatically picked up and down to prevent leakage when the wafer is sucked, and can be reliably picked up.

(2)關於實施例之筒夾,係可以使其外周部因應筒夾內的吸附壓而利用伸縮管功能自動地(自然地)上下動。 (2) With regard to the collet of the embodiment, the outer peripheral portion of the collet can be moved up and down automatically (naturally) using the telescopic tube function in response to the suction pressure in the collet.

(3)關於實施例之筒夾,係可以利用其伸縮管的反作用力,控制筒夾外周部對晶片之反作用力(復原力)及拾取開始時外周部的基準位置。 (3) With regard to the collet of the embodiment, the reaction force (restoring force) of the collet outer peripheral portion to the wafer and the reference position of the outer peripheral portion when picking up can be controlled using the reaction force of the telescopic tube.

(4)關於變形例2、4之筒夾,係可以使其外周部因應筒夾內的吸附壓而利用隔膜自動地(自然地)上下動。 (4) Regarding the collets of Modifications 2 and 4, the outer peripheral portion of the collet can be moved up and down automatically (naturally) by the diaphragm in response to the suction pressure in the collet.

(5)關於變形例2、4之筒夾,係可以控制其隔膜的背壓,控制筒夾外周部對晶片之反作用力(復原力)及位置。 (5) Regarding the collets of Modifications 2 and 4, the back pressure of the diaphragm can be controlled, and the reaction force (restoring force) and position of the collet outer peripheral portion to the wafer can be controlled.

(6)關於變形例2、4之筒夾,係可以控制其隔膜的背壓,於拾取開始時外周部的位置突出之狀態下開始吸附晶片。 (6) Regarding the collets of Modifications 2 and 4, the back pressure of the diaphragm can be controlled, and the wafer is adsorbed in a state where the position of the outer peripheral portion is protruded at the start of pickup.

(7)關於變形例1之筒夾,係可以藉由在其吸附部外周 具有帽子構造、且追隨所拾取的晶片的剖面形狀變化,使筒夾的外周部自動地上下、壓下帽子構造的外周,防止洩漏。 (7) Regarding the collet of Modification 1, the cap structure is provided on the outer periphery of the suction portion, and the cross-sectional shape of the picked-up wafer can be changed, so that the outer periphery of the collet can be automatically moved up and down to press down the cap structure. Peripheral to prevent leakage.

(8)關於變形例1之筒夾,係可以藉由在其外周部與吸附部表面具有薄片狀構造、且追隨所拾取的晶片的剖面形狀變化,使外周部壓下,防止洩漏。 (8) With regard to the collet according to Modification 1, the outer peripheral portion and the surface of the suction portion have a sheet-like structure, and the cross-sectional shape of the picked-up wafer can be changed to suppress the outer peripheral portion to prevent leakage.

(9)關於變形例3之筒夾,係可以藉由具有活塞形狀,使筒夾的外周部因應筒夾內的吸附壓力,利用活塞內壓所形成的壓縮力,自動地(自然地)上下動。 (9) With regard to the collet according to Modification 3, the outer peripheral portion of the collet can be automatically (naturally) moved up and down by using the compression force formed by the internal pressure of the piston according to the adsorption pressure in the collet by having a piston shape. move.

(10)關於變形例5之拾取動作,係可以藉由降下筒夾部及上推區塊部,由於可以將晶片D形成水平,而更確實地將筒夾部22內部做成真空。 (10) Regarding the pickup operation of the modification 5, the wafer D can be formed horizontally by lowering the collet portion and the push-up block portion, so that the inside of the collet portion 22 can be made more vacuum.

以上,基於實施例及變形例具體說明由本案創作人所完成的創作,但本創作並不以前述實施例及變形例為限,當然可以進行種種的變更。 In the foregoing, the creation by the creator of the present case has been specifically described based on the embodiment and the modification, but the creation is not limited to the foregoing embodiment and modification, and of course, various changes can be made.

在實施例說明使用區塊上推晶片之例,但也可以取代區塊而使用插針(注射針)。 In the embodiment, an example is described in which a wafer is pushed up using a block, but a pin (injection needle) may be used instead of the block.

此外,在實施例,說明使用晶片貼膜之例,但也可以設置在基板塗布接著劑之預成形(preform)部而不使用晶片貼膜。 In the embodiment, an example in which a wafer film is used is described, but it may be provided in a preform portion of a substrate coating adhesive without using a wafer film.

此外,在實施例,針對自晶片供給部以拾取頭將晶片拾取並載置於中間載物台,以接合頭將被載置於中間載物台的晶片接合到基板之晶片接合器加以說明,但並不以此為限,可以適用於自晶片供給部拾取晶片之半導 體製造裝置。 In addition, in the embodiment, a wafer bonder that picks up a wafer from a wafer supply unit with a pick-up head and places it on an intermediate stage, and uses a bonding head to bond a wafer placed on the intermediate stage to a substrate will be described. However, it is not limited to this, and can be applied to a semiconductor manufacturing apparatus that picks up a wafer from a wafer supply unit.

例如,也可以適用於沒有中間載物台與拾取頭,將晶片供給部的晶片以接合頭接合到基板之晶片接合器。 For example, the present invention is also applicable to a wafer bonder that does not have an intermediate stage and a pick-up head, and uses a bonding head to bond a wafer of a wafer supply unit to a substrate.

此外,也可以適用於沒有中間載物台,自晶片供給部將晶片拾取、將晶片拾取頭朝上旋轉並把晶片交付到接合頭、以接合頭接合到基板之覆晶接合器。 It can also be applied to a flip-chip bonder that does not have an intermediate stage, picks up a wafer from a wafer supply unit, rotates the wafer pick-up head upward, delivers the wafer to a bonding head, and bonds the bonding head to a substrate.

此外,可以適用於沒有中間載物台與接合頭,將自晶片供給部以拾取頭拾取之晶片載置於托盤等之晶片分類器(sorter)。 In addition, it can be applied to a wafer sorter that does not have an intermediate stage and a bonding head, and mounts a wafer picked up by a pick-up head from a wafer supply unit on a tray or the like.

Claims (14)

一種半導體製造裝置,其特徵係具備吸附晶片(die)之筒夾部;前述筒夾部具備:有第1抽吸孔、吸附前述晶片的中央附近之吸附部,保持前述吸附部之保持部,連接在前述保持部、具有與第1抽吸孔連繫的第2抽吸孔之管狀部,位置於前述保持部及前述管狀部的外側之外周部,於前述保持部及前述管狀部與外周部之間所構成之第3抽吸孔,與藉由前述晶片的周邊部朝下方向撓曲使前述第3抽吸孔發生洩漏且藉由其內壓增加而將前述外周部壓下並抵接在前述晶片的周邊部,藉由前述洩漏的發生消除且其內壓減少而將前述外周部拉起並將前述晶片的周邊部拉起之手段。A semiconductor manufacturing apparatus is characterized by including a collet section for adsorbing a die. The collet section includes a suction section having a first suction hole and a vicinity of a center that adsorbs the wafer, and a holding section that holds the suction section. A tubular portion connected to the holding portion and having a second suction hole connected to the first suction hole is positioned on the holding portion and the outer peripheral portion of the tubular portion, and on the holding portion and the tubular portion and the outer periphery. The third suction hole formed between the parts and the peripheral part of the wafer are deflected downward to cause the third suction hole to leak, and the internal pressure is increased to press the outer peripheral part to abut. It is connected to the peripheral portion of the wafer, and means for pulling up the outer peripheral portion and pulling up the peripheral portion of the wafer by eliminating the occurrence of the leakage and reducing the internal pressure. 如申請專利範圍第1項記載之半導體製造裝置,其中前述手段係被設在前述外周部的上方、且前述管狀部的外側之伸縮管機構;當內壓增加時以伸縮管機構的復原力將前述外周部壓下,當內壓減少時則以其抽吸力將前述外周部拉起。For example, the semiconductor manufacturing device described in item 1 of the patent application range, wherein the aforementioned means is a telescopic tube mechanism provided above the outer peripheral portion and outside the tubular portion; when the internal pressure is increased, the restoring force of the telescopic tube mechanism is used. The outer peripheral portion is depressed, and when the internal pressure is reduced, the outer peripheral portion is pulled up by its suction force. 如申請專利範圍第2項記載之半導體製造裝置,其中前述伸縮管機構,係由從前述管狀部水平伸展之安裝部、前述外周部的水平部、與連接在前述安裝部與前述外周部的水平部之間之伸縮管所構成,與設在前述外周部的水平部之孔相通而使前述伸縮管機構與前述第3抽吸孔連通。The semiconductor manufacturing device according to item 2 of the scope of patent application, wherein the telescopic tube mechanism includes a mounting portion extending horizontally from the tubular portion, a horizontal portion of the outer peripheral portion, and a level connected to the mounting portion and the outer peripheral portion. The telescopic tube formed between the parts communicates with a hole provided in the horizontal part of the outer peripheral part, so that the telescopic tube mechanism communicates with the third suction hole. 如申請專利範圍第1項記載之半導體製造裝置,其中前述手段係被設在前述外周部的上方、且前述管狀部的外側之隔膜機構;當內壓增加時以隔膜機構的復原力將前述外周部壓下,當內壓減少時則以其抽吸力將前述外周部拉起。The semiconductor manufacturing device according to item 1 of the scope of the patent application, wherein the aforementioned means is a diaphragm mechanism provided above the outer peripheral portion and outside the tubular portion; when the internal pressure increases, the outer periphery is restored by the restoring force of the diaphragm mechanism. When the internal pressure is reduced, the outer peripheral portion is pulled up by its suction force. 如申請專利範圍第4項記載之半導體製造裝置,其中前述隔膜機構,係由從前述管狀部水平伸展之安裝部、前述外周部的上部的水平部、前述外周部的上部的垂直部、與連接在前述安裝部、前述外周部的上部的水平部與前述外周部的上部的垂直部之間之隔膜所構成,與設在前述外周部的上部之孔相通而使前述隔膜機構與前述第2抽吸孔連通。The semiconductor manufacturing device according to item 4 of the scope of patent application, wherein the diaphragm mechanism is connected by a mounting portion extending horizontally from the tubular portion, a horizontal portion above the outer peripheral portion, a vertical portion above the outer peripheral portion, and The diaphragm is formed between the mounting portion, the horizontal portion of the upper portion of the outer peripheral portion, and the vertical portion of the upper portion of the outer peripheral portion, and communicates with a hole provided in the upper portion of the outer peripheral portion to connect the diaphragm mechanism to the second pumping portion. The suction holes communicate. 如申請專利範圍第4項記載之半導體製造裝置,其中前述隔膜機構,係由:從前述管狀部水平伸展的第1安裝部、從比前述第1安裝部下方的前述管狀部水平伸展 的第2安裝部、前述外周部的上部的水平部、連接在前述第1安裝部與前述外周部的上部之間之第1隔膜、與連接在前述第2安裝部與比前述外周部的前述上部下方的前述外周部之間之第2隔膜所構成。The semiconductor manufacturing device according to item 4 of the scope of patent application, wherein the diaphragm mechanism includes a first mounting portion extending horizontally from the tubular portion, and a second mounting portion extending horizontally from the tubular portion below the first mounting portion. A mounting portion, a horizontal portion above the outer peripheral portion, a first diaphragm connected between the first mounting portion and the upper portion of the outer peripheral portion, and a connection between the second mounting portion and the upper portion below the outer peripheral portion The second diaphragm is formed between the outer peripheral portions. 如申請專利範圍第1項記載之半導體製造裝置,其中前述手段係被設在前述外周部的上方、且前述管狀部的外側之活塞機構;當內壓增加時以活塞機構的復原力將前述外周部壓下,當內壓減少時則以其抽吸力將前述外周部拉起。The semiconductor manufacturing device according to item 1 of the patent application range, wherein the aforementioned means is a piston mechanism provided above the outer peripheral portion and outside the tubular portion; when the internal pressure increases, the outer periphery is restored by the restoring force of the piston mechanism. When the internal pressure is reduced, the outer peripheral portion is pulled up by its suction force. 如申請專利範圍第6項記載之半導體製造裝置,其中前述活塞機構,係由從前述管狀部水平伸展之安裝部、前述外周部的上部的水平部、前述外周部的上部的垂直部、一端連接在前述安裝部的下面及前述管狀部而另一端連接在前述外周部的上部的垂直部之蓋部、與連接在前述蓋部與前述外周部的上部的水平部之間之彈簧所構成,與設在前述外周部的上部之孔相通而使前述活塞機構與前述第2抽吸孔連通。The semiconductor manufacturing device according to item 6 of the scope of patent application, wherein the piston mechanism is connected by a mounting portion extending horizontally from the tubular portion, a horizontal portion above the outer peripheral portion, a vertical portion above the outer peripheral portion, and one end. A cover portion which is a vertical portion connected to the lower portion of the mounting portion and the tubular portion and the other end of which is connected to the upper portion of the outer peripheral portion, and a spring portion connected between the cover portion and the horizontal portion of the upper portion of the outer peripheral portion, and A hole provided in an upper portion of the outer peripheral portion communicates with the piston mechanism and the second suction hole. 如申請專利範圍第1項記載之半導體製造裝置,其中進而具備將前述晶片由切割膠帶之下吸附、上推之上推單元,與安裝前述筒夾之拾取頭。The semiconductor manufacturing device according to item 1 of the scope of patent application, further comprising a unit for sucking the wafer from below the dicing tape, pushing up, and a pick-up head for mounting the collet. 如申請專利範圍第8項記載之半導體製造裝置,其中進而具備載置用前述拾取頭被拾取的晶片之中間載物台,與將被載置在前述中間載物台的晶片在基板或者在已經被接合的晶片之上進行接合之接合頭。The semiconductor manufacturing device according to item 8 of the scope of patent application, further comprising an intermediate stage on which the wafer picked up by the pickup head is placed, and a wafer to be placed on the intermediate stage is placed on a substrate or on a substrate. A bonding head for bonding on a bonded wafer. 如申請專利範圍第1項記載之半導體製造裝置,其中前述晶片進而在前述晶片與前述切割膠帶之間具備晶片貼膜(die attach film)。According to the semiconductor manufacturing apparatus described in claim 1 in the patent application scope, the wafer further includes a die attach film between the wafer and the dicing tape. 一種半導體裝置之製造方法,其特徵係具備:(a)保持具有晶片的切割膠帶之晶圓環之準備步驟,(b)前述基板之準備步驟,與(c)用前述上推單元將前述晶片上推並用前述筒夾將前述晶片拾取之步驟;前述(c)步驟係具備:(c1)吸附前述切割膠帶之步驟,(c2)在前述(c1)步驟後,將前述筒夾降下、吸附前述晶片之步驟,(c3)在前述(c2)步驟後,使前述上推單元的區塊(block)與前述筒夾升高之步驟,(c4)在前述(c3)步驟後,使前述上推單元的區塊與前述筒夾降下之步驟,與(c5)在前述(c4)步驟後,使前述筒夾升高之步驟。A method for manufacturing a semiconductor device, comprising: (a) a step of preparing a wafer ring for holding a dicing tape with a wafer, (b) a step of preparing the substrate, and (c) a step of pushing the wafer by the push-up unit. The step of pushing up and picking up the wafer with the collet; the step (c) includes: (c1) a step of adsorbing the dicing tape, (c2) after the step (c1), lowering the collet and adsorbing the aforementioned In the wafer step, (c3) the step of raising the block of the push-up unit and the collet after the step (c2), and (c4) after the step (c3), the push-up The block of the unit and the step of lowering the collet, and (c5) the step of raising the collet after the step (c4). 如申請專利範圍第11項記載之半導體裝置之製造方法,其中進而具備(d)將前述晶片在基板或者在已經被接合的晶片之上進行接合之步驟。The method for manufacturing a semiconductor device according to item 11 of the scope of patent application, further comprising (d) a step of bonding the wafer on a substrate or a wafer to be bonded. 如申請專利範圍第12項記載之半導體裝置之製造方法,其中前述(c)步驟係進而具有將前述已拾取的晶片載置在中間載物台之步驟;前述(d)步驟係進而具有從前述中間載物台拾取前述晶片之步驟。For example, the method for manufacturing a semiconductor device according to item 12 of the application, wherein the step (c) further includes a step of placing the picked-up wafer on an intermediate stage; the step (d) further includes a step from the aforementioned The intermediate stage picks up the aforementioned wafer.
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