1364086 九、發明說明：1364086 IX. Description of invention:
【發明所屬之技術領域】 本發明是關於一種固定/釋放輔助裝置，尤其是— 1王日白 圓檢測機台用固定/釋放輔助裝置、該檢測機台及方法。 【先前技術】 隨著科技業的進步’例如LED晶圓，厚度已由原本 的200 μπ1，逐漸變薄至15〇 μιη以下，遂令晶圓因製造過 程中的熱應力等張力因素，產生約5μηι的不平整趣曲。 而在目前習用測試過程中，多是將待測晶圓置放在承載裝 置的承載面上，將承載裝置通氣連接至一具真空幫浦，使 得承載面上的氣孔處產生負壓，吸附待測晶圓，並藉由上 方之點測裝置，導電接觸該晶圓中的個別晶粒，藉以致能 點亮各晶粒並感測其發光。 然而，上述翹曲現象將使得點測裝置無法正確導電接 觸至各晶粒高度’而接觸不良又將使檢測無法正確進行； 為使晶圓平整而解決上述問題’目前業界多以操作人員人 工施壓的方式’迫使晶圓貼緊於承载面；或增大承載裝置 所連接的真空幫浦抽吸力道，強迫晶圓被強力吸取至平貼 承载面。 丨二热确'田人 … —J J此四钩万迅刀不 均勾 '施加Μ力過快、待測晶圓本身的結構些許瑕疲產生 應力集中現象，待測晶圓因而破片。甚至在關閉真空幫浦 而讓晶圓回復翹曲型態時，晶圓會因為迅速恢復彎曲的形 狀而導致破1如此，不僅良率隨之下降，成本同步提高· 5 清理破片也會耽誤後續作業，使得產出效率明顯降低。 因此若能自動化施加壓力，使晶圓在不易碎裂情況 下，平坦被吸附固定於承載袭置之承載面上，不僅提升檢 測系，的可靠度，也顯著提高產出效率，更可降低製造成 本’實為最佳的解決方案。 【發明内容】 因此，本發明之一目的在提供一種利用中央較厚的挽 性物，在置放晶圓時逐步由中央壓平待測晶圓，使勉曲晶 圓逐步受力而貼平承載面，並受承載面氣孔之吸附而不易 碎裂的晶圓檢測機台用固定/釋放輔助裝置。 /本發明另—目的’在提供-種能敎吸附晶圓使其易 丈檢測之晶圓檢測機台用固定/釋放輔助裝置。 本發明之再-目的，在提供一種結構簡單並可充分自 動化而增加測試速度之晶圓檢測機台。 本發明之又-目的，在提供一種減少晶圓損壞機率、 提升產出良率之晶圓檢測機台 本發月之又另-目的，在提供一種可自動化作業、有 效提升檢測效率之晶圓檢測方法。 本發月之又再-目的，在提供_種避免無謂破片、有 效增加產出良率之晶圓檢測方法。 因此，本發明揭露一種晶圓檢測機台用固定/釋放輔 助裝置’其中該機台包含一組具有承載裝置之基座及一組 設置於該基座之測試裝置’該承載裝置具有一個供承載該 待測晶圓 ' 並形成有複數氣孔之承载面，並通氣連接至一 個排氣幫浦，該固定/釋放輔 中央部分及一個厚度低於該：3.-個包括-個 單元;及-纟離該承載裝。置2:邊^ -個使該撓性單元該中央部分與該=至及 待測晶圓、並形變至厚度實質 =抵愿至该 性單元之移動單元。 m置間移動該換 *有=用Γ助裝置之晶圓檢測機台，則…組 曰圓土座°亥承載裝置具有—個供承載該待測 =麵成有複數氣孔之㈣面，㈣氣連接至一個排 口一組設置於該基座之測試裝置；及-組設置於該 :座之固疋/釋放辅助裝置’包括一個具有一個中央部分 及一個厚度低於該中央部分的周邊部分之繞 組用以在遠離該承载裝置之—個預備位置，及—個使錢 t補中ί部分與該周邊部分被抵壓至該待測晶圓、並 形變至厚度實質相等的迫緊位置間移動該撓性單元之移 動單元。一組具有承載裝置之基座；一組設置於該基座之 測试裝置’該承載裝置具有一個供承載該待測晶圓、並形 成有複數氣孔之承載面，並通氣連接 -組固定/釋放辅助裝置，包括一個具有一個;央幫:= 一個厚度低於該中央部分的周邊部分之撓性單元；及—組 用以在遠離該承載裝置之一個預備位置，及一個使該撓性 早70該中央部分與該周邊部分被抵壓至該待測晶圓、並形 變至厚度實質相等的迫緊位置間移動該撓性單元之移動 單元。 1364086 ' 應'用上述機台進行晶圓檢測之方法，係由-具晶圓檢 ....測機台檢測該受測晶圓’其中該檢測機台包含-組設有承 : ㈣i、一組測試裝f及-組固定/釋放輔助裝置之基 f該承載裝置具有-個供承載該待測晶圓、並形成有複 數氣孔之承载面，並通氣連接至一個排氣幫浦；該固定/ 釋放輔助裝置包括-個具有—個中央部分及—個厚度低 於射央部分的周邊部分之撓性單元，及一組用以移動該 • 舰單元之移動單元，該方法包含下列步驟：a)以該排氣 十X承載面上複數氣孔施加負壓，並將該受測晶圓置 放於該承載面上；b)以該移動單元將該挽性單元由遠離該 Μ裝置之-個預備位置移動至使該撓性單元該中央部 刀被抵壓至1^待測晶圓；e)減緩該移動單元及該撓性單元 ' 下壓速度，直到該撓性單元該周邊部分被抵壓至該待測晶 圓，使s玄撓性單元形變至厚度實質相等的迫緊位置，迫使 該待測晶圓平貼於該承載面而受到該等氣孔負壓吸引，保 • 持貼附於該承載面；d)移動該移動單元與該撓性單元至容 許•亥測試裝置測試該待測晶圓之遠離該待測晶圓位置，以 該測試裝置測試該待測晶圓；e)停止該排氣幫浦提供至該 等氣孔之負壓，釋放該待測晶圓。 藉由移動單元的輔助，使撓性單元在下壓形變過程 中，先以中央部分逐漸壓迫待測晶圓中央部分，將原本已 . 經部分平貼於承载面的晶圓中央部分壓平，並帶動晶圓之 周邊部分逐漸接近承載面，減少其間的翹曲量；隨後逐步 下壓’讓整體翹曲待測晶圓能平貼於承載面上，受承載面 8 1364086 上氣孔之錢，使晶@]變得平整而易被正確點測 有效達成自動化檢測作業’更能減少晶圓損壞， 檢測效率與產出良率，更使作業自動化成為可能 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之較佳實施例的詳細說明中，將可清楚 的呈現。 '疋BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fixing/release assisting device, and more particularly to a fixing/release assisting device for a Wangribai round detecting machine, the detecting machine and method. [Prior Art] With the advancement of the technology industry, such as LED wafers, the thickness has been gradually reduced from the original 200 μπ1 to less than 15 μm, so that the wafer is produced by the tension factors such as thermal stress during the manufacturing process. 5μηι's unevenness. In the current practice test, the wafer to be tested is placed on the bearing surface of the carrying device, and the carrying device is ventilated to a vacuum pump, so that a negative pressure is generated at the air hole on the bearing surface, and the adsorption is performed. The wafer is measured and electrically contacted with individual dies in the wafer by means of a spotting device above, whereby the dies are illuminated and their luminescence is sensed. However, the above warping phenomenon will make the spotting device unable to properly contact the height of each die', and the poor contact will make the detection impossible. The above problem can be solved for the wafer to be flattened. The method of pressing 'forces the wafer against the bearing surface; or increases the vacuum pump suction force connected to the carrier to force the wafer to be strongly drawn to the flat bearing surface.丨二热确的田人... —J J This four hooks are not evenly hooked. 'The application of force is too fast, the structure of the wafer itself to be tested is slightly fatigued, and the stress concentration phenomenon, the wafer to be tested is fragmented. Even when the vacuum pump is turned off and the wafer is returned to the warped pattern, the wafer will be broken due to the rapid recovery of the curved shape. Not only the yield will decrease, but also the cost will increase. 5 Cleaning the fragments will also delay the follow-up. The operation makes the output efficiency significantly lower. Therefore, if the pressure can be automatically applied, the wafer can be adsorbed and fixed on the bearing surface of the load bearing under the condition that the wafer is not easily broken, which not only improves the reliability of the detection system, but also significantly improves the output efficiency and reduces the manufacturing. Cost ' is the best solution. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a thicker centrally-loaded material that gradually flattens the wafer to be tested from the center while placing the wafer, thereby squashing the wafer by gradual stress. A fixing/release aid for a wafer inspection machine that carries a surface and is adsorbed by the air holes of the bearing surface and is not easily broken. / The present invention is another object of providing a fixing/release assisting device for a wafer inspection machine which is capable of adsorbing a wafer and making it easy to detect. A further object of the present invention is to provide a wafer inspection machine that is simple in structure and sufficiently automated to increase the speed of testing. Another object of the present invention is to provide a wafer inspection machine that reduces the probability of wafer damage and improves the yield yield. The purpose of the present invention is to provide a wafer inspection that can automatically improve the detection efficiency. method. This month's re-purpose is to provide a wafer inspection method that avoids unnecessary fragmentation and effectively increases output yield. Therefore, the present invention discloses a fixing/release assisting device for a wafer inspection machine, wherein the machine includes a set of bases having a carrying device and a set of testing devices disposed on the base. The carrying device has a bearing for carrying The wafer to be tested is formed with a bearing surface of a plurality of air holes, and is ventilated to an exhaust pump, the fixed/release auxiliary central portion and a thickness lower than the: 3.- including one unit; Deviate from the carrying device. Setting 2: the side of the flexible unit causes the central portion and the = to and the wafer to be tested, and deformed to a substantial thickness = a mobile unit that is willing to the unit. Between the m-placement movements, the replacement of the wafer inspection machine with the aid device, the group of the earthen earth-bearing device has a (four) surface for carrying the plurality of vents to be tested, (4) a gas connection to a set of test devices disposed on the base; and a set of: the solid/release aid of the seat includes a central portion and a peripheral portion having a thickness lower than the central portion The windings are used at a pre-position away from the carrying device, and between the pressing portion where the peripheral portion is pressed against the wafer to be tested and deformed to substantially equal thickness. Moving the mobile unit of the flexure unit. a set of bases having a carrying device; a set of test devices disposed on the base; the carrying device has a bearing surface for carrying the wafer to be tested and forming a plurality of air holes, and the air connection-group fixing/ a release assisting device comprising: a central unit: a flexible unit having a thickness lower than a peripheral portion of the central portion; and a set for being at a preparatory position away from the carrying device, and an early setting of the flexibility 70. The central portion and the peripheral portion are pressed against the wafer to be tested and deformed to a moving position of the flexible unit between the forced positions of substantially equal thickness. 1364086 'The method of wafer inspection by the above machine is to test the wafer under test by the wafer inspection machine. The test machine includes - the group is provided with: (4) i, a set of test equipment f and - group fixing / releasing auxiliary device f - the carrying device has a bearing surface for carrying the wafer to be tested and formed with a plurality of air holes, and is vented to an exhaust pump; The fixing/release aid includes a flexible unit having a central portion and a peripheral portion having a thickness lower than the central portion, and a set of moving units for moving the marine unit, the method comprising the steps of: a) applying a negative pressure to the plurality of air holes on the exhaust X X bearing surface, and placing the test wafer on the bearing surface; b) using the mobile unit to move the tractable unit away from the Μ device The preparatory position is moved to cause the central portion of the flexible unit to be pressed against the wafer to be tested; e) to slow down the moving unit and the flexible unit's pressing speed until the peripheral portion of the flexible unit is Pressing against the wafer to be tested, causing the s-flexible unit to be deformed to substantially equal thickness Pressing the position, forcing the wafer to be tested to be flatly attached to the bearing surface and being attracted by the negative pressure of the air holes, and being attached to the bearing surface; d) moving the mobile unit and the flexible unit to allow The test device tests the position of the wafer to be tested away from the wafer to be tested, and tests the wafer to be tested with the test device; e) stops the negative pressure provided by the exhaust pump to the pores, and releases the crystal to be tested. circle. With the aid of the mobile unit, the flexible unit gradually presses the central portion of the wafer to be tested with the central portion during the depression process, and flattens the central portion of the wafer that has been partially pasted on the bearing surface, and Drive the peripheral part of the wafer to gradually approach the bearing surface, reduce the amount of warpage between them; then gradually press down 'to make the overall warpage of the wafer to be tested flat on the bearing surface, the money on the bearing surface 8 1364086, so that Crystal @] becomes flat and easy to be correctly spotted to achieve an automated inspection job', which can reduce wafer damage, detection efficiency and yield yield, and make job automation possible. [Embodiment] The foregoing and other aspects of the present invention The technical content, features, and utilities will be apparent from the following detailed description of the preferred embodiments. '疋
本發明如圖1及圖2所示，固釋放輔助裂置ι利 用一個中央料351明顯較周邊㈣353厚的中空球體 35。作為施壓之撓性單元，球體35在未作動前，隨一組移 動單元37停止於一個遠離承載裝置43的預備位置故於 圖6步驟61中，當待測晶圓3置放於承載裝置之承載 面430上後，將球體35移動至待測晶圓3上方逐漸下壓。 其中’待測晶圓3的趣曲並非輻射狀對稱，但—般因中央 部分351最低’在置放於承載面彻時即已接近平貼狀As shown in Figs. 1 and 2, the solid release assisted splitting uses a hollow sphere 35 having a central material 351 which is significantly thicker than the peripheral (four) 353. As the pressure-applied flexible unit, the ball 35 is stopped with a set of moving units 37 in a preparatory position away from the carrying device 43 before being actuated, so in step 61 of FIG. 6, when the wafer 3 to be tested is placed on the carrying device After the bearing surface 430 is mounted, the ball 35 is moved to the top of the wafer 3 to be tested and gradually pressed down. The 'intern of the wafer 3 to be tested is not symmetrical, but the lowest due to the central portion 351' is close to the flat shape when placed on the bearing surface.
’不僅能 同步提高 態；且此時承載面430上氣孔1()1已由通氣連接之排氣幫 浦41施加負壓β 因此步驟62如圖！至圖5所示，球體35之中央部分 351將優先抵壓至晶圓3的中央’當球體35隨移動單元 緩步下壓壓力將逐漸由晶圓3中央部分向外壓迫至稍離 開晶圓3中央的中介部位，迫使中介部位向承載面43〇貼 平。而中介部位被壓平，亦使得晶圓3之周邊部分353翹 曲被逐漸抑制，並隨同朝向承載面430下移。 步驟63則如圖！至圖5所示，驅動移動單元37再繼 1364086 續下移，迫使球體35的中央部分35 1高度縮減至約等於 周邊部分353，因此整個球體35將以均勻出力方式，對 晶圓3整體施壓，使晶圓3由翹曲變成完全平貼於承載面 430，並受承載面430上氣孔1〇1之負壓吸引，全面附著 固定於承載面430上’從而在後續過程順利受檢測，以克 服上述晶圓3厚度越來越薄所導致的不平整輕曲現象。當 然，此施壓過程中，移動單元之移動速度亦可較球體35 g 未接觸晶圓3前更緩慢。 為便於解說起見，在此定義移動單元下壓後，使球體 35中央部分351形變至與球體周邊部分353厚度實質相 等的位置為迫緊位置。另為避免操作人員或機械裝置所攜 • 帶靜電之瞬間放電（ESD，Electrostatic Discharge)造成過電 . 壓（E〇S，Electrical〇verstress)而破壞受測晶圓，亦可選擇 在待測aa圓3上置放一抗靜電件33，以防止ESD破壞， 而達到最佳的防護效果。 • 其後，於步驟64將移動單元與撓性單元共同移離待， 測晶圓，如圖1至圖5所示，由設置於基座1〇之測試裝 置45進行晶圓檢測，在本例巾，測試裝置45包括兩組壓 力導接組件453,及一組光學感測件451。每組壓力導接 - 組件453分別具有一根金屬探針，供機械式逐-點壓至待 . ㈣圓中的特定晶粒，供電氣接觸致能該受測晶粒，並由 一千感測件451接收文測晶粒所發之光而進行研判。當 然’如熟悉此技術領域人士所能輕易理解，依照目前技 術亦有部分晶粒的共同接地是位於晶圓背面，而受測面 1364086 僅存有單—電極，對於此縣構之相晶®，則可選擇承 載面為金屬材質的承载裝置，以承载面作為接地之用，使 上方之金屬探針及壓力導接組件則僅需一組。 至步驟65,當檢測完成後，重新如圓4所示將移動 單元(如圖！所示)及球體35移動至迫緊待測晶圓3的迫緊 位置，使得測畢之晶圓3係被球體35施力屋平。最後於 步驟66中’-方面停止排氣幫浦41繼續提供負壓至氣孔 1〇1 ’使晶圓之彈性回復力完全由撓性單元抵消。另方面 緩緩地將移動單元及球體35上移，逐步移動至承載裝置 43的預備位置，使得待測晶圓3是被限制成漸次由周邊 至中央彈性回復為原始赵曲狀態，從而避免晶圓3在快速 釋放的步驟中，因迅速回彈而損壞的風險。當然，若確認 該晶圓之結構強度足以承受急速回彈而不致破片，此部分 之步驟亦可省略而無礙於本案之實施。 _ 當然，如熟悉本技術領域者所能輕易理解’挽性單元 並非揭限於中空球體，如圖7本㈣二實_心^ 利用如海棉35,等實心撓性件，使其周邊部分如，的厚度 少於中央部分351，，並在最㈣平晶圓過程時，使中央部 分351，之厚度可實質等於周邊部分…，，即可符合本⑽ 需，對晶圓表面施壓以進行檢測作業。 惟以上所述者，僅為本發明之較佳實施例而已， 能以此限定本發明實施之範圍，即大凡依 ： 範圍及發明說明書内容所作之申明專禾 間早的荨效變化與修飾，皆 應仍屬本^明專利涵蓋之範圍内。 1364086 【圖式簡單說明】 圖1是本發明第一實施例之側視示意圖； 圖2〜4是本發明第一實施例球體下壓至平貼於晶圓作動 情形之側視示意圖； 圖5是本發明第一實施例之測試裝置示意圖； 圖6是本發明第一實施例之檢測方法流程示意圖；及 圖7是本發明第二實施例之側視示意圖。 【主要元件符號說明】 3.. .晶圓 33…抗靜電件 35’...海棉 41.. .排氣幫浦 45.. .測試裝置 351、351’…中央部分 430.. .承載面 453.. .壓力導接組件 1.. .固定/釋放輔助裝置 10…基座 35…球體 37…移動單元 43…承載裝置 101·.·氣孔 353、353’...周邊部分 451.. .光學感測件 12Not only can the synchronous state be improved; and at this time, the air hole 1 () 1 on the bearing surface 430 has been subjected to the negative pressure β by the ventilating connection of the exhaust pump 41, so that step 62 is as shown! As shown in FIG. 5, the central portion 351 of the ball 35 will preferentially press against the center of the wafer 3. When the ball 35 is slowly depressed with the moving unit, the pressure will gradually be pressed outward from the central portion of the wafer 3 to slightly away from the wafer. 3 The central intermediate part forces the intermediate part to be flattened to the bearing surface 43. The intermediate portion is flattened, so that the warpage of the peripheral portion 353 of the wafer 3 is gradually suppressed and moves down toward the bearing surface 430. Step 63 is as shown! As shown in FIG. 5, the driving and moving unit 37 continues to move down 1364084, forcing the central portion 35 1 of the ball 35 to be reduced to approximately equal to the peripheral portion 353, so that the entire ball 35 will be applied to the wafer 3 in a uniform output manner. Pressing, the wafer 3 is changed from warping to completely flattening on the bearing surface 430, and is attracted by the negative pressure of the air hole 1〇1 on the bearing surface 430, and is fully attached and fixed on the bearing surface 430', so that it is smoothly detected in the subsequent process. In order to overcome the unevenness and thinness caused by the thinning of the thickness of the wafer 3 described above. Of course, during this pressing process, the moving speed of the moving unit can also be slower than before the ball 35 g is not in contact with the wafer 3. For ease of explanation, after the mobile unit is depressed, the central portion 351 of the ball 35 is deformed to a position substantially equal to the thickness of the peripheral portion 353 of the sphere as a pressing position. In addition, in order to avoid the electric shock caused by the electrostatic discharge (ESD, Electrostatic Discharge) carried by the operator or the mechanical device, the pressure (E〇S, Electrical 〇verstress) may damage the tested wafer, or may be selected in the test aa. An antistatic member 33 is placed on the circle 3 to prevent ESD damage and achieve the best protection effect. • Thereafter, in step 64, the mobile unit and the flexible unit are moved away from the wafer to be tested, as shown in FIGS. 1 to 5, and the wafer is detected by the test device 45 disposed on the susceptor 1 . For example, the test device 45 includes two sets of pressure guiding assemblies 453 and a set of optical sensing members 451. Each set of pressure guides - component 453 has a metal probe for mechanical point-by-point pressure to be treated. (4) The specific grain in the circle, the contact of the supply gas enables the measured die, and by a thousand senses The measuring piece 451 receives the light emitted by the document and performs the judgment. Of course, as can be easily understood by those skilled in the art, according to the current technology, the common ground of some of the crystal grains is located on the back side of the wafer, and the surface to be tested 1364084 has only a single electrode, and the phase crystal of the county is , the bearing surface of the metal bearing material can be selected, and the bearing surface is used as a grounding ground, so that only one set of the metal probe and the pressure guiding component above is needed. Go to step 65, when the detection is completed, re-move the mobile unit (as shown in Figure!) and the sphere 35 to the pressing position of the wafer 3 to be tested as shown in the circle 4, so that the wafer 3 is tested. The ball 35 is applied to the roof. Finally, in step 66, the exhaust pump 41 is stopped to continue to provide a negative pressure to the air holes 1〇1' so that the elastic restoring force of the wafer is completely offset by the flexible unit. On the other hand, the moving unit and the ball 35 are gradually moved up, and gradually moved to the preparatory position of the carrying device 43 so that the wafer 3 to be tested is restricted to gradually return from the periphery to the center to return to the original state of the curved state, thereby avoiding the crystal. The risk of damage to the circle 3 in the rapid release step due to rapid rebound. Of course, if it is confirmed that the structural strength of the wafer is sufficient to withstand rapid rebound without fragmentation, the steps of this portion can be omitted without hindering the implementation of the present case. _ Of course, as is familiar to those skilled in the art, it can be easily understood that the 'ductive unit is not limited to a hollow sphere, as shown in Fig. 7 (four) two real _ heart ^ using a solid flexible member such as sponge 35, such as its peripheral parts such as The thickness of the film is less than the central portion 351, and in the most (four) flat wafer process, the thickness of the central portion 351 can be substantially equal to the peripheral portion, so that the wafer surface can be pressed to perform the (10) requirements. Test the job. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention can be limited thereto, that is, the scope and the contents of the description of the invention are used to determine the early changes and modifications of the special effects. All should remain within the scope of this patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side elevational view of a first embodiment of the present invention; FIGS. 2 to 4 are side views of a first embodiment of the present invention in which a sphere is pressed down to a wafer for actuation; FIG. FIG. 6 is a schematic flow chart of a detecting method according to a first embodiment of the present invention; and FIG. 7 is a side view showing a second embodiment of the present invention. [Main component symbol description] 3.. Wafer 33... Antistatic member 35'... Sponge 41.. Exhaust pump 45.. Test device 351, 351'... Central portion 430.. Face 453.. Pressure connection assembly 1. Fixing/release aid 10... Base 35... Ball 37... Moving unit 43... Carrying device 101·. Air vent 353, 353'... Peripheral part 451.. Optical sensing member 12