TW201009973A - A needle tracking inspection device, a detecting device and a needle tracking inspection method - Google Patents

A needle tracking inspection device, a detecting device and a needle tracking inspection method Download PDF

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TW201009973A
TW201009973A TW098117478A TW98117478A TW201009973A TW 201009973 A TW201009973 A TW 201009973A TW 098117478 A TW098117478 A TW 098117478A TW 98117478 A TW98117478 A TW 98117478A TW 201009973 A TW201009973 A TW 201009973A
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TWI505384B (en
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Yasutoshi Umehara
Makoto Tsukishima
Isao Kouno
Satoshi Sano
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95684—Patterns showing highly reflecting parts, e.g. metallic elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Biochemistry (AREA)
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  • Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
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Abstract

The invention provides a needle tracking inspection device, a detecting device with the device and a needle tracking inspection method that can detect protrusion condition of a base layer of an electrode mat to a cardinal plate after detection automatically with high precision, wherein the needle tracking inspection device comprises the following procedures: obtain a R ingredient data (D2), a G ingredient data (D3) and a B ingredient data (D4), then a RGB ingredient obtaining part (50) of the B ingredient data (D4) is selected according to the difference of the reflection index of material quality of an electrode mat (2) and that of a basal layer (6); and to the B ingredient data (D4), in order to obtain image of the basal layer (6) distinguished from the electrode mat (2), a set grey level and a B ingredient histogram obtaining part (52) as relation data having pixels of the grey level, then according to the obtained histogram judge the existence of protrusion of the basal layer (6) in the needle tracking.

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201009973 六、發明說明： 【發明所屬之技術領域】 本發明，例如係有關於針對使用探針而進行了檢查後 之基板，來將電極墊片之基底層的露出之有無等的露出狀 況自動地檢測出來之針跡檢査裝置、及針跡檢査方法、以 及具備有針跡檢査裝置之探針裝置、還有記憶有針跡檢查 方法之實行程式的記憶媒體。 【先前技術】 於先前技術中，作爲對於被形成在半導體之基板上的 1C晶片之電性特性作測定的裝置，係使用有探針裝置。探 針裝置’係爲具備有將基板作載置且可在3維方向上作自 由移動之平台、以及探針卡，並經由進行使探針卡之探針 與基板上之被連接於配線圖案的電極墊片作接觸之所謂的 探針測試’而進行電性測定之裝置。 # 作爲探頭，一般係使用探針，並爲了將電極墊片之表 面的自然氧化膜作切削，而設爲施加有過驅動（指在使探 針與電極墊片相接觸後，而更進而使電極墊片上升一事） 。而’當探頭針係爲橫針的情況時，在施加過驅動時，由 於探針係橫向滑動，因此，係形成有縱長之針跡，就算是 在探針爲垂直針的情況時，亦會有爲了確保確實的接觸， 而使基板平台作橫向移動，並形成有縱長之針跡的情況。 故而’在探針測試後，係將電極墊片之針跡檢測出來 ’並對於在電極墊片上是否存在有針跡一事作掌握，而當 -5- 201009973 不存在有針跡時，則判斷其係爲測定不良。進而，當探針 較預定而更深地刺入電極墊片中並使電極墊片之基底層露 出的情況時，則由於裝置之信賴性係降低，因此，對於該 些之電極墊片，係有必要作爲不良來處理，又，若是發生 有此種深挖掘，則基底層之切削殘渣會附著在探頭針上， 並成爲污染的重要原因。故而，在針跡之檢測中，係有必 要迅速地檢測出露出的有無。 關於上述電極墊片之針跡檢查，係在將基板從探針裝 _ 置而搬出後，由作業者對於該當基板而使用金屬顯微鏡等 來進行。然而，從一枚的基板，係被製造出有多數的（例 如1 000個）晶片，而在1個的晶片上，例如係被形成有 10個的電極墊片，因此，進行針跡檢查之電極墊片的數量 ，係成爲龐大的數量。因此在先前技術之針跡檢查作業中 ，於檢査中係耗費非常長的時間，又，係有必要準備金屬 顯微鏡。 相對於此種問題，係存在有：經由CCD攝像機等來 @ 對晶圓W作攝像，並在控制部處對該攝像資料作解析， 而進行針跡檢查的針跡檢查裝置。例如，在專利文獻1中 ，係記載有一種針跡檢測測定裝置，其係對探針測試後之 基板作攝像，並將在半導體晶片處之探針的接觸痕跡作爲 2維畫像來取得，再對此2維畫像進行解析而將針跡檢測 出來，同時，對於在針跡處之顏色的濃度値之平均値作調 查，並將此平均値，和具備有與預先所被制訂之平均値相 對應的孔洞之深度的資料作比較，藉由此，而能夠對針跡 -6- 201009973 之深度作判定。 又，在專利文獻2中，係記載有一種針跡檢測裝置， 其係對基板作攝像並取得基板上面之畫像資料，再從畫像 資料來取得電極墊片區域之資料，並經由針痕臨限値決定 部來求取出電極墊片區域之像素値的直方圖，同時，從直 方圖來求取出針痕區域取得用之臨限値，並根據此臨限値 ，來將電極墊片區域二値化，並將針跡之位置正確地檢測 φ 出來。又，在專利文獻3中，係記載有一種針跡檢測裝置 ，其係對基板作攝像並取得基板上面之畫像資料，再從畫 像資料來取得電極墊片區域之資料，並經由針痕臨限値決 定部來求取出電極墊片區域之像素値的直方圖，同時，求 取出針痕區域取得用之臨限値，並將電極墊片區域分割成 複數之區域，再根據於每一區域中所求取出之臨限値，來 對個別之臨限値作設定，並將針跡之位置正確地檢測出來 〇 • 然而，在上述之各裝置中，作爲攝像手段，由於係使 用單色攝像機，因此，例如於圖22中所示一般，若是對 基板作攝像，則係將電極墊片1〇〇之資料作爲單色畫像而 取得。此時，在電極墊片100之中央處，係被形成有橢圓 形之針跡110，於其中央部處，經由探針之將電極墊片 100刺破一事，基底之銅係露出，並形成露出區域111， 又，由於探針係從一個方向而傾斜地穿刺，因此，在針跡 110之一端側處，係被形成有堆積成弧狀之電極墊片100 的切削屑，並被形成有該切削屑之陰影部112。 201009973 而’當將此畫像作二値化並進行判定的情況時，灰階 準位爲高之露出區域111和切削屑之陰影部112以及在針 跡110處之邊緣部110a的陰影部係變黑，而其他之區域 係變白。因此’當利用先前技術之各裝置而對露出區域 1 1 1作判定的情況時，如圖23中所示一般，會從圖23 ( a )之單色畫像而取得圖23(b)中所示之二値化畫像，而 無法對於切削屑之陰影部112與露出區域111作判別。故 而，會有將露出區域111誤辨識爲切削屑之陰影部112並 將被形成有露出區域111之晶片判定爲良品、或是相反的 將切削屑之陰影部112誤辨識爲露出區域111並將良品之 晶片判定爲不良品的問題，藉由控制部來判別在電極墊片 1〇〇處是否被形成有露出區域111 一事，係爲困難。 〔專利文獻1〕日本特開2 00 3-6 8813號公報（段落號 碼 0044〜0058) 〔專利文獻2〕日本特開2006-190974號公報（段落 號碼0030〜0048 ) 〔專利文獻3〕日本特開2007-114073號公報（段落 號碼0035〜0046 ) 【發明內容】 〔發明所欲解決之課題〕 本發明，係爲有鑑於此種事態而進行者，其目的，係 在於提供一種：針對使用探針而進行了檢查後之基板，而 能夠自動地且高精確度地來檢測出電極墊片之基底層的露 -8- 201009973 出之有無等的露出狀態之針跡檢查裝置、和具備有該裝置 之探針裝置、和針跡檢查方法，以及記憶有該檢查方法之 實行程式的記憶媒體。 〔用以解決課題之手段〕 本發明之針跡檢查裝置，係爲在使探針接觸被檢查基 板上之電極墊片並進行了電性測定後，對被形成在前述電 Φ 極墊片上之針跡作攝像，並對於電極墊片之基底層的露出 之有無作檢查的針跡檢查裝置，其特徵爲，具備有：取得 從身爲色彩成分之R成分、G成分以及B成分中而因應於 電極墊片之材質與基底層之材質間的反射率之差所選擇了 的色彩成分之畫像資料之手段；和從藉由此手段所取得之 畫像資料，而求取出爲了和電極墊片作區別地來取得基底 層之畫像而設定之灰階準位、和具備有此灰階準位之像素 數’其兩者間的關係資料之手段；和根據藉由此手段所求 # 取出之關係資料，來對於在針跡處之基底層的露出之有無 作判定之手段。 又’係具備有以下之特徵：前述取得被選擇了的色彩 成分之畫像資料之手段，係具備有下述手段中之任一者： 將包含有R成分、G成分以及B成分之色彩成分的畫像作 取得之彩色攝像機、或是僅取得所選擇了的色彩成分之攝 像機'或者是僅照射被選擇了的色彩成分之光之照射手段 〇 又’係更進而具備有：藉由根據前述被選擇了的色彩 -9- 201009973 成分之畫像資料所設定之灰階準位，來對該當畫像資料進 行二値化處理，而取得用以進行基底膜露出區域之檢測的 二値化畫像資料之手段，前述所設定之灰階準位與像素數 間之關係資料，係爲此二値化畫像資料。前述所設定之灰 階準位，係爲根據前述被選擇了的色彩成分之畫像資料， 而作成對於在預先所設定之範圍內的灰階準位與像素數間 之關係作表現的直方圖，並根據此直方圖而作設定者。當 電極墊片之材質係爲鋁，而基底層之材質係爲銅的情況時 ，被作了選擇的色彩成分，係以B成分爲理想。 又，係具備有：由在R成分、G成分以及B成分中之 將前述被選擇了的色彩成分作了除去後者之中，來取得因 應於電極墊片之切削屑之陰影與基底層之材質間的反射率 之差異所選擇了的色彩成分之畫像資料，並將對此畫像資 料進行了二値化之二値化畫像資料作爲遮罩資料，來對於 用以進行基底膜露出區域之檢測的二値化畫像資料，而進 行用以將對應於電極墊片之切削屑之陰影的像素作除去之 遮罩處理之手段。當電極墊片之材質係爲鋁，而基底層之 材質係爲銅的情況時，爲了遮罩資料而被作了選擇的色彩 成分，係以R成分爲理想。進而’當基底層之材質係爲銅 的情況時，爲了用以進行前述基底層露出區域之檢測的二 値化畫像資料所被選擇了的色彩成分’係以B成分爲理想 〇 又，將被選擇了的色彩成分之畫像資料作取得之手段 ，係構成爲：取得由在R成分、G成分以及B成分中之將 -10- 201009973 前述被選擇了的色彩成分作了除去後者之中所選擇了的色 彩成分之畫像資料，並從此畫像資料中而將對應於針跡區 域之畫像資料切出，再根據此切出了的畫像資料，來進行 後續之處理。又’當電極墊片之材質係爲鋁，基底層之材 質係爲銅的情況峙，爲了對於針跡區域而將畫像資料切出 所被選擇了的色彩成分，係以G成分爲理想。又，本發明 之探針裝置，係爲將基板載置於探針卡與載置台上，並使 φ 探針卡之探針與基板上之晶片的電極墊片相接觸，而進行 晶片之電性測定的探針裝置，其特徵爲：具備有上述之各 針跡檢查裝置β 本發明之針跡檢查方法，係在使探針接觸被檢査基板 上之電極墊片並進行了電性測定後，對被形成在前述電極 墊片上之針跡作攝像，並對於電極墊片之基底層的露出之 有無作檢查的針跡檢查方法，其特徵爲，具備有：取得從 身爲色彩成分之R成分、G成分以及Β成分中而因應於電 • 極墊片之材質與基底層之材質間的反射率之差所選擇了的 色彩成分之畫像資料之工程；和對於藉由此工程所取得之 畫像資料，而求取出爲了與電極墊片之材質作區別地取得 基底層之材質的畫像而設定之灰階準位、和具備有此灰階 準位之像素數，其兩者間的關係資料之工程；和根據藉由 此工程所求取出之關係資料，來對於在針跡處之基底層的 露出之有無作判定之工程。 又，係具備有以下特徵：更進而具備有：根據前述被 選擇了的色彩成分之畫像資料，而設定前述灰階準位’同 •11 - 201009973 時，對該當畫像資料進行二値化處理，而取得用以進行基 底膜露出區域之檢測的二値化畫像資料之工程，前述關係 資料，係爲此二値化畫像資料。又，前述灰階準位，係爲 根據前述被選擇了的色彩成分之畫像資料，而作成對於在 預先所設定之範圍內的灰階準位與像素數間之關係作表現 的直方圖，並根據此直方圖而作設定者。又，電極墊片之 材質係爲鋁，而基底層之材質係爲銅，被作了選擇的色彩 成分，係以B成分爲理想。 又，係具備有以下特徵：具備有：由在R成分、G成 分以及B成分中之將前述被選擇了的色彩成分作了除去後 者之中，來取得因應於電極墊片之切削屑之陰影與基底層 之材質間的反射率之差異所選擇了的色彩成分之畫像資料 ，並將對此畫像資料進行了二値化之二値化畫像資料作爲 遮罩資料，來對於用以進行基底膜露出區域之檢測的二値 化畫像資料，而進行用以將對應於電極墊片之切削屑之陰 影的像素作除去之遮罩處理之工程。而，亦可爲以下之構 成：電極墊片之材質係爲鋁，基底層之材質係爲銅，爲了 遮罩資料而被作了選擇的色彩成分，係爲R成分。進而， 較理想，基底層之材質係爲銅，爲了用以進行前述基底層 露出區域之檢測的二値化畫像所被選擇了的色彩成分，係 爲B成分。 又，將因應於前述電極墊片之材質與基底層之材質間 的反射率之差所被選擇了的色彩成分之畫像資料作取得之 工程，係包含有：取得由在R成分、G成分以及B成分中 201009973 之將前述被選擇了的色彩成分作了除去後者之中所選擇了 的色彩成分之畫像資料，並從此畫像資料中而將對應於針 跡區域之畫像資料切出，再根據此切出了的畫像資料，來 進行後續之處理。而，電極墊片之材質係爲鋁，基底層之 材質係爲銅，爲了對於針跡區域而將畫像資料切出所被選 擇了的色彩成分，係爲G成分。 本發明之記億媒體，係爲儲存有在針跡檢查裝置中所 φ 被使用之電腦程式的記億媒體，該針跡檢查裝置，係在使 探針接觸被檢查基板上之電極墊片並進行了電性測定後， 對被形成在前述電極墊片上之針跡作攝像，並對於電極墊 片之基底層的露出之有無作檢査，該記憶媒體，其特徵爲 :前述電腦程式，係以實行上述各針跡檢査方法的方式， 而被構成步驟群。 〔發明效果〕 # 若藉由本發明，則係在進行針跡之檢查時，取得身爲 彩色資料之畫像資料，並將從畫像資料中所抽出之R成分 資料、G成分資料、B成分資料中，電極墊片之材質的光 之相對反射率與基底層之材質的光之相對反射率間的差成 爲最大之成分資料，作爲基底層露出之判定用資料而選擇 。而後’將針跡區域切出，並產生使灰階準位與像素數之 間有所關連的資料，再根據對應於基底層之灰階準位的範 圍’來由該資料而對於在針跡處之基底層的露出之有無作 判定。故而’能夠對於深挖掘而自動且迅速地以良好精確 -13- 201009973 度來確實地檢測出來，且亦能夠將作業員之負擔大幅度的 減輕。又，由於係能夠在探針裝置內來進行針跡的檢査， 而不需要如同先前技術一般地進行作業員所致之將基板W 搬送至金屬顯微鏡的作業區域內之作業，因此，係能夠更 進而對於探針之異常或是過驅動的異常等迅速地作掌握。 【實施方式】 〔第1實施形態〕 _ 圖1，係爲對於被組入有本發明之實施形態的針跡檢 査裝置之探針裝置作展示的圖。此探針裝置，係具備有底 板20，在此底板20之上，係將第1平台21以能夠在平行 延伸於X方向上之第1導引軌21a上作移動的方式而被支 持之狀態下來作積載，並經由與此第1平台21作軸通之 未圖示的滾珠螺桿與馬達，而成爲能夠朝向圖示之X方向 來移動。又’在第1平台21處，係與此第1平台21同態 樣地’而將第2平台22以能夠在與X以及Z方向相正交 φ 之未圖示的Y方向上作移動的方式來作積載，在第2平台 22上，係被積載有能夠藉由未圖示之馬達而在圖示z方 向上作移動之第3平台23。 在第3平台23之移動體處，係具備有將Z軸作爲旋 轉中心而能夠作微量的自由旋轉（可在Θ方向上自由地作 微少量、例如左右各1度之移動）之身爲載置台的吸盤頂 部24。故而，在此探針裝置中，將第1、第2、第3平台 21、22、23以及吸盤頂部24作爲驅動部，而成爲能夠將 -14- 201009973 晶圓W在Χ、Υ、Ζ、0方向上作移動。 又，在吸盤頂部24之上方，係在相當於探針裝置之 外裝體的頂部之頭部平板30處，經由插入環31而被配設 有探針卡32。探針卡32，係於上面側處，具備有未圖示 之被電性連接於測試頭處的電極群，於下面側處，被與該 當電極群分別作電性連接之探針（例如朝向斜下方延伸之 由金屬線所成的探針33)，係對應於晶片1之電極墊片2 (參考後述之圖2)的配列而被設置。另外，作爲探針33 ，係可爲相對於晶圓 W之表面而垂直地延伸之垂直針（ 線材探針），亦可爲被形成在可撓曲之薄膜上的金突塊電 極等。 在第3平台23處，係被設置有固定板23a，在此固定 板23 a處，係被積載有下攝像機70，該下攝像機70,係 將用以將探針33之針尖擴大拍攝之高倍率的光學系70a 與CCD攝像機70b作組合所構成。又，在固定板23a處 ，係以相鄰接於下攝像機70的方式，而被積載有用以對 於探針33之配列而涵蓋廣範圍地作攝影之低倍率攝像機 71，並被設置有藉由進退機構26而能夠在相對於下攝像 機70之合焦面而與光軸相交叉的方向上作進退之目標物 27 » 在吸盤頂部24與探針卡32之間的區域處，與下攝像 機70爲相同構成之上攝像機（攝像手段）72,係被積載 於可沿著未圖示之導引構件而自由移動地被支持之攝像機 搬送部34處，目標物27，係以能夠藉由下攝像機70以及 -15- 201009973 上攝像機72來作畫像辨識的方式而被構成，例如，係在 透明之玻璃板上，被形成有對位用之被攝體。又，在探針 裝置之外裝體上，係被設置有當經由上攝像機72來作晶 圓W作攝像時而對晶圓w作照明的例如由藍色發光二極 體所成之照明手段28。在本實施形態中，在上攝影機72 在對晶圓W作攝像時，係使用能夠將晶圓W之攝像資料 D1作爲具備有R、G、B之各成分的彩色資料而作取得之 彩色攝像機。 φ 又，在探針裝置處，係被設置有用以對上述各構件之 驅動等作控制的控制部4，並具備有CPU40、ROM ( Read Only Memory) 41、RAM ( Random Access Memory ) 42、 輸入部43、畫面等之顯示部44、探針探查用程式45、針 跡檢査用程式46等，此些之各裝置，係以能夠經由匯流 排47來進行資料或命令之授受的形態而被作連接。而， 此控制部4，係經由被連接於探針裝置之控制器與被連接 於控制器之個人電腦所構成。探針探查用程式45,係爲用 @ 以對探針裝置作控制並進行探針測試之命令群，並對於第 1〜第3平台21〜23以及吸盤頂部24作驅動控制，來控 制被載置之晶圓W的位置，並進行探針測試。 針跡檢查用程式46，係爲用以對經由上攝像機72所 取得之晶圓的攝像資料進行處理，並對於探針測試後之電 極墊片2的針跡進行檢測檢査之命令群。在針跡檢查用程 式46中，係具備有：與本發明之取得因應於電極墊片之 材質與基底層之材質間的反射率之差所選擇了的色彩成分 -16- 201009973 的畫像資料之手段相對應的RGB成分取得部50;和與 發明之求取出所設定了的灰階準位與具備有此灰階準位 像素數間的關係資料之手段相對應的針跡區域抽出部51 和包含有本發明之對於在針跡處之基底層的露出之有無 判定之手段的B成分直方圖取得部52;和與本發明之 得用以進行基底膜露出區域之檢測的二値化畫像資料之 段相對應的B成分二値化部53;和與本發明之進行遮 φ 處理之手段相對應的遮罩處理部54。RGB成分取得部 ，係爲從攝像資料而將R、G、B各成分之資料抽出， 取得R成分之灰階資料、G成分之灰階資料、B成分之 階資料的命令群。針跡區域抽出部51，係爲對G成分 灰階資料作處理並抽出針跡區域之命令群。B成分直方 取得部52，係爲對B成分之灰階資料作處理，並對電 墊片2處之基底層的露出區域之有無作檢査的命令群。 成分二値化處理部53，係將B成分之灰階資料二値化 • 並將露出區域之位置檢測出來的命令群。遮罩處理部54 係爲將R成分之灰階資料作二値化並取得對應於電極墊 2之切削屑的遮罩，再進行遮罩處理，而對針跡之位置 特定之命令群。而，在本實施形態中，係藉由此針跡檢 用程式46和上攝像機72以及照明手段28，而構成針跡 查裝置。 接著，針對上述實施形態之作用作說明。首先，依 探針探查用程式45，來進行對於身爲被檢査基板之晶 W的探針測試。於圖2、3中，展示此晶圓W之晶片（[Technical Field] The present invention relates to, for example, a substrate that has been inspected using a probe, and automatically exposes an exposed state of the underlying layer of the electrode pad. The detected stitch inspection device, the stitch inspection method, the probe device including the stitch inspection device, and the memory medium in which the execution program of the stitch inspection method is stored. [Prior Art] In the prior art, as a device for measuring the electrical characteristics of a 1C wafer formed on a substrate of a semiconductor, a probe device was used. The probe device is provided with a platform for placing the substrate and being movable in the three-dimensional direction, and a probe card, and the probe of the probe card and the substrate are connected to the wiring pattern. The electrode pad is used as a device for conducting a so-called probe test for contact. # As a probe, a probe is generally used, and in order to cut the natural oxide film on the surface of the electrode pad, an overdrive is applied (refer to the contact between the probe and the electrode pad, and further The electrode gasket rises). And when the probe needle is a horizontal needle, when the overdrive is applied, since the probe slides laterally, a longitudinal stitch is formed, even when the probe is a vertical needle. There is a case where the substrate platform is laterally moved in order to ensure a sure contact, and a longitudinal stitch is formed. Therefore, 'after the probe test, the stitches of the electrode pads are detected' and the presence of stitches on the electrode pads is grasped, and when there is no stitch on -5 - 201009973, then it is judged It is a poor measurement. Further, when the probe penetrates the electrode pad deeper than the predetermined one and exposes the base layer of the electrode pad, since the reliability of the device is lowered, the electrode pad is attached to the electrode pad. It is necessary to treat it as a defect, and if such deep excavation occurs, the cutting residue of the base layer adheres to the probe needle and becomes an important cause of contamination. Therefore, in the detection of stitches, it is necessary to quickly detect the presence or absence of exposure. The stitch inspection of the electrode pad is carried out by the operator using a metal microscope or the like after the substrate is carried out from the probe. However, a plurality of (for example, 1 000) wafers are manufactured from one substrate, and 10 electrode pads are formed on one wafer, for example, so that stitch inspection is performed. The number of electrode pads is a huge amount. Therefore, in the prior art stitch inspection work, it takes a very long time in the inspection, and it is necessary to prepare a metal microscope. In response to such a problem, there is a stitch inspection device that performs imaging of a wafer W by a CCD camera or the like and analyzes the image data at a control unit. For example, Patent Document 1 describes a stitch detecting and measuring device that images a substrate after a probe test and acquires a contact mark of a probe at a semiconductor wafer as a two-dimensional image. The two-dimensional image is analyzed to detect the stitches, and at the same time, the average concentration of the color at the stitches is investigated, and the average is compared with the average The data of the depth of the corresponding hole is compared, whereby the depth of the stitch -6-201009973 can be determined. Further, Patent Document 2 describes a stitch detecting device that captures a substrate and acquires image data on the substrate, and obtains data of the electrode pad region from the image data, and passes the needle mark. The 値 determining unit seeks to extract the histogram of the pixel 电极 of the electrode pad region, and at the same time, obtains the threshold 取得 for obtaining the needle mark region from the histogram, and according to the threshold 値, the electrode pad region is 値And the position of the stitch is correctly detected φ out. Further, Patent Document 3 describes a stitch detecting device that captures a substrate and acquires image data on the substrate, and obtains data of the electrode pad region from the image data, and passes the needle mark. The determination unit seeks to extract the histogram of the pixel 値 of the electrode pad region, and at the same time, obtains the threshold 取得 for obtaining the needle mark region, and divides the electrode pad region into a plurality of regions, and then according to each region The desired threshold is taken to set the individual threshold and the position of the stitch is correctly detected. However, in each of the above devices, as a camera, a monochrome camera is used. Therefore, for example, as shown in FIG. 22, in general, when the substrate is imaged, the information of the electrode pad 1 is obtained as a monochrome image. At this time, at the center of the electrode pad 100, an elliptical stitch 110 is formed, and at the central portion thereof, the electrode pad 100 is pierced through the probe, and the copper of the base is exposed and formed. In the exposed area 111, since the probe is punctured obliquely from one direction, at one end side of the stitch 110, chips which are formed by the electrode pads 100 stacked in an arc shape are formed and formed. The shadow portion 112 of the chip. 201009973 and 'When the image is binarized and judged, the gray scale level is the high exposed area 111 and the shadow portion 112 of the chip and the shadow portion of the edge portion 110a at the stitch 110 Black, while other areas are white. Therefore, when the case where the exposed area 1 1 1 is determined by each device of the prior art, as shown in FIG. 23, the monochrome image of FIG. 23(a) is obtained as shown in FIG. 23(b). The two images are shown, and the shadow portion 112 and the exposed region 111 of the chip cannot be discriminated. Therefore, the exposed portion 111 may be mistakenly recognized as the shadow portion 112 of the chip and the wafer on which the exposed region 111 is formed may be determined as a good product, or the shadow portion 112 of the chip may be mistakenly recognized as the exposed region 111 and The wafer of the good product is judged to be a defective product, and it is difficult for the control unit to determine whether or not the exposed region 111 is formed at the electrode pad 1〇〇. [Patent Document 1] Japanese Patent Laid-Open Publication No. JP-A No. 2000-190974 (Patent No. 2006-190974) (Patent No. 0030 to 0048) [Patent Document 3] SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The present invention has been made in view of such a situation, and an object thereof is to provide a method for using A stitch inspection device capable of detecting the presence or absence of the exposed layer of the underlayer of the electrode pad, which is automatically and highly accurately, and which is provided with the substrate A probe device of the device, a stitch inspection method, and a memory medium in which the program of the inspection method is stored. [Means for Solving the Problem] The stitch inspection device of the present invention is formed on the electric Φ-pole pad after the probe is brought into contact with the electrode pad on the substrate to be inspected and electrically measured. A stitch inspection device for inspecting the presence or absence of the exposure of the base layer of the electrode pad, wherein the stitching inspection device is configured to obtain the R component, the G component, and the B component from the color component. The means for selecting the image data of the color component according to the difference between the reflectance between the material of the electrode pad and the material of the base layer; and the image data obtained by the means for obtaining the electrode pad a means for obtaining a relationship between the gray scale level set by the image of the base layer and the number of pixels having the gray scale level, and the data obtained by the method; Relational data to determine the presence or absence of the presence of the basal layer at the stitching. Further, the method of obtaining the image data of the selected color component includes any one of the following means: a color component including the R component, the G component, and the B component The color camera that the image is obtained, or the camera that only obtains the selected color component, or the illumination device that only illuminates the selected color component, and further includes: by being selected according to the foregoing Color -9- 201009973 The grayscale level set by the image data of the component is used to perform the binarization process on the image data, and the means for obtaining the image of the image of the exposed area of the basement film is obtained. The relationship between the gray scale level and the number of pixels set in the foregoing is the second embodiment of the image data. The gray scale level set as described above is a histogram for expressing the relationship between the gray scale level and the number of pixels in a range set in advance according to the image data of the selected color component. And set it according to this histogram. When the material of the electrode pad is aluminum and the material of the base layer is copper, the color component selected is preferably B component. Further, the color component selected from the R component, the G component, and the B component is removed from the latter, and the material of the shadow and the base layer corresponding to the chip of the electrode pad is obtained. The image data of the color component selected by the difference in reflectance between the two, and the image data of the image data of the image is used as a mask material for detecting the exposed area of the base film. The masking process for removing the pixels corresponding to the shadows of the chips of the electrode pads is performed by dimming the image data. When the material of the electrode pad is aluminum and the material of the base layer is copper, the color component selected for masking the material is preferably R component. Further, when the material of the underlayer is copper, the color component selected for the binary image data for detecting the exposed region of the underlayer is ideally based on the B component. The means for obtaining the image data of the selected color component is obtained by selecting the color component selected from the above-mentioned components of the R component, the G component, and the B component by -10-201009973. In the image data of the color component, the image data corresponding to the stitching area is cut out from the image data, and the image data cut out is used to perform subsequent processing. Further, when the material of the electrode pad is aluminum and the material of the base layer is copper, it is preferable to cut the image material to the stitch region to select the color component. Further, in the probe device of the present invention, the substrate is placed on the probe card and the mounting table, and the probe of the φ probe card is brought into contact with the electrode pad of the wafer on the substrate, and the wafer is electrically charged. The probe device of the present invention is characterized in that the stitch inspection device of the present invention is provided, and the stitch inspection method of the present invention is performed after the probe is brought into contact with the electrode pad on the substrate to be inspected and electrically measured. a stitch inspection method for imaging a stitch formed on the electrode pad and inspecting presence or absence of exposure of a base layer of the electrode pad, characterized in that: obtaining a color component from the body The engineering of the image data of the color component selected in the R component, the G component, and the bismuth component in response to the difference in reflectance between the material of the electrode pad and the material of the underlying layer; and In the image data, the relationship between the gray scale level set to obtain the image of the material of the base layer in distinction to the material of the electrode spacer and the number of pixels having the gray scale level are obtained. Data work ; And according to this project by seeking out the relationship between the data to track for the basal layer at the exposed needle for the determination of the presence or absence of the project. Further, the present invention is characterized in that, when the grayscale level is set to the same as 11th - 201009973, the image data is subjected to binarization processing based on the image data of the selected color component. The above-mentioned relationship data is obtained for the project of the binary image data for detecting the exposed area of the basement film. Further, the gray scale level is a histogram showing the relationship between the gray scale level and the number of pixels in a range set in advance based on the image data of the selected color component, and Set according to this histogram. Further, the material of the electrode pad is aluminum, and the material of the base layer is made of copper, and the selected color component is preferably a component B. Further, the present invention is characterized in that the color component selected from the R component, the G component, and the B component is removed from the latter to obtain a shadow corresponding to the chip of the electrode pad. The image data of the color component selected by the difference in reflectance between the material of the basal layer, and the diffracted image data of the image data is used as a mask material for the base film. The two-dimensional image data of the detected area is exposed, and the mask processing for removing the pixels corresponding to the shading of the chip of the electrode pad is performed. Further, the composition may be such that the material of the electrode pad is aluminum, the material of the base layer is copper, and the color component selected for masking the material is the R component. Further, it is preferable that the material of the underlayer is copper, and the color component selected for the binary image for detecting the exposed region of the underlayer is the B component. In addition, the image data of the color component selected in accordance with the difference in reflectance between the material of the electrode pad and the material of the underlying layer is included in the process of obtaining the R component and the G component. In the B component, 201009973, the color component selected as the color component of the latter is removed, and the image data corresponding to the stitch region is cut out from the image data, and then The image data that has been cut out is used for subsequent processing. Further, the material of the electrode pad is aluminum, and the material of the base layer is copper, and the color component selected for cutting out the image data for the stitch region is a G component. The Jiyue Media of the present invention is a Jiyue Media storing a computer program used in the stitch inspection device, and the stitch inspection device is configured to contact the probe with an electrode pad on the substrate to be inspected. After the electrical measurement is performed, the stitch formed on the electrode pad is imaged, and the presence or absence of the exposure of the base layer of the electrode pad is examined. The memory medium is characterized in that the computer program is The steps are grouped by performing the above-described respective stitch inspection methods. [Effect of the Invention] # According to the present invention, when the stitch inspection is performed, the image data of the color data is obtained, and the R component data, the G component data, and the B component data extracted from the image data are obtained. The difference between the relative reflectance of the light of the material of the electrode pad and the relative reflectance of the light of the material of the underlying layer is the largest component data, and is selected as the material for determining the exposure of the underlayer. Then 'cut the stitching area and generate data that relates the grayscale level to the number of pixels, and then according to the range corresponding to the grayscale level of the base layer, the data is used for the stitching. Whether or not the base layer is exposed is judged. Therefore, it can be reliably detected automatically and quickly with a good accuracy of -13 - 201009973 degrees for deep excavation, and the burden on the operator can be greatly reduced. Further, since it is possible to perform the inspection of the stitches in the probe device, it is not necessary to carry out the work of transporting the substrate W into the work area of the metal microscope by the operator as in the prior art. Furthermore, it is possible to quickly grasp the abnormality of the probe or the abnormality of the overdrive. [Embodiment] [First Embodiment] Fig. 1 is a view showing a probe device in which a stitch inspection device according to an embodiment of the present invention is incorporated. The probe device includes a bottom plate 20 on which the first stage 21 is supported so as to be movable on the first guide rail 21a extending in the X direction in parallel. The load is carried out, and the ball screw and the motor (not shown) that are axially coupled to the first stage 21 are moved in the X direction shown in the drawing. Further, 'the first stage 21 is in the same state as the first stage 21', and the second stage 22 is moved in the Y direction (not shown) which is orthogonal to the X and Z directions. In the second platform 22, the third platform 23 that can be moved in the z direction shown by the motor (not shown) is stowed. In the moving body of the third stage 23, the Z-axis is used as a center of rotation, and a small amount of free rotation is possible (a small amount can be freely moved in the x-direction, for example, 1 degree left and right). Place the top 24 of the suction cup. Therefore, in the probe device, the first, second, and third stages 21, 22, and 23 and the top 24 of the chuck are used as the drive unit, and the wafers of the -14, 2010, 09,973 can be placed in the Χ, Υ, Ζ, Move in the 0 direction. Further, above the top portion 24 of the chuck, a probe card 32 is disposed via the insertion ring 31 at a head flat plate 30 corresponding to the top of the outer casing of the probe device. The probe card 32 is attached to the upper side, and includes an electrode group (not shown) electrically connected to the test head, and a probe electrically connected to the electrode group at the lower side (for example, facing The probe 33) made of a metal wire extending obliquely downward is provided corresponding to the arrangement of the electrode pads 2 of the wafer 1 (refer to FIG. 2 described later). Further, the probe 33 may be a vertical needle (wire probe) that extends perpendicularly with respect to the surface of the wafer W, or may be a gold bump electrode formed on a flexible film. At the third platform 23, a fixing plate 23a is provided, at which the lower camera 70 is stowed, and the lower camera 70 is used to enlarge the needle tip of the probe 33. The magnification optical system 70a is combined with the CCD camera 70b. Further, at the fixing plate 23a, a low-magnification camera 71 for covering a wide range of photographs for the arrangement of the probes 33 is stowed in such a manner as to be adjacent to the lower camera 70, and is provided with The advancing and retracting mechanism 26 is capable of advancing and retracting the object 27 in a direction intersecting the optical axis with respect to the focal plane of the lower camera 70. » At a region between the top 24 of the chuck and the probe card 32, and the lower camera 70 The camera (image pickup means) 72 having the same configuration is supported by a camera transport unit 34 that is movably supported along a guide member (not shown), and the target 27 is capable of being supported by a lower camera. 70 and -15-201009973 The camera 72 is configured to recognize the image, for example, on a transparent glass plate, and a subject for alignment is formed. Further, in the external package of the probe device, an illumination means such as a blue light-emitting diode that illuminates the wafer w when the wafer W is imaged via the upper camera 72 is provided. 28. In the present embodiment, when the upper camera 72 captures the wafer W, a color camera capable of acquiring the image data D1 of the wafer W as color data including the components of R, G, and B is used. . In addition, the probe unit is provided with a control unit 4 for controlling the driving of the above-described respective members, and includes a CPU 40, a ROM (Read Only Memory) 41, a RAM (Random Access Memory) 42, and an input. The display unit 44 such as the portion 43, the screen, etc., the probe probe program 45, the stitch check program 46, and the like, and each of the devices is configured to be capable of transmitting data or commands via the bus bar 47. connection. The control unit 4 is constituted by a controller connected to the probe device and a personal computer connected to the controller. The probe search program 45 is a command group for controlling the probe device and performing probe test with @, and driving control of the first to third platforms 21 to 23 and the top 24 of the chuck to control the loading. Position the wafer W and perform probe testing. The stitch inspection program 46 is a command group for processing the image data of the wafer obtained by the upper camera 72 and detecting and checking the stitch of the electrode pad 2 after the probe test. In the stitch inspection program 46, the image data of the color component-16-201009973 selected in accordance with the difference in reflectance between the material of the electrode pad and the material of the base layer of the present invention is provided. The RGB component acquisition unit 50 corresponding to the means; and the stitch region extracting portion 51 corresponding to the means for extracting the gray scale level set by the invention and having the relationship data between the gray scale level pixels and A B-component histogram obtaining unit 52 including the means for determining the presence or absence of the exposure of the underlying layer at the stitching of the present invention; and the binary image data of the present invention for detecting the exposed area of the underlying film The B component dimerization unit 53 corresponding to the segment; and the mask processing unit 54 corresponding to the means for performing the φ correction process of the present invention. The RGB component acquisition unit extracts data of each component of R, G, and B from the image data, and acquires a command group of the gray component data of the R component, the grayscale data of the G component, and the data of the B component. The stitch area extracting portion 51 is a command group for processing the G component gray scale data and extracting the stitch region. The B component rectilinear acquisition unit 52 is a command group that processes the gray scale data of the B component and checks whether or not the exposed area of the underlying layer of the electrical pad 2 is present. The component deuteration processing unit 53 is a command group that detects the gray scale data of the B component and detects the position of the exposed region. The mask processing unit 54 is a command group that specifies the position of the stitches by binarizing the gray scale data of the R component and obtaining a mask corresponding to the chips of the electrode pad 2, and performing mask processing. On the other hand, in the present embodiment, the stitch inspection device 46 and the upper camera 72 and the illumination means 28 are used to constitute the stitch inspection device. Next, the action of the above embodiment will be described. First, a probe test for the crystal W which is the substrate to be inspected is performed in accordance with the probe detecting program 45. In Figures 2 and 3, the wafer of this wafer W is shown (

本 之 > 作 取 手 罩 50 並 灰 之 圖 極 BThe > of the hand cover 50 and the gray figure B

片 作 查 檢 據 圓 1C -17- 201009973 晶片）1處的電極墊片2的配置部分之略解圖。在晶圓w 處，係被形成有複數之成爲半導體晶片之原型的晶片1， 在1個的晶片1之上面，係被形成有複數之成爲電極之例 如由鋁（A1)所成的電極墊片2(在圖2中，爲了便利， 係爲10個）。此電極墊片2，係被形成在基底層6之上面 ，該基底層6，係爲在藉由半導體之例如矽（Si)所形成 的基台5上所成膜之例如由銅（Cu )所成者。 在探針測試中，係藉由上攝像機72來對晶圓W之電 極墊片2作攝像，同時，藉由下攝像機70來對於探針卡 32之探針33的針尖作攝像，並求取出在各攝像時之藉由 吸盤頂部24的驅動系或者是線性尺度所特定出的X、γ、 Z方向之座標位置，再將晶圓W移動至根據此座標位置所 求取出之接觸位置處。而後，使探針33與晶圓W上之電 極墊片2相接觸，並藉由經由探針卡3 2所連接的測試頭 而被作了連接之未圖示的測試機，來測定各晶片1之電性 特性。若是探針測試結束，則係進行在電極墊片2處之針 跡的檢査。 接著，針對針跡之檢查作說明。以下之一連串的動作 ，係根據針跡檢查用程式46而進行。如圖4之流程圖中 所示一般，首先，藉由照明手段28，來對探針測試後之晶 圓W作照明，並藉由上攝像機7 2來作攝像，而將晶圓w 上之畫像作爲具備有RGB成分之彩色的攝像資料D1來取 得’並記憶在RAM42中（步驟S1)。接著，如圖6(參 考後述之圖19)中所示一般，從攝像資料D1來將R( -18- 201009973For the inspection, the outline of the configuration of the electrode pad 2 at the 1st point is 1C -17- 201009973. At the wafer w, a plurality of wafers 1 which are prototypes of a semiconductor wafer are formed, and on the upper surface of one wafer 1, an electrode pad made of, for example, aluminum (A1) is formed as a plurality of electrodes. Sheet 2 (in Fig. 2, for convenience, it is 10). The electrode pad 2 is formed on the base layer 6, which is formed on the base 5 formed of, for example, germanium (Si) by a semiconductor, for example, copper (Cu). The person who made it. In the probe test, the electrode pad 2 of the wafer W is imaged by the upper camera 72, and the tip of the probe 33 of the probe card 32 is imaged by the lower camera 70, and taken out. At the time of each imaging, the wafer W is moved to the contact position taken out according to the coordinate position by the driving system of the top 24 of the chuck or the coordinate position of the X, γ, and Z directions specified by the linear scale. Then, the probe 33 is brought into contact with the electrode pad 2 on the wafer W, and each of the wafers is measured by a tester (not shown) connected via a test head connected to the probe card 32. 1 electrical characteristics. If the probe test is completed, the inspection of the stitch at the electrode pad 2 is performed. Next, the inspection of the stitch is explained. The following series of actions are performed in accordance with the stitch inspection program 46. Generally, as shown in the flow chart of FIG. 4, first, the wafer W after the probe test is illuminated by the illumination means 28, and the image is taken by the upper camera 72, and the wafer w is used. The image is acquired as the image data D1 having the color of the RGB component and stored in the RAM 42 (step S1). Next, as shown in Fig. 6 (refer to Fig. 19 described later), R (-18-201009973) is taken from the image data D1.

Red)成分、G (Green)成分、B (Blue)成分之各成分抽 出，並取得身爲各別之灰階資料的R成分資料D2、G成 分資料D3、B成分資料D4 (步驟S2)。 在對於後續之動作作詳述之前，先對於其之槪要以及 目的作簡單的敘述。圖7(a)，係將縱軸設爲相對反射率 ’將橫軸設爲光之波長，並針對銅、鋁、矽之各個，而將 兩者間之關係作展示的圖表，虛線L1係代表銅，實線L2 0 係代表鋁，1點鍊線L3係代表基台5之矽。如同由此圖 而可得知一般，銅之對於紫色之光（波長4 0 Onm )的相對 反射率係爲47.5 %而爲低，並隨著波長之變長而相對反射 率變高，對於紅色之光（波長700nm)，相對反射率係成 爲97.5%。相對於此，當鋁的情況時，相對於紫色之光的 相對反射率係爲9 4 · 8 %，在紅色之光時則成爲8 9 · 9 %，相 對反射率並不會隨著光之波長的變化而有多大的變化，並 展現有高的値。另一方面，於矽的情況時，係不論是對於 β 何種光之波長，其相對反射率均成爲5 0%以下。 本發明，係注目於此種經由各材質與光之波長而使得 相對反射率成爲相異一事，而利用此特性來進行基底層6 之露出區域U (銅之露出區域）的檢測。亦即是，在本實 施形態中，係經由使用與使銅與鋁間的相對反射率之差變 爲最大的紫色光之波長最爲接近的Β成分資料D4，來對 於身爲電極墊片2之材質的鋁與在基底層6之露出區域11 中所出現之銅作區別。而，若是對於Β成分資料D4來進 行此種區別，則由於基台5之矽的反射率係爲低，因此， -19- 201009973 後續之資料處理係成爲難以進行，進而，就算是在爲了排 除基台5之影響而將電極墊片2作了切出的情況時，若是 對於電極墊片2全體區域而進行此種區別，則資料處理之 負荷係會變大’由於上述原因’因此，係設爲將B成分資 料D4之處理對象區域集中在針跡區域。 根據此種觀點’具體而言’係進行有下述一般之處理 (參考後述之圖20)。亦即是，將G成分資料D3作灰階 變換’並取得G灰階資料D31(步驟S3)。在G成分資 料D3中，由於鋁之相對反射率係爲高，而電極墊片2之 部分係被明亮地攝像，因此，若是變換爲G灰階資料D31 ’則電極墊片2之部分的灰階準位係全體性地變高。而後 ，對於G灰階資料D31之所有的像素，在畫面上作掃描 並取得將像素之座標位置與其之灰階準位作了對應的資料 ，而記憶在RAM42中，並在檢測出灰階準位爲高之連續 之區域的同時，將區域之圖示X軸方向以及Y軸方向之 端部的座標檢測出來，而檢測出將此端部作了連接之矩形 〇 若是檢測出了矩形，則將預先所作了記憶的電極墊片 2之匹配樣模讀出，並與該矩形作比較（步驟S4)。圖8 ，係展示此種一連串之處理的示意圖。D31係爲G灰階資 料，T1係爲匹配樣模。而後，當匹配樣模T1與所檢測出 之矩形的一致率成爲了規定値（例如90% )以上的情況時 ，則判定所檢測出了的矩形係爲電極墊片2之區域，相反 的，當在規定値以下的情況時，係重新進行檢測（步驟 -20- 201009973 S5 )。 若是反覆進行步驟S4' S5，並在G灰階資料D31之 全區域中而結束了電極墊片2之檢測，則係針對所檢測出 了的各個的電極墊片2之區域，而進行針跡1〇之位置特 定（抽出）。首先，針對如圖9中所示一般之被切出了的 電極墊片2之畫像，而進行二値化（步驟S6)。在此區 域中，如上述一般，電極墊片2之區域的灰階準位係變高 φ ，相對於此，在針跡1〇處，其邊緣部之陰影或是切削屑 之陰影的位置，或是進而當在針跡10處被形成有露出區 域11的情況時，銅之相對反射率由於係較電極墊片2更 低’因此，在露出區域11之位置處，像素的灰階準位係 變低。因此，若是進行二値化，則係取得下述一般之G二 値化資料D32:電極墊片2之區域中，邊緣部l〇a或是切 削屑之陰影12、露出區域11之部分的像素，係成爲〇, 而其他之區域係成爲1。 φ 在取得了 G二値化資料D32後，對於G二値化資料 D32，而進行與對於灰階資料D31所進行了的像素之探索 相同的探索。此時，例如係在RAM42中，將記憶最大X 位置、最小X位置、最大丫位置、最小丫位置之各座標 的區域作確保，並當最初而發現到値爲〇之像素的情況時 ，將該像素之座標記憶在上述記憶區域之全部中。而後， 繼續進行探索’當發現了下一個的値爲〇之像素的情況時 ’則與所記憶之各座標分別對於X、Y座標來進行比較， 當所發現之座標的値係爲更爲適當之値的情況時，例如， -21 - 201009973 當x之値係爲較被記憶在最大x位置之記憶區域中的値 更大的情況時，則係將所發現了的座標抹寫至個別之記憶 區域中。 藉由此，而得知針跡10之XY平面上的位於最外側 處之像素的位置，並根據此座標位置，而將與針跡10相 一致之例如相接於針跡10之外週側的矩形狀之針跡區域 1 3以及其之座標位置檢測出來，而將該資料記憶在 RAM42中（步驟S7)。而後，反覆進行步驟S6、S7，而 將全部的電極墊片2之每一者的針跡區域13以及其之座 標位置檢測出來，並將該資料記憶在RAM42中。 另外，在本實施形態中，係將在把電極墊片2之區域 作二値化時所使用的灰階準位之臨限値記憶在RAM42中 ，並將該臨限値讀取出來，但是，本發明之實施形態，係 並不被限定於此，例如，亦可對於在電極墊片2之區域中 的像素之灰階準位作調査，並產生將灰階準位作爲橫軸、 將像素數作爲縱軸的直方圖，再根據此直方圖之峰値等的 形狀，來決定臨限値。 在檢測出了所有的針跡區域13後，如圖5之流程圖 中所示一般，首先，如圖10(a) —般地將B成分資料D4 t 作灰階變換，並取得B灰階資料D41 (步驟S21)。而後 ，由B灰階資料D41來將對應於針跡區域13之區域的資 料切出，並如圖10(b)中所示一般地而取得B針跡區域 13b，再從B針跡區域13b而產生如圖11 (a)中所示一 般之將灰階準位作爲橫軸並將像素數作爲縱軸的直方圖（ 201009973 將灰 而此 地。 般出 1 抽 示 C 所圖 中方 ) 直 ( 的 1 內 圍 圖範 如之 , 位 後準 圖 階 方灰 直的 〇 了了 }生定 22產設 S 在所 驟 先 步 階準位之範圍，係爲作爲能夠根據基底層6之銅與電極墊 片2之鋁之間的反射率之差來進行基底層6與電極墊片2 間之區域的劃分之範圍、亦即是作爲銅之檢測範圍，而設 定了的灰階準位之範圍，在本實施形態中，係將灰階準位 φ 之値爲70〜100之間的範圍，作爲上述範圍而設定之。而 後，從直方圖C來藉由週知之方法而將所存在之所有的峰 値檢測出來（步驟S23 )。 在本實施形態中，係在電極墊片2處使用鋁，並在基 底層6處使用銅，因此，在B成分資料D4中，基底膜6 所露出之露出區域11的相對反射率，相較於電極墊片2 之相對反射率，係變爲較低，而相較於電極墊片2之區域 ，露出區域11係被攝像爲較暗。故而，在B灰階資料 D41中，當被形成有露出區域11的情況時，露出區域11 之灰階準位，相較於電極墊片2之區域，係變低。又，在 B灰階資料D41中，銅之灰階準位，由於係成爲落在上述 之對應於銅之檢測範圍的灰階準位之範圍內之値，因五， 若是在被形成有露出區域之狀態下而產生直方圖，則對應 於露出區域11之灰階準位的像素數係變多，並在直方圖 C內，形成特徵性地、例如相較於其他之峰値而明顯爲大 之峰値（步驟S24)。故而，當被檢測出此特徵性之峰値 的情況時，則得知係被形成有露出區域11。 -23- 201009973 此特徵性之峰値的檢測，係藉由週知之方法（例如， 低通濾波處理等）而被進行。而，當檢測出了特徵性之峰 値、例如檢測出了圖1 1 ( b )中所示之峰値P 1的情況時 ，則將峰値P1之起點P2與終點P3的灰階準位之値，作 爲在將B針跡區域13b二値化時的臨限値之上限以及下限 而設定之（步驟S25 )。另外，當無法發現到對應於露出 區域11之峰値P1的情況時，針對與檢測中之B針跡區域 13b相對應的電極墊片2，係判斷並不存在有露出區域11 ，並中止檢測，而將該資訊記憶在RAM42中（步驟S30 )° 若是臨限値之範圍被設定，則如圖10(c)中所示一 般，根據該臨限値之範圍，而將B針跡區域13b二値化， 並將B針跡區域13b之像素中的臨限値內之灰階準位的像 素設爲「〇」，且將臨限値外之灰階準位的像素設爲「1」 。而後，取得銅所露出之露出區域11的像素以及臨限値 內之像素的區域爲黑、且其他區域係爲白的B二値化資料 D42，並將該資料記憶在RAM42中（步驟S26)。之後， 反覆進行上述之步驟S21〜S24，並針對所有之電極墊片2 而進行峰値P1之檢測，以及取得每一者之電極墊片2的 B二値化資料S42，並將該資料記憶在RAM42中。 如此這般所得到之B二値化資料D42，係會有在灰階 準位之臨限値的範圍內而包含有與針跡10之邊緣部或是 鋁之陰影相對應的灰階準位之情況，如此一來，不僅是銅 的露出區域11，連與該些之陰影相對應的區域，亦會作爲 -24- 201009973 「〇」（黑像素）而被表現。因此，爲了將此些之區域作 劃分，係設爲使用已被作了收錄之在RAM42中所記憶的 R成分資料D2，來對於前述陰影而進行附加遮罩之遮罩處 理。亦即是，首先，如圖12(參考後述之圖21)中所示 —般，將R成分資料D2二値化，而取得遮罩資料D21 ( 步驟S27)。圖12中，10a係爲邊緣部之陰影，12係爲切 削屑之陰影。在R成分資料D2中，電極墊片2之鋁與基 φ 底層6之銅的相對反射率由於係並不存在有差距，因此， 露出區域11係被攝像爲較明亮，而只有邊緣部10a之陰 影或是切削屑之陰影12的區域被攝像爲較暗。因此，若 是取得遮罩資料D21，則如圖12中所示一般，僅有對應 於陰影之部分的像素會成爲0，而其他部分之像素係成爲 1 ° 對於此遮罩D21，而如同前述一般地將針跡區域13 切出，並使用切出了的遮罩資料D21，來對於b二値化資 春 料D42進行遮罩處理。亦即是’將與遮罩資料D21之「0 」的像素重叠之B二値化資料D42之「〇」的像素置換爲 「1」（步驟S28)。若藉由此處理，則係相當於從圖13 所示之B二値化資料〇42中的黑區域之中來將對應於邊緣 部之陰影l〇a或是切削屑之陰影12的黑區域作除去之處 理，其結果，係成爲得到將銅之露出區域11作爲黑區域 之針跡E域13的畫像。將此畫像資料，稱作露出位置特 定資料15。而後，此露出位置特定資料15,係被記憶在 RAM42中（步驟29)。而後，反覆進行步驟S25〜S27, -25- 201009973 而對於所有的B二値化資料D42進行遮罩處理，並取得遮 罩處理後之露出位置特定資料15，再將該資料記憶在 RAM42 中。 而後’從RAM42而將相關於與各電極墊片2相對應 之針跡10的資訊讀出，針對包含有不存在針跡10之電極 墊片2的1C晶片，例如係附加再檢查之顯示，而對於包 含有在露出位置特定資料15中之作爲銅的露出區域來處 理之「〇」的像素之數量超過了預先所設定之像素數的電 極墊片2之晶片1、例如針對只要是存在有1個以上的「〇 」之像素的晶片1，則將針跡1 0係爲深挖掘等之資訊附加 於該晶片1處，並記憶在RAM42中。若是針對在取得了 此種資訊後之處理的其中一例作敘述，則針對被判斷爲深 挖掘之電極墊片2，係亦可令作業員將該電極墊片2之例 如RGB成分爲混合存在的原本之畫像顯示在顯示部處， 並由作業員來對於該深挖掘之判斷是否爲合適一事作確認 ’而若是最終係被判斷爲深挖掘，則將包含該電極墊片2 之晶片1作爲不良品來處理。又，不用說，亦可並不進行 此種作業員之確認。亦可將針跡檢査之結果，例如與晶圓 W上之晶片1的位置相附加對應的而顯示在顯示部處，並 例如在各晶片1處，進行對應於該結果之顏色分配等。 另外，在本實施形態中，係分別由RGB成分取得部 5〇來進行與步驟S 1、步驟S2相對應之工程、由針跡區域 抽出部51來進行與步驟S3〜步驟S7相對應之工程、由B 成分直方圖取得部52來進行與步驟S21〜步驟S25、以及 201009973 步驟S30相對應之工程，由B成分二値化部53來進行與 步驟S26相對應之工程、由遮罩處理部54來進行與步驟 S27〜步驟S29相對應之工程。 以上所述之本實施形態的探針裝置，係在進行針跡10 之檢査時，取得身爲彩色資料之攝像資料D1，並將從攝 像資料D1所抽出之R成分資料D2、G成分資料D3、B 成分資料D4中，身爲電極墊片2之材質的鋁之光的相對 φ 反射率與身爲基底層6之材質的銅之光的相對反射率之間 的差成爲最大的B成分資料D4，作爲基底層之露出判定 用資料而選擇。而後，從B成分資料D4來將針跡區域13 切出，並產生灰階準位與像素數間之直方圖，再從該直方 圖來檢測出在對應於基底層6之銅的灰階準位之範圍內的 峰値P1，並將此峰値1所對應之灰階準位作爲臨限値之 範圍，而取得B二値化資料D 42。進而，經由進行使用有 R成分資料D2之遮罩處理，而將與切削屑之陰影12等相 • 對應的區域除去。故而，能夠將探針33所致之墊片2的 深挖掘（一直挖掘到了基底層6處的狀態）自動且迅速地 以高精確度而確實的檢測出來，且亦能夠將作業員之負擔 大幅度的減輕。又，由於係能夠在探針裝置內來進行針跡 1〇的檢査，而不需要如同先前技術一般地進行作業員所致 之將基板W搬送至金屬顯微鏡的作業區域內之作業，因 此’係能夠更進而對於探針之異常或是過驅動的異常等迅 速地作掌握。 又，在本實施形態中，係從攝像資料D1而抽出R成 -27- 201009973 分資料D2、G成分資料D3、B成分資料D4，並將R成分 資料D2使用在遮罩處理中，將〇成分資料d3使用在針 跡iu置檢測處理中’而將B成分資料D4使用在基底層露 出判定處理中。因此’進行實際之處理的資料，相較於攝 像資料D1’由於資料量係變少’因此，能夠謀求各處理 之效率化。 在上述之實施形態中，對於B二値化資料D42，係利 用R成分資料D2而施加有遮罩處理，因此，係存在有能 夠將針跡10之邊緣或是鋁之切削屑的陰影與銅之露出區 域作分離之優點，但是，作爲本發明之實施形態，係亦可 並不進行遮罩處理。於此情況，例如係可根據實驗資料來 對於鋁之切削屑等的陰影之區域的面積（像素數）預先作 決定’並使用從二値化資料D42中之黑區域的像素數而將 陰影之區域的像素數減去後的資料，來判定銅之露出區域 的有無。又’在上述之實施形態中，係在每一次之對電極 墊片2作攝像時，對於成分資料D4來求取圖7中所示之 直方圖，並求取出灰階準位之臨限値，但是，例如亦可對 於晶圓W之每一種類而分別預先求取出前述臨限値，並 儲存在RAM42中，再因應於成爲針跡檢查之對象的晶圓 W之種類別，來將臨限値讀出，並使用該臨限値來作成B 成分之二値化資料。而後，由此B成分之二値化資料中， 來將電極墊片之切削屑之陰影等的像素除去，並對於該B 成分之二値化資料作探索，而藉由發現到「〇」之像素一 事，來判定露出區域之有無。 -28- 201009973 但是’根據圖7中所示之直方圖而求取出之臨限値， 由於係爲較該臨限値而灰階準位爲更高之像素、亦即是用 以將對應於銅之露出區域的像素作抽出者，因此，亦可例 如並不根據此臨限値來作成二値化資料，並對於灰階準位 爲較該臨限値更高之像素的數量作計數，再由該計數値， 來將針對相當於針跡10之邊緣或是鋁之陰影的區域而預 先所設定了的像素數減去，而根據所得到之像素數，來判 定銅之露出區域的有無。又，亦可並不使用像素數，而由 位置座標來求取出灰階準位爲高之像素的區域之面積，並 因應於該區域之面積來判定銅之露出區域的有無。 又，本發明，係從r、G、B之各成分中，來因應於 電極墊片之材質與基底層之材質間的反射率之差，而選擇 適當之成分，亦即是，選擇具備有在對於其中一方之材質 作特定的灰階準位之範圍內，係不會重疊有對另外一方之 材質作特定的灰階準位，而能夠有效地將兩者作區隔之程 度的反射率之差的波長成分，並如同已述一般地而將基底 層之露出區域檢測出來者，因此，電極墊片之材質或是基 底層之材質，係並不被限定於銅、鋁，只要因應於所使用 之各材質，而對於R、 、B之任一成分的畫像作利用即可 。於此，本發明之針跡檢測裝置，係並不被限定於組合於 探針裝置中地作設置，而亦可作爲獨立運行式（stand alone )來構成。又，在本實施形態中，雖係於針跡區域的 檢測中使用有G成分之資料，但是，作爲本發明之實施形 態，只要是能夠進行墊片區域之特定、針跡區域之檢測、 -29- 201009973 以及基底層之露出判定，則亦可構成爲僅使用單一之色彩 成分的資料，例如僅使用B成分之資料，而進行墊片區域 之特定以及針跡區域之檢測、還有針跡區域之直方圖的取 得，並對露出之有無作判定。 〔第2實施形態〕 本發明，係爲取得電極墊片之彩色畫像，並取得對應 於該畫像之R、G、B成分的畫像，而利用該各成分資料 中，電極墊片的反射率與基底膜的反射率間之差於該些之 成分中而成爲最大的成分資料，而檢測出露出區域的針跡 檢査裝置。故而，對晶圓W作攝像之手段，係並不被限 定於第1實施形態之上攝像機72,例如，亦可另外將專用 之攝像機設置在與上攝像機72相異之場所處，例如設置 在頭部平板等之處。又，作爲攝像手段，亦並不被限定於 如同上攝像機72 —般之能夠取得包含有R、G、B成分之 彩色畫像的彩色攝像機，例如，亦可將專門用以取得R、 G、B之各別之成分的3台之攝像機作組合，來構成攝像 手段。 由以上，可以得知’作爲本發明之實施形態，係亦可 爲如同下述之第2實施形態中所示的形態。在此第2實施 形態之探針裝置中，係如圖14中所示一般，將藉由上述 之僅用以取得R成分之攝像資料的R攝像機73a、僅用以 取得G成分之攝像資料的G攝像機73b以及僅用以取得B 成分之攝像資料的B攝像機73c作組合而構成的攝像機單 201009973 兀73’設置在頭部平板30處’並經由此攝像機單元73, 而從探針卡32之側方來對於探針33與電極墊片2之剛作 了接觸後的畫像作攝像。又’攝像機單元73，係具備有照 明手段28a。而’攝像機單元73，在對晶圓w作攝像時， 係並非得到攝像資料D 1，而是藉由各攝像機73 a〜73 c來 取得R成分資料D2、G成分資料D3、B成分資料D4。在 此種實施形態中，亦係將B成分資料D4作爲基底層之露 0 出判定用資料來選擇，並例如能夠進行與第1實施形態相 同之處理。 又’在本實施形態中，在對晶圓W作攝像時，係並 不需要爲了移動上攝像機72而使頭部平板30作退避，而 成爲能夠在探針測試後，立即藉由攝像機單元73來取得 各成分資料D2〜D4，並進行露出區域11以及其之位置的 檢測，因此，係能夠將檢査效率提升。另外，在本實施形 態中，亦可設爲：在攝像機單元73之各攝像機73a〜73c φ 處設置濾波單元，並根據由在基底層6之材質處的R成分 、G成分、B成分之光的反射率所設定的抽出用臨限値， 來進行濾波，並僅將與基底層6之材質相對應的各成分灰 階準位之範圍內的像素抽出，而取得資料D2〜D4。又， 攝像機單元73，由於係成爲將RGB各成分之資料D2〜D4 分別藉由各別的攝像機73a〜73c來作攝像之構成，因此 ，亦可設爲以成爲能夠藉由各攝像機73a〜73c來將RGB 各成分資料D2〜D4鮮明地作攝像的方式，來對於照明手 段28之光的各成分中之光度作調整，並將各攝像機73a〜 -31 - 201009973 73c之攝像時序錯開。 〔第3實施形態〕 又，作爲本發明之實施形態，係亦可爲如同下述之第 3實施形態中所示的形態。在此第3實施形態之探針裝置 中’代替在第1實施形態中所具備之上攝像機72與照明 手段28，係具備有如圖15中所示一般之可將攝像資料D1 作爲單色畫像而取得之上攝像機72m，並進而具備有用以 將晶圓W作照明之例如由發光二極體所成的r照明手段 28r、G照明手段28g、B照明手段28b。R照明手段28r 係以紅色之光、G照明手段係以綠色之光，而B照明手段 係以藍色之光來對晶圓W作照明。藉由此，在上攝像機 72m處’由於係成爲能夠僅取得與從各照明手段28r、28g 、28b所照明之光相對應的成分之畫像資料，因此，係與 第2實施形態相同的，成爲能夠個別地取得R成分資料 D2、G成分資料D3、B成分資料D4。在此種實施形態中 ’亦係將B成分資料D4作爲基底層之露出判定用資料來 選擇，並例如能夠進行與第1實施形態相同之處理。又， 在本實施形態中，係成爲僅需對於R照明手段28r、G照 明手段28g、B照明手段28b之光的強度作調整，便可將 RGB各成分資料D2〜D4鮮明地作攝像。 以上’雖係針對本發明之各實施形態作了說明，但是 ’本發明係並不被限定於上述之實施形態。例如，如圖i 6 中所示一般’露出位置特定部52’係亦可在產生直方圖時 -32- 201009973 ，根據與預先所制訂了的B灰階資料D4 1中之基底層6相 對應的灰階準位之標準樣本hi’來使用從先前技術起便爲 週知之最大誘導法等’來將直方圖作平滑化’並將灰階準 位之偏差作吸收。藉由此’係成爲能夠將由於基底層6之 銅的氧化或是針跡1〇之形狀的差異、由於上攝像機72與 照明手段28之角度或光度等所產生的灰階準位之偏差作 吸收。因此，對於當使用可取得彩色資料之攝像手段的情 φ 況時所會產生的例如基底之銅由於氧化而變色、或是攝像 資料依存於光源而使攝像資料本身起了變化，而結果上使 得色彩之觀察上產生變化並在資料中產生偏差幅度的問題 ，係成爲能夠作對應。而，係成爲能夠將本實施形態之控 制部4所致的露出區域11與其之位置檢測的精確度作更 進一步的提升。 〔實施例〕 接著，針對具備有本發明之針跡檢查裝置的探針裝置 之具體性的運用方法，參考圖17、圖18來作說明。首先 ，作爲第1運用方法’如圖17之流程中所示一般，使探 針33與電極墊片2相接觸，並進行最初之探針測試（步 驟S31) ’並在探針測試結束後，藉由身爲攝像手段之上 攝像機72或是攝像機單元73(以下，單純稱爲攝像手段 )’來對晶圓w之檢查區域全體作攝像’並取得攝像資 料D1 (步驟S32)。接著，在畫像抽出部50處，從攝像 資料D1來將G成分資料〇3抽出，並藉由G成分資料D3 -33- 201009973 來檢測出針跡1〇(步驟S3 3)。在針跡檢查後，例如對於 針跡10處之1的像素之容許數作決定’並將被形成有具 備超過該容許數之1的像素的針跡之電極墊片2、亦即 是將有可能爲被形成有露出區域11之電極墊片2抽出（ 步驟S34 )。 而後，僅對於所抽出了的電極墊片2而藉由攝像手段 來攝像（步驟S35)，並取得新的B成分資料D4、R成分 資料D2，而藉由露出位置特定部52、遮罩處理部53來進 行處理，並判定在電極墊片2處是否被形成有露出區域11 (步驟S36)。若藉由此運用方法，則由於係能夠於最初 便得知探針33係對於電極墊片2而以會使露出區域11形 成之強大程度來作了接觸，因此，能夠防止在其後之試驗 中而在電極墊片2處附著有基底層之銅的事態，又，亦成 爲能夠進行探針33與電極墊片2間之接觸位置的微調整 〇 接著，作爲第2運用方法，係如圖18之流程中所示 一般，在探針測試結束後，針對所有之晶片1的探針測試 之結果作調查。在探針測試時，當探針33之前端到達了 基底層6處的情況時，探針測試之結果由於係落入至預先 所制訂之BIN的範圍內，因此，係將該晶片1之位置檢測 出來（步驟S4 1)。而後，藉由攝像手段來對於該晶片！ 之電極墊片2作攝像（步驟S42 )，並藉由針跡位置特定 部50來從G成分資料〇3而特定出針跡位置。（步驟S43 )。接著’藉由與步驟S34相同之方法，來抽出具備著被 201009973 形成有露出區域11之可能性的電極墊片2(步驟S44)， 並從B成分資料D4、R成分資料D2，來藉由露出位置特 定部52、遮罩處理部53而進行處理，並判定在電極墊片 2處是否被形成有露出區域11(步驟S45)。若藉由此運 用方法，則由於係能夠由探針測試後之結果，來僅對具備 有在電極墊片2處被形成有露出區域11之可能性的晶片1 作檢查，因此，係能夠使檢查效率提升。 φ 接著，針對爲了對本發明之效果作確認所進行了的實 驗作說明。首先，作爲第1實驗，係使用第1實施形態之 探針裝置，並藉由上攝像機72來對晶圓W作攝像，而取 得對應於晶圓W之全面的例如被作了 39分割之攝像資料 D1。接著，藉由金屬顯微鏡來對晶圓W作目視，並產生 將露出區域11之像素置換爲「〇」且將其以外之像素置換 爲「1」而作了二値化之畫像，亦即是產生人類藉由眼睛 所作成的所謂之Ground Truth畫像（以下，單純稱爲GT 畫像），再從其中而將例如75個的電極墊片2作爲樣本 而選擇出來。而後，將從GT畫像所檢測出之被形成有露 出區域11的電極墊片2之數量，與將攝像資料D1藉由控 制部4所檢測出之結果作比較’而對於露出區域1 1之檢 測精確度作了調査。另外’在實驗中，在作爲樣本而使用 了的75個的電極墊片2中’係在53個的電極墊片2處被 形成有露出區域11。於表1中’展示此第1實驗之結果。 在第1實驗中，如同以下之表1中所示一般，針對被 形成有露出區域11之電極墊片2，係全部檢測出了其之被 -35- 201009973 形成有露出區域11 一事。另一方面’針對未被檢測出有 露出區域11之22個的電極墊片’於22個中’對於4個 的電極墊片，係誤檢測爲其係被形成有露出區域11。在針 對此被作了誤檢測之電極墊片2而對實物作了調查後’發 現其原因在於：在電極墊片2處，係存在著像素單位之非 常小的附著有基底層6之銅的部分，並將此部分作爲露出 區域11而作了誤辨識。換言之，在控制部4處，針對附 著有無法藉由金屬顯微鏡而檢測出來之細微的銅之電極墊 片2，亦係成爲能夠將其作爲具有露出區域11者而檢測出 來。當在電極墊片2處附著了銅的情況時，由於會有對於 晶片1之電性特性造成不良影響之虞，因此，關於該種晶 片1，係成爲不良品，由此事，可以得知，本實施形態之 針跡檢查裝置，其之露出區域11的檢測精確度係爲極高 ，進而，針對在金屬顯微鏡等所致之目視中所無法檢測出 來的成爲不良品之晶片1，亦可將其判定爲不良品。又， 由於係能夠進行細微之銅的檢測，因此，係成爲亦能夠進 行探針33之污染檢査。又，作爲對此誤辨識作抑制並僅 將露出面檢測出來的方法，在二値化畫像所致之露出位置 的檢測時’藉由設置將一定之面積以下的部分排除之臨限 値’係成爲能夠得到1 0 0 %之正確結果。 〔表1〕 GT畫像 檢測爲有露出部 檢測爲無露出部 有露出部 53 0 無露出部 4 18 201009973 接著，作爲第2實驗，使用第1實施形態之探針裝置 ，並針對晶圓W上之電極墊片2而進行了 1分鐘間之露 出區域11的檢測，而針對能夠對於幾枚之電極墊片2作 檢查一事進行了調查。又，作爲比較對象，係與先前技術 相同的而使用金屬顯微鏡等來對於相同之晶圓W進行檢 查，並針對能夠對於幾枚的電極墊片2作檢查一事進行了 調查。在探針裝置之控制部4處，從取得攝像資料D1起 φ 直到針對1個的電極墊片2而檢測並判定是否被形成有露 出區域11爲止，平均係需要約45mSec。而，在本實施形 態之控制部4中，於攝像資料D1之取得等之中，由於係 成爲需要15秒，因此，在1分鐘之間，係能夠對於1000 枚之電極墊片2而進行露出區域11之檢測。 另一方面，在先前技術之金屬顯微鏡所致之檢測中， 爲了對於1的電極墊片2而檢測並判定是否被形成有露出 區域11 一事，平均上係需要約200〜500mSec，且在晶圓 Φ W之定位等中亦需要耗費時間，因此，在1分鐘之間，係 僅能夠針對20枚之電極墊片2而進行檢測。再加上，在 此檢測方法中，由於會因爲作業從事者之疲勞或是集中力 之降低、檢查從事者個人之能力差別，而使檢查時間有所 改變，因此，要恆常以一定之速度來長時間且連續性地進 行檢測一事，係爲不可能。相對於此，在本實施形態之探 針裝置中，由於係經由控制部4來進行檢測，因此，係成 爲能夠長時間且連續性地作檢測，又，在檢測速度上，相 較於金屬顯微鏡所致之檢查’亦係成爲能夠以約500倍之 -37- 201009973 速度來進行，因此，係能夠將檢查效率大幅度的提升。由 上述之2個的實驗結果，可以得知，本實施形態之針跡檢 查裝置，相較於先前技術之使用金屬顯微鏡等所進行的檢 查，在精確度以及檢查速度上係均爲優秀。 接著，針對以第1實施形態之針跡檢査裝置所進行了 的針跡10之檢測，一面參考實際之晶圓W的攝像資料一 面作說明。首先，如圖19中所示一般，進行與步驟si、 步驟S2相對應之工程，而取得攝像資料D1，並從攝像資 料D1來取得R成分資料D2、G成分資料D3、B成分資 料D4。接著，如圖20中所示一般，進行與步驟S3、步驟 S4、步驟S5、布驟6、步驟7相對應之工程，並由圖20 (a)中所示之G成分資料D3來取得灰階資料D31，並進 行像素之探索，在使用圖20(b)中所示之匹配樣模T1， 來檢測出電極墊片2之區域。而後，若是如圖20(c)中 所示一般而檢測出了所有的電極墊片2之區域，則進行圖 20(d)中所示之將電極墊片2的區域作二値化並檢測出 針跡區域13之工程》 而後，若是進行從上述步驟S21起至步驟S26之工程 ，並取得了 B二値化資料D42，則如圖21中所示一般， 進行步驟S27之工程，並將R成分資料D2二値化，而取 得遮罩資料D21，再根據此遮罩資料D21來進行上述之遮 罩處理，而對於露出區域11之有無以及位置作特定。經 由進行以上之工程’在本實施形態之針跡檢査裝置中，係 進行與針跡10相對應之針跡區域13的檢測、露出區域11 -38- 201009973 之有無的檢測、以及露出區域11之位置特定。 【圖式簡單說明】 〔圖1〕本發明之實施形態之探針裝置的槪略構成圖 〇 〔圖2〕本實施形態之晶圓W的槪略平面圖。 〔圖3〕本實施形態之晶圓W的槪略剖面圖。 φ 〔圖4〕對本實施形態之針跡檢査裝置的檢測處理程 序作說明之第1流程。 〔圖5〕對本實施形態之針跡檢査裝置的檢測處理程 序作說明之第2流程。 〔圖6〕對本實施形態之針跡檢查裝置的檢測處理程 序作說明之第1說明圖。 〔圖7〕用以對於在本實施形態之針跡檢查中所使用 的資料之選定方法作說明的說明圖。 • 〔圖8〕對本實施形態之針跡檢查裝置的檢測處理程 序作說明之第2說明圖》 〔圖9〕對本實施形態之針跡檢查裝置的檢測處理程 序作說明之第3說明圖。 〔圖10〕對本實施形態之針跡檢查裝置的檢測處理程 序作說明之第4說明圖。 〔圖1 1〕對本實施形態之針跡檢查裝置的檢測處理程 序作說明之第5說明圖。 〔圖12〕對本實施形態之針跡檢査裝置的檢測處理程 -39- 201009973 序作說明之第6說明圖。 〔圖13〕對本實施形態之針跡檢查裝置的檢測處理程 序作說明之第7說明圖。 〔圖14〕本發明之第2實施形態之探針裝置的槪略構 成圖。 〔圖15〕本發明之第3實施形態之探針裝置的槪略構 成圖。 〔圖16〕本發明之其他實施形態的針跡檢查方法之說 明圖。 〔圖1 7〕用以對本發明之實施例作說明的第1流程。 〔圖1 8〕用以對本發明之實施例作說明的第2流程。 〔圖1 9〕用以對本發明之實施例作說明的第1說明圖 〇 〔圖20〕用以對本發明之實施例作說明的第2說明圖 〇 〔圖2 1〕用以對本發明之實施例作說明的第3說明圖 〇 〔圖22〕用以對於在先前技術之針跡檢査裝置中的課 題作說明之第1說明圖。 〔圖23〕用以對於在先前技術之針跡檢查裝置中的課 題作說明之第2說明圖。 【主要元件符號說明】 1 :晶片 -40- 201009973 2 :電極墊片 4 :控制部 6 :基底層 I 0 :針跡 l〇a :邊緣部之陰影 II :露出區域 1 2 :切削屑之陰影 φ 1 3 :針跡區域 1 3 b : B針跡區域 1 5 :露出位置特定資料 21 :第1平台 22 :第2平台 23 :第3平台 24 :吸盤頂部 28、28a :照明手段 • 28b : B照明手段 28g : G照明手段 28r : R照明手段 30 :頭部平板 33 :探針Each component of the Red component, the G (Green) component, and the B (Blue) component is extracted, and R component data D2, G component data D3, and B component data D4 which are respective gray scale data are obtained (step S2). Before making a detailed description of the subsequent actions, a brief description of its main purpose and purpose is given. Fig. 7 (a) shows a graph in which the vertical axis is the relative reflectance, and the horizontal axis is the wavelength of light, and the relationship between the two is shown for each of copper, aluminum, and tantalum. Representing copper, the solid line L2 0 represents aluminum, and the 1-point chain line L3 represents the top of the base 5. As can be seen from this figure, the relative reflectance of copper for purple light (wavelength 40 Onm) is 47. 5% is low, and the relative reflectance becomes higher as the wavelength becomes longer. For red light (wavelength 700 nm), the relative reflectance is 97. 5%. In contrast, When the case of aluminum, The relative reflectance relative to the purple light is 9 4 · 8 %, In the red light, it is 8 9 · 9 %, The relative reflectivity does not change as the wavelength of the light changes. And show a high embarrassment. on the other hand, In the case of Yu Yu, Whether it is for β, which wavelength of light, The relative reflectance is 50% or less.  this invention, Pay attention to the fact that the relative reflectance becomes different through the wavelength of each material and light. This characteristic is used to detect the exposed region U (the exposed region of copper) of the underlying layer 6. That is, In this embodiment, By using the Β component data D4 which is the closest to the wavelength of the violet light which maximizes the difference between the relative reflectances of copper and aluminum, The aluminum which is the material of the electrode spacer 2 is distinguished from the copper which appears in the exposed region 11 of the base layer 6. and, If this is the case for the Β component data D4, Then, since the reflectivity between the bases 5 is low, therefore,  -19- 201009973 Subsequent data processing became difficult, and then, Even in the case where the electrode pad 2 is cut out in order to eliminate the influence of the base 5, If this is the case for the entire area of the electrode pad 2, Then the load of the data processing will become larger. It is assumed that the processing target area of the B component data D4 is concentrated in the stitch area.  According to this point of view, the following general processing is carried out (see Fig. 20 which will be described later). That is, The G component data D3 is subjected to gray scale conversion' and the G gray scale data D31 is obtained (step S3). In the G component data D3, Since the relative reflectance of aluminum is high, And part of the electrode pad 2 is brightly photographed. therefore, If it is converted to the G gray scale data D31', the gray scale level of the electrode pad 2 becomes higher overall. Then, For all the pixels of the G grayscale data D31, Scanning on the screen and obtaining the data corresponding to the coordinate position of the pixel and its gray level. And remembered in RAM42, And while detecting a continuous area where the gray level is high, The coordinates of the end portion of the region in the X-axis direction and the Y-axis direction are detected, And the rectangle that connects the ends is detected. 〇 If a rectangle is detected, Then, the matching pattern of the electrode pad 2 which has been memorized in advance is read, And compared with the rectangle (step S4). Figure 8, A schematic diagram showing such a series of processes. D31 is a G gray scale material. The T1 system is a matching model. then, When the matching rate between the matching pattern T1 and the detected rectangle becomes a predetermined value (for example, 90%) or more, Then, it is determined that the detected rectangle is the area of the electrode pad 2, The opposite of, When the situation below the specified threshold, Re-test (step -20- 201009973 S5).  If step S4' S5 is repeated, And the detection of the electrode pad 2 is completed in the entire area of the G gray scale data D31. For the area of each of the electrode pads 2 that are detected, The position of the stitch 1 is specified (extracted). First of all, For the portrait of the electrode pad 2 which is cut out as shown in Fig. 9, The second conversion is performed (step S6). In this area, As above, The gray scale level of the region of the electrode pad 2 becomes high φ , In contrast, At the stitching 1〇, The shadow of the edge or the position of the shadow of the chip, Or in the case where the exposed area 11 is formed at the stitch 10, The relative reflectivity of copper is lower than that of electrode pad 2, so At the location of the exposed area 11, The gray scale level of the pixel becomes lower. therefore, If it is done, The following general G data is obtained: In the area of the electrode pad 2, The edge portion l〇a or the shadow of the shavings 12 Exposing the pixels of the portion of the area 11, Become a 〇,  The other regions are 1.  φ After obtaining the G dilatation data D32, For the G dilatation data D32, The same exploration as the exploration of the pixels for the grayscale data D31 is performed. at this time, For example, in the RAM 42, Will remember the maximum X position, Minimum X position, Maximum position, The area of each coordinate of the minimum 丫 position is ensured, And when it was first discovered that it was a pixel of 〇, The coordinates of the pixel are stored in all of the above memory areas. then,  Continue to explore 'when the next smashed pixel is found ’ and the coordinates of the memory are respectively for X, Y coordinates to compare,  When the tethers of the coordinates found are more appropriate, E.g,  -21 - 201009973 When x is more large than 値 in the memory area of the maximum x position, The found coordinates are smeared into individual memory areas.  By this, And knowing the position of the pixel located at the outermost side on the XY plane of the stitch 10, And according to this coordinate position, On the other hand, a rectangular stitch region 13 which is adjacent to the stitch 10 and which is adjacent to the outer peripheral side of the stitch 10, and its coordinate position are detected, The data is stored in the RAM 42 (step S7). then, Repeat step S6, S7, And detecting the stitch area 13 of each of the electrode pads 2 and the coordinate position thereof, The data is stored in the RAM 42.  In addition, In this embodiment, The threshold of the gray scale level used in the area of the electrode pad 2 is stored in the RAM 42. And read the threshold, but, Embodiments of the present invention, The system is not limited to this, E.g, It is also possible to investigate the gray scale level of the pixels in the area of the electrode pad 2, And generate the gray level as the horizontal axis,  The number of pixels as a histogram of the vertical axis, According to the shape of the peak of the histogram, etc., To decide the threshold.  After all the stitch areas 13 have been detected, As shown in the flow chart of Figure 5, First of all, As shown in Fig. 10(a), the B component data D4 t is gray-scale transformed. And B gray scale data D41 is obtained (step S21). Then, The material corresponding to the area of the stitch area 13 is cut out by the B gray scale data D41, And the B stitch region 13b is generally obtained as shown in Fig. 10(b), Further, from the B stitch region 13b, a histogram in which the gray scale level is taken as the horizontal axis and the number of pixels is taken as the vertical axis as shown in Fig. 11 (a) is generated (201009973 will be gray).  Like 1 to draw the middle of C (the middle of the picture)  After the position of the quasi-figure, the gray is straight. } The production of the 22th S is in the range of the first step. The range in which the region between the underlying layer 6 and the electrode pad 2 is divided according to the difference in reflectance between the copper of the underlying layer 6 and the aluminum of the electrode pad 2 is That is, as the detection range of copper, And set the range of gray scale levels, In this embodiment, The range of gray scale level φ is between 70 and 100, It is set as the above range. Then, From the histogram C, all the peaks present are detected by a well-known method (step S23).  In this embodiment, Use aluminum at electrode pad 2, And use copper at the base layer 6, therefore, In the B component data D4, The relative reflectance of the exposed region 11 exposed by the base film 6, Compared to the relative reflectivity of the electrode spacer 2, The system becomes lower, And compared to the area of the electrode pad 2, The exposed area 11 is imaged to be dark. Therefore, In the B gray scale data D41, When the exposed area 11 is formed, Exposing the gray level of the area 11, Compared to the area of the electrode pad 2, The system becomes lower. also, In the B gray scale data D41, Copper gray level, Since the system falls within the range of the gray scale level corresponding to the detection range of copper described above, Because of five,  If a histogram is generated in a state in which an exposed region is formed, The number of pixels corresponding to the gray level of the exposed area 11 is increased. And in the histogram C, Characteristically For example, it is significantly larger than the other peaks (step S24). Therefore, When this characteristic peak 値 is detected, It is then known that the exposed area 11 is formed.  -23- 201009973 The detection of this characteristic peak, By well-known methods (for example,  Low pass filtering processing, etc.) is performed. and, When a characteristic peak is detected, For example, when the peak 値 P 1 shown in Fig. 11 (b) is detected, Then, the peak of the peak P1 and the gray level of the end point P3, This is set as the upper limit and the lower limit of the threshold 时 when the B stitch region 13b is doubled (step S25). In addition, When the peak 値 P1 corresponding to the exposed area 11 cannot be found, For the electrode pad 2 corresponding to the B stitch region 13b in the detection, It is judged that there is no exposed area 11 And abort the test, And the information is memorized in the RAM 42 (step S30). If the range of the threshold is set, Then, as shown in Figure 10(c), According to the scope of the threshold, And the B stitch area 13b is doubled,  The pixel of the gray scale level in the threshold of the pixel of the B stitch region 13b is set to "〇", The pixel of the gray scale level outside the threshold is set to "1". then, The area of the pixel of the exposed area 11 exposed by the copper and the area of the pixel within the threshold 为 are black, And other areas are white B dilatation data D42, This data is memorized in the RAM 42 (step S26). after that,  Repeating the above steps S21 to S24, And detecting the peak P1 for all the electrode pads 2, And obtaining the B-differentiation data S42 of the electrode pad 2 of each of them, The data is stored in the RAM 42.  So obtained the B dilation data D42, There will be a grayscale level corresponding to the edge of the stitch 10 or the shadow of aluminum in the range of the gray level. As a result, Not only the exposed area of copper 11, Even the areas corresponding to the shadows, It will also be expressed as -24- 201009973 "〇" (black pixels). therefore, In order to divide these areas, It is set to use the R component data D2 memorized in the RAM 42 that has been included, A masking process for additional masking for the aforementioned shadows. That is, First of all, As shown in Figure 12 (refer to Figure 21 described later), Divide the R component data D2, The mask data D21 is obtained (step S27). In Figure 12, 10a is the shadow of the edge, The 12 series is the shadow of the shavings. In the R component data D2, The relative reflectivity of the aluminum of the electrode pad 2 and the copper of the base φ bottom layer 6 is not due to the difference. therefore,  The exposed area 11 is captured as brighter. Only the shadow of the edge portion 10a or the shadow 12 of the chip is photographed as being dark. therefore, If the mask data D21 is obtained, Then as shown in Figure 12, Only pixels corresponding to the shadow portion will become 0. The other parts of the pixel are 1 ° for this mask D21, And as usual, the stitch area 13 is cut out, And use the cut mask material D21, In order to mask the b. In other words, the pixel of "B" of the B binary data D42 overlapping with the pixel of the "0" of the mask data D21 is replaced with "1" (step S28). If handled by this, It is equivalent to removing the black area corresponding to the shadow l〇a of the edge portion or the shadow 12 of the chip from the black area in the B binary data unit 42 shown in FIG. the result, The image is obtained by obtaining the stitching region 11 of the copper as the stitching region E of the black region 13. This portrait material, This is called the exposure location specific material 15. then, This reveals location specific information 15, It is stored in the RAM 42 (step 29). then, Steps S25 to S27 are repeatedly performed,  -25- 201009973 and masking all B binary data D42, And obtain the exposed position specific data 15 after the mask processing, The data is then stored in RAM42.  Then, information relating to the stitches 10 corresponding to the respective electrode pads 2 is read out from the RAM 42, For a 1C wafer containing an electrode pad 2 in which the stitch 10 is not present, For example, an additional re-inspection display, On the other hand, the number of pixels including the exposed area of copper as the exposed area of the exposed position specific material 15 exceeds the number of pixels of the electrode pad 2 set in advance. For example, for a wafer 1 in which one or more "〇" pixels are present, Then, the information that the stitch 10 is a deep excavation or the like is attached to the wafer 1. And stored in RAM42. If it is an example of the treatment after obtaining such information, Then, for the electrode pad 2 that is judged to be deep digging, The operator may also display an image of the electrode pad 2 as an example in which the RGB component is mixed, on the display unit.  And the operator will confirm whether the judgment of the deep excavation is appropriate ’ and if the final system is judged to be deep excavation, Then, the wafer 1 including the electrode pad 2 is treated as a defective product. also, Needless to say, It may not be confirmed by such an operator. The result of the stitch inspection can also be For example, it is displayed on the display portion in association with the position of the wafer 1 on the wafer W, And for example, at each wafer 1, A color assignment or the like corresponding to the result is performed.  In addition, In this embodiment, And the step S1 is performed by the RGB component acquisition unit 5 Step S2 corresponds to the project, The stitching area extracting unit 51 performs the work corresponding to steps S3 to S7, The B component histogram acquisition unit 52 performs steps S21 to S25, And the corresponding project of 201009973 step S30, The project corresponding to step S26 is performed by the component B dimerization unit 53, The work corresponding to steps S27 to S29 is performed by the mask processing unit 54.  The probe device of the embodiment described above, When performing the inspection of stitch 10, Get the camera data D1 as color data, And the R component data D2 extracted from the image data D1 G component data D3, B component data D4, The difference between the relative φ reflectance of the light of the aluminum as the material of the electrode pad 2 and the relative reflectance of the light of the copper which is the material of the underlying layer 6 becomes the maximum component B data D4. It is selected as the basis for the determination of the exposure of the underlayer. then, The stitch area 13 is cut out from the B component data D4, And generating a histogram between the gray level and the number of pixels, Further, from the histogram, the peak 値 P1 in the range of the gray scale level corresponding to the copper of the base layer 6 is detected. And the gray scale level corresponding to the peak 値 1 is taken as the range of the threshold. And obtain B dilation data D 42. and then, By performing mask processing using the R component data D2, The area corresponding to the shadow 12 of the chip is removed. Therefore, The deep digging of the spacer 2 caused by the probe 33 (the state of being dug up to the base layer 6) can be automatically and quickly detected with high accuracy. Moreover, the burden on the operator can be greatly reduced. also, Since the stitching can be performed in the probe device, There is no need to carry out the work of transporting the substrate W into the work area of the metal microscope by the operator as in the prior art. Therefore, it is possible to quickly grasp the abnormality of the probe or the abnormality of the overdrive.  also, In this embodiment, Extracted R from the camera data D1 -27- 201009973 points D2 G component data D3, B component data D4, And use the R component data D2 in the mask processing. The component data d3 is used in the stitching detection process, and the component B data D4 is used in the base layer exposure determining process. Therefore, the information on the actual processing, Compared to the image data D1', the amount of data is reduced. Therefore, It is possible to improve the efficiency of each process.  In the above embodiment, For the B dilatation data D42, Applying masking treatment using R component data D2, therefore, There is an advantage that the edge of the stitch 10 or the shadow of the aluminum chip can be separated from the exposed area of the copper. but, As an embodiment of the present invention, It is also possible to not perform mask processing. In this case, For example, the area (the number of pixels) of the shadow area of the aluminum chip or the like can be determined in advance based on the experimental data, and the number of pixels in the shaded area from the number of pixels in the black area in the binary data D42 is used. After subtracting the information, To determine the presence or absence of the exposed area of copper. Further, in the above embodiment, When each time the electrode pad 2 is photographed, For the component data D4, the histogram shown in Fig. 7 is obtained. And ask for the threshold of the gray level. but, For example, the aforementioned threshold 亦可 may be separately obtained for each type of the wafer W, And stored in RAM42, In response to the type of wafer W that is the object of the stitch inspection, To read out the threshold, And use this threshold to create the binary data of component B. then, In the second data of the B component,  To remove pixels such as shadows of the chip of the electrode pad, And explore the data of the B component. And by discovering the pixel of "〇", To determine the presence or absence of the exposed area.  -28- 201009973 However, according to the histogram shown in Figure 7, the threshold is taken out,  Because it is a higher pixel than the threshold, the gray level is That is, the pixel corresponding to the exposed area of copper is used as the extractor. therefore, For example, it is not possible to make binary data based on this threshold. And counting the number of pixels whose gray level is higher than the threshold. By this count,  The number of pixels previously set for the area corresponding to the edge of the stitch 10 or the shadow of the aluminum is subtracted, And based on the number of pixels obtained, To determine the presence or absence of the exposed area of copper. also, You can also not use the number of pixels, And the area coordinates are used to find the area of the area where the gray level is high. The presence or absence of the exposed area of copper is determined by the area of the area.  also, this invention, From r, G, Among the components of B, Depending on the difference in reflectivity between the material of the electrode pad and the material of the base layer, And choose the right ingredients, That is, Choose to have a specific grayscale level for the material of one of the parties, The system does not overlap with the gray level of the material of the other party. And the wavelength component of the difference in reflectance that can effectively separate the two, And detecting the exposed area of the base layer as described above, therefore, The material of the electrode pad or the material of the base layer. Department is not limited to copper, aluminum, As long as it depends on the materials used, And for R,  , The image of any component of B can be used. herein, The stitch detecting device of the present invention, The system is not limited to being set in combination with the probe device. It can also be constructed as a stand alone. also, In this embodiment, Although the G component is used in the detection of the stitch area, but, As an embodiment of the present invention, As long as it is capable of performing the specificity of the gasket area, Detection of the stitch area,  -29- 201009973 and the determination of the exposure of the base layer, It can also be constructed as a material that uses only a single color component. For example, only use the information of component B, And the specific area of the gasket and the detection of the stitch area, There is also a histogram of the stitching area, And judge whether there is any exposure.  [Second Embodiment] The present invention, To obtain a color portrait of the electrode pad, And obtain the R corresponding to the portrait, G, a portrait of the B component, Using the information of each component, The difference between the reflectance of the electrode pad and the reflectance of the base film is the largest component information among the components. A stitch inspection device for the exposed area is detected. Therefore, a means of imaging the wafer W, The camera 72 is not limited to the first embodiment. E.g, It is also possible to additionally set a dedicated camera at a location different from the upper camera 72. For example, it is placed on the head plate, etc. also, As a means of imaging, It is not limited to being able to obtain R, as in the case of the upper camera 72. G, Color camera of color portrait of component B, E.g, Can also be used to obtain R,  G, a combination of three cameras of the respective components of B, To form a camera.  From the above, It can be seen that as an embodiment of the present invention, It may be in the form as shown in the second embodiment described below. In the probe device of the second embodiment, As shown in Figure 14, in general, The R camera 73a, which is only used to acquire the imaging data of the R component, A camera unit 201009973 兀73' configured to combine only the G camera 73b for acquiring the imaging data of the G component and the B camera 73c for acquiring the imaging data of the B component is disposed at the head plate 30' and passes through the camera. Unit 73,  On the other hand, the image of the probe 33 and the electrode pad 2 immediately after contact with the probe card 32 is imaged. And 'camera unit 73, There is a lighting means 28a. And the camera unit 73, When imaging the wafer w,  I did not get the camera data D 1, Instead, the R component data D2 is obtained by each of the cameras 73 a to 73 c. G component data D3, B component data D4. In such an embodiment, Also, the B component data D4 is selected as the base layer. For example, the same processing as in the first embodiment can be performed.  In the present embodiment, When imaging the wafer W, It is not necessary to retract the head plate 30 in order to move the upper camera 72. And become able to test after the probe, Immediately by the camera unit 73, each component data D2 to D4 is obtained. And detecting the exposed area 11 and its position, therefore, It is able to improve inspection efficiency. In addition, In this embodiment, Can also be set to: A filtering unit is provided at each of the cameras 73a to 73c φ of the camera unit 73, And according to the R component at the material of the base layer 6, G component, The threshold for extraction set by the reflectance of the light of component B,  To filter, Only the pixels within the range of the gray scale levels of the components corresponding to the material of the base layer 6 are extracted. And get the data D2 ~ D4. also,  Camera unit 73, Since the data D2 to D4 of the RGB components are respectively imaged by the respective cameras 73a to 73c, Therefore, It is also possible to make the RGB component data D2 to D4 vividly imaged by the respective cameras 73a to 73c. To adjust the luminosity of the components of the light of the illumination means 28, The imaging timings of the respective cameras 73a to -31 - 201009973 73c are shifted.  [Third embodiment] As an embodiment of the present invention, The system may be in the form as shown in the third embodiment described below. In the probe device of the third embodiment, instead of the upper camera 72 and the illumination means 28 provided in the first embodiment, The camera 72m is obtained by using the image data D1 as a monochrome image as shown in FIG. Further, there is provided an r illumination means 28r which is used to illuminate the wafer W, for example, by a light-emitting diode. G lighting means 28g, B illumination means 28b. R lighting means 28r is red light, G lighting means green light, The B illumination method illuminates the wafer W with blue light. By this, At the upper camera 72m, it is possible to obtain only and from each illumination means 28r, 28g, Image data of the components corresponding to the light illuminated by 28b, therefore, The same as in the second embodiment, Be able to obtain R component data individually D2 G component data D3, B component data D4. In the above-described embodiment, the B component data D4 is also selected as the basis for determining the exposure of the underlying layer. For example, the same processing as in the first embodiment can be performed. also,  In this embodiment, Is only required for the R lighting means 28r, G illumination means 28g, The intensity of the light of the B illumination means 28b is adjusted, The RGB component data D2 to D4 can be vividly captured.  The above has been described with respect to various embodiments of the present invention. However, the present invention is not limited to the above embodiments. E.g, As shown in Fig. i6, the general 'exposed position specific portion 52' can also be generated when the histogram is generated -32-201009973, The histogram is made based on the standard sample hi' corresponding to the gradation level of the basal layer 6 in the B gray scale data D4 1 which has been previously prepared, using the maximum induction method or the like from the prior art. Smoothing ' absorbs the deviation of the gray level. By this, it is possible to change the shape of the copper of the underlying layer 6 or the shape of the stitch 1 、, The deviation of the gray scale level generated by the upper camera 72 and the angle or luminosity of the illumination means 28 is absorbed. therefore, For example, when the image forming means capable of obtaining color data is used, the copper of the substrate, for example, is discolored due to oxidation, Or the camera data depends on the light source, so that the camera data itself has changed. The result is a change in the observation of the color and a problem of the magnitude of the deviation in the data. It is possible to respond. and, Further, the accuracy of the detection of the exposed region 11 by the control unit 4 of the present embodiment and the position thereof can be further improved.  [Embodiment] Next, For the specific application method of the probe device having the stitch inspection device of the present invention, Refer to Figure 17, Figure 18 is for illustration. First of all , As the first application method, as shown in the flow of Fig. 17, The probe 33 is brought into contact with the electrode pad 2, And performing the initial probe test (step S31)' and after the probe test is finished, By being on the camera means camera 72 or camera unit 73 (below, It is simply referred to as "imaging means" to "photograph the entire inspection area of the wafer w" and acquire the imaging material D1 (step S32). then, At the image extracting portion 50, The G component data 〇3 is extracted from the imaging data D1. The stitch 1 检测 is detected by the G component data D3 - 33 - 201009973 (step S3 3). After the stitch inspection, For example, for the tolerance of the pixel at 1 of the stitch 10, the electrode pad 2 which is formed with a stitch having a pixel exceeding the allowable number of 1 is determined. That is, it is possible to extract the electrode pad 2 formed with the exposed region 11 (step S34).  then, Only the electrode pad 2 that has been taken out is imaged by the imaging means (step S35), And obtained a new B component data D4, R component data D2, And by exposing the location specific portion 52, The mask processing unit 53 performs processing, It is determined whether or not the exposed region 11 is formed at the electrode pad 2 (step S36). If you use this method, Then, since it is known at the outset that the probe 33 is in contact with the electrode pad 2 so as to make the exposed region 11 strong, therefore, It is possible to prevent the situation in which the base layer of copper is adhered to the electrode pad 2 in the subsequent test, also, It also becomes a fine adjustment of the contact position between the probe 33 and the electrode pad 2 〇 Next, As a second method of operation, As shown in the flow of Figure 18, After the probe test is over, The results of the probe tests for all of the wafers 1 were investigated. During the probe test, When the front end of the probe 33 reaches the base layer 6, The results of the probe test are due to fall within the range of the previously established BIN. therefore, The position of the wafer 1 is detected (step S41). then, The imaging method is used for the wafer!  The electrode pad 2 is imaged (step S42), The stitch position is specified from the G component data 〇3 by the stitch position specifying portion 50. (Step S43). Then 'by the same method as step S34, The electrode pad 2 having the possibility of forming the exposed region 11 by 201009973 is extracted (step S44),  And from the B component data D4, R component data D2, By exposing the location specific part 52, The mask processing unit 53 performs processing. It is also determined whether or not the exposed region 11 is formed at the electrode pad 2 (step S45). If by this method of use, Because the result can be tested by the probe, Only the wafer 1 having the possibility of forming the exposed region 11 at the electrode pad 2 is inspected, therefore, It can improve inspection efficiency.  φ Next, An experiment conducted to confirm the effect of the present invention will be described. First of all, As the first experiment, The probe device of the first embodiment is used. And imaging the wafer W by the upper camera 72, Further, for example, the image data D1 which is divided into 39 pieces corresponding to the wafer W is obtained. then, The wafer W is visually observed by a metal microscope. An image in which the pixels of the exposed area 11 are replaced by "〇" and the pixels other than the pixels are replaced by "1" are generated. That is, the so-called Ground Truth portrait produced by human beings through the eyes (hereinafter, Simply called GT portrait), Further, for example, 75 electrode pads 2 are selected as samples. then, The number of electrode pads 2 in which the exposed regions 11 are formed, which are detected from the GT image, The detection accuracy of the exposed area 1 1 was investigated by comparing the image data D1 by the result detected by the control unit 4. In addition, in the experiment, In the 75 electrode pads 2 used as the sample, the exposed regions 11 are formed at 53 electrode pads 2. The results of this first experiment are shown in Table 1.  In the first experiment, As shown in Table 1 below, For the electrode pad 2 to which the exposed region 11 is formed, All the departments detected that they were formed by the -35-201009973 with exposed areas11. On the other hand, 'there are 22 electrode pads for which 22 regions of the exposed regions 11 are not detected, and for 4 electrode pads, It is erroneously detected that the exposed area 11 is formed. After investigating the actual object on the electrode pad 2 which was misdetected, the reason was found to be: At the electrode pad 2, There is a very small portion of the pixel unit to which the copper of the base layer 6 is attached. This part was misidentified as the exposed area 11. In other words, At the control unit 4, For the electrode pad 2 with a fine copper that cannot be detected by a metal microscope, It is also possible to detect this as having the exposed area 11. When copper is attached to the electrode pad 2, Since there is a problem that adversely affects the electrical characteristics of the wafer 1, therefore, Regarding this kind of wafer 1, Become a defective product, This matter, It can be known that The stitch inspection device of this embodiment, The detection accuracy of the exposed area 11 is extremely high. and then, A wafer 1 which is a defective product that cannot be detected by a metal microscope or the like, It can also be judged as a defective product. also,  Because the system is capable of detecting small copper, therefore, It is also possible to perform contamination inspection of the probe 33. also, As a method of suppressing this misidentification and detecting only the exposed surface, In the detection of the exposed position caused by the binarized image, "by setting a margin that excludes a portion below a certain area", it is possible to obtain a correct result of 100%.  [Table 1] GT image detected as exposed portion detected as no exposed portion exposed portion 53 0 no exposed portion 4 18 201009973 Next, As the second experiment, Using the probe device of the first embodiment, And the detection of the exposed area 11 is performed for the electrode pad 2 on the wafer W for 1 minute. Investigate that it is possible to check several electrode pads 2 for inspection. also, As a comparison object, The same wafer W is inspected using a metal microscope or the like as in the prior art. Investigate about the ability to inspect several electrode pads 2 for inspection. At the control unit 4 of the probe device, φ is obtained from the acquisition of the image data D1 until it is detected for one of the electrode pads 2, and it is determined whether or not the exposed region 11 is formed. The average system requires about 45mSec. and, In the control unit 4 of the present embodiment, In the acquisition of the camera data D1, etc. Since the system takes 15 seconds, therefore, In between 1 minute, The detection of the exposed region 11 can be performed for the 1000 electrode pads 2.  on the other hand, In the detection by the prior art metal microscope,  In order to detect and determine whether or not the exposed region 11 is formed for the electrode pad 2 of 1, The average upper system needs about 200~500mSec, And it takes time in the positioning of the wafer Φ W, etc. therefore, In between 1 minute, It can only be tested for 20 electrode pads 2. Plus, In this detection method, Due to fatigue or concentration of the operator, Check the individual's ability to differ, And the inspection time has changed, therefore, To always test at a certain speed for a long time and continuously, It is impossible. In contrast, In the probe device of this embodiment, Since the detection is performed via the control unit 4, therefore, It is capable of detecting for a long time and continuously. also, In terms of detection speed, Compared with the inspection by a metal microscope, it can also be performed at a speed of about 500 times -37-201009973. therefore, The system can greatly improve the inspection efficiency. From the results of the above two experiments, It can be known that The stitch inspection device of this embodiment, Compared with the prior art inspection using a metal microscope or the like, It is excellent in both accuracy and inspection speed.  then, With respect to the detection of the stitch 10 performed by the stitch inspection device of the first embodiment, Referring to the actual imaging material of the wafer W, it is explained. First of all, As shown in Figure 19, Carry out with step si,  Step S2 corresponds to the project, And get the camera data D1, And obtain the R component data D2 from the imaging material D1. G component data D3, Component B information D4. then, As shown in Figure 20, Going with step S3, Step S4, Step S5, Step 6, Step 7 corresponds to the project, And the gray scale data D31 is obtained from the G component data D3 shown in Fig. 20 (a). And explore the pixels, Using the matching pattern T1 shown in Fig. 20(b),  To detect the area of the electrode pad 2. then, If the area of all the electrode pads 2 is detected as shown in Fig. 20(c), Then, the process of dimming the area of the electrode pad 2 and detecting the stitch area 13 as shown in Fig. 20(d) is performed, and then If the process from step S21 to step S26 is performed, And obtained the B dilation data D42, Then, as shown in FIG. 21,  Carry out the work of step S27, And distilling the R component data D2, And get the mask data D21, According to the mask data D21, the mask processing described above is performed. The presence or absence of the exposed area 11 and the location are specified. By performing the above process, in the stitch inspection device of the present embodiment, Performing detection of the stitch area 13 corresponding to the stitch 10, Exposed area 11 -38- 201009973 And the location of the exposed area 11 is specific.  BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic plan view of a probe device according to an embodiment of the present invention. FIG. 2 is a schematic plan view of a wafer W according to the present embodiment.  Fig. 3 is a schematic cross-sectional view showing a wafer W of the present embodiment.  φ [Fig. 4] A first flow for explaining the detection processing procedure of the stitch inspection device of the present embodiment.  (Fig. 5) A second flow for explaining the detection processing procedure of the stitch inspection device of the present embodiment.  Fig. 6 is a first explanatory diagram for explaining a detection processing procedure of the stitch inspection device of the embodiment.  Fig. 7 is an explanatory diagram for explaining a method of selecting data used in the stitch inspection of the embodiment.  [Fig. 8] A second explanatory diagram for explaining the detection processing procedure of the stitch inspection device of the present embodiment. Fig. 9 is a third explanatory diagram for explaining the detection processing procedure of the stitch inspection device of the present embodiment.  Fig. 10 is a fourth explanatory diagram for explaining the detection processing procedure of the stitch inspection device of the embodiment.  [Fig. 11] A fifth explanatory diagram for explaining the detection processing procedure of the stitch inspection device of the present embodiment.  Fig. 12 is a sixth explanatory diagram for explaining the procedure of the detection processing of the stitch inspection device of the present embodiment -39-201009973.  Fig. 13 is a seventh explanatory diagram for explaining the detection processing procedure of the stitch inspection device of the embodiment.  Fig. 14 is a schematic view showing the configuration of a probe device according to a second embodiment of the present invention.  Fig. 15 is a schematic view showing the configuration of a probe device according to a third embodiment of the present invention.  Fig. 16 is an explanatory view showing a stitch inspection method according to another embodiment of the present invention.  [Fig. 17] A first flow for explaining an embodiment of the present invention.  [Fig. 18] A second flow for explaining an embodiment of the present invention.  [Fig. 19] A first explanatory diagram [Fig. 20] for explaining an embodiment of the present invention for explaining an embodiment of the present invention (Fig. 21) for implementing the present invention A third explanatory diagram (Fig. 22) for explaining the problem in the prior art stitch inspection apparatus will be described.  Fig. 23 is a second explanatory diagram for explaining a problem in the stitch inspection device of the prior art.  [Main component symbol description] 1 : Wafer -40- 201009973 2 : Electrode gasket 4 : Control 6 : Base layer I 0 : Stitch l〇a : Shadow of the edge II : Exposed area 1 2 : Shadow of the chip φ 1 3 : Stitch area 1 3 b :  B stitch area 1 5 : Exposing location specific information 21 : 1st platform 22 : 2nd platform 23 : 3rd platform 24 : Top of the suction cup 28 28a: Lighting means • 28b :  B lighting means 28g :  G lighting means 28r :  R lighting means 30: Head plate 33 : Probe

34 :攝像機搬送部 41 ： RAM 45 :探針探查用程式 46 :針跡檢查用程式 -41 201009973 50 : RGB成分取得部 51:針跡區域抽出部 52: B成分直方圖取得部 5 3 : B成分二値化部 54 :遮罩處理部 72、72m :上攝像機（攝像手段） 73:攝像機單元（攝像手段群） 73a: R攝像機（R成分攝像手段） 73b: G攝像機（G成分攝像手段） 73c: B攝像機（B成分攝像手段） D 1 :攝像資料 D2 : R成分資料 D 3 : G成分資料 D4 : B成分資料 D21 :遮罩資料 D31 : G灰階資料 D 3 2 : G二値化資料 D41 : B灰階資料 D42 : B二値化資料 P 1 :峰値 W :晶圓 -42-34 : Camera transport unit 41 : RAM 45 : Probe search program 46 : Stitch check program - 41 201009973 50 : RGB component acquisition unit 51 : Stitch area extraction unit 52 : B component histogram acquisition unit 5 3 : B Component dimerization unit 54: mask processing unit 72, 72m: upper camera (imaging means) 73: camera unit (imaging means group) 73a: R camera (R component imaging means) 73b: G camera (G component imaging means) 73c: B camera (B component camera) D 1 : Camera data D2 : R component data D 3 : G component data D4 : B component data D21 : Mask data D31 : G gray scale data D 3 2 : G binary Information D41: B Grayscale Data D42: B Dilatation Data P 1 : Peak 値 W: Wafer-42-

Claims (1)

201009973 七、申請專利範園： 1. 一種針跡檢查裝置，係在使探針接觸被檢查基板 上之電極墊片並進行了電性測定後，對被形成在前述電極 墊片上之針跡作攝像，並對於電極墊片之基底層的露出之 有無作檢査的針跡檢查裝置，其特徵爲，具備有： 取得從身爲色彩成分之R成分、G成分以及B成分中 而因應於電極墊片之材質與基底層之材質間的反射率之差 φ 所選擇了的色彩成分之畫像資料之手段；和 從藉由此手段所取得之畫像資料，而求取出：爲了和 電極墊片作區別地取得基底層之畫像而設定之灰階準位、 和具備有此灰階準位之像素數，其兩者間的關係資料之手 段；和 根據藉由此手段所求取出之關係資料，來對於在針跡 處之基底層的露出之有無作判定之手段。 2. 如申請專利範圍第1項所記載之針跡檢査裝置， 0 其中，前述取得被選擇了的色彩成分之畫像資料之手段， 係具備有下述手段中之任一者：將包含有R成分、G成分 以及B成分之色彩成分的畫像作取得之彩色攝像機、或是 僅取得所選擇了的色彩成分之攝像機、或者是僅照射被選 擇了的色彩成分之光之照射手段。 3. 如申請專利範圍第1項或第2項所記載之針跡檢 査裝置，其中，係更進而具備有： 根據前述被選擇了的色彩成分之畫像資料，而設定前 述灰階準位，同時’對該當畫像資料進行二値化處理，而 -43- 201009973 取得用以進行基底膜露出區域之檢測的二値化畫像資料之 手段， 前述關係資料，係爲此二値化畫像資料。 4. 如申請專利範圍第1項乃至第3項中之任一項所 記載之針跡檢查裝置，其中，前述灰階準位，係爲根據前 述被選擇了的色彩成分之畫像資料，而作成對於在預先所 設定之範圍內的灰階準位與像素數間之關係作表現的直方 圖，並根據此直方圖而作了設定者。 5. 如申請專利範圍第1項乃至第4項中之任一項所 記載之針跡檢查裝置，其中，電極墊片之材質係爲鋁，基 底層之材質係爲銅，被選擇了的色彩成分係爲B成分。 6. 如申請專利範圍第3項所記載之針跡檢查裝置， 其中，係具備有： 由在R成分、G成分以及B成分中之將前述被選擇了 的色彩成分作了除去後者之中，來取得因應於電極墊片之 切削屑之陰影與基底層之材質間的反射率之差異所選擇了 的色彩成分之畫像資料，並將對此畫像資料進行了二値化 之二値化畫像資料作爲遮罩資料，來對於用以進行基底膜 露出區域之檢測的二値化畫像資料，而進行用以將對應於 電極墊片之切削屑之陰影的像素作除去之遮罩處理之手段 〇 7. 如申請專利範圍第6項所記載之針跡檢査裝置， 其中，電極墊片之材質係爲鋁，基底層之材質係爲銅，爲 了遮罩資料而被選擇了的色彩成分係爲R成分。 -44 - 201009973 8·如申請專利範圍第6項或第7項所記載之針跡檢 査裝置’其中’基底層之材質係爲銅，前述爲了用以進行 基底層露出區域之檢測的二値化畫像資料而被選擇了的色 彩成分，係爲Β成分。 9.如申請專利範圍第1項乃至第8項中之任一項所 記載之針跡檢査裝置，其中， 將被選擇了的色彩成分之畫像資料作取得之手段，係 φ 構成爲：取得由在R成分、G成分以及β成分中之將前述 被選擇了的色彩成分作了除去後者之中所選擇了的色彩成 分之畫像資料’並從此畫像資料中而將對應於針跡區域之 畫像資料切出’再根據此切出了的畫像資料，來進行後續 之處理。 1 〇·如申請專利範圍第9項所記載之針跡檢査裝置， 其中，電極墊片之材質係爲鋁，基底層之材質係爲銅，爲 了對於針跡區域而將畫像資料切出所被選擇了的色彩成分 • ，係爲G成分。 11. 一種探針裝置，係爲將基板載置於探針卡與載置 台上，並使探針卡之探針與基板上之晶片的電極墊片相接 觸，而進行晶片之電性測定的探針裝置，其特徵爲： 具備有如申請專利範圍第1項乃至第10項中之任一 項所記載之針跡檢査裝置。 12. —種針跡檢査方法，係在使探針接觸被檢査基板 上之電極墊片並進行了電性測定後，對被形成在前述電極 墊片上之針跡作攝像，並對於電極墊片之基底層的露出之 -45- 201009973 有無作檢査的針跡檢查方法， 其特徵爲，具備有： 取得從身爲色彩成分之R成分、G成分以及B成分中 而因應於電極墊片之材質與基底層之材質間的反射率之差 所選擇了的色彩成分之畫像資料之工程；和 對於藉由此工程所取得之畫像資料，而求取出：爲了 和電極墊片作區別地取得基底層之畫像而設定之灰階準位 、和具備有此灰階準位之像素數，其兩者間的關係資料之 @ 工程；和 根據藉由此工程所求取出之關係資料，來對於在針跡 處之基底層的露出之有無作判定之工程。 13. 如申請專利範圍第12項所記載之針跡檢查方法 ，其中，係更進而具備有： 根據前述被選擇了的色彩成分之畫像資料，而設定前 述灰階準位，同時，對該當畫像資料進行二値化處理，而 取得用以進行基底膜露出區域之檢測的二値化畫像資料之 @ 工程， 前述關係資料，係爲此二値化畫像資料。 14. 如申請專利範圍第12項或第13項所記載之針跡 檢查方法，其中，前述灰階準位，係爲根據前述被選擇了 的色彩成分之畫像資料，而作成對於在預先所設定之範圍 內的灰階準位與像素數間之關係作表現的直方圖，並根據 此直方圖而作了設定者。 15. 如申請專利範圍第12項乃至第14項中之任一項 -46 - 201009973 所記載之針跡檢查方法，其中，電極墊片之材質係爲鋁， 基底層之材質係爲銅，被選擇了的色彩成分係爲B成分。 16. 如申請專利範圍第12項或第13項所記載之針跡 檢查方法，其中，係具備有：由在R成分、G成分以及B 成分中之將前述被選擇了的色彩成分作了除去後者之中， 來取得因應於電極墊片之切削屑之陰影與基底層之材質間 的反射率之差異所選擇了的色彩成分之畫像資料，並將對 φ 此畫像資料進行了二値化之二値化畫像資料作爲遮罩資料 ，來對於用以進行基底膜露出區域之檢測的二値化畫像資 料，而進行用以將對應於電極墊片之切削屑之陰影的像素 作除去之遮罩處理之工程。 17. 如申請專利範圍第16項所記載之針跡檢査方法 ，其中，電極墊片之材質係爲鋁，基底層之材質係爲銅， 爲了遮罩資料而被選擇了的色彩成分係爲R成分。 18. 如申請專利範圍第16項或第17項所記載之針跡 ® 檢査方法，其中，基底層之材質係爲銅，前述爲了用以進 行基底層露出區域之檢測的二値化畫像資料而被選擇了的 色彩成分，係爲B成分。 19. 如申請專利範圍第12項乃至第18項中之任一項 所記載之針跡檢查方法，其中，將因應於前述電極墊片之 材質與基底層之材質間的反射率之差所被選擇了的色彩成 分之畫像資料作取得之工程，係包含有： 取得由在R成分、G成分以及B成分中之將前述被選 擇了的色彩成分作了除去後者之中所選擇了的色彩成分之 -47- 201009973 畫像資料，並從此畫像資料中而將對應於針跡區域之畫像 資料切出之工程， 並根據此切出了的畫像資料，來進行後續之處理。 2〇_如申請專利範圍第1 9項所記載之針跡檢查方法 ’其中’電極墊片之材質係爲鋁，基底層之材質係爲銅， 爲了將對應於針跡區域之畫像資料切出所被選擇了的色彩 成分，係爲G成分。 21. —種記憶媒體’係爲儲存有在針跡檢查裝置中所 被使用之電腦程式的記憶媒體，該針跡檢查裝置，係在使 探針接觸被檢査基板上之電極墊片並進行了電性測定後， 對被形成在前述電極墊片上之針跡作攝像，並對於電極墊 片之基底層的露出之有無作檢查， 該記憶媒體，其特徵爲： 前述電腦程式，係以實行如申請專利範圍第12項乃 至第20項中之任一項所記載之針跡檢查方法的方式，而 被構成步驟群。 -48-201009973 VII. Application for Patent Park: 1. A stitch inspection device for stitches formed on the electrode pads after the probes are brought into contact with the electrode pads on the substrate to be inspected and electrically measured. A stitch inspection device for detecting whether or not the base layer of the electrode pad is exposed is characterized in that: the R component, the G component, and the B component are obtained from the body as a color component, and the electrode is applied to the electrode. The difference between the reflectance between the material of the spacer and the material of the underlayer φ means of the image data of the selected color component; and the image data obtained by the means, and taken out: for the electrode pad a grayscale level set to obtain a portrait of the base layer differently, and a means for having a relationship between the number of pixels having the grayscale level and the relationship between the two; and the relationship data obtained by the means, The means for determining the presence or absence of the exposure of the substrate layer at the stitching. 2. The stitch inspection device according to the first aspect of the patent application, wherein the means for obtaining the image data of the selected color component is provided by any one of the following means: A color camera that obtains a portrait of the component, the G component, and the color component of the component B, or a camera that obtains only the selected color component, or an illumination device that illuminates only the selected color component. 3. The stitch inspection device according to the first or second aspect of the invention, wherein the stitch inspection device further includes: setting the gray scale level based on the image data of the selected color component; 'The image data of the image was subjected to two-dimensional processing, and -43-201009973 obtained the means for performing the image processing of the image of the exposed area of the basement film, and the above-mentioned relationship data was used for the image data. 4. The stitch inspection device according to any one of the preceding claims, wherein the gray scale level is created based on the image data of the selected color component. A histogram showing the relationship between the gray scale level and the number of pixels in a range set in advance, and setting the basis based on the histogram. 5. The stitch inspection device according to any one of claims 1 to 4, wherein the electrode pad is made of aluminum, and the base layer is made of copper, and the selected color is selected. The component is the component B. 6. The stitch inspection device according to the third aspect of the invention, wherein the selected color component is removed from the R component, the G component, and the B component, The image data of the color component selected in response to the difference in reflectance between the shaving of the electrode shim and the material of the underlying layer is obtained, and the image data of the image data is divised. As a mask material, a masking process for removing pixels corresponding to the shadow of the chip of the electrode pad is performed for the binarized image data for detecting the exposed area of the base film. The stitch inspection device according to the sixth aspect of the invention, wherein the material of the electrode pad is aluminum, the material of the base layer is copper, and the color component selected for masking the material is the R component. . -44 - 201009973 8. The stitch inspection device as described in the sixth or seventh aspect of the patent application, wherein the material of the base layer is copper, and the foregoing is for the purpose of detecting the exposed area of the base layer. The color component selected for the image data is a Β component. 9. The stitch inspection device according to any one of claims 1 to 8, wherein the image data of the selected color component is obtained by means of φ: In the R component, the G component, and the beta component, the color component selected as the image material selected from the latter is removed, and the image data corresponding to the stitch region is obtained from the image data. We cut out the image data that was cut out based on this and proceeded with the subsequent processing. 1 〇 · The stitch inspection device as described in claim 9 of the patent application, wherein the material of the electrode pad is aluminum, and the material of the base layer is copper, which is selected for cutting out the image data for the stitch area The color component • is the G component. 11. A probe device for placing a substrate on a probe card and a mounting table, and contacting the probe of the probe card with an electrode pad of the wafer on the substrate to perform electrical measurement of the wafer. The probe device is characterized in that the stitch inspection device according to any one of claims 1 to 10 is provided. 12. A stitch inspection method for photographing a stitch formed on the electrode pad after contacting the probe with an electrode pad on the substrate to be inspected, and for the electrode pad Exposure of the base layer of the sheet -45-201009973 There is a stitch inspection method for inspection, which is characterized in that it is obtained from the R component, the G component, and the B component which are color components, and is adapted to the electrode spacer. The difference between the reflectance between the material and the material of the base layer is the engineering of the image data of the color component selected; and the image data obtained by the engineering is taken out: in order to obtain the substrate differently from the electrode pad The gray scale level set by the portrait of the layer, and the number of pixels having the gray scale level, the relationship between the two data @工程; and according to the relationship data obtained by the project, The presence or absence of the exposure of the base layer at the stitching is determined. 13. The stitch inspection method according to claim 12, further comprising: setting the gray scale level based on the image data of the selected color component, and simultaneously performing the image The data is subjected to two-dimension processing, and the @projecting image data for the detection of the exposed area of the basement film is obtained, and the above-mentioned relationship data is the two-dimensional image data. 14. The stitch inspection method according to Item 12 or Item 13, wherein the gray scale level is set according to the image data of the selected color component, and is set in advance. The histogram of the relationship between the gray scale level and the number of pixels in the range is set according to the histogram. 15. The method of stitch inspection as described in any one of the items of the present invention, which is described in any one of the above-mentioned claims, wherein the electrode pad is made of aluminum and the base layer is made of copper. The selected color component is the B component. 16. The stitch inspection method according to Item 12 or Item 13 of the patent application, wherein the color component selected from the R component, the G component, and the B component is removed In the latter, image data of the color component selected in response to the difference in reflectance between the shavings of the electrode shim and the material of the underlying layer is obtained, and the image data of φ is deconstructed. The diffracted image data is used as a mask material to perform masking for removing pixels corresponding to the shading of the electrode shim of the electrode pad for the binarized image data for detecting the exposed area of the base film. Processing project. 17. The stitch inspection method according to claim 16, wherein the material of the electrode pad is aluminum, the material of the base layer is copper, and the color component selected for masking data is R. ingredient. 18. The stitching inspection method according to Item 16 or Item 17 of the patent application, wherein the material of the base layer is copper, and the above-mentioned two-dimensional image data for detecting the exposed area of the base layer is used. The color component selected is the B component. 19. The stitch inspection method according to any one of claims 12 to 18, wherein the difference between the reflectance of the material of the electrode pad and the material of the base layer is The image data of the selected color component is obtained by: obtaining the color component selected from the latter by the color component selected from the R component, the G component, and the B component. -47- 201009973 Image data, and the project corresponding to the image data of the stitching area is cut out from this image data, and the subsequent image processing is performed based on the image data cut out. 2〇_If the stitch inspection method described in item 19 of the patent application scope is 'the material of the electrode pad is aluminum, the material of the base layer is copper, in order to cut out the image data corresponding to the stitch area. The color component selected is the G component. 21. A memory medium is a memory medium storing a computer program used in a stitch inspection device, and the stitch inspection device is placed on an electrode pad that contacts a probe on a substrate to be inspected. After the electrical measurement, the stitch formed on the electrode pad is imaged, and the presence or absence of the exposure of the base layer of the electrode pad is examined. The memory medium is characterized in that: the computer program is implemented. A method of forming a stitch inspection method according to any one of claims 12 to 20 is constituted as a step group. -48-
TW098117478A 2008-05-27 2009-05-26 A stitch check device, a probe device and a stitch check method, and a memory medium TWI505384B (en)

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