KR101047795B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR101047795B1
KR101047795B1 KR1020050000697A KR20050000697A KR101047795B1 KR 101047795 B1 KR101047795 B1 KR 101047795B1 KR 1020050000697 A KR1020050000697 A KR 1020050000697A KR 20050000697 A KR20050000697 A KR 20050000697A KR 101047795 B1 KR101047795 B1 KR 101047795B1
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KR
South Korea
Prior art keywords
hole cup
phosphor
led
light emitting
emitting device
Prior art date
Application number
KR1020050000697A
Other languages
Korean (ko)
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KR20060080339A (en
Inventor
박준석
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020050000697A priority Critical patent/KR101047795B1/en
Publication of KR20060080339A publication Critical patent/KR20060080339A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)

Abstract

The present invention relates to a semiconductor light emitting device that maximizes luminous efficiency by separating a package and a silicon optical bench chip and injecting a small amount of phosphor into a SiOB chip. A silicon-based substrate having a hole cup, an LED mounted on a bottom surface of the first hole cup, a first anode and a first cathode electrically connected to the LED, a reflector provided on an inner surface of the first hole cup, and a coating on the inside of the first hole cup. SiOB chip having a phosphor to be; And a second hole cup to which the SiOB chip is attached to a bottom surface, a second anode and a second cathode electrically connected to the SiOB chip, a reflective cup provided on an inner surface of the second hole cup, and a transparent coating applied to the inside of the second hole cup. It characterized in that it comprises an LED package having a molding member.

According to the present invention, the phosphor and transparent filler layers are separated to minimize the transmissive layer of each layer, thereby preventing the light output from being lowered due to the difference in the path of light. The light distribution is differentiated into white, blue and yellow. The problem formed can be solved. In addition, according to the present invention, since the amount of the phosphor can be minimized and uniformly applied, there is an effect of improving the uniformity of the light emitted.

Description

Semiconductor light emitting device

1 is an enlarged side sectional view showing a structure of a semiconductor light emitting device of a conventional package mounting type and part thereof.

2 is an enlarged side sectional view showing a structure of a conventional surface mount type semiconductor light emitting device and a part thereof;

Figure 3 is a side cross-sectional view showing the internal structure of the SiOB chip provided in the semiconductor light emitting device according to the embodiment of the present invention.

Figure 4 is a side cross-sectional view showing the internal structure of a semiconductor light emitting device according to an embodiment of the present invention.

Description of the Related Art

100: SiOB chip 110: SiOB

112: first hole cup 114: solder member

120: reflector 130: LED

140: first anode 150: first cathode

160: phosphor 200: LED package

210: package body 212: second hole cup

220: second anode 230: second cathode                 

240: reflective cup 250: transparent filler

The present invention relates to a structure of a semiconductor light emitting device.

A semiconductor light emitting device is a device used to send and receive a signal by converting an electrical signal into a form of infrared, visible or ultraviolet light using the characteristics of the compound semiconductor.

In general, the semiconductor light emitting device is used in mobile communication terminals, home appliances, remote controllers, electronic displays, indicators, and various automation devices, and is divided into IRED (Infrared Emitting Diode) type and VLED (Visible Light Emitting Diode) type. .

As the use area of the semiconductor light emitting device becomes wider as described above, the required luminance, such as a lamp used for living, a lamp for a structural signal, also increases, and a high output semiconductor light emitting device is widely used in recent years.

That is, the semiconductor light emitting device needs a low driving voltage to be mainly used as a backlight in the industrial field of mobile communication terminals such as smart phones, mobile phones, PDA (Personal Digital Assistant), and high brightness to be used in outdoor systems Must have the characteristics of

For this reason, the development of white semiconductor light emitting devices has been more actively conducted. The advantages include low power consumption, compatibility with existing LCD products, and low heat generation. It is a light source that can prevent the vision, the vision can respond well in various environments, it is inexpensive and has a long life.

Such a conventional method of manufacturing a white semiconductor light emitting device includes a method of manufacturing a package by filling a phosphor pigment in a container in which a cup-shaped reflector is implemented, and a method of manufacturing the package using a transfer mold method, which is a semiconductor package mold method. The structure of the white semiconductor light emitting device is as follows.

1 is an enlarged side sectional view showing a structure of a white semiconductor light emitting device having a conventional package mounting type and a part thereof.

According to FIG. 1, a Hall Cup 8 is provided at the tip of a lead frame in which a cathode 3 is formed, and the LED chip 1 is housed and bonded to the Hole Cup 8. . The hole cup 8 serves to reflect light emitted from the side of the LED chip 1 upwards.

The LED chip 1 is connected to an anode 2 and a cathode 3, and an epoxy mold layer 4 in which phosphor (yellow) is mixed with an epoxy (yellow) is formed above the LED chip 1. .

The upper ends of the LED chip 1, the anode 2 and the cathode 3 are inserted into and fixed inside the package 5, including the epoxy mold layer 4, and having a colorless or colored translucent resin therein. Molded and encapsulated into

At this time, the p-type electrode and the n-type electrode of the LED chip 1 is electrically connected to the anode 2 and the cathode 3 by the tax wire 6 and the metal post (cathode lead) 7, respectively.                         

2 is an enlarged side sectional view showing a structure of a conventional surface mount type white semiconductor light emitting device and a part thereof.

According to FIG. 2, the conventional surface mount type white semiconductor light emitting device includes an LED chip 10, a plastic injection structure 11, a metal post (anode lead) 12, a metal post (cathode lead) 13, and a resin mold. It consists of 14.

The LED chip 10 is a material formed of an InGaN (Indium Gallium Nitride) semiconductor layer structure, which is a light emitting layer on an Al2O3 substrate or a SiC substrate, cut into a thickness of about 0.1 mm, and then the metal post (cathode) by Ag (silver) paste or the like. And anodes 12 and 13, and a yellow phosphor is injected into the resin mold 14.

Looking at the structure of the conventional white semiconductor light-emitting device macroscopically, the reference light generated from the blue LED chip (1, 10) not only proceeds to the upper surface of the chip, but also the reference light is a phosphor in a portion close to the surface of the LED chip (1, 10). The second excitation light (excited secondary light) absorbed by and re-emitted is temporarily mixed and displayed in white.

However, when observed microscopically, the light path passing through the phosphor is shortened to the upper surface side of the chip, and the white light with strong blue color enters, and the wider the angle, the light path is differentiated and the white light becomes gradually weakened. do. That is, when viewed from the upper surface side, the central portion of the divergent light is blue, and toward the outside it forms a luminance distribution in which white light with strong yellow color is emitted.

In addition to the above-mentioned structural problems, the amount of the phosphor is excessively injected or the thickness and density of the amount injected are often unevenly injected, and in this case, the difference in color variation and uniformity as described above is more severe. There is a problem.

Therefore, the present invention forms a separate layer on the silicon optical bench (SiOB) chip and the LED package in which the phosphor and the molding member are respectively mounted, so that the white light has the same progress path, and the phosphor is injected in a minimum amount. It is an object of the present invention to provide a semiconductor light emitting device having a structure in which the distribution of? Is uniform.

In addition, the present invention is a fluorescent material is applied onto the LED mounted on a silicon optical bench (SiOB) chip and a molding member is injected onto the phosphor to form a laminated structure to damage the LED due to the heat until the molding member is solidified Another object is to provide a semiconductor light emitting device which is prevented from being prevented.

In order to achieve the above object, the semiconductor light emitting device according to the present invention is a silicon-based substrate having a first hole cup, an LED mounted on the bottom surface of the first hole cup, the first anode and the first cathode is electrically connected to the LED, the An SiOB chip having a reflector provided on an inner surface of a first hole cup and a phosphor coated on the inside of the first hole cup; And a second hole cup to which the SiOB chip is attached to a bottom surface, a second anode and a second cathode electrically connected to the SiOB chip, a reflective cup provided on an inner surface of the second hole cup, and a transparent coating applied to the inside of the second hole cup. It characterized in that it comprises an LED package having a molding member.

Hereinafter, a semiconductor light emitting device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

The semiconductor light emitting device according to the embodiment of the present invention is a white semiconductor light emitting device, and the white semiconductor light emitting device includes a SiOB chip and an LED package, and the SiOB chip will be described with reference to the accompanying drawings. Shall be.

3 is a side cross-sectional view showing the internal structure of the SiOB chip 100 provided in the white semiconductor light emitting device according to the embodiment of the present invention.

Referring to FIG. 3, the SiOB chip 100 includes a SiOB (silicon optical bench) 110, a blue light emitting diode (LED) 130, a reflector 120, a first anode 140, and a first cathode 150. And the phosphor 160. The SiOB chip 100 forms bumps on a chip and flips them after forming the bumps, unlike the conventional assembly method of molding after die bonding and wire bonding. The chip is in the form of a wireless package that is electrically connected.

This is a package mounting method that meets the trend of chip miniaturization and integration, as well as light and short package technology, and has an advantage of shortening the connection distance between the chip and the package.

First, the SiOB 110 is formed with a first hole cup 112 through an etching process such as, for example, wet etching, and the metal reflector 120 is fixed to an inner surface of the first hole cup 112.

The first hole cup 112 has a truncated conical shape, and the reflector 120 is positioned on an oblique side surface and a flat bottom surface, so that the light emitted from the blue LED 130 can be reflected from both side surfaces and the bottom surface side.

At this time, the side of the first hole cup 112 induces the reflected light so that the crystal angle is adjusted so that the light emitted from the blue LED 130 can be reflected at the optimum angle, The side may have a curved shape.

The blue LED 130 is flip-chip bonded to a portion of the reflector 120 positioned on the bottom surface of the SiOB 110. The electrode of the blue LED 130 is connected to the reflector through a solder member 114. 120) is energized.

The first anode 140 and the first cathode 150 are fixed to a portion of the upper outer surface of the SiOB 110 where the first hole cup 112 is not formed, and the reflector 120 is the first anode. The p-side electrode of the blue LED 130 is energized with the first anode 140 by being electrically connected to the 140 and the first cathode 150, and the n-side electrode of the blue LED 130 is the first electrode. It is connected to the cathode 150.

Accordingly, the reflector 120 is electrically insulated from the first anode 140 and the first cathode 150, and each part of the reflector 120 is insulated from each other.

The first anode 140 and the first cathode 150 are each connected to the LED package by forming a wire bonding pad.

As shown in FIG. 3, the phosphor 160 is coated inside the first hole cup 112, and the phosphor 160 is flatly coated on the upper opening surface of the hole cup 112. desirable.

In addition, the blue LED 130 is in the form of a hexahedron, and the phosphor 160 is coated to surround the blue LED 130 (including the bottom surface).

In contrast to a thick molding layer in which the phosphor 160 is irregularly injected in a state where a conventional white semiconductor light emitting device is mounted on a package, the SiOB chip 100 according to the present invention has a structure that emits white light by itself. As a result, the reflection efficiency of the photon itself is increased, and a distribution area through the phosphor 160 and filtered by white light may be formed evenly.

That is, in the SiOB chip 100 on the white semiconductor light emitting device according to the present invention, the crystal angle of the SiOB 110 is adjusted, the reflector 120 functions at a slope, and the pure phosphor 160 which is not mixed with the molding member is formed. The thin coating on the first hole cup 112 makes the path through which the emitted light and the reflected light of the blue LED 130 pass through the phosphor 160 become substantially constant.

4 is a side cross-sectional view showing the internal structure of a white semiconductor light emitting device according to an embodiment of the present invention.

Referring to FIG. 4, the white semiconductor light emitting device according to the embodiment of the present invention includes an LED package 200 and the SiOB chip 100 described with reference to FIG. 3, and the LED package 200 includes: The package body 210, the second anode 220, the second cathode 230, the bonding wire 260, the reflective cup 240 and the transparent molding member 250 are composed of.

For the first time, the package body 210 is made of an insulating material, and has a second hole cup 212 having an open upper surface.

The SiOB chip 100 is attached to a bottom surface of the second hole cup 212, and the first anode 140 and the second cathode 230 of the SiOB chip 100 are respectively bonded through the bonding wires 260. The second anode 220 and the second cathode 230 is electrically connected.

Here, the SiOB chip 100 is maximized luminous efficiency individually as described above, even if a plurality of adjacent to each other does not affect each luminous efficiency, and thus a plurality of inside the package body 210 Can be provided with a dog.

When the plurality of SiOB chips 100 are integrated into the LED package 200, the plurality of SiOB chips 100 may have a high output light emitting effect.

The reflection cup 240 is provided on an inner surface of the second hole cup 212, and a transparent molding member 250 is applied to the inside of the package hole cup 212.

The transparent molding member 250 also encloses one or more of the SiOB chip 100, and the refractive efficiency of each of the layers is separated from the phosphor 160.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications other than those described above are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

As described above, according to the white semiconductor light emitting device according to the present invention, since the transmissive layer of each layer is minimized by separating the phosphor and the transparent filler layer, it is possible to prevent a decrease in the light output due to the difference in the path of light. White, blue and yellow to solve the problem that the light distribution is formed differentially.

In addition, according to the present invention, since the amount of phosphor can be minimized and uniformly applied, the uniformity of emitted light can be improved, and since the mold layer is not directly contacted with the blue LED, the blue LED is exposed to stress due to heat. There is an effect that can be prevented.

Claims (10)

A silicon substrate having a first hole cup formed thereon, an LED mounted on a bottom surface of the first hole cup, a first anode and a first cathode electrically connected to the LED, a reflector provided on an inner surface of the first hole cup, and an inside of the first hole cup. An SiOB chip having a phosphor coated on it; And A second hole cup to which the SiOB chip is attached to a bottom surface, a second anode and a second cathode electrically connected to the SiOB chip, a reflective cup provided on an inner surface of the second hole cup, and a transparent molding applied to the inside of the second hole cup A semiconductor light emitting device comprising an LED package having a member. The method of claim 1, wherein the SiOB chip And at least one LED in the first hole cup. The method of claim 1, wherein the LED A semiconductor light emitting device comprising a blue LED or a UV LED. The method of claim 1, wherein the SiOB chip In the first hole cup is formed, the crystal angle of the side surface is adjusted so that the light emitted from the LED is guided to the reflected light. The method of claim 1, wherein the reflector And electrically connecting and connecting the electrode of the LED to the first anode and the first cathode. The method of claim 1, wherein the SiOB chip A semiconductor light emitting device, characterized in that bonded to the second anode and the second cathode and the wire. The method of claim 1, wherein the phosphor The semiconductor light emitting device of claim 1, wherein the semiconductor light emitting device is coated below the upper opening surface of the first hole cup. The method of claim 1, wherein the phosphor A semiconductor light emitting device, characterized in that injected to surround the LED. The method of claim 1, wherein the phosphor A semiconductor light emitting device, characterized in that the yellow phosphor. The method of claim 1, wherein the phosphor A semiconductor light emitting device, characterized in that the phosphor of any one of red phosphor, green phosphor or blue phosphor.
KR1020050000697A 2005-01-05 2005-01-05 Semiconductor light emitting device KR101047795B1 (en)

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Application Number Priority Date Filing Date Title
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KR101047795B1 true KR101047795B1 (en) 2011-07-07

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100901618B1 (en) 2007-04-19 2009-06-08 엘지이노텍 주식회사 Light emitting diode package and manufacturing method thereof
JP5286938B2 (en) * 2008-05-27 2013-09-11 東京エレクトロン株式会社 Needle mark inspection device, probe device, needle mark inspection method, and storage medium
KR20120067153A (en) 2010-12-15 2012-06-25 삼성엘이디 주식회사 Light emitting device, light emitting device package, manufacturing method of light emitting device, and packaging method of light emitting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10228249A (en) 1996-12-12 1998-08-25 Nichia Chem Ind Ltd Light emitting diode (led) and led display device using the diode
JPH118415A (en) 1997-06-13 1999-01-12 Citizen Electron Co Ltd Infrared data communication module
JP2003532299A (en) * 2000-04-26 2003-10-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Light emitting semiconductor device with luminescence conversion element
KR20040089979A (en) * 2003-04-15 2004-10-22 서울반도체 주식회사 fabrication of white Light Emitting Diodes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10228249A (en) 1996-12-12 1998-08-25 Nichia Chem Ind Ltd Light emitting diode (led) and led display device using the diode
JPH118415A (en) 1997-06-13 1999-01-12 Citizen Electron Co Ltd Infrared data communication module
JP2003532299A (en) * 2000-04-26 2003-10-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Light emitting semiconductor device with luminescence conversion element
KR20040089979A (en) * 2003-04-15 2004-10-22 서울반도체 주식회사 fabrication of white Light Emitting Diodes

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