TW201007730A - Two mask MTJ integration for STT MRAM - Google Patents
Two mask MTJ integration for STT MRAM Download PDFInfo
- Publication number
- TW201007730A TW201007730A TW098112861A TW98112861A TW201007730A TW 201007730 A TW201007730 A TW 201007730A TW 098112861 A TW098112861 A TW 098112861A TW 98112861 A TW98112861 A TW 98112861A TW 201007730 A TW201007730 A TW 201007730A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- mtj
- layer
- mask
- mram
- Prior art date
Links
- 230000010354 integration Effects 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 53
- 230000005291 magnetic effect Effects 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 238000001465 metallisation Methods 0.000 claims abstract description 35
- 238000002161 passivation Methods 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 230000005415 magnetization Effects 0.000 claims abstract description 7
- 238000004891 communication Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- 238000000746 purification Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 3
- 229920001690 polydopamine Polymers 0.000 claims 1
- 230000005641 tunneling Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 56
- 230000008569 process Effects 0.000 description 34
- 238000013461 design Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000008901 benefit Effects 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4616708P | 2008-04-18 | 2008-04-18 | |
| US12/405,461 US8125040B2 (en) | 2008-04-18 | 2009-03-17 | Two mask MTJ integration for STT MRAM |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201007730A true TW201007730A (en) | 2010-02-16 |
Family
ID=40791514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098112861A TW201007730A (en) | 2008-04-18 | 2009-04-17 | Two mask MTJ integration for STT MRAM |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8125040B2 (OSRAM) |
| EP (2) | EP2277211B1 (OSRAM) |
| JP (3) | JP2011518440A (OSRAM) |
| KR (1) | KR101200008B1 (OSRAM) |
| CN (1) | CN102007614B (OSRAM) |
| TW (1) | TW201007730A (OSRAM) |
| WO (1) | WO2009129283A1 (OSRAM) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100157644A1 (en) * | 2008-12-19 | 2010-06-24 | Unity Semiconductor Corporation | Configurable memory interface to provide serial and parallel access to memories |
| WO2010151855A2 (en) * | 2009-06-26 | 2010-12-29 | Cornell University | Iii-v semiconductor structures including aluminum-silicon nitride passivation |
| US8558331B2 (en) * | 2009-12-08 | 2013-10-15 | Qualcomm Incorporated | Magnetic tunnel junction device |
| US8681536B2 (en) * | 2010-01-15 | 2014-03-25 | Qualcomm Incorporated | Magnetic tunnel junction (MTJ) on planarized electrode |
| JP2011238679A (ja) * | 2010-05-07 | 2011-11-24 | Fujitsu Semiconductor Ltd | 磁気記憶装置の製造方法及び磁気記憶装置 |
| US8722543B2 (en) | 2010-07-30 | 2014-05-13 | Headway Technologies, Inc. | Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices |
| US8547736B2 (en) * | 2010-08-03 | 2013-10-01 | Qualcomm Incorporated | Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction |
| US8928100B2 (en) * | 2011-06-24 | 2015-01-06 | International Business Machines Corporation | Spin transfer torque cell for magnetic random access memory |
| US8921959B2 (en) * | 2011-07-26 | 2014-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device and fabrication method thereof |
| US9202562B2 (en) | 2012-04-18 | 2015-12-01 | Advanced Integrated Memory Inc. | Method to reduce read error rate for semiconductor resistive memory |
| US9047964B2 (en) | 2012-08-20 | 2015-06-02 | Qualcomm Incorporated | Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness |
| US8901687B2 (en) | 2012-11-27 | 2014-12-02 | Industrial Technology Research Institute | Magnetic device with a substrate, a sensing block and a repair layer |
| KR20210063472A (ko) | 2013-03-15 | 2021-06-01 | 인텔 코포레이션 | 내장된 자기 터널 접합을 포함하는 로직 칩 |
| US9172033B2 (en) | 2013-07-03 | 2015-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device and fabrication method thereof |
| US8988835B1 (en) | 2013-10-14 | 2015-03-24 | International Business Machines Corporation | Contact recording tunnel magnetoresistive sensor with layer of refractory metal |
| CN104882538B (zh) * | 2014-02-28 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | 环型磁性随机存取存储器单元结构的制造方法 |
| KR102149195B1 (ko) | 2014-03-04 | 2020-08-28 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
| US9269893B2 (en) * | 2014-04-02 | 2016-02-23 | Qualcomm Incorporated | Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch |
| CN105206741B (zh) * | 2014-06-23 | 2019-02-12 | 中芯国际集成电路制造(上海)有限公司 | 磁性隧道结单元和制备磁性隧道结单元的方法 |
| US10043967B2 (en) * | 2014-08-07 | 2018-08-07 | Qualcomm Incorporated | Self-compensation of stray field of perpendicular magnetic elements |
| US10256395B2 (en) | 2015-06-19 | 2019-04-09 | Intel Corporation | Capped magnetic memory |
| US9905751B2 (en) | 2015-10-20 | 2018-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic tunnel junction with reduced damage |
| CN106676532B (zh) * | 2015-11-10 | 2019-04-05 | 江苏鲁汶仪器有限公司 | 金属刻蚀装置及方法 |
| US9853210B2 (en) * | 2015-11-17 | 2017-12-26 | International Business Machines Corporation | Reduced process degradation of spin torque magnetoresistive random access memory |
| US9515252B1 (en) * | 2015-12-29 | 2016-12-06 | International Business Machines Corporation | Low degradation MRAM encapsulation process using silicon-rich silicon nitride film |
| US9805795B2 (en) | 2016-01-08 | 2017-10-31 | Samsung Electronics Co., Ltd. | Zero leakage, high noise margin coupled giant spin hall based retention latch |
| US9711713B1 (en) * | 2016-01-15 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure, electrode structure and method of forming the same |
| US10522749B2 (en) | 2017-05-15 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage |
| US10043851B1 (en) | 2017-08-03 | 2018-08-07 | Headway Technologies, Inc. | Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching |
| US10359699B2 (en) | 2017-08-24 | 2019-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity |
| US10585630B2 (en) | 2017-09-11 | 2020-03-10 | Samsung Electronics Co., Ltd. | Selectorless 3D stackable memory |
| US10038138B1 (en) | 2017-10-10 | 2018-07-31 | Headway Technologies, Inc. | High temperature volatilization of sidewall materials from patterned magnetic tunnel junctions |
| US10134981B1 (en) | 2017-10-20 | 2018-11-20 | Headway Technologies, Inc. | Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devices |
| US10879077B2 (en) | 2017-10-30 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Planarization apparatus and planarization method thereof |
| US10325639B2 (en) | 2017-11-20 | 2019-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Initialization process for magnetic random access memory (MRAM) production |
| US10153427B1 (en) | 2017-12-28 | 2018-12-11 | Headway Technologies, Inc. | Magnetic tunnel junction (MTJ) performance by introducing oxidants to methanol with or without noble gas during MTJ etch |
| CN109994476B (zh) * | 2017-12-29 | 2021-03-16 | 上海磁宇信息科技有限公司 | 一种制备磁性随机存储器阵列单元的方法 |
| US10475991B2 (en) | 2018-02-22 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices |
| US10790002B2 (en) | 2018-06-21 | 2020-09-29 | Samsung Electronics Co., Ltd. | Giant spin hall-based compact neuromorphic cell optimized for differential read inference |
| US11296277B2 (en) | 2018-10-16 | 2022-04-05 | Samsung Electronics Co., Ltd. | Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same |
| US10971176B2 (en) | 2019-02-21 | 2021-04-06 | International Business Machines Corporation | Tunnel magnetoresistive sensor with adjacent gap having chromium alloy seed layer and refractory material layer |
| US11805704B2 (en) * | 2020-05-08 | 2023-10-31 | International Business Machines Corporation | Via interconnects for a magnetoresistive random-access memory device |
| US11569442B2 (en) | 2020-06-17 | 2023-01-31 | International Business Machines Corporation | Dielectric retention and method of forming memory pillar |
| US12464955B2 (en) * | 2021-12-09 | 2025-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic tunnel junction device and method of forming the same |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5013494B2 (ja) * | 2001-04-06 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 磁性メモリの製造方法 |
| US6631055B2 (en) * | 2001-06-08 | 2003-10-07 | International Business Machines Corporation | Tunnel valve flux guide structure formed by oxidation of pinned layer |
| US6759263B2 (en) | 2002-08-29 | 2004-07-06 | Chentsau Ying | Method of patterning a layer of magnetic material |
| JP2004128229A (ja) * | 2002-10-02 | 2004-04-22 | Nec Corp | 磁性メモリ及びその製造方法 |
| US7394626B2 (en) * | 2002-11-01 | 2008-07-01 | Nec Corporation | Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same |
| KR100615600B1 (ko) * | 2004-08-09 | 2006-08-25 | 삼성전자주식회사 | 고집적 자기램 소자 및 그 제조방법 |
| US6911156B2 (en) | 2003-04-16 | 2005-06-28 | Freescale Semiconductor, Inc. | Methods for fabricating MRAM device structures |
| US20060138576A1 (en) * | 2003-06-24 | 2006-06-29 | Galdis Michael C | Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same |
| KR100568512B1 (ko) * | 2003-09-29 | 2006-04-07 | 삼성전자주식회사 | 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들 |
| US20050090111A1 (en) * | 2003-10-24 | 2005-04-28 | Heon Lee | Magnetic tunnel junction device with etch stop layer and dielectric spacer |
| US7259062B2 (en) | 2003-10-24 | 2007-08-21 | Hewlett-Packard Development Company, Lp. | Method of making a magnetic tunnel junction device |
| US20050205952A1 (en) * | 2004-03-19 | 2005-09-22 | Jae-Hyun Park | Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same |
| US7105903B2 (en) * | 2004-11-18 | 2006-09-12 | Freescale Semiconductor, Inc. | Methods and structures for electrical communication with an overlying electrode for a semiconductor element |
| KR100647319B1 (ko) * | 2005-02-05 | 2006-11-23 | 삼성전자주식회사 | 스핀 분극 전류를 이용한 멀티 비트 자기 메모리 소자와그 제조 및 구동 방법 |
| US7285836B2 (en) * | 2005-03-09 | 2007-10-23 | Maglabs, Inc. | Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing |
| JP4677589B2 (ja) | 2005-03-18 | 2011-04-27 | 独立行政法人科学技術振興機構 | 伝送回路一体型マイクロ波発生素子並びにマイクロ波検出方法、マイクロ波検出回路、マイクロ波検出素子及び伝送回路一体型マイクロ波検出素子 |
| JP4659518B2 (ja) * | 2005-05-24 | 2011-03-30 | シャープ株式会社 | 磁気抵抗効果素子及びその製造方法 |
| KR100655438B1 (ko) * | 2005-08-25 | 2006-12-08 | 삼성전자주식회사 | 자기 기억 소자 및 그 형성 방법 |
| US7511990B2 (en) * | 2005-09-30 | 2009-03-31 | Everspin Technologies, Inc. | Magnetic tunnel junction temperature sensors |
| JP4991155B2 (ja) * | 2006-01-19 | 2012-08-01 | 株式会社東芝 | 半導体記憶装置 |
| US7732881B2 (en) * | 2006-11-01 | 2010-06-08 | Avalanche Technology, Inc. | Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM) |
| JP4560025B2 (ja) * | 2006-09-29 | 2010-10-13 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその製造方法 |
| US7852662B2 (en) * | 2007-04-24 | 2010-12-14 | Magic Technologies, Inc. | Spin-torque MRAM: spin-RAM, array |
| US7723128B2 (en) * | 2008-02-18 | 2010-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ formed capping layer in MTJ devices |
| US8057925B2 (en) * | 2008-03-27 | 2011-11-15 | Magic Technologies, Inc. | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same |
| US20090251950A1 (en) * | 2008-04-08 | 2009-10-08 | Ulrich Klostermann | Integrated Circuit, Memory Cell Arrangement, Thermal Select Magneto-Resistive Memory Cell, Method of Operating a Thermal Select Magneto-Resistive Memory Cell, and Method of Manufacturing a Thermal Select Magneto-Resistive Memory Cell |
-
2009
- 2009-03-17 US US12/405,461 patent/US8125040B2/en active Active
- 2009-04-15 JP JP2011505157A patent/JP2011518440A/ja not_active Withdrawn
- 2009-04-15 WO PCT/US2009/040612 patent/WO2009129283A1/en not_active Ceased
- 2009-04-15 KR KR1020107025861A patent/KR101200008B1/ko not_active Expired - Fee Related
- 2009-04-15 EP EP09732874.4A patent/EP2277211B1/en not_active Not-in-force
- 2009-04-15 CN CN200980112999.6A patent/CN102007614B/zh not_active Expired - Fee Related
- 2009-04-15 EP EP20140172609 patent/EP2800159A1/en not_active Withdrawn
- 2009-04-17 TW TW098112861A patent/TW201007730A/zh unknown
-
2014
- 2014-04-03 JP JP2014077077A patent/JP2014160839A/ja not_active Withdrawn
-
2015
- 2015-02-18 JP JP2015029705A patent/JP2015144287A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2277211A1 (en) | 2011-01-26 |
| EP2277211B1 (en) | 2014-10-08 |
| WO2009129283A1 (en) | 2009-10-22 |
| EP2800159A1 (en) | 2014-11-05 |
| JP2014160839A (ja) | 2014-09-04 |
| KR101200008B1 (ko) | 2012-11-12 |
| JP2015144287A (ja) | 2015-08-06 |
| JP2011518440A (ja) | 2011-06-23 |
| US20090261437A1 (en) | 2009-10-22 |
| CN102007614B (zh) | 2014-07-16 |
| CN102007614A (zh) | 2011-04-06 |
| KR20110002864A (ko) | 2011-01-10 |
| US8125040B2 (en) | 2012-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201007730A (en) | Two mask MTJ integration for STT MRAM | |
| KR101153499B1 (ko) | Ｓｔｔ ｍｒａｍ 자기 터널 접합부 아키텍쳐 및 통합 | |
| CN102017157B (zh) | 使用单个掩模形成磁性隧道结的方法 | |
| US9373782B2 (en) | MTJ structure and integration scheme | |
| CA2711305C (en) | Memory cell and method of forming a magnetic tunnel junction (mtj) of a memory cell | |
| TW201131847A (en) | Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions | |
| CN106058042A (zh) | 在平坦化电极上的磁性隧道结 | |
| US12324358B2 (en) | Tall bottom electrode structure in embedded magnetoresistive random-access memory |