TW200949860A - Cu-ni-si alloy for electronic materials - Google Patents

Cu-ni-si alloy for electronic materials Download PDF

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TW200949860A
TW200949860A TW98110622A TW98110622A TW200949860A TW 200949860 A TW200949860 A TW 200949860A TW 98110622 A TW98110622 A TW 98110622A TW 98110622 A TW98110622 A TW 98110622A TW 200949860 A TW200949860 A TW 200949860A
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particles
copper alloy
small particles
mass
strength
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TW98110622A
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TWI381398B (en
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Mitsuhiro Ookubo
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Nippon Mining Co
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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Abstract

Corson alloy characteristics are improved by controlling the distribution profile of Ni-Si compound particles. Disclosed is a copper alloy for electronic materials comprising Ni: 0.4 to 6.0 mass% and Si: 0.1 to 2.0 mass%, and the remainder of which is composed of Cu and inevitable impurities, in which alloy for electronic materials, small Ni-Si compound particles with a particle size of 0.01 [mu]m or greater and less than 0.05 [mu]m, and large Ni-Si compound particles with a particle size of 0.05 [mu]m or greater and less than 5.0 [mu]m are present. The quantitative density of the small particles is 106 to 1010 particles per 1 mm2, and the quantitative density of the large particles is 1/10,000 to 1/10 the aforementioned quantitative density of the small particles.

Description

200949860 六、發明說明: L發明所屬之技術領域】 本發明係關於_種析出硬化型銅合金’尤其係關於 種適用於各種電子機器零件之Cu_Ni Si系合金。 【先前技術】 σ 對於導線架、連接器、接腳、端子、繼電器、開關等 之各種電子設備零件中所㈣之電子材料_合金而言, 要求兼具有高強度及高導電性(或者導熱性)料基本特 性。近年來,電子零件之高積體化及小⑽、薄型化急速 地發展’與此相對應地’對於電子設備零件中所使用之銅 合金之要求水準正逐步提高。 根據高強度及高導電性之觀點,近年來代替作為電 子材料用銅合金之先前之以料銅、黃鋼等為代表之固溶 強化型銅合金,析出硬化型銅合金之使用量正在增加。對 於析出硬化型銅合金而言,#由對經固溶化處理之過飽和 固溶體進行時效處理,而使微細之析出物均句地分散,於 =金之強度變高之同時,銅中之固溶元素量減少導電性 提高。因此,可獲得強度、彈性等之機械性質優異且導電 性、導熱性良好之材料》200949860 VI. Description of the Invention: Field of the Invention The present invention relates to a Cu-Ni Si-based alloy which is suitable for use in various electronic machine parts. [Prior Art] σ For the electronic materials _ alloys of (4) in various electronic equipment parts such as lead frames, connectors, pins, terminals, relays, switches, etc., it is required to have both high strength and high electrical conductivity (or thermal conductivity). Basic properties. In recent years, the high integration and small (10) and thinning of electronic components have been rapidly developed. The corresponding requirements for copper alloys used in electronic equipment parts are gradually increasing. In recent years, in recent years, in place of a solid solution-strengthened copper alloy represented by copper, yellow steel or the like which is a copper alloy for an electronic material, the use amount of the precipitation hardening type copper alloy is increasing in view of high strength and high electrical conductivity. For the precipitation hardening type copper alloy, # is subjected to aging treatment of the solution-treated supersaturated solid solution, so that the fine precipitates are uniformly dispersed, and the strength of the gold becomes high while the solid in the copper is solid. The amount of dissolved elements reduces the conductivity. Therefore, a material excellent in mechanical properties such as strength and elasticity and excellent in electrical conductivity and thermal conductivity can be obtained.

析出硬化型銅合金中’一般被稱為卡遜系合金之 Cu-Ni-Si纟銅合金係兼具比較高之導電性、強度、應力緩 和特性及彎曲加工性之代表性之銅合金,且係業界目前正 被廣為開發之合金之一。該銅合金係藉由使微細之&系 金屬間化合物粒子析出至銅基質中來提高強度及導電率。 3 200949860 影響。Ni-Si化合物粒子之析出狀態會對合金特性造成 曰本專利3797736號公報(專利文獻u 在職化合物粒子之粒捏為。侧„上且二存3 "m者(小粒子)以及Ni_Si化合物粒子之粒徑為〇〇3以 m〜_ 者(大粒子)’且將小粒子/A粒子之數量之 比率設為1.5以上《•其中亦揭示:粒徑未達G G3 # m之小 粒子係主要使合金之強度及耐熱性提高,但對於剪切加工 性之助益不大。另一方面,其中亦揭示:粒徑為 以上之大粒子對於提高合金之強度及耐熱性之助益不大, 但於進行剪切加工時會集中承受應力,成為產生微裂縫之 根源,從而顯著地提高剪切加工性。而且,其中記述:專 利文獻1中揭示之銅合金係具有作為電氣電子零件用銅合 金所要求之強度或耐熱性等之特性,並且剪切加工性優異 之銅合金。 作為專利文獻1中揭示之製造銅合金之方法,已揭示 有以下内容。 Ο若Ni之含量達到4 wt%以上,Si之含量達到1 wt% 以上’則特別容易產生結晶粒子之粗大化,因此,為了使 結晶粒子之尺寸處於目標範圍内,於添加犯及Si之後,將 溶液於1300C以上之溫度保持5分鐘以上,使兩者完全溶 解,以0.3°C /秒以上之冷卻速度將模具内之溫度自鑄造溫度 冷卻至凝固溫度為止。 2)對熱麼延後之熱壓延材進行水中驟冷,進而以5〇〇 200949860 對經冷壓延之材料進行1分鐘〜2小時之加熱使 。粒子析出。其後,進—步實施冷^,此次以3⑼〜_ C進行30分鐘以上加熱,使小粒子析出。 3)於熱壓延結束之後進行冷卻之際不進行驟冷, 以5〇0〜赋保持1分鐘〜2小時使大粒子析出之後再進 行驟冷…實施冷塵延後,此次以3〇〇〜崎進行%分 鐘以上之加熱,使小粒子析出。 專利3977376號公報(專利文獻2)中已揭示··著眼於 銅合金組織中之難析出物、以及其他析出物之粒徑進 而著眼於其分布密度之比例與抑制結晶粒之粗大化之關 係,而含有由Ni及Si所構成之析出物X、及不含有犯及 以中之-者或兩者之析出物γ,上述析出物χ之粒徑設為 0.001〜0.1 "m,上述析出物Υ之粒徑設為化…〜^ "爪。Among the precipitated hardened copper alloys, a Cu-Ni-Si纟 copper alloy which is generally called a Carson-based alloy has a relatively high copper alloy which is excellent in electrical conductivity, strength, stress relaxation property and bending workability, and It is one of the alloys currently being developed in the industry. This copper alloy improves strength and electrical conductivity by depositing fine & intermetallic compound particles into a copper matrix. 3 200949860 Impact. The precipitation state of the Ni-Si compound particles is caused by the alloy characteristics. Patent No. 3,797,736 (Patent Document u, the particles of the in-service compound particles are pinched. The side is „上和二存3 "m (small particles) and Ni_Si compound particles The particle size is 〇〇3 in m~_ (large particles)' and the ratio of the number of small particles/A particles is set to 1.5 or more. • It also reveals that the small particle size of the particle size is less than G G3 # m It mainly improves the strength and heat resistance of the alloy, but it has little benefit for the shear processability. On the other hand, it also reveals that the large particles with the above particle size have little benefit for improving the strength and heat resistance of the alloy. However, when the shearing process is performed, the stress is concentrated and the source of the microcracks is generated, and the shearing workability is remarkably improved. Further, the copper alloy disclosed in Patent Document 1 has copper as an electric and electronic component. A copper alloy having excellent properties such as strength and heat resistance required for the alloy and having excellent shear workability. As a method for producing a copper alloy disclosed in Patent Document 1, the following has been disclosed. When the content is 4 wt% or more and the content of Si is 1 wt% or more, the crystal particles are particularly likely to be coarsened. Therefore, in order to make the size of the crystal particles within the target range, the solution is applied to the 1300 C after the addition of Si. The above temperature is maintained for 5 minutes or more, so that the two are completely dissolved, and the temperature in the mold is cooled from the casting temperature to the solidification temperature at a cooling rate of 0.3 ° C /sec or more. 2) The hot rolled material after the heat is delayed The mixture was quenched in water, and the cold-rolled material was heated for 5 minutes to 2 hours with 5〇〇200949860. The particles were precipitated. Thereafter, the cold was further carried out, and this time was carried out for 3 minutes (3) to _C for 30 minutes. The above is heated to precipitate small particles. 3) When cooling is performed after the completion of the hot rolling, the cooling is not performed, and the large particles are precipitated after being held for 5 minutes to 2 hours, and then quenched. After the delay, the small particles are precipitated by heating for 3 minutes or more, and the small particles are precipitated. Patent Document 3977376 (Patent Document 2) discloses that it is difficult to form a precipitate in a copper alloy structure, and the like. Precipitate The particle size of the object further focuses on the relationship between the distribution density and the coarsening of the crystal grains, and contains precipitates X composed of Ni and Si, and precipitates containing no or both of them. The substance γ, the particle size of the precipitate χ is set to 0.001 to 0.1 " m, and the particle size of the precipitate Υ is set to ....

設為108〜1012個/mm2,將析出物γ之數量設為W 又,其中亦揭示:為了兼顧強度與彎曲加工性,將析出物X 之數量設為析出物Y之20〜2000倍’或將析出物χ之數量 10! 個 /mm2 作為專利文獻2中揭示之製造銅合金之方法,已揭示 有以下内容。 對铸鍵進行熱壓延時,以20〜2〇〇°c/,丨、| w小—之升溫速度 將鑄錠加熱’於850〜105(TCx0.5〜5小昧夕μ “ 〕’!、旰之間進行埶壓 延,將熱壓延之結束溫度設為300〜700t:而進行驟冷。藉 此產生析出物X及Υ»熱壓延之後,例如將固溶化熱=理、 退火、冷壓延加以組合而形成所需之板厚。 5 200949860 上述固溶化熱處理,其係目的為使鑄造或熱加工時析 出之Ni及Si再固溶,同時使該犯及si再結晶之熱處理。 上述固溶化熱處理之溫度係根據所添加之犯之量來調整, 例如’ Νι量未達2.0〜2.5質量%時上述溫度為65〇〇c,犯 量未達2.5〜3.0質量%時上述溫度為8〇代,犯量未達3 〇 〜3.5質量%時上述溫度為85〇。。,%量未達3 $〜〇質量 %時上述溫度為900。。,Ni量未達4.0〜4.5質量❶/〇時上述溫 度為95(TC ’ Ni量為4.5〜5〇質量%時上述溫度為9峨。 [專利文獻1]日本專利3797736號公報 [專利文獻2]曰本專利3977376號公報 【發明内容】 發明所欲解決之問, 專利文獻1所揭示之銅合金中,僅對小粒子與大粒子 之個數之比率進行了研究,並未涉及粒子之個數密度。又, 專利文獻1中,藉由進行兩次時效處理而使大粒子與小粒 子分別析出,但第二次析出之小粒子與第一次相比較,由 於固溶之Ni、Si濃度較低,因而難以析出,且由於個數密 度、粒子徑均較小,因此對強度產生之有益影響並不充分 (參照下述比較例5)。又,進行兩次時效處理之方法亦存 在以下問題:固溶之Ni、Si量會因第_次時效處理而產生 變化’因此,難以對粒子徑、密度進行控制。 專利文獻2所揭示之銅合金中,僅將N“si化合物粒子 之粒徑控制於〇·〇〇1〜0·1/ζηι之範圍内,對於粒徑更大之 Ni-Si化合物粒子對合金特性所造成之影響並未進行研究。 200949860 專利文獻2所揭示之大粒子係不含有Ni及Si中之一者或兩 者之析出物。此種大粒子會因添加元素之量或溫度條件而 粗大化’容易對彎曲加工性造成不良影響(參照下述比較 例 1 5、16 及 1 7 )。 因此,本發明之課題在於:藉由更嚴格地控制Ni-Si化 ' 合物粒子之分布狀態而提高卡遜系合金之特性。 ΜΑ;題之拮術丰段 D 本發明者為了解決上述問題而反覆進行了專心研究之 後獲知:將析出至銅基質之Ni-Si化合物粒子區分為主要容 易析出至結晶粒内之粒徑為〇〇1 以上且未達# m之Ni-Si化合物粒子(小粒子)、及主要容易析出至結晶 粒界之粒徑為〇·〇5 以上且未達5.0 //m之Ni-Si化合 物粒子(大粒子),並控制各自之大小與個數密度,.藉此 可獲得強度及導電率之平衡優異、彎曲加工性亦良好之卡 遞系合金。具體而言,本發明者發現有效之方法係將小粒 珍子控制為0.01 以上且未達〇 〇5 之範圍之大小, 將其個數密度控制為106〜1〇ι〇個/mm2,並且將大粒子控制 為0.05 μ m以上且未達5.〇 之範圍之大小,將其個數 密度設為上述小粒子之個數密度之1/1〇〇〇〇〜1/1〇。 以上述見解為基礎而完成之本發明之一形態係一種電 子材料用銅合金,其係含有Ni: 0.4〜6_0質量%、Si : i 〜2.0質量。/〇,且剩餘部分由cu及不可避免之雜質所構成, 其存在粒徑為〇.〇1 以上且未達〇〇5 "爪之犯以化 合物小粒子、及粒徑為〇 〇5 以上且未達5 〇以爪之 7 200949860It is set to 108 to 1012 pieces/mm2, and the number of precipitates γ is set to W. It is also revealed that the number of precipitates X is set to 20 to 2000 times of the precipitate Y in order to achieve both strength and bending workability. The method of producing a copper alloy disclosed in Patent Document 2 as the method of producing a copper alloy of 10!/mm2 has revealed the following. The casting key is subjected to a hot pressing delay, and the ingot is heated at a heating rate of 20 to 2 〇〇 ° c /, 丨, | w small - at 850 to 105 (TCx 0.5 to 5 昧 昧 μ "" And rolling the crucible between the crucibles, and setting the end temperature of the hot rolling to 300 to 700 t: and quenching, thereby generating precipitates X and Υ» after hot rolling, for example, solid solution heat = annealing, annealing, Cold rolling is combined to form a desired thickness. 5 200949860 The above-mentioned solution heat treatment is designed to heat-dissolve Ni and Si precipitated during casting or hot working, and to heat-treat the Si and recrystallize the above. The temperature of the solution heat treatment is adjusted according to the amount of the added amount, for example, the above temperature is 65 〇〇c when the amount of Νι is less than 2.0 to 2.5% by mass, and the temperature is 8 when the amount is less than 2.5 to 3.0% by mass. In the case of the Sui Dynasty, the above temperature is 85 〇 when the amount is less than 3 〇 to 3.5% by mass. The above temperature is 900 when the amount is less than 3 $ 〇 mass %. The amount of Ni is less than 4.0 to 4.5 ❶ / When the temperature is 95 (the amount of TC 'Ni is 4.5 to 5 〇 mass%, the above temperature is 9 峨. [Patent Document 1] Japanese Patent 3 In the case of the copper alloy disclosed in Patent Document 1, only the ratio of the number of small particles to large particles is studied. The number density of the particles is not involved. Further, in Patent Document 1, the large particles and the small particles are separately precipitated by performing the aging treatment twice, but the second particles which are precipitated for the second time are compared with the first time because Since the concentration of Ni and Si in solid solution is low, precipitation is difficult, and since the number density and the particle diameter are small, the beneficial effect on the strength is not sufficient (refer to Comparative Example 5 below). The method of aging treatment also has the following problem: the amount of Ni and Si dissolved in solid solution changes due to the first aging treatment. Therefore, it is difficult to control the particle diameter and density. In the copper alloy disclosed in Patent Document 2, only The particle size of the N "si compound particles is controlled within the range of 〇·〇〇1~0·1/ζηι, and the influence of the Ni-Si compound particles having a larger particle size on the alloy properties has not been studied. 200949860 Patent The large particles disclosed in 2 do not contain precipitates of one or both of Ni and Si. Such large particles are coarsened by the amount of added elements or temperature conditions, and are easily adversely affected by bending workability ( Reference is made to the following Comparative Examples 1 5, 16 and 17). Therefore, an object of the present invention is to improve the characteristics of the Carson-based alloy by more strictly controlling the distribution state of the Ni-Si compound particles. In order to solve the above problems, the inventors have intensively studied and found out that the Ni-Si compound particles precipitated into the copper matrix are classified into particles which are mainly liable to be precipitated into the crystal grains. Ni-Si compound particles (small particles) which are not more than #m, and Ni-Si compound particles (large particles) which are mainly precipitated to the grain boundary and have a particle diameter of 〇·〇5 or more and less than 5.0 //m In addition, the size and the number density of each are controlled, whereby a card bond alloy excellent in balance between strength and conductivity and excellent in bending workability can be obtained. Specifically, the inventors have found that an effective method is to control the small particles to a size of 0.01 or more and less than the range of 〇〇5, and control the number density thereof to 106 to 1 〇ι〇/mm2, and The large particle is controlled to be 0.05 μm or more and less than the range of 5.〇, and the number density thereof is set to 1/1 〇〇〇〇 to 1/1 〇 of the number density of the small particles. One aspect of the present invention which is completed based on the above findings is a copper alloy for an electronic material containing Ni: 0.4 to 6_0% by mass and Si: i to 2.0 mass. /〇, and the remainder consists of cu and unavoidable impurities, which have a particle size of 〇.〇1 or more and do not reach &5 " claws with small particles of compound and particle size of 〇〇5 or more And less than 5 〇 to the claw 7 200949860

Ni-Si化合物大粒子,小粒子 /mm2,大粒子之個數密度為 1/10000〜1/1〇 0 之個數密度為1〇6〜1〇丨〇個 上述小粒子之個數密度之 士二肖疋實施形態中’本發明之電子材料用銅合金其 大粒子之平均粒徑相對於小粒子之平均粒金其 100。 % 1〜 於另一特定實施形態中 從與壓延方向平行之厚度方 晶粒徑以對應圓直徑表示為 ,本發明之電子材料用銅合金 向之剖面進行觀察時,平均結 5〜30私m。 於另-特定實施形態中’本發明之電子材料用銅合金 進一步含有合計最大為U質量%之選自Cr、C〇、Mg、Mn、Large particles of Ni-Si compound, small particles/mm2, the number density of large particles is 1/10000~1/1〇0, and the number density is 1〇6~1, the number density of the above small particles In the embodiment of the present invention, the average particle diameter of the large particles of the copper alloy for electronic materials of the present invention is 100 with respect to the average grain size of the small particles. % 1〜 In another specific embodiment, the thickness of the square crystal grain parallel to the rolling direction is represented by the corresponding circle diameter. When the copper alloy for electronic material of the present invention is observed in the cross section, the average knot is 5 to 30 m. . In another embodiment, the copper alloy for an electronic material of the present invention further contains a total of U mass% selected from the group consisting of Cr, C〇, Mg, and Mn.

Fe、Sn、Zn' A1及P中之1種或2種以上。 於另一形態中,本發明係關於一種包含本發明之電子 材料用銅合金之伸銅品。 於另形態中,本發明係關於一種含有本發明之電子 材料用鋼合金之電子零件。 之效果 根據本發明’可更有效地享受析出至銅基質中之Ni-Si 化《物粒子對合金特性帶來之益處因此可提高卡遜系合 金之特性。 【實施方式】One or more of Fe, Sn, Zn' A1 and P. In another aspect, the present invention relates to a copper-clad product comprising the copper alloy for an electronic material of the present invention. In another aspect, the invention relates to an electronic component comprising the steel alloy for an electronic material of the invention. EFFECTS According to the present invention, it is possible to more effectively enjoy the benefits of Ni-Si-formed particles which are precipitated into a copper matrix, which can improve the characteristics of the alloy. [Embodiment]

Si之添加斧Si addition axe

Nl及Si藉由實施適當之熱處理而形成作為金屬間化合 物之Ni-Si化合物粒子(Ni2Si等),可實現高強度化而不 200949860 會使導電率劣化。 若Si或Νι之添加量過少則 加量過多則雖然可實古 ”、獲得所需之強度,若添 而熱加工性下降。又,強度化,但導電率顯著下降,從 造時之氣孔之原因 有時會固溶於犯中而成為溶解鎿 進行中間加工時弓|起斷裂若增:^的添加量,則有可能於 生反應,因此,若s. *與C發生反應或者與〇發 ❹ φ 物,從而於f曲時弓丨起^加量較多,則會形成極多之夹雜 因此,適當之Sii^ 、、量為〇. 1〜2_〇質量❶/〇,較佳Jb 〇 9 〜1.5重量%。適當之M.本 只里。敉佳為0.2 之^添加量為〇.4〜6.0質量%,較佳為 1.0〜5.0質量%。 执ί王两 N i - S i化合物粒+夕t 子之析出物一般係以化學計量學 構成,使Ni與Si之皙吾屮址匕 τ置宇組成而 質量比接近於作為金屬間化 之質量組成比(Ni之眉孚县, Nl2Sl 之原子量x2: Si之原子量以),亦Nl and Si can form a Ni-Si compound particle (Ni2Si or the like) as an intermetallic compound by performing appropriate heat treatment, thereby achieving high strength without deteriorating the conductivity of 200949860. If the amount of addition of Si or Νι is too small, the amount of addition is too large, although it can be practical, and the required strength is obtained. If it is added, the hot workability is lowered. Further, the strength is increased, but the electrical conductivity is remarkably lowered, and the pores are formed from the time of creation. The reason is that it is dissolved in the sin and becomes dissolved. When the intermediate processing is performed, if the amount of addition is increased, the amount of addition may be a reaction. Therefore, if s. * reacts with C or with hair ❹ φ, so that when f is curved, the amount of the bow is increased, and a large amount of inclusions are formed. Therefore, the appropriate Sii^, the amount is 〇. 1~2_〇quality ❶/〇, preferably Jb 〇9 〜1.5% by weight. Appropriate M. This is only 5%. The amount of 敉佳 is 0.2 添加.4~6.0% by mass, preferably 1.0~5.0% by mass. 执ί王两N i - S The precipitates of the compound particles + tt sub-groups are generally composed of stoichiometry, so that the Ni and Si 皙 皙 屮 匕 置 置 置 置 置 置 置 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 ( County, the atomic weight of Nl2Sl x2: the atomic weight of Si), also

Ni與Si之質量比吟盔XT./0. J Piif 為Ni/Si = 3〜7,較佳設為3.5〜5,蘊 此可獲得良好之導電性。若Ni之比率高於上述質量 比,則導電率谷易下降,若以之比率高於上述質量組成比, 則熱加工性容易因粗大之Ni Si結晶物而劣化。 其他元音之流· h (1 ) Cr' CoThe mass ratio of Ni to Si is XT./0. J Piif is Ni/Si = 3 to 7, preferably 3.5 to 5, so that good electrical conductivity can be obtained. When the ratio of Ni is higher than the above mass ratio, the conductivity is liable to decrease, and if the ratio is higher than the mass composition ratio, the hot workability is likely to be deteriorated by the coarse Ni Si crystal. Other vowel streams · h (1 ) Cr' Co

Cr、Co固溶於Cu中,並抑制固溶化處理時之結晶粒 之粗大化》又’該Cr、c〇提高合金強度。於時效處理時形 成並析出矽化物,亦可有助於改善強度及導電率。該等添 加το素幾乎不會降低導電率,因此可積極地添加,但當添 9 200949860 加量過多時,則會有損害特性之虞》因此’可添加合計最 大為1.0質量%之Cr及Co中之一者或兩者’較佳為添加 0·005〜1 .〇 質量 %。 (2 ) Mg> ΜηCr and Co are solid-dissolved in Cu, and coarsening of crystal grains during the solution treatment is suppressed. Further, the Cr and c are used to increase the strength of the alloy. The formation and precipitation of telluride during aging treatment can also help to improve strength and electrical conductivity. These additions of τ agglomerates hardly reduce the conductivity, so they can be actively added. However, when the addition amount of 2009 9498 is too large, there is a risk of damage. Therefore, it is possible to add a total of 1.0% by mass of Cr and Co. One of them or both 'is preferably added 0·005~1.〇% by mass. (2) Mg> Μη

Mg或Μη會與〇發生反應’因而可獲得炫液之脫氧效 果。又,一般而言,Mg或Μη係作為提高合金強度之元素 而添加之元素。最著名之效果係提高應力緩和特性,即所 謂之抗潛變特性。近年來,隨著電子設備之高積體化,有 高電流流動’而且於如BGA ( Ball Grid Array,球狀矩陣) 型之散熱性低之半導體封裝中,而有由於熱而使材料劣化 之虞,從而成為故障之原因。尤其於車載之情形時擔心 ,於引擎周圍之熱而導致劣化,因而耐熱性為重要之: 題。由於該等理由,Mg4Mn係可積極添加 二添加量過多,“可忽視㈣曲加卫性造成之不 響參因此’可添加合計最大為〇_5質量%之吣及_中: 者或兩者,較佳為添加0.005〜0.4質量%。 (3 ) Sn an丹畀興Mg相同 溶於Cu中之量過客μ W不同地,SnMg or Μn will react with hydrazine' and thus the deoxidation effect of the glare liquid can be obtained. Further, in general, Mg or Μη is an element added as an element for increasing the strength of the alloy. The most famous effect is to improve the stress relaxation properties, which are called anti-potential properties. In recent years, with the high integration of electronic devices, there is a high current flow, and in semiconductor packages such as BGA (Ball Grid Array), which have low heat dissipation, there is a deterioration of materials due to heat. Oh, it becomes the cause of the malfunction. Especially in the case of the vehicle, there is concern that the heat around the engine causes deterioration, so heat resistance is important: For these reasons, the Mg4Mn system can be actively added with too much added amount, "can ignore the (four) eutectic effect caused by the refusal, so the total can be added up to 〇 _ 5% by mass and _ in: or both Preferably, it is added in an amount of 0.005 to 0.4% by mass. (3) Sn andan 畀 M Mg is dissolved in Cu in the same amount as the guest, W W differently, Sn

Sn。然而,若Sn之*以曰一 之情形時添 可添加最大為0.5質量%之811, 顯者下降。因此 %。然而,當同時禾 ' σ 0·1〜0.4質 成之不良影響,將兩者之 為了抑制對導電率: 佳最大為0.8質量%。 最大設為U質量。/… 200949860Sn. However, if Sn is added in the case of 曰1, a maximum of 0.5% by mass of 811 can be added, which is noticeably degraded. So %. However, when the adverse effects of the texture of 'σ 0·1 to 0.4 are both at the same time, the two are intended to suppress the conductivity: the maximum is 0.8% by mass. The maximum is set to U quality. /... 200949860

η Ζη Ζ

Zn具有抑制焊錫脆化之效果 多’則導電率會下降,因此可添加最大為〇 5質量%之Zn 較佳為添加〇. 1〜0.4質量%。Zn has an effect of suppressing solder embrittlement, and the conductivity is lowered. Therefore, it is preferable to add Zn of at most 〇 5 mass%, preferably 〇. 1 to 0.4 mass%.

(5) Fe ' Al ' P 該等元素亦係可提高合金強度之元素。可視需要而添 加。然而,若添加量過多,則特性會對應於添加元素而惡 化,因此,可添加最大為0.5質量%之Fe、入卜p,較佳為 添加0.005〜〇·4質量%。 若上述Cr、Co、Mg、Mn、Sn、Fe、八丨及?之合計超 過1 ·0質量% ’則容易損害製造性’因此該等之合計較佳設 為1.0質量%以下’更佳設為0 5質量%以下。 化合物_干 於本發明中,將析出至銅基質中之Ni-si化合物粒子分 為小粒子與大粒子二種’控制各自之個數密度及粒徑進 =控制該等之相互關係。於本發^,所謂小粒子,係 札粒徑為0.01 、 上且未違0·〇5心之Ni-Si化合物 ,謂大粒子’係指粒徑為〇.05 以上且未達5 ” :之:二合物粒子。小粒子係主要析出至結晶粒内之粒 化合物粒:f析出至結晶粒界之粒子。又,所謂Ni_Si ,係指藉由元素分析而檢測出犯及 于。小粒子Φ並士 π〜耻 有助於維龍 之強度及耐熱性,大粒子主要 、、、導電率及使結晶粒微細化。 析出至結晶粒内之Ni_Si化合物 物粒子,一般可成為數十 11 200949860 nm左右之微細之析出物。其中,未達〇〇5以爪之Ni-Si 化合物粒子具有錯位之釘扎效果(pinning effect),因此錯位 密度變同’容易提高合金整體之強度。該程度之粒徑之Ni_Si 化合物粒子之粒子間距離較小,數量亦較多,因此對強度 之貢獻率較高。又,因具有阻礙加熱時之錯位之移動之作 用’故使耐熱性提高。(5) Fe ' Al ' P These elements are also elements that increase the strength of the alloy. Add as needed. However, if the amount of addition is too large, the properties are deteriorated in accordance with the addition of the elements. Therefore, it is possible to add Fe to the mass of 0.5% by mass or more, preferably 0.005 to 4% by mass. What are the above Cr, Co, Mg, Mn, Sn, Fe, gossip and? When the total amount is more than 1% by mass, the manufacturing property is easily impaired. Therefore, the total amount of these is preferably 1.0% by mass or less, and more preferably 0.5% by mass or less. Compound_Dry in the present invention, the Ni-Si compound particles precipitated into the copper matrix are classified into small particles and large particles, and the respective number density and particle diameter of each of the particles are controlled to control the correlation therebetween. In the present invention, the so-called small particles are Ni-Si compounds with a particle size of 0.01 and no violation of 0·〇5, which means that the large particles 'have a particle size of 〇.05 or more and less than 5 ”: The dimeric particles, the small particles are mainly precipitated into the crystal grains, and the particles are precipitated to the crystal grain boundaries. Further, the so-called Ni_Si means that the particles are detected by elemental analysis. Φ shi π 〜 shame contributes to the strength and heat resistance of weilong, the main particles, the electrical conductivity and the refinement of the crystal grains. The Ni_Si compound particles precipitated into the crystal grains can generally become tens of 11 200949860 A fine precipitate of about nm, in which the Ni-Si compound particles which are not in the crucible 5 have a pinning effect of dislocation, and thus the dislocation density becomes the same as that of the whole alloy. Since the particle size of the Ni_Si compound particles has a small interparticle distance and a large number, the contribution rate to the strength is high, and the heat resistance is improved because it has a function of hindering the movement of the misalignment during heating.

然而,若施加較大之應變,則該程度之大小之粒子、 尤其是未達0.01 “瓜之Ni_Si化合物粒子會被剪切而使粒 子之表面積減小,因此剪切所需之力減小。因此錯位環 不會殘留而無法提高錯位密度。因此,未達〇 〇1私m之 Ni-Si化合物粒子難以提供強度。經剪切之粒子亦會再次固 溶於銅母相中而有導致導電率下降之虞。又,經剪切之粒 子並不作為再結晶之成核位置而發揮作用,因此再結晶粒 亦變粗大之可能性增加◦粗大之結晶粒會對強度或弯曲性 造成不良影響。However, if a large strain is applied, the particles of this extent, especially the Ni_Si compound particles which are less than 0.01", are sheared to reduce the surface area of the particles, so the force required for shearing is reduced. Therefore, the misaligned ring does not remain and the misalignment density cannot be increased. Therefore, it is difficult to provide strength to the Ni-Si compound particles which are less than 1 gram, and the sheared particles are again solid-dissolved in the copper matrix to cause conduction. Further, since the sheared particles do not function as nucleation sites for recrystallization, there is a possibility that the recrystallized grains become coarse and coarse, and coarse crystal grains may adversely affect strength or flexibility.

因此,有利之做法係對粒徑為〇.〇1以⑺以上且未達 之小粒子之個數密度進行控制。小粒子對強度提 高之貢獻較大’但另-方面,若小粒子變彡,則容易使導 電率下降,因此,纟了實現強度與導電率之平衡,必須將 小粒子之個數密度設為。個/mm2。小粒子之個數密 度係可利用穿透式電子顯微鏡進行組織觀察而測定。 另一方面’析出至結晶粒界之Ni_Si化合物粒子 成為數百nm〜數左右之大小之析出物。其中,〇 〇5 m以上且未達5.0 "n^Ni.Si化合物粒子可作為不被卖 12 200949860 之堅硬粒子而發揮作用e Ni_si化合物粒子與小粒子同樣地 可提南合金之強度及耐熱性,但因粒徑較大故粒子之數 量較 >、,且因粒子間距離較大,故對強度、咐熱性之貢獻 比小粒子小《然而,即使施加較大之應變亦不會被剪切, 因此幾乎不會使導電率下降。又,剪切未受剪切之粒子可 作為再結晶時之成核位置而發揮作用。因此,容易藉由大 粒子而形成微細之結晶粒。微細之結晶粒尤其有助於強度 及彎曲性。若大小超過5 〇 之粒子逐步增加則應用 於形成小粒子之Ni&Si會不足,強度容易下降。當對材料 進行Ag電鍍等時,電鍍厚度會局部性地變厚而有導致突起 狀之缺陷之虞。 因此,有利之做法係對0.05 以上且未達5 〇 之大粒子之個數密度進行控制。大粒子有助於結晶粒之微 細化及導電率之提尚,但另一方面,若大粒子變多則容 易使小粒子之個數密度下降,因此當大粒子與小粒子之數 量之比並未處於適當範圍之情形時,則無法兼顧強度與導 電率。具髏而言,若大粒子變多則強度下降,若小粒子變 多則導電率下降。因此,為了實現強度與導電率之平衡, 必須將0.05 以上且未達5.〇 之粒徑範圍中之大粒 子之個數密度設為小粒子之個數密度之1/1〇〇〇〇〜1/1〇。大 粒子之個數密度係可利用掃描式電子顯微鏡進行組織觀察 而測定。 藉由將小粒子及大粒子之平均粒徑之差控制於適當之 範圍内’可使小粒子與大粒子兩者之優點發揮作用,同時, 13 200949860 補充兩者之缺點之效果增大。較佳為將大粒子之平 _ 相對於小粒子之平均粒徑之比設為2〜1〇〇。 =粒按 結晶粒微細一事就強度及彎曲性之觀點而言是 的,但若結晶粒過小,則析出至粒界之大粒子與析出利 内之小粒子之平衡被破壞。因此,本發明之銅 至粒Therefore, it is advantageous to control the number density of small particles having a particle diameter of 〇.〇1 of (7) or more and not reaching. Small particles contribute more to the improvement of strength. However, in the case of small particles, the conductivity tends to decrease. Therefore, in order to achieve a balance between strength and conductivity, the number density of small particles must be set to . /mm2. The number density of small particles can be measured by tissue observation using a transmission electron microscope. On the other hand, the Ni-Si compound particles precipitated to the crystal grain boundaries are precipitates having a size of about several hundred nm to several. Among them, 〇〇5 m or more and less than 5.0 "n^Ni.Si compound particles can be used as hard particles not to be sold 12 200949860. e Ni_si compound particles can be used as small particles to enhance the strength and heat resistance of the alloy. Sex, but because of the larger particle size, the number of particles is smaller than that, and because of the large distance between particles, the contribution to strength and heat is smaller than that of small particles. However, even if a large strain is applied, it will not be Shearing, so that the conductivity is hardly lowered. Further, shearing the unsheared particles can function as a nucleation site at the time of recrystallization. Therefore, it is easy to form fine crystal grains by large particles. Fine crystal grains are particularly useful for strength and flexibility. If the particle size exceeds 5 逐步, the Ni&Si applied to form small particles will be insufficient and the strength will be easily lowered. When the material is subjected to Ag plating or the like, the plating thickness is locally thickened and there is a defect that causes a protrusion. Therefore, it is advantageous to control the number density of large particles of 0.05 or more and less than 5 Å. Large particles contribute to the refinement of crystal grains and the improvement of conductivity. On the other hand, if the number of large particles increases, the number density of small particles tends to decrease, so the ratio of the number of large particles to small particles is When it is not in the proper range, the strength and electrical conductivity cannot be balanced. In the case of a crucible, if the number of large particles increases, the strength decreases, and if the number of small particles increases, the conductivity decreases. Therefore, in order to achieve the balance between strength and conductivity, it is necessary to set the number density of large particles in the particle size range of 0.05 or more and less than 5. 设为 as 1/1 of the number density of small particles. 1/1〇. The number density of large particles can be measured by scanning electron microscopy for tissue observation. By controlling the difference between the average particle diameters of the small particles and the large particles within an appropriate range, the advantages of both the small particles and the large particles can be exerted, and at the same time, the effect of supplementing the disadvantages of both is increased. Preferably, the ratio of the average particle diameter of the large particles to the average particle diameter of the small particles is 2 to 1 Torr. = The grain size is fine in terms of strength and flexibility. However, if the crystal grain is too small, the balance between the large particle deposited to the grain boundary and the small particle in the precipitate is destroyed. Therefore, the copper to grain of the present invention

自與壓延方向平行之厚度方向之剖面進行觀察時,較佳: 對應圓直徑表示時之平均結晶粒徑設為5〜XWhen observing the cross section in the thickness direction parallel to the rolling direction, it is preferable that the average crystal grain size in the case of the corresponding circle diameter is set to 5 to X.

Hi 0 製造方法 以下,就纟發明之銅合金之製造方法加以說明 :之銅合金係可將Cu-N1_si系合金之慣用之製造步 基礎,同時經由一部分之特徵性步驟而製造。 首先’利用大氣熔解爐將電解銅'Ni、si :獲成之溶液。繼而,將該炫液鎊造成鑄錠。 其後’進仃熱麼延,再反覆進行冷壓延與熱處理,從 需厚度及特性之條或P熱處理中有固 =時效處理。固溶化處理中,以_〜1GGn:之高溫進行 …’使N卜Sl系化合物固溶於〇11母相中同時使c 質再結晶。有時亦將熱壓延兼用作固溶化處理。 之/了抑制結晶粒子之粗大化,重要的是於添加Ni及Si 再將溶液於猶以上之溫度保持5分鐘以上。 門二較佳於其後之熱壓延之前’對加熱溫度'保持時 間進仃控制,且對熱壓延結束時 而已知· A 孖料皿度進仃控制。然 .一般而言,SNi*Si濃度變高則於加熱溫度較 情形時,於熱壓延中會產生斷裂。因此,將㈣延前 200949860 之加熱溫度設為800〜i00(rc左右之高溫,於產生斷裂之 形時選定更低之溫度。於選定未達8()(re之較低_ 時,為了減少結晶粒子,必須延長保持時間,雖然亦受溫 度影響’但可藉由保持3小時左右而使大部分之粒子小於5 由則吏熱壓延結束時之板厚小於2〇 _,故冷卻變 快’從而可抑制無助於特性之析出物之析出。關於此時之 溫度,亦能夠以60(TC以上之高溫結束熱壓延,但在之後之 Ο ❹ 步驟中,於難以固溶化之情形時,有效的是以更低之溫度 結束熱壓延。 ^ 進而,於將熱壓延兼用作固溶化處理之情形時,有時 會藉由結束後之氣冷(放置冷卻)而使析出粒子析出因 此有效的是視需要而實施水冷等之冷卻。 又,於本發明中,嚴密地控制固溶化處理之條件。具 體而言,為了使添加元素尤其是Ni充分地固溶,根據吣 濃度而選擇一定程度以上之固溶化溫度。然而’若固溶化 溫度過高’則結晶粒徑會變得過大,因此並非固溶化溢度 高即可。具體而言,若Ni濃度較高則設為較高之溫度,大 致之標準如下:若Ni濃度為1.5%,則將固溶化溫度設為 650〜700°C,若Ni濃度為2.5%,則將固溶化溫度設為8〇〇 〜850°C,若Ni濃度為3.5〇/〇,則將固溶化溫度設為9〇〇〜 950°C左右。更一般而言,設為y=i25x + 500±25 (式中,x 為Ni之添加濃度(質量%) ,y為固溶化溫度())之 程度。此外,為了將大粒子及小粒子之析出狀態集中於本 發明所規定之範圍内’重要的是當於與壓延方向成直角之 15 200949860Hi 0 Manufacturing method Hereinafter, a method for producing a copper alloy according to the invention will be described. The copper alloy can be produced by a part of the characteristic steps of the conventional Cu-N1_Si alloy. First, a solution obtained by electrolyzing copper 'Ni, si: using an atmospheric melting furnace. Then, the bright liquid pound is caused into an ingot. After that, the heat is extended, and then the cold rolling and heat treatment are repeated, and the solid and aging treatment is performed from the strip of thickness and characteristics or the heat treatment of P. In the solution treatment, the N-Sl-based compound is solid-dissolved in the 〇11 mother phase and recrystallized from the c-phase at a high temperature of _~1GGn:. Hot rolling is also used as a solution treatment. In order to suppress the coarsening of the crystal particles, it is important to add Ni and Si and keep the solution at a temperature above the helium for 5 minutes or more. The second door is preferably controlled by the 'heating temperature' holding time before the hot rolling, and is known to be controlled at the end of the hot rolling. However, in general, when the concentration of SNi*Si becomes high, cracking occurs in hot rolling when the heating temperature is higher. Therefore, the heating temperature of (4) before the extension of 200949860 is set to 800~i00 (the high temperature of about rc, and the lower temperature is selected when the shape of the fracture is generated. When the selection is less than 8 (), the lower is lower, in order to reduce Crystallized particles must be extended for holding time, although they are also affected by temperature', but by holding them for about 3 hours, most of the particles are less than 5, and then the plate thickness at the end of the hot rolling is less than 2〇_, so the cooling becomes faster. 'The precipitation of precipitates which do not contribute to the characteristics can be suppressed. With regard to the temperature at this time, the hot rolling can be completed at a temperature of 60 (TC or higher, but in the subsequent step, when it is difficult to solidify) It is effective to end the hot rolling at a lower temperature. ^ Further, when the hot rolling is used as the solution treatment, the precipitated particles may be precipitated by air cooling after leaving (placement cooling). Therefore, it is effective to perform cooling such as water cooling as needed. Further, in the present invention, the conditions of the solution treatment are strictly controlled. Specifically, in order to sufficiently dissolve the additive element, particularly Ni, it is selected according to the concentration of ruthenium. Certain course The above solid solution temperature. However, if the solid solution temperature is too high, the crystal grain size becomes too large, so that the solid solution solubility is not high. Specifically, if the Ni concentration is high, the temperature is set to a higher temperature. The approximate standard is as follows: when the Ni concentration is 1.5%, the solution temperature is 650 to 700 ° C, and when the Ni concentration is 2.5%, the solution temperature is set to 8 〇〇 to 850 ° C, if Ni When the concentration is 3.5 〇 / 〇, the solution temperature is set to about 9 〇〇 to 950 ° C. More generally, it is set to y = i25 x + 500 ± 25 (where x is the added concentration of Ni (% by mass) y is the degree of solution temperature ()). In addition, in order to concentrate the precipitation state of large particles and small particles within the range specified by the present invention, it is important to be at right angles to the rolling direction 15 200949860

面上進行觀察時’以111溶化處理後之結晶粒徑處於5〜3〇 範圍之方式,對固溶化處理之溫度及時間進行調節。 又’若固溶化處理時之材料之板厚較大,則即使於固溶化 處理之後進行水冷,亦無法獲得充分之冷卻速度而有已 固溶之添加元素於冷卻過程中析出之虞。因此,較佳為將 實施固冷化處理時之板厚設為〇 3 以下。又,為了抑制 添加兀素之析出,較佳將自固溶化溫度至40(TC為止之平均 冷卻速度設為1(rc/秒以上,更佳設為15口秒以上。若板 厚為0.3 mm以下之程度,則可利用氣冷而達成此種冷卻逮 度,但更佳為進行水冷。然而,即使提高冷卻速度,產品 之开y狀亦會變差,因此較佳將該冷卻速度設為3〇<)c/秒以 下,更佳設為20°C /秒以下。 於固溶化處理之後,重要的是視所需之特性而以適當 之加工度(壓下率)進行冷加工。若加工度過高,則於彎 曲加工性中會表現出向異性,若加工度過低則強度不會 變咼。若謀求於提高彎曲加工性之同時藉由大粒子而提高 特性之效果’則較佳為於固溶化處理之後,進行加工度為 20〜50%之冷壓延。加工度(%)係可藉由(加工前之板厚 一加工後之板厚)/加工前之板厚χ1〇〇來表示。 又,於本發明中,時效處理之條件亦重要。當製造本When the surface was observed, the temperature and time of the solution treatment were adjusted so that the crystal grain size after the 111-melting treatment was in the range of 5 to 3 Å. Further, if the thickness of the material at the time of the solution treatment is large, even if water-cooling is performed after the solution treatment, a sufficient cooling rate cannot be obtained, and the solid-added additive element precipitates during the cooling process. Therefore, it is preferable to set the thickness of the plate when the solidification treatment is performed to 〇 3 or less. Further, in order to suppress the precipitation of the added halogen, it is preferable to set the average cooling rate from the solid solution temperature to 40 (TC to 1 (rc/sec or more, more preferably 15 or more seconds). If the thickness is 0.3 mm The following degree can be achieved by air cooling, but it is more preferably water-cooled. However, even if the cooling rate is increased, the opening y of the product is deteriorated, so it is preferable to set the cooling rate to 3 〇 <) c / sec or less, more preferably 20 ° C / sec or less. After the solution treatment, it is important to perform cold working at an appropriate degree of processing (depression ratio) depending on the desired characteristics. When the degree of processing is too high, the anisotropy is exhibited in the bending workability, and if the degree of processing is too low, the strength does not become excessive. If the effect of improving the bending workability is improved by the large particles, it is preferable. After the solution treatment, cold rolling is performed at a processing degree of 20 to 50%. The degree of processing (%) can be obtained by (the thickness before processing, the thickness of the sheet after processing) / the thickness before processing χ 1〇〇 In addition, in the present invention, the conditions of aging treatment are also important. Manufacturing

發明之銅合金時,較佳為利用一次時效處理而控制大粒子 及小粒子之分布狀態。專利文獻丨中係採用藉由施行兩次 時效處理而使大粒子及小粒子析出之方法,但一般而言, 已知當部分析出物析出之狀態下’固溶於銅中之Ni、Si之 16 200949860 濃度會變低’㈣卜si不易擴散,導致變得難以析出。因 此,本發明無法獲得所需之個數密度之小粒子。又,於進 行第二次之時效處理時,由於會受到於第一次之時效處理 中產生之析出粒子之大小之影響,故難以對粒子徑及密度 • 進行控制。 , 為了利用一次之時效處理而使大粒子與小粒子處於所 需之範圍’前提係已於前步驟中,適當地進行了固溶化處 ❹ 理及冷壓延,但重要的是使溫度與時間處於適當之範圍。 利用該時效處理而使強度及導電率上升。時效處理係以3〇〇 〜600°C溫度進行0.5〜50 h,但加熱溫度越高則所需時間越 短,加熱溫度越低則所需時間越長。其原因在於:若以高 溫進行長時間加熱,則Ni_Si化合物粒子會容易粗大化若 以低溫進行短時間加熱,則Ni_Si化合物粒子不會充分地析 出。具體而言,於300〜50(TC時可設為y=_〇 115χ+61 (χ 為加熱溫度(°C ) ,y為時效時間(h))左右;於5〇〇〜 Q 60〇C 時,可設為 y=-0.0275x+ 17.25( X 為加熱溫度(〇c ), y為時效時間(h))左右。例如,於60(rc時設為〇 5 h〜l h左右,於500。(:時設為2h〜5h左右,於4〇〇t時設為ι〇 h〜20 h即可◊為了獲得更高之強度,亦可於時效處理之後 進行冷壓延。在時效處理之後進行冷壓延之情形時,亦可 於冷壓延之後進行應力消除退火(低溫退火)。 本發明之銅合金可加工成各種伸銅品,例如加工成 板、條、管、棒及線,進而本發明之銅合金可使用於要求 兼具有高強度與高導電性(或者導熱性)之導線架、連接 17 200949860 器、接腳 '端子、a電器、開關、及二次電池用络材等之 電子設備零件。 實施例 以下揭示本發明之具體例,但該等實施例係為了更容 易理解本發明及其優點而提供,並非對本發明進行限定。 於高頻熔解爐中,以l30(TC將表1〜表4中記載之各 種成分組成之銅合金溶化,鑄造成厚度為3〇 鑄錠。 繼而’以u)m:將該⑽加& i小時之後,進行熱壓延直 至板厚為10 mm為止(熱壓延結束時之材料溫度為則 °C),並迅速地於水中進行冷卻。為了除去表面之鏽,施 行表面研磨直至厚度mm Μ,然㈣由冷壓延而製成 厚度為0.2 mm之板。其次’以表!〜表4中記載之各條件 實施固溶化處理之後,於水中進行冷卻直至達到室溫為 止。此時,結晶粒徑會根據添加元素濃度或固溶化條件而 產生變化。其後’進行冷壓延直至厚度為〇1職為止最 後以表i〜表4中記載之各條件,於惰性環境氣氛中施行時 效處理,從而製造各試驗片。表丨(實施例)及表3 (比較 例)表示Cu-Ni-Si系銅合金之製造例,表2及表4表示進 一步適當地添加有 Mg、Cr、Sn、Zn、Mn、Fe 之 Cu.Ni_Si 系銅合金之製造例。 對以上述方式獲得之各合金之各特性進行評價,將結 果記載於表1〜表4中。 ’對抗拉In the case of the copper alloy of the invention, it is preferred to control the distribution state of the large particles and the small particles by the primary aging treatment. In the patent document, a method of precipitating large particles and small particles by performing two aging treatments is generally employed, but in general, Ni and Si which are solid-dissolved in copper are known in a state where the analyte is precipitated. 16 200949860 The concentration will become lower '(4) Bu si is not easy to spread, making it difficult to precipitate. Therefore, the present invention cannot obtain small particles of a desired number density. Further, since the second aging treatment is affected by the size of the precipitated particles generated in the first aging treatment, it is difficult to control the particle diameter and density. In order to utilize the primary aging treatment, the large particles and the small particles are in the required range. The premise is that in the previous step, the solution treatment and the cold rolling are appropriately performed, but it is important to keep the temperature and time at the same time. The appropriate range. The strength and electrical conductivity are increased by this aging treatment. The aging treatment is carried out at a temperature of 3 Torr to 600 ° C for 0.5 to 50 h, but the higher the heating temperature, the shorter the time required, and the lower the heating temperature, the longer the time required. The reason for this is that the Ni_Si compound particles are easily coarsened when heated for a long period of time at a high temperature. If the heating is performed for a short period of time at a low temperature, the Ni_Si compound particles are not sufficiently precipitated. Specifically, at 300~50 (TC can be set to y=_〇115χ+61 (χ is the heating temperature (°C), y is the aging time (h)); at 5〇〇~ Q 60〇C In the case of y = -0.0275x + 17.25 (X is the heating temperature (〇c), y is the aging time (h)). For example, at 60 (rc is set to 〇5 h~lh, at 500). (: It is set to 2h~5h, and it can be set to ι〇h~20h at 4〇〇t. In order to obtain higher strength, cold rolling can be performed after aging treatment. Cold after aging treatment In the case of calendering, stress relief annealing (low temperature annealing) may also be performed after cold rolling. The copper alloy of the present invention can be processed into various copper extending articles, for example, into sheets, strips, tubes, rods, and wires, and further, the present invention Copper alloy can be used for lead frames that require high strength and high electrical conductivity (or thermal conductivity), and electronic equipment such as 17200949860, pin 'terminals, a electric appliance, switch, and secondary battery. EXAMPLES Specific examples of the present invention are disclosed below, but the examples are for easier understanding of the present invention and its advantages. The present invention is not limited to the present invention. In the high-frequency melting furnace, a copper alloy having various components described in Tables 1 to 4 is melted at 1400 (TC), and cast into a thickness of 3 Å ingots. m: After adding (10) to < i hours, hot rolling is performed until the sheet thickness is 10 mm (the material temperature at the end of hot rolling is °C), and it is rapidly cooled in water. The rust is subjected to surface grinding until the thickness is mm Μ, and (4) is made by cold rolling to a plate having a thickness of 0.2 mm. Secondly, after solid solution treatment is carried out under the conditions described in Tables ~ to 4, it is cooled in water until it is cooled. At this time, the crystal grain size changes depending on the concentration of the added element or the solid solution condition. Thereafter, the film is subjected to cold rolling until the thickness is 〇1, and finally, the conditions described in Tables i to 4, Each test piece was produced by aging treatment in an inert atmosphere. Tables (Examples) and Table 3 (Comparative Examples) show examples of production of Cu-Ni-Si-based copper alloys, and Tables 2 and 4 show further appropriate Added with Mg, Cr, S Example of production of Cu.Ni_Si-based copper alloy of n, Zn, Mn, and Fe. Each characteristic of each alloy obtained as described above was evaluated, and the results are shown in Tables 1 to 4.

關於強度,於壓延平行方向上進行抗拉試驗 強度及0.2%安全限應力(MPa)進行測定。 18 200949860 使用雙電橋對艚積電阻率進行測定,藉 (%IACS)。 々料電率 寶曲性之評價中’依照JISH3m進行G。。 曲轴與Μ延方向成直角之方向)及如卿(_曲轴與^ 方向相同之方向)之Wf曲試驗,測定不產生斷裂 半徑(MBR)相對於板厚⑴之比即MBR/t值。 於固溶化處理之後,立即利用掃描式電子顯微鏡 (SEM,Scanning Electron Microscope ) HITACHI-S-4700測定結晶粒程β藉由FIB將與壓延方向平 行之厚度方向之剖面切斷而製成試料。結晶粒徑係於加工 方向之寬度方向上,求出1〇個結晶粒之平均值。此外,因 於固溶化處理之後進行冷麼延’故於最終產品中,結晶粒 厚f方向碎裂’並沿壓延方向延伸但面積被保留因 此獲件與對最終產品進行組織觀察時相同之結果。 可利用以下之方法,自最終產品測定結晶粒徑。首先, 對與壓延方向平打之厚度方向之剖面進行電解研磨,藉由 …來對刮面組織進行觀冑,對每單位面積之結晶粒之數 里進仃叶數。繼而’將整個觀察視野之面積進行總計,將 八除Μ所計數出之結晶粒之總數計算出每一個結晶粒之 積可根據該面積而計算出具有該面積相同之面積之圓 之直=(對應圓直徑)’並將其作為平均結晶粒徑。 可自任意之剖面對大粒子及小粒子之粒徑進行觀察。 係以如下方式實施:相對於與產品之壓延方向平行 LVg|j 藉由掃描式電子顯微鏡(HITACHI-S-4700)對10 19 200949860 個視野之大粒子進行觀察,藉由穿透式電子顯微鏡 (HITACHI-H-9000)對10個視野之小粒子進行觀察,以可 觀察到100個左右之各個粒子的方式施行。於析出物之大 小為5〜100 nm之情形時,以50萬倍〜70萬倍之倍率進行 拍攝’於析出物之大小為1〇〇〜5000 nm之情形時,以5〜 10萬倍之倍率進行拍攝《此外,析出物之大小小於5 nm則 無法觀察。析出物之大小大於5000 nm可利用掃描式電子 顯微鏡進行觀察。 關於以上述方式觀察到之粒子’可根據各個粒子之長 ❹ 徑與短徑來計算面積,根據該面積而計算出具有與該面積 相同之面積之圓之直徑(對應圓直徑),將其作為粒徑。 根據粒徑而分為小粒子與大粒子,分別計算粒子徑與粒+ 之數量之總和’將粒子徑之和除去粒子數而作為平均粒子 徑,將粒子數之和除以觀察視野之總計面積而求得個數密 度。此處,所謂長徑’係指穿過粒子之重心,於兩端具有 與粒子之邊界線之交點之線段中最長線段的長度;所謂短 徑,係指穿過粒子之重心,於兩端具有與粒子之邊界線之 〇 交點之線段中最短線段的長度。 藉由使用搭載有EDS ( Energy Dispersive Spectrometer,能量分散光譜儀)之掃描式電子顯微鏡、尤 其疋7G素分析精度高之場致發射式電子顯微鏡之元素分布 圖之方法,確認所觀察到之粒子為Nisi化合物粒子;藉由 使用搭載有 EELS ( Electron Energy Loss Spectroscope,電 子能量損失光譜儀)之穿透式電子顯微鏡之元素分布圖之 20 200949860 方法,確認所觀察到之粒子為較小之析出物。 再者,於最終產品中’有錯位非常多且難以觀察到析 出物之情形,於該情形時,為了方便觀察,亦可以不會析 出析出物之20(TC左右之溫度實施去應力退火。又,—般係 * 使用電解研磨法來製作穿透型電子顯微鏡之試料,但亦可 ^ 藉由FIB ( Focused I〇n Beam :聚焦離子束)來製你兮 進行測定。 瑕作缚膜並 〇Regarding the strength, the tensile strength test and the 0.2% safety limit stress (MPa) were measured in the parallel direction of rolling. 18 200949860 The measured resistivity is measured using a double bridge, by (%IACS). The rate of electric charge is evaluated in the evaluation of Baoqu's according to JISH3m. . The Wf curve test of the crankshaft at a right angle to the direction of the extension and the direction of the same direction of the crankshaft and the direction of the ^, the ratio of the fracture radius (MBR) to the thickness (1), i.e., the MBR/t value, is determined. Immediately after the solution treatment, the crystal grain size β was measured by a scanning electron microscope (SEM, Scanning Electron Microscope) HITACHI-S-4700, and a cross section in the thickness direction parallel to the rolling direction was cut by FIB to prepare a sample. The crystal grain size was in the width direction of the machine direction, and the average value of one crystal grain was determined. In addition, since the solution treatment is followed by a cold delay, so in the final product, the crystal grain thickness f is broken in the direction and extends in the rolling direction but the area is retained, so that the obtained result is the same as that of the final product. . The crystal grain size can be determined from the final product by the following method. First, the cross section in the thickness direction of the flattening direction is subjected to electrolytic polishing, and the scraped surface structure is observed by ..., and the number of leaves is increased in the number of crystal grains per unit area. Then 'to total the area of the entire field of view, calculate the total number of crystal grains counted by the eight mites, calculate the product of each crystal grain, and calculate the circle with the same area according to the area=( Corresponding to the circle diameter)' and as the average crystal grain size. The particle size of large and small particles can be observed from any profile. It is carried out as follows: LVg|j is parallel to the rolling direction of the product. Large particles of 10 19 200949860 fields of view are observed by a scanning electron microscope (HITACHI-S-4700) by a transmission electron microscope ( HITACHI-H-9000) Observed small particles of 10 fields of view and performed them in such a manner that about 100 particles were observed. When the size of the precipitate is 5 to 100 nm, the image is taken at a magnification of 500,000 to 700,000 times. When the size of the precipitate is 1 to 5000 nm, it is 5 to 100,000 times. Shooting at magnification. In addition, the size of the precipitate is less than 5 nm and cannot be observed. The size of the precipitates greater than 5000 nm can be observed using a scanning electron microscope. With respect to the particles observed in the above manner, the area can be calculated from the long diameter and the short diameter of each particle, and the diameter (corresponding to the circle diameter) of the circle having the same area as the area can be calculated from the area. Particle size. Divided into small particles and large particles according to the particle diameter, and the sum of the particle diameter and the number of particles + is calculated. The sum of the particle diameters is taken as the average particle diameter, and the sum of the number of particles is divided by the total area of the observation field. And find a number density. Here, the term "long diameter" refers to the length of the longest line segment in the line segment passing through the center of gravity of the particle at the intersection of the boundary line with the particle at both ends; the so-called short diameter means the center of gravity passing through the particle and has The length of the shortest line segment in the line segment that intersects the boundary line of the particle. It was confirmed that the observed particles were Nisi by using a scanning electron microscope equipped with an EDS (Energy Dispersive Spectrometer), and in particular, an elemental distribution map of a field emission electron microscope with high precision analysis. The compound particles were confirmed to be smaller precipitates by using the elemental distribution map of a transmission electron microscope equipped with an EELS (Electron Energy Loss Spectroscope) 20 200949860 method. Furthermore, in the final product, there are many cases where there are many misalignments and it is difficult to observe precipitates. In this case, for the convenience of observation, it is also possible to precipitate the precipitates 20 (the temperature around TC is subjected to stress relief annealing. , General* Use electrolytic grinding to make a sample of a penetrating electron microscope, but it can also be measured by FIB (Focused I〇n Beam).

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評價 彎曲加工性 B.W (MBR/t) fS fS rj — — IS GW (MBR/t) is <s η •s «Μ 導電率 (%UCS) QO >η 9 5 0.2% 安 全限應力 (MPa) 00 o s 00 S 卜 00 卜 s s 00 嫌《2 4 % VO s 00 00 So g 00 00 s 卜 s 析出物 小粒子個 數密度 (個/mm2> 2xlOA8 3χ10Λ8 4χ10Λ8 3χ10Λ8 3χ10Λ8 3χ10Λ8 3xlOA8 小粒子/ 大粒子之 數董比 10A4 10Λ4 10Λ4 10A4 10Λ4 10Λ4 10A4 大粒子/ 小粒子之 尺寸比 in o 1 ο js V) 00 — 小粒子徑 (um) 2 ο 2 — 2 s 2 屮t 4 S < «1 — 5 ν〇 V) — 00 1"N IQ — 製造條件 時效處理條件 時間/h m νϊ ΙΛ Vi «η a 度/ic tn ιη !ϊ V) 1/) 穿 in 穿 If) 穿 始基粒 之大小/ fim — S ο 00 rj 2 固溶化 處理溪 度/t o S Ο 器 ο e o s e 00 s 00 合金級成 第二添加元素 /Wt% o e Mg : 0.1-Cr : 0.1 Sn : 0.3-Zn : 0.3 fS e a s Cr : 0.1«C〇 : 0_1 Fe : 0.1-P : 0.03 笫一添加元 jt/wt% 〇 ΙΛ e s CD in o V) ό o e 2 ri 5 r4 话 ri s ri e V) 话 S rl |實施例22| 1實施例23| 1實施例24| |實施倒2S| 1資施例26 1資施例27| |實施例28 200949860 【ε<】 評償 彎曲加工性 B.W (MBR/t) 因热麈廷中發生断裂,故無法進行調査 因熱壓廷中發生斷裂,故無法進行調查 ve ο 0Θ ο 00 00 ο V6 GW (MBR/t) VI 对 μ Φ ㈣ — 導霓率 (%IACS) 5! oe 5 3 这 导 se 0.2%$ 全WL應力 (MPa) 00 \n V) S3 〇 s S 00 QO 这 ο 卜 IT) s Μ 抗拉強度 (MPa) 00 ΙΛ «Λ 00 00 s 00 3 Ο 内 VC If) 的 00 析出物 小粒子個 數密度 (個/mm2) 2χ10Λ4 3χ10Λ10 5χ10Λ2 4χ10Λ4 1χ10Λ5 1 1 1 2χ10Λ8 小粒子/ 大粗子之 數量比 10Λ2 10A7 10Λ3 10Λ2 10Λ3 1 1 10Λ7 大粒子/ 小粗子之 尺寸比 203.3 〇\ 5 00 00 1 ο 1 ιη 小耝 子《 (rnn) 00 1/) ㈣ S 1 00 ΡΠ 1 大粒 子程 (nm) 5754 W) 3578 •Λ 1 00 1 f"N 製造條件 時效處瑾條件 時間/h \η VI 550t ' 450tx5 h(2 ^.) ΙΛ Ο 綱 ο IS ο 1/3 铋 m ε 6- 碡 ε w 喊 S 温度/TC Κ IT) e 卜 Ο 对 ο S ο s ο Ο 結A軚之大 小/jtzm fS 00 SO s Ον 2 9\ 〇\ 2 团溶化處理 a 度/t: ο ip 1050 话 00 ο (Λ 00 Ο S s 00 Ο Μ s 00 ο Μ 瞄 -6- 合金绂成 1? 1 Μ \〇 〇 ο o in o ο ζ ο ο Ο ο i 2 话 ri 〇 泛 ri 菝 孩 ri 茨 Γ4 s ri Ο ν> ri 话 2.50 比較例1 1比較例2 | 1比較例3 1 1比較例4 |比較例5 | [«;較例δ| 1比較《17 1比較例8 1 1比較《 9 1 1比較例1〇| 比較例11 200949860 ο ο 評價 彎曲加工性 B.W (MBR/t) IS fs «Λ ΙΛ v> GW (MBR/t) <s IS 对 導電率 (%IACS) fj in o oo m se 0.2%$ 全限應力 (MPa) s 卜 IS 00 00 卜 0Θ 卜 S 卜 抗拉強度 (MPa) QO 00 in s 00 00 s 00 «S 00 00 析出物 小粒子 個數密 度 2xlOA8 3χ10Λ8 3χ10Λ8 2χ10Λ8 3χ10Λ8 3xlOA8 3χ10Λ8 小粒子/ 大粒子 之數量 比 10Λ4 10Λ4 10Λ4 10A4 10Λ4 10Λ4 10Λ4 大粒子/ 小粒子之 尺寸比 rj V) 297.8 00 «Λ 328.4 463.3 343.7 屮百 * e , 〇〇1 7势 ο 2 ο 大粒子 徑(nm) 2459 Os 6253 V) 4598 7412 6874 製造條件 時效條件 時間/h V) 1/) If) m ifi rl IT) ri a 度/ic o 5 o V) i o 孩 o 1/) l〇 V) ΙΟ 5¾ 結晶粒 之大小/ (im rj e ϋ ^ Wip 姨W $ 面_ Μ o 00 o 00 e s o 00 o s o s ο S 合金組成 笫二添加无素/wt% Mg : 0.8-Cr : 0.8 Sn · 0.8~Zn · 0*8 Fe : 0.6-P : 0.5 Ti : 2.0 o s o iq e Cr : 1.0-Zr A1 : 0.3-Zr : Ti: 0.1-Zr : 第_添加因 素/wt% s o 7i 〇 in o O Sn o z o o 2 s ci s r4 话 <s o in ri S 1比較例12| 1比較例13| 1比較例14| 1比較例15| 比較例16 I比較例17| 1比較例18 200949860 表1及表3中記栽之與本發明之實施例相當之銅合 金,可知其良好地保持了強度、導電率及彎曲加工性之平 衡。 比較例1中’因Si脫離了組成之範圍,故Ni/Si亦變 為不適當之比,而因粗大之結晶物而於熱壓延中產生斷裂。 比較例2中,因Ni脫離了組成之範圍,故Ni成為過 剩狀態。因此,熱加工性劣化,而於熱壓延中產生斷裂。 比較例3中,因固溶化溫度較低,故有粗大之粒子殘 留。其結果,導電率雖變高,但小粒子之個數密度減少, ❾ 因此強度變低《又,於彎曲時,以粗大之粒子作為起點而 產生斷裂。 比較例4中,因固溶化溫度較高,故結晶粒徑變大, 大粒子減少’而另一方面小粒子之數量增加。因此,強度 雖變高,但導電率下降。固溶化時之結晶粒較大,因此於 弯曲時’藉由粒界破壞而使彎曲性劣化。 比較例5相當於專利文獻1中揭示之銅合金。因進行 了二次時效處理,故於第二次時效處理中析出之小粒子之 〇 大小較小’且個數密度顯著減小。大粒子與小粒子之比雖 適當’但因小粒子之個數密度過低,故強度變低。 比較例6中,因時效處理溫度較高,故粗大之析出物 增加。其結果,小粒子之密度減少,強度下降。又,導電 率雖被認為變高,但因時效處理溫度較高,故由導電率亦 會藉由再固溶現象而下降。彎曲係以粗大之粒子為起點而 產生斷裂。 26 200949860 比較例7中,因時效處 ; ^ ^ 埋時間過長,故小粒子之大小 變大,小粒子之個數密度亦隨 通之變小,強度下降。 比較例8中,因時效處 強度下降。 理時間過短’故未析出粒子’ J 比較例9中,因時效慮 早鱼,h 處時間過長’故無法區分大粒 較低。 幾乎4失’因此導電率較高,但強度 ❹強度較^例Μ中’因時效處理時間過短,故未析出粒子, ^較例U相當於專利文獻2巾揭示 間之冷壓延,故大粒子之數量減少,導電率下降。 之二::12中,因Mg之添加量過多,故Mg0等之粗大 之夾雜物増加,蠻曲枓少 物而變高。㈣以化。然而,強度因Cr及Si之析出 比較例13中,耐熱剝離 ❹加量較多,故導電率下降。 ,但因添 比較例14令,因ρ之添加量較多, 加,彎曲蛙少a 入<夾雜物增 夫化。再者,強度因Fe析出而變高。 I:: 15中,因Τί之添加量較多,故導電率顯著下降》 116中,因Zr之添加量較多,故由z 夹雜物增加1曲性劣化。 所產生之 比較例1 7 tf» 此,產生了電二’析出了大量一之粗大析出物。因 €錢時之缺陷(突起物)。 比較例18 Φ 丄 18中,由於Cu-Zr、Cu-Ti之粗大析出物(央雜 27 200949860 物)而於電鍍時產生了大量之缺陷(突起物)。 【圖式簡單說明】 無 【主要元件符號說明】 無 28Evaluation of bending workability BW (MBR/t) fS fS rj — — IS GW (MBR/t) is <s η •s «Μ Conductivity (%UCS) QO >η 9 5 0.2% Safety limit stress (MPa ) 00 os 00 S 00 00 ss 00 suspicion "2 4 % VO s 00 00 So g 00 00 s s s precipitate small particle number density (number / mm2 > 2xlOA8 3 χ 10 Λ 8 4 χ 10 Λ 8 3 χ 10 Λ 8 3 χ 10 Λ 8 3 χ 10 Λ 8 3xlOA8 small particles / large particles The number of Dong ratio 10A4 10Λ4 10Λ4 10A4 10Λ4 10Λ4 10A4 Large particle / small particle size ratio in o 1 ο js V) 00 — Small particle diameter (um) 2 ο 2 — 2 s 2 屮t 4 S < «1 — 5 ν〇V) — 00 1"N IQ — Manufacturing condition aging condition time /hm νϊ ΙΛ Vi «η a degree /ic tn ιη !ϊ V) 1/) Wear in Wear If) The size of the base granule / Fim — S ο 00 rj 2 Solution treatment rate / to S ο ose eose 00 s 00 Alloy grade into second additive element / Wt% oe Mg : 0.1-Cr : 0.1 Sn : 0.3-Zn : 0.3 fS eas Cr : 0.1«C〇: 0_1 Fe : 0.1-P : 0.03 笫 Adding element jt/wt% 〇ΙΛ es CD in o V) ό oe 2 ri 5 r4 ri s ri e V) S rl |Example 22| 1 Example 23| 1 Example 24| |Pour 2S|1 Capital Example 26 1 Capital Example 27| |Example 28 200949860 [ε<] Compensatory bending workability BW (MBR /t) Due to the breakage in the hot court, it is impossible to investigate because of the break in the hot press, so it is impossible to investigate ve ο 0Θ ο 00 00 ο V6 GW (MBR/t) VI vs μ Φ (4) — Guide rate (%IACS) 5! oe 5 3 This guide se 0.2%$ Full WL stress (MPa) 00 \n V) S3 〇s S 00 QO This ο 卜 IT) Μ Μ Tensile strength (MPa) 00 ΙΛ «Λ 00 00 s 00 3 Ο VC If) 00 precipitates small particle number density (pieces / mm2) 2χ10Λ4 3χ10Λ10 5χ10Λ2 4χ10Λ4 1χ10Λ5 1 1 1 2χ10Λ8 Small particles / large rough number ratio 10Λ2 10A7 10Λ3 10Λ2 10Λ3 1 1 10Λ7 Large Particle / small rough size ratio 203.3 〇 \ 5 00 00 1 ο 1 ιη 小耝子 "(rnn) 00 1/) (4) S 1 00 ΡΠ 1 Large particle range (nm) 5754 W) 3578 • Λ 1 00 1 f"N Manufacturing condition aging condition 瑾condition time /h \η VI 550t ' 450tx5 h(2 ^.) ΙΛ Ο ο ο IS ο 1/3 铋m ε 6- 碡ε w Shout S temperature / TC IT) e Ο Ο S S S ο 大小 大小 / / / / j 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 00 Ο Μ s 00 ο Μ -6-6- alloy 绂成1? 1 Μ \〇〇ο o in o ο ζ ο ο Ο ο i 2 ri 〇 〇 ri ri 菝 ri ri Γ Γ 4 s ri Ο ν> ri 2.50 Comparative Example 1 1 Comparative Example 2 | 1 Comparative Example 3 1 1 Comparative Example 4 | Comparative Example 5 | [«; Comparative Example δ| 1 Comparison "17 1 Comparative Example 8 1 1 Comparison "9 1 1 Comparative Example 1〇| Comparative Example 11 200949860 ο ο Evaluation of bending workability BW (MBR/t) IS fs «Λ ΙΛ v> GW (MBR/t) <s IS versus conductivity (%IACS) fj in o oo m se 0.2%$ Limiting stress (MPa) s BU IS 00 00 Bu 0Θ Bu S Bu tensile strength (MPa) QO 00 in s 00 00 s 00 «S 00 00 Precipitate small particle number density 2xlOA8 3χ10Λ8 3χ10Λ8 2χ10Λ8 3χ10Λ8 3xlOA8 3χ10Λ8 Small particles/ The number of large particles is 10Λ4 10Λ4 10Λ4 10A4 10Λ4 10Λ4 10Λ4 Large particle/small particle size ratio rj V) 297.8 00 «Λ 328.4 463.3 343.7 屮百* e , 〇〇1 7 ο 2 ο Particle diameter (nm) 2459 Os 6253 V) 4598 7412 6874 Manufacturing condition aging condition time / h V) 1/) If) m ifi rl IT) ri a degree /ic o 5 o V) io Child o 1/) l〇 V) ΙΟ 53⁄4 size of crystal grain / (im rj e ϋ ^ Wip 姨 W $ face _ Μ o 00 o 00 eso 00 osos ο S alloy composition 添加 two added element / wt% Mg : 0.8-Cr : 0.8 Sn · 0.8~Zn · 0*8 Fe : 0.6-P : 0.5 Ti : 2.0 oso iq e Cr : 1.0-Zr A1 : 0.3-Zr : Ti: 0.1-Zr : _additive factor / wt% so 7i 〇in o O Sn ozoo 2 s ci s r4 words <so in ri S 1 Comparative Example 12| 1 Comparative Example 13| 1 Comparative Example 14| 1 Comparative Example 15| Comparative Example 16 I Comparative Example 17| 1 Comparative Example 18 200949860 Table 1 The copper alloy corresponding to the examples of the present invention recorded in Table 3 shows that the balance of strength, electrical conductivity and bending workability is well maintained. In Comparative Example 1, since Si was deviated from the range of composition, Ni/Si also became an inappropriate ratio, and cracks occurred in hot rolling due to coarse crystals. In Comparative Example 2, since Ni was deviated from the composition range, Ni became an excessive state. Therefore, hot workability is deteriorated, and breakage occurs in hot rolling. In Comparative Example 3, since the solid solution temperature was low, coarse particles remained. As a result, although the electrical conductivity is high, the number density of small particles is reduced, and the strength is lowered. "In addition, when bending, coarse particles are used as a starting point to cause fracture. In Comparative Example 4, since the solid solution temperature was high, the crystal grain size became large, and the large particles decreased, while the number of small particles increased. Therefore, although the strength is high, the electrical conductivity is lowered. Since the crystal grains at the time of solid solution are large, the bending property is deteriorated by the grain boundary breakage at the time of bending. Comparative Example 5 corresponds to the copper alloy disclosed in Patent Document 1. Since the secondary aging treatment was performed, the size of the small particles precipitated in the second aging treatment was small, and the number density was remarkably reduced. Although the ratio of large particles to small particles is appropriate 'but the intensity of the small particles is too low, the strength is low. In Comparative Example 6, since the aging treatment temperature was high, coarse precipitates increased. As a result, the density of small particles decreases and the strength decreases. Further, although the electrical conductivity is considered to be high, since the aging treatment temperature is high, the electrical conductivity is also lowered by the re-solidification phenomenon. The bending system breaks with coarse particles as a starting point. 26 200949860 In Comparative Example 7, due to the aging; ^ ^ The burial time is too long, so the size of the small particles becomes larger, and the number density of the small particles becomes smaller as the pass becomes smaller, and the strength decreases. In Comparative Example 8, the strength at the time of aging was lowered. The reason is too short, so the particles are not precipitated. J In Comparative Example 9, the early fish was too long due to the aging effect, so that it was impossible to distinguish the large particles from being low. Almost 4 losses', so the conductivity is higher, but the strength ❹ intensity is better than the case ' 'Because the aging treatment time is too short, so no particles are precipitated. ^Comparative Example U is equivalent to the cold rolling between the disclosures of Patent Document 2, so it is large. The number of particles decreases and the conductivity decreases. In the second::12, because of the excessive amount of Mg added, the coarse inclusions such as Mg0 increase, and the volume is too high. (4) to use. However, the strength was precipitated by Cr and Si. In Comparative Example 13, the amount of heat-resistant peeling was increased, so that the electrical conductivity was lowered. However, due to the addition of the comparative example 14, the amount of addition of ρ is large, and the amount of curved frog is less, and the inclusion is increased. Furthermore, the strength is increased due to the precipitation of Fe. In I::15, since the amount of addition of Τί is large, the conductivity is remarkably lowered. In 116, since Zr is added in a large amount, the z-inclusion is increased by one curvature. The resulting Comparative Example 1 7 tf» This produced a large amount of coarse precipitates. Defects due to the money (protrusions). Comparative Example 18 In Φ 丄 18, a large number of defects (protrusions) were generated during electroplating due to coarse precipitates of Cu-Zr and Cu-Ti (No. 27 200949860). [Simple description of the diagram] None [Key component symbol description] None 28

Claims (1)

200949860 : 七、申請專利範圍: : K一種電子材料用鋼合金,其係含有Ni :〇.4〜6.0質量 %、Si·’ 0.1〜2.0質量%’且剩餘部分由Cu及不可避免之雜 質所構成; , 其存在粒徑為°·01 以上且未達0·05 /zm之Ni-Si ,化合物小粒子、及粒徑為0.05私^上且未達5.0 ^之 化合物大粒子;小粒子之個數密度為ι〇ό〜1〇1〇個 /mm大粒子之個數密度為該小粒子之個數密度之l/ioooo 〇 〜1/1〇 〇 2·如申請專利範圍第丨項之電子材料用銅合金,其中大 粒子之平均粒徑相對於小粒子之平均粒徑之比為2〜1〇〇。 3.如申請專利範圍帛丄項或第2項之電子材料用銅合 金,其中從與壓延方向平行之厚度方向之剖面進行觀察 時,平均結晶粒徑以對應圓直徑表示為5〜3〇以爪。 4· 一種電子材料用銅合金,其係含有Ni:〇4〜6〇質量 %、Sl: 0·1〜2.〇質量%,進-步含有合計最大為!·〇質量% 之選自 Cr、Co、Mg、Mn、Fe、Sn、Zn、A1 及 P 中之 i 種 或2種以上,且剩餘部分由Cu及不可避免之雜質所構成; 其存在粒徑為0.01 以上且未達0.05 Mni2Ni Si 化合物小粒子、及粒徑為0.05 //m以上且未達5 〇从瓜之 Nl-Sl化合物大粒子;小粒子之個數密度為1〇6〜1〇ιο個 /mm2,大粒子之個數密度為該小粒子之個數密度之 〜1/10 。 5·如申請專利範圍第4項之電子材料用銅合金其中大 29 200949860 粒子之平均粒徑相對於小粒子之平均粒徑之比為2〜1 00。 6. 如申請專利範圍第4項或第5項之電子材料用銅合 金,其中從與壓延方向平行之厚度方向之剖面進行觀察 時,平均結晶粒徑以對應圓直徑表示為5〜30 /z m。 7. —種伸銅品,係由申請專利範圍第1〜6項中任一項 之銅合金所構成者。 8. —種電子零件,其具備申請專利範圍第1〜6項中任 一項之銅合金。 八、圖式· 無 30200949860 : VII. Patent application scope: : K A steel alloy for electronic materials, which contains Ni: 〇.4~6.0% by mass, Si·' 0.1~2.0% by mass' and the remainder is composed of Cu and unavoidable impurities. Composition;; there are Ni-Si having a particle size of more than °·01 and not reaching 0·05 /zm, small particles of a compound, and large particles of a compound having a particle diameter of 0.05 and less than 5.0 ^; small particles The number density is ι〇ό~1〇1〇/mm The number density of the large particles is the number density of the small particles l/ioooo 〇~1/1〇〇2·as in the scope of the patent application A copper alloy for an electronic material, wherein a ratio of an average particle diameter of the large particles to an average particle diameter of the small particles is 2 to 1 Å. 3. The copper alloy for electronic materials according to the scope of the application or the second item, wherein the average crystal grain size is represented by a corresponding circle diameter of 5 to 3 Å when viewed from a cross section in the thickness direction parallel to the rolling direction. claw. 4. A copper alloy for electronic materials, which contains Ni: 〇4~6〇% by mass, Sl: 0·1~2.〇% by mass, and the total amount of the step-by-step is the largest! 〇% by mass of one or more selected from the group consisting of Cr, Co, Mg, Mn, Fe, Sn, Zn, A1 and P, and the remainder consisting of Cu and unavoidable impurities; Small particles of 0.01 or more and less than 0.05 Mni2Ni Si compound, and large particles of Nl-Sl compound having a particle diameter of 0.05 // m or more and less than 5 〇 from the melon; the number density of small particles is 1〇6~1〇 Ιο/mm2, the number density of large particles is ~1/10 of the number density of the small particles. 5. The copper alloy for electronic materials according to item 4 of the patent application is large. 29 200949860 The ratio of the average particle diameter of the particles to the average particle diameter of the small particles is 2 to 100. 6. For the copper alloy for electronic materials according to item 4 or 5 of the patent application, wherein the average crystal grain size is 5 to 30 /zm in terms of the diameter of the corresponding circle when viewed from the cross section in the thickness direction parallel to the rolling direction. . 7. A type of copper alloy which is composed of a copper alloy according to any one of claims 1 to 6. 8. An electronic component comprising the copper alloy according to any one of claims 1 to 6. Eight, schema · None 30
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