TW200927993A - Copper foil including resistive film layer - Google Patents

Copper foil including resistive film layer Download PDF

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Publication number
TW200927993A
TW200927993A TW097143314A TW97143314A TW200927993A TW 200927993 A TW200927993 A TW 200927993A TW 097143314 A TW097143314 A TW 097143314A TW 97143314 A TW97143314 A TW 97143314A TW 200927993 A TW200927993 A TW 200927993A
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Taiwan
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copper
layer
copper foil
zinc
film layer
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TW097143314A
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Chinese (zh)
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TWI443226B (en
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Masaru Sakamoto
Toshio Kurosawa
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Nippon Mining Co
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/58Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0361Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

Copper foil including an electric resistive film layer characterized in that a copper-zinc alloy layer containing 1000 [mu]g/dm2 to 9000 [mu]g/dm2 of zinc per unit area is provided on a roughened surface or a glossy surface of the copper foil, a stabilized layer with a thickness between 5 AA and 100 AA made of at least one component selected from among zinc oxide, chromium oxide, and nickel oxide is formed on the copper-zinc alloy layer, and a film layer made of an electric resistive material is provided on the stabilized layer. The additional formation of the electric resistive film layer in the copper foil enables a resistor to be embedded in a substrate, and the copper foil includes the resistive film layer with improved adhesiveness.

Description

200927993 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種膜之密合性優異,且剝離強度高之 具備電阻膜層之鋼猪。 【先前技術】 作為印刷電路基板之配線材料,一般而言使用銅箔。 該銅4根據其製造法而分為電解鋼箔與壓延銅箔。該銅箔 © 之厚度範圍可自為5 μπι之非常薄之銅箔至14〇 μπι左右之 厚銅箔為止進行任意調整。 此等銅箔接合於由環氧樹脂或聚醯亞胺樹脂等之樹脂 所構成之基板上,來用作印刷電路用基板。銅箔中要求充 欠確保與作為基板之樹脂之接著強度,因此’電解銅箔一 身又疋利用於製時所形成之所謂消光面surface)之粗 面’並進一步於其上實施表面粗化處理而使用。又,壓延 銅箔亦同樣地於其表面上實施粗化處理而使用。 © 最近’提出了於作為配線材料之銅箔上,進一步形成 由電阻材料所構成之薄膜層(參照專利文獻1、2 )。於電 子電路基板中電阻元件雖不可缺少,但若使用具備電阻層 之銅落’則只要在形成於銅箔上之電阻膜層上,使用氣化 銅(Π )等之蝕刻溶液’將電阻元件外露即可。 因此,相較先前僅有之以焊接法將晶片電阻元件加以 表面封裝於基板上之方法,可藉由電阻之基板内置化,而 有效利用有限之基板之表面積。 200927993 又’於多層基板内部形成電阻元件使得設計上之限制 變少’從而可縮短電路長度,藉此亦可謀求電氣特性之改 善。因此,若使用具備電阻層之銅箔,則可使焊接變得不 需要或者大幅省略,從而可謀求提高輕量化.可靠性。如 上所述’内置有電阻膜之基板具有許多優點。 此等電阻材料中所使用之作為基底之銅箔,係於在其 上進一步形成電阻層之前提下實施表面處理,因此雖通常 與一般之印刷基板配線所用之銅猪不同,但藉由粗化來確 〇 保與樹脂之接著強度方面則為相同。 於評價電阻材料之接著強度之情形時,必須研究銅箔 與電阻膜間之強度以及電阻膜與樹脂間之強度此兩者,於 拉伸試驗等中自該兩者中之強度較弱者之界面會產生剝 離*於任一情形時均為表面粗糙度越大其接著強度越高。 接著強度一般認為係受到表面粗糙度與除此之外之表面化 予種類(元素種類)等之要素的影響。 另方面,因作為持續高性能化之印刷電路基板所要 求之更微小電阻電路之形成或者高頻特性改善之要求,而 要求抑制電阻材料之表面粗糖度。為了將其加以實現,提 高不依賴表面粗糙度之接著強度之方法變得不可或缺。 專利文獻1 :日本專利第331 1338號公報 專利文獻2 :曰本專利第3452557號公報 【發明内容】 發明所欲解決之Μ _gs 6 ❹ ❹ 200927993 本發明提供一種具備電阻膜層 上進一步形成電阻膜層,而 ’,係藉由於銅箔 只祝電阻> 使其之接著性提高。 <基板内置化,且 解決問題之枯術手p· 本發明者等人為了解決上述問題 _ 結果獲得以下見解:於銅箔與電阻 進行了努力研究, 力之層為有效。 層之間形成提高接著 根據上述見解,本發明提供 Ο —種具備電阻膜層之銅箔,誃 ^ 7L· ,ξ· 電阻膜層係於銅箔之 _ \ 單位面積之鋅含量為刚〇〜 選自氧1銅鋅合金層,於該鋼·鋅合金層上形成有由 =二?鉻、氧化錦中之至少-種成分所構成且 具有5 Α〜100 Α之間的厚度之稃定 目I山麻 穗疋化層,於該穩定化層上 具備由電阻材料所構成之膜層。 於將具備電阻膜層之銅猪用作電路基板用之膜之情形 時,可認為若於銅箱上形成由選自氧化辞、氧化絡氧化 鎳之中的至少一種成分所構成之穩定化層,且進一步於其 上形成電阻層,即可獲得與銅箔之充分之接著強度。然而, 於作為基底之銅笛中使用粗化程度經降低之粗糙度小的銅 箔之情形時,則有時會產生接著力不充分之問題。 本發明者等人發現,為了改善此情況,有效的是於形 成上述穩定化層之前,形成每一單位面積之鋅含量為1〇〇〇 〜9000 pg/dm2之銅·辞合金層。銅箔以及銅_辞合金層與穩 7 200927993 定化層之間’繼而與電阻膜層之接著力之改善,可利用剝 離強度進行評價。 視需要,於實施如下表面處理的銅箔之面上,形成每 單位面積之鋅含量為1〇〇〇〜9000 pg/dm2之銅-辞合金 層其步驟為用以使接著強度提高之重要步驟。每一單位 面積之鋅含量未滿丨〇〇〇 μβ/(1ιη2之銅_鋅合金層中接著強 度不會提高。又,每一單位面積之辞含量超過9〇〇〇 ^/dm2[Technical Field] The present invention relates to a steel pig having a resistive film layer which is excellent in adhesion of a film and has high peeling strength. [Prior Art] As a wiring material of a printed circuit board, a copper foil is generally used. This copper 4 is classified into an electrolytic steel foil and a rolled copper foil according to the manufacturing method. The thickness of the copper foil © can be adjusted from a very thin copper foil of 5 μm to a thick copper foil of about 14 μm. These copper foils are bonded to a substrate made of a resin such as an epoxy resin or a polyimide resin to be used as a substrate for a printed circuit. In the copper foil, it is required to ensure the adhesion strength with the resin as the substrate, so that the 'electrolytic copper foil is used for the rough surface of the so-called matte surface formed at the time of manufacture' and further roughening the surface thereon. And use. Further, the rolled copper foil is similarly applied to the surface thereof by a roughening treatment. © Recently, a thin film layer composed of a resistive material has been further formed on a copper foil as a wiring material (see Patent Documents 1 and 2). Although the resistive element is indispensable in the electronic circuit board, if a copper drop having a resistive layer is used, the resistive element such as vaporized copper (Π) is used on the resistive film layer formed on the copper foil. Exposed. Therefore, compared with the prior art method of surface-mounting the chip resistor element on the substrate by soldering, the surface area of the substrate can be effectively utilized by the built-in substrate of the resistor. 200927993 In addition, the formation of a resistor element inside the multilayer substrate reduces the design restrictions, thereby shortening the circuit length, thereby improving the electrical characteristics. Therefore, when a copper foil having a resistance layer is used, soldering can be prevented or largely omitted, and the weight and reliability can be improved. As described above, a substrate having a resistive film built therein has many advantages. The copper foil used as the base material in these resistive materials is subjected to surface treatment before the resistive layer is further formed thereon. Therefore, although it is generally different from the copper pig used for general printed circuit board wiring, it is roughened by It is the same as that of the resin. In the case of evaluating the adhesion strength of the resistive material, it is necessary to study the strength between the copper foil and the resistive film and the strength between the resistive film and the resin, and the interface between the two of them is weak in the tensile test or the like. Peeling will occur. * In either case, the greater the surface roughness, the higher the subsequent strength. Then, the strength is generally considered to be affected by the surface roughness and other factors such as the surface type (element type). On the other hand, it is required to suppress the surface roughness of the resistive material because of the formation of a smaller resistance circuit or the improvement of high-frequency characteristics required for a continuously high-performance printed circuit board. In order to achieve this, a method of increasing the strength of the joint which does not depend on the surface roughness becomes indispensable. Patent Document 1: Japanese Patent No. 331 1338 Patent Document 2: Japanese Patent No. 3452557 SUMMARY OF INVENTION Technical Problem 发明 _gs 6 ❹ ❹ 200927993 The present invention provides a resistive film further formed on a resistive film layer The layer, and ', is due to the fact that the copper foil only wishes to have a resistance> to improve its adhesion. In order to solve the above problems, the inventors of the present invention have obtained the following findings: efforts have been made to study copper foil and electric resistance, and the force layer is effective. According to the above findings, the present invention provides a copper foil having a resistive film layer, 誃^7L·, and a resistive film layer in the copper foil. The zinc content per unit area is just 〇~ It is selected from the oxygen 1 copper-zinc alloy layer, and is formed on the steel/zinc alloy layer by =2? a layer of at least one of chromium and oxidized bromine and having a thickness of between 5 Å and 100 Å, and a layer composed of a resistive material on the stabilizing layer . When a copper pig having a resistive film layer is used as a film for a circuit board, it is considered that a stabilizing layer composed of at least one selected from the group consisting of oxidized and oxidized nickel oxide is formed on the copper case. Further, a resistive layer is formed thereon to obtain a sufficient bonding strength with the copper foil. However, in the case where a copper foil having a reduced roughness is used in the copper flute which is the base, there is a problem that the adhesion is insufficient. The present inventors have found that in order to improve this, it is effective to form a copper alloy layer having a zinc content per unit area of from 1 9000 to 9000 pg/dm 2 before the formation of the above-mentioned stabilizing layer. The improvement of the adhesion between the copper foil and the copper alloy layer and the stable layer and then the resistive layer can be evaluated by the peel strength. If necessary, on the surface of the copper foil subjected to the following surface treatment, a copper-alloy layer having a zinc content of 1 〇〇〇 to 9000 pg/dm 2 per unit area is formed, which is an important step for improving the adhesion strength. . The zinc content per unit area is less than 丨〇〇〇 μβ/(1ιη2 of copper_zinc alloy layer does not increase in strength. Moreover, the content per unit area exceeds 9〇〇〇 ^/dm2

G 之銅-鋅合金層中,耐化學性(蝕刻液之腐蝕)較差故欠佳。 其原因在於含有大量之鋅會導致產生耐蝕性降低之問題。 該銅-鋅合金層可藉由電鍍而形成。電鍍中之銅-鋅合金 之鋅含量為任意。艮p,該銅-辞合金層包括電鍛後辞向銅箔 擴散之層。銅-辞合金層中每一單位面積之辞含量為ι〇〇〇〜 9_ 即可。其結果’銅_辞合金層之厚度大致相當於 100〜1200 Α之範圍。 如此所形成之銅-辞合金層上,形成由選自氧化辞、氧 化鉻、氧化鎳之中的至少一種成分所構成之具有5 a〜i〇〇 A之間的厚度之穩定化層。 如上所述,該穩定化層雖其效果存在限度,但亦具備 使與銅箔之密合性提高之效果。 氧化鋅、氧化鉻、氧化鎳作為穩定化層均為有效且 其等亦可複合使用。該敎化層具有防止㈣氧化腐勉, 且防止銅引起的介電體基材分解,並維持穩定之制離強度 之功能。繼而,通常該穩定化層為5 A〜 _ υ A之間之厚度, 300 A 之 然而亦可視需要設為1〇〇A以上之厚度,即200〜 8 200927993 著其力V:未滿5 A,則無法發揮作為穩定化層之作用 丑接者力亦降低故欠佳。 W 1乍用, 根據電===:::,:成::=,联層係 之…:且=: ^ 70件之材料之例,例如可列舉飢、鎢、 錄銷、组、鎳、鉻等材料。如上 针如上所述之電阻相對較高之 ❹ 而=可^作為單獨之膜或者料與其他元素之合金膜 又,即便為銘、石夕、銅、鐵、銦、録、战# > + _ ^ 卿蛘、錫等之電阻相 低之材料,只要藉由將其與其他元素合金化而成為電 阻變高之材料’亦當然能夠進行使用。 例如NiCr合金、NiCrA1Si合金等之電阻元件係受到矚 目之材料。X,亦可使用選自上述元素之氧化物、氮化物、 矽化物之群中之材料氧化物、氮化物、矽化物。如上所述, 此等材料之選擇係根據電路設計而任意選擇者,故應玎被 理解為並不限於此等材料。 當形成該電阻膜層時,可使用濺鍍法、真空蒸艘法、 離子束電鍍法等之物理性表面處理方法、及熱解法、氣相 反應法等之化學性表面處理法或者電鍍法、無電鑛法等之 濕式表面處理法來形成。 一般而言’電鍍法具備能夠以低成本進行製造之優 點。又’濺鍍法由於膜之厚度均勻且具有等向性,故存在 可獲得高品質之電阻元件之優點。 9 200927993 該電阻膜層係根據膜之用途而形成者,故此時之附著 方法或者鍍敷方法,可說較佳為根據上述電阻膜層之性質 進行適當選擇。 本發明之具備電阻膜層之銅箔係 2)可使用箔厚為5〜70 μιη之銅箔,尤佳為5〜35 μιη 之銅箔。該銅箔之厚度可根據用途而任意選擇,但亦存在 因製造條件而受到限制,故於上述範圍内進行製造較為有 效。 ^ 3)進而,本發明提供一種於電解銅箔之消光面(粗面) 或者壓延銅箔經粗化處理之面上形成有電阻層之銅箔。 電解銅落之消光面上亦可進一步進行附著結塊狀粒子 之粗化處理。又,亦可視需要對壓延銅落進行粗化處理。 藉由上述粗化處理,可獲得Rz為〇·3〜10.0 μϊη之低分布銅 箱或者標準分布銅箔等之粗化面。 發明效果 化藉由使用本發明之内置有電阻膜層之鋼箔,而於電路 叹叶時’纟需重新單獨形成電阻元件,只要在形成於銅落 上之電阻膜層上,使用氣化銅(η)等之㈣溶液,使電阻元 件外露即可,因此具有可使焊接變得不需要或者大幅省 略,從而顯著簡化了封裝步驟之效果。 又’減少封裝零件或焊料數量,結果亦有可擴張空間 到^型輕量之優點。藉此可使電路設計之自由度提高。 又,藉由如上所述地於銅箔中内置電阻體,而具備改善高 10 200927993 頻區域中之信號特性之效果。 進而’本發明具有如下優異之效果:可使此種内置有 電阻膜層之銅箔中所伴有的缺點即接著力降低得以改善, 故具備良好之耐熱性以及耐酸性。 【實施方式】 圖1表示電解銅箔之製造裝置之概要。該裝置係於收 納電解液之電解槽中設置有陰極筒。該陰極筒1可於局部 (大致下半部分)浸潰於電解液中之狀態下進行旋轉。 以包圍該陰極筒1之外周下半部分之方式設有不溶性 陽極(陽極)2。該陰極筒丨與陽極2之間存在固定之間隙 3,電解液可流動於其間。該裝置中配置有2片陽極板。 該裝置中,係如以下方式構成:自下方供給電解液, 該電解液穿過陰極筒!與陽極2之間隙3,而自陽極2之上 緣溢流,進而該電解液進行循環。於陰極筒丨與陽極2之 ❹間可經由整流器,而於兩者之間維持特定之電壓。 1¾著陰極筒1之旋轉,自電解液中進行錢之銅的厚 度會增大,於達至某種厚度以上後,將該生羯4剝離,連 續地捲繞。如此製造之生箱可藉由陰極筒1與陽極2之間 之距離、所供給之電解液之流速、或者所供給之電量來調 整厚度。 藉由此種銅镇製造裝置而製造之銅荡中,與陰極筒接 觸之面為鏡面(光澤面)’而相反侧之面為則為存在凸凹 之粗面(消光面)。該電解銅落之厚度可任意選擇。通常 200927993In the copper-zinc alloy layer of G, the chemical resistance (corrosion of the etching solution) is poor, which is not preferable. The reason for this is that the presence of a large amount of zinc causes a problem of a decrease in corrosion resistance. The copper-zinc alloy layer can be formed by electroplating. The zinc content of the copper-zinc alloy in the plating is arbitrary.艮p, the copper-alloy layer includes a layer that is electrically forged and then diffused into the copper foil. The content of each unit area in the copper-internal alloy layer is ι〇〇〇~9_. As a result, the thickness of the copper alloy layer is approximately equivalent to the range of 100 to 1200 Å. On the copper-alloy layer thus formed, a stabilizing layer having a thickness of 5 a to i 〇〇 A, which is composed of at least one selected from the group consisting of oxidized, chromium oxide, and nickel oxide, is formed. As described above, although the stabilizing layer has a limit in effect, it also has an effect of improving the adhesion to the copper foil. Zinc oxide, chromium oxide, and nickel oxide are effective as a stabilizing layer, and the like can also be used in combination. The deuterated layer has a function of preventing (four) oxidative rot and preventing decomposition of the dielectric substrate caused by copper and maintaining stable separation strength. Then, usually, the stabilizing layer is between 5 A and _ υ A, and 300 A can be set to a thickness of 1 〇〇A or more as needed, that is, 200 to 8 200927993. Its force V: less than 5 A , it is impossible to play the role of the stabilizing layer, and the ugly power is also reduced. W 1 ,, according to electricity ===:::,: into::=, the layered system...: and =: ^ 70 pieces of material examples, such as hunger, tungsten, record, group, nickel , chrome and other materials. The above-mentioned needle has a relatively high resistance as described above, and can be used as a separate film or alloy film of other materials, even for Ming, Shi Xi, Tong, Tong, Zhan, Zhan, War # > _ ^ Materials with low resistance, such as 蛘, tin, etc., can be used as long as they are alloyed with other elements to become a material with high electrical resistance. For example, a resistive element such as a NiCr alloy or a NiCrA1Si alloy is a material which is attracting attention. X may also be a material oxide, a nitride or a telluride selected from the group consisting of oxides, nitrides, and tellurides of the above elements. As noted above, the choice of such materials is arbitrarily chosen in accordance with the circuit design and is therefore understood to be not limited to such materials. When the resistive film layer is formed, a physical surface treatment method such as a sputtering method, a vacuum vapor deposition method, or an ion beam plating method, or a chemical surface treatment method or an electroplating method such as a pyrolysis method or a gas phase reaction method may be used. It is formed by a wet surface treatment method such as electroless mining. In general, the electroplating method has the advantage of being able to be manufactured at low cost. Further, the sputtering method has the advantage that a high-quality resistive element can be obtained because the thickness of the film is uniform and isotropic. 9 200927993 The resistive film layer is formed according to the use of the film. Therefore, the adhesion method or the plating method at this time is preferably selected in accordance with the properties of the above-mentioned resistive film layer. The copper foil having the resistive film layer of the present invention 2) may be a copper foil having a foil thickness of 5 to 70 μm, particularly preferably a copper foil of 5 to 35 μm. The thickness of the copper foil can be arbitrarily selected depending on the use, but it is also limited by the production conditions, so that it is effective to manufacture in the above range. Further, the present invention provides a copper foil in which a resistive layer is formed on a matte side (rough side) of an electrolytic copper foil or a roughened surface of a rolled copper foil. Further, the roughening treatment of the attached agglomerated particles can be further performed on the matte surface of the electrolytic copper. Further, the rolled copper can be roughened as needed. By the above roughening treatment, a roughened surface of a low-distribution copper box or a standard distribution copper foil having an Rz of 〇·3 to 10.0 μϊη can be obtained. The effect of the invention is achieved by using the steel foil with the resistive film layer of the present invention, and it is not necessary to separately form the resistive element when the circuit is squirmed, as long as the vaporized copper is used on the resistive film layer formed on the copper drop. The (d) solution of (n) or the like allows the resistive element to be exposed, so that the soldering can be made unnecessary or largely omitted, thereby significantly simplifying the packaging step. In addition, the number of package parts or solder is reduced, and as a result, there is an advantage that the space can be expanded to a light weight. Thereby, the degree of freedom in circuit design can be improved. Further, by incorporating a resistor body into the copper foil as described above, it is effective to improve the signal characteristics in the high frequency region of 200927993. Further, the present invention has an excellent effect of improving the adhesion resistance, which is a disadvantage associated with the copper foil having the resistive film layer built therein, and thus has excellent heat resistance and acid resistance. [Embodiment] FIG. 1 shows an outline of an apparatus for manufacturing an electrolytic copper foil. The apparatus is provided with a cathode barrel in an electrolytic cell that receives the electrolyte. The cathode can 1 is rotated in a state where a part (substantially lower half) is immersed in the electrolytic solution. An insoluble anode (anode) 2 is provided so as to surround the lower half of the outer circumference of the cathode can 1 . There is a fixed gap 3 between the cathode barrel and the anode 2, and the electrolyte can flow therebetween. Two anode plates are arranged in the device. In this apparatus, it is configured as follows: an electrolyte is supplied from below, and the electrolyte passes through the cathode barrel! The gap 3 with the anode 2 overflows from the upper edge of the anode 2, and the electrolyte is circulated. A specific voltage can be maintained between the cathode barrel and the anode 2 via a rectifier. 13b, the rotation of the cathode can 1 is increased, and the thickness of the copper from the electrolyte is increased. After reaching a certain thickness or more, the green crucible 4 is peeled off and continuously wound. The green box thus manufactured can be adjusted in thickness by the distance between the cathode can 1 and the anode 2, the flow rate of the supplied electrolyte, or the amount of electricity supplied. In the copper swash produced by such a copper-making apparatus, the surface in contact with the cathode can is a mirror surface (glossy surface), and the surface on the opposite side is a rough surface (matte surface) in which convexities and concaves are present. The thickness of the electrolytic copper can be arbitrarily selected. Usually 200927993

可使用厚度為9 Km〜35 μιη之H 如此製造之銅箱其次經由去除表面氧化物皮膜之淨化 步驟’進而進行水之清洗步驟。淨化步驟中,通常使用ι〇 80 g/L之硫酸水溶液。 述說明中已對電解銅箔之製造進行了說明,然而對 :壓I銅4,可對經溶解及鑄造之鑄錠實施退火以及熱 軋,進而實施冷軋,來製造成所需厚度之銅帛。壓延銅箱 =為光澤面因此可視需要實施粗化處理。該粗化處理可 使用公知之粗化處理。It is possible to use a copper case thus manufactured having a thickness of 9 Km to 35 μm, followed by a purification step of removing the surface oxide film, and then a water washing step. In the purification step, an aqueous solution of sulfuric acid of 〇 80 g/L is usually used. In the above description, the production of the electrolytic copper foil has been described. However, for the pressure I copper 4, the dissolved and cast ingot can be annealed and hot rolled, and further cold rolled to produce copper of a desired thickness. silk. Calendered copper box = is a glossy surface so it can be roughened as needed. This roughening treatment can be carried out using a known roughening treatment.

❹ 舉粗化處理之一例如下所述。又,該粗化處理亦適用 於電解銅箔之光澤面以及消光面(粗面)。One of the roughening processes is as follows. Further, the roughening treatment is also applicable to the shiny side and the matte side (rough side) of the electrolytic copper foil.

Cu離子濃度:1〇〜3〇 g/L 硫酸濃度:20〜1〇〇 g/L 電解液温度:20〜60°C 電流密度:5〜80 A/dm2 處理時間:0.5〜30秒 對如此製造之電解銅箔或者壓延銅箔,進行鋅_銅合金 鍍敷處理。該鋅-銅合金鍍敷處理之槽組成與電鍍條件如下 所述。 (鋅·銅合金鍍敷槽組成與處理條件) 槽組成Cu ion concentration: 1〇~3〇g/L Sulfuric acid concentration: 20~1〇〇g/L Electrolyte temperature: 20~60°C Current density: 5~80 A/dm2 Processing time: 0.5~30 seconds The produced electrolytic copper foil or rolled copper foil is subjected to zinc-copper alloy plating treatment. The groove composition and plating conditions of the zinc-copper alloy plating treatment are as follows. (Zinc·copper alloy plating bath composition and processing conditions)

CuCN : 60〜120 g/L Zn(CN)2 : 1〜10 g/L Na〇H : 40〜1〇〇 g/L 12 200927993CuCN : 60~120 g/L Zn(CN) 2 : 1~10 g/L Na〇H : 40~1〇〇 g/L 12 200927993

Na(CN) : 10〜30 g/L pH 值:l〇〜13 槽溫:60〜80°C 電流密度:100〜l〇〇〇〇A/dm2 處理時間:21 ~1 6 0秒 藉此,可形成每一單位面積之鋅含量為1〇〇〇〜9〇〇〇 Pg/dm2之銅-鋅合金層。上述電鍍為較佳之辞_銅合金電鍍條 件。若可形成每一單位面積之辞含量為1〇〇〇〜9〇〇〇 ^g/dm2 © 之銅-鋅合金層,即可無需限於上述條件。 因此,可於銅上進行鍍鋅,繼而使其加熱擴散而形成 銅-鋅合金層。又,一般於加壓步驟中會產生熱,因而只要 形成鍍鋅,即可藉由加熱擴散而形成銅_鋅合金層,故可利 用上述步驟。下述表示較佳之鍍鋅之例。 (鍍辞槽組成與鍍敷條件) 槽組成Na(CN): 10~30 g/L pH: l〇~13 Slot temperature: 60~80°C Current density: 100~l〇〇〇〇A/dm2 Processing time: 21 ~ 1 60 seconds A copper-zinc alloy layer having a zinc content of 1 〇〇〇 to 9 〇〇〇 Pg/dm 2 per unit area can be formed. The above plating is a better term - copper alloy plating conditions. If a copper-zinc alloy layer having a content per unit area of 1 〇〇〇 to 9 〇〇〇 ^g/dm 2 © can be formed, it is not necessary to be limited to the above conditions. Therefore, galvanization can be performed on copper, followed by heating and diffusion to form a copper-zinc alloy layer. Further, since heat is generally generated in the pressurizing step, the copper-zinc alloy layer can be formed by heating and diffusion as long as galvanizing is formed, so that the above steps can be utilized. The following shows an example of a preferred galvanizing. (plating composition and plating conditions)

znS04.7H20 : 50〜350 g/L ❹ pH 值:2.5 〜4.5 槽溫:40〜60°C 電流密度:5〜40 A/m2 處理時間:1〜3 0秒 其次’於辞銅合金層上形成由選自氧化鋅、氧化鉻、 氧化鎳之中的至少一種成分所構成之具有5 A〜1〇〇 a之間 的厚度之穩定化層。 作為一實施形態,可使用含有鋅離子與鉻離子之電解 13 200927993 溶液來形成包覆層。作為電解溶液中之辞離子源,例如可 使用ZnS〇4、ZnC〇3、ZnCr〇4等。作為電解溶液中之絡離子 源,可使用6價鉻鹽或化合物、例如ZnCr〇4、。〇3等。 電解溶液中之鋅離子濃度可為〇卜2 g/L、㈣為Μ 〜〇.6g/L、更佳為0.4〜〇.5g/L之範圍。又電解溶液中之 鉻離子濃度可為0.3〜5g/L、較佳為〇5〜約3^、更佳為 ❹ Ο ^〜以^之。再者’此等條件僅為用以進行有效鐘 敷之條件’可視需要亦設置成上述條件之範圍外。 作為其他實施形態,為了形成上述穩定化層,而可包 覆氧化鎳與鎳金屬、或者氧化鋅或氧化鉻、或者-併包覆 2述物質。作為電解溶液之鎳離子源,可為_〇4、就〇3 寺之任一者,或者組合此等者。 錄離子於電解溶液中之濃度較佳為〇2g/L〜i 2g/L。 =可使用如美國專利5,9。8,544號中記載之如含鱗之穩 層。再者,此等條件僅為用以有效地形成由選自氧化 〜Η)ΓΓ路、氧化錄之中的至少—種成分所構成之具有5 a 上过检之間的厚度之穩定化層之條件,亦可視需要設置成 上述條件之範圍外。 為=解溶液中可以卜5〇 g/L、較佳為i〇〜2〇 W、更佳 加物8 g/L之範圍之激度含有如Na2S04般其他習知之添 〜$物、。理想的是使電解溶液之阳值一般為3〜6、較佳為4 更佳為4.8〜5.0為止之範圍。 、s電解合液之溫度$ 2()°C〜1〇i)<>C、較佳為25°C〜45 佳為26t〜44。(:者則較為合適。 200927993 圖〔。2係表示表面處理裝置之概要。圖2所載之符號如 2所述U .原料銅箔(生箔)、12 :銅箔、14 :光澤侧、2〇 : 刖處理步驟、22 :前處理槽、24 :下部導輥、26 :導輥、 3〇洗淨槽、32 :水洗嘴頭、34 :洗淨槽、40 :安定化步 驟、42:電槽、44:下部導輥、46:導輥(陰極輥)、t 陽極60.乾燥器62:加熱器、72:踐鑛裝置、%:乾、 77:氣體導管、100 :銅-鋅步驟。 ❺znS04.7H20 : 50~350 g/L ❹ pH value: 2.5 ~4.5 Slot temperature: 40~60°C Current density: 5~40 A/m2 Processing time: 1~3 0 sec Secondly on the copper alloy layer A stabilizing layer having a thickness of between 5 A and 1 〇〇 a, which is composed of at least one selected from the group consisting of zinc oxide, chromium oxide, and nickel oxide, is formed. As an embodiment, a coating layer may be formed using an electrolytic solution 13 200927993 containing zinc ions and chromium ions. As the source of the ion in the electrolytic solution, for example, ZnS〇4, ZnC〇3, ZnCr〇4 or the like can be used. As the complex ion source in the electrolytic solution, a hexavalent chromium salt or a compound such as ZnCr〇4 can be used. 〇 3 and so on. The concentration of zinc ions in the electrolytic solution may be in the range of 2 g/L, (iv) Μ 〇 〇. 6 g/L, more preferably 0.4 〇. 5 g/L. Further, the concentration of the chromium ion in the electrolytic solution may be 0.3 to 5 g/L, preferably 〇5 to about 3^, more preferably ❹ Ο ^~ to ^. Further, 'these conditions are only for the conditions for effective clocking' and may be set outside the range of the above conditions as needed. In another embodiment, in order to form the stabilizing layer, nickel oxide and nickel metal, or zinc oxide or chromium oxide, or - may be coated. The nickel ion source as the electrolytic solution may be either _〇4 or 〇3 temple, or a combination thereof. The concentration of the recorded ions in the electrolytic solution is preferably 〇2g/L~i 2g/L. = A scaly stabilizing layer as described in U.S. Patent No. 5,9,8,544 may be used. Furthermore, these conditions are only for stabilizing layers which are formed by at least one component selected from the group consisting of oxidized oxime and oxidized records and having a thickness between 5 a over-test. Conditions may also be set outside the range of the above conditions as needed. For the solution, the concentration of 5 〇 g / L, preferably i 〇 ~ 2 〇 W, and more preferably the concentration of 8 g / L of the additive may contain other conventional additions such as Na2S04. It is desirable that the positive value of the electrolytic solution is generally in the range of 3 to 6, preferably 4, more preferably 4.8 to 5.0. The temperature of the s electrolytic solution is $2 () ° C ~ 1 〇 i) <> C, preferably 25 ° C ~ 45 is preferably 26t ~ 44. (: is more suitable. 200927993 Figure [. 2 shows the outline of the surface treatment device. The symbol shown in Figure 2 is as described in 2 U. Raw material copper foil (raw foil), 12: copper foil, 14: glossy side, 2〇: 刖Processing step, 22: pre-treatment tank, 24: lower guide roller, 26: guide roller, 3〇 washing tank, 32: washing head, 34: washing tank, 40: stabilization step, 42: Electric trough, 44: lower guide roller, 46: guide roller (cathode roller), t anode 60. dryer 62: heater, 72: ore operation device, %: dry, 77: gas conduit, 100: copper-zinc step ❺

如圖2所示,為了對銅猪12賦予電流密度,而鄰接於 銅荡12各侧,配置陽極48。導輥46為陰極輥,若藉由電 源(未®不)對陽極48施加電壓,則例如由氧化辞與氧化 成之穩疋化層49將沈積於銅箔〗2所露出之光澤 14以及消光面16上。 電流密度為!至100入/以(約10.8至約1〇8〇A/m2), 較佳為25〜50 A/ft2 (約27〇至約54〇 A/m2)為止之範圍, ^佳為30 A/ft2 (約320 A/m2)。當設有多個陽極時,電流 密度可於陽極彼此間進行改變。 口適之鍍敷時間為秒,較佳為5〜2〇秒更佳 為約15秒。特定實施形態中,累計處理時間於光澤側即平 滑側上為約3至1〇秒,於無光澤之側上為約i至5秒。 又,作為較佳例,電解溶液中鉻離子相對鋅離子之莫 耳比可為0.2〜10、較佳為卜5、更佳為約i 4。根據本發 明,適於銅箔之穩定化層之厚度可為5 A〜1〇〇 A。較佳為 2〇Α 〜5〇Α〇 你 以上所述之實施形態中,穩定化層由氧化鉻與氧化鋅 15 200927993 所構成,然而亦可僅以氧化鉻構成穩定化層。 用以應用氧化鉻穩定化層之槽之較佳條件如下所述。 1〜1 0 g/L之Cr〇3溶液(較佳為5 g/L之Cr〇3) pH 值:2As shown in Fig. 2, in order to impart a current density to the copper pig 12, adjacent to each side of the copper slab 12, the anode 48 is disposed. The guide roller 46 is a cathode roller. If a voltage is applied to the anode 48 by a power source (not included), the gloss 14 and the extinction which are deposited on the copper foil 2, for example, by the oxidized and oxidized stabilization layer 49. On the face 16. Current density is! Up to 100 in/out (about 10.8 to about 1〇8〇A/m2), preferably 25~50 A/ft2 (about 27〇 to about 54〇A/m2), ^ preferably 30 A/ Ft2 (about 320 A/m2). When a plurality of anodes are provided, the current density can be varied between the anodes. The plating time for the mouth is seconds, preferably 5 to 2 seconds, more preferably about 15 seconds. In a particular embodiment, the cumulative processing time is about 3 to 1 second on the glossy side, i.e., on the smooth side, and about i to 5 seconds on the matte side. Further, as a preferred example, the molar ratio of chromium ions to zinc ions in the electrolytic solution may be 0.2 to 10, preferably 5, more preferably about i 4 . According to the present invention, the thickness of the stabilizing layer suitable for the copper foil may be 5 A to 1 Å. Preferably, in the embodiment described above, the stabilizing layer is composed of chromium oxide and zinc oxide 15 200927993, but the stabilizing layer may be formed only by chromium oxide. Preferred conditions for applying the grooves of the chromium oxide stabilizing layer are as follows. 1~1 0 g/L of Cr〇3 solution (preferably 5 g/L of Cr〇3) pH: 2

槽之溫度:25°C 5 〜10 秒内為 ίο 〜30 A/ft2 ( 1〇8 〜32〇 A/m2) 浸潰處理:10秒 繼形成穩定化層之製程之後,進行清洗。清洗步驟中, © 例如藉由配置於銅笛上下之喷霧裝置,而對銅箱(具有穩 定化層)之面上進行水霧喷射,沖洗該面使其清潔,從^ 自該面上去除殘留之電解溶液。可藉配置於噴霧噴嘴下方 之容器來回收經清洗後之溶液。 對上表面具有穩定化層之銅箔進一步進行乾燥。如實 施形態所示,將強制空氣乾燥器配置於銅箔上下,自該強 制空氣乾燥器中喷出空氣而使銅箔表面乾燥。 〇 於形成有穩定化層之銅訂,進一步形成由電阻材料 所構成之層。作為該電阻層之例’例如可列舉Nicr合金、 合金等之電阻元件。由該電阻材料所構成:層係 來自電路基板設計之要求,其可任意進行選擇。因此 需限定於特定材料。 又’為了提高與基材(底部材料)之密合性,可視 要於電阻層之上實施各種碎烧處理。然而,該石夕烧處理為 任意的’本發明並不限定於此。 [實施例] 16 200927993 上其次,說明實施例。再者,以下之實施例係為了使本 申月案發明易於理解而寫成,但並不限於此。#,基於本 申-月案發明之技術思想之變形、實施態樣、其他例,均包 括於本發明中。 (實施例1 ) 本實施例中,使用厚度為i 8叫之電鑛銅猪。於該電 解銅珀之粗面(消光面)側形成有銅-辞合金層。The temperature of the bath: 25 ° C 5 〜 10 seconds is ίο 〜30 A / ft2 (1 〇 8 〜 32 〇 A / m2) Immersion treatment: 10 seconds After the formation of the stabilization layer, the cleaning is carried out. In the cleaning step, for example, by spraying a copper tank (with a stabilizing layer) on the surface of the copper box, the surface is sprayed with water mist, and the surface is washed and cleaned, and removed from the surface. Residual electrolytic solution. The cleaned solution can be recovered by means of a container disposed below the spray nozzle. The copper foil having a stabilizing layer on the upper surface is further dried. As shown in the embodiment, the forced air dryer is disposed above and below the copper foil, and air is ejected from the forced air dryer to dry the surface of the copper foil. Further, a layer formed of a resistive material is further formed on the copper formed with the stabilizing layer. An example of the resistive layer is, for example, a resistive element such as a Nicr alloy or an alloy. It is composed of the resistor material: the layer is required from the design of the circuit board, and can be arbitrarily selected. Therefore, it needs to be limited to specific materials. Further, in order to improve the adhesion to the substrate (bottom material), it is possible to perform various calcination treatments on the resistive layer. However, the heat treatment of the stone is arbitrary. The present invention is not limited thereto. [Embodiment] 16 200927993 Next, an embodiment will be described. Further, the following embodiments are written to make the invention of the present invention easy to understand, but are not limited thereto. #, Variations, implementations, and other examples based on the technical idea of the present invention are included in the present invention. (Embodiment 1) In this embodiment, an electric mine copper pig having a thickness of i 8 is used. A copper-alloy layer is formed on the rough side (matte side) side of the electrolytic copper.

一該鋼-鋅合金層係於以下處理條件下進行實施,而形成 每-單位面積之鋅含量為約35〇〇_m2 (後2位數經四捨 五入)之銅-辞合金層。包覆量藉由處理時間來調節。 (銅-鋅合金鍍敷之槽組成與鍍敷條件) 槽組成A steel-zinc alloy layer was applied under the following treatment conditions to form a copper-alloy layer having a zinc content per unit area of about 35 〇〇m2 (the last two digits were rounded off). The amount of coating is adjusted by the processing time. (Copper composition of zinc-zinc alloy plating and plating conditions)

CuCN : 90 g/L Zn(CN)2 : 5 g/L NaOH : 7〇 g/L Na(CN) : 20 g/L 槽溫:70。〇 電流密度:500 A/dm2 處理時間:5〜20秒 形成約 5〇 其次,於以下處理條件下,於銅·辞合金層上 A之由氧化鋅-氧化鉻所構成之穩定化層。 (穩定化處理之槽組成與處理條件)CuCN : 90 g/L Zn(CN) 2 : 5 g/L NaOH : 7 〇 g/L Na(CN) : 20 g/L Slot temperature: 70.电流 Current density: 500 A/dm2 Treatment time: 5 to 20 seconds Formation of about 5 〇 Next, under the following treatment conditions, a stabilized layer composed of zinc oxide-chromium oxide on the copper alloy layer. (Stabilization treatment tank composition and processing conditions)

槽組成 作為ZnS04之鋅:〇 53 g/L 17 200927993 作為Cr〇3之鉻:0.6 g/L Na2S04 : 11 g/L 槽之pH值:5.0 槽之溫度:42°C 電流密度:85〜160 A/m2 鍍敷時間:3〜4秒 其次’於下述條件下’使由80%之鎳(Ni)與2〇%之 鉻(Cr)所構成之合金之電阻材料附著於上述穩定化層上。 © Ni/Cr合金濺鍍: 14英吋之濺鍍裝置 功率:5〜8 kw 線性速度:1.4〜2.2 ft/min ( 0.43〜〇·67 m/min)The composition of the groove is zinc as ZnS04: 〇53 g/L 17 200927993 Chromium as Cr〇3: 0.6 g/L Na2S04: 11 g/L pH of the tank: 5.0 Temperature of the tank: 42 °C Current density: 85~160 A/m2 plating time: 3 to 4 seconds, next 'under the following conditions', a resistive material of an alloy composed of 80% nickel (Ni) and 2% chromium (Cr) is attached to the above stabilizing layer. on. © Ni/Cr alloy sputtering: 14-inch sputtering device Power: 5~8 kw Linear speed: 1.4~2.2 ft/min (0.43~〇·67 m/min)

Ni/Cl合金之厚度:約100 A, 再者,該電阻材料之薄片電阻率為約16〇 Ω/平方。 對包覆以上㈣之包覆層’分析常態剝離值、焊料處 ❹灸之剝離值(耐熱性)、鹽酸處理後之剝離值(耐鹽酸 者,焊料處理後之剝離值,係於26(rc之熔融焊料槽 曰責0私(即接党加熱處理後之狀態)後測定之剝離值, ,料處理後之剝離值係表示該處理(受到 之剝離值。該值用以評價耐熱性。 之後 於室、θ下、酸處理後之剝離值,係表示使用18 wt%之鹽酸, 離二評值,,鹽酸處理後之剝 200927993 以上結果,常態剝離值為0.81 kg/cm,焊料處理後之剝 離值(财熱性)為0.77 kg/cm,進而鹽酸處理後之剝離值(耐 鹽酸性)為0.70 kg/cm,焊料處理後以及鹽酸處理後劣化較 少,且均顯示良好之性質。 [表1]The thickness of the Ni/Cl alloy is about 100 A. Further, the resistive material has a sheet resistivity of about 16 Ω Ω/square. For the coating of the above (4) coating, the analysis of the normal peeling value, the peeling value of the moxibustion at the solder (heat resistance), and the peeling value after the hydrochloric acid treatment (the hydrochloric acid-resistant, peeling value after the solder treatment, is based on 26 (rc) The molten solder bath is responsible for the peeling value measured after the private state (that is, the state after the heat treatment of the party), and the peeling value after the material treatment indicates the treatment (the peeling value is received. This value is used to evaluate the heat resistance. The peeling value after room, θ, and acid treatment means that 18 wt% hydrochloric acid is used, and the value of the peeling is 2, and the peeling of the hydrochloric acid after the treatment is 200927993. The normal peeling value is 0.81 kg/cm, and the solder is treated. The peeling value (coinage property) was 0.77 kg/cm, and the peeling value (hydrochloric acid resistance) after hydrochloric acid treatment was 0.70 kg/cm, and the deterioration after solder treatment and hydrochloric acid treatment was small, and both showed good properties. 1]

銅-辞合金層之鋅 含量(pg/dm2) 常態剝離強度 (kg/cm) 焊料槽浸潰 後(kg/cm) 鹽酸浸潰後 (kg/cm) 實施例1 3500 0.81 0.77 0.70 實施例2 2000 0.71 0.60 0.63 實施例3 2500 0.76 0.73 0.67 實施例4 3000 0.81 0.75 0.70 實施例5 4000 0.84 0.80 0.70 實施例6 4500 0.86 0.82 0.73 實施例7 5000 0.88 0.86 0.71 實施例8 5500 0.92 0.90 0.69 實施例9 6000 0.91 0.87 0.63 實施例10 6500 0.90 0.87 0.56 實施例11 7000 0.95 0.90 0.55 比較例1 500 0.49 0.49 0.45 比較例2 10000 0.93 0.91 0.44 其中,鋅含量之末2位數之數值已四捨五入。 焊料槽浸潰後:表示260°C之熔融焊料槽浸潰後之剝離強度。 鹽酸浸潰後:表示1 8 wt%之鹽酸浸潰後之剝離強度。 (實施例2〜11)[辞含量] 其次,將顯示良好特性之實施例1之條件作為基本, 形成將每一單位面積之辞含量改變後(1〇〇〇〜9000 pg/dm2) 之銅-鋅合金層。同樣地2位數以下進行四捨五入。銅-鋅合 金層之鋅含量以外的處理條件與實施例1相同。包覆量藉 由處理時間來調節。其結果示於表1。 19 200927993 再者’作為比較,將形成有本發明之條件外的鋅含量 之銅鋅合金層表示為比較例1以及比較例2。 自表1可知’於銅·鋅合金層中之鋅含量為約3500 ( 2位數以下經四捨五入)之情形時(實施例丨), 系I剝離強度、耐熱性、耐鹽酸性良好,顯示獲得平衡之 性質。Zinc content of copper-internal alloy layer (pg/dm2) Normal peel strength (kg/cm) After solder bath impregnation (kg/cm) After hydrochloric acid leaching (kg/cm) Example 1 3500 0.81 0.77 0.70 Example 2 2000 0.71 0.60 0.63 Example 3 2500 0.76 0.73 0.67 Example 4 3000 0.81 0.75 0.70 Example 5 4000 0.84 0.80 0.70 Example 6 4500 0.86 0.82 0.73 Example 7 5000 0.88 0.86 0.71 Example 8 5500 0.92 0.90 0.69 Example 9 6000 0.91 0.87 0.63 Example 10 6500 0.90 0.87 0.56 Example 11 7000 0.95 0.90 0.55 Comparative Example 1 500 0.49 0.49 0.45 Comparative Example 2 10000 0.93 0.91 0.44 wherein the value of the last two digits of the zinc content has been rounded off. After the solder bath is immersed: the peel strength after the molten solder bath at 260 ° C is impregnated. After leaching with hydrochloric acid: indicates the peel strength after immersion of 18% by weight of hydrochloric acid. (Examples 2 to 11) [Range content] Next, the condition of Example 1 showing good characteristics is used as a basic, and copper having a change in the content per unit area (1 〇〇〇 to 9000 pg/dm 2 ) is formed. - a zinc alloy layer. Similarly, rounding down is performed under 2 digits. The treatment conditions other than the zinc content of the copper-zinc alloy layer were the same as in the first embodiment. The amount of coating is adjusted by the processing time. The results are shown in Table 1. 19 200927993 Further, as a comparison, a copper-zinc alloy layer having a zinc content outside the conditions of the present invention was shown as Comparative Example 1 and Comparative Example 2. It can be seen from Table 1 that when the zinc content in the copper-zinc alloy layer is about 3,500 (two or less digits are rounded off) (Example 丨), the peel strength, heat resistance, and hydrochloric acid resistance are good, and it is shown that The nature of balance.

❹ 相對於此,隨著每一單位面積之鋅含量之增加,常態 剥離強度與耐熱性雖會升高,但顯示出耐鹽酸性降低之傾 向相反地,隨著每一單位面積之鋅含量之減少,耐鹽酸 ί生雖會升咼,但顯不出常態剝離強度與耐熱性降低之傾向。 比較例1中可知因辞含量較少,故常態剝離強度、耐 熱性、耐鹽酸性之任一者均較低,又比較例2 +,可知因 、辛3量過多’故常態剝離強度、耐熱性雖較高,但财鹽酸 性差且均超過可容許之極限,因而不適於實用。如上所 述可知為了使常態剝離強度、耐熱性、耐鹽酸性提高, 銅-辞合金層之存在極其有效。 (實施例1〜實施例丨-4)[銅箔之厚度] 其次,將顯示出良好特性之實施例丨之條件作為基本, 對銅荡厚度改變後之情形時的常態剝離強度、_熱性、耐 鹽酸性加以分析。除了㈣厚度改變之外,其他與實施例! 相同。包覆量藉由處理時間來調節。其結果示於表2。 >於實施例i之情形時,以厚度為18 μιη之電解銅荡進 仃實施,但於9 μΐη〜35 μιη之範圍内進行更改而實施 形時,常態剝離強度對顧厚而變化較大。即隨著銅箱厚 20 200927993 度之增加,剝離強度亦會增加。 然而,焊料處理後之制離值之劣化率以及鹽酸處理後 之剝離劣化率並未相應產生較大變化。因此,自處理後之 劣化率之觀點來考慮,可知焊料處理後之剝離強度以及鹽 酸處理後之剝離強度不會因銅箔之厚度而受到較大影響。 其結果示於表2。-般可認為銅箔之厚度增加會導致剝離強 度增加。 [表2]相对 In contrast, as the zinc content per unit area increases, the normal peel strength and heat resistance increase, but the tendency to reduce hydrochloric acid resistance is reversed, conversely, with the zinc content per unit area It is reduced, and the hydrochloric acid-resistant sulphate will rise, but it does not show a tendency to decrease the normal peel strength and heat resistance. In Comparative Example 1, it can be seen that the content of the element is small, so that the normal peel strength, the heat resistance, and the hydrochloric acid resistance are both low, and in Comparative Example 2 +, it is known that the amount of the octane 3 is too large, so the normal peel strength and heat resistance are normal. Although the sex is high, the hydrochloric acid property is poor and exceeds the allowable limit, so it is not suitable for practical use. As described above, in order to improve the normal peel strength, the heat resistance, and the hydrochloric acid resistance, the presence of the copper-alloy layer is extremely effective. (Example 1 to Example 丨-4) [Thickness of Copper Foil] Next, the conditions of the examples showing good characteristics are taken as a basic condition, and the normal peel strength and _heat property in the case where the thickness of the copper is changed are Hydrochloric acid resistance was analyzed. In addition to (four) thickness changes, other with the embodiment! the same. The amount of coating is adjusted by the processing time. The results are shown in Table 2. > In the case of the embodiment i, the electrolytic copper having a thickness of 18 μm is carried out, but when the shape is changed within the range of 9 μΐη to 35 μηη, the normal peel strength varies greatly with respect to thickness. . That is, as the copper box thickness increases by 200927993, the peel strength will also increase. However, the deterioration rate of the separation value after the solder treatment and the peeling deterioration rate after the hydrochloric acid treatment did not correspondingly change greatly. Therefore, from the viewpoint of the deterioration rate after the treatment, it is understood that the peel strength after the solder treatment and the peel strength after the salt acid treatment are not greatly affected by the thickness of the copper foil. The results are shown in Table 2. It is generally believed that an increase in the thickness of the copper foil results in an increase in peel strength. [Table 2]

處理後之剝離強度)/處理前之剝 ❹ (實施例12)[矽烷處理] 本實施例中,使用厚度為18pm、35pm之電鍍銅猪, 並且直接使用該電解銅落之粗面之情形時以及於經粗化處 理之面上,於與實施例!相同之條件下,即使用銅·辞合金 鑛敷槽’絲與實施们㈣之㈣條件下,形成銅-辞合 金鍍敷層》 再者’上述粗化處理之條件如下所述。 21 200927993Peel strength after treatment) / peeling before treatment (Example 12) [Hane treatment] In this example, an electroplated copper pig having a thickness of 18 pm and 35 pm was used, and when the rough surface of the electrolytic copper was directly used, And on the roughened surface, in the examples! Under the same conditions, the conditions of the above-described roughening treatment were as follows, that is, the conditions of the above-mentioned roughening treatment were carried out under the conditions of (b) of the copper alloy metal ore and the fourth (4). 21 200927993

Cu離子濃度:20 g/L 硫酸濃度:60 g/L 電解液溫度:40°C 電流密度:30 A/dm2 處理時間:5秒 藉由上述,形成每一單位面積之辞含量為約3500 mg/m2 (後2位數經四捨五入)之銅-鋅合金層。其次,於 該銅-辞合金層上,以與實施例1相同之方式,形成Cr-Zn 〇 氧化物之穩定化層。 進而,於該Cr-Zn氧化物之穩定化層上,藉由激鍍形成 由80%之鎳(Ni)與20%之鉻(Cr)所構成之合金之電阻 材料。其條件亦與實施例1相同。 其次,於電阻層上,實施矽烷處理(TEOS : Tetraethoxysilane,四乙氧基石夕烧)。其結果示於表3。如 該表3所示,可知常態剝離強度升高,故矽烷處理為有效。 [表3] 銅箔之厚度 (μηι) 有無粗 化處理 有無矽 烷處理 常態剝離強度 (kg/cm) 實施例12 18 無 有 1.00 實施例12-2 35 無 有 1.50 實施例12-3 18 有 有 1.30 實施例12-4 35 有 有 1.60 辞含量均為3500 pg/dm2 於電阻層上實施矽烷處理(TEOS ) (實施例13) [Cr電阻膜] 22 200927993 於上述實施例1之條件下,形成每-單位面積之鋅含 量為約3500 pg/dm2 (後2位數經四捨五入)之銅_鋅合金 層’並於該Cu_Zn合金層上形成Cr_Zn氧化物之穩定化層。 其次’於該Cr-Ζη氧化物之穩定化層上藉由濺鍍形成鉻 電阻膜。 鉻濺鍍之條件如下所述。 使用14英吋之濺鍍裝置。 功率:5〜8 kw Ϊ 線性速度:L8 〜2.8ft/min(〇55 〜〇85m/min) 鉻之厚度:100 A、1000 A、1200 A、2000 A、3〇〇〇 A、 4000 A共6種 本實施例13中,對常態剝離強度、耐熱性、耐鹽酸性 進行分析,因與實施例1相同,故雖不示於表中,但均顯 示出良好之性質。由以上可知與電阻層之種類以及厚度並 無關聯,銅-鋅合金層之形成均為有效。 (實施例14〜實施例14·4) [Ni/Cr/A1/Si合金電阻膜] 於上述實施例1之條件下,形成每一單位面積之鋅含 量為約3500 pg/dm2 (後2位數經四捨五入)之銅_鋅合金 層,並於該銅-辞合金層上形成鉻_鋅氧化物之穩定化層。 其次,於下述條件下,使由56〇/〇之鎳(Ni)、38%之鉻 (Cr)以及作為推雜劑之由4%之銘(A1)與2%之妙(Si) 所構成之合金附著於該鉻-鋅氧化物之穩定化層上。 Ni/Cr/Al/Si合金濺鍍: 14英吋之濺鍍裝置 23 200927993 功率:0.85 〜2.3 kw 線性速度:0.49 ft/min ( 0.15 m/min) 薄片電阻率:約90〜300 Ω/平方 本實施例14〜實施例14-4中,形成表4所示之薄片電 阻之膜。對此時之常態剝離強度、耐熱性、耐鹽酸性進行 分析,與實施例1相同,且如表4所示,均顯示出良好之 性質。由以上可知,其與Ni/Cr/Al/Si合金電阻層並無關聯, 銅-辞合金層之形成為有效。 © [表 4] 薄片電阻值 (ohm/sq ) 常態剝離強 度(kg/cm) 焊料槽浸潰 後之剝離強 度(kg/cm) 鹽酸浸潰後 之剝離強度 (kg/cm) 實施例14 94 0.81 0.75 0.72 實施例14-2 135 0.79 0.77 0.70 實施例14-3 233 0.82 0.78 0.71 實施例14-4 286 0.80 0.74 0.73 鋅含量均為3500 pg/dm2 銅箔之厚度均為1 8 μιη (實施例I5〜實施例15-4)[壓延銅箔] 本實施例中,使用9 μπι、12 μιη、18 μιη、35 μιη之壓 延銅猪。於以下條件下對該壓延銅箱實施粗化處理。Cu ion concentration: 20 g/L Sulfuric acid concentration: 60 g/L Electrolyte temperature: 40 ° C Current density: 30 A/dm 2 Treatment time: 5 seconds By the above, the content of each unit area is about 3500 mg. /m2 (the last 2 digits are rounded off) of the copper-zinc alloy layer. Next, a stabilizing layer of Cr-Zn lanthanum oxide was formed on the copper-alloy layer in the same manner as in the first embodiment. Further, on the stabilized layer of the Cr-Zn oxide, a resistive material of an alloy composed of 80% of nickel (Ni) and 20% of chromium (Cr) was formed by laser plating. The conditions are also the same as in the first embodiment. Next, on the resistive layer, decane treatment (TEOS: Tetraethoxysilane, tetraethoxy cerium oxide) was carried out. The results are shown in Table 3. As shown in Table 3, it is understood that the normal peel strength is increased, so the decane treatment is effective. [Table 3] Thickness of copper foil (μηι) Whether or not roughening treatment with or without decane treatment Normal peel strength (kg/cm) Example 12 18 No 1.00 Example 12-2 35 No 1.50 Example 12-3 18 1.30 Example 12-4 35 There are 1.60 words with a content of 3500 pg/dm2 and a decane treatment (TEOS) on the resistance layer (Example 13) [Cr resistance film] 22 200927993 Under the conditions of the above Example 1, formation The zinc content per unit area is about 3500 pg/dm2 (the last 2 digits are rounded off) of the copper-zinc alloy layer and a stabilizing layer of Cr_Zn oxide is formed on the Cu_Zn alloy layer. Next, a chromium resistive film is formed by sputtering on the stabilized layer of the Cr-Ζη oxide. The conditions for chrome sputtering are as follows. Use a 14-inch sputtering device. Power: 5~8 kw 线性 Linear speed: L8 ~ 2.8ft/min (〇55 ~ 〇85m/min) Thickness of chrome: 100 A, 1000 A, 1200 A, 2000 A, 3 A, 4000 A In the sixteenth embodiment, the normal peel strength, the heat resistance, and the hydrochloric acid resistance were analyzed. Since they were the same as in Example 1, they were not shown in the table, but all showed good properties. From the above, it is understood that the formation of the copper-zinc alloy layer is effective irrespective of the type and thickness of the resistance layer. (Example 14 to Example 14·4) [Ni/Cr/A1/Si alloy resistive film] Under the conditions of the above Example 1, the zinc content per unit area was formed to be about 3500 pg/dm2 (last 2 positions) The copper-zinc alloy layer is rounded off and a stabilizing layer of chromium-zinc oxide is formed on the copper-alloy layer. Next, under the following conditions, the nickel (Ni) of 56〇/〇, the chromium (Cr) of 38%, and the 4% (A1) and 2% (Si) of the dopant are used. The constituent alloy is attached to the stabilized layer of the chromium-zinc oxide. Sputtering of Ni/Cr/Al/Si alloy: 14-inch sputtering device 23 200927993 Power: 0.85 to 2.3 kw Linear velocity: 0.49 ft/min (0.15 m/min) Sheet resistivity: about 90~300 Ω/square In the present Example 14 to Example 14-4, the film resistance of the sheet shown in Table 4 was formed. The normal peel strength, heat resistance, and hydrochloric acid resistance at this time were analyzed, and the same as in Example 1, and as shown in Table 4, all showed good properties. From the above, it is known that it is not related to the Ni/Cr/Al/Si alloy resistance layer, and the formation of the copper-alloy layer is effective. © [Table 4] Sheet resistance value (ohm/sq) Normal peel strength (kg/cm) Peel strength after solder bath dipping (kg/cm) Peel strength after hydrochloric acid impregnation (kg/cm) Example 14 94 0.81 0.75 0.72 Example 14-2 135 0.79 0.77 0.70 Example 14-3 233 0.82 0.78 0.71 Example 14-4 286 0.80 0.74 0.73 The zinc content is 3500 pg/dm2 The thickness of the copper foil is 1 8 μm (Example I5 to Example 15-4) [rolled copper foil] In the present example, rolled copper pigs of 9 μm, 12 μm, 18 μm, and 35 μm were used. The rolled copper box was subjected to roughening treatment under the following conditions.

Cu離子濃度:20 g/L 硫酸濃度:60 g/L 電解液溫度:40°C 電流密度:30 A/dm2 處理時間:5秒 24 200927993 其次,於下述條件下於該經粗化處理之壓延銅ϋ上形 成3500 pg/dm2之鑛Ζη層。鍍鋅之厚度由處理時間進行調 節0 鍍鋅槽組成:Cu ion concentration: 20 g/L Sulfuric acid concentration: 60 g/L Electrolyte temperature: 40 ° C Current density: 30 A/dm 2 Treatment time: 5 seconds 24 200927993 Next, under the following conditions, the roughened treatment A layer of 3,500 pg/dm2 of ore is formed on the calendered copper crucible. The thickness of the galvanizing is adjusted by the processing time. 0 The galvanizing tank consists of:

ZnS04*7H20 : 50〜350 g/L pH 值:3 槽溫:50°C 電流密度:20 A/m2 處理時間:2〜3秒 於3 00。(:下對該形成有處理層之銅箔進行加熱處理,形 成銅-鋅之合金層。如此形成之銅-鋅合金層之每一單位面積 之鋅含量為約3500 pg/dm2 (後2位數經四捨五入)。 其次,於以下處理條件下,於銅_辞合金層上形成約5〇 入之由氧化鋅-氧化鉻所構成之穩定化層。 穩定化處理: 〇ZnS04*7H20 : 50~350 g/L pH value: 3 bath temperature: 50 °C current density: 20 A/m2 Processing time: 2~3 seconds at 300. (The copper foil on which the treated layer is formed is heat-treated to form a copper-zinc alloy layer. The copper content per unit area of the thus formed copper-zinc alloy layer is about 3500 pg/dm2 (last 2 positions) The number is rounded off. Next, under the following processing conditions, a stabilizing layer composed of zinc oxide-chromium oxide is formed on the copper alloy layer by about 5 Å. Stabilization treatment: 〇

作為 ZnS04 之鋅:0.53 g/L 作為Cr03之鉻:0.6 g/L Na2S04 : 11 g/L 槽之pH值:5.0 槽之溫度:42°C 電流密度:85〜160 A/m2 鍍敷時間:3〜4秒 其次’於下述條件下, 路(Cr)所構成之合金之電 使由80°/。之鎳(犯)與20%之 阻材料附著於上述穩定化層上。 25 200927993Zinc as ZnS04: 0.53 g/L Chromium as Cr03: 0.6 g/L Na2S04: 11 g/L pH of the tank: 5.0 Temperature of the tank: 42 °C Current density: 85~160 A/m2 Plating time: 3 to 4 seconds secondly, under the following conditions, the electric resistance of the alloy formed by the road (Cr) is 80°/. Nickel (officidal) and 20% of the resistive material are attached to the above stabilizing layer. 25 200927993

Ni/Cr合金減鑛: 14英吋之濺鍍裝置 功率:5〜8 kw 線性速度:14〜. / Λ .2 ft/min ( 0.43〜0.67 m/min)Ni/Cr alloy reduction: 14-inch sputtering device Power: 5~8 kw Linear speed: 14~. / Λ .2 ft/min (0.43~0.67 m/min)

Ni/Cr合金之厚度:約l〇〇 A, 再者。玄電阻材料之薄片電阻率為約⑽〇 /平方。 對包覆以上銅羯之包覆層’分析常態剝離強度、耐熱 ❹Thickness of Ni/Cr alloy: about l〇〇 A, again. The sheet resistivity of the mysterious resistive material is about (10) 〇 / square. Analysis of the normal peel strength and heat resistance of the coating layer coated with the above copper crucible

性(焊料處理後之剝離強度)、耐鹽酸性(鹽酸處理後之 剝離強度)。其結果+仇主c 、、μ ;表5。如該表5所示,常態剝離強 度為0.64〜1.22kg/cm,焊料浸潰後之剝離強度為〇6〇〜 1.16 kg/cm,進而18 wt%之鹽酸浸潰後之剝離強度為 〜1 ·09 kg/cm,均顯示出良好之性質。 又,以與上述實施例2〜n相同之方式,進行cu_Zn 合金層之厚度經更改後之試驗,而其結果相同。因此,可Π 知電解銅泊以及壓延銅箔形成每一單位面積之鋅含量均為 1000〜9000 pg/dm2之銅-鋅合金層可使接著力提高(常釀剝 離強度增加),且對耐熱性以及耐酸性有效。 [表5] 實施例15 實施例15-2 實施例15-3 實施例15-4 銅箔之厚度 (μιη) 9 12 18 35 常態剝離強度 (kg/cm) 0.64 0.72 0.89 1.22 烊料槽浸潰後 (kg/cm) 0.60 0.69 0.85 1.16 鋅含量均為3500 pg/dm' 鹽酸浸漬後Sex (peel strength after solder treatment), hydrochloric acid resistance (peel strength after hydrochloric acid treatment). The result + venge c, , μ; Table 5. As shown in Table 5, the normal peel strength was 0.64 to 1.22 kg/cm, and the peel strength after solder dipping was 〇6 〇 to 1.16 kg/cm, and the peel strength after immersion of 18 wt% hydrochloric acid was 〜1. · 09 kg / cm, both showed good properties. Further, in the same manner as in the above Examples 2 to n, the test of the thickness of the cu_Zn alloy layer was changed, and the results were the same. Therefore, it is known that the electrolytic copper mooring and the rolled copper foil form a copper-zinc alloy layer having a zinc content of 1000 to 9000 pg/dm 2 per unit area, which can improve the adhesion (increased peeling strength) and is resistant to heat. Sexual and acid resistant. [Table 5] Example 15 Example 15-2 Example 15-3 Example 15-4 Thickness of copper foil (μιη) 9 12 18 35 Normal peel strength (kg/cm) 0.64 0.72 0.89 1.22 Immersion of the trough After (kg/cm) 0.60 0.69 0.85 1.16 Zinc content is 3500 pg/dm' After hydrochloric acid impregnation

26 200927993 j [產業上之可利用性] 本發明藉由使用内置有電阻膜層之銅箔,而於電路設 計時,無需重新單獨形成電阻元件,只要在形成於銅箔中 之電阻膜層上,使用氣化銅(n )等之蝕刻溶液,使電阻元件 露出即可,因此具有可使焊接省去或者大幅省略,從而顯 著簡化了封裝步驟,由於顯著減少電路設計以及製作步 驟,且於銅箔中内置電阻體,故具有改善高頻區域中之信 號特性之效果。進而,本發明具有可使如此内置有電阻膜 層之銅箔所伴有的缺點即接著力降低得以改善、且具有良 好之耐熱性以及耐酸性之優異效果,因此利於用作印刷電 路基板。 【圖式簡單說明】 圖1係表示電解銅箱製造裝置之概要之圖。 圖2係表示表面處理I置之概要之圖。 【主要元件符號說明】 1 陰極滾筒26 200927993 j [Industrial Applicability] The present invention uses a copper foil having a resistive film layer built therein, and it is not necessary to separately form a resistive element in circuit design as long as it is formed on a resistive film layer formed in a copper foil. The etching solution of vaporized copper (n) or the like is used to expose the resistive element, so that the soldering can be omitted or largely omitted, thereby significantly simplifying the packaging step, due to the significant reduction in circuit design and fabrication steps, and in copper. Since the resistor is built in the foil, it has the effect of improving the signal characteristics in the high frequency region. Further, the present invention has an advantage that the copper foil having the resistive film layer described above can be improved, that is, the adhesive strength is improved, and the excellent heat resistance and acid resistance are excellent, so that it can be used as a printed circuit board. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an outline of an electrolytic copper box manufacturing apparatus. Fig. 2 is a view showing the outline of the surface treatment I. [Main component symbol description] 1 cathode roller

2 B 陽極(不溶性陽極) 3 間隙 4 生箔 11 原料銅鴒(生箔) 12 鋼箔 14 光澤側 27 2009279932 B Anode (insoluble anode) 3 Clearance 4 Raw foil 11 Raw material copper crucible (raw foil) 12 Steel foil 14 Gloss side 27 200927993

20 前處理步驟 22 前處理槽 24 下部導輥 26 導輥 30 洗淨槽 32 水洗喷頭 34 洗淨槽 40 安定化步驟 42 電槽 44 下部導輥 46 導輥(陰極輥) 48 陽極 60 乾燥器 62 加熱器 72 濺鍍裝置 76 77 氣體導管 100 銅-鋅步驟 2820 Pretreatment step 22 Pretreatment tank 24 Lower guide roller 26 Guide roller 30 Wash tank 32 Wash nozzle 34 Wash tank 40 Stabilization step 42 Tram 44 Lower guide roller 46 Guide roller (cathode roller) 48 Anode 60 Dryer 62 Heater 72 Sputtering Unit 76 77 Gas Pipeline 100 Copper-Zinc Step 28

Claims (1)

200927993 十、申請專利範面: i-種具備電阻膜層之銅箱 微 化面或光澤面上具備每 〃特徵在於:於銅箱之粗 “g/dm2之銅_鋅合金 面積之鋅含量為麵〜觸 化辞、氧化鉻、氧化錦…二。金層上形成有由選自氧 A〜1ί)ΠΑ ' 乂―種成分所構成之具有5 Α 100 Α之間的厚廣之籍定 由雷·社 a之穩疋化層,於該穩定化層上具備有 由電阻材料所構成之膜層。 2.如申請專利範圍第i項之具備電阻膜層之 鋼箱之箱厚為5〜35 μιη。 一中 冲3·如申請專利範圍第1項或第2項之具備電阻臈層之鋼 /白,其中於電解銅箔之消光面或者壓延銅箔經粗化處理之 面側’形成有電阻層。 十一、圈式: 如次頁200927993 X. Application for patents: i-type copper box with resistive film layer has a micro-finished surface or a glossy surface with each enamel characteristic: the copper content of the copper box is "g/dm2 copper_zinc alloy area is Face ~ touched words, chrome oxide, oxidized bromine ... 2. The gold layer is formed with a thick choice of 5 Α 100 构成 composed of a component selected from the group consisting of oxygen A~1 ί) ΠΑ ' 乂The stable layer of Ray A is provided with a film layer composed of a resistive material on the stabilizing layer. 2. The thickness of the steel box having the resistive film layer in the i-th aspect of the patent application is 5~ 35 μιη。 一中冲3·, as in the scope of claim 1 or 2, the steel/white with a resistive layer, which is formed on the matte side of the electrolytic copper foil or the roughened side of the rolled copper foil There is a resistance layer. Eleven, circle: as the next page 2929
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