TWI443226B - Copper foil with resistive film - Google Patents

Copper foil with resistive film Download PDF

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TWI443226B
TWI443226B TW097143314A TW97143314A TWI443226B TW I443226 B TWI443226 B TW I443226B TW 097143314 A TW097143314 A TW 097143314A TW 97143314 A TW97143314 A TW 97143314A TW I443226 B TWI443226 B TW I443226B
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copper foil
layer
copper
zinc
resistive
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TW200927993A (en
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Masaru Sakamoto
Toshio Kurosawa
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/58Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0361Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Laminated Bodies (AREA)
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Description

具備電阻膜層之銅箔 Copper foil with resistive film layer

本發明係關於一種膜之密合性優異,且剝離強度高之具備電阻膜層之銅箔。 The present invention relates to a copper foil having a resistive film layer which is excellent in adhesion of a film and has high peel strength.

作為印刷電路基板之配線材料,一般而言使用銅箔。該銅箔根據其製造法而分為電解銅箔與壓延銅箔。該銅箔之厚度範圍可自為5μm之非常薄之銅箔至140μm左右之厚銅箔為止進行任意調整。 As a wiring material of a printed circuit board, a copper foil is generally used. This copper foil is classified into an electrolytic copper foil and a rolled copper foil according to the manufacturing method. The thickness of the copper foil can be arbitrarily adjusted from a very thin copper foil of 5 μm to a thick copper foil of about 140 μm.

此等銅箔接合於由環氧樹脂或聚醯亞胺樹脂等之樹脂所構成之基板上,來用作印刷電路用基板。銅箔中要求充分確保與作為基板之樹脂之接著強度,因此,電解銅箔一般是利用於製箔時所形成之所謂消光面(mat surface)之粗面,並進一步於其上實施表面粗化處理而使用。又,壓延銅箔亦同樣地於其表面上實施粗化處理而使用。 These copper foils are bonded to a substrate made of a resin such as an epoxy resin or a polyimide resin to be used as a substrate for a printed circuit. In the copper foil, it is required to sufficiently ensure the bonding strength with the resin as the substrate. Therefore, the electrolytic copper foil is generally used for the rough surface of a so-called mat surface formed at the time of foil formation, and further roughening the surface thereon. Used for processing. Further, the rolled copper foil is similarly applied to the surface thereof by a roughening treatment.

最近,提出了於作為配線材料之銅箔上,進一步形成由電阻材料所構成之薄膜層(參照專利文獻1、2)。於電子電路基板中電阻元件雖不可缺少,但若使用具備電阻層之銅箔,則只要在形成於銅箔上之電阻膜層上,使用氯化銅(Ⅱ)等之蝕刻溶液,將電阻元件外露即可。 Recently, it has been proposed to further form a thin film layer made of a resistive material on a copper foil as a wiring material (see Patent Documents 1 and 2). In the electronic circuit board, a resistive element is indispensable. However, if a copper foil having a resistive layer is used, an etching solution such as copper (II) chloride is used on the resistive film layer formed on the copper foil to form a resistive element. Exposed.

因此,相較先前僅有之以焊接法將晶片電阻元件加以表面封裝於基板上之方法,可藉由電阻之基板內置化,而有效利用有限之基板之表面積。 Therefore, compared with the previous method of surface-mounting the chip resistor element on the substrate by soldering, the surface area of the substrate can be effectively utilized by the built-in substrate of the resistor.

又,於多層基板內部形成電阻元件使得設計上之限制變少,從而可縮短電路長度,藉此亦可謀求電氣特性之改善。因此,若使用具備電阻層之銅箔,則可使焊接變得不需要或者大幅省略,從而可謀求提高輕量化.可靠性。如上所述,內置有電阻膜之基板具有許多優點。 Further, by forming a resistor element inside the multilayer substrate, design restrictions are reduced, and the circuit length can be shortened, whereby electrical characteristics can be improved. Therefore, if a copper foil having a resistive layer is used, soldering can be eliminated or largely omitted, and weight reduction can be achieved. reliability. As described above, a substrate having a resistive film built therein has many advantages.

此等電阻材料中所使用之作為基底之銅箔,係於在其上進一步形成電阻層之前提下實施表面處理,因此雖通常與一般之印刷基板配線所用之銅箔不同,但藉由粗化來確保與樹脂之接著強度方面則為相同。 The copper foil used as the base material in these resistive materials is subjected to surface treatment before the resistive layer is further formed thereon. Therefore, although it is usually different from the copper foil used for general printed circuit board wiring, it is roughened. To ensure the same strength as the resin.

於評價電阻材料之接著強度之情形時,必須研究銅箔與電阻膜間之強度以及電阻膜與樹脂間之強度此兩者,於拉伸試驗等中自該兩者中之強度較弱者之界面會產生剝離。於任一情形時均為表面粗糙度越大其接著強度越高。接著強度一般認為係受到表面粗糙度與除此之外之表面化學種類(元素種類)等之要素的影響。 In the case of evaluating the adhesion strength of the resistive material, it is necessary to study the strength between the copper foil and the resistive film and the strength between the resistive film and the resin, and the interface between the two of them is weak in the tensile test or the like. There will be peeling. In either case, the greater the surface roughness, the higher the subsequent strength. The strength is generally considered to be affected by factors such as surface roughness and other surface chemical species (element types).

另一方面,因作為持續高性能化之印刷電路基板所要求之更微小電阻電路之形成或者高頻特性改善之要求,而要求抑制電阻材料之表面粗糙度。為了將其加以實現,提高不依賴表面粗糙度之接著強度之方法變得不可或缺。 On the other hand, it is required to suppress the surface roughness of the resistive material because of the formation of a finer resistance circuit required for a high-performance printed circuit board or the improvement of high-frequency characteristics. In order to achieve this, a method of increasing the adhesion strength independent of surface roughness becomes indispensable.

專利文獻1:日本專利第3311338號公報 Patent Document 1: Japanese Patent No. 3311338

專利文獻2:日本專利第3452557號公報 Patent Document 2: Japanese Patent No. 3452557

本發明提供一種具備電阻膜層之銅箔,係藉由於銅箔上進一步形成電阻膜層,而可實現電阻之基板內置化,且使其之接著性提高。 The present invention provides a copper foil having a resistive film layer, whereby a resistive film layer is further formed on a copper foil, whereby a substrate of a resistor can be built in, and adhesion thereof can be improved.

本發明者等人為了解決上述問題而進行了努力研究,結果獲得以下見解:於銅箔與電阻膜層之間形成提高接著力之層為有效。 In order to solve the above problems, the inventors of the present invention have conducted intensive studies, and as a result, it has been found that it is effective to form a layer for improving the adhesion between the copper foil and the resistive film layer.

根據上述見解,本發明提供 According to the above findings, the present invention provides

1)一種具備電阻膜層之銅箔,該電阻膜層係於銅箔之粗化面或光澤面上具備每一單位面積之鋅含量為1000~9000μg/dm2之銅-鋅合金層,於該銅-鋅合金層上形成有由選自氧化鋅、氧化鉻、氧化鎳中之至少一種成分所構成且具有5Å~100Å之間的厚度之穩定化層,於該穩定化層上具備由電阻材料所構成之膜層。 1) A copper foil having a resistive film layer having a copper-zinc alloy layer having a zinc content of 1000 to 9000 μg/dm 2 per unit area on a roughened surface or a glossy surface of the copper foil. a stable layer composed of at least one selected from the group consisting of zinc oxide, chromium oxide, and nickel oxide and having a thickness of between 5 Å and 100 Å is formed on the copper-zinc alloy layer, and the resistive layer is provided with a resistor. A layer of material.

於將具備電阻膜層之銅箔用作電路基板用之膜之情形時,可認為若於銅箔上形成由選自氧化鋅、氧化鉻、氧化鎳之中的至少一種成分所構成之穩定化層,且進一步於其上形成電阻層,即可獲得與銅箔之充分之接著強度。然而,於作為基底之銅箔中使用粗化程度經降低之粗糙度小的銅箔之情形時,則有時會產生接著力不充分之問題。 When a copper foil having a resistive film layer is used as a film for a circuit board, it is considered that stabilization of at least one component selected from the group consisting of zinc oxide, chromium oxide, and nickel oxide is formed on the copper foil. The layer, and further forming a resistive layer thereon, can obtain sufficient bonding strength with the copper foil. However, when a copper foil having a reduced roughness is used for the copper foil as the base, there is a problem that the adhesion is insufficient.

本發明者等人發現,為了改善此情況,有效的是於形成上述穩定化層之前,形成每一單位面積之鋅含量為1000~9000μg/dm2之銅-鋅合金層。銅箔以及銅-鋅合金層與穩 定化層之間,繼而與電阻膜層之接著力之改善,可利用剝離強度進行評價。 The present inventors have found that in order to improve this, it is effective to form a copper-zinc alloy layer having a zinc content per unit area of 1000 to 9000 μg/dm 2 before the formation of the above-mentioned stabilizing layer. The improvement of the adhesion between the copper foil and the copper-zinc alloy layer and the stabilizing layer and then the resistive film layer can be evaluated by the peel strength.

視需要,於實施如下表面處理的銅箔之面上,形成每一單位面積之鋅含量為1000~9000μg/dm2之銅-鋅合金層。其步驟為用以使接著強度提高之重要步驟。每一單位面積之鋅含量未滿1000μg/dm2之銅-鋅合金層中,接著強度不會提高。又,每一單位面積之鋅含量超過9000μg/dm2之銅-鋅合金層中,耐化學性(蝕刻液之腐蝕)較差故欠佳。其原因在於含有大量之鋅會導致產生耐蝕性降低之問題。 A copper-zinc alloy layer having a zinc content per unit area of 1000 to 9000 μg/dm 2 is formed on the surface of the copper foil subjected to the following surface treatment as needed. The steps are an important step to increase the strength of the bond. In the copper-zinc alloy layer in which the zinc content per unit area is less than 1000 μg/dm 2 , the strength is not increased. Further, in the copper-zinc alloy layer in which the zinc content per unit area exceeds 9000 μg/dm 2 , the chemical resistance (corrosion of the etching liquid) is poor, which is not preferable. The reason for this is that the presence of a large amount of zinc causes a problem of a decrease in corrosion resistance.

該銅-鋅合金層可藉由電鍍而形成。電鍍中之銅-鋅合金之鋅含量為任意。即,該銅-鋅合金層包括電鍍後鋅向銅箔擴散之層。銅-鋅合金層中每一單位面積之鋅含量為1000~9000μg/dm2即可。其結果,銅-鋅合金層之厚度大致相當於100~1200Å之範圍。 The copper-zinc alloy layer can be formed by electroplating. The zinc content of the copper-zinc alloy in electroplating is arbitrary. That is, the copper-zinc alloy layer includes a layer in which zinc is diffused into the copper foil after electroplating. The zinc content per unit area in the copper-zinc alloy layer may be 1000 to 9000 μg/dm 2 . As a result, the thickness of the copper-zinc alloy layer is approximately equivalent to the range of 100 to 1200 Å.

如此所形成之銅-鋅合金層上,形成由選自氧化鋅、氧化鉻、氧化鎳之中的至少一種成分所構成之具有5Å~100Å之間的厚度之穩定化層。 On the copper-zinc alloy layer thus formed, a stabilizing layer having a thickness of between 5 Å and 100 Å, which is composed of at least one selected from the group consisting of zinc oxide, chromium oxide, and nickel oxide, is formed.

如上所述,該穩定化層雖其效果存在限度,但亦具備使與銅箔之密合性提高之效果。 As described above, although the stabilizing layer has a limit in effect, it also has an effect of improving the adhesion to the copper foil.

氧化鋅、氧化鉻、氧化鎳作為穩定化層均為有效,且其等亦可複合使用。該穩定化層具有防止銅箔氧化腐蝕,且防止銅引起的介電體基材分解,並維持穩定之剝離強度之功能。繼而,通常該穩定化層為5Å~100Å之間之厚度,然而亦可視需要設為100Å以上之厚度,即200~300Å之 厚度。其中,若未滿5Å,則無法發揮作為穩定化層之作用,且接著力亦降低故欠佳。 Zinc oxide, chromium oxide, and nickel oxide are effective as a stabilizing layer, and the like can also be used in combination. The stabilizing layer has a function of preventing oxidative corrosion of the copper foil, preventing decomposition of the dielectric substrate caused by copper, and maintaining stable peel strength. Then, the stabilizing layer is usually between 5Å and 100Å, but it can be set to a thickness of 100Å or more, that is, 200~300Å. thickness. However, if it is less than 5 Å, the function as a stabilizing layer cannot be exerted, and the force is also lowered, which is not preferable.

於如此形成之穩定化層上形成電阻膜層。電阻膜層係根據電路設計而任意決定者。即,電阻材料之種類與膜厚之選擇係考慮到電阻元件之功能而決定,且並無特別限制。 A resistive film layer is formed on the stabilizing layer thus formed. The resistive film layer is arbitrarily determined according to the circuit design. That is, the type of the resistive material and the film thickness are determined in consideration of the function of the resistive element, and are not particularly limited.

作為用作電阻元件之材料之例,例如可列舉釩、鎢、鋯、鉬、鉭、鎳、鉻等材料。如上所述之電阻相對較高之金屬,可分別作為單獨之膜或者作為與其他元素之合金膜而使用。 Examples of the material used as the resistive element include materials such as vanadium, tungsten, zirconium, molybdenum, niobium, nickel, and chromium. The relatively high-resistance metal as described above can be used as a separate film or as an alloy film with other elements.

又,即便為鋁、矽、銅、鐵、銦、鋅、錫等之電阻相對較低之材料,只要藉由將其與其他元素合金化而成為電阻變高之材料,亦當然能夠進行使用。 Further, even a material having a relatively low electric resistance such as aluminum, tantalum, copper, iron, indium, zinc or tin can be used as long as it is alloyed with other elements to form a material having a high electric resistance.

例如NiCr合金、NiCrAlSi合金等之電阻元件係受到矚目之材料。又,亦可使用選自上述元素之氧化物、氮化物、矽化物之群中之材料氧化物、氮化物、矽化物。如上所述,此等材料之選擇係根據電路設計而任意選擇者,故應可被理解為並不限於此等材料。 For example, a resistive element such as a NiCr alloy or a NiCrAlSi alloy is a material of interest. Further, a material oxide, a nitride, or a telluride selected from the group consisting of oxides, nitrides, and tellurides of the above elements may also be used. As noted above, the choice of such materials is arbitrarily chosen in accordance with the circuit design and should be understood to be not limited to such materials.

當形成該電阻膜層時,可使用濺鍍法、真空蒸鍍法、離子束電鍍法等之物理性表面處理方法、及熱解法、氣相反應法等之化學性表面處理法或者電鍍法、無電鍍法等之濕式表面處理法來形成。 When the resistive film layer is formed, a physical surface treatment method such as a sputtering method, a vacuum deposition method, or an ion beam plating method, or a chemical surface treatment method or a plating method such as a pyrolysis method or a gas phase reaction method, or a plating method may be used. It is formed by a wet surface treatment method such as electroless plating.

一般而言,電鍍法具備能夠以低成本進行製造之優點。又,濺鍍法由於膜之厚度均勻且具有等向性,故存在可獲得高品質之電阻元件之優點。 In general, the plating method has an advantage that it can be manufactured at low cost. Further, since the sputtering method has a uniform thickness and an isotropic property, there is an advantage that a high-quality resistive element can be obtained.

該電阻膜層係根據膜之用途而形成者,故此時之附著方法或者鍍敷方法,可說較佳為根據上述電阻膜層之性質進行適當選擇。 Since the resistive film layer is formed depending on the use of the film, it can be said that the adhesion method or the plating method at this time is preferably selected in accordance with the properties of the above-mentioned resistive film layer.

本發明之具備電阻膜層之銅箔係 The copper foil system with a resistive film layer of the present invention

2)可使用箔厚為5~70μm之銅箔,尤佳為5~35μm之銅箔。該銅箔之厚度可根據用途而任意選擇,但亦存在因製造條件而受到限制,故於上述範圍內進行製造較為有效。 2) A copper foil having a foil thickness of 5 to 70 μm, particularly preferably a copper foil of 5 to 35 μm, can be used. The thickness of the copper foil can be arbitrarily selected depending on the use, but it is also limited by the production conditions, and therefore it is effective to manufacture it within the above range.

3)進而,本發明提供一種於電解銅箔之消光面(粗面)或者壓延銅箔經粗化處理之面上形成有電阻層之銅箔。 3) Further, the present invention provides a copper foil in which a resistive layer is formed on a matte side (rough side) of an electrolytic copper foil or a roughened surface of a rolled copper foil.

電解銅箔之消光面上亦可進一步進行附著結塊狀粒子之粗化處理。又,亦可視需要對壓延銅箔進行粗化處理。藉由上述粗化處理,可獲得Rz為0.3~10.0μm之低分布銅箔或者標準分布銅箔等之粗化面。 The matte surface of the electrolytic copper foil may be further subjected to roughening treatment of adhering agglomerated particles. Further, the rolled copper foil may be roughened as needed. By the above-described roughening treatment, a roughened surface of a low-distribution copper foil or a standard distribution copper foil having an Rz of 0.3 to 10.0 μm can be obtained.

藉由使用本發明之內置有電阻膜層之銅箔,而於電路設計時,無需重新單獨形成電阻元件,只要在形成於銅箔上之電阻膜層上,使用氯化銅(Ⅱ)等之蝕刻溶液,使電阻元件外露即可,因此具有可使焊接變得不需要或者大幅省略,從而顯著簡化了封裝步驟之效果。 By using the copper foil with the resistive film layer of the present invention, it is not necessary to separately form the resistive element in the circuit design, as long as copper (II) chloride or the like is used on the resistive film layer formed on the copper foil. The etching solution can be used to expose the resistive element, so that the soldering can be made unnecessary or largely omitted, thereby significantly simplifying the packaging step.

又,減少封裝零件或焊料數量,結果亦有可擴張空間達到小型輕量之優點。藉此可使電路設計之自由度提高。又,藉由如上所述地於銅箔中內置電阻體,而具備改善高 頻區域中之信號特性之效果。 Moreover, the number of package parts or solder is reduced, and as a result, the expandable space is small and lightweight. Thereby, the degree of freedom in circuit design can be improved. Moreover, by incorporating a resistor body in the copper foil as described above, the improvement is high. The effect of signal characteristics in the frequency region.

進而,本發明具有如下優異之效果:可使此種內置有電阻膜層之銅箔中所伴有的缺點即接著力降低得以改善,故具備良好之耐熱性以及耐酸性。 Further, the present invention has an excellent effect of improving the adhesion resistance, which is a disadvantage associated with the copper foil having the resistive film layer, and thus has excellent heat resistance and acid resistance.

圖1表示電解銅箔之製造裝置之概要。該裝置係於收納電解液之電解槽中設置有陰極筒。該陰極筒1可於局部(大致下半部分)浸漬於電解液中之狀態下進行旋轉。 Fig. 1 shows an outline of an apparatus for manufacturing an electrolytic copper foil. The apparatus is provided with a cathode barrel in an electrolytic cell that houses the electrolyte. The cathode can 1 is rotated in a state where a part (substantially lower half) is immersed in an electrolytic solution.

以包圍該陰極筒1之外周下半部分之方式設有不溶性陽極(陽極)2。該陰極筒1與陽極2之間存在固定之間隙3,電解液可流動於其間。該裝置中配置有2片陽極板。 An insoluble anode (anode) 2 is provided so as to surround the lower half of the outer circumference of the cathode can 1 . There is a fixed gap 3 between the cathode barrel 1 and the anode 2, and the electrolyte can flow therebetween. Two anode plates are arranged in the device.

該裝置中,係如以下方式構成:自下方供給電解液,該電解液穿過陰極筒1與陽極2之間隙3,而自陽極2之上緣溢流,進而該電解液進行循環。於陰極筒1與陽極2之間可經由整流器,而於兩者之間維持特定之電壓。 In this apparatus, the electrolyte is supplied from below, and the electrolyte passes through the gap 3 between the cathode can 1 and the anode 2, and overflows from the upper edge of the anode 2, and the electrolyte is circulated. A specific voltage can be maintained between the cathode can 1 and the anode 2 via a rectifier.

隨著陰極筒1之旋轉,自電解液中進行電鍍之銅的厚度會增大,於達至某種厚度以上後,將該生箔4剝離,連續地捲繞。如此製造之生箔可藉由陰極筒1與陽極2之間之距離、所供給之電解液之流速、或者所供給之電量來調整厚度。 As the cathode barrel 1 rotates, the thickness of the copper plated from the electrolytic solution increases, and after reaching a certain thickness or more, the green foil 4 is peeled off and continuously wound. The green foil thus produced can be adjusted in thickness by the distance between the cathode can 1 and the anode 2, the flow rate of the supplied electrolyte, or the amount of electricity supplied.

藉由此種銅箔製造裝置而製造之銅箔中,與陰極筒接觸之面為鏡面(光澤面),而相反側之面為則為存在凸凹之粗面(消光面)。該電解銅箔之厚度可任意選擇。通常 可使用厚度為9μm~35μm之銅箔。 In the copper foil produced by such a copper foil manufacturing apparatus, the surface in contact with the cathode can is a mirror surface (glossy surface), and the surface on the opposite side is a rough surface (matte surface) in which a convex and concave surface exists. The thickness of the electrolytic copper foil can be arbitrarily selected. usually A copper foil having a thickness of 9 μm to 35 μm can be used.

如此製造之銅箔其次經由去除表面氧化物皮膜之淨化步驟,進而進行水之清洗步驟。淨化步驟中,通常使用10~80g/L之硫酸水溶液。 The copper foil thus produced is passed through a purification step of removing the surface oxide film, and further a water washing step. In the purification step, a 10 to 80 g/L aqueous sulfuric acid solution is usually used.

上述說明中已對電解銅箔之製造進行了說明,然而對於壓延銅箔,可對經溶解及鑄造之鑄錠實施退火以及熱軋,進而實施冷軋,來製造成所需厚度之銅箔。壓延銅箔均為光澤面,因此可視需要實施粗化處理。該粗化處理可使用公知之粗化處理。 In the above description, the production of the electrolytic copper foil has been described. However, in the rolled copper foil, the ingot and the cast ingot can be subjected to annealing and hot rolling, and further subjected to cold rolling to produce a copper foil having a desired thickness. Since the rolled copper foil is a glossy surface, the roughening treatment can be performed as needed. This roughening treatment can use a known roughening treatment.

舉粗化處理之一例如下所述。又,該粗化處理亦適用於電解銅箔之光澤面以及消光面(粗面)。 One of the roughening processes is as follows. Further, the roughening treatment is also applicable to the shiny side and the matte side (rough side) of the electrolytic copper foil.

Cu離子濃度:10~30g/L Cu ion concentration: 10~30g/L

硫酸濃度:20~100g/L Sulfuric acid concentration: 20~100g/L

電解液溫度:20~60℃ Electrolyte temperature: 20~60°C

電流密度:5~80A/dm2 Current density: 5~80A/dm 2

處理時間:0.5~30秒 Processing time: 0.5~30 seconds

對如此製造之電解銅箔或者壓延銅箔,進行鋅-銅合金鍍敷處理。該鋅-銅合金鍍敷處理之槽組成與電鍍條件如下所述。 The electrolytic copper foil or the rolled copper foil thus produced is subjected to zinc-copper alloy plating treatment. The groove composition and plating conditions of the zinc-copper alloy plating treatment are as follows.

(鋅-銅合金鍍敷槽組成與處理條件) (Zinc-copper alloy plating bath composition and processing conditions)

槽組成 Slot composition

CuCN:60~120g/L CuCN: 60~120g/L

Zn(CN)2:1~10g/L Zn(CN) 2 : 1~10g/L

NaOH:40~100g/L NaOH: 40~100g/L

Na(CN):10~30g/L Na(CN): 10~30g/L

pH值:10~13 pH: 10~13

槽溫:60~80℃ Tank temperature: 60~80°C

電流密度:100~10000A/dm2 Current density: 100~10000A/dm 2

處理時間:2~60秒 Processing time: 2~60 seconds

藉此,可形成每一單位面積之鋅含量為1000~9000μg/dm2之銅-鋅合金層。上述電鍍為較佳之鋅-銅合金電鍍條件。若可形成每一單位面積之鋅含量為1000~9000μg/dm2之銅-鋅合金層,即可無需限於上述條件。 Thereby, a copper-zinc alloy layer having a zinc content of 1000 to 9000 μg/dm 2 per unit area can be formed. The above plating is a preferred zinc-copper alloy plating condition. If a copper-zinc alloy layer having a zinc content of 1000 to 9000 μg/dm 2 per unit area can be formed, it is not necessary to be limited to the above conditions.

因此,可於銅上進行鍍鋅,繼而使其加熱擴散而形成銅-鋅合金層。又,一般於加壓步驟中會產生熱,因而只要形成鍍鋅,即可藉由加熱擴散而形成銅-鋅合金層,故可利用上述步驟。下述表示較佳之鍍鋅之例。 Therefore, galvanization can be performed on copper, followed by heating and diffusion to form a copper-zinc alloy layer. Further, since heat is generally generated in the pressurizing step, the copper-zinc alloy layer can be formed by heating and diffusion as long as galvanizing is formed, so that the above steps can be utilized. The following shows an example of a preferred galvanizing.

(鍍鋅槽組成與鍍敷條件) (Zinc plating tank composition and plating conditions)

槽組成 Slot composition

ZnSO4.7H2O:50~350g/L ZnSO 4 . 7H 2 O: 50~350g/L

pH值:2.5~4.5 pH: 2.5~4.5

槽溫:40~60℃ Tank temperature: 40~60°C

電流密度:0.05~0.4A/dm2 Current density: 0.05~0.4A/dm 2

處理時間:1~30秒 Processing time: 1~30 seconds

其次,於鋅-銅合金層上形成由選自氧化鋅、氧化鉻、氧化鎳之中的至少一種成分所構成之具有5Å~100Å之間的厚度之穩定化層。 Next, a stabilizing layer having a thickness of between 5 Å and 100 Å, which is composed of at least one selected from the group consisting of zinc oxide, chromium oxide, and nickel oxide, is formed on the zinc-copper alloy layer.

作為一實施形態,可使用含有鋅離子與鉻離子之電解 溶液來形成包覆層。作為電解溶液中之鋅離子源,例如可使用ZnSO4、ZnCO3、ZnCrO4等。作為電解溶液中之鉻離子源,可使用6價鉻鹽或化合物、例如ZnCrO4、CrO3等。 As an embodiment, an electrolytic solution containing zinc ions and chromium ions can be used to form a coating layer. As the source of the zinc ions in the electrolytic solution, for example, ZnSO 4 , ZnCO 3 , ZnCrO 4 or the like can be used. As the chromium ion source in the electrolytic solution, a hexavalent chromium salt or a compound such as ZnCrO 4 , CrO 3 or the like can be used.

電解溶液中之鋅離子濃度可為0.1~2g/L、較佳為0.3~0.6g/L、更佳為0.4~0.5g/L之範圍。又,電解溶液中之鉻離子濃度可為0.3~5g/L、較佳為0.5~約3g/L、更佳為0.5~1.0g/L之範圍。再者,此等條件僅為用以進行有效鍍敷之條件,可視需要亦設置成上述條件之範圍外。 The concentration of zinc ions in the electrolytic solution may be in the range of 0.1 to 2 g/L, preferably 0.3 to 0.6 g/L, more preferably 0.4 to 0.5 g/L. Further, the concentration of chromium ions in the electrolytic solution may be in the range of 0.3 to 5 g/L, preferably 0.5 to 3 g/L, more preferably 0.5 to 1.0 g/L. Moreover, these conditions are only for the conditions for effective plating, and may be set outside the range of the above conditions as needed.

作為其他實施形態,為了形成上述穩定化層,而可包覆氧化鎳與鎳金屬、或者氧化鋅或氧化鉻、或者一併包覆上述物質。作為電解溶液之鎳離子源,可為Ni2SO4、NiCO3等之任一者,或者組合此等者。 In another embodiment, in order to form the stabilizing layer, nickel oxide, nickel metal, zinc oxide or chromium oxide may be coated or the above-mentioned materials may be coated. The nickel ion source as the electrolytic solution may be either Ni 2 SO 4 or NiCO 3 or the like, or a combination thereof.

鎳離子於電解溶液中之濃度較佳為0.2g/L~1.2g/L。進而亦可使用如美國專利5,908,544號中記載之如含磷之穩定化層。再者,此等條件僅為用以有效地形成由選自氧化鋅、氧化鉻、氧化鎳之中的至少一種成分所構成之具有5Å~100Å之間的厚度之穩定化層之條件,亦可視需要設置成上述條件之範圍外。 The concentration of nickel ions in the electrolytic solution is preferably from 0.2 g/L to 1.2 g/L. Further, a stabilizing layer such as phosphorus as described in U.S. Patent No. 5,908,544 may be used. Furthermore, these conditions are only conditions for effectively forming a stabilizing layer composed of at least one component selected from the group consisting of zinc oxide, chromium oxide, and nickel oxide, having a thickness of between 5 Å and 100 Å, and are also visible. It needs to be set outside the range of the above conditions.

電解溶液中可以1~50g/L、較佳為10~20g/L、更佳為12~18g/L之範圍之濃度含有如Na2SO4般其他習知之添加物。理想的是使電解溶液之pH值一般為3~6、較佳為4~5、更佳為4.8~5.0為止之範圍。 The electrolytic solution may contain other conventional additives such as Na 2 SO 4 at a concentration of 1 to 50 g/L, preferably 10 to 20 g/L, more preferably 12 to 18 g/L. It is desirable that the pH of the electrolytic solution is generally in the range of 3 to 6, preferably 4 to 5, more preferably 4.8 to 5.0.

使電解溶液之溫度為20℃~100℃、較佳為25℃~45℃、更佳為26℃~44℃者則較為合適。 The temperature of the electrolytic solution is preferably from 20 ° C to 100 ° C, preferably from 25 ° C to 45 ° C, more preferably from 26 ° C to 44 ° C.

圖2係表示表面處理裝置之概要。圖2所載之符號如下所述。11:原料銅箔(生箔)、12:銅箔、14:光澤側、20:前處理步驟、22:前處理槽、24:下部導輥、26:導輥、30:洗淨槽、32:水洗噴頭、34:洗淨槽、40:安定化步驟、42:電槽、44:下部導輥、46:導輥(陰極輥)、48:陽極、60:乾燥器62:加熱器、72:濺鍍裝置、76:靶、77:氣體導管、100:銅-鋅步驟。 Fig. 2 is a view showing an outline of a surface treatment apparatus. The symbols contained in Figure 2 are as follows. 11: raw material copper foil (raw foil), 12: copper foil, 14: glossy side, 20: pre-treatment step, 22: pre-treatment tank, 24: lower guide roll, 26: guide roll, 30: wash tank, 32 : Washing nozzle, 34: Washing tank, 40: Stabilizing step, 42: Electric trough, 44: Lower guide roller, 46: Guide roller (cathode roller), 48: Anode, 60: Dryer 62: Heater, 72 : Sputtering device, 76: target, 77: gas conduit, 100: copper-zinc step.

如圖2所示,為了對銅箔12賦予電流密度,而鄰接於銅箔12各側,配置陽極48。導輥46為陰極輥,若藉由電源(未圖示)對陽極48施加電壓,則例如由氧化鋅與氧化鉻所構成之穩定化層49將沈積於銅箔12所露出之光澤側14以及消光面16上。 As shown in FIG. 2, in order to apply a current density to the copper foil 12, the anode 48 is arrange|positioned adjacent to each side of the copper foil 12. The guide roller 46 is a cathode roller. When a voltage is applied to the anode 48 by a power source (not shown), a stabilizing layer 49 composed of, for example, zinc oxide and chromium oxide is deposited on the glossy side 14 exposed by the copper foil 12 and On the matte surface 16.

電流密度為1至100A/ft2(約0.108至約10.8A/dm2),較佳為25~50A/ft2(約2.7至約5.4A/dm2)為止之範圍,更佳為30A/ft2(約3.2A/dm2)。當設有多個陽極時,電流密度可於陽極彼此間進行改變。 The current density is in the range of from 1 to 100 A/ft 2 (about 0.108 to about 10.8 A/dm 2 ), preferably from 25 to 50 A/ft 2 (about 2.7 to about 5.4 A/dm 2 ), more preferably 30 A/ Ft 2 (about 3.2A/dm 2 ). When a plurality of anodes are provided, the current density can be varied between the anodes.

合適之鍍敷時間為1~30秒,較佳為5~20秒,更佳為約15秒。特定實施形態中,累計處理時間於光澤側即平滑側上為約3至10秒,於無光澤之側上為約1至5秒。 A suitable plating time is from 1 to 30 seconds, preferably from 5 to 20 seconds, more preferably about 15 seconds. In a particular embodiment, the cumulative processing time is about 3 to 10 seconds on the glossy side, i.e., on the smooth side, and about 1 to 5 seconds on the matte side.

又,作為較佳例,電解溶液中鉻離子相對鋅離子之莫耳比可為0.2~10、較佳為1~5、更佳為約1.4。根據本發明,適於銅箔之穩定化層之厚度可為5Å~100Å。較佳為20Å~50Å。 Further, as a preferred example, the molar ratio of chromium ions to zinc ions in the electrolytic solution may be from 0.2 to 10, preferably from 1 to 5, more preferably about 1.4. According to the present invention, the thickness of the stabilizing layer suitable for the copper foil may be from 5 Å to 100 Å. It is preferably 20 Å to 50 Å.

以上所述之實施形態中,穩定化層由氧化鉻與氧化鋅 所構成,然而亦可僅以氧化鉻構成穩定化層。 In the above embodiment, the stabilizing layer is composed of chromium oxide and zinc oxide. However, it is possible to form a stabilizing layer only with chromium oxide.

用以應用氧化鉻穩定化層之槽之較佳條件如下所述。 Preferred conditions for applying the grooves of the chromium oxide stabilizing layer are as follows.

1~10g/L之CrO3溶液(較佳為5g/L之CrO3) 1~10g/L CrO 3 solution (preferably 5g/L CrO 3 )

pH值:2 pH: 2

槽之溫度:25℃ Temperature of the tank: 25 ° C

5~10秒內為10~30A/ft2(1.08~3.2A/dm2) 10~30A/ft 2 in 5~10 seconds (1.08~3.2A/dm 2 )

浸漬處理:10秒 Dip treatment: 10 seconds

繼形成穩定化層之製程之後,進行清洗。清洗步驟中,例如藉由配置於銅箔上下之噴霧裝置,而對銅箔(具有穩定化層)之面上進行水霧噴射,沖洗該面使其清潔,從而自該面上去除殘留之電解溶液。可藉配置於噴霧噴嘴下方之容器來回收經清洗後之溶液。 After the process of forming the stabilizing layer, cleaning is performed. In the cleaning step, for example, a surface of a copper foil (having a stabilizing layer) is sprayed with water mist by a spray device disposed above and below the copper foil, and the surface is washed and cleaned to remove residual electrolysis from the surface. Solution. The cleaned solution can be recovered by a container disposed below the spray nozzle.

對上表面具有穩定化層之銅箔進一步進行乾燥。如實施形態所示,將強制空氣乾燥器配置於銅箔上下,自該強制空氣乾燥器中噴出空氣而使銅箔表面乾燥。 The copper foil having a stabilizing layer on the upper surface is further dried. As shown in the embodiment, the forced air dryer is placed above and below the copper foil, and air is ejected from the forced air dryer to dry the surface of the copper foil.

於形成有穩定化層之銅箔上,進一步形成由電阻材料所構成之層。作為該電阻層之例,例如可列舉NiCr合金、NiCrAlSi合金等之電阻元件。由該電阻材料所構成之層係來自電路基板設計之要求,其可任意進行選擇。因此,無需限定於特定材料。 On the copper foil on which the stabilizing layer is formed, a layer composed of a resistive material is further formed. Examples of the resistance layer include a resistive element such as a NiCr alloy or a NiCrAlSi alloy. The layer composed of the resistive material comes from the requirements of the circuit board design, and can be arbitrarily selected. Therefore, it is not necessary to be limited to a specific material.

又,為了提高與基材(底部材料)之密合性,可視需要於電阻層之上實施各種矽烷處理。然而,該矽烷處理為任意的,本發明並不限定於此。 Further, in order to improve the adhesion to the substrate (bottom material), various decane treatments may be performed on the resistive layer as needed. However, the decane treatment is arbitrary, and the present invention is not limited thereto.

[實施例] [Examples]

其次,說明實施例。再者,以下之實施例係為了使本申請案發明易於理解而寫成,但並不限於此。即,基於本申請案發明之技術思想之變形、實施態樣、其他例,均包括於本發明中。 Next, an embodiment will be described. Furthermore, the following examples are written to make the invention of the present application easy to understand, but are not limited thereto. That is, the modifications, the embodiments, and other examples based on the technical idea of the invention of the present application are included in the present invention.

(實施例1) (Example 1)

本實施例中,使用厚度為18μm之電鍍銅箔。於該電解銅箔之粗面(消光面)側形成有銅-鋅合金層。 In this embodiment, an electroplated copper foil having a thickness of 18 μm was used. A copper-zinc alloy layer was formed on the rough side (matte side) side of the electrolytic copper foil.

該銅-鋅合金層係於以下處理條件下進行實施,而形成每一單位面積之鋅含量為約3500μg/dm2(後2位數經四捨五入)之銅-鋅合金層。包覆量藉由處理時間來調節。 The copper-zinc alloy layer was subjected to the following treatment conditions to form a copper-zinc alloy layer having a zinc content per unit area of about 3500 μg/dm 2 (the latter 2 digits were rounded off). The amount of coating is adjusted by the processing time.

(銅-鋅合金鍍敷之槽組成與鍍敷條件) (Slot composition and plating conditions of copper-zinc alloy plating)

槽組成 Slot composition

CuCN:90g/L CuCN: 90g/L

Zn(CN)2:5g/L Zn(CN) 2 : 5g/L

NaOH:70g/L NaOH: 70g / L

Na(CN):20g/L Na(CN): 20g/L

槽溫:70℃ Tank temperature: 70 ° C

電流密度:500A/dm2 Current density: 500A/dm 2

處理時間:5~20秒 Processing time: 5~20 seconds

其次,於以下處理條件下,於銅-鋅合金層上形成約50Å之由氧化鋅-氧化鉻所構成之穩定化層。 Next, about 50 Å of a stabilizing layer composed of zinc oxide-chromium oxide was formed on the copper-zinc alloy layer under the following treatment conditions.

(穩定化處理之槽組成與處理條件) (Stabilization treatment tank composition and processing conditions)

槽組成 Slot composition

作為ZnSO4之鋅:0.53g/L As zinc of ZnSO 4 : 0.53g / L

作為CrO3之鉻:0.6g/L Chromium as CrO 3 : 0.6g/L

Na2SO4:11g/L Na 2 SO 4 : 11g/L

槽之pH值:5.0 The pH of the tank: 5.0

槽之溫度:42℃ Tank temperature: 42 ° C

電流密度:0.85~1.6A/dm2 Current density: 0.85~1.6A/dm 2

鍍敷時間:3~4秒 Plating time: 3~4 seconds

其次,於下述條件下,使由80%之鎳(Ni)與20%之鉻(Cr)所構成之合金之電阻材料附著於上述穩定化層上。 Next, a resistive material of an alloy composed of 80% nickel (Ni) and 20% chromium (Cr) was attached to the above-mentioned stabilizing layer under the following conditions.

Ni/Cr合金濺鍍: Ni/Cr alloy sputtering:

14英吋之濺鍍裝置 14-inch sputtering device

功率:5~8kw Power: 5~8kw

線性速度:1.4~2.2ft/min(0.43~0.67m/min) Linear speed: 1.4~2.2ft/min (0.43~0.67m/min)

Ni/Cr合金之厚度:約100Å,再者,該電阻材料之薄片電阻率為約160Ω/平方。 The thickness of the Ni/Cr alloy is about 100 Å, and further, the resistive material has a sheet resistivity of about 160 Ω/square.

對包覆以上銅箔之包覆層,分析常態剝離值、焊料處理後之剝離值(耐熱性)、鹽酸處理後之剝離值(耐鹽酸性)。 The coating layer coated with the above copper foil was analyzed for the normal peeling value, the peeling value after the solder treatment (heat resistance), and the peeling value (hydrochloric acid resistance) after the hydrochloric acid treatment.

再者,焊料處理後之剝離值,係於260℃之熔融焊料槽中浸漬20秒(即接受加熱處理後之狀態)後測定之剝離值,即焊料處理後之剝離值係表示該處理(受到熱影響)之後之剝離值。該值用以評價耐熱性。 Further, the peeling value after the solder treatment is a peeling value measured after immersing in a molten solder bath at 260 ° C for 20 seconds (that is, a state after receiving the heat treatment), that is, a peeling value after the soldering treatment means that the treatment is Peel value after heat impact). This value is used to evaluate heat resistance.

又,鹽酸處理後之剝離值,係表示使用18wt%之鹽酸,於室溫下浸漬1小時之後之剝離值。即,鹽酸處理後之剝離值係評價耐鹽酸性。以下相同。 Further, the peeling value after the hydrochloric acid treatment is a peeling value after immersion at room temperature for 1 hour using 18% by weight of hydrochloric acid. That is, the peeling value after the hydrochloric acid treatment was evaluated for hydrochloric acid resistance. The same is true below.

以上結果,常態剝離值為0.81kg/cm,焊料處理後之剝離值(耐熱性)為0.77kg/cm,進而鹽酸處理後之剝離值(耐鹽酸性)為0.70kg/cm,焊料處理後以及鹽酸處理後劣化較少,且均顯示良好之性質。 As a result, the normal peeling value was 0.81 kg/cm, the peeling value (heat resistance) after the solder treatment was 0.77 kg/cm, and the peeling value (hydrochloric acid resistance) after the hydrochloric acid treatment was 0.70 kg/cm, after the solder treatment and The hydrochloric acid treatment showed less deterioration and showed good properties.

(實施例2~11)[鋅含量] (Examples 2 to 11) [Zinc content]

其次,將顯示良好特性之實施例1之條件作為基本,形成將每一單位面積之鋅含量改變後(1000~9000μg/dm2)之銅-鋅合金層。同樣地2位數以下進行四捨五入。銅-鋅合金層之鋅含量以外的處理條件與實施例1相同。包覆量藉由處理時間來調節。其結果示於表1。 Next, as a basic condition of Example 1 showing good characteristics, a copper-zinc alloy layer in which the zinc content per unit area was changed (1000 to 9000 μg/dm 2 ) was formed. Similarly, rounding down is performed under 2 digits. The treatment conditions other than the zinc content of the copper-zinc alloy layer were the same as in Example 1. The amount of coating is adjusted by the processing time. The results are shown in Table 1.

再者,作為比較,將形成有本發明之條件外的鋅含量之銅-鋅合金層表示為比較例1以及比較例2。 Further, for comparison, a copper-zinc alloy layer in which a zinc content other than the conditions of the present invention was formed was shown as Comparative Example 1 and Comparative Example 2.

自表1可知,於銅-鋅合金層中之鋅含量為約3500μg/dm2(2位數以下經四捨五入)之情形時(實施例1),常態剝離強度、耐熱性、耐鹽酸性良好,顯示獲得平衡之性質。 It can be seen from Table 1 that when the zinc content in the copper-zinc alloy layer is about 3500 μg/dm 2 (two digits or less is rounded off) (Example 1), the normal peel strength, heat resistance, and hydrochloric acid resistance are good. Shows the nature of getting balanced.

相對於此,隨著每一單位面積之鋅含量之增加,常態剝離強度與耐熱性雖會升高,但顯示出耐鹽酸性降低之傾向。相反地,隨著每一單位面積之鋅含量之減少,耐鹽酸性雖會升高,但顯示出常態剝離強度與耐熱性降低之傾向。 On the other hand, as the zinc content per unit area increases, the normal peel strength and the heat resistance increase, but the hydrochloric acid resistance tends to decrease. On the contrary, as the zinc content per unit area is reduced, the hydrochloric acid resistance is increased, but the tendency of normal peel strength and heat resistance is lowered.

比較例1中可知因鋅含量較少,故常態剝離強度、耐熱性、耐鹽酸性之任一者均較低,又比較例2中,可知因鋅含量過多,故常態剝離強度、耐熱性雖較高,但耐鹽酸性差,且均超過可容許之極限,因而不適於實用。如上所述,可知為了使常態剝離強度、耐熱性、耐鹽酸性提高,銅-鋅合金層之存在極其有效。 In Comparative Example 1, it was found that the normal peel strength, the heat resistance, and the hydrochloric acid resistance were both low due to the small zinc content, and in Comparative Example 2, it was found that the normal peel strength and the heat resistance were observed although the zinc content was too large. It is higher, but it is poor in hydrochloric acid resistance and exceeds the allowable limit, so it is not suitable for practical use. As described above, it is understood that the presence of the copper-zinc alloy layer is extremely effective in order to improve the normal peel strength, heat resistance, and hydrochloric acid resistance.

(實施例1~實施例1-4)[銅箔之厚度] (Example 1 to Example 1-4) [Thickness of Copper Foil]

其次,將顯示出良好特性之實施例1之條件作為基本,對銅箔厚度改變後之情形時的常態剝離強度、耐熱性、耐鹽酸性加以分析。除了銅箔厚度改變之外,其他與實施例1相同。包覆量藉由處理時間來調節。其結果示於表2。 Next, the conditions of Example 1 showing good characteristics were used as basic, and the normal peel strength, heat resistance, and hydrochloric acid resistance in the case where the thickness of the copper foil was changed were analyzed. The same as Example 1 except that the thickness of the copper foil was changed. The amount of coating is adjusted by the processing time. The results are shown in Table 2.

於實施例1之情形時,以厚度為18μm之電解銅箔進行實施,但於9μm~35μm之範圍內進行更改而實施之情形時,常態剝離強度對應箔厚而變化較大。即隨著銅箔厚 度之增加,剝離強度亦會增加。 In the case of Example 1, the electrolytic copper foil having a thickness of 18 μm was used, but when the modification was carried out in the range of 9 μm to 35 μm, the normal peel strength greatly changed depending on the thickness of the foil. That is, as the copper foil is thick As the degree increases, the peel strength also increases.

然而,焊料處理後之剝離值之劣化率以及鹽酸處理後之剝離劣化率並未相應產生較大變化。因此,自處理後之劣化率之觀點來考慮,可知焊料處理後之剝離強度以及鹽酸處理後之剝離強度不會因銅箔之厚度而受到較大影響。其結果示於表2。一般可認為銅箔之厚度增加會導致剝離強度增加。 However, the deterioration rate of the peeling value after the solder treatment and the peeling deterioration rate after the hydrochloric acid treatment did not correspondingly change greatly. Therefore, from the viewpoint of the deterioration rate after the treatment, it is understood that the peel strength after the solder treatment and the peel strength after the hydrochloric acid treatment are not greatly affected by the thickness of the copper foil. The results are shown in Table 2. It is generally believed that an increase in the thickness of the copper foil results in an increase in peel strength.

(實施例12)[矽烷處理] (Example 12) [Chane treatment]

本實施例中,使用厚度為18μm、35μm之電鍍銅箔,並且直接使用該電解銅箔之粗面之情形時以及於經粗化處理之面上,於與實施例1相同之條件下,即使用銅-鋅合金鍍敷槽,且於與實施例1相同之鍍敷條件下,形成銅-鋅合金鍍敷層。 In the present embodiment, an electroplated copper foil having a thickness of 18 μm and 35 μm is used, and when the rough surface of the electrolytic copper foil is directly used and on the roughened surface, under the same conditions as in the first embodiment, A copper-zinc alloy plating bath was used, and under the same plating conditions as in Example 1, a copper-zinc alloy plating layer was formed.

再者,上述粗化處理之條件如下所述。 Furthermore, the conditions of the above roughening treatment are as follows.

Cu離子濃度:20g/L Cu ion concentration: 20g / L

硫酸濃度:60g/L Sulfuric acid concentration: 60g/L

電解液溫度:40℃ Electrolyte temperature: 40 ° C

電流密度:30A/dm2 Current density: 30A/dm 2

處理時間:5秒 Processing time: 5 seconds

藉由上述,形成每一單位面積之鋅含量為約3500mg/m2(後2位數經四捨五入)之銅-鋅合金層。其次,於該銅-鋅合金層上,以與實施例1相同之方式,形成Cr-Zn氧化物之穩定化層。 By the above, a copper-zinc alloy layer having a zinc content per unit area of about 3500 mg/m 2 (the latter 2 digits rounded off) was formed. Next, a stabilizing layer of Cr-Zn oxide was formed on the copper-zinc alloy layer in the same manner as in Example 1.

進而,於該Cr-Zn氧化物之穩定化層上,藉由濺鍍形成由80%之鎳(Ni)與20%之鉻(Cr)所構成之合金之電阻材料。其條件亦與實施例1相同。 Further, a resistive material of an alloy composed of 80% of nickel (Ni) and 20% of chromium (Cr) was formed by sputtering on the stabilized layer of the Cr-Zn oxide. The conditions are also the same as in the first embodiment.

其次,於電阻層上,實施矽烷處理(TEOS:Tetraethoxysilane,四乙氧基矽烷)。其結果示於表3。如該表3所示,可知常態剝離強度升高,故矽烷處理為有效。 Next, on the resistive layer, decane treatment (TEOS: Tetraethoxysilane, tetraethoxydecane) was carried out. The results are shown in Table 3. As shown in Table 3, it is understood that the normal peel strength is increased, so that the decane treatment is effective.

(實施例13)[Cr電阻膜] (Example 13) [Cr resistance film]

於上述實施例1之條件下,形成每一單位面積之鋅含量為約3500μg/dm2(後2位數經四捨五入)之銅-鋅合金層,並於該Cu-Zn合金層上形成Cr-Zn氧化物之穩定化層。 Under the conditions of the above Example 1, a copper-zinc alloy layer having a zinc content per unit area of about 3500 μg/dm 2 (the last 2 digits were rounded off) was formed, and Cr- was formed on the Cu-Zn alloy layer. A stabilizing layer of Zn oxide.

其次,於該Cr-Zn氧化物之穩定化層上藉由濺鍍形成鉻電阻膜。 Next, a chrome resistive film is formed by sputtering on the stabilized layer of the Cr-Zn oxide.

鉻濺鍍之條件如下所述。 The conditions for chrome sputtering are as follows.

使用14英吋之濺鍍裝置。 Use a 14-inch sputtering device.

功率:5~8kw Power: 5~8kw

線性速度:1.8~2.8ft/min(0.55~0.85m/min) Linear speed: 1.8~2.8ft/min (0.55~0.85m/min)

鉻之厚度:100Å、1000Å、1200Å、2000Å、3000Å、4000Å共6種 Thickness of chrome: 6 kinds of 100Å, 1000Å, 1200Å, 2000Å, 3000Å, 4000Å

本實施例13中,對常態剝離強度、耐熱性、耐鹽酸性進行分析,因與實施例1相同,故雖不示於表中,但均顯示出良好之性質。由以上可知與電阻層之種類以及厚度並無關聯,銅-鋅合金層之形成均為有效。 In the present Example 13, the normal peel strength, the heat resistance, and the hydrochloric acid resistance were analyzed. Since they were the same as in Example 1, they were not shown in the table, but all showed good properties. From the above, it is understood that the type and thickness of the resistance layer are not related, and the formation of the copper-zinc alloy layer is effective.

(實施例14~實施例14-4)[Ni/Cr/Al/Si合金電阻膜]於上述實施例1之條件下,形成每一單位面積之鋅含量為約3500μg/dm2(後2位數經四捨五入)之銅-鋅合金層,並於該銅-鋅合金層上形成鉻-鋅氧化物之穩定化層。 (Example 14 to Example 14-4) [Ni/Cr/Al/Si alloy resistive film] Under the conditions of the above Example 1, the zinc content per unit area was formed to be about 3500 μg/dm 2 (last 2 positions) The copper-zinc alloy layer is rounded off and a chromium-zinc oxide stabilizing layer is formed on the copper-zinc alloy layer.

其次,於下述條件下,使由56%之鎳(Ni)、38%之鉻(Cr)以及作為摻雜劑之由4%之鋁(Al)與2%之矽(Si)所構成之合金附著於該鉻-鋅氧化物之穩定化層上。 Next, it consists of 56% nickel (Ni), 38% chromium (Cr), and 4% aluminum (Al) and 2% germanium (Si) as dopants under the following conditions. The alloy is attached to the stabilizing layer of the chromium-zinc oxide.

Ni/Cr/Al/Si合金濺鍍: Ni/Cr/Al/Si alloy sputtering:

14英吋之濺鍍裝置 14-inch sputtering device

功率:0.85~2.3kw Power: 0.85~2.3kw

線性速度:0.49ft/min(0.15m/min) Linear speed: 0.49 ft / min (0.15 m / min)

薄片電阻率:約90~300Ω/平方 Sheet resistivity: about 90~300Ω/square

本實施例14~實施例14-4中,形成表4所示之薄片電阻之膜。對此時之常態剝離強度、耐熱性、耐鹽酸性進行分析,與實施例1相同,且如表4所示,均顯示出良好之性質。由以上可知,其與Ni/Cr/Al/Si合金電阻層並無關聯,銅-鋅合金層之形成為有效。 In the present Example 14 to Example 14-4, the film of the sheet resistance shown in Table 4 was formed. The normal peel strength, heat resistance, and hydrochloric acid resistance at this time were analyzed, and the same as in Example 1, and as shown in Table 4, all showed good properties. From the above, it is known that it is not related to the Ni/Cr/Al/Si alloy resistance layer, and the formation of the copper-zinc alloy layer is effective.

(實施例15~實施例15-4)[壓延銅箔] (Example 15 to Example 15-4) [rolled copper foil]

本實施例中,使用9μm、12μm、18μm、35μm之壓延銅箔。於以下條件下對該壓延銅箔實施粗化處理。 In this embodiment, a rolled copper foil of 9 μm, 12 μm, 18 μm, and 35 μm was used. The rolled copper foil was subjected to a roughening treatment under the following conditions.

Cu離子濃度:20g/L Cu ion concentration: 20g / L

硫酸濃度:60g/L Sulfuric acid concentration: 60g/L

電解液溫度:40℃ Electrolyte temperature: 40 ° C

電流密度:30A/dm2 Current density: 30A/dm 2

處理時間:5秒 Processing time: 5 seconds

其次,於下述條件下於該經粗化處理之壓延銅箔上形成3500μg/dm2之鍍Zn層。鍍鋅之厚度由處理時間進行調節。 Next, a Zn plating layer of 3500 μg/dm 2 was formed on the roughened rolled copper foil under the following conditions. The thickness of the galvanizing is adjusted by the processing time.

鍍鋅槽組成: Galvanized tank composition:

ZnSO4.7H2O:50~350g/L ZnSO 4 . 7H 2 O: 50~350g/L

pH值:3 pH: 3

槽溫:50℃ Tank temperature: 50 ° C

電流密度:0.2A/dm2 Current density: 0.2A/dm 2

處理時間:2~3秒 Processing time: 2~3 seconds

於300℃下對該形成有處理層之銅箔進行加熱處理,形成銅-鋅之合金層。如此形成之銅-鋅合金層之每一單位面積之鋅含量為約3500μg/dm2(後2位數經四捨五入)。 The copper foil on which the treated layer was formed was heat-treated at 300 ° C to form a copper-zinc alloy layer. The zinc content per unit area of the thus formed copper-zinc alloy layer was about 3500 μg/dm 2 (the last 2 digits were rounded off).

其次,於以下處理條件下,於銅-鋅合金層上形成約50Å之由氧化鋅-氧化鉻所構成之穩定化層。 Next, about 50 Å of a stabilizing layer composed of zinc oxide-chromium oxide was formed on the copper-zinc alloy layer under the following treatment conditions.

穩定化處理: Stabilization:

作為ZnSO4之鋅:0.53g/L As zinc of ZnSO 4 : 0.53g / L

作為CrO3之鉻:0.6g/L Chromium as CrO 3 : 0.6g/L

Na2SO4:11g/L Na 2 SO 4 : 11g/L

槽之pH值:5.0 The pH of the tank: 5.0

槽之溫度:42℃ Tank temperature: 42 ° C

電流密度:0.85~1.6A/dm2 Current density: 0.85~1.6A/dm 2

鍍敷時間:3~4秒 Plating time: 3~4 seconds

其次,於下述條件下,使由80%之鎳(Ni)與20%之鉻(Cr)所構成之合金之電阻材料附著於上述穩定化層上。 Next, a resistive material of an alloy composed of 80% nickel (Ni) and 20% chromium (Cr) was attached to the above-mentioned stabilizing layer under the following conditions.

Ni/Cr合金濺鍍: Ni/Cr alloy sputtering:

14英吋之濺鍍裝置 14-inch sputtering device

功率:5~8kw Power: 5~8kw

線性速度:1.4~2.2ft/min(0.43~0.67m/min) Linear speed: 1.4~2.2ft/min (0.43~0.67m/min)

Ni/Cr合金之厚度:約100Å,再者,該電阻材料之薄片電阻率為約160Ω/平方。 The thickness of the Ni/Cr alloy is about 100 Å, and further, the resistive material has a sheet resistivity of about 160 Ω/square.

對包覆以上銅箔之包覆層,分析常態剝離強度、耐熱性(焊料處理後之剝離強度)、耐鹽酸性(鹽酸處理後之剝離強度)。其結果示於表5。如該表5所示,常態剝離強度為0.64~1.22kg/cm,焊料浸漬後之剝離強度為0.60~1.16kg/cm,進而18wt%之鹽酸浸漬後之剝離強度為0.53~1.09kg/cm,均顯示出良好之性質。 The coating layer coated with the above copper foil was analyzed for normal peel strength, heat resistance (peel strength after solder treatment), and hydrochloric acid resistance (peel strength after hydrochloric acid treatment). The results are shown in Table 5. As shown in Table 5, the normal peel strength is 0.64 to 1.22 kg/cm, the peel strength after solder immersion is 0.60 to 1.16 kg/cm, and the peel strength after immersion of 18 wt% hydrochloric acid is 0.53 to 1.09 kg/cm. Both show good properties.

又,以與上述實施例2~11相同之方式,進行Cu-Zn合金層之厚度經更改後之試驗,而其結果相同。因此,可知電解銅箔以及壓延銅箔形成每一單位面積之鋅含量均為1000~9000μg/dm2之銅-鋅合金層可使接著力提高(常態剝離強度增加),且對耐熱性以及耐酸性有效。 Further, in the same manner as in the above Examples 2 to 11, the thickness of the Cu-Zn alloy layer was changed and the results were the same. Therefore, it is understood that the electrolytic copper foil and the rolled copper foil form a copper-zinc alloy layer having a zinc content of 1000 to 9000 μg/dm 2 per unit area, which can improve the adhesion (increased normal peel strength), and is resistant to heat and acid. Sexually effective.

[產業上之可利用性] [Industrial availability]

本發明藉由使用內置有電阻膜層之銅箔,而於電路設計時,無需重新單獨形成電阻元件,只要在形成於銅箔中之電阻膜層上,使用氯化銅(Ⅱ)等之蝕刻溶液,使電阻元件露出即可,因此具有可使焊接省去或者大幅省略,從而顯著簡化了封裝步驟,由於顯著減少電路設計以及製作步驟,且於銅箔中內置電阻體,故具有改善高頻區域中之信號特性之效果。進而,本發明具有可使如此內置有電阻膜層之銅箔所伴有的缺點即接著力降低得以改善、且具有良好之耐熱性以及耐酸性之優異效果,因此利於用作印刷電路基板。 In the present invention, by using a copper foil having a resistive film layer built therein, it is not necessary to separately form a resistive element in circuit design, and etching using copper (II) chloride or the like is performed on the resistive film layer formed in the copper foil. The solution can expose the resistive element, so that the solder can be omitted or largely omitted, thereby significantly simplifying the packaging step, and the high frequency is improved by significantly reducing the circuit design and the manufacturing steps, and the built-in resistor body in the copper foil. The effect of the signal characteristics in the area. Further, the present invention has an advantage that the copper foil having the resistive film layer described above can be improved, that is, the adhesion is reduced, and the heat resistance and the acid resistance are excellent. Therefore, the present invention is useful as a printed circuit board.

1‧‧‧陰極滾筒 1‧‧‧cathode roller

2‧‧‧陽極(不溶性陽極) 2‧‧‧Anode (insoluble anode)

3‧‧‧間隙 3‧‧‧ gap

4‧‧‧生箔 4‧‧‧ Raw foil

11‧‧‧原料銅箔(生箔) 11‧‧‧Material copper foil (raw foil)

12‧‧‧銅箔 12‧‧‧ copper foil

14‧‧‧光澤側 14‧‧‧Gloss side

20‧‧‧前處理步驟 20‧‧‧Pre-processing steps

22‧‧‧前處理槽 22‧‧‧Pre-treatment tank

24‧‧‧下部導輥 24‧‧‧ lower guide roller

26‧‧‧導輥 26‧‧‧guide roller

30‧‧‧洗淨槽 30‧‧‧cleaning trough

32‧‧‧水洗噴頭 32‧‧‧Washing nozzle

34‧‧‧洗淨槽 34‧‧‧cleaning trough

40‧‧‧安定化步驟 40‧‧‧Safety steps

42‧‧‧電槽 42‧‧‧Electric trough

44‧‧‧下部導輥 44‧‧‧ lower guide roller

46‧‧‧導輥(陰極輥) 46‧‧‧guide roller (cathode roller)

48‧‧‧陽極 48‧‧‧Anode

60‧‧‧乾燥器 60‧‧‧Dryer

62‧‧‧加熱器 62‧‧‧heater

72‧‧‧濺鍍裝置 72‧‧‧ Sputtering device

76‧‧‧靶 76‧‧‧ target

77‧‧‧氣體導管 77‧‧‧ gas conduit

100‧‧‧銅-鋅步驟 100‧‧‧ copper-zinc step

圖1係表示電解銅箔製造裝置之概要之圖。 Fig. 1 is a view showing an outline of an apparatus for manufacturing an electrolytic copper foil.

圖2係表示表面處理裝置之概要之圖。 Fig. 2 is a view showing an outline of a surface treatment apparatus.

12‧‧‧銅箔 12‧‧‧ copper foil

14‧‧‧光澤側 14‧‧‧Gloss side

46‧‧‧導輥(陰極輥) 46‧‧‧guide roller (cathode roller)

48‧‧‧陽極 48‧‧‧Anode

Claims (3)

一種具備電阻膜層之銅箔,其特徵在於:於銅箔之粗化面或光澤面上具備每一單位面積之鋅含量為1000~9000μg/dm2之銅-鋅合金層,於該銅-鋅合金層上形成有由選自氧化鋅、氧化鉻、氧化鎳之中的至少一種成分所構成之具有5Å~100Å之間的厚度之穩定化層,於該穩定化層上具備有由電阻材料所構成之膜層。 A copper foil having a resistive film layer, characterized in that a copper-zinc alloy layer having a zinc content per unit area of 1000 to 9000 μg/dm 2 is provided on the roughened surface or the shiny surface of the copper foil, in the copper- a stabilizing layer having a thickness of between 5 Å and 100 Å, which is composed of at least one selected from the group consisting of zinc oxide, chromium oxide, and nickel oxide, is formed on the zinc alloy layer, and the resistive layer is provided with a resistive material. The film layer formed. 如申請專利範圍第1項之具備電阻膜層之銅箔,其中銅箔之箔厚為5~35μm。 A copper foil having a resistive film layer as in the first aspect of the patent application, wherein the copper foil has a foil thickness of 5 to 35 μm. 如申請專利範圍第1項或第2項之具備電阻膜層之銅箔,其中於電解銅箔之消光面或者壓延銅箔經粗化處理之面側,形成有電阻層。 A copper foil having a resistive film layer according to claim 1 or 2, wherein a resistive layer is formed on the matte side of the electrolytic copper foil or the roughened side of the rolled copper foil.
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