TW200926326A - Two-dimensional uniformity correction for ion beam assisted etching - Google Patents

Two-dimensional uniformity correction for ion beam assisted etching Download PDF

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Publication number
TW200926326A
TW200926326A TW97136526A TW97136526A TW200926326A TW 200926326 A TW200926326 A TW 200926326A TW 97136526 A TW97136526 A TW 97136526A TW 97136526 A TW97136526 A TW 97136526A TW 200926326 A TW200926326 A TW 200926326A
Authority
TW
Taiwan
Prior art keywords
ion beam
substrate
ion
layout
etching
Prior art date
Application number
TW97136526A
Other languages
English (en)
Chinese (zh)
Inventor
Steven R Walther
Peter D Nunan
Yuri Erokhin
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200926326A publication Critical patent/TW200926326A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
TW97136526A 2007-09-28 2008-09-23 Two-dimensional uniformity correction for ion beam assisted etching TW200926326A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86392107A 2007-09-28 2007-09-28

Publications (1)

Publication Number Publication Date
TW200926326A true TW200926326A (en) 2009-06-16

Family

ID=40526609

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97136526A TW200926326A (en) 2007-09-28 2008-09-23 Two-dimensional uniformity correction for ion beam assisted etching

Country Status (2)

Country Link
TW (1) TW200926326A (fr)
WO (1) WO2009045722A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097584A (zh) * 2014-05-15 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种离子注入剂量的检测方法
CN105575795A (zh) * 2014-10-21 2016-05-11 朗姆研究公司 利用离子束刻蚀产生环栅结构
CN107004591A (zh) * 2015-10-02 2017-08-01 佳能安内华股份有限公司 离子束蚀刻方法和离子束蚀刻设备
US10580628B2 (en) 2014-08-12 2020-03-03 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
CN112490154A (zh) * 2020-11-27 2021-03-12 上海华力集成电路制造有限公司 刻蚀量监控方法及监控模块
US11062920B2 (en) 2014-08-29 2021-07-13 Lam Research Corporation Ion injector and lens system for ion beam milling
CN113885440A (zh) * 2021-08-10 2022-01-04 上海哥瑞利软件股份有限公司 一种针对离子植入机的进阶智能设备控制系统
US11289306B2 (en) 2016-02-25 2022-03-29 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
TWI827743B (zh) * 2018-12-13 2024-01-01 美商艾克塞利斯科技公司 離子植入系統及用於提供掃描帶狀離子束的非均勻通量之方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11227741B2 (en) 2018-05-03 2022-01-18 Plasma-Therm Nes Llc Scanning ion beam etch
CN110686817B (zh) * 2019-10-31 2020-06-23 电子科技大学 一种粒子束发射角的测量装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
JP4820038B2 (ja) * 1999-12-13 2011-11-24 セメクイップ， インコーポレイテッド イオン注入イオン源、システム、および方法
US7176470B1 (en) * 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097584A (zh) * 2014-05-15 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种离子注入剂量的检测方法
US10580628B2 (en) 2014-08-12 2020-03-03 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US11062920B2 (en) 2014-08-29 2021-07-13 Lam Research Corporation Ion injector and lens system for ion beam milling
US10998167B2 (en) 2014-08-29 2021-05-04 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
CN105575795A (zh) * 2014-10-21 2016-05-11 朗姆研究公司 利用离子束刻蚀产生环栅结构
CN105575795B (zh) * 2014-10-21 2019-02-19 朗姆研究公司 利用离子束刻蚀产生环栅结构
US10483085B2 (en) 2014-10-21 2019-11-19 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
TWI630605B (zh) * 2015-10-02 2018-07-21 佳能安內華股份有限公司 Ion beam etching method and ion beam etching device
CN107004591B (zh) * 2015-10-02 2020-05-01 佳能安内华股份有限公司 离子束蚀刻方法和离子束蚀刻设备
CN107004591A (zh) * 2015-10-02 2017-08-01 佳能安内华股份有限公司 离子束蚀刻方法和离子束蚀刻设备
US11289306B2 (en) 2016-02-25 2022-03-29 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
TWI827743B (zh) * 2018-12-13 2024-01-01 美商艾克塞利斯科技公司 離子植入系統及用於提供掃描帶狀離子束的非均勻通量之方法
CN112490154A (zh) * 2020-11-27 2021-03-12 上海华力集成电路制造有限公司 刻蚀量监控方法及监控模块
CN113885440A (zh) * 2021-08-10 2022-01-04 上海哥瑞利软件股份有限公司 一种针对离子植入机的进阶智能设备控制系统

Also Published As

Publication number Publication date
WO2009045722A1 (fr) 2009-04-09

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