WO2009045722A1 - Correction d'uniformité bidimensionnelle pour gravure assistée par faisceau ionique - Google Patents

Correction d'uniformité bidimensionnelle pour gravure assistée par faisceau ionique Download PDF

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Publication number
WO2009045722A1
WO2009045722A1 PCT/US2008/076644 US2008076644W WO2009045722A1 WO 2009045722 A1 WO2009045722 A1 WO 2009045722A1 US 2008076644 W US2008076644 W US 2008076644W WO 2009045722 A1 WO2009045722 A1 WO 2009045722A1
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WIPO (PCT)
Prior art keywords
ion beam
etching
ion
substrate
map
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Application number
PCT/US2008/076644
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English (en)
Inventor
Steven R. Walther
Peter D. Nunan
Yuri Erokhin
Original Assignee
Varian Semiconductor Equipment Associates, Inc.
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Publication date
Application filed by Varian Semiconductor Equipment Associates, Inc. filed Critical Varian Semiconductor Equipment Associates, Inc.
Publication of WO2009045722A1 publication Critical patent/WO2009045722A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • This disclosure relates generally to etching with either plasma or energetic ions, and more specifically to using two-dimensional uniformity correction to generate uniform patterns and/or desired non-uniform etch patterns on a substrate undergoing ion beam assisted etching.
  • substrates undergoing an ion beam etch will have a significant amount of non-uniformity that manifests itself in the electrical performance of the devices fabricated on the subtrates.
  • the method comprises: retrieving an ion implant dose map containing a correlation between implant dose rate and etch rate; obtaining a recipe that contains values for ion beam parameters used in the ion beam etching of the substrate; directing an ion beam at a surface of the substrate; etching the surface with the ion beam according to the ion implant dose map and the values of the ion beam parameters in the recipe; and controlling the etching of the surface in accordance with the ion implant dose map and the ion beam parameter values.
  • a computer-readable medium storing computer instructions, which when executed by a computer system enables an ion beam etching system to control etching of a substrate.
  • the computer instructions comprise: retrieving an ion implant dose map containing a correlation between implant dose rate and etch rate; obtaining a recipe that contains values for ion beam parameters used in the ion beam etching of the substrate; directing an ion beam at a surface of the substrate; etching the surface with the ion beam according to the ion implant dose map and the values of the ion beam parameters in the recipe; and controlling the etching of the surface in accordance with the ion implant dose map and the ion beam parameter values.
  • the ion beam etching system comprises an end station configured to receive a substrate for ion beam etching.
  • An ion beam source is configured to direct an ion beam into the end station onto the substrate for etching thereof.
  • a controller is configured to ensure that the ion beam source provides uniform etching of the substrate.
  • a controller is configured to ensure that the ion beam source etches the surface with the ion beam, wherein the controller comprises an ion implant dose map containing a correlation between implant dose rate and etch rate.
  • the controller is further configured to direct the ion beam to etch the surface of the substrate in accordance with the ion implant dose map.
  • FIG. 1 shows a schematic block diagram of an ion beam etching system according to one embodiment of this disclosure
  • FIG. 2 shows a schematic block diagram of an ion beam etching system according to a second embodiment of this disclosure
  • FIG. 3 shows a top view schematic block diagram of an ion implanter that can be incorporated with the ion beam etching systems shown in FIGS. 1 and 2 according to one embodiment of the disclosure;
  • FIG. 4 shows a flow chart describing the operation of the ion beam etching systems shown in FIGS. 1 and 2 according to one embodiment of this disclosure
  • FIG. 5 shows an example of a desired etch pattern map according to one embodiment of this disclosure
  • FIG. 6 shows an example of an ion dose pattern map according to one embodiment of this disclosure.
  • FIG. 7 shows an example of a corrected etch rate profile using an error map according to one embodiment of this disclosure.
  • FIG. 1 shows a schematic block diagram of an ion beam etching system 100 according to one embodiment of this disclosure.
  • the ion beam etching system 100 includes an ion beam generator 102, an end station 104, and a controller 106.
  • the ion beam generator 102 generates an ion beam 108 and directs it towards a front surface of a substrate 110.
  • the ion beam 108 is distributed over the front surface of the substrate 110 by beam movement, substrate movement, or by any combination thereof.
  • the ion beam generator 102 can include various types of components and systems to generate the ion beam 108 having desired characteristics.
  • the ion beam 108 may be a spot beam or a ribbon beam.
  • the spot beam may have an irregular cross-sectional shape that may be approximately circular in one instance.
  • the spot beam may be a fixed or stationary spot beam without a scanner.
  • the spot beam may be scanned by a scanner for providing a scanned ion beam.
  • the ribbon beam may have a large width/height aspect ratio and may be at least as wide as the substrate 110.
  • the ion beam 108 can be any type of charged particle beam such as an energetic ion beam used to implant the substrate 110.
  • the end station 104 may support one or more substrates in the path of the ion beam 108 such that ions of the desired species are implanted into the substrate 110 and/or used to etch the substrate.
  • the substrate 110 may be supported by a platen 112 and clamped to the platen 112 by known techniques such as electrostatic wafer clamping.
  • the substrate 110 can take various physical shapes such as a common disk shape.
  • the substrate 110 can be a workpiece such as a semiconductor wafer fabricated from any type of semiconductor material like silicon or any other material that is to be implanted and/or etched using the ion beam 108.
  • the end station 104 may include a drive system (not illustrated) that physically moves the substrate 110 to and from the platen 112 from holding areas.
  • the end station 104 may also include a drive mechanism 114 that drives the platen 112 and hence the substrate 110 in a desired way.
  • the drive mechanism 114 may include servo drive motors, screw drive mechanisms, mechanical linkages, and any other components as are known in the art to drive the substrate 110 when clamped to the platen 112.
  • the end station 104 may also include a position sensor 116, which may be further coupled to the drive mechanism 114, to provide a sensor signal representative of the position of the substrate 110 relative to the ion beam 108.
  • a position sensor 116 may be further coupled to the drive mechanism 114, to provide a sensor signal representative of the position of the substrate 110 relative to the ion beam 108.
  • the position sensor 116 may be part of other systems such as the drive mechanism 114.
  • the position sensor 116 may be any type of position sensor known in the art such as a position- encoding device.
  • the position signal from the position sensor 116 may be provided to the controller 106.
  • the end station 104 may also include various beam sensors to sense the beam current density of the ion beam at various locations such as a beam sensor 118 upstream from the substrate 110 and a beam sensor 120 downstream from the substrate.
  • a beam sensor 118 upstream and a beam sensor 120 downstream from the substrate are referenced in the direction of ion beam transport or the Z direction as defined by the X-Y-Z coordinate system of FIG. 1.
  • Each beam sensor 118, 120 may contain a plurality of beam current sensors such as Faraday cups arranged to sense a beam current density distribution in a particular direction.
  • the beam sensors 118, 120 may be driven in the X direction and placed in the beam line as needed.
  • the ion beam etching system 100 may have additional components not shown in FIG. 1.
  • upstream of the substrate 110 there may be an extraction electrode that receives the ion beam from the ion beam generator 102 and accelerates the positively charged ions that form the beam, an analyzer magnet that receives the ion beam after positively charged ions have been extracted from the ion beam generator and accelerates and filters unwanted species from the beam, a mass slit that further limits the selection of species from the beam, electrostatic lenses that shape and focus the ion beam, and deceleration stages to manipulate the energy of the ion beam.
  • sensors such as a beam angle sensor, charging sensor, wafer position sensor, wafer temperature sensor, local gas pressure sensor, residual gas analyzer (RGA), optical emission spectroscopy (OES), ionized species sensors such as a time of flight (TOF) sensor that may measure respective parameters.
  • the controller 106 may receive input data and instructions from any variety of systems and components of the ion beam etching system 100 and provide output signals to control the components of the system 100.
  • the controller 106 can be or include a general-purpose computer or network of general-purpose computers that may be programmed to perform desired input/output functions.
  • the controller 106 may include a processor 122 and memory 124.
  • the processor 122 may include one or more processors known in the art.
  • Memory 124 may include one or more computer-readable medium providing program code or computer instructions for use by or in connection with a computer system or any instruction execution system.
  • a computer readable medium can be any apparatus that can contain, store, communicate, propagate, or transport the program for use by or in connection with the computer, instruction execution system, apparatus, or device.
  • the computer-readable medium can be an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system (or apparatus or device) or a propagation medium.
  • Examples of a computer-readable medium include a semiconductor or solid state memory, magnetic tape, a removable computer diskette, a random access memory (RAM), a read-only memory (ROM), a rigid magnetic disk and an optical disk.
  • Current examples of optical disks include a compact disk - read only memory (CD-ROM), a compact disk - read/write (CD-R/W) and a digital video disc (DVD).
  • the controller 106 can also include other electronic circuitry or components, such as application specific integrated circuits, other hardwired or programmable electronic devices, discrete element circuits, etc.
  • the controller 120 may also include communication devices.
  • a user interface system 126 may include, but not be limited to, devices such as touch screens, keyboards, user pointing devices, displays, printers, etc., that allow a user to input commands, data and/or monitor the ion beam etching system implanter 100 via the controller 106.
  • the controller 106 may be configured to allow a user to interact with the ion beam etching system 100.
  • the controller 106 may enable a user, via the user interface 126, to input a desired two-dimensional ion implant dose map that can create a very uniform etch across the substrate 110 or if required a desired nonuniform distribution of etch depth across the substrate.
  • the two-dimensional ion implant dose map which may be non-uniform or uniform, is a spatial representation of the required ion dose (ions/cm2) as a function of the two-dimensional position on the substrate that contains a correlation between implant dose rate and etch rate.
  • the ion implant dose map comprises a desired etch pattern representing the pattern to be etched in the substrate and an ion dose pattern map that designates the ion dose and rate to apply to the substrate to obtain the desired etch pattern.
  • the controller 106 may define the two-dimensional ion implant dose map and its accompanying maps (e.g., desired etch pattern map and ion dose pattern map) by a plurality of coordinates including, but not limited to, Cartesian coordinates and Polar coordinates.
  • the two-dimensional ion implant dose map is a simplified pattern having 16 different regions defined by associated Cartesian coordinates. The number in each region represents a multiplier for a nominal dose that can provide a uniform or non-uniform dose across the substrate 110.
  • the two-dimensional ion implant dose map may be an arbitrary pattern that is not limited to symmetrical patterns.
  • the two-dimensional ion implant dose map can be derived empirically, based on observed correlations of the implant dose rate to etch rate or it can be created in situ based on input from a spatially resolved etch rate monitor. More specifically, an empirically based ion implant dose map can be obtained by measuring the two-dimensional etch rate profile (typically externally to the etch process) and correlating the ion dose rate versus etch rate as a function of position on the substrate. In the simplest sense, for a linear approximation, one could use a two-dimensional matrix of proportionality constants that relate ion dose to etch depth to obtain the ion implant dose map. An in situ etch rate measurement can be used to obtain the ion implant dose map by allowing one to create the proportionality constants during the etch and feedback control them if the local etch rates vary with time during the process.
  • the controller 106 may be further configured to allow a user to interact with the ion beam etching system 100 by enabling the user to input a recipe for etching the substrate 110, view or modify a recipe that has been automatically selected by the controller 106.
  • the recipe embodies characteristics that are desired to be on the substrate 110.
  • the recipe would embody values for process parameters that the ion beam etching system 100 would use to produce a substrate with the desired characteristics.
  • process parameters includes vacuum chamber pressure, substrate temperature, ion beam species, energy, current, current density, ion to substrate angle, wafer scan velocity, beam scan velocity, end station pressure (or vacuum pumping speed), ion beam uniformity distribution (essentially a map of relative exposure that may be uniform or not as needed to achieve a uniform etch result), or a desired non-uniform etch pattern.
  • Additional parameters may include background pressure of one or more neutral gas species that may be supplied by one or more individually adjustable gas flow controllers, the gas species used to generate plasma for plasma etching, plasma density, neutral density in the plasma, electron temperature and degree of electron confinement.
  • the controller 106 uses the values of the process parameters from the recipe to select values for ion beam parameters that will be embodied in the ion beam used to etch the substrate 110.
  • An illustrative but not exhaustive listing of ion beam parameters that the controller will set initial values for include ion beam intensity, ion beam current, angle that the ion beam strikes the surface, and dose rate of ions in the ion beam.
  • the controller 106 selects initial values for these ion beam parameters from a historical database that includes a number of entries that provide combinations of settings for these parameters as applied in past ion beam etchings. Typically, each entry has been compiled by receiving input data from various sources such as a recipe generator, a beam setup report, and an ion implant report.
  • the controller 106 uses the values of the process parameters from the recipe to determine and control the application of atomic species applied by the ion beam generator 102 to the substrate 110 during the etching process.
  • the ion beam 108 generated by the ion beam generator 102 may be comprised of chemically inert species (Si+, Ar+, etc.) or additional chemical etching components (SiFx+, BF 2 +, etc.).
  • the ion beam generator 102 can also introduce reactive species to aid in attaining the desired etching of the substrate 110.
  • Typical reactive species can include HCL, Cl 2 , CO 2 , CO, O 2 , O 3 , CF 4 , NF 3 , NF 2 + ions, BF 2 + ions, F ions, F+ ions, Cl or Cl+ ions.
  • the reactive species may also include UV light either with or without a reactive gas.
  • the ion beam generator 102 may also introduce neutral reactive species or reactive low energy ions.
  • the ion beam generator 102 applies the atomic species to the surface of the substrate.
  • the atomic species are reactive to the surface of the substrate 110.
  • the ion beam generator 102 directs the ion beam at the surface.
  • the ion beam 108 strikes the surface of the substrate 110 causing the atomic species to volatize and initiate the etch.
  • the ion beam controls the interaction that the atomic species has with the surface of the substrate 110 and facilitates the desired etch of the substrate.
  • the controller 106 In order to ensure that the ion beam 108 provides a uniform etch of the substrate 110 and/or etch the pattern embodied by the ion implant dose map, the controller 106 continually monitors the ion beam parameters (e.g., ion beam current, angle that the ion beam strikes the surface, and dose rate of ions in the ion beam) to determine whether the ion beam parameters are in accordance with the parameters covered by the ion implant dose map. In particular, the controller 106 receives measurements from beam sensors 118 and 120 and/or other sensors listed above.
  • the ion beam parameters e.g., ion beam current, angle that the ion beam strikes the surface, and dose rate of ions in the ion beam
  • the received measurements take the form of signals that are indicative of ion beam properties that the controller uses to correlate to beam parameters such as ion beam current, angle that the ion beam strikes the surface, density of the ion beam and dose rate of ions in the ion beam.
  • the controller 106 then takes the values for the ion beam parameters and determines the etch depth and etch rate of the ion beam with respect to the substrate 110.
  • the controller determines etch depth and etch rate by using any well known technique such as residual gas analysis (RGA), optical emission spectroscopy (OES) analysis of etch by products, surface analysis of the substrate by reflectometry, ellipsometry, interferometry, or other techniques.
  • the etch depth and etch rate are used by the controller 106 to determine the uniformity of the etch and its conformance with the pattern embodied in the ion implant dose map.
  • the local etch depth or local etch rate integrated in time provides a measurement of etch depth distribution.
  • any deviations from the desired etch pattern map can be corrected by altering the applied ion dose distribution during the process in a feedback loop.
  • the etch depth and etch " rate measurements provide a spatially resolved one or two- dimensional etch profile distribution across the substrate.
  • the controller 106 determines that the etch is not conforming with the parameters specified in the ion implant dose map and the recipe, then the controller will adjust the ion beam generator 102 such that the ion beam 108 will contain values for the ion beam parameters (e.g., ion beam current, angle that the ion beam strikes the surface, density of the ion beam and dose rate of ions in the ion beam) that will compensate for any patterning errors and provide an etching pattern that conforms with the ion implant dose map and the recipe.
  • the ion beam parameters e.g., ion beam current, angle that the ion beam strikes the surface, density of the ion beam and dose rate of ions in the ion beam
  • the ion beam current density may be increased at the edge relative to the center in order to achieve uniform etch depth to achieve the desired etch pattern. This monitoring of the etching and adjusting of the ion beam continues until the etching of the substrate 110 has finished.
  • FIG. 2 shows a schematic block diagram of an ion beam etching system 200 according to a second embodiment of this disclosure.
  • the ion beam etching system 200 is essentially the same as the system 100 shown in FIG. 1 , however, the ion beam etching system of FIG. 2 includes a separate plasma source 202 for generating the atomic species.
  • the plasma source 202 is configured to generate atomic species such as the reactive species, inert species, metastable (electronically excited) species, neutral reactive species and/or reactive low energy ions.
  • the plasma source 202 may be a line source, a multi-aperture source or another configuration that can provide a relatively uniform exposure to the substrate. Note that any electrical bias to the substrate 110 may be relative to the potential of the plasma source 202. In any event, the controlling and monitoring of the etching process as described for system 100 is applicable for this embodiment and therefore a separate discussion is not provided.
  • FIG. 3 shows a top view of a schematic block diagram of an ion implanter 300 that can be incorporated with the ion beam etching systems shown in FIGS. 1 and 2 according to one embodiment of the disclosure.
  • the ion implanter 300 may include an ion source 310, an extraction electrode 320, a mass analyzer 330, a resolving aperture 340, a scanner 350, and an angle corrector magnet 360.
  • Other components of FIG. 3 are similar to the components of FIGS. 1 and 2 and are similarly labeled and hence any repetitive description is omitted herein for clarity.
  • controller 106 is illustrated as providing only an output signal to the scanner 350. Those skilled in the art will recognize that the controller 106 may provide output signals to each component of the ion implanter 300 and receive input signals from at least the same. In addition, although not shown in FIG. 3, the ion implanter 300 could have the plasma source 202 located about the end station 104.
  • the ion source 310 may generate ions and may include an ion chamber and a gas box containing a gas to be ionized.
  • the gas may be supplied to the ion chamber where it is to be ionized.
  • the ions thus formed may be extracted from the ion source 310.
  • the extraction electrode 320 and an extraction power supply may accelerate ions from the ion source 310.
  • the extraction power supply may be adjustable as controlled by the controller 106.
  • the construction and operation of ion sources are well known to those skilled in the art.
  • the mass analyzer 330 may include a resolving magnet that deflects ions so that ions of a desired species pass through the resolving aperture 340 and undesired species do not pass through the resolving aperture 340. In one embodiment, the mass analyzer 330 may deflect ions of the desired species by 90 degrees.
  • the scanner 350 positioned downstream from the resolving aperture 340 may include scanning electrodes as well as other electrodes for scanning the ion beam.
  • the scanner 350 may include an electrostatic scanner or a magnetic scanner. Note that the scanner 350 is not required for other ion implanters using a ribbon beam.
  • the angle corrector magnet 360 deflects ions of the desired ion species to convert a diverging ion beam to a nearly collimated ion beam having substantial parallel ion trajectories. In one embodiment, the angle corrector magnet 360 may deflect ions of the desired ion species by 70 degrees.
  • the scanner 350 may scan the ion beam in one direction and the drive mechanism 114 may physically drive the substrate 110 in a direction orthogonal to the scan direction to distribute the scanned ion beam 108 over the front surface of the substrate 110.
  • the scan direction may be in the horizontal X direction while the drive mechanism 114 may drive the substrate vertically in the Y direction as those X and Y directions are defined by the coordinate system of FIG. 3.
  • Another ion implanter embodiment may generate a stationary or fixed spot beam (e.g., without a scanner) and the drive mechanism 114 may drive the substrate 110 in the X and Y directions to distribute the ion beam across the front surface of the substrate 110.
  • Yet another ion implanter embodiment may generate a ribbon beam having a large width/height aspect ratio with a width at least as wide as the substrate 110. The drive mechanism 114 may then drive the substrate in a direction orthogonal to the width of the ribbon beam to distribute the ion beam across the front surface of the substrate 110.
  • FIG. 4 shows a flow chart 400 describing the operation of the ion beam etching systems shown in FIGS. 1 and 2 according to one embodiment of this disclosure.
  • the ion beam etching process begins at 402 where the two-dimensional ion implant dose map (e.g., desired etch pattern map and ion dose pattern map) for the etch is loaded in or obtained by the ion beam etching system.
  • the recipe for the etch is also loaded in or obtained by the ion beam etching system at 404.
  • the two-dimensional ion implant dose map describes the pattern (symmetric or non-symmetric) that the user desires to etch in the substrate and the recipe describe values for etch process parameters that the ion beam etching system will use to obtain the desired etch characteristics.
  • a substrate from a loading cassette or substrate holder is introduced into a vacuum chamber (within the end station) for processing.
  • a transport mechanism places and locks the substrate in the vacuum chamber onto the platen at 406 in position where the ion beam and atomic species can penetrate the surface of the substrate.
  • the controller 106 uses the values of the ion implant dose map and the etch process parameters from the recipe to select values for ion beam parameters at 408 that will be embodied in the ion beam used to etch the substrate 110. Afterwards, the controller initiates the application of the atomic species to the substrate 110 at 410.
  • the atomic species can include reactive species, chemically inert species, chemical etching components or reactive low energy ions.
  • the atomic species interact with the surface of the substrate 110 for a predetermined time at 412.
  • the controller then prompts the ion beam generator 102 to direct the ion beam at the surface of the substrate at 414.
  • the ion beam 108 strikes the surface of the substrate 110 causing the atomic species to volatize and initiate the etch at 416 that is in conformance with the pattern provided by the ion implant dose map.
  • the controller 106 continually monitors the ion beam parameters (e.g., ion beam current, angle that the ion beam strikes the surface, density of the ion beam and dose rate of ions in the ion beam) and process parameters during the etching process at 418.
  • the controller receives measurements from beam sensors 118 and 120 and determines at 420 whether the etch conforms to the pattern provided by the ion implant dose map.
  • the controller 106 determines at 420 that the etch does not conform to the pattern provided by the ion implant dose map, then the controller will adjust the ion beam generator 102 at 422 such that the ion beam 108 will compensate for any patterning errors and provide a pattern that conforms with the ion implant dose map.
  • the controller 106 will create a map of any deviations from the desired etch depth pattern and the resulting difference signal can be used to modify the ion dose map to compensate locally for the deviation.
  • the monitoring of the etching and adjusting of the ion beam embodied in blocks 416-422 continue until it has been determined at 424 that the etching of the substrate 110 has finished.
  • each block represents a process act associated with performing these functions.
  • the acts noted in the blocks may occur out of the order noted in the figure or, for example, may in fact be executed substantially concurrently or in the reverse order, depending upon the act involved.
  • the step of applying radical species to the substrate with a time difference prior to ion beam exposure could be altered because these steps are intended to mimic the idea of two paintbrushes, one ahead of the other, that paint the substrate in a uniform fashion.
  • additional blocks that describe the processing functions may be added.
  • FIGS. 5-7 show an example of how the ion beam etching systems of this disclosure could be used to generate a uniform etch and/or etch a non-uniform pattern.
  • FIG. 5 shows an example of a desired etch pattern map that comprises three etch regions (region 1 , region 2 and region 3).
  • the etch rate for region 1 is greater than the etch rate for region 2 which is greater than the etch rate for region 3.
  • the radially varying example shown in FIG. 5 will have reduced etch at the substrate edges as opposed to the center.
  • FIG. 6 shows an example of an ion dose pattern map that will generate the desired etch pattern map shown in FIG. 5.
  • FIG. 6 shows that the ion dose for region 1 will be greater than the ion dose for region 2 which will be greater than the ion dose for region 3.
  • region definition may be distinct from etch spatial distribution to account for thermal or other effects.
  • the controller 106 determines that the etch does not conform to the pattern provided by the desired etch pattern map, then the controller will adjust the ion beam generator 102 to compensate for any patterning errors and provide a pattern that conforms with the ion implant dose map. More specifically, the controller 106 creates a map of any deviations from the desired etch depth pattern and the resulting difference signal can be used to modify the ion dose map to compensate locally for the deviation.
  • FIG. 7 shows an example of a corrected etch rate profile using an error map. In the example of FIG. 7, the etch rate was too high in the center of the substrate relative to the edge. In order to compensate for this error in etch rate, the ion beam dose distribution is altered to achieve the desired etch pattern.
  • the ion beam dose rate of region 4 at the center of the pattern will be reduced relative to the other regions (i.e., regions 1 , 2 and 3) of the pattern.
  • etch rate monitoring would continue to determine if the corrective action was sufficient. If not, then subsequent alterations would occur until the desired etch pattern has been obtained.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé de correction d'uniformité bidimensionnelle pour gravure assistée par faisceau ionique. Dans un mode de réalisation, elle concerne un procédé de gravure d'un substrat par faisceau ionique. Dans ce mode de réalisation, une carte de doses d'implants ioniques contenant une corrélation entre un rapport de doses d'implant et un rapport de gravure est récupéré. De plus, l'invention concerne une formule qui contient des valeurs de paramètres de faisceau ionique utilisées dans la gravure par faisceau ionique du substrat. Un faisceau ionique est dirigé sur la surface du substrat et la surface est gravée à l'aide du faisceau ionique selon la carte des doses d'implant ionique et les valeurs des paramètres du faisceau ionique de la formule. La gravure de la surface est réglée selon la carte des doses d'implant ionique et les valeurs des paramètres du faisceau ionique.
PCT/US2008/076644 2007-09-28 2008-09-17 Correction d'uniformité bidimensionnelle pour gravure assistée par faisceau ionique WO2009045722A1 (fr)

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US11/863,921 2007-09-28

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US11276553B2 (en) * 2019-10-31 2022-03-15 University Of Electronic Science And Technology Of China Device for measuring emission angle of particle beam

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US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
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US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
US10553392B1 (en) * 2018-12-13 2020-02-04 Axcelis Technologies, Inc. Scan and corrector magnet designs for high throughput scanned beam ion implanter
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