TW200924584A - Solder pad structure with high bonding strength to solder ball - Google Patents

Solder pad structure with high bonding strength to solder ball Download PDF

Info

Publication number
TW200924584A
TW200924584A TW96144534A TW96144534A TW200924584A TW 200924584 A TW200924584 A TW 200924584A TW 96144534 A TW96144534 A TW 96144534A TW 96144534 A TW96144534 A TW 96144534A TW 200924584 A TW200924584 A TW 200924584A
Authority
TW
Taiwan
Prior art keywords
solder
pad
solder ball
layer
metal
Prior art date
Application number
TW96144534A
Other languages
Chinese (zh)
Other versions
TWI342174B (en
Inventor
Run-Zhong Xu
Original Assignee
Kinsus Interconnect Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kinsus Interconnect Tech Corp filed Critical Kinsus Interconnect Tech Corp
Priority to TW96144534A priority Critical patent/TW200924584A/en
Publication of TW200924584A publication Critical patent/TW200924584A/en
Application granted granted Critical
Publication of TWI342174B publication Critical patent/TWI342174B/zh

Links

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The present invention is a solder pad structure with high bonding strength to solder ball. The solder pad structure has a geometric shape and an enlarged contact area to an embedded solder ball so as to enhance the bonding strength to solder ball. In a circuit board, a solder mask layer wraps around the circuit layer to constitute a solder pad opening and the circuit layer within the solder pad opening is defined as the solder pad. In this way, when a solder ball is placed on the solder pad within the solder pad opening, in addition to the contact by the side wall of the solder pad opening, additional contact by the geometric shape of the solder pad can further enhance the bonding strength to the solder ball owing to the fact that bonding strength is proportional to the contact area.

Description

200924584 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種鮮墊結構尤指對錫球有高結合力的銲墊結構。 【先前技術】 在電子產品朝向微型化的趨勢下,載板上的電子接點的開口,例如錫 球銲墊(ball pad)或結合銲墊(bump pad)的開口,以及填入銲塾的鎖球或 凸塊,其尺寸也跟著愈來愈小。例如:BGA的銲墊寬(Pitch)已由1咖縮小 成0· 4腿’甚至還有〇· 3mm的需求,而SM的銲墊開口則由350/zm縮小至 200/zm以下’ FlipChip的銲墊開口也由ΙΟΟ/^m縮小至70/zm等的設計需 求。然而,在微型化的趨勢下封裝製程上面臨到了前所未有的問題。 由於錫球與焊塾的結合強度與接觸面積成正比,因此當隨著尺寸越來 越小時’錫球與焊墊的結合強度也隨著接觸面積變小而降低,進而導致容 易在封裝製程完成後’因外力震動(例如摔落)造成脫落、拉離及崩裂(crack) 現象。若發生上述現象時將使電子接點失去連結功能而斷路(〇pen),因此 如何能增強結合強度變成是一個重點。 舉例來說’手持裝置(handset)的電子零件往往必須要進行耐摔實 驗’以確保終端產品不會因為不小心被摔落地上後導致故障。這禮產生的 故障原因’通吊疋因為掉豸時所帶來的衝擊力i ’造成錫球接點裂開。K b曰片於封裝製程在完成晶片與基板連接後,最後會有植録球作業,組裝廠 200924584 再將該封裝後的零賴由舰祖γ設備放在PGB _上,麵㈣w使 該晶片上的鍚球熔化而與PCB進行焊接。一般上PCB上焊墊面積往往大於 1C基板上的轉’使得财與轉的介面的可靠朗題雜發生在1C基板 端所以’當該電子產品在受到撞擊力量時,也往往在IC基板錫球與焊塾 所產生的IMC (inter metallic compound)層發生斷裂(crack),例如手機 在掉落地上後就無法開機就是典型的例子。 -般來說’為了增加錫球鱗塾之_結合強度,在輯上通常都儘 量放大輝觸n(St?G)。’在微小化設計的要求下,但因空間上的限制 使得SR0能放大的程度有限,甚而因测放大後必須使用更精密的影像轉 移及曝光對位,造成設備成本增加很多。另外,為防止介金屬層⑽c)因 Reflow次數增加而增厚’在鎳金鍍層間再錢上一層統⑽以抑制肌層 厚度的增加,但目增加婦制必娜改電鐘賴,又加德本身亦是貴 重金屬’這亦會使得該製程的成本增加。 【發明内容】 本發明之主要目的在提供—麟錫球有高結合力的銲墊結構,主要藉 著接觸面積與結合力成正比的原理,料提供銲塾__狀體所增加的 接觸及加強其結構體部分,以進一步提高對錫球的結合力。 本發明之次要目的在提供-賴錫球有高結合力的銲塾結構 ,以類似 於k尼與鋼筋的結構關係原理,猎由類錯狀(TB〇ne)結構來镶後在錫球内, 以抵抗電子產品掉落所發生震動的反覆應力。 200924584 基於上述目的’本發明對錫球有高結合力的銲墊結構,其具有幾何形 狀體’而職人爾_场細積,咖觸视结合力。 在電路板愤銲阻綱職觀路相構成銲細口,且在焊墊開口内的 、泉路曰被疋義成雜如此_來,在鱗墊開口内畴墊填人錫球時,除 了銲塾開口.壁面輸觸部分,更藉著接觸面積與結合力成正比的抓 額外提供___增加的娜吩,以進__步提高對錫球的結 合力。 關; 丨於本發明之伽與精射喊如下暖日腳述及所附 一步的瞭解。 圖式得到進 【實施方式】 本發明賴翁聽合力_㈣構,其具錢何雜體,而對勸 入的錫球絲__ •嶋_她W來,初 銲塾開Π内的銲墊填入錫球時,除了轉開π壁面等的接觸部分,更紹 接觸面麵蝴蝴 觸部分及加強其結構體部分,以進一步提高對錫球的結合力。底下,分另 以不同的實施例來說明幾何形狀體的實施樣態。在這些實施樣態中,料 的幾何形狀體之剖面形狀主要有Τ字型、練、凹狀或凸狀。 閱第ΙΑ 1Β圖’第1Α〜1Β圖為本發明對锡球有高結合力的鲜塾矣 構之第-實施例示意圖。如第u或1Β圖所示,在電路板财,防鮮阻 層12圍繞著線路層而構成銲_口,且在焊鋼口内的線路層被定義成 200924584 塾14。為了提高對錫球的結合力,焊墊14的幾何形狀體16a之剖面形狀大 體上為T字型或雛。第1B圖為第1A圖中AA線段的剖面圖。 為了製作出τ字型或錯狀的幾何形狀體16a,先於焊墊14上 電鑛形成 第-電鍵金屬18a、18b,然後以第—電鍍金屬18a、18b為侧阻擋層並進 行選擇性侧’而使第二電鍍金屬18c被侧出向内凹陷狀,進而使得銲 墊結構16a的剖面形狀為T字型或銷狀。這其中,第一電鍍金屬18a、脱 與第一電鍵金屬18c的面積小於焊墊14,以便於實施選擇性姓刻。 具體來說,在BGA焊塾14上’第一電鍍金屬18a'18b為金屬銅或鎳 金’而第二電鍍金屬18c為金屬鋼’因此在做閃⑽lash耐㈣時,為 錄金的第-電鏡金屬18a、刷可做為侧阻劑,故不會被侧掉,並於钱 刻後仍留於原處並形成-懸崖狀(Detail “Γ )的支架(TBQne)。此做法 可防止被獻金屬層不會狀錫球並具健持原始霸高度的優點。該τ S支架(T Bone)的功旎加強其抓住錫球的力量,在植球並經過犷出⑽後, 錫球會填滿髓下方的空隙。如此,第—驗金屬版、⑽在錫球内形成 類似補強θ 類㈣倾賴抵齡上的應力,钱雜抗制強度增 加。 請參閱第2A〜2B圖,第2A〜2B圖為本發明對錫^高結合力的銲墊結 構之第一實施例不忍圖。如第2A或2B圖所示,防銲_丨層12圍繞著線路 層而構成銲墊開口’且在烊墊開口簡線路層被定義成焊墊Μ。同樣為了 提高對錫球的結合力,焊墊14的幾何形狀體服之剖面形狀大體上為凹 狀。如此-來,在對銲塾開口内的銲墊14填入錫球時,除了鲜塾開口壁面 200924584 =:部分,更藉著接觸面積與結合力成正比的原理,額外满㈣ 的凹^何形狀體所增加的接觸部分,叫—步提高對錫球的結合力。 :參閱跡3B圖,第㈣圖為本發明對錫球有高結合力的鲜塾結 Γ 例示意圖。如第3A或3β圖所示,防辉阻削圍燒著線路 層而構成轉開口 ’且在焊塾開口 _路層_成焊墊Μ。同樣為了 提兩對錫球的結合力,焊墊14的幾何形狀體收之剖面形狀大體上為凸 狀’而額外提供接觸部分,以進-步提高對錫球的結合力。 請參閱第錢圖,第㈣圖為本發明對錫球有高結合力的銲墊結 構之第四實施例示意圖。如第4A岑4β 錢$ 4β圖所不’防銲阻劑層12圍繞著線路 層而構成銲塾開π,且在焊墊開π内的線路層被定義成焊墊14。同樣為了 提高對錫球的結合力,焊墊14的幾何形狀體脱之剖面形狀大體上為複數 個凸狀’ _外提供接觸部分,以進__步提高對錫球的結合力。 藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特 徵與精神’而並非社述所減的較镇體實齡i輕本個之範疇加以 阳制相反地,其目的疋希望此涵蓋各種改變及具相等性的安排於本發明 所欲申請之專利範圍的範疇内。 【圖式簡單說明】 弟1A〜1B圖為本發明對錫球有高結合力的銲塾結構之第一實 施例示意圖。 第2A〜2B圖為本發明對錫球有高結合力的銲整結構之第二實 200924584 施例不意圖。 球有高結合力的銲墊結構之第三實 衆有向結合力的鲜塾結構之第四實 第3A〜3B圖為本發明對锡 施例示意圖。 第4A〜4B圖為本發明對鎮 施例示意圖。 【主要元件符號說明】 10電路板 12防焊阻劑層 14焊墊 16a〜16d幾何形狀體 18a〜18c電鐵金屬200924584 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a pad structure, in particular, a pad structure having a high bonding force to a solder ball. [Prior Art] In the trend toward miniaturization of electronic products, openings of electronic contacts on a carrier board, such as an opening of a ball pad or a bump pad, and filling of a solder bump Lock balls or bumps, the size of which is getting smaller and smaller. For example, the BGA's pad width has been reduced from 1 coffee to 0. 4 legs and even 〇 3mm, while the SM pad opening has been reduced from 350/zm to below 200/zm. FlipChip The pad opening is also reduced from ΙΟΟ/^m to 70/zm design requirements. However, there is an unprecedented problem in the packaging process under the trend of miniaturization. Since the bonding strength between the solder ball and the soldering iron is proportional to the contact area, the bonding strength between the solder ball and the solder pad decreases as the contact area becomes smaller as the size becomes smaller, which leads to easy completion in the packaging process. After the 'external force vibration (such as falling) caused by falling off, pulling off and cracking. If the above phenomenon occurs, the electronic contact will be disconnected and the circuit will be disconnected, so how to enhance the bonding strength becomes an important point. For example, electronic components of a handset often have to undergo a drop-resistance test to ensure that the end product does not fail if it is accidentally dropped. The cause of the malfunction caused by this ceremony is that the solder ball joint is cracked due to the impact force i' caused by the drop. K b 曰 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在The upper ball is melted and welded to the PCB. Generally, the area of the pad on the PCB is often larger than that on the 1C substrate. This makes the reliability of the interface between the financial and the transfer happen on the 1C substrate end. Therefore, when the electronic product is subjected to impact force, it is often on the IC substrate. Cracking occurs with the IMC (inter metallic compound) layer produced by the soldering iron. For example, a mobile phone cannot be turned on after it has landed. This is a typical example. In general, in order to increase the bonding strength of the solder ball scale, it is usually necessary to enlarge the glow touch n (St? G). Under the requirement of miniaturization design, due to space constraints, SR0 can be amplified to a limited extent. Even after precision amplification, it is necessary to use more precise image transfer and exposure alignment, resulting in a lot of equipment cost. In addition, in order to prevent the intermetallic layer (10)c) from thickening due to the increase in the number of Reflow's, the gold layer is further layered (10) to inhibit the increase of the thickness of the muscle layer, but the increase in the effect of the woman will change the electric clock, plus Germany itself is also a precious metal' which will also increase the cost of the process. SUMMARY OF THE INVENTION The main object of the present invention is to provide a pad structure having a high bonding force, which is mainly based on the principle that the contact area is proportional to the bonding force, and provides the increased contact of the solder 塾__ Strengthen the structure of the body to further enhance the bonding force to the solder ball. The secondary object of the present invention is to provide a solder joint structure having a high bonding force, which is similar to the structural relationship between kni and steel, and is hung in a solder ball by a TB〇ne structure. Resilience to the vibrations that occur when electronic products fall. 200924584 Based on the above purpose, the present invention has a high-bonding pad structure for a solder ball, which has a geometric shape and a fine-grained product, and the coffee touches the bonding force. In the circuit board, the welding process of the circuit is formed by the welding process, and the spring road in the opening of the pad is smashed into the same. When the ball is filled in the opening of the scaly pad, except for the welding 塾Opening. The wall part of the contact part, and by means of the contact area proportional to the binding force, the additional η is added to increase the bonding force of the solder ball. Guan; 丨 本 本 本 与 与 与 与 与 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本The figure is obtained [Embodiment] The invention is based on the combination of the _ (four) structure, which has money and miscellaneous body, and the solder ball that is persuaded to __ • 嶋 _ she W, the welding in the initial welding 塾When the pad is filled with the solder ball, in addition to the contact portion of the π wall surface, the contact portion of the surface is touched and the structural portion is strengthened to further improve the bonding force to the solder ball. In the following, the embodiment of the geometric body will be described in different embodiments. In these embodiments, the cross-sectional shape of the geometry of the material is mainly Τ-shaped, trained, concave or convex. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a first embodiment of a fresh structure having a high binding force to a solder ball of the present invention. As shown in Figure u or Figure 1, in the circuit board, the anti-friction layer 12 constitutes a solder joint around the circuit layer, and the wiring layer in the solder steel port is defined as 200924584 塾14. In order to improve the bonding force to the solder balls, the cross-sectional shape of the geometric body 16a of the bonding pad 14 is substantially T-shaped or young. Fig. 1B is a cross-sectional view taken along line AA of Fig. 1A. In order to produce a τ-shaped or erroneous geometry body 16a, first-electrode metal 18a, 18b is formed on the pad 14 first, and then the first plating metal 18a, 18b is used as a side barrier layer and selective side is performed. The second plating metal 18c is recessed inwardly in the side, so that the cross-sectional shape of the pad structure 16a is T-shaped or pin-shaped. Among them, the area of the first plating metal 18a and the first key metal 18c is smaller than that of the bonding pad 14 in order to implement selective surrogate. Specifically, on the BGA pad 14 'the first plated metal 18a' 18b is metal copper or nickel gold ' and the second plated metal 18c is metal steel '. Therefore, when doing the flash (10) lash resistance (four), it is the first of the gold recording - Electron mirror metal 18a, brush can be used as a side resist, so it will not be sideways, and will remain in place after the money is carved and form a cliff-like (Detail "Γ" bracket (TBQne). This can prevent being The metal layer does not have the shape of a solder ball and has the advantage of maintaining the original height. The power of the τ S bracket (T Bone) strengthens its ability to grasp the solder ball. After the ball is implanted and passed out (10), the solder ball Will fill the void below the marrow. Thus, the first metal plate, (10) in the solder ball similar to the reinforcement of the θ class (four) depends on the age of the stress, the strength of the miscellaneous resistance increased. Please refer to Figure 2A ~ 2B, 2A to 2B are diagrams showing the first embodiment of the solder pad structure for the high bonding force of the present invention. As shown in FIG. 2A or 2B, the solder resist layer 12 is formed around the circuit layer to form a pad opening. 'And the layer of the pad is defined as a pad Μ. Also in order to improve the bonding force of the ball, the geometry of the pad 14 is taken. The shape of the surface is substantially concave. Thus, when the soldering pad 14 in the opening of the soldering hole is filled with the solder ball, except for the portion of the opening wall 200924584 =:, the contact area is proportional to the bonding force. The contact portion added by the extra (four) concave shape and the shape of the body is called to increase the bonding force to the solder ball. See the trace 3B, and the fourth figure is the fresh knot of the high binding force of the solder ball of the present invention.示意图 Example diagram. As shown in the 3A or 3β diagram, the anti-corrosion resistance cuts the circuit layer to form the turn-opening 'and the soldering opening_the road layer_the soldering pad. Also to mention the combination of the two pairs of solder balls The force, the geometry of the pad 14 is substantially convex in shape, and the contact portion is additionally provided to further improve the bonding force to the solder ball. Please refer to the figure of the money, and the figure (4) is the pair of the present invention. A fourth embodiment of a solder pad structure having a high bonding force of a solder ball. As shown in FIG. 4A岑4β钱$4β, the solder resist layer 12 is formed around the circuit layer to form a solder 塾 π, and in the pad The circuit layer within the opening π is defined as the solder pad 14. Also in order to improve the bonding force to the solder ball, the bonding pad 14 The geometric shape of the body is substantially in the form of a plurality of convex shapes, and the contact portion is provided to increase the bonding force to the solder balls. With the detailed description of the preferred embodiment above, it is desirable to The features and spirits of the present invention are more clearly described, and the scope of the present invention is not the same as that of the society. It is intended to cover the various changes and equivalence arrangements. Within the scope of the patent scope of the invention to be applied for. [Simplified description of the drawings] The drawings 1A to 1B are schematic views of the first embodiment of the welding structure having high bonding force to the solder balls of the present invention. Figs. 2A to 2B are The invention of the second embodiment of the welded structure having high bonding force to the solder ball is not intended. The fourth embodiment of the third embodiment of the present invention has a high bonding force of the bonding pad structure. The third embodiment of the present invention is a schematic diagram of the tin application of the present invention. 4A to 4B are schematic views of the embodiment of the present invention. [Main component symbol description] 10 circuit board 12 solder resist layer 14 solder pad 16a~16d geometry body 18a~18c electric iron metal

Claims (1)

200924584 十、申請專利範園: 1· 一種對錫球有高姓人^ D Ί S力的銲墊結構,在一電路板中 一防辉阻劑層圍繞菩_ 6 、·路層而構成一銲塾開口,且在該 焊墊開口内的該線路層祜 層被疋義成一焊墊,其特徵在於,該 焊墊具有幾何形狀體,而# 而對被填入的該錫球帶來增大的接 觸面積。 曰2.如申請專利範圍第1項所述之對錫球有高結合力的 銲塾結構,其中該焊塾的幾何形狀體之剖面形狀為T字 型、錯狀、凸狀或凹狀。 一 3.—種對錫球有高結合力的銲塾結構之製造方法,在 層圍繞著—線路層而構成-銲墊 開口且在該焊塾開口内+ Μ 制、“ ⑽料路層被定義成-焊墊,該 衣造方法包含: 於該焊塾上依序電鍍形成-第-電鍍金屬與—第二電 鍍金屬;以及 以該第一電鍍金屬為勉刻阻擒層並進行選擇性餘刻, ,得該第:電鑛金屬被㈣出向内凹陷狀,進而使 得整體鲜塾結構的剖面形狀為Τ字型或錯狀。 4·如巾請專利範圍第㈣所述之對踢球有高結合力的 結構,其中該第—電鑛金屬為金屬鋼或錄金,而該第 11 200924584 二電鍍金屬為金屬銅。 5.如申請專利範圍第3項所述之對錫球有高結合力的 銲墊結構,其中該第一電鍍金屬與該第二電鍍金屬的面積 小於該焊墊。 12200924584 X. Applying for a patent garden: 1. A solder pad structure with a high surname ^ D Ί S force on a solder ball. In a circuit board, an anti-resistive layer surrounds the Bo_6 and · road layers. Soldering the opening, and the layer of the circuit layer in the opening of the pad is smeared into a pad, characterized in that the pad has a geometric body, and # increases the filled solder ball Large contact area.曰 2. A solder joint structure having a high bonding force to a solder ball as described in claim 1 wherein the cross-sectional shape of the geometric shape of the solder fillet is T-shaped, erroneous, convex or concave. A method for manufacturing a solder joint structure having a high bonding force to a solder ball is formed by laminating a layer around the layer - a pad opening and + in the opening of the soldering ring, "(10) the material layer is Defined as a solder pad, the method of fabricating comprises: sequentially forming a first-plating metal and a second plating metal on the soldering pad; and etching the barrier layer with the first plating metal and performing selective The engraving, the first: the electric ore metal is (4) inwardly recessed, so that the overall shape of the fresh sorghum structure is U-shaped or erroneous. 4·For the towel, please refer to the scope of the patent (4) a structure having a high bonding force, wherein the first electro-mineral metal is metal steel or gold, and the eleventh 200924584 second electroplated metal is metallic copper. 5. The solder ball is high as described in claim 3 a bonding pad structure, wherein an area of the first plating metal and the second plating metal is smaller than the bonding pad.
TW96144534A 2007-11-23 2007-11-23 Solder pad structure with high bonding strength to solder ball TW200924584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW96144534A TW200924584A (en) 2007-11-23 2007-11-23 Solder pad structure with high bonding strength to solder ball

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW96144534A TW200924584A (en) 2007-11-23 2007-11-23 Solder pad structure with high bonding strength to solder ball

Publications (2)

Publication Number Publication Date
TW200924584A true TW200924584A (en) 2009-06-01
TWI342174B TWI342174B (en) 2011-05-11

Family

ID=44729083

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96144534A TW200924584A (en) 2007-11-23 2007-11-23 Solder pad structure with high bonding strength to solder ball

Country Status (1)

Country Link
TW (1) TW200924584A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106817835A (en) * 2015-11-30 2017-06-09 碁鼎科技秦皇岛有限公司 Circuit board and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106817835A (en) * 2015-11-30 2017-06-09 碁鼎科技秦皇岛有限公司 Circuit board and preparation method thereof

Also Published As

Publication number Publication date
TWI342174B (en) 2011-05-11

Similar Documents

Publication Publication Date Title
JP5324051B2 (en) Wiring substrate manufacturing method, semiconductor device manufacturing method, and wiring substrate
US9508666B2 (en) Packaging structures and methods with a metal pillar
TWI459871B (en) Built-in parts wiring board, built-in parts wiring board manufacturing methods
JP5479073B2 (en) Wiring board and manufacturing method thereof
US20120067635A1 (en) Package substrate unit and method for manufacturing package substrate unit
TW201208022A (en) Flip chip package assembly and process for making same
CN108231716B (en) Package structure and method for manufacturing the same
TWI343112B (en) Package substrate having electrical connection structure and method for fabricating the same
JP2012209553A (en) Printed wiring board
CN109659239A (en) A kind of integrated circuit packaging method and encapsulating structure burying core process postposition
US20120327574A1 (en) Electronic component
TWI393229B (en) Packing substrate and method for manufacturing the same
TW200924584A (en) Solder pad structure with high bonding strength to solder ball
JP2003332716A (en) Wiring board and method of manufacturing same
JP2013004843A (en) Land structure of electronic equipment
US20080157359A1 (en) Crack-resistant solder joint, electronic component such as circuit substrate having the solder joint, semiconductor device, and manufacturing method of electronic component
CN102064136B (en) Integrated circuit structure
TWI501366B (en) Package substrate and fabrication method thereof
JP5906264B2 (en) Wiring board and manufacturing method thereof
JP2008004687A (en) Method of manufacturing semiconductor device
JP4745185B2 (en) Manufacturing method of semiconductor circuit module
JP5994484B2 (en) Printed wiring board
TWI310589B (en) Surface structure of package substrate and method of manufacturing the same
CN103515329B (en) Substrate structure and semiconductor package using the same
KR20120007645A (en) Stack chip using electroless plating and bonding method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees