200914202 pt.apy^u z^uu/twf.doc/n 九、發明說明： 【發明所屬之技術領域】 法 本發明是有Μ於-種化學機細磨設備及其維持方 法，且特別是有關於—種研磨墊調節器及研磨墊的調節方 【先前技術】 隨著半導體元件特_尺寸逐漸縮小至深次微 範圍’為了確保元件的可靠度，在製作積體電路或其他電 子裝置時’提供極度平坦的晶圓表面或基絲面是十分重 要的。 在半導體製程中，化學機械研磨法(—Μ mechamcai P〇lishing，CMP)是現今較常使用之全面性平坦 化的技術。-般而言，在化學機械研磨㈣程中 應含有化學助劑(reagent)與研磨難之研聚⑼ 況 :，將被㈣之晶圓表面朝向轉速受到控制的研磨塾上， 错由晶圓與研磨墊之間的相對運動來達成平坦化 換言之，當晶_按壓的方式於研磨虹轉 面與研漿巾的研磨雜倾此接觸 付曰曰0表面產生耗損，而使其表面逐漸平坦。 f而’在進行—段長時_化學研 研磨墊的絲會變得細b(glazing) 顆粒’有的則可能是來自晶圓表面上=== 200914202 pi.npyjyj ^.juuitwf.dOC/n 料所生成的副產品$ 研磨製程的品質，必須 ）°因此’為了確保化學機械 磨墊恢復適當的粒^使料磨墊調節11 (eGnditi_)使研 與穩定度。 Q &，以維持研磨墊對晶圓的研磨速率 圖1A是以習知200914202 pt.apy^uz^uu/twf.doc/n IX. Description of the invention: [Technical field to which the invention pertains] The present invention is related to a chemical machine fine grinding apparatus and a maintenance method thereof, and particularly relevant - Polishing pad adjuster and polishing pad adjustment method [Prior Art] As the semiconductor component is gradually reduced to a deep sub-range "to ensure the reliability of the component, when manufacturing an integrated circuit or other electronic device" An extremely flat wafer surface or baseline surface is very important. In semiconductor manufacturing, chemical mechanical polishing (-Μ mechamcai P〇lishing, CMP) is a comprehensive flattening technique that is commonly used today. In general, in the chemical mechanical polishing (four) process should contain chemical additives (reagent) and grinding difficult to polymerize (9):: (4) the wafer surface facing the rotational speed of the controlled polishing, wrong by the wafer and grinding The relative motion between the pads is used to achieve flattening. In other words, when the crystal-pressing method is applied to the grinding surface of the grinding rainbow and the polishing pad, the contact surface is worn out, and the surface is gradually flattened. f and 'in progress - segment length _ chemical grinding pad wire will become fine b (glazing) particles may be from the surface of the wafer === 200914202 pi.npyjyj ^.juuitwf.dOC/n The by-product produced by the material, the quality of the grinding process, must be). Therefore, in order to ensure that the chemical mechanical polishing pad restores the proper grain, the material is adjusted to 11 (eGnditi_) for research and stability. Q & to maintain the polishing rate of the polishing pad to the wafer. Figure 1A is a conventional
OO
L 意圖。研磨墊1〇〇中磨墊調節器處理研磨墊的剖面示 來使散佈於研磨藝^成有多個溝槽102。溝槽搬是用 100與待研磨晶圓之上的研漿可以均勻分布在研磨墊 研磨後，研磨塾此外，在經過長時間的化學機械 留顆粒120。另一方以及/冓槽102底部會散佈有許多殘 以及多個鑽石顆养& 114。’研磨墊調節11 U〇包括底層112 表面，用以刮除研磨塾粒114配置於底層112之 110修整研磨墊1〇〇萨一、表面。當使用研磨墊調節器 調節器110沿著特定二’。藉由分別使研磨墊100與研磨墊 對研磨墊100進行機^轉動’而使旋轉的鑽石顆粒114 已形變之區域，並係瓜:摩擦，以移除研磨墊100表面上 然而，研磨墊100在細、尚，^〇〇恢復對研漿的抓取能力。 後，研磨墊1〇〇表 人研磨墊調節器110修整處理 上的溝槽102的深度合^ 3有所損耗，造成研磨墊1〇〇 的聚集顆粒m因；;易二變粒12〇所聚集而成 圖1B是使用經由 久的溝槽阳中逸出。 墊對晶圓進行化學機械研磨 墊：節器處理後之研磨 經過多次調節修整後，其、。]面不思圖。研磨墊100在 顆粒122,且溝槽1〇2:H〇2中已堆積有大型的聚集 ，衣度會減少。在使用研磨墊1〇〇 200914202 pi.apv^u κ) uuztwf. doc/n 對晶圓130進行化學機械研磨時，聚集顆粒122會從變淺 溝槽102中逸出，而移動至研磨墊1〇()的表面與晶圓130 的表面之間。如此，這些聚集顆粒122往往會在研磨的過 私中於晶圓130的表面造成微刮痕(1111(：1：〇_5(^扣也)14〇，進 而嚴重影響後續製程。 • 由於晶圓表面的薄膜平坦度及均勻度會取決於研磨 . 墊之特性，因此如何有效地控制研磨墊之結構及機械性質 f》 對於晶圓表面平坦化是十分重要。 【發明内容】 有鑑於此，本發明提供一種研磨墊調節器，可以在修 整研磨墊的同時，將聚集的殘留顆粒一併刷除。 本發明提供一種研磨墊的調節方法，有助於改善殘留 顆粒堆積於研磨墊上的情況，並能夠使研磨墊的使用壽命 增長。L intention. In the polishing pad 1 磨, the pad conditioner adjusts the cross section of the polishing pad so as to be dispersed in the polishing process to form a plurality of grooves 102. The groove is moved with 100 and the slurry on the wafer to be polished can be evenly distributed on the polishing pad. After grinding, the polishing is further performed, and after a long period of chemical mechanical retention of the particles 120. The other side and/or the bottom of the groove 102 are scattered with a lot of debris and a plurality of diamonds & 114. The polishing pad adjusts 11 U to include the surface of the bottom layer 112 for scraping off the abrasive particles 114 disposed on the bottom layer 112 to trim the polishing pad 1 . When using the polishing pad adjuster adjuster 110 along a particular two'. The polishing pad 100 is deformed by causing the polishing pad 100 and the polishing pad to rotate the polishing pad 100, respectively, and rubbing to remove the surface of the polishing pad 100. However, the polishing pad 100 In the fine, still, ^ 〇〇 restore the ability to grasp the slurry. After that, the depth of the groove 102 on the polishing pad 1 of the polishing pad adjuster 110 is depleted, causing the aggregated particles of the polishing pad 1 to be caused by; Aggregation Figure 1B is used to escape through a long-lasting groove. The pad chemically grinds the wafer. Pad: Grinding after the treatment of the regulator. After multiple adjustments and trimming, it is. I don't think about it. The polishing pad 100 is in the particle 122, and a large accumulation has accumulated in the grooves 1〇2:H〇2, and the degree of clothing is reduced. When the wafer 130 is chemically mechanically polished using the polishing pad 1〇〇200914202 pi.apv^u κ) uuztwf. doc/n, the aggregated particles 122 escape from the shallow trenches 102 and move to the polishing pad 1 The surface of the crucible () is between the surface of the wafer 130. As such, these aggregated particles 122 tend to cause micro-scratches on the surface of the wafer 130 in the excessively polished state (1111 (:1: 〇_5), which seriously affects the subsequent process. The flatness and uniformity of the film on the round surface depend on the characteristics of the polishing pad. Therefore, how to effectively control the structure and mechanical properties of the pad is important for wafer surface flattening. The invention provides a polishing pad adjuster which can remove the accumulated residual particles together while trimming the polishing pad. The invention provides a method for adjusting the polishing pad, which helps to improve the accumulation of residual particles on the polishing pad. And can make the life of the polishing pad grow.
C 本發明提出一種研磨墊調節器，其包括底層、至少一 個表面調節單元以及至少—個溝槽清除單元。表面調 j溝槽清除單元皆配置於底叙表面上。此外，表 即早7L與溝槽清除單元為一體成形的構形。 刷狀ΐ本發明之—實施射，上述之溝槽清除單糊如是 明之-實施射，上述之刷㈣ 在本發明之一實施射，上述之溝槽清除單元例如是 200914202 pi.apyju ^3uuztwf.d〇c/n c cC The present invention provides a polishing pad conditioner comprising a bottom layer, at least one surface conditioning unit, and at least one trench cleaning unit. The surface adjustment j groove clearing unit is disposed on the bottom surface. In addition, the table is 7L early and the groove clearing unit is integrally formed. In the present invention, the above-mentioned groove cleaning single paste is implemented in one of the present invention, and the above-mentioned groove removing unit is, for example, 200914202 pi.apyju ^3uuztwf. D〇c/ncc
J 任意之構形’散佈於底層之表面上。 在本發明之一實施例中，上、:主 一 環繞於表面調節單S之關。 除以例如是 在本發明之一實施例中 調節單元例如是呈交錯分布 在本發明之一實施例中 多個鑽石顆粒。 本發明另提出—種研磨墊的調節方法。首先，提供且 L二個i面調節單元與至少—個溝槽清除單元之研磨 節單元與溝槽清除單元是以—體成形的 =配置於此研磨墊調節器之表面。之後，使研磨 磨塾接觸。接著’使研磨塾調節器與研磨，產乙: ^運動’从表_節單元修整研輕，並同時以溝槽清除 早兀刷除研磨墊上的殘留顆粒。 ’ 刷狀ΐ本發明之—實施例中，上述之溝槽清除單元例如是 在本發明之一實施例中 尼龍。 在本發明之一實施例中 多個鑽石顆粒。 在本發明之一實施例中 上述之溝槽清除單元與表面 上述之表面調節單元例如是 上述之刷狀物的材質例如是 上述之表面調節單元例如是 +只挪們τ，上述使研磨墊調節器與研磨 墊產生相對運動的方法例如是分別使研磨墊調節器盛 墊轉動。 … 本發明之研磨墊調節器採用將溝槽清除單元與表面 200914202 pi-apyju ^〇uuitwf.doc/n 調節單元以 除修整研磨録面形變之㊣域，並 ^ ;„面或溝，留顆粒。因此，使用4明 厂可以有效地纽研雜的表面，賭 生微刮痕的情況。 于吋磨日日®發 Ο =，本發明之研磨藝的調節方法，藉由在修整 墊的叫，-併刷除研磨墊上的殘留顆粒，因此 槽中形成聚集顆粒，而能狗更有效地調 工研君塾的制n錢長研磨墊的使用壽命。 舉^上f银和優職料«懂，下文特 牛1 乂“〜例，亚配合所附圖式，作詳細說明如下。 【實施方式】 谰-是依照本發明之—實糊之研赖調節器的底 視不圖2B是沿著圖2A^，線段的剖面示^底 j 體成形之方式配置於底層之表面，而能夠移 明同時參照圖2A與圖2B，研磨墊調節器200可以庳 於各種化學機械研縣置上，用以調節修整研磨塾(未二 墊能夠恢復適當的_度，進而維持高且穩i ^研磨速率。研磨墊調節器細包括底層202、至少一個 表面调節單元2〇4以及至少一個溝槽清除單元Μ6。底層 2 ::是由晴料或是不繡鋼材料所構成之圓盤狀二 體而表面調節單元204與溝槽清除單元2〇6例如是以一 體成形的方式配置於底層202之表面上。 承上述，表面調節單元2〇4例如是用來對研磨墊進行 200914202 piapyjxj ^ju^itwf.doc/n 機械性摩擦，以刮除研磨塾表面上已形變之區域，而恢復 適當的粗糙度。表面調節單元204例如是由多個堅硬顆粒 放佈在底層2〇2表面所構成。而上述之堅硬顆粒可以是鑽 ^顆粒或喊雌，且其例如是_麵或燒結的方式镶 肷於底層202之表面。而構成表面調節單元2〇4之堅硬顆 粒的分布方式可以是呈散亂分布(rand〇m dis杜化说、均 勻分布或是其他的分布形式。 在其他實施例中，表面調節單元204也可以是類鑽石 薄膜(diamond-like carbon, DLC)，且其形成方法例如是以 化學氣相沉積法於底層202上形成一層類鑽石薄膜，接著 再依所需的分布範圍將類鑽石薄膜圖案化。 請繼續參照圖2A與圖2B，溝槽清除單元2〇6例如是 用來將堆積在研磨墊表面或溝槽中_留齡掃除，以達 到徹底清潔研磨墊的效果。溝槽清除單元2〇6例如是以刷 狀物的形式，而整齊排列在底層2〇2表面上。溝槽清除單 兀f6可以是利用尼龍、人造纖維、植物纖維或碳纖維等 巧質進行加工，而形成類似刷毛或刷片。此外，溝槽清除 單元206例如是環繞於表面調節單元204之周圍。亦^ : 溝槽清除單元206是固定在底層202的外圈表面 現環狀分布。 至 在本實施例中，如圖2A所示，表面調節單元2〇4是 由f個堅硬顆粒散佈在底層202表面而呈現實心圓形的^ 布範圍，而溝槽清除單元2〇6則在底層2〇2表面呈現為g 形環狀的分布範圍。此外，溝槽清除單元2〇6環繞在表面 200914202 yi-ayy^yj ‘jwu2twf.d〇c/n 調節單元204的外圈，且上述兩者的分布範圍例如是以一 體成形的形式相鄰接，而在底層202表面上共同構成—個 同心圓的構形。因此’使用研磨墊調節器2〇〇調節處理研 磨墊，可以在利用表面調節單元204刮除修整研磨墊表面 的同時，一併利用溝槽清除單元206掃除研磨墊表面及溝 • 槽中的殘留顆粒，而使研磨墊的使用壽命及效能獲得改善。 值得注意的是，在上述實施例中，是以將溝槽清除單 〇 元206環繞在表面調節單元204的外圍為例來進行說明， 然而本發明並不限於此。在其他實施例中，研磨墊調節器 上的溝槽清除單元可以是以任意的構形而散佈在底層的表 面上。 圖3A至圖3E分別是依照本發明其他實施例之研磨墊 調節器的底視示意圖。 一 請參照圖3A，在研磨墊調節器21〇中，溝槽清除單 元216例如疋圓形的構形。在此實施例中，圓形的溝槽清 (j 除單元216是以對稱均勻配置的方式，與表面調節單元214 ‘ 共同配置在底層212的表面上。當然，在其他實施例中， 賴清除單元216還可以是橢圓形、矩形、三角形、菱形、 鑛齒狀或是其他不規則的任意形狀，且溝槽清除單元216 的配置方式亦可以是以隨機配置的方式任意散佈於底層 212表面。 明參照圖3B，在一實施例中，研磨墊調節器220的 溝槽清除單元226與表面調節單元224也可以是彼此平行 的條狀分布’而交錯排列在底層222的表面上。 200914202 卜〜〜—dtwf.doc/n 如a :=圖3C，研磨塾調節器23〇的底層232表面例 如疋 ^成四等分’而溝槽清除單元说與表面調節單元 則交替的方式配置在各等份的底層232表面上。 主此外’請參照圖3D，在研磨墊調節器24〇中，溝槽 、二除T兀施與表面調節單元撕例如是以——交錯的 ^ "刀別從底層242的幾何中心向底層242的邊緣發散延 伸’而在底層242的表面上形成旋渦狀的分布。J arbitrary configuration 'scatters on the surface of the bottom layer. In one embodiment of the invention, the upper: main surrounds the surface adjustment S. Divided by, for example, in one embodiment of the invention, the conditioning unit is, for example, a plurality of diamond particles that are staggered in one embodiment of the invention. The invention further proposes a method for adjusting the polishing pad. First, the polishing unit and the groove removing unit of the two i-side adjusting units and the at least one groove removing unit are provided on the surface of the polishing pad adjuster. After that, the grinding honing is brought into contact. Then, the grinding 塾 adjuster and the grinding are produced, and the production of B: ^ motion is trimmed from the table _ section, and at the same time, the residual particles on the polishing pad are removed by the groove cleaning. In the embodiment of the present invention, the above-described groove removing unit is, for example, a nylon in an embodiment of the present invention. In one embodiment of the invention a plurality of diamond particles. In one embodiment of the present invention, the groove removing unit and the surface adjusting unit on the surface are, for example, the material of the brush, for example, the surface adjusting unit is, for example, + only τ, the polishing pad is adjusted. The method of generating relative motion between the device and the polishing pad is, for example, to rotate the polishing pad adjuster pad, respectively. The polishing pad adjuster of the present invention adopts a groove clearing unit and a surface 200914202 pi-apyju ^〇uuitwf.doc/n adjusting unit to correct the deformation of the grinding surface, and ^; „face or groove, leaving particles Therefore, the use of 4 Ming factory can effectively simulate the surface of the miscellaneous, smashing the situation of micro-scratches. In the day of the day, the method of adjusting the grinding art of the present invention, by calling the dressing pad , and brush out the residual particles on the polishing pad, so the formation of aggregated particles in the groove, and the dog can more effectively adjust the service life of the n-mould long polishing pad. Understand, the following special cattle 1 乂 "~ example, sub-match with the drawing, as detailed below. [Embodiment] 谰- is a bottom view of the solid paste according to the present invention. FIG. 2B is disposed on the surface of the bottom layer along the cross-sectional view of the line segment of FIG. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, the polishing pad adjuster 200 can be placed on various chemical mechanical research institutes to adjust the dressing grinding 塾 (the second pad can restore the proper _ degree, thereby maintaining high and stable i Grinding rate. The polishing pad conditioner comprises a bottom layer 202, at least one surface conditioning unit 2〇4, and at least one groove removing unit Μ6. The bottom layer 2: is a disk shape composed of a clear material or a stainless steel material. The two-body surface adjusting unit 204 and the groove removing unit 2〇6 are disposed on the surface of the bottom layer 202, for example, in an integrally formed manner. In the above, the surface adjusting unit 2〇4 is used, for example, to perform a polishing pad on 200914202 piapyjxj ^ Ju^itwf.doc/n mechanical friction to scrape the deformed area on the surface of the abrasive raft to restore proper roughness. The surface conditioning unit 204 is, for example, a plurality of hard particles placed on the surface of the bottom layer 2〇2 Constituting The hard particles may be drilled or smashed, and they are inlaid on the surface of the bottom layer 202, for example, in a slab or in a sintered manner. The hard particles constituting the surface conditioning unit 2〇4 may be distributed in a scattered manner ( In other embodiments, the surface conditioning unit 204 may also be a diamond-like carbon (DLC), and the formation method thereof is, for example, chemistry. The vapor deposition method forms a diamond-like film on the underlayer 202, and then patterns the diamond-like film according to the desired distribution range. Referring to FIG. 2A and FIG. 2B, the trench cleaning unit 2〇6 is used, for example, to Stacked on the surface or groove of the polishing pad to remove the effect of thoroughly cleaning the polishing pad. The groove removing unit 2〇6 is, for example, in the form of a brush and arranged neatly on the surface of the bottom layer 2〇2. The groove removing unit f6 may be processed by using a material such as nylon, rayon, plant fiber or carbon fiber to form a similar bristles or brush sheets. Further, the groove removing unit 206 is, for example, surrounded by surface adjustment. Around the node unit 204. Also, the groove removing unit 206 is fixed to the outer ring surface of the bottom layer 202 and is now annularly distributed. To this embodiment, as shown in Fig. 2A, the surface adjusting unit 2〇4 is composed of f. The hard particles are scattered on the surface of the bottom layer 202 to exhibit a solid circular shape, and the groove removing unit 2〇6 has a g-shaped annular distribution on the surface of the bottom layer 2〇2. Further, the groove removing unit 2 〇6 surrounds the surface 200914202 yi-ayy^yj 'jwu2twf.d〇c/n The outer ring of the adjustment unit 204, and the distribution ranges of the two are adjacent, for example, in an integrally formed form, and on the surface of the bottom layer 202 Together constitute a concentric configuration. Therefore, the polishing pad can be adjusted by using the polishing pad adjuster 2, and the surface of the polishing pad can be removed by the surface adjusting unit 204, and the groove cleaning unit 206 can be used to remove the surface of the polishing pad and the residue in the groove. Granules, which improve the life and performance of the polishing pad. It is to be noted that, in the above embodiment, the description is made by taking the groove clearing unit 206 around the periphery of the surface adjusting unit 204 as an example, but the present invention is not limited thereto. In other embodiments, the groove clearing unit on the polishing pad adjuster can be interspersed on the surface of the bottom layer in any configuration. 3A through 3E are bottom plan views of a polishing pad adjuster in accordance with other embodiments of the present invention, respectively. Referring to Figure 3A, in the pad conditioner 21, the groove clearing unit 216 is, for example, a circular configuration. In this embodiment, the circular groove clearing (j division unit 216 is disposed in a symmetrically uniform configuration on the surface of the bottom layer 212 in conjunction with the surface conditioning unit 214'. Of course, in other embodiments, The unit 216 can also be elliptical, rectangular, triangular, diamond, ore-shaped or any other irregular shape, and the groove clearing unit 216 can be disposed in a random arrangement on the surface of the bottom layer 212. Referring to FIG. 3B, in an embodiment, the groove removing unit 226 and the surface adjusting unit 224 of the polishing pad adjuster 220 may also be arranged in a stripe pattern parallel to each other and staggered on the surface of the bottom layer 222. 200914202 ~—dtwf.doc/n If a:=Fig. 3C, the surface of the bottom layer 232 of the polishing crucible adjuster 23〇 is, for example, divided into four equal parts', and the groove removing unit is arranged alternately with the surface adjusting unit in each manner. On the surface of the bottom layer 232. Mainly, please refer to FIG. 3D. In the polishing pad adjuster 24, the groove, the second dividing and the surface adjusting unit are torn, for example, by interlacing. bottom 242 geometric center 242 of the bottom edge of the diverging extension 'spiral is formed on the surface of the underlying distribution of 242.
請參照圖3E，在研磨墊調節器25()中 256例如是在底層252的表面上形成連續的螺旋狀分Γ 而表面調節皁兀254則例如是填滿剩餘的底層252表面。 特別說明的是’如圖Μ至圖SE所示，表面調節單元 214、224、234、244、254 與溝槽清除單元 216、226、236、 246、256皆是以-體成形之構形分別配置於底層212、 222、232、242、252的表面上，因此能夠移除修整研磨墊 表面’並同時掃除殘留顆粒，進而改善研磨墊的研磨特性， 並延長研磨塾的使用壽命。 此外’研磨墊調&的表面調節單元與溝槽清除單元 的式樣、材質、數量及分布方式並不舰於上述實施例中 所述。本發赚了上述實_之外，尚具有其他的實施型 態，只要研磨墊調節器的表面調節單元以及溝槽清除單元 符合一體成形之構形即可，熟知本領域之技術人員當可知 其應用及變化，故於此不再贅述。 接著，將繼續說明利用上述之研磨墊調節器應用於本 發明之研磨墊的調節方法。為了詳述本發明之研磨塾的調 11 200914202 \jv.a.yp^\j z-jvv^twf.doc/nReferring to Figure 3E, in the polishing pad conditioner 25 () 256, for example, a continuous helical branch is formed on the surface of the bottom layer 252 and the surface conditioning saponin 254 is, for example, filled with the remaining surface of the bottom layer 252. Specifically, as shown in FIG. 8 to FIG. SE, the surface adjusting units 214, 224, 234, 244, and 254 and the groove removing units 216, 226, 236, 246, and 256 are respectively formed in a body-shaped configuration. Disposed on the surface of the bottom layer 212, 222, 232, 242, 252, the surface of the polishing pad can be removed and the residual particles can be removed at the same time, thereby improving the polishing characteristics of the polishing pad and prolonging the service life of the polishing pad. Further, the pattern, material, quantity, and distribution pattern of the surface conditioning unit and the groove removing unit of the "polishing pad" are not described in the above embodiments. In addition to the above, there are other embodiments in which the surface adjustment unit of the polishing pad conditioner and the groove removing unit conform to the integrally formed configuration, and those skilled in the art will recognize that Applications and changes, so I won't go into details here. Next, the adjustment method of applying the polishing pad conditioner described above to the polishing pad of the present invention will be further explained. In order to detail the adjustment of the grinding boring of the present invention 11 200914202 \jv.a.yp^\j z-jvv^twf.doc/n
節方法，以下將利用上述圖2A 為例來進行說明。-下之㈣是絲 =此項技術者能夠據以實施，但並非用以限定本發= 執J „本發明—實施狀研磨墊器處理研卢 ，=面示』。圖5為依照本發明—實施例之^ 郎方法的步驟流程圖。 墊調 請同時參照圖4與圖5，步驟S510,提供具有至小一 個表面調節單元204與至少一個溝槽清除單元2G = ，調節器200。溝槽清除單元施例如是環繞在表々 單兀204的外圈’且表面調節單元2〇4與溝槽清除單元烈^ 例如是以一體成形的方式配置於底層2〇2之表面。 步驟S520 ’使研磨墊調節器200的表面調節單元2以 與溝槽清除單元206與研磨墊400接觸。 接著，使研磨墊調節器200與研磨墊4〇〇分別依特定The section method will be described below using FIG. 2A as an example. - The next (four) is the wire = the person skilled in the art can implement it, but it is not used to limit the hair = the invention - the invention - the implementation of the polishing pad treatment research, = face". Figure 5 is in accordance with the present invention - Flowchart of the steps of the method of the embodiment. The pad is simultaneously referred to FIG. 4 and FIG. 5, and step S510 is provided to provide a surface adjustment unit 204 and at least one groove cleaning unit 2G = , the regulator 200. The groove clearing unit is, for example, an outer ring that surrounds the surface unit 204, and the surface adjusting unit 2〇4 and the groove removing unit are disposed on the surface of the bottom layer 2〇2, for example, in an integrally formed manner. Step S520' The surface conditioning unit 2 of the polishing pad conditioner 200 is brought into contact with the groove cleaning unit 206 and the polishing pad 400. Next, the polishing pad conditioner 200 and the polishing pad 4 are respectively made specific
L 方向而轉動，亦即使互相接觸的研磨墊調節器2〇〇與研磨 墊400產生相對運動，以調節研磨墊4〇〇。研磨墊^節器 200與研磨墊400的旋轉方向例如是相同或不相同。 磨墊調節器200與研磨墊400進行相對運動的時候，旋轉 的表面調節單元204例如是會修整移除研磨墊4〇〇表面上 發生形變的區域。同時，溝槽清除單元2〇6例如是^刷除 在研磨墊400表面上或是積聚在其溝槽4〇2中的殘^顆2 41〇(步驟 S530)。 广 值得一提的是，經過研磨墊調節器2〇〇的調節之後， 12 200914202 ^^vitwf.doc/n 漿的1Ϊ2，!侧形1具有適當粗缝度的表面而恢復對研 錄留船I ’亚叫清轉多餘的殘留顆粒41G而避免 的堆積麵槽402中。因此，使用調節後 定的研廚Φ玄s曰圓進仃化學機械研磨，能夠提供高且穩 =研磨速率，且可有效地避免晶圓上出現微刮痕的情況 〇 ㈣述，本發明之研磨塾調節器藉由在其底房表面 利節單7^與溝槽清除單元，而能夠在 調即早兀刮除研磨墊表面的同時，亦可以利用溝 早兀掃除在研磨塾表面或是溝槽中的殘留顆粒。因 麻執士用本發明之研磨塾調節器調節研磨塾，可有助於研 f恢復適當的粗糙度並有效地清除研磨塾上的殘留顆 粒’以防止待研磨晶圓發生微刮痕的情況。 、 再者’本發明之研磨墊的調節方法採㈣時進行修整 取隹堆以及清除殘留顆粒的步驟，用以避免殘留顆粒 水木堆積在研磨塾的溝槽中。如此一來，本發明之 =確保經調節後的研磨m延長研磨墊的使用^ π，進而避免刮傷晶圓的情況發生。 八另方面，本發明能夠有效地延長研磨墊的使用妾 π而減少研磨塾的汰換率’因此可有助於降低設備成本。 〜雖然本發明已崎佳實_揭露如上，然其並非用以 限疋本發明，任何所屬技術領域巾具有通S知識者 =^發明之精神和範圍内，當可作些許之更動與潤飾， 發明之保魏υ當視後附之申請專魏圍所界定者 13 200914202 -/ yj w^tAvf.doc/n 為準。 【圖式簡單說明】 圖1A是以習知之研磨墊調節器處理研磨墊的剖面示 意圖。 圖1Β是使用經由習知之研磨墊調節器處理後之研磨 墊對晶圓進行化學機械研磨的剖面示意圖。 圖2Α是依照本發明之一實施例之研磨墊調節器的底 視示意圖。 圖2Β是沿著圖2Α中Ι-Γ線段的剖面示意圖。 圖3Α至圖3Ε分別是依照本發明其他實施例之研磨墊 調節器的底視示意圖。 圖4為利用本發明一實施例之研磨墊調節器處理研磨 墊的剖面示意圖。 圖5為依照本發明一實施例之研磨墊調節方法的步驟 流程圖。 【主要元件符號說明】 100、400 :研磨墊 102、402 :溝槽 110、200、210、220、230、240、250 :研磨墊調節 器 112、202、212、222、232、242 ' 252 :底層 114 :鑽石顆粒 14 200914202 ^ ^ v •wtwf.doc/n 120、410 :殘留顆粒 122 :聚集顆粒 130 :晶圓 140 :微刮痕 204、214、224、234、244、254 :表面調節單元 206、216、226、236、246、256 :溝槽清除單元 S510、S520、S530 :步驟The L-direction is rotated, and even if the polishing pad adjusters 2, which are in contact with each other, are moved relative to the polishing pad 400, the polishing pad 4 is adjusted. The direction of rotation of the polishing pad 200 and the polishing pad 400 is, for example, the same or different. When the sanding pad conditioner 200 is moved relative to the polishing pad 400, the rotating surface adjusting unit 204 is, for example, a region where the surface of the polishing pad 4 is deformed to be deformed. At the same time, the groove removing unit 2〇6 is, for example, brushed off the surface of the polishing pad 400 or accumulated in the groove 4〇2 thereof (step S530). It is worth mentioning that after the adjustment of the polishing pad adjuster 2〇〇, 12 200914202 ^^vitwf.doc/n slurry 1Ϊ2,! Side shape 1 has a proper rough seam surface and resumes the study of the ship I'm called to remove excess residual particles 41G and avoid it in the stacking face groove 402. Therefore, the use of the adjusted grinding machine Φ 曰 曰 曰 round 仃 chemical mechanical polishing, can provide high and stable = polishing rate, and can effectively avoid the occurrence of micro scratches on the wafer 四 (4), the present invention The grinding crucible adjuster can remove the surface of the polishing pad at the same time as the surface of the polishing pad by adjusting the surface of the bottom surface of the bottom surface of the substrate, and can also use the groove to sweep the surface of the polishing pad or Residual particles in the grooves. Because Ma Shishi adjusts the grinding crucible with the grinding crucible adjuster of the present invention, it can help to restore proper roughness and effectively remove residual particles on the grinding crucible to prevent micro-scratches on the wafer to be polished. . Further, the method for adjusting the polishing pad of the present invention is carried out by taking the step of trimming the stack and removing the residual particles in order to prevent the residual particles from accumulating in the grooves of the polishing crucible. In this way, the invention of the invention ensures that the adjusted polishing m extends the use of the polishing pad to avoid scratching of the wafer. On the other hand, the present invention can effectively extend the use of the polishing pad 妾 π and reduce the replacement rate of the polishing crucible', thereby contributing to a reduction in equipment cost. ~ Although the present invention has been described above, it is not intended to limit the invention, and any technical field of the art has the spirit and scope of the invention, and when some changes and refinements can be made, The inventor of Wei Wei’s application for the application of Wei Wei is defined by 13 200914202 -/ yj w^tAvf.doc/n. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a schematic cross-sectional view of a polishing pad treated by a conventional polishing pad conditioner. Figure 1 is a schematic cross-sectional view showing the chemical mechanical polishing of a wafer using a polishing pad treated by a conventional polishing pad conditioner. Figure 2A is a bottom plan view of a polishing pad conditioner in accordance with an embodiment of the present invention. Figure 2 is a schematic cross-sectional view along the Ι-Γ line segment of Figure 2 . 3A through 3B are bottom plan views of a polishing pad adjuster in accordance with other embodiments of the present invention, respectively. Fig. 4 is a schematic cross-sectional view showing the treatment of a polishing pad by a polishing pad adjuster according to an embodiment of the present invention. Figure 5 is a flow chart showing the steps of a polishing pad adjustment method in accordance with an embodiment of the present invention. [Main component symbol description] 100, 400: polishing pad 102, 402: grooves 110, 200, 210, 220, 230, 240, 250: polishing pad adjusters 112, 202, 212, 222, 232, 242 '252: Bottom layer 114: diamond particles 14 200914202 ^ ^ v • wtwf.doc/n 120, 410: residual particles 122: aggregated particles 130: wafer 140: micro-scratches 204, 214, 224, 234, 244, 254: surface conditioning unit 206, 216, 226, 236, 246, 256: groove clearing unit S510, S520, S530: steps
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