TW200913126A - Substrate measuring stage - Google Patents

Substrate measuring stage Download PDF

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Publication number
TW200913126A
TW200913126A TW097134692A TW97134692A TW200913126A TW 200913126 A TW200913126 A TW 200913126A TW 097134692 A TW097134692 A TW 097134692A TW 97134692 A TW97134692 A TW 97134692A TW 200913126 A TW200913126 A TW 200913126A
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TW
Taiwan
Prior art keywords
substrate
support
measurement
measuring
mounting plate
Prior art date
Application number
TW097134692A
Other languages
Chinese (zh)
Inventor
Masao Mizuta
Motoaki Hamada
Original Assignee
Horiba Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Horiba Ltd filed Critical Horiba Ltd
Publication of TW200913126A publication Critical patent/TW200913126A/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • A Measuring Device Byusing Mechanical Method (AREA)

Abstract

To improve position reproducibility of support pins 3 and to prevent a displacement of a substrate in a horizontal direction during movement of a position of the substrate between a position on a mounting board 2 and a position on the support pins 3. A substrate measuring stage 1 used for a curve measuring system 7 measuring a curve of the substrate W and an ordinary measuring system 6 measuring each of or one of a physical quantity and a chemical quantity of the substrate W other than the curve, includes the mounting board 2 movable between an ordinary measurement position P1 for the ordinary measuring system 6 and a retreat position P2 away from and downward of the ordinary measurement position P1; the plurality of support pins 3 insertable into through-holes 21 provided in the mounting board 2 and fixed to a curve measurement position P3 for the curve measuring system 7; and a drive mechanism vertically moving the mounting board 2 between the ordinary measurement position P1 and the retreat position P2. The curve measurement position P3 is set between the ordinary measurement position P1 and the retreat position P2.

Description

200913126 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種基板測 曲的翹曲測定系及使用於測 工作台,使用於測定基板之翹 通常測定系。 、涊曲以外之物理量及/或化學量之 【先前技術】 此種基板測定用工作台,勺人 支持銷,以貫通該載置板之載置板,載置基板;及多數 移動,或使似板及支持銷兩將载置板固定並使支持銷 突出。 財移動,而使支制從載置板之下 位置之再 現性細數支持銷高度 銷之高度位置,由於使各支持 原因在於:載置板上之基板與支目同高度。 膜厚測定系細測定系之各焦以 支持銷支持後,調節支持鎖高度,並調節到妓在^ 然而’如上所述,有以τ問題:於移載時基板於水平方向偏 200913126 離’又’使支持鎖移動的高度再現性差。 丨f利文獻1] 3本特開平6-97269號公報 [專利文獻2]日本特開2006-332587號公報 【發明内容】 (發明欲解決之問題) 曲測結果發現:即脑 對於般結果發生辟敎之基板之4下方偏離,亦不會 載置板與支制間賴時,提升,及使基板在 (解決問題之方式) 方止基板之水平方向偏離。 二學量之通常測定系;其之含勉=== $ ’可以在前述通常測定系之通常測 多數支持構件,具支持前述之退職置之間移動; 述載置板之移動,固定在前支持端無關於前 退避位置之間。 置° 又疋於别述通常測定位置及前述 2構:j細從支軸牛_ ;念 用工作台小型化並且廉價。 上下移動機構,能使基板測定 就具體動作而言’於前述載置板位在前述通常測定位置,且 200913126 ίίΰϊίίί狀^^載置板從前述通常測定位置往 前述載置板之頂面突出而支持前述基板。=置板之貝通孔,從 板位於前述退避位置且前述支持持,於前述巧 W述載置板從前述退避位置往前述通常測位^ ^狀態’隨著 鎖通過前述載置板之貫通孔,從前g’所述支持 固持前述基板。 j狀置板之頂面没人,前述載 裳的比較通㈣定之敎結果與_測定之_处果睥 二 =r__ 測定士 ‘測定位置之 古姓對於每—測定對象瓣支持構件之高度,希望每-財 支持=,具備調節該支持構件高度之高度調節機I月』述 盤。載置板之具體的實施雜,可考慮吸附並_前述基板之吸 右要使前述基板不因為慣性而從前 動,結果=^費= ί;ΐ部為吸附並固持前述基板者。 之相同、;立ί,基板載置在前述載置板 時以所需I #㈣;# ·&gt; ί種類A小之基板容易進行㈣測定且同 之聲塑’使餘^ 持構件支持基板’並減小對於趣曲測定 丨土板之科減少’可以利用多數支持構件構成支持大 “大二件群’將支持小基板之支持構件群配置在支 ^叙位置’ μ在支持域板之支雜件群德曲測定位置 通吊測衫、之具體實施祕,可考慮用_定基板上之膜厚 200913126 的橢圓偏光計 又 ,^由將本發明之基板測定用工作台使用在基板測定梦 置,能以尚精度及高解析能力測定基板。 、、 時,為了使前述基板因為前述支持構件接觸所致產 ίίϊίϋί等減至最小限度,可使前述支持構件為固持前述 周者。在於基板之外周部為不成為晶片,是要去 ^勿,因此,即使產生損傷或污染亦不容易成為問題。 偏離為基板之外周部’同時防止因為慣性在水平方向 的突出部突^者别核持構件為使從其域端接觸述基板側面 ί:ΐ::ί 貝斜。基板若傾斜,咖測定時基 亞化絲合·缝果,造輪曲之測定精度 i,可包含埶變/現在前述基板之龜曲測 為了阶rίί減低機構’使則述支持構件之熱變形減低。 減低熱變形邊外部環境與支持構件接觸,並 圍之遮斷壁。' '、、、’〜y減低機構具備包圍前述支持構件周 曲測;時周支持構件之熱變形並且使翹 溫之加熱器。 寺構件口持在固定較周邊外部環境為高 (發明之效果) 防止提升支持構件之位置聽性,並 離。糖板與支持構件間移_,基板在水平方向之偏 【實施方式】 (實施發明之最佳形態) 10 200913126 以下關於本發明之—實施形態,參照圖式説明。又,圖1為 基板測定,工作台1之示意圖、圖2為載置板2之俯視圖。圖3 為基板測定用工作台1之動作圖、圊4顯示使用了基板測定用工 作台1之位置再現性實驗結果表。 〈裝置構成〉 本實施形態之基板測定用工作台卜係使用於測定基板w之翹 曲的翹曲j則定系7,及使用於測定該基板?之翹曲以外之物理量及 /或化學$的通常測定系6者。基板w,可考慮平面顯示器(FpD) 用之玻璃基板或矽基板為代表之半導體晶圓等。又,基板測定裝 置,由,板測疋用工作台1、通常測定系6及翹曲測定系了構成。 ^實,形態之中’通常測^系6,係用於測錄板?之趣曲以 ^物理減/或化學量中’賴於基板w表面之膜厚、基板之厚 橢圓偏綺。圖1中,61為雷射峨白色光源, 體型又包用例如雷射變位計,其機器構成,係-S感二雷射光源等構成之光照射部,及位置 ,’二數支持構件3,可插通設於前述載置板2之 門移 定在前述翹曲測定系7之翹曲測宗仂罢pq 貝k孔21,固 使前述載置板2在^_ 4, 升降移動。再者,㈣降織及Μ退雜置P2之間 即π輛柯水平方向 在ΧΥ方向變化。 動轉I使基板之測定位置 、下°兄月裁置板2、支持構件3及升降移動機構4。 200913126 6測定該基板 定之退避位置P2之卩^ 位置P1往錯直方向分開而設 圓形(參照圖2),树卿g之載置板2,平面視成 在此,「通等ΐ他形狀。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a warpage measuring system for measuring a substrate and a warpage measuring system for measuring a substrate. [Prior Art] A substrate for measuring a substrate, a scaffold support pin, a mounting plate penetrating the mounting plate, and a substrate; and a plurality of movements or The plate and the support pin both fix the mounting plate and protrude the support pin. The movement moves, and the reproducible number of the support from the position below the mounting plate supports the height position of the pin height pin. The reason for the support is that the substrate on the mounting plate is at the same height as the branch. The film thickness measurement system measures the cokes of the system to support the pin support, adjusts the height of the support lock, and adjusts to the 妓. However, as described above, there is a problem of τ: when the substrate is transferred, the substrate is horizontally inclined at 200913126. Moreover, the height reproducibility of the support lock movement is poor.专利 利 利 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Deviation from the bottom of the substrate of the smashing, does not place the board and the support between the lifting, lifting, and the substrate in the (solving the problem) to stop the horizontal direction of the substrate. The usual measurement system of the second amount; the 勉=== $ ' can be used to move between the majority of the support members of the usual measurement system, and to support the aforementioned resignation; the movement of the loading plate is fixed The support side is not related to the front backoff position. In addition, the normal measurement position and the above-mentioned two configurations are described: j is finer from the support shaft, and the workbench is miniaturized and inexpensive. The up-and-down moving mechanism enables the substrate to be measured in a specific operation. The mounting plate is positioned at the normal measurement position, and the mounting plate protrudes from the normal measurement position toward the top surface of the mounting plate. The aforementioned substrate is supported. = a pass-through hole for the plate, the slave plate is located at the retracted position and the support is held, and the mounting plate is moved from the retracted position to the normal positioning position as the lock passes through the through hole of the mounting plate The support of the aforementioned substrate is supported by the support of the previous g'. There is no one on the top surface of the j-shaped plate, and the above-mentioned load-bearing ones are compared with each other. (4) The result of the determination is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ I hope that every financial support =, with the height adjustment machine I adjust the height of the support member. For the specific implementation of the mounting plate, it is conceivable that the substrate is sucked and the substrate is not moved forward by the inertia. The result is that the substrate is adsorbed and held by the substrate. The same is the same as that; when the substrate is placed on the above-mentioned mounting plate, the required I #(4); # ·&gt; 种类A small substrate is easy to perform (4) and the same as the sound plastic 'to make the support member support substrate 'And reduce the reduction of the slabs for the measurement of the slabs' can be supported by the majority of support members to support the large "senior group" to support the support group of small substrates in the support position 'μ in the support domain board For the specific implementation of the measurement of the position of the miscellaneous pieces, the ellipsometer of the film thickness of 200913126 on the substrate can be considered, and the substrate for measuring the substrate of the present invention can be used for the measurement of the substrate. In the case of the dream, the substrate can be measured with a high precision and a high resolution. In order to minimize the production of the substrate by the contact of the support member, the support member can be held for the aforementioned week. If the outer circumference is not a wafer, it is necessary to go to the door. Therefore, even if damage or contamination occurs, it is not easy to become a problem. The deviation is the outer circumference of the substrate while preventing the protrusion in the horizontal direction due to inertia. The member of the protrusion is not to be inspected so that the side of the substrate is in contact with the side of the substrate ί:ΐ::ί oblique. If the substrate is tilted, the measurement of the base is determined by the basis of the silk, and the measurement accuracy of the wheel is determined. The tampering/now turf curve of the aforementioned substrate may be included. In order to reduce the mechanism, the thermal deformation of the supporting member is reduced. The external environment of the heat-deformed edge is reduced in contact with the supporting member, and the wall is blocked. ', The '~y reduction mechanism has a circumferentially curved test that surrounds the support member; the heater is thermally deformed at the time of the support member and the heater is tilted. The temple member is held at a higher position than the peripheral external environment (the effect of the invention). The position of the member is audible, and the distance between the sugar plate and the supporting member is shifted, and the substrate is offset in the horizontal direction. [Embodiment] (Best Mode for Carrying Out the Invention) 10 200913126 Hereinafter, the embodiment of the present invention will be described with reference to the drawings. 1 is a schematic view of the substrate 1, and FIG. 2 is a plan view of the mounting plate 2. FIG. 3 is an operation diagram of the substrate measuring table 1, and FIG. 4 shows a substrate measuring table 1 used. Position reproduction The result of the test results. <Device configuration> The substrate measurement workbench according to the present embodiment is used for measuring the warpage of the warpage of the substrate w, and is used for measuring the physical quantity other than the warpage of the substrate. Or the normal measurement system of chemical $. For the substrate w, a semiconductor wafer represented by a flat panel display (FpD) or a semiconductor wafer represented by a germanium substrate can be considered. Further, a substrate measuring device, a plate measuring and working table 1. Normally, the measurement system 6 and the warpage measurement system are constructed. ^ Real, in the form of 'normal measurement system 6, is used for the recording board? The interesting music is ^ physical reduction / or chemical quantity 'depends on the substrate The film thickness of the w surface and the thickness of the substrate are elliptically biased. In Fig. 1, 61 is a laser 峨 white light source, and the body shape is also covered with, for example, a laser displacement meter, the machine is composed of a system-S sense two laser light source, and the like. The light-irradiating portion and the position, the 'two-numbered support member 3, the door that can be inserted into the mounting plate 2 is moved to the warpage measuring system of the warpage measuring system 7 to stop the pq shell k hole 21, solid The mounting plate 2 is moved up and down at ^4. Furthermore, (4) between the weaving and the retreating P2, that is, the horizontal direction of the π ke is changing in the ΧΥ direction. The rotation I is used to measure the position of the substrate, the lower half-moon cutting plate 2, the support member 3, and the lifting and lowering mechanism 4. 200913126 6 Measure the position of the retracted position P2 of the substrate. The position P1 is set to a circular shape in the wrong direction (see Fig. 2). The board 2 of the tree qing g is placed here, and the plane is viewed here. .

時,通常測定系6可^於載置板2上載置有基板W 面位置。亦即,位於通常“位置^定之載置板2之頂 時,通常測定系6之光照射部61魅有基板W 狀態。 之焦點成為位在基板W表面上之In this case, the measurement system 6 can normally mount the substrate W surface position on the mounting plate 2. That is, when the top of the mounting plate 2 is normally positioned, the light illuminating portion 61 of the measuring system 6 is usually in the state of the substrate W. The focus becomes on the surface of the substrate W.

又,退避位置Ρ2」,係從載置板2之了f AIn addition, the retracted position Ρ2" is the f A from the mounting plate 2.

往下方分開既定距離之位置,GJ·2 f貝面從通常測定位置PI 測定位置P3更為下方的位置。H置頂面成為較後述趣曲 由支持構件3所支持之基板w 距離之位置,為即使 盤。再者,Ltri圖置基心並固持之真空吸 相對向之位置,與支持構件數斤不,在與後述支持構件3 =態Μ對於載置板2:應==貫 Ρ1 及退避位置?2k4 J 支持構件3,係為了進行氣曲 載置板2移動為獨立,其支前二,支持基板W者,無關於 f本實施形態之支持構件 定 為她曲測定位置 台基台100,另一端之前端利用後構件而固定在工作 之南度,以使得位在趣曲測定位置⑸广周即機構5調節支持鎖3 l曲測疋位置P3」意指,當支持銷3之支持端上載置 12 200913126 有^板w時,龜曲測定系7可測定該基板w 位置。本實施形態中,支持端為支 寺^之支持蠕 位置P3於支持鐵3之前端上配置有 =2此龜_定 可測定該基板W之支持鎖3之前端位置。並^;,曲測定系7 設定在載置板2之通常測定位置ρι與 ^ =位置P3, 置板,通㈣定位置pi麵触置P2 d。於使载 測定%,由於支持銷3之高度不變化,多動並進仃一連串 測定時,趣曲測定位置P3距工作台基台_ 連串 一定。 〜呵度不叆化,而為 此時,通常敎位置P1 測定 質上不影響龜曲測定之範圍,由與龜 3差,為實 又,支持銷3如圖i所示,叫加。 所示,本實施形態中,設置有3根;面形狀’如圖2 板2之中心具-致之重心的正三角形頂點 ^位在與前述載置 著載置板2之升降移動,而插通設置2之_^ I為隨 於各支持鎖3之下端,設有用㈣貝通孔21者。 度調節機構5。 關於♦較持们之高度的高 高度調節機構5 ’係由以下所構成:外 之下端隔著六角部53而連續設置内螺纹士文巧,於支持銷3 100。内螺紋部52,設於立_工作台1'/ 2 ’故於工作台基台 前述六角部53旋轉’將外螺紋部5丨纟 ^構件。並且,使 銷3之前端上下調節。 系口於内螺紋部52,將支持 具體而言,使用高度調節機構5,調節 通常測定位置P1往下位置,以不影響麵曲測定^Ί,使從 態中為通常測定位置P1起4〇〇//111下之位置。之程度,本實施形 升降移動機構4,係設於工作台基么° 高度相對於工作台基台咖變化 σ,= ^述載置板2之 常測定位置P1及退雜置p2之間升㈣餘板2於通 13 200913126 △具體而言’升降移動機構4包含:第1線性引導件41,在工 作台基台γο上沿水平方向設置;楔構件42,設於第丨線性引導 件41上,旎水平方向移動;驅動機構犯,設於工作台基台1〇〇, f楔構件42進退移動;第2線性引導件44,於前述楔構件42之 f斜面沿著傾斜方向設置;第3雜引導件45,於前述工作台基 1上设置於鉛直方向;升降構件46,設於前述第2線性引導 =4及前述第3線性引導件45上,可在錯直方向移動;樓構件The position of the predetermined distance is separated downward, and the GJ·2 f shell surface is located below the normal measurement position PI measurement position P3. The top surface of the H is a position closer to the substrate w supported by the support member 3, which is a disk. Furthermore, the position of the vacuum suction relative to the base of the Ltri diagram is not more than that of the support member. In the support member 3 = state described later, the mounting plate 2 should be == Ρ1 and the retracted position? 2k4 The J support member 3 is for the purpose of moving the vibrating plate 2 to be independent, and the front support member 2 supports the substrate W. The support member of the present embodiment is defined as the position measuring table base 100 and the other end. The front end is fixed to the south of the work by the rear member so that the position is at the interesting measurement position (5), that is, the mechanism 5 adjusts the support lock 3 l. The position of the test pin P3 means that when the support end of the support pin 3 is placed 12 200913126 When there is a plate w, the turtle curvature measurement system 7 can measure the position of the substrate w. In the present embodiment, the support end is the support creep position P3 of the branch, and the front end of the support iron 3 is placed at the front end of the support iron 3 to determine the position of the front end of the support lock 3 of the substrate W. And the curve measuring system 7 is set at the normal measurement position ρι and ^ = position P3 of the placing plate 2, and the plate is placed, and the P2 d is touched by the pi surface at the fixed position (4). When the load is measured in %, since the height of the support pin 3 does not change, and the multi-moving is performed in a series of measurements, the interesting measurement position P3 is constant from the table base _. The degree of 呵 呵 , , , , , , , 此时 此时 此时 此时 P P P P P P P P P P P P P P P P P P P P P P P P P P P P P P P P P P As shown in the present embodiment, three are provided; the surface shape 'the equilateral triangle apex of the center of the center of the plate 2 as shown in Fig. 2 is moved up and down with the mounting plate 2, and the insertion is performed. The _^ I of the setting 2 is the lower end of each of the support locks 3, and the (four) beacon hole 21 is provided. Degree adjustment mechanism 5. The height adjustment mechanism 5' of the height of the holders is constituted by the fact that the outer lower end is continuously provided with the internal thread Shi Wenqiao via the hexagonal portion 53 to support the pin 3 100. The female screw portion 52 is provided on the vertical table 1'/ 2' so that the hexagonal portion 53 is rotated on the table base. The male screw portion 5 is a member. Also, the front end of the pin 3 is adjusted up and down. The thread is connected to the female screw portion 52, and specifically, the height adjusting mechanism 5 is used to adjust the normal measurement position P1 downward position so as not to affect the surface curvature measurement, so that the slave state is the normal measurement position P1. 〇 // The location under 111. To the extent that the lifting and lowering mechanism 4 of the present embodiment is set at the base of the table, the height is changed with respect to the table base σ, and the normal measurement position P1 and the depreciation p2 of the mounting plate 2 are increased. (4) The remaining plate 2 is in the pass 13 200913126. Specifically, the 'lifting and lowering mechanism 4 includes: the first linear guide 41 is disposed in the horizontal direction on the table base γο; and the wedge member 42 is disposed on the second linear guide 41. The 旎 is moved in the horizontal direction; the driving mechanism is disposed on the table base 1 〇〇, the f wedge member 42 moves forward and backward; the second linear guide 44 is disposed along the inclined direction of the f slope of the wedge member 42; The miscellaneous guide 45 is disposed in the vertical direction on the table base 1; the elevating member 46 is disposed on the second linear guide 4 and the third linear guide 45, and is movable in a wrong direction;

2 46 ^ ,III 弓y件之有^線性將件44之設制,輕輕著第2線性 之没f横構件42的設置面的角度’或者將升降構件46 之:之設置面,調整為沿著第2線性引:私 前巧卜第2、第3線性引導件4W4 導轨,由長尺狀之第卜f 2、第3軌道41 =又又滾子 於該軌道4H、44卜451滑動自如地跨架而成 及相對 滑動件412、442、452所構成。巧而成的弟卜第2、第3 楔構件42 ’係將由後述驅動機構43所受 為熱直方向之力的構件,如圖(所示^之;^千方向的力變換 ί 1滑動件412上。楔構件42二面性料件41之 刖端部)傾斜下降的傾斜面。又,樓構件 /σ者進行方向(朝向 構件==㈣ 構者,包含:驅動部431,利用支架固 係使用滾珠螺桿機 珠螺桿輛432,藉由聯結器旋轉自如'地連作台基台100上;滾 軸;滾珠螺桿螺帽(未圖示),設於楔構件σ 5亥驅,部431之輸出 432所螺合。驅動部431,可考量 ,被前述滾珠螺桿軸 鈕者。 ’進馬達等馬達或手動用旋 藉由像此種構造,以驅動部431伟认, 使輪出轴旋轉,並且藉由聯 14 200913126 結器使滾珠螺桿軸432旋轉既定角度,楔 台⑽在水平方向(X軸方向)進行相對=件42相對於工作台基 第2線性引導件44,係在楔構=傾 面之傾斜方向設置。 之傾斜面上,沿著該傾斜 升降構件46,係於錯直方向(z轴方 士 構件本體461 ’固定於第3線性引導件奶 、、有:升降 設於該升降構件本體461,調節角度,使節機構462, 時之升降構件46之設有第2線性引導件&amp;的、、、^生引導件45 :=之第2線性咖之固定二 升降構件本體461,係安裝在前述第3線 導件44;猶部,卿細與=引 =並固定隔著第2線性引導件44而由楔構件 1之= =^勢’及由第345所定㈣降 如上’本實彡態之升輯件46,分_ 及中間體獅,且中間體4621以可移動地固定於第 44。在此,升降構件46之設置有第2線性引導件44 ^牛 與中間體4621之設置有第2線性引導件44之設置面為^同面因 此,所謂調整升降構件46之設置有第2線性引導件44之嗲 的角度,意指固持並固定中間體4621、升降構件46之姿勢^音。 亦即,如上所述,若將中間體4621固定在升降構件本體g : 則可將升降構件46設於第3線性引導件45時設置有第2線性引 導件44之設置面,調整為沿著第2線性引導件44之設有移動工 作台的固定面(設置面)的角度。 中間體4621,係設置在前述第2線性引導件44上,具體而士 設在第2線性引導件44之第2滑動件442上,相對於前構^ 15 200913126 42之傾斜面而相對移動者。 本實施祕之固定部,設置於中間體彻或升降構件本體 =其中之-方,由前端部推壓接觸中間體4621或升降構件本體 461之另一方而夾持之多數推壓件構成。 推,件4622’係於固定時相對於中間體衝或升降構件本體 f = 方進退轉’魏設計上之尺寸公差或組裝公差等者, =1,示,係設置於升降構件本體461,與前述中間體4621之 2此面及另—端面接觸’並使中間體4621相對於升 而狀者。各推壓件4622,係金屬製之螺絲,其 ===_ 4621之平面部。推壓件船之前端部: 板測S序;之基板測定用工作台1之動作’依照基 (Ί 「膜厚測定」「鲍曲測定」之順序 向定=作台1全體利用水平移動機構在XY方 之載置板2 向構f ’將基7定用工作台! 偏光儀)_/成在載置 並且,以通常測定系6(橢圓 厚制定,μ成在載置於载置板2上之基板⑻上的膜厚。為了膜 測定。此時载載=2=有基^之_,於ΧΥ方向不移動,進行 膜厚測定位置’位於通常測定位置Ρ1。 =避is將餘板2從通㈣定位置= 21,從載m ί了,Γίί支持銷3通過載置板2之貫通孔 從載置板2 ^持^面^出而支f基板w。依此方式,將基板W 計),測利輸曲測定系7(雷射變位 :翹曲測定」一骐厚測定」之順序 持鎖'用工作台1全體在χγ方向進行位置調節。又,支 &amp;於預先調節她曲測定位置Ρ3,因此不 $ 16 200913126 硪。並且,以翹曲測定系7(雷 ^ 板W之_。於此定巾,f 於支_ 3之基 平移動機卿方向移動,且於1利用水 描,-面進行測定。此時,測二在基板说之表面掃 置’係從設麵平鶴機構達η方向位 得,並同時記憶在此地點測定碼為或線性編碼器取 移動並進行基板w全面測定。、:、且’使基板在χγ方向 又,趣曲之測定,可為將灯 者,亦可為連續掃描進行測定者。 置離政地叹疋進仃測定 n定結束後,魅板2位在退驗置ρ2, 持耆基板W之狀態,利用驅動機 、支持勒3支 往通常測定位置P1移動,侔43= 载置板2從退避位置Ρ2 通孔2!,從載置板^頂支持鎖3通過載置板2之貫 式,減搞m = 没載置板2固持基板W。依此方 盆次,ί載板2上之基滅成膜後之膜厚。 基板W位置再 使用基板測定用工作台1移載時, 從載銷3升降移動而將基板w 其狀m2了基板在載置板2上於水平方向之位置,與 ^反在支持銷3上於水平方向之位置,會偏離1〇〇〜2〇〇_左 2在^常本實施形態之基板測定用工作台1,將載置板 晉;1及退雜置Ρ2之間升降移動,絲板W從載 置板持肖移載之動作合計進行1Q次之結果如圖4所示。 妯二^ in,從载置板2往支持鎖3移載前後,基板w於x 向之、偏離平均L88Um)、於Y轴方向之位置偏離平均 .^ Μ主χγ(水平)方向之偏離,相較於習知者,縮小許多。 〈本實施形態之效果〉 依照依此方式構成之本實施形態之基板測定用工作台i,由於 17 200913126 水平方向偏離。因此,=H錢持銷3移载時,基板W在 之通常測定之測定姓要二㈣曲測定之測定結果與膜厚測定等 者,可以Γ可叫舰使用兩麵収結果。再 台1小型化,並且價二上下移動機構,能使基板測定用工作 性引導件動機構4 ’隨著楔構件42在第1線 42之設置有第i f動,能夠調整升降構件46或楔構件 性引導件或各構向移動’因此,可以不論各線 構件46不會對於線性弓丨度危及安裝精度#,横構件42及升降 力。藉此,細固定的古拔M q過又限制’能實現高精度及高解析能 載置板2之^ 測定位置⑸能儘可能地接近 又,等果能更為顯著。 簡m寐押$心 轧釉承4同價引導件,因此,能使構造 ίί支^ 樹祕,峨細^ 調節機構5。前述專利文獻$在由 =基台^^有高度 100 5 ^ &lt;其他變形實施形 度’能調節麵曲測定位置P3。 形態;應施形態。以下説明中’與前述實施 但也:用S形態之升降移動機構4 ’係使用了横構鲁 ^實,職中,财败系6_絲板f上之膜 將美:t測疋其他基板W之物理量或化學量者。例如,可ίί . 將基板w之組成、性質、構造、狀態等定性或定量測定析 18 200913126 篇上之缺陷或異物者、分析基板表面或在基板表面成膜之 又,支持構件3,不限於銷,亦可視用途而製成例如長尺 專各種形狀。再者,前述實施形態之中,支持構件3有3個,徊 也可為4個以上,只要成長尺形狀,亦可為2個。 ~ 載置板2設置有貫通孔21,使支持構件3插通 ζέΒ ,,,但除此以外,亦可在載置板2之侧緣部設置於平面 心凹入的凹部,支持構件3插通此凹部者。又,亦可在 设置貫11孔21及凹部,將支持構件3固定在載置板i π li’.ri角度調節機構設置在模構件42。於此情形,楔構件 /、備.輭本體,固定在第丨線性引導掬 ί於模本體’調_第2、_導件= 升降構件46之第2線性引導件44之角度,置面“者固疋在 r機2可模f件42或升降構件46至少其中之一,具有角度調 “引導i 前述楔構件42之設有前述第2 前述楔構^ 42 祕紅雜將件之設有 述第2線性引導件^4之 ^ ’或=前述升降構件46之設有前 私之設有前述升_^之述第2線性引導件 w 3 高速移動,齡崎紐使餘基工作台1 有時測定位置會變動。+板從以支持銷3支持之位置偏離, 時間進行翹曲測定。 ,必需對於移動速度設限,無法在短 為解決此問題,於翹曲、、丨 板w在水付向鋪之偏m,可贿支觸3具備防止基 銷3之前端設置開口的貫 邛。具體而言,在圖5所示支持 持基板W。又,可葬由你以,從此貫通孔32吸附基板W並固 曰 寺銷3之支持端之磨擦係數加大,而使 19 200913126 基板I=f t水平軸機構之加速度所生慣性而偏離。 刚边只施形態中,如圖3所示,基板 =’該3根支持銷3設置成較基板f之半^ =32所 接觸,而有損傷或部分可能由於與支持銷3 支持不成為晶片而會廢棄i基職’可贿支持銷3 為了使支持銷3將基板w於外周部支持,s署q 使其在與基板W具同半徑之同心3根支持銷3, Τ,從支持端往上支斤二=二 =式,,基板W之中心以3根支持/3 曹= δ ’故谷易將基板w配置在適於測定的位置。 /重〜配 狀。漸細 且基板W沿著推拔部嵌入,故基板w f 3 f置基板W, 所定出之中心位置。又,基板二;4===1銷3 具有;工作台1高速移動亦不易偏離的效果。此, 用更多數支持銷3。亦可在具某半經之二 配置在大致正三角形上,構成第丨支持 使^支持劫3 同心圓的圓周上’使3根支_ 3配置在=正三較^ 第2支持構件群Α2。在此,如圖7所示 一角f ’構成 之支持端即前端之高度,位她曲测定位^第寺 群A2之支持端即前端之高度,位在勉 二使^支持構件 P2之間的翹曲測定位置P4。又,圖8為求置 3之圖示省略。 门千肘甲兴之支持銷 依此方式,預先在毅板2之巾心魅基 往下方移動時,能將基板W之中心配置在已配置有支;反同2 20 200913126 變更作業上之安排’能輕易地將多數種類大小 疋4置P3更為下方,因此,當基板讯以第1支^ ^ ί A2不接觸基板w。因此,可以防止支持構件 而產ί=時則;環境之溫度變化 ^口匕為支持鎖3之熱變形所生基板w傾斜,造成_之測定精 使得可以設置作為熱變形減低機構之遮斷壁, ίΐίΐί= f=度產生變化之周邊外部環境不流入。又, 丌Τα置遮斷壁,使其包圍升降移動機構4。 保持銷邊外部環境為更高之溫度 地保持在一定-声,ii'f由將加熱器進行開閉控制,可輕易 斜。 '凰X &quot;方止由於支持銷3之熱變形造成基板w傾 脹率’可將支持銷3以低熱膨 用工作台i =、、=體t ^支持銷3 ’可使用在使用基板測定 精度進行定位之ϋ膨脹Ϊ t 3二既定之定位 基板移動之水平移動機構,對於 V吏軸方向移動,並進行μ方向之測定。 當組合,本或變形實施形態之—部分或全部適 範圍内進ii種=於別述實施形態,當'在不脫離其趣旨之 200913126 【圖式簡單說明】 圖1顯示本實施形態之基板測定用工作台之示专旧 圖2顯示同實施形態之載置板之俯視圖。 圖3顯示同實施形態之基板測定用工作台之動作。 實驗 圖4顯示同實施形態之基板測定用工作台之位 結果。 夏丹現性 圖5顯示另一實施形態之中,支持構件之前端形狀。 圖6顯示又另一貫施形態中,支持構件之前端形狀。 圖7顯示不同的實施形態中,支持構件之前端形狀。 圖8顯示又不同的實施形態,支持構件之配置。 【主要元件符號說明】 A1 A2 P1 P2 P3、P4 W 1 2 3 4 5 6 7 21 31 32 41 第1支持構件群 第2支持構件群 通常測定位置 退避位置 輕曲測定位置 基板 基板測定用工作台 載置板 支持銷 升降移動機構 高度調節機構 通常測定系 魅曲測定系 貫通孔 突出部 貫通孔 第1線性引導件 22 200913126 42 模構件 43 驅動機構 44 第2線性引導件 45 第3線性引導件 46 升降構件 51 外螺紋部 52 内螺紋部 53 六角部 61 光照射部(雷射光源或白色光源) 62 光檢測器 100 工作台基台 411 第1軌道 412 第1滑動件 431 驅動部 432 滚珠螺桿軸 441 第2軌道 442 第2滑動件 451 第3執道 452 第3滑動件 461 升降構件本體 462 角度調節機構 4621 中間體 4622 推壓件 232 46 ^ , III y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y y Along the second linear guide: the private guide 2, the 3rd linear guide 4W4 guide rail, the long-length of the second b, the third track 41 = roller again on the track 4H, 44 451 It is slidably formed across the frame and is formed by opposing sliders 412, 442, and 452. The skillfully formed second and third wedge members 42' are members that are subjected to the force of the hot direction by the drive mechanism 43 to be described later, as shown in the figure; 412. The wedge member 42 has a slanted surface that is inclined downwardly at the end portion of the two-sided material member 41. Further, the floor member/σ is in the direction (toward the member==(4), including the drive unit 431, and the ball screw bead screw 432 is fixed by the bracket, and the coupling is rotatably connected to the base 100. The roller shaft nut (not shown) is provided on the wedge member σ 5 , and the output 432 of the portion 431 is screwed. The driving portion 431 can be considered by the ball screw shaft button. A motor or a manual rotation such as a motor is exemplified by the drive portion 431 to rotate the wheel shaft, and the ball screw shaft 432 is rotated by a predetermined angle by the joint 14 200913126, and the wedge table (10) is horizontally (X-axis direction) relative to the table member 2, the second linear guide 44 is disposed in the oblique direction of the wedge structure = the inclined surface. The inclined surface along the inclined lifting member 46 is attached to the wrong The straight direction (the z-axis square member body 461 ' is fixed to the third linear guide milk, and the lifting mechanism is provided on the lifting member body 461, the angle is adjusted, and the lifting mechanism 46 is provided with the second linear guide. Piece &amp; 45:= the second linear coffee fixed second lifting member body 461 is attached to the third wire guide 44; the heel, the fine and the = and fixed by the second linear guide 44 and the wedge member 1 = = ^ potential ' and as defined by the 345th (four) drop as above 'the actual state of the upgrade piece 46, the _ and the intermediate lion, and the intermediate 4621 is movably fixed at the 44th. Here, lift The member 46 is provided with the second linear guide 44. The setting surface of the second linear guide 44 provided by the cow and the intermediate body 4621 is the same surface. Therefore, the adjustment lifting member 46 is provided with the second linear guide 44. The angle of the cymbal means the posture of holding and fixing the intermediate body 4621 and the elevating member 46. That is, as described above, if the intermediate body 4621 is fixed to the elevating member body g: the elevating member 46 can be set at the third The linear guide 45 is provided with the installation surface of the second linear guide 44, and is adjusted to be along the angle of the second linear guide 44 provided with the fixed surface (installation surface) of the moving table. The intermediate body 4621 is provided at The second linear guide 44 is specifically provided on the second slider of the second linear guide 44. 442, relative to the inclined surface of the front structure ^ 15 200913126 42 relative to move. The fixing portion of the present embodiment is set in the intermediate body or the lifting member body = one of them, the front end portion pushes the contact intermediate body 4621 Or a plurality of pressing members sandwiched by the other side of the lifting member body 461. The pushing member 4622' is attached to the intermediate punch or the lifting member body f = squared and retracted 'Wei design dimensional tolerance or assembly The tolerance or the like, =1, is shown in the lifting member body 461, and is in contact with the second surface of the intermediate body 4621 and the other end surface, and the intermediate portion 4621 is raised relative to the shape. Each of the pressing members 4622 is a metal screw having a flat portion of ===_ 4621. The front end of the pusher ship: the S-sequence of the plate test; the action of the table 1 for the substrate measurement is determined according to the order of the basis (measurement of the film thickness) and the measurement of the bucks. In the XY side of the mounting plate 2 to the configuration f 'the base 7 is set to the table! Polarimeter) _ / placed in the normal measurement system 6 (elliptical thickness is made, μ is placed on the mounting plate The film thickness on the substrate (8) on the second layer is measured for the film. At this time, the load = 2 = the substrate has a _, and the film thickness measurement position is not moved in the ΧΥ direction, and the film thickness measurement position 'is located at the normal measurement position Ρ1. The board 2 is fixed from the position of (4) to 21, and the support pin 3 is supported by the through hole of the mounting board 2 from the mounting board 2 to support the substrate w. In this manner, In the case of the substrate W measurement, the measurement of the measured strain 7 (the laser displacement: the measurement of the warpage) is performed in the order of the ' γ in the χ γ direction. Pre-adjust her curvature measurement position Ρ3, so not $16 200913126 硪. Also, use the warpage measurement system 7 (Ray 板 plate W _. This fixed towel, f _ 3 base translation translation motivation The direction is moved, and the measurement is performed by using water drawing, and the surface is measured. At this time, the surface of the substrate is swept away from the surface of the substrate, and the measurement code is at the same time. Or the linear encoder takes the movement and performs the overall measurement of the substrate w., and, and the substrate is measured in the χγ direction, and the measurement of the interesting music can be performed by the person who is the lighter or the continuous scan. After the measurement is completed, the 2nd position of the charm plate is set to ρ2, and the substrate W is held. The drive unit and the support 3 are moved to the normal measurement position P1, and the 侔43=the placement plate 2 is retracted. Position Ρ2 through hole 2!, from the mounting plate ^ top support lock 3 through the mounting plate 2, reduce m = no load plate 2 to hold the substrate W. According to this square, ί carrier 2 When the substrate W is transferred to the substrate for measuring the substrate 1, the substrate W is moved up and down from the carrier 3, and the substrate w is placed in the shape of the substrate on the mounting plate 2 in the horizontal direction. , and the position of the ^ on the support pin 3 in the horizontal direction will deviate from 1〇〇~2〇〇_left 2 in the normal embodiment The substrate measuring table 1 is shown in Fig. 4 as a result of a total of 1Q times of moving up and down between the mounting plate 1 and the destacking device 2, and the total movement of the wire W from the mounting plate. Two in, before and after the transfer from the mounting plate 2 to the support lock 3, the substrate w is deviated from the average L88Um in the x direction, and the position in the Y-axis direction deviates from the average. ^ Μ The deviation of the main χ γ (horizontal) direction, phase <Effects of the present embodiment> The effect of the present embodiment is that the substrate measurement table i of the present embodiment configured as described above is shifted in the horizontal direction of 17 200913126. Therefore, the transfer of the =H money pin 3 is performed. In the case where the substrate W is generally measured and the measurement result of the measurement of the surname is two (four), and the film thickness is measured, the ship may use the two sides to receive the result. The retracting unit 1 can be adjusted in size and the price can be adjusted by the up and down movement mechanism, so that the workpiece measuring work guide moving mechanism 4' can be adjusted as the wedge member 42 is provided on the first line 42. The structural guides or the respective directional movements 'thus, regardless of the line member 46, the mounting accuracy #, the cross member 42 and the lifting force can be jeopardized for linear bowing. Therefore, the finely fixed ancient Mq is too limited to achieve high precision and high resolution energy. The position of the measuring plate 2 (5) can be as close as possible, and the result can be more remarkable. Jane m detained $ heart glaze bearing 4 the same price guide, therefore, can make the structure ίί branch ^ tree secret, fine ^ adjustment mechanism 5. The aforementioned patent document $ can adjust the curvature measuring position P3 by the height = 100 5 ^ &lt;Form; should be applied form. In the following description, the same as the above-mentioned implementation, but also: the lifting and lowering mechanism 4' in the form of S is used in the horizontal structure, and the film on the 6th wire plate f is used to measure other substrates. The physical quantity or chemical quantity of W. For example, the support member 3 can be qualitatively or quantitatively determined by the composition, properties, structure, state, etc. of the substrate w, and the support member 3 is not limited to the defect or the foreign matter on the surface of the substrate or the surface of the substrate. The pin can also be made into various shapes such as a long rule, depending on the use. Further, in the above embodiment, there are three support members 3, and four or more ridges may be used, and two or more may be used as long as the scale shape is increased. ~ The mounting plate 2 is provided with a through hole 21 for inserting the support member 3, but in addition to this, the side edge portion of the mounting plate 2 may be provided in a concave portion recessed in the plane center, and the support member 3 may be inserted. Through this recess. Further, the support member 3 may be fixed to the placing plate i π li'. The angle adjusting mechanism may be provided in the mold member 42 by providing the through hole 11 and the concave portion. In this case, the wedge member/, the body of the cymbal, is fixed at the angle of the second linear guide 44 of the second linear guide 44 of the modulo linear guide 第 2, _ guide = lifting member 46. At least one of the r-machine 2 moldable member 42 or the elevating member 46 is provided with an angular adjustment "the guide member i is provided with the aforementioned second wedge member 42". The second linear guide member ^4 or the second lifting guide member 46 is provided with the second linear guide w 3 described above, and the second linear guide w 3 is moved at a high speed. Sometimes the measurement position will change. The + plate is deviated from the position supported by the support pin 3, and the warpage measurement is performed at the time. It is necessary to set a limit on the movement speed, and it is not possible to solve this problem in a short period of time. In the warpage, the seesaw w is in the water paying shop, and the bribe support 3 is provided to prevent the opening of the base pin 3 from opening. . Specifically, the substrate W is supported as shown in Fig. 5 . Moreover, it can be buried by you, so that the through-hole 32 adsorbs the substrate W and the friction coefficient of the support end of the solid temple 3 is increased, and the inertia of the acceleration of the horizontal axis mechanism of the 19 200913126 substrate is deviated. In the rigid-side configuration, as shown in FIG. 3, the substrate='the three support pins 3 are disposed in contact with half of the substrate f=32, and the damage or part may not be the wafer due to the support with the support pin 3. I will abandon the i-based job's bribe support pin 3. In order for the support pin 3 to support the substrate w in the outer peripheral portion, the support pin 3 has the same radius with the substrate W. 3 support pins 3, Τ, from the support end Upward, the second is two = two, and the center of the substrate W is supported by three supports /3 Ca = δ 'There is a substrate w placed at a position suitable for measurement. /Heavy ~ matching. The substrate W is embedded along the push-out portion, so that the substrate w f 3 f is placed on the substrate W at the center position. Further, the substrate 2; 4 == = pin 3 has the effect that the table 1 is not easily deviated at high speed. So, support pin 3 with more numbers. Alternatively, it may be arranged on a substantially equilateral triangle with a certain half of the half to constitute a third support on the circumference of the concentric circle of the support 3, so that the three branches _ 3 are arranged in the second support member group Α2. Here, as shown in FIG. 7, the height of the support end, that is, the front end, is the height of the front end, and the height of the front end, which is the support end of the temple group A2, is located between the support member P2. Warpage measurement position P4. In addition, FIG. 8 is abbreviate|omitted and the illustration of FIG. In this way, the support of the door of the Thousand Elbows, in advance, can move the center of the substrate W to the position that has been configured before the movement of the board of the board 2, and the arrangement of the change operation on the change of 2 20 200913126 'It is easy to set the majority of the size 疋4 to P3, so that the substrate does not touch the substrate w when the first layer is touched. Therefore, it is possible to prevent the support member from being produced when the temperature is changed; the temperature change of the environment is the inclination of the substrate w which supports the thermal deformation of the lock 3, so that the measurement of the _ can be set as the occlusion wall of the thermal deformation reduction mechanism. , ίΐίΐί= f= degrees change the surrounding external environment does not flow. Further, the 丌Τα is placed to block the wall so as to surround the lifting and lowering mechanism 4. Keep the external environment of the pin at a higher temperature and keep it at a certain level. The ii'f can be easily tilted by opening and closing the heater. 'Phoenix X &quot; square stop due to thermal deformation of support pin 3 caused by the substrate w swell rate ' can support pin 3 with low thermal expansion table i =,, = body t ^ support pin 3 ' can be used in the use of substrate determination精度Expansion 精度 精度 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 In the embodiment, the present invention or the modified embodiment is partially or fully adapted to the above-described embodiments. In the embodiment, the present invention is not limited to the meaning of 200913126. [Simplified description of the drawings] FIG. 1 shows the substrate measurement of the present embodiment. The top view of the mounting plate of the same embodiment is shown by the old drawing of the table. Fig. 3 shows the operation of the substrate measuring table of the same embodiment. Experiment Fig. 4 shows the result of the position of the substrate measuring table of the same embodiment. Chardonnay Presentity Figure 5 shows the shape of the front end of the support member in another embodiment. Figure 6 shows the shape of the front end of the support member in yet another embodiment. Figure 7 shows the front end shape of the support member in a different embodiment. Figure 8 shows a different embodiment of the configuration of the support members. [Description of main component symbols] A1 A2 P1 P2 P3, P4 W 1 2 3 4 5 6 7 21 31 32 41 1st support member group 2nd support member group Normal measurement position retraction position Light measurement position Substrate substrate measurement workbench Mounting plate support pin lifting and lowering mechanism height adjusting mechanism Normally measuring the fascination measuring system through hole protruding portion through hole first linear guide 22 200913126 42 Mold member 43 Driving mechanism 44 Second linear guide 45 Third linear guide 46 Lifting member 51 External thread portion 52 Internal thread portion 53 Hexagon portion 61 Light irradiation portion (laser light source or white light source) 62 Photodetector 100 Table base 411 First rail 412 First slider 431 Drive portion 432 Ball screw shaft 441 second track 442 second slider 451 third way 452 third slide 461 lifting member body 462 angle adjusting mechanism 4621 intermediate 4622 pressing member 23

Claims (1)

200913126 十、申請專利範圍: 定系,及使測定基板之翹自的翹曲測 常測定系; 土板之翹曲u外之物理量及/或化學量的通 包含: 定位置為下方通常測定位置及在較該通常測 之移動不相^而=支巧之f持端,該支持端與該載置板 曲測定位置;及 ^夺編之前端固定在該翹曲測定系之翹 之間機ί ’使該載置板在該通常測定位置及該退避位置 2·如申;篇:置及退避位置之間。 曲測定位置與該通常測定位置板作台’其中’該麵 之範圍。 差,係在貫質上不影響翹曲測定 3. 如申請專利範圍第 持構件的每-個,呈有用工作台’其中,該支 4. 如申請專概圍第H,件之南度的高度調節機構。 置板係用來吸附並固持該基板^'盤測定用工作台,其中,該載 持構 6. 如申請專#防止絲板偏離。 離防止部將該基板吸附並固持、。疋用工作台,其中’該偏 7. 如申請專利範圍第1 多數支持_驗切大1用 板的支持構件群的趣曲涓,!定位罟,#定 ^之内側支持小基 群之魅曲測定位置之下方。 °又 持大基板的支持構件 24 200913126 • » 8. 如申請專利範圍第1項之基板測定用工作台,其中,該通 常測定系係用於測定該基板上之膜厚的橢圓偏光儀。 9. 一種基板測定裝置,使用申請專利範圍第1項之基板測定 用工作台。 十一、圖式: 25200913126 X. Scope of application: The system and the measurement system for determining the warpage of the substrate; the physical and/or chemical quantities of the warpage of the soil plate include: The fixed position is the normal measurement position below And the position of the support end and the mounting plate are measured at the end of the normal measurement, and the front end of the support is fixed between the warp measurement system ί 'The mounting plate is placed between the normal measurement position and the retracted position 2, such as the application and the retracted position. The curved measurement position and the normal measurement position plate serve as a range in which the surface is 'inside'. Poor, does not affect the warpage measurement in the quality. 3. If each part of the patent-holding component is a useful workbench, where the branch is 4. Height adjustment mechanism. The plate is used to adsorb and hold the substrate, and the carrier is used to prevent the wire from deviating. The substrate is adsorbed and held by the preventing portion.疋Use the workbench, where 'the partiality is 7. If the patent application scope is the first one, the majority support _ check the big one with the support component of the board, 罟 !, positioning 罟, #定^ inside supports the small group charm The position of the curve is below the measurement position. Further, a supporting member for holding a large substrate 24 200913126 • A 8. The substrate for measuring a substrate according to the first aspect of the invention, wherein the measuring system is an ellipsometer for measuring the film thickness on the substrate. A substrate measuring apparatus using the table for substrate measurement according to item 1 of the patent application. XI. Schema: 25
TW097134692A 2007-09-13 2008-09-10 Substrate measuring stage TW200913126A (en)

Applications Claiming Priority (2)

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JP2007238167 2007-09-13
JP2008157270A JP4234190B1 (en) 2007-09-13 2008-06-16 Board measurement stage

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JP5631114B2 (en) 2010-08-24 2014-11-26 株式会社日本マイクロニクス Inspection device for flat specimen
KR101278295B1 (en) 2011-06-14 2013-06-24 하이텍 주식회사 Lifting apparatus
JP6121732B2 (en) * 2012-03-29 2017-04-26 株式会社Screenホールディングス Substrate inspection apparatus and substrate inspection method
DE102018129766A1 (en) * 2018-11-26 2020-05-28 Gom Gmbh Device and method for measuring objects
KR102182632B1 (en) * 2019-06-10 2020-11-24 주식회사 크레셈 Inspection apparatus of Semiconductor substrate
JP2022125560A (en) * 2021-02-17 2022-08-29 東京エレクトロン株式会社 Film thickness measuring device, film forming system and film thickness measuring method

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TWI615603B (en) * 2013-05-28 2018-02-21 三星顯示器有限公司 Apparatus for bending substrate, apparatus and method for inspecting bended substrate

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