200909996 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種使用於液晶顯示裝置（Uquid Crystal Display ;在以下，稱為LCD)之製造等之灰階光 罩之缺P曰修正方法、灰階光罩之製造方法、灰階光罩以及 圖案轉印方法；特別是關於一種適合使用在薄膜電晶體液 晶顯示裝置之製造所使用之薄膜電晶體基板（TFT基板）之 〔 製&之灰階光罩之缺陷修正方法、灰階光罩之製造方法、 灰階光罩以及圖案轉印方法。 【先前技術】 現在，於LCD領域，薄膜電晶體液晶顯示裝置（ΤΜnThe present invention relates to a method for correcting a gray-scale mask of a liquid crystal display device (hereinafter referred to as LCD), etc. A method for manufacturing a gray scale mask, a gray scale mask, and a pattern transfer method; and more particularly to a thin film transistor substrate (TFT substrate) suitable for use in the manufacture of a thin film transistor liquid crystal display device A defect correction method for a gray scale mask, a method for manufacturing a gray scale mask, a gray scale mask, and a pattern transfer method. [Prior Art] Now, in the field of LCD, thin film transistor liquid crystal display device (ΤΜn
Film Transistor Liquid Crystal Display ;在以下，稱 為TFT LCD)係比起CRT(陰極射線管），還具有所謂容易成 為薄型且消耗電力低之優點，因此，急速地進行商品化。 I TFT — LCD係具有··在呈矩陣狀地配列之各個像素來配列 TFT之構這之TFT基板以及配列於各個像素而配列紅、綠 和I之像素圖案之彩色濾光片，重疊於液晶相之介在下之 概略構造。TFT— LCD係製造製程數多，即使是僅TFT基板， 也使用5〜6片之光罩而進行製造。在此種狀況下，提議使 用4片之光罩而進行TFT基板之製造之方法。 該方法係指藉由使用具有遮光部和透光部及半透光部 (灰階部）之光罩（在以下，稱為灰階光罩）而減少使用之光 罩片數。在此，所謂半透光部係指在使用光罩而圖案轉印 2130-9781-PF;Ahddub 6 200909996 成為既 量之部 光罩， 於被轉印體之際，減低透過之曝光用光之透過量， 定量’控制被轉印體上之光阻膜之顯影後之殘膜 分。將—起具備此種半透光部、遮光部和透光部之 稱為灰階光罩。 在圖6及圖7， 製程之某一例子。圖 製程。 顯示使用灰階光罩之TFT基板之製造 7係顯示接續於圖6製造製程之製造 在玻璃基板1上，形成閘極電極用金屬膜，藉由使用 光罩之光微影而形成閘極電極2。然後，形成間極絕緣膜 3、第1半導體膜4(a—Si :非結晶質矽）、第2半導體臈 5(N+a—Si)、源極/汲極用金屬膜6以及正型光阻膜7(圖 6(a))。接著，使用具有遮光部丨丨和透光部I?及半透光部 13之灰階光| 1()而曝光及顯影正型光阻冑7,此而覆蓋 TFT通道部形成區域及源極/汲極形成區域和資料線形成區 域，亚且，形成第！阻劑圖案7a而使得通道部形成區域更 加薄於源極/汲極形成區域（圖6(b))。接著，以第ι阻劑 圖案7a作為光罩而蝕刻源極/汲極用金屬膜6及第2半導 體膜4、帛1半導體膜5(圖6(c))。接著，藉著由於氧所 造成之灰化（ashing)而除去通道部形成區域之薄阻劑膜， 形成第2阻劑圖案7b(圖7(a))。然後，以第2阻劑圖案 7b作為光罩而蝕刻源極/汲極用金屬膜6，形成源極/汲極 6a 6b’接著，姓刻第2半導體膜5(圖7(b))，剝離最後 殘留之第2阻劑圖案7b(圖7(c))。 作為使用於此之灰階光罩係知道藉由微細圖案而形成 2130-9781-PF;Ahddub 7 200909996 半透光部之構造。例如正如圖8所示，灰階光罩係具有對 應於源極/汲極之遮光部11 a、11 b、透光部12和對應於.甬 道部之半透光部（灰階部）1 3。半透光部13係形成由使用灰 階光罩之LCD用曝光機之解析限度以下之微細圖案所組成 之遮光圖案13a之區域。遮光部iia、lib和遮光圖案13& 係通常一起由鉻或鉻化合物等之相同材料所組成之同樣厚 度之膜來形成。使用灰階光罩之LCD用曝光機之解析限2 係在許多之狀態下，於步進方式之曝光機，成為大約3 A m , 於鏡投影方式之曝光機，成為大約4//m。因此，例如/圖 8,可以使得半透光部13之透光請之空間幅寬未滿3 遮光圖案13a之線幅寬未滿曝光機之解析限度以下之 3 // m。 雨述微細圖案形式之半透光部係選擇灰階部分之役 計，具體地使得用以具有遮光部和透光部之中間之半階效 果之微細圖案成為線及空 Ί小式，或者疋成為點（網點）形 式’或者疋成為其他圖荦， 圖茱並且，在線及空間形式之狀態 下，必須考慮線幅寬成為如何、 护#，卹八 士 次者疋先之透過之部分和 丸或者疋设計整體之透過率成 為何種程度等之非常多之事 ,、而進仃故计。此外，即传署 在灰階光罩之製造，也 卩使疋 内之線幅寬之偏差管理等之^ i之吕理、先罩 之非吊困難之生產技術。 於疋，提議半透光部 膜例如專利文獻1:日^為切光性之半階膜（半透光 以藉由使用該半階膜而特開⑽5 — 37933號公報）。可 、減v半階部分之曝光量，進行半階 2130-978l-PF;Ahddub 200909996 在使用丰严白膜之狀態下，^ -^ , 於D又汁上，檢討整體之透 過率必須如何’可 類(辛材)奪… 選擇成為半階膜之膜種 可以僅η 先罩因此，在灰階光罩之製造， 了以僅進仃半階臈之膜厚控 Μ .^ , Β理比較容易。此外，在 藉由灰階光罩之半透光部而 珉TFT通道部之狀態下，如 果疋丰階膜的話，則可以藉由 攸〜製転而谷易地進行圖 木化，因此，具有所謂TFT通 卩之形狀也可以成為複雜 之圖案形狀之優點。 【發明内容】 、、但是，在前述專利文獻1所記載之灰階光罩，於其製 造過程’不可避免地在由半透光膜所組成之半透光部，產 生缺陷。此外，在此，冑由於膜圖案之剩餘或遮光膜成分 之附著或者是異物而使得透料低於既定值之缺陷，稱為 黑缺陷，W由於膜圖案之不足而使得透過率高於既定值之 缺陷，稱為白缺陷。 在使用半透光膜之灰階光罩之半透光部而產生黑缺 1¾、白缺陷之狀態下，認為通常例如使用雷射⑽法或奋 聚離子束⑴B)法而進行局部之膜修正。也就是說，可以 :缺陷之部分，呈局部地形成修正膜，或者是預先剥離既 定面積部分之包含白缺陷部分和黑缺陷部分之區域，重新 呈局部地形成修正膜。但是，在該狀態下，修正膜之材料 係不-定使用相同於前述半透光膜者。也就是說，因為使 用於半透光部之半透光膜係並無限^適合於前述局部之成 2130-9781-PF;Ahddub 9 200909996 膜法之緣故。因此，必須以使用 ^ ^ 、果材（或組成）不同於半 透光膜，來作為前提，選擇 牛 伴l止膜之素材。在該狀態f， 必須選擇修正膜之素材组成 風及膘；而使得局部之修正部 =透=過率，於其他部分(未修正部分)之曝 另方面利用在使用灰階光罩而在被轉印體來轉 圖案時之曝光機係例如在成為 隹成為液日日顯不裴置製造用之狀態 下，一般使用i射線〜g射線（波長365〜436nm)程度之^ 長區域。在這些曝光，需要一般之面積大於半導體 造用之曝光，因此，為了確保光量，所以，不使用單一波 長之曝光用光，有利於使用呈 节使用具有波長區域之曝光用光。此 外，曝光機之曝光用光係在許多之狀態下，於各個之f置， 變得不ϋ如即使是具有涵蓋於玉射線〜§射線之波 長區域之曝光用光，也存在丨射線強度最大之曝光機、g 射線強度最大之曝光機等。此外，曝光機光源之波長特性 係進行經時變化。因茈，抽a .. 口此，即使是預先考慮既定波長之光 過率特性，選擇修正3, dt ,, 、素材、膜厚等而使得局部修正部 分之曝光用光之透過率相同於未修正部分之曝光用光之透 過率如果曝光用光之波長不同的話，則也變動光透過率， 所以’在實際之曝光時，修正部分和未修正部分之透過率 係不-定完全-致。如果在修正部分和未修正部分之透過 率有偏差的話，則在圖安絲（士 在圖案轉印時，於該部分之被轉印體上 之阻劑，產生意外之膜厚之位差。 使用圖9而說明前述之問題點。圖9係顯示習知之缺 2130-9781-PF;Ahddub 10 200909996 修正方法之某-例子。圖9(a)之光罩圖案係具備形成為 既疋之圖案狀之遮光部21和透光部22及半透光部Μ。遮 光部21係在透明基板（並未圖示）上至少具有遮光膜μ而 構成，透光部22係藉由露出透明基板之基板所構成，並 且，半透光㉟23係、在透明基板上具有半透光膜⑼所構成。 接著，在半透光部23之半透光膜26產生缺陷部分51、52(5ι 係白缺陷、52係黑缺陷）之狀態下，就黑缺陷部分52而言， 除去包含該缺陷之既定大小之半透光膜而成為白缺1陷 56(圖9(b))，將正如前面之敘述而選擇素材、膜厚之修2 膜27’形成於白缺陷部分51、56(圖9(c))。接著，在使 用具有此種修正部分之灰階光罩而進行對於被轉印體之轉 印時，在被轉印體上，在對應於光罩遮光部之區域，形成 厚膜之膜厚部> 34a’在對應於半透光部之區域，形成薄 膜之膜厚部分34b，在對應於透光部之區域，形成無膜之 阻劑圖案34(圖9(d))。 在實際之曝光時，如果光罩之半透光部之修正部分和 未修正部分之透過率完全不一致而有偏差的話，則即使是 其透過率差位處於光罩規格之容許範圍内的話，也在圖案 轉印時，於該部分之被轉印體上之阻劑圖案34，在對應於 修正部分之部分34c、34d和其他部分，產生膜厚之位二： 圖10係顯示其他光阻圖案之例子。正如_ 1〇⑷所 示，在半透光部23所產生之白缺陷部分51和黑缺陷部分 52中，除去包含黑缺陷52之既定大小之半透光膜而成為 白缺陷抓圖剛）’藉由修正膜27而修正白缺陷”、 2130-978l-PF;Ahddub 11 200909996 56(圖10(c))。在使用具有此種修正部分之灰階光罩而進 行圖案轉印至被轉印體時，在被轉印體上，在對應於光罩 遮光部之區域，形成厚膜之膜厚部分心，在對應於半透 光部之區域，形成薄膜之膜厚料35b。接著，在實際之 曝光時，如果光軍之半透光部之修正部分和未修正部:之 透k率70王+致而有偏差的話，則在該部分之被轉印體 上之阻劑圖案35，在對應於修正部分之部分35c、祝和 其他部分，產生膜厚之位差。 此外，正如前面之敘述’在藉由光透過率而決定修正 膜之素材、膜厚等之時，該部分之曝光用光之相位差係不 -定相同於未修正部分，索性大多說是不同。這個係也成 為在修正部分和未修正部分之間產生被轉印體上之阻劑圖 案之意外之位差之原因。 在此種被轉印體上之阻劑圖案來產生微小之位差時， 即使是對於作為灰階光罩之性能不造成影響（也就是說，即 使是使用該灰階光罩來進行圖案轉印，也無問題發生）之程 度之位差’也在被轉印體上之圖案之檢查製程，檢測成為 疑似缺陷。因此，降低檢查效率，降低液晶顯示裝置等之 生產效率，成為製造上之不便。 本發明係有鑑於前述之壯， 」钆之狀况而完成的；以提供一種在 被轉印體上之圖案檢查並無發生檢測出疑似缺陷之意外並 且月b夠適度地修正發生於本读本加 u 於牛透先部之缺陷的灰階光罩之缺 陷修正方法，來作為第1目的。 而且本發明係提供一種具有適用此種缺陷修正方法 2130-9781-PF；Ahddub 200909996 之缺1¼修正製程的灰階光罩之缺陷修正方法，來作為 目的。 第 此外，本發明係提供一種適度地修正發生於半 之缺陷的灰階光罩，來作為第3目的。 ° 此外，本冑明係提供一種使用前述灰階光罩之 印方法，來作為第4目的。 茱轉 、為了解決前述之課題，因此，本發明係具有以下之 造。 每 (構造1) -種灰階光罩之缺陷修正方法，係具有：遮光 先部以及降低使用於光罩使㈣之曝光用光之透過量 既疋量之半透光部並且在被轉印體上用以形成膜厚呈階^ 取連續地不同之阻劑圖案的灰階光罩之缺陷修正方法，： 特徵在於具有： 八 藉由對於既定波長之曝光用光具有既定之光透過率之 ^透光臈而形成前述半透光部且在前述半透光部來產生缺 時而特定該缺陷部分之製程； 、 成為包含前述缺陷部分之半透光部且除去藉由遮光部 二透光部之至少—邊所包圍之區域之半透光部整體之半透 光膜之製程；以及 同於前 、、在除去該半透光膜之區域來形成素材或組成不 述半透光膜之半透光性之修正膜之製程。 (構造2) 係具有：遮光部、透 —種灰階光罩之缺陷修正方法 2l3〇^9781-PF；Ahddub 13 200909996 光部以及降低使用於光罩使用時之曝光用光之透過量成為 既定量之半透光部並且在被轉印體上用以形成膜厚呈階段 或連續地不同之阻劑圖案的灰階光罩之缺陷修正方法 特徵在於具有： 八 藉由對於既定波長之曝光用光具有既定之光透過率之 半透光膜而形成前述半透光部且至少藉由對於前述曝光用 光具有既定之遮光性之遮光膜而形成前述遮光部且在前述 半透光部來產生缺陷時而特定該缺陷部分之製程； 除去存在於包含該缺陷部分所產生之半透光部之矩形 狀之區域之膜之製程；以及 、在除去該膜之區域至少形成素材或組成不同於前述半 透光膜之半透光性之修正膜之製程。 (構造3) 構造2所記載之灰階光罩之缺陷修正方法，其特徵在 於、:，在除去前述膜之製程，除去存在於前述矩形狀之區域 之半透光膜和遮光膜’在形成前述修正膜之製程，在半透 光部，形成前述半透光性之修正膜，在遮光部，形成遮光 性之修正膜。 (構造4 ) 、構造1至3中任一項所述之灰階光罩之缺陷修正方 法—其特徵在於：前述半透光膜和前述半透光性之修正膜 係猎由不同之成膜方法而進行成膜。 (構造5) 構造 1 5 4 Φ /工 κ 4甲任—項所述之灰階光罩之缺陷修正方 2130-978l-PF;Ahddub 200909996 法=、特徵在於：前述半透光膜和前述半透光性之修正膜 之相對於曝光用光之相位差係50度以上。 (構造6 ) 、構造1至5中任一項所述之灰階光罩之缺陷修正方 法。其特徵在於：在除去前述半透光膜或膜之製程，除去 之區域之大小係也在任何方向不超過5〇 #瓜之大小。 (構造7) 、構造1至6中任一項所述之灰階光罩之缺陷修正方 法其特徵在於：前述灰階光罩係薄膜電晶體之源極、汲 極及通道部之製作用。 (構造8) 構造1至6中任一項所述之灰階光罩之缺陷修正方 法，其特徵在於：前述灰階光罩係薄膜電晶體之路徑声或 電洞之製造用。 曰〆 (構造9) -重灰階光罩之製造方法，其特徵在於：包含藉由構 造1至8中任一項所述之缺陷修正方法之所造成之缺陷修 正製程。 (構造10) 一種灰階光罩，係具有：遮光部、透光部以及降低使 用於光罩使科之曝光用光之透過量成為既定量之半透光 部並且在被轉印體上用以形成膜厚呈階段或連續地不同之 阻劑圖案的灰階光罩’其特徵在於··該灰階光罩係具有降 低至少具# 365〜436mn範圍内之波長區域之曝光用光 2130-9781-PF/Ahddub 15 200909996 之透過量來成為既定量之複數個半透光部，該複數 分係具有概略相同於其他半透光部之光透過 二並且’错由素材或組成不同於其他半透光部之單一之 半透光膜而形成。 <早之 (構造11) -種圖案轉印方法’其特徵在於：使用 §己載之製造方法所造成之灰階光罩或者是H 所 之方岬本W 飞考疋構k 1 〇所記載 ^灰^罩，既定波長之曝光用光，曝光於被 被轉印體上，形成膜厚呈階 在 續不同之阻劑圖案。 如禾精由本發明之方晦）伞$ 成為包人… 缺陷修正方法的話，則Film Transistor Liquid Crystal Display (hereinafter referred to as TFT LCD) has an advantage that it is easy to be thin and consumes less power than CRT (Cathode Ray Tube), and therefore, it is rapidly commercialized. I TFT — LCD is a TFT substrate in which a TFT is arranged in a matrix in a matrix, and a color filter in which a pixel pattern of red, green, and I is arranged in each pixel, and is superposed on the liquid crystal. The structure of the phase is as follows. The TFT-LCD system has a large number of manufacturing processes, and it is manufactured using only 5 to 6 photomasks even in the case of a TFT substrate. Under such circumstances, a method of manufacturing a TFT substrate using a four-piece photomask is proposed. This method is to reduce the number of used masks by using a photomask having a light shielding portion and a light transmitting portion and a semi-light transmitting portion (gray portion) (hereinafter referred to as a gray scale mask). Here, the semi-transmissive portion refers to a pattern transfer 2130-9781-PF using a photomask; Ahddub 6 200909996 is a partial photomask, and reduces the transmitted exposure light when the object is transferred. The amount of permeation is used to quantitatively control the residual film after development of the photoresist film on the transfer target. A light-emitting mask having such a semi-transmissive portion, a light-shielding portion, and a light-transmitting portion is referred to as a gray scale mask. In Figures 6 and 7, an example of a process. Figure Process. 7 shows the manufacture of a TFT substrate using a gray scale mask. The manufacturing process of the manufacturing process of FIG. 6 is performed on the glass substrate 1 to form a metal film for the gate electrode, and the gate electrode is formed by using the photolithography of the photomask. 2. Then, the inter-electrode insulating film 3, the first semiconductor film 4 (a-Si: amorphous germanium), the second semiconductor germanium 5 (N+a-Si), the source/drain metal film 6, and the positive type are formed. The photoresist film 7 (Fig. 6(a)). Next, the positive-type photoresist 胄 7 is exposed and developed using the gray-scale light | 1 () having the light-shielding portion 丨丨 and the light-transmitting portion I? and the semi-transmissive portion 13, thereby covering the TFT channel portion forming region and the source /Bungee formation area and data line formation area, Yahe, form the first! The resist pattern 7a makes the channel portion forming region thinner than the source/drain forming region (Fig. 6(b)). Then, the source/drain metal film 6, the second semiconductor film 4, and the 帛1 semiconductor film 5 are etched using the ι resist pattern 7a as a mask (Fig. 6(c)). Then, the thin resist film of the channel portion forming region is removed by ashing due to oxygen to form the second resist pattern 7b (Fig. 7(a)). Then, the source/drain metal film 6 is etched by using the second resist pattern 7b as a mask to form the source/drain 6a 6b', and then the second semiconductor film 5 is named (Fig. 7(b)). The last remaining second resist pattern 7b is peeled off (Fig. 7(c)). As a gray scale mask used in this, it is known that the structure of 2130-9781-PF and Ahddub 7 200909996 semi-transmissive portion is formed by a fine pattern. For example, as shown in FIG. 8, the gray scale mask has light shielding portions 11a, 11b corresponding to the source/drain electrodes, a light transmitting portion 12, and a semi-transmissive portion (gray portion) corresponding to the channel portion. 3. The semi-transmissive portion 13 forms a region of the light-shielding pattern 13a composed of a fine pattern below the resolution limit of the exposure machine for an LCD using a gray scale mask. The light-shielding portions iia, lib and the light-shielding pattern 13 & are usually formed by a film of the same thickness composed of the same material such as chromium or a chromium compound. The resolution limit 2 of the exposure machine for LCDs using a gray scale mask is in many states, and is about 3 A m in the stepwise exposure machine and about 4//m in the mirror projection type exposure machine. Therefore, for example, Fig. 8 can make the spatial width of the light transmissive portion 13 less than 3, and the line width of the light shielding pattern 13a is less than 3 // m below the resolution limit of the exposure machine. The semi-transmissive portion of the micro-pattern in the form of a rain selects the duty of the gray-scale portion, and specifically makes the fine pattern for the half-order effect having the middle of the light-shielding portion and the light-transmitting portion into a line and a space, or Become a point (network) form 'or 疋 become other maps, and , and, in the state of online and spatial form, must consider how the line width becomes, 护#, shirts and priests Or, to what extent the overall transmission rate of the design is so much, and so on. In addition, it is the production technology of the gray-scale reticle, which is also used to control the deviation of the width of the line width in the 疋. In the case of a semi-transmissive film, for example, Patent Document 1: Japanese Patent Application Laid-Open No. Hei. No. Hei. No. Hei. Can reduce the exposure of the v-half-order part and carry out the half-order 2130-978l-PF; Ahddub 200909996 In the state of using the abundant white film, ^ -^ , on D and juice, review the overall transmittance must be ' Can be class (Xincai) to win... Selecting a film type that becomes a semi-order film can be only η first cover. Therefore, in the manufacture of gray-scale reticle, the film thickness is controlled by only the half-order 臈. ^ , Β 比较 comparison easily. In addition, in the state in which the TFT channel portion is halved by the semi-transmissive portion of the gray scale mask, if the film is formed by the 疋 阶 転 , , , , , , , , , , , , , , , , , , , The shape of the TFT overnight can also be an advantage of a complicated pattern shape. According to the first aspect of the invention, the gray scale mask described in the above Patent Document 1 is inevitably produced in a semi-transmissive portion composed of a semi-transmissive film. In addition, here, a defect in which the permeable material is lower than a predetermined value due to the remaining of the film pattern or the adhesion of the light-shielding film component or a foreign matter is called a black defect, and the transmittance is higher than a predetermined value due to the shortage of the film pattern. The defect is called a white defect. In the state in which the black-light portion and the white defect are generated by using the semi-transmissive portion of the gray-scale photomask of the semi-transparent film, it is considered that the local film correction is usually performed, for example, by using the laser (10) method or the ion beam (1) B) method. . That is to say, the correction film may be partially formed in a part of the defect, or the area including the white defect portion and the black defect portion of the predetermined area portion may be peeled off in advance, and the correction film may be locally formed again. However, in this state, the material of the correction film is not the same as that of the above-mentioned semi-transmissive film. That is, since the semi-transmissive film for the semi-transmissive portion is infinitely suitable for the above-mentioned partial formation 2130-9781-PF; Ahddub 9 200909996 film method. Therefore, it is necessary to use the ^ ^ , the fruit material (or composition) different from the semi-transparent film as the premise, and select the material of the cow with the film. In this state f, it is necessary to select the material of the correction film to form the wind and 膘; and to make the local correction part = penetration = overshoot, and to use the gray scale mask in the other part (uncorrected part) The exposure machine in the case where the transfer body is turned into a pattern is generally used in a state in which the ray is formed into a liquid, and the length of the i-ray to the g-ray (wavelength 365 to 436 nm) is generally used. In these exposures, it is required that the general area is larger than that of the semiconductor. Therefore, in order to secure the amount of light, it is advantageous to use the exposure light having a wavelength region in the use of the exposure light without using a single wavelength. In addition, the exposure light of the exposure machine is placed in a plurality of states, and is not set as the exposure light having the wavelength region covering the jade ray to the § ray, and the maximum intensity of the ray is present. The exposure machine, the exposure machine with the highest g-ray intensity, and the like. Further, the wavelength characteristics of the exposure machine light source are changed over time. Because of this, a.. mouth, even if the optical wavelength characteristics of a given wavelength are considered in advance, the correction 3, dt, , , material, film thickness, etc. are selected so that the transmittance of the partial correction portion is the same as that of the exposure light. The transmittance of the exposure light in the correction portion also varies the light transmittance when the wavelength of the exposure light is different. Therefore, the transmittance of the corrected portion and the uncorrected portion is not completely determined during the actual exposure. If the transmittance between the corrected portion and the uncorrected portion is deviated, then in the case of the pattern transfer, the resist on the transferred body of the portion causes an unexpected film thickness difference. The above problem will be explained with reference to Fig. 9. Fig. 9 shows a conventional example of a modification method of 2130-9781-PF; Ahddub 10 200909996. The mask pattern of Fig. 9(a) is formed into a pattern The light-shielding portion 21, the light-transmitting portion 22, and the semi-transmissive portion Μ. The light-shielding portion 21 is configured to have at least a light-shielding film μ on a transparent substrate (not shown), and the light-transmitting portion 22 is formed by exposing the transparent substrate The substrate is formed of a semi-transmissive lens 3523 and has a semi-transmissive film (9) on the transparent substrate. Next, the semi-transmissive film 26 in the semi-transmissive portion 23 generates defective portions 51, 52 (5 ι is white defect) In the state of the 52-series black defect, the black defect portion 52 is removed from the semi-transmissive film of a predetermined size including the defect, and becomes a white defect 1 (FIG. 9(b)), as will be described above. On the other hand, the film 2' is formed on the white defect portions 51 and 56 (Fig. 9(c)). When the transfer to the transfer target is performed using the gray scale mask having such a correction portion, a film thickness portion of the thick film is formed on the transfer target in a region corresponding to the light shielding portion of the mask. 34a' forms a thin film thickness portion 34b in a region corresponding to the semi-transmissive portion, and a film-free resist pattern 34 is formed in a region corresponding to the light transmitting portion (Fig. 9(d)). If the transmittance between the corrected portion and the uncorrected portion of the semi-transmissive portion of the mask is completely inconsistent and there is a deviation, even if the transmittance difference is within the allowable range of the mask specification, the pattern transfer is performed. At the time, the resist pattern 34 on the portion to be transferred on the portion, at portions 34c, 34d and other portions corresponding to the correction portion, produces a film thickness of two: Figure 10 shows an example of other photoresist patterns. _ 1 〇 (4), in the white defect portion 51 and the black defect portion 52 generated by the semi-transmissive portion 23, the semi-transmissive film of a predetermined size including the black defect 52 is removed and becomes a white defect. White defect corrected by correction film 27", 2130-978l-PF; Ahddub 11 200909996 56 (Fig. 10(c)). When pattern transfer to the object to be transferred is performed using a gray scale mask having such a correction portion, on the object to be transferred, in the region corresponding to the light shielding portion of the mask Forming a thick portion of the film thickness of the thick film, forming a film thickness material 35b in a region corresponding to the semi-transmissive portion. Then, in actual exposure, if the correction portion of the semi-transmissive portion of the light army is uncorrected Part: If there is a deviation in the k-rate of 70, the resist pattern 35 on the transferred body of the portion is in the film thickness corresponding to the portion 35c, the wish portion and the other portion corresponding to the correction portion. In addition, as described above, when the material and film thickness of the correction film are determined by the light transmittance, the phase difference of the exposure light in this portion is not the same as the uncorrected portion. It is different. This system also serves as the cause of the unexpected difference in the resist pattern on the transferred body between the corrected portion and the uncorrected portion. When the resist pattern on such a transferred body produces a slight difference in position, it does not affect the performance as a gray scale mask (that is, even if the gray scale mask is used for pattern switching) In the inspection process of the pattern on the transferable body, the detection is a suspected defect. Therefore, the inspection efficiency is lowered, and the production efficiency of the liquid crystal display device or the like is lowered, which is inconvenient in manufacturing. The present invention has been made in view of the foregoing state of the art; to provide an accident in which a pattern inspection on the object to be transferred does not detect a suspected defect and the month b is appropriately corrected in the present reading. It is the first purpose to correct the defect of the gray-scale mask of the defect of the first part of the cattle. Further, the present invention provides a defect correction method for a gray scale mask which is suitable for the defect correction method 2130-9781-PF; Ahddub 200909996. Further, the present invention provides a gray scale mask which moderately corrects a defect occurring in a half, as a third object. Further, the present invention provides a printing method using the aforementioned gray scale mask as the fourth object. In order to solve the above problems, the present invention has the following advantages. Each of the (structure 1)-type gray-scale mask defect correction method has a light-shielding first portion and a semi-transmissive portion that reduces the amount of transmission light used for the exposure light of the (4) and is transferred. A defect correction method for forming a gray scale mask having a film thickness in a continuously different resist pattern, characterized in that: eight has a predetermined light transmittance by exposure light for a predetermined wavelength. a process of forming the semi-transmissive portion and forming a defect portion in the semi-transmissive portion to define the defective portion; forming a semi-transmissive portion including the defect portion and removing light transmitted through the light-shielding portion a process of at least the semi-transmissive film of the semi-transmissive portion of the region surrounded by the side; and the same as before, in the region where the semi-transmissive film is removed to form a material or a semi-transparent film The process of semi-transparent correction film. (Structure 2) has a shading portion, a through-species gray scale mask defect correction method 23l 978 ^9781-PF; Ahddub 13 200909996 light portion and reducing the amount of light used for exposure light used in the reticle is established A defect correction method for a half-light transmitting portion and a gray-scale mask for forming a resist pattern having a film thickness in stages or continuously on the transfer target is characterized by: eight by exposure for a predetermined wavelength a semi-transmissive film having a predetermined light transmittance, forming the semi-transmissive portion, and forming the light-shielding portion at least by a light-shielding film having a predetermined light-shielding property for the exposure light, and generating the light-shielding portion in the semi-transmissive portion a process of specifying a defect portion by a defect; a process of removing a film existing in a rectangular region including a semi-transmissive portion generated by the defect portion; and forming at least a material or a composition different from the foregoing in a region where the film is removed The process of the semi-transparent correction film of the semi-transparent film. (Structure 3) The defect correction method of the gray scale mask described in the structure 2, wherein the semi-transmissive film and the light-shielding film which are present in the rectangular region are removed in the process of removing the film In the process of the correction film, the semi-transmissive correction film is formed in the semi-transmissive portion, and the light-shielding correction film is formed in the light-shielding portion. (Structure 4) The method for correcting a defect of a gray scale mask according to any one of the configurations 1 to 3, characterized in that: the semi-transmissive film and the semi-translucent correction film are formed by different film formation The film formation was carried out by the method. (Structure 5) Structure 1 5 4 Φ / κ κ 4A - Item of the gray-scale reticle defect correction side 2130-978l-PF; Ahddub 200909996 method =, characterized by: the aforementioned semi-transparent film and the aforementioned half The phase difference of the light-transmitting correction film with respect to the exposure light is 50 degrees or more. (Structure 6) The defect correction method of the gray scale mask according to any one of the configurations 1 to 5. It is characterized in that, in the process of removing the semi-transmissive film or film, the size of the removed region is not more than 5 Å in any direction. (Structure 7) The defect correction method of the gray scale mask according to any one of the structures 1 to 6, wherein the source, the drain, and the channel portion of the gray-scale photomask-based thin film transistor are used. (Structure 8) The defect correction method of the gray scale mask according to any one of the first to sixth aspect, wherein the gray scale mask is used for the manufacture of a path sound or a hole of a thin film transistor.构造 (Structure 9) A method of manufacturing a heavy gray scale mask, comprising: a defect correction process by the defect correction method according to any one of 1 to 8. (Structure 10) A gray scale mask having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion for reducing the amount of light used for exposure light of the mask to be used for a predetermined amount A gray scale mask that forms a resist pattern having a film thickness in stages or continuously is characterized in that the gray scale mask has an exposure light 2130 that reduces a wavelength region in a range of at least #365 to 436mn. The permeation amount of 9781-PF/Ahddub 15 200909996 is a plurality of semi-transmissive portions which are quantitatively the same as the light transmissive two of the other semi-transmissive portions and which are different from the other half by the material or composition. The light transmissive portion is formed by a single semi-transmissive film. <Early (Structure 11) - A pattern transfer method' is characterized in that: a gray scale mask produced by the manufacturing method of § or a square of H is used. The ash mask is exposed, and the exposure light of a predetermined wavelength is exposed on the object to be transferred to form a resist pattern having a different thickness. If the essence is modified by the method of the present invention, if the umbrella is a package, the defect correction method is
=二之缺陷部分之半透光部，除去藉由遮光 邛和透光部之至少一邊所勿R 區域之半透光部整體之半 =、錢·^'之區域，形成素材或組成不同於前述半 半透光性之修正膜。或者是除去存在於包含前述 缺fe部分所產生之丰读^1都 座生之丰透先J之矩形狀之區域之膜，在該除 去之區域，至少形成前述半透光性之修正膜。 :行此種缺陷修正，結果，藉由單一之修正膜 則述缺陷部分所產生之半透光部之整體，因此，在進行轉 印至被轉印體上之圖案轉印時’無法在對應於形成修正膜 之丰透光部區域之阻劑上，形成位差。可以藉此而在光罩 使用者進行形成於被轉印體上之阻劑圖案之缺陷檢查時， ^除因為在習知之阻劑上形成微小之位差而檢測成為疑似 ㈣之意外’能夠適度地修正發生於半透光部之缺陷。接 著在液aa顯不裝置等之製造，可以避免由於檢測出疑似 2130-9781-PF；AhcJdub 16 200909996 * /缺陷所造成之檢查效率之降低、甚至是由於這樣所造成之 生產效率之降低。 此外’如果藉由本發明之灰階光罩之製造方法的話， 則可以藉由具有適用此種本發明之缺陷修正方法之缺陷修 正製程，而得到適度地修正發生於半透光部之缺陷的灰階 光罩。 此外，如果藉由本發明之灰階光罩的話，則具有降低 至少具有365ιιιπ〜436ιιπι範圍内之波長區域之曝光用光之 透過量來成為既定量之複數個半透光部，該複數個半透光 部之一部分係具有概略相同於其他半透光部之光透過率， 並且，藉由素材或組成不同於其他半透光部之單—之半透 光膜而形成，例如在前述複數個半透光部之一部分成為藉 由前述單一之半透光膜而修正產生缺陷之該半透光部之^ 透光部之狀態下，該修正之半透光部係得到幾乎相同於其 他半透光部之灰階效果，因此，得到適度地修正發生於半 透光部之缺陷的灰階光罩。 此外，正如前面之敘述，可以藉由使用適度地修正發 生於半透光部之缺陷的灰階光罩，進行轉印至被轉印體^ 圖案轉印，而形成無圖案缺陷之良好之轉印圖案。並且， 在進行形成於被轉印體上之阻劑圖案之缺陷檢查 太 J 亚無 檢測出疑似缺陷之意外，因此，可以避免由於檢測出 疑似缺陷所造成之檢查效率之、甚至是由 於 ,, <依所造 成之生產效率之降低。 17 2130-9781-PF；Ahddub 200909996 【實施方式】 在以下，根據圖式而說明用以實施本發明之最佳形態。 [第1實施形態] 圖1係用以說明使用藉由本發明所造成之灰階光罩之 圖案轉印方法之剖面圖。此外，® 2係依照製程順序地顯 示本發明之灰階光罩之缺陷修正方法之第i實施形態之俯 視圖。= the semi-transmissive portion of the defective portion of the second portion, except for the half of the semi-transmissive portion of the R-region of the light-shielding 邛 and the light-transmitting portion, and the area of the half of the semi-transmissive portion The semi-translucent correction film described above. Alternatively, the film which is present in a rectangular region of the first-pass-through J which is formed by the rich portion of the above-mentioned missing portion is removed, and at least the semi-translucent correction film is formed in the removed region. When such a defect correction is performed, as a result, the entire semi-transmissive portion generated by the defective portion is described by a single correction film, and therefore, when the transfer to the transfer target is performed, the image cannot be correspondingly A level difference is formed on the resist forming the region of the transparent portion of the correction film. In this way, when the mask user performs the defect inspection of the resist pattern formed on the object to be transferred, it is possible to detect the suspected (four) accident because of the slight difference in the conventional resist. The ground correction occurs in the defect of the semi-transmissive portion. Subsequent to the manufacture of the liquid aa display device or the like, it is possible to avoid a decrease in the inspection efficiency due to the detection of the suspected 2130-9781-PF; AhcJdub 16 200909996 * / defect, or even a decrease in the production efficiency caused by such a result. Further, if the manufacturing method of the gray scale mask of the present invention is carried out, it is possible to obtain a gray which appropriately corrects the defect occurring in the semi-transmissive portion by the defect correction process having the defect correction method of the present invention. Order mask. Further, according to the gray scale mask of the present invention, the amount of light for exposure light having a wavelength region in the range of 365 ι to 436 ιι is reduced to a predetermined number of semi-transmissive portions, the plurality of semi-transparent portions. One part of the light portion has a light transmittance substantially the same as that of the other semi-light-transmitting portions, and is formed by a material or a semi-transmissive film having a composition different from that of the other semi-transmissive portions, for example, in the above plurality of One of the light-transmitting portions is a state in which the light-transmissive portion of the semi-transmissive portion which is defective is corrected by the single semi-transmissive film, and the corrected semi-transmissive portion is almost the same as the other semi-transparent portions. The gray scale effect of the portion, therefore, a gray scale mask that moderately corrects the defects occurring in the semi-transmissive portion is obtained. Further, as described above, it is possible to perform transfer to the transfer target pattern by using a gray scale mask which appropriately corrects the defect occurring in the semi-transmissive portion, thereby forming a good transition without pattern defects. Printed pattern. Further, the defect inspection of the resist pattern formed on the object to be transferred is not detected as a defect of the suspected defect, and therefore, the inspection efficiency due to the detection of the suspected defect can be avoided, or even due to, <Reduction in production efficiency. 17 2130-9781-PF; Ahddub 200909996 [Embodiment] Hereinafter, the best mode for carrying out the invention will be described based on the drawings. [First Embodiment] Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask by the present invention. Further, the ® 2 is a plan view showing the first embodiment of the defect correction method of the gray scale mask of the present invention in order of the process.
圖1所V之本發明之灰階光| 2 〇 (並無顯示在此修正 之缺陷區域)係使用來製造例如液晶顯示裝置(LCD)之薄膜 電晶體（TFO或彩色渡光片或電顯示器面板（pDp)等，在 圖1所示之被轉印體30上，形成膜厚呈階段或連續地不同 之阻劑圖案33。此外，在圖！中，符號⑽、32β係在被 轉印體30，表示層積於基板31上之膜。 士又I5白光罩20係具體地具有：在該灰階光罩別之使用 時而對於曝光用光進行遮光（透過率概略A G%)之遮光部 2卜露出透明基板24之表面而透過曝光用光之透光部μ 以及半透光部23所構成。半透光部23係在透光部之曝光 =先之透過率成為1Dn時，降低至透過率最好 疋40 6純度。半透光部23係在玻璃基板等之透明基板 I4上’形成光半透過性之半透光膜26所構成。此外，在 產生於半透光部23之丰读去挝9β七 之丰透先膜26之缺陷區域，形成藉由 本心明所造成之修正膜？ 明基…設置遮光遮光部21係在透 ,闽。 置遮先性之遮光膜25所構成。此外，圖i 及圖2所示之遮光9 ° 、透光°卩22以及半透光部23之圖 2130-978l-PF；Ahddub 18 200909996 並非本發明 案开;^狀係根本只是代表性之某一例子，當 限定於此之意思。 .作為半透光膜26係列舉鉻化合物、在目石夕化物化合物、 Si W、A1等。其巾，在鉻化合物，有氧化路（c他）、氮化 鉻(crNx)、氧氮化鉻(Cr0xN)、氟化鉻(CrF。、或者是在這 些包含碳或氫者。料，作為㈣化物化合物係除了心仏 以外，還包含MoSi之氮化物、M〇Si之氧化物、Μ〇“之氧 化氣化物、MoSi之碟化物等。此外，作為遮光膜25係列 牛Cr Si W、Ai等。遮光部21之透過率係藉由遮光膜 25之膜材質和膜厚之選定而進行設^。此外，半透光部23 之透過率係藉由半透光M 26之膜材f和膜厚之選定而進 行設定。 在使用鈾述之灰階光罩2 〇時，於遮光部21，實質無 透過曝光用光，於半透光部23,減低曝光用光。因此，形 成於被轉印體30上之阻劑膜（正型光阻膜）係在轉印後，在 、’二過顯衫呀，在對應於遮光部2丨之部分，膜厚變厚，在對 應於半透光部23之部分，膜厚變薄，在對應於透光部22 之°卩刀，形成貫質無產生殘留膜之阻劑圖案33(參考圖 1)。在該阻劑圖案33，將在對應於半透光部23之部分而 使得膜厚變薄既定量之效果，稱為灰階效果…卜，在使 用負型光阻劑之狀態下，必須進行考慮對應於遮光部和透 光邓之阻劑膜厚呈逆轉之設計，但是，也在此種狀態下， 充分地得到本發明之效果。 接著’在圖1所示之阻劑圖案33之無膜部分，在被轉 2130-9781-PF;Ahddub 19 200909996 印體3〇之例如膜32AA 32B’實施第！蝕刻，冑由灰化等 而除去阻劑圖帛33之薄膜部分，在該部分，於被轉印體 30之例如膜32Β，實施第2姓刻。像這樣使用1片之灰階 光罩20，實施習知之光罩2片份量之製程，減少光罩片數。 接著，就藉由第1實施形態所造成之灰階光罩之缺陷 修正方法而進行說明。在第1實施形態，藉由在透明基板 24上，成膜包含鉬矽化物之半透光膜26(曝光用光之透過 率50/〇和以鉻作為主成分之遮光膜25，施行既定之圖案 化，而使用具備遮光部2卜透光部22及半透光部23之丁叮 基板製造用之灰階光罩。在第！實施形態，正如圖2(a)所 示，作為光罩圖案之某一例子係各個圖案使用藉由框狀之 遮光部21而包圍矩形之半透光部23之區域之形狀。此外， 就製造方法而言，敘述於後面。 之缺陷修正 說明產生於前述灰階光罩之半透光部23 方法。 (1)就製造之灰階光罩而言，你用杜阶从尤莊 °便用缺陷檢查裝置而進行 光罩圖案之缺陷檢查。接著，在半透光部23來存在缺陷之 時，特定該缺陷區域之位置資訊和形狀資訊。該狀能下之 缺陷係相對於正常之半透光部而使得半透光膜之料變小 或者是半透光膜具有欠缺之部位，阳….^ 1位因此，成為例如曝光用 光之透過量大於正常之半透光部之部 刀之所明白缺陷以及 起因於遮光膜成分之附著等而曝光 噃尤用先之透過量小於正常 之半透光部之部分之所謂黑缺陷。 進行缺陷之檢查，結果，在由光 尤卓上之+透光膜26所 213〇-9781-PF/Ahddub 20 200909996 組成之複數個半透光部23中之一部分，存在圖2(〇所示 之白缺陷部分51和黑缺陷部分52。 (2)接著，在第1實施形態之狀態下，成為包含前述缺 陁邓/刀51、52之半透光部，除去藉由遮光部21所包圍之 區域之半透光部23整體之半透光膜26(圖2(b))。作為半 透光膜26之除去裝置係可以將也使用作為後面敛述之％ 正膜之成膜裝置之FIB裝置（最好是⑽之氣體輔助姓刻^ 、i用仁是，也可以使用例如其他之雷射裝置等。姓 果’除去藉由遮光部21所包圍之區域内之整體之半透絲 26,在除去之區域53,露出透明基板24。 透先^ 之成=接：’決定在前述除去之區域53用以形成修正膜The gray scale light of the present invention of FIG. 1 is used to fabricate a thin film transistor such as a liquid crystal display device (LCD) (TFO or color light-emitting sheet or electric display). A panel (pDp) or the like is formed on the transfer target body 30 shown in Fig. 1 to form a resist pattern 33 having a film thickness which is different in stages or continuously. Further, in the figure, symbols (10) and 32β are transferred. The body 30 is a film laminated on the substrate 31. The I5 white mask 20 specifically has a light-shielding (light transmittance AG%) for exposure light when the gray scale mask is used. The portion 2 is formed by exposing the surface of the transparent substrate 24 and transmitting the light transmitting portion μ and the semi-transmissive portion 23 for exposure light. The semi-transmissive portion 23 is exposed when the transmittance of the light transmitting portion is changed to 1 Dn. The transmittance is preferably 疋406. The semi-transmissive portion 23 is formed by forming a semi-transmissive semi-transmissive film 26 on a transparent substrate I4 such as a glass substrate. The reading of the defective area of the first film 26 of the 9β seven of the Laos, forming a correction caused by Ben Xinming The film is provided with a light-shielding portion 21, which is provided with a light-shielding film 25, and a light-shielding film 25, which is shown in FIGS. 23 Figure 2130-978l-PF; Ahddub 18 200909996 is not the case of the present invention; the shape is only a representative example, and is limited to this. As a semi-transparent film 26 series of chromium compounds,目石夕化化合物, Si W, A1, etc. Its towel, in the chromium compound, has an oxidation path (c), chromium nitride (crNx), chromium oxynitride (Cr0xN), chromium fluoride (CrF, or In addition to the palpitations, the (tetra) compound compound contains a nitride of MoSi, an oxide of M〇Si, an oxidized vapor of lanthanum, a disk of MoSi, and the like. The light-shielding film 25 series of cattle Cr Si W, Ai, etc. The transmittance of the light-shielding portion 21 is set by the film material and film thickness of the light-shielding film 25. Further, the transmittance of the semi-transmissive portion 23 is The setting is made by the selection of the film material f and the film thickness of the semi-transmissive M 26 . When using the gray scale mask 2 of uranium In the light shielding portion 21, the light for exposure is substantially not transmitted, and the light for exposure is reduced in the semi-transmissive portion 23. Therefore, the resist film (positive photoresist film) formed on the transfer target 30 is after transfer In the portion corresponding to the light-shielding portion 2, the film thickness is increased, and the film thickness is thinner at a portion corresponding to the semi-transmissive portion 23, corresponding to the light-transmitting portion 22. The boring tool forms a resist pattern 33 (see FIG. 1) in which a residual film is not formed, and in the resist pattern 33, the film thickness is reduced in a portion corresponding to the semi-transmissive portion 23, and the effect is quantitative. It is called a gray-scale effect... In the state where a negative-type photoresist is used, it is necessary to consider a design in which the film thickness corresponding to the light-shielding portion and the light-transmitting agent is reversed, but in this state, it is sufficiently obtained. The effect of the present invention. Next, the film-free portion of the resist pattern 33 shown in Fig. 1 is subjected to the transfer of 2130-9781-PF; Ahddub 19 200909996 print 3, for example, film 32AA 32B'! After the etching, the film portion of the resist pattern 33 is removed by ashing or the like, and in this portion, for example, the film 32 of the transfer target 30 is subjected to the second surname. As described above, the one-piece gray scale mask 20 is used, and the conventional photomask 2 sheet size process is implemented to reduce the number of masks. Next, the defect correction method of the gray scale mask caused by the first embodiment will be described. In the first embodiment, a semi-transmissive film 26 containing molybdenum telluride (a transmittance of 50/Å for exposure light and a light-shielding film 25 containing chromium as a main component) is formed on the transparent substrate 24, and the predetermined method is performed. In the case of patterning, a gray scale mask for manufacturing a butadiene substrate having the light-shielding portion 2, the light-transmitting portion 22, and the semi-transmissive portion 23 is used. In the second embodiment, as shown in Fig. 2(a), the mask is used as a mask. In a certain example of the pattern, the shape of the region surrounding the rectangular semi-transmissive portion 23 by the frame-shaped light shielding portion 21 is used for each pattern. Further, the manufacturing method will be described later. The method of the semi-transmissive portion 23 of the gray scale mask. (1) In the case of the gray scale mask manufactured, you use the Du order from the Yuzhuang to use the defect inspection device to perform the defect inspection of the mask pattern. When there is a defect in the semi-transmissive portion 23, the position information and the shape information of the defect region are specified. The defect under the shape is such that the material of the semi-transmissive film becomes smaller or half with respect to the normal semi-transmissive portion. The light-transmissive film has a missing portion, and the yang ....^ 1 position is therefore an example. The amount of light transmitted by the exposure light is larger than that of the normal half-light-transmissive portion and the adhesion of the light-shielding film component, etc., and the exposure is smaller than the portion of the normal semi-transmissive portion. Defects. Inspecting the defects, as a result, there is a part of the plurality of semi-transmissive portions 23 composed of 213〇-9781-PF/Ahddub 20 200909996 on the light-transparent film 26, and there is a figure 2 The white defect portion 51 and the black defect portion 52 are shown. (2) Next, in the state of the first embodiment, the semi-transmissive portion including the defect Deng/knife 51, 52 is removed, and the light shielding portion 21 is removed. The semi-transmissive film 26 as a whole of the semi-transmissive portion 23 in the surrounding region (Fig. 2(b)). As the removing device of the semi-transmissive film 26, a film forming device which is also used as a % positive film which will be described later can be used. The FIB device (preferably (10) is a gas-assisted surname, and i is used, and other laser devices, for example, may be used. The surname 'except the whole semi-transparent area in the region surrounded by the light-shielding portion 21 The wire 26, in the removed region 53, exposes the transparent substrate 24. It is decided to form a correction film in the aforementioned removed region 53
4 ::置和成膜素材(組成)。在第1實施形態，適用FIB 衣置’來作為成膜梦晉。 ™ ^ 、、置此外，由所謂適合於藉由F ιΒ | 置所造成之成膜並且以既定川裝 -致於I❹B & m主儘可錢使得透過率 於’，.、㈣且無進行修正之半透光部之咖半透光膜 觀點來看的話，則最好是 、 之素材，在第^實…“進订先透過率之控制 由⑽置，成為碳。碳係不僅是適合於藉 透過車之成膜且藉由膜厚之控制而容易進行光 透過率之控制，而且，在易進仃先 材。但是m… 庇附者強度也良好之素 ^ 1糸曝光用光相對於透明基板之相位差 呈不同，因此，在習知之缺陷修 才反之相位差 膜之膜厚而使得兩者之透 / p使疋選擇修正 上，製作阻劑位差，但是，致，也可能在被轉印體 消除此種問題，所以，變得理相错由本發明的話’則能夠 …。例如半透光膜和修正膜 2l30-9781-PF;Ahddub 2ι 200909996 -之相位差係在50度以上之狀能 著。在未滿度之狀態下，產二之效果變得顯 以是缺陷檢杳f f ;兄分之膜位差係可 面，在半透陷之精度内。另-方 光該光罩時之阻劑膜厚差&過9G度時，產生於曝 造來造成阻礙之狀態發此有：：晶顯示裝置等之製 位差（相對於、# 因此，在透光膜和修正膜之相 位差C相對於透明基板之相位 時，本發明之效果係最顯著。成為50〜Μ度 ⑷為了考量在使用該光罩時之曝光機之 既疋之波長，使得Mosi 、於 -致，因此，決定…贈 膜之光透過率呈 、疋奴修正肤之膜厚和用 條件（每單位 珉膜k個之成艇 狀能下… 在使用m裝置之成膜之 ，、下’控制膜厚之參數係主要是離子束之每單 摻雜量(比例於成膜時之電流值）。 在此’就前述之FI β嵬罟 _…、 正如圖3所示，且有.產生Γ &兄明。該FiB袭置係 ^ . 4〇 ^ Λ 產生Ga+離子之離子源4卜電磁光 用以中和Ga+離子之電子之電子搶43、釋 7體之㈣用氣體搶49、以及釋出“體 44。電磁光學系42係以來自離子源』產生之Ga+離子， 來作為離子束47。該離子束47係藉由掃描放大器 行掃描。 疋 接著，藉由在Π台座45上，載置成為被修正對象之 火I1白光罩20 ’移動χγ台座45，而使得施行該灰階光罩 之修正之缺陷區域，移動至離子束照射區域。接著，藉由 22 2130-9781-PF;Ahddub 200909996 離子束47而掃描施行修正之缺陷區域，藉由檢測此時產生 之-次離子之二次離子檢測胃48之作用而檢測施行修正 之缺陷區域之位置。離子束47係藉由透過電磁光學系42’ 照射於施行灰階光罩2◦之修正之缺陷區域，而實施修正膜 之形成或黑缺㈣域之半透光膜之除去。此外，離子束之 束徑係0 · 1 // in 0以下。 在形成修正膜之狀態下，透過電磁光學系42而釋出離 c :束47 ’同％ ’藉由氣體搶44而釋出芘氣體。藉此而使 得祐氣體接觸到離子束47，進行聚合（化學反應），在離子 束47之照射區域，堆積修正膜而進行成膜。 此外，在除去半透光膜之狀態下，藉由利用姓刻用氣 體搶49來釋出石氣體，在該狀態下，透過電磁光學系42 來照射離子束47,而除去前述之半透光膜。 (5)以前述除去之區域53(圖2(b))作為修正膜之成膜 ，區：、，將需要之位置資訊等，輸入至m裝置，同時，輸 L人前述之成膜條件，藉由該成膜條件，而在成膜區域（前述 之區域53)，形成碳之修正膜27(參考圖2(c))。 接著’在使用施行藉由正如以上之帛丨實施形態所造 成之缺陷修正之灰階光罩而進行至被轉印體3()(參考圖D 之轉印時，於被轉印體30上，在對應於光罩之遮光部21 之區域，形成厚膜之阻劑膜厚部分咖，在對應於形成修 正膜27之區域53之區域’形成薄膜之阻劑膜厚部分伽， 在對應於透光部之區立或，形成無膜之阻劑圖案Μ (圖 2(d))。此外，並無顯示於圖2，但是，即使是無缺陷且無 2130-9781-PF/Ahddub 23 200909996 進行修正之對座 ^在存在於其他部位之半透光部 形成时& 、 形成薄膜之阻劑膜厚部分。 果，/:由於'^上之第]實施形態所造成之缺陷修正，結 剧述缺陷部分之所產生之半透光部之整體，形成單 在正膜巧，因此，在進行至被轉印體上之圖案轉印時， 成位差。所卩/之'"透先部之區域之阻劑上，無形 劑罩使用者進行形成於被轉印體上之阻 之位罢品认、 卫…口為在習知之阻劑上形成微小 祆測成為疑似缺陷之音外發 ^ ^ 4 ^ , 〜、卜發生，此夠適度地修正 知生於+透光部之缺陷。 此外’在除去包含前述缺 除去之Ρ β ^ 扎缺刀之丰透光膜之製程而 能Γ 係適合為在任何方向也不超過5。㈣之狀 心。除去包含缺陷部分 人成A t卜軒 °。或之+透光膜整體，因此，適 口成為比較小之半透光部 道邻係—加# L正方法。例如抒丁基扳之通 、邛係一般適合於該條件， 此取適合為本發明。在成 為超過50“之大小之區域時’在藉 iF日替η主·ΙΒ裝置而形成修 膜夺，產生合併及聯繫複數次成膜操作之需界 —分之位置整合，需要附加之考量。 兄界 此外，前述之灰階料係 汲極及通道部f造用。才… 寻膜電曰曰體之源極、 、、口丨i仏用。在s亥用途之狀態下， 本發明所造成之缺陷修正，因 ，、‘、了進仃藉由 此外，前述之灰階光罩係也 小 電洞之製造用。也在該用途二: 徑層或 明所造成之缺陷修正而成為理想之圖案大小，：：= 2l3〇-9781-PF；Ahddub 24 200909996 -成為矩形狀’因此，可以適度地控制例如藉由FIB裝置所 4成之成膜條件而變得便利。 此外在第1貫施形態，作為修正膜之成膜裝置係適 用fib装置，但是’成膜裝置係並非當然限定於FIB裝置， 例如也可以適用雷射CVD等之其他成膜裝置。 、 本發明係也提供一種包含藉由以上說明之缺陷修正方 法所造成之缺陷修正製程之灰階光罩之製造方法。 刖述之灰階光罩係可以例如藉由以下之1至3之方法 而侍到。本發明係使用在以下之製造過程而產生於半透光 部之半透光膜之缺陷之修正。 1.猎由準備在透明基板上按照該順序地層積半透光膜 及遮光膜之光罩空白毛胚片’在該光罩空白毛胚片上，形 成對應於遮光部之區域之阻劑圖案，以該阻劑圖案作為光 罩？嶋出之遮光膜’而在半透光膜上，形成遮光部。 妾著藉由在至少包含半透光部之區立或，形成阻劑圖案， 以^且劑圖案作為光罩，钮刻露出之半透光膜，而形成半 透光：及透光部。可以像這樣得到在透明基板上形成藉由 半透光膜所造成之半透光部以及藉由遮光膜和半透光膜之 曰積膜所造成之遮光部、透光部的灰階光罩。 2·藉由準備在透明基板上形成遮光膜之光罩空白毛胚 片’在該光罩空白毛胚片上，形成對應於遮光部之區域之 阻劑圓案，以該阻劑圖案作為光罩，钱刻露出之遮光膜， 而形成遮光膜圖案。接著’在除去阻劑圖案後，於基板之 正们面，成膜半透光膜。接著，藉由在對應於遮光部和半 2130-978l-pF;Ahddub 25 200909996 透先邛之區域，形成阻劑圖宰， ^ ^ @ 以该阻劑圖案作為光罩， 姓刻咸出之半透光膜，而形成诚丄 φ成遮光部和半透光部。可以德 這樣得到在透明基板上形成# 乂像 加、一 ^风猎由+透光膜所造成之半透光 π以及藉由遮光膜和半透光骐 透光部的灰階光罩。 之層積膜所造成之遮光部、 3.藉由在相同於前述2之光罩空白毛胚片上，形成對 應於遮光部及透光部之區域之阻 Λ ^ m 州圓案，以該阻劑圖案作 局九罩，蝕刻露出之遮弁腔， ^ ^ 巡先膜而露出對應於半透光部之區 缺 錯由在除去阻劑圖案後，於基板之 :個面’成膜半透光膜’在對應於遮光部和半透光部之區 域，形成阻劑圖案’以該阻劑圖案作為光罩，姓刻露出之 半透光膜（以及半透光膜和遮光膜），而形成透光部和遮光 部以及半透光部。 ，當然’本發明之灰階光罩之製造方法係不需要限定於 前述1至3之方法。 如果藉由本發明之灰階光罩之製造方法的話，則可以 藉由具有適用前述本發明之缺陷修正方法之缺陷修正製 程’而得到適度地修正發生於半透光部之缺陷之灰階光罩。 [第2實施形態] 圖4係依照製程順序地顯示藉由本發明所造成之缺陷 修正方法之第2實施形態之俯視圖。即使是在第2實施形 態，也使用藉由在透明基板24上成膜包含銦秒化物之半透 光膜26(曝光用光之透過帛5〇%)和以鉻作為主成分之遮光 膜25來施行既定之圖案化而具備遮光部2ι(遮光部⑴、 26 2130-9781-PF；Ahddub 200909996 21b)、透光部22及半透光部23的TFT基板製造用之灰階 光罩。但是’在第2實施形態’正如圖4 (a)所示’作為阻 劑圖案之某一例子係各個圖案使用藉由2個之遮光部 21a、21b及透光部22而包圍半透光部23之區域之形狀。 此外’製造方法係正如前面之敘述。 §兒明產生於前述灰階光罩之半透光部23之缺陷修正 方法。 (1) 就製造之灰階光罩而言，使用缺陷檢查裝置而進行 光罩圖案之缺陷檢查。 進行缺陷之檢查’結果，在由光罩上之半透光膜以所 組成之複數個半透光部23中之—部分，正如圖4⑷所示， 存在白缺陷部分51和黑缺陷部分52。 2l30-9781-PF;Ahddub (4)為了考量在使用該光罩時 之曝光機之波長特性，於 27 200909996 既定之波長，使得MoSi半透光膜和碳修正膜之光透過率呈 -致’因此，決定碳修正膜之膜厚和用以成膜這個之成膜 條件（每單位面積之摻雜量等）。 ⑸以前述除去之區域54作為修正膜之成膜區域，將 需要之位置資訊等’輪入至FIB裝置，同日夺，輸入前述之 成膜條件，藉由該成膜條件，而在成膜區域(區域54)，形 成碳之修正膜27(圖4(c))。 、接著，在使用施行藉由正如以上之第2實施形態所造 成之缺(½修正之灰階光罩而進行至被轉印體抓參考圖1) 之轉印時，於被轉印體3G上，在對應於光罩之遮光部仏、 ^ [域、&成厚膜之膜厚部分33a，在對應於形成修正 …之區域54之區域’形成薄膜之膜厚部分33b，在對 心於透光部之區域’形成無膜之阻劑圖案33(圖4⑷ 外，並無顯示於圖4，徊B b n C疋，即使是無缺陷且無進行修正 之對應在存在於其他部位 之膜厚部分。 +透先#之區域，也形成薄膜 即使是在藉由以上之筮— 之結果，也在前述缺陷;=㈣態所造成之缺陷修正 形成單-之修正膜心之半透光部之整體， 轉印時，在對應於形杯：膜行至被轉印體上之圖案 上，無形成位差。所t 之半透光部之區域之阻劑 體上之阻劑圖案之缺陷檢罩使用者進行形成於被轉印 形成微小之位差而檢測:結因=在習知之阻劑上 度地修正發生於半透光部之缺:缺之思外發生，能夠適 2130-9781-PF;Ahddub 28 200909996 [第3實施形態] 圖5係依照製程順序地顯示藉由本發明所造成之缺陷 修正方法之第3實施形態之俯視圖。即使是在第3實施形 態，也使用藉由在透明基板24上成膜包含鉬矽化物之半透 光膜26(曝光用光之透過率50%)和以鉻作為主成分之遮光 膜25來施行既定之圖案化而具備遮光部21(遮光部2ia、 21b)、透光部22及半透光部23的TFT基板製造用之灰階 光罩。但是，在第3實施形態，正如圖5(a)所示，作為阻 劑圖案之某一例子係各個圖案使用藉由2個之遮光部 21a' 21b及透光部22而包圍半透光部23之區域之形狀。 此外，製造方法係正如前面之敘述。 說明產生於前述灰階光罩之半透光部23之缺陷修正 方法。 (1) 就製造之灰階光罩而言，使用缺陷檢查裝置而進行 光罩圖案之缺陷檢查。 進行缺陷之檢查，結果，在由光罩上之半透光膜26所 組成之複數個半透光部23中之一部分，正如圖5(a)所示， 存在白缺陷部分51和黑缺陷部分52。 (2) 接著，在第3實施形態之狀態下，除去存在於包含 前述缺陷部分5卜52所產生之半透光部23之矩形狀區域 ，半透光膜26及遮光膜25(在此、成為遮光部训之遮光 膜）。作為半透㈣26及遮光膜25之除去t置係分別使用 例如前述之FIB裝置(最好是FiB裝置之氣體辅助蝕刻）。 結果，除去包含前述缺謝51、52所產生之半透光部 2130-9781-PF;Ahddub 29 200909996 23之矩形狀區域(在此、藉由遮光部…和透光部u及遮 ::广之殘留部而包圍之區域)内之半透光膜％及遮光 =Γ 25之—部分’在除去之區㈣，露出透 明基板24(圖5(b))。 ^接著，在前述除去之區，最初形成半透光性 / 2。因此’決定成膜裝置和成膜素材（叙成）。例如 f:於IS第1實施形態，適用Πβ裳置，來作為成膜 裝置’作為成膜素材係成為碳。 ⑷為了考量在使用該光罩時之曝光機之波長特性，於 既定之波長，使得M〇Si半透光膜和碳修正膜之光透過率呈 -致’因此’決定碳修正膜之膜厚和用以成膜這個之成膜 條件（每單位面積之摻雜量等）。 (5)以前述除去之區域τ _ ^•孑作為修正膜之成膜區域， 需要之位置資訊等，輸入至FIB裝置，同時，輸入前述之 成膜條件，糟由該成膜條件，而在成膜區域（區域⑹，形 成碳之修正膜27(圖5(c))。 ' ⑻接著，在相同於前述除去之遮光部训之區域—部 分之同樣區域，藉由FIB裳置而形成遮光性之修正膜Μ(圖 5(d))。在該狀態下，修正膜28之素材係可以不一定相； 於遮光膜25，使用作為遮光臈25且以鉻作為主成分之膜 係適合於藉由ΠΒ裳置所造成之成臈，因此，在第3實施 开少態，也適合成為遮光性之修正膜2 8。 、 在使用施行藉由正如以上之第3實施形態所造成之缺 陷修正之灰階光罩而進行至被轉印體3G(參考圖n之轉印 2130-9781-PF;Ahddub 30 200909996 時，於被轉印體30上，在對應於光罩之 之區域，形成厘瞄+』 尤4 21 a、21 b 區域55(,是、除了分，在對應於形成修正膜27之 之區域，觸==性之修…之區域”) 、、厚刀，在對應於透光部之區域， /成無膜之阻劑圖案。此外，即使是無缺陷且無進行修正 在、丰透先部之區域’也形成薄臈之膜厚部分。 之心使：：：由以上之第3實施形態所造成之缺陷修正 成二 月述缺陷部分之所產生之半透光部之整體， ^成早一之修正膜27,因此，在進行至被轉印體上之圖宰 轉印時，在對應於形成修正膜之半透光部之區域之阻劑 上’無形成位差。所以，在光罩使用者進行形成於被轉印 體上之阻劑圖案之缺陷檢查時，並無因為在習知之阻劑上 形成微小之位差而檢測成為疑似缺陷之意外發生，能夠適 度地修正發生於半透光部之缺陷。 此外，在藉由第3實施形態時，可以除去包含缺陷部 刀之矩形狀區域之膜，在該除去之矩形狀區域，形成修正 膜因此，具有所謂能夠使得修正面積呈一定、例如容易 控制fib裝置之成膜條件等之優點。 【圖式簡單說明】 圖1係用以說明使用本發明之灰階光罩之圖案轉印方 法之剖面圖。 圖2 ( a )至圖2 ( d)係依照製程順序地顯示藉由本發明 所造成之缺陷修正方法之第丨實施形態之俯視圖。 31 2130-9781-PF/Ahddub 200909996 圖3係顯示FIB裝置之構造之概略側視圖。 圖4 (a )至圖4 (d )係依照製程順序地顯示藉由本發明 所造成之缺陷修正方法之第2實施形態之俯視圖。 圖5(a)至圖5(d)係依照製程順序地顯示藉由本發明 所造成之缺陷修正方法之第3實施形態之俯視圖。 圖6(a)至圖6(c)係顯示使用灰階光罩之TFT基板之製 造製程之概略剖面圖。 圖7(a)至圖7(c)係顯示接續於圖6製造製程之製造製 程之概略剖面圖。 圖8係顯示習知之微細圖案形式之灰階光罩之某一例 子之俯視圖。 圖9(a)至圖9(d)係依照製程順序地顯示習知之缺陷 修正方法之俯視圖。 圖1 〇 (a)至圖1 〇 (d)係依照製程順序地顯示習知之缺 fe修正方法之其他例子之俯視圖。 【主要元件符號說明】 2〜閘極電極； 4〜第1半導體膜； 1〜玻璃基板； 3〜閘極絕緣膜； 6〜 源極/汲極用 金屬 6b、 -源極/ 及極： ， 7 a〜第1阻劑圖 案； 1 〇〜灰階光罩； 11a 〜遮光部； 5〜第2半導體膜； G a〜源極/汲極； 7〜正型光阻臈； 7b〜第2阻劑圖案 11〜遮光部； 2130-9781-PF；Ahddub 32 200909996 11 b〜遮光部； 1 2〜透光部； 13〜 半透光部； 13a〜遮光圖案； 13b' 〜透光部； 20〜灰階光罩； 21〜 遮光部； 21 a〜遮光部； 21b， 〜遮光部； 22〜透光部； 23〜 半透光部； 2 4〜透明基板； 25〜 遮光膜； 26〜半透光膜； 2 7〜修正膜； 28〜修正膜； 30〜 被轉印體； 31〜基板； 32A〜膜； 32B〜膜； 33〜 阻劑圖案； 33a〜厚膜之阻劑膜厚部分 34〜 阻劑圖案； 33b〜薄膜之阻劑膜厚部分 34c〜部分； 34a〜厚膜之膜厚部分； 34d〜部分； 34b〜薄膜之膜厚部分； 35〜 阻劑圖案； 35a〜厚膜之膜厚部分； 35c〜部分； 35b〜薄膜之膜厚部分； 35d〜部分； 41〜離子源； 42〜 電磁光學系； 43〜電子槍； 44〜 氣體搶； 45〜XY台座； 4 6〜 掃描放大器； 47〜離子束； 4 8〜 二次離子檢測器 ，4 9〜Ί虫刻用氣體搶； 51〜 白缺陷部分； 52〜黑缺陷部分； 53〜 區域， 5 4〜區域； 55〜 區域， 5 6〜白缺陷。 2130-9781-PF;Ahddub 334 :: Set and film material (composition). In the first embodiment, FIB clothing is applied as a film forming dream. TM ^ , , , In addition, by the so-called film formation caused by F Β Β 并且 并且 并且 并且 并且 并且 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既 既In the case of the semi-transparent film of the semi-transparent portion, it is better to use the material. In the first step, the control of the transmittance is set by (10) to become carbon. The carbon system is not only suitable. It is easy to control the light transmittance by film formation by the film and by the control of the film thickness, and it is easy to enter the material. However, the strength of the occupant is also good. The phase difference of the transparent substrate is different. Therefore, in the conventional defect, the film thickness of the retardation film is reversed, so that the penetration/p of the two is corrected, and the resist difference is made. However, it is also possible This problem is eliminated in the transfer target body, so that the phase difference can be made by the present invention. For example, the semi-transparent film and the correction film 2330-9781-PF; Ahddub 2ι 200909996 - the phase difference is 50 degrees. The above can be seen. Under the condition of less than full degree, the effect of the second production becomes obvious. It is the defect inspection ff; the film position difference of the brother is measurable, and it is within the accuracy of the semi-transparent trap. The other side of the mask is the difference in the thickness of the resist film when the mask is over. The state of the obstruction is as follows: the positional difference of the crystal display device or the like (relative to #, therefore, the effect of the present invention is most remarkable when the phase difference C of the light-transmitting film and the correction film is relative to the phase of the transparent substrate To become 50~Μ (4) In order to consider the wavelength of the exposure machine when using the reticle, Mosi, and so on, therefore, the light transmittance of the film is determined, and the film thickness of the 疋 slave correction skin is determined. Conditions and conditions (k-shaped per unit of enamel film... In the film formation using m device, the parameter of controlling the film thickness is mainly the amount of each doping of the ion beam (proportion to film formation) The current value of the time). Here, the above-mentioned FI β嵬罟_..., as shown in Fig. 3, and the resulting Γ & brother. The FiB attack system ^. 4〇^ 产生 produces Ga+ ions The ion source 4b electromagnetic light is used to neutralize the electrons of the Ga+ ion, and the electrons are grabbed, and the 7th body is used. (4) The gas is used to grab 49, and the body is released. 44. The electromagnetic optical system 42 is a Ga+ ion generated from an ion source as an ion beam 47. The ion beam 47 is scanned by a scanning amplifier. Then, by placing on the pedestal 45, it is placed. Correcting the object fire I1 white mask 20' moves the χ γ pedestal 45, so that the modified defect area of the gray scale reticle is moved to the ion beam irradiation area. Then, by 22 2130-9781-PF; Ahddub 200909996 ion beam 47. Scanning the corrected defect region, and detecting the position of the corrected defect region by detecting the action of the secondary ion detecting plasma 48 generated at this time. The ion beam 47 is irradiated to the defective region where the gray scale mask 2 is modified by the electromagnetic optical system 42' to perform the correction film formation or the removal of the semi-transmissive film in the black matrix region. Further, the beam diameter of the ion beam is 0 · 1 // in 0 or less. In the state in which the correction film is formed, the electromagnetic field 42 is released to release the cesium gas by the gas smashing 44 from the c: bundle 47' and the same. Thereby, the gas is contacted with the ion beam 47 to carry out polymerization (chemical reaction), and a correction film is deposited in the irradiation region of the ion beam 47 to form a film. Further, in the state where the semi-transmissive film is removed, the stone gas is released by using the gas for the surname of the gas, and in this state, the ion beam 47 is irradiated through the electromagnetic optical system 42 to remove the semi-transparent film. . (5) using the removed region 53 (Fig. 2(b)) as a film for the correction film, and inputting the required position information and the like to the m device, and simultaneously inputting the film forming conditions of the L person. By the film formation conditions, the carbon correction film 27 is formed in the film formation region (the region 53 described above) (see Fig. 2(c)). Then, the transfer to the transfer target 3 () is performed on the transfer target 30 by using a gray scale mask which is modified by the defect as described in the above embodiment (refer to transfer of FIG. D) In a region corresponding to the light shielding portion 21 of the photomask, a thick film resist film thickness portion is formed, and a resist film thickness portion of the film is formed in a region corresponding to the region 53 where the correction film 27 is formed, corresponding to The light-transmitting portion is either square or formed to form a film-free resist pattern Μ (Fig. 2(d)). Further, it is not shown in Fig. 2, but even without defects and without 2130-9781-PF/Ahddub 23 200909996 The correcting seat is formed when the semi-transmissive portion existing in another portion is formed, and the film thickness portion of the film is formed. If the defect is corrected by the embodiment of the above-mentioned embodiment, the knot is corrected. The entire semi-transmissive portion produced by the defective portion is formed in a single positive film. Therefore, when the pattern is transferred onto the transfer target, the position is poor. On the resist of the area of the first part, the user of the invisible agent covers the resistance formed on the transferred body. Wei... The mouth is a small flaw in the conventional resist to form a sound of suspected defects. ^ ^ 4 ^ , ~, Bu occurs, this is enough to properly correct the defects in the + light transmission part. The above-mentioned Ρ 除去 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ Ρ + The whole of the light-transmissive film, therefore, the palatable mouth becomes a relatively small semi-transparent portion of the channel-plus-L positive method. For example, the butyl butyl group, the lanthanide system is generally suitable for the condition, which is suitable for the present invention. When it becomes an area of more than 50", it is necessary to use the iF day for the η main ΙΒ device to form a film, and to create a combination of the boundary and the position of the film-forming operation, which requires additional consideration. In addition, the above-mentioned gray-scale material is used for the bungee and the channel portion f. The source of the film-forming electrode is used for the source, the port, and the port. In the state of the use of the sea, the present invention The defects caused by the correction, due to, ', and The reticle is also used for the manufacture of small holes. It is also the ideal pattern size for the purpose of the second: the defect caused by the diameter layer or the bright,::= 2l3〇-9781-PF; Ahddub 24 200909996 - becomes a rectangle Therefore, it is convenient to control, for example, the film formation conditions by the FIB apparatus. For example, in the first embodiment, the film forming apparatus as the correction film is a fib device, but the film forming device is used. It is not limited to the FIB device. For example, other film forming apparatuses such as laser CVD may be applied. The present invention also provides a gray scale mask including a defect correction process by the defect correction method described above. Production method. The gray scale mask described above can be served by, for example, the following methods 1 to 3. The present invention is a modification of the defect of the semi-transmissive film produced in the semi-transmissive portion by the following manufacturing process. 1. Hunting a mask blank pattern on a transparent blank substrate in which a semi-transparent film and a light-shielding film are laminated in this order to form a resist pattern corresponding to a region of the light-shielding portion, Using the resist pattern as a mask? The light-shielding film is formed, and a light-shielding portion is formed on the semi-transmissive film. A semi-transmissive film is formed by forming a resist pattern in at least a region containing at least a semi-transmissive portion, and using a pattern of the agent as a mask to form a semi-transmissive film and a light-transmitting portion. A gray scale mask in which a semi-transmissive portion caused by a semi-transmissive film and a light-shielding portion and a light-transmitting portion which are formed by a condensed film of a light-shielding film and a semi-transmissive film are formed on the transparent substrate can be obtained in this manner. . 2. A mask blank corresponding to a region of the light-shielding portion is formed on the mask blank blank sheet by preparing a mask blank blank sheet on the transparent substrate, and the resist pattern is used as a mask The money is exposed to the light-shielding film to form a light-shielding film pattern. Then, after the resist pattern is removed, a semi-transmissive film is formed on the positive side of the substrate. Then, by forming a resist pattern in the region corresponding to the light-shielding portion and the half 2130-978l-pF; Ahddub 25 200909996, ^ ^ @ uses the resist pattern as a mask, and the surname is half of the salt. The light-transmissive film is formed to form a light-shielding portion and a semi-light-transmitting portion. In this way, a white light ray formed on the transparent substrate, a semi-transparent π caused by the light-transmissive film, and a gray-scale reticle through the light-shielding film and the semi-transparent 透光 light-transmitting portion are obtained. a light-shielding portion caused by the laminated film, 3. by forming a resisting film corresponding to the light-shielding portion and the light-transmitting portion on the blank blank blank of the same mask as the above 2, The agent pattern is used as a cover, and the exposed concealing cavity is etched. ^ ^ The film is exposed to expose the area corresponding to the semi-transmissive portion. After the resist pattern is removed, the surface of the substrate is formed. The light film 'in the region corresponding to the light shielding portion and the semi-light transmitting portion forms a resist pattern 'with the resist pattern as a mask, the semi-transmissive film (and the semi-transmissive film and the light shielding film) which are exposed by the surname, and A light transmitting portion, a light blocking portion, and a semi-light transmitting portion are formed. Of course, the method of manufacturing the gray scale mask of the present invention is not limited to the methods of the above 1 to 3. According to the manufacturing method of the gray scale mask of the present invention, it is possible to obtain a gray scale mask which appropriately corrects the defect occurring in the semi-transmissive portion by the defect correction process having the defect correction method of the present invention. . [Second Embodiment] Fig. 4 is a plan view showing a second embodiment of a defect correction method by the present invention in accordance with a process sequence. In the second embodiment, a semi-transmissive film 26 (permeation 曝光 5 〇 % of exposure light) containing indium quaternary compound and a light-shielding film 25 containing chromium as a main component are formed on the transparent substrate 24 . A gray scale mask for manufacturing a TFT substrate having a light-shielding portion 2 (light-shielding portion (1), 26 2130-9781-PF; Ahddub 200909996 21b), a light-transmitting portion 22, and a semi-light-transmitting portion 23 is provided for a predetermined patterning. However, in the second embodiment, as shown in FIG. 4(a), as an example of the resist pattern, each of the patterns is surrounded by the two light shielding portions 21a and 21b and the light transmitting portion 22 to surround the semi-transmissive portion. The shape of the 23 area. In addition, the manufacturing method is as described above. The defect correction method resulting from the semi-transmissive portion 23 of the gray scale mask described above. (1) For the manufactured gray scale mask, the defect inspection device is used to perform defect inspection of the mask pattern. As a result of the inspection of the defect, the white defect portion 51 and the black defect portion 52 are present as shown in Fig. 4 (4) in the portion of the plurality of semi-transmissive portions 23 composed of the semi-transmissive film on the photomask. 2l30-9781-PF; Ahddub (4) In order to consider the wavelength characteristics of the exposure machine when using the reticle, at a given wavelength of 27 200909996, the light transmittance of the MoSi semi-transparent film and the carbon correction film is - Therefore, the film thickness of the carbon correction film and the film formation conditions (doping amount per unit area, etc.) for forming the film are determined. (5) The region 54 to be removed is used as a film formation region of the correction film, and the required position information and the like are 'wheeled into the FIB device, and the film formation conditions are input, and the film formation conditions are used to form a film formation region. (Region 54), a carbon correction film 27 is formed (Fig. 4(c)). Then, when the transfer by the second embodiment according to the second embodiment (the modified gray scale mask is performed until the transfer target is grasped with reference to FIG. 1), the transfer target 3G is used. The film thickness portion 33b of the film is formed in the light-shielding portion 对应 corresponding to the mask, and the film thickness portion 33a of the thick film is formed in the region corresponding to the region 54 where the correction is formed. In the region of the light transmitting portion, a film-free resist pattern 33 is formed (Fig. 4 (4) is not shown in Fig. 4, 徊B bn C疋, even if there is no defect and no correction is made in the film existing in other portions. The thick part. + The area of the first #, also the film formed by the above-mentioned defects, the result of the above defects; the defect caused by the = (four) state is corrected to form a semi-transmissive portion of the modified film core As a whole, at the time of transfer, there is no difference in the pattern corresponding to the cup: film line to the object to be transferred. Defects of the resist pattern on the resist body in the region of the semi-transmissive portion of t The mask user is formed to be formed by being transferred to form a slight difference in the detection: the cause = on the conventional resist The correction occurs in the semi-transmissive portion: the lack of thinking occurs, and can be adapted to 2130-9781-PF; Ahddub 28 200909996 [Third embodiment] FIG. 5 shows the defect correction caused by the present invention in sequence according to the process. A plan view of a third embodiment of the method. Even in the third embodiment, a semi-transmissive film 26 containing a molybdenum telluride (a transmittance of 50% for exposure light) is formed on the transparent substrate 24 and The light-shielding film 25 which is a main component is a gray scale mask for manufacturing a TFT substrate which is provided with a light-shielding portion 21 (light-shielding portions 2ia and 21b), a light-transmitting portion 22, and a semi-light-transmitting portion 23 by a predetermined patterning. In the third embodiment, as shown in FIG. 5(a), as an example of the resist pattern, each of the patterns is surrounded by the two light-shielding portions 21a' to 21b and the light-transmitting portion 22 to surround the semi-transmissive portion 23. Further, the manufacturing method is as described above. The defect correction method resulting from the semi-transmissive portion 23 of the gray scale mask described above is explained. (1) In the case of the manufactured gray scale mask, the defect inspection device is used. And perform defect inspection of the mask pattern. As a result, in one of the plurality of semi-transmissive portions 23 composed of the semi-transmissive film 26 on the photomask, as shown in Fig. 5(a), there are white defect portions 51 and black defect portions 52. (2) Then, in the state of the third embodiment, the semi-transmissive film 26 and the light-shielding film 25 (here, the light-shielding portion) are present in the rectangular region including the semi-transmissive portion 23 generated by the defective portion 5 52. The semi-transparent film (4) 26 and the light-shielding film 25 are removed, respectively, for example, using the aforementioned FIB device (preferably gas-assisted etching of the FiB device). As a result, the removal includes the aforementioned defects 51, 52. The semi-transmissive portion 2130-9781-PF; Ahddub 29 200909996 23 is a semi-transparent region in a rectangular region (here, a region surrounded by a light-shielding portion and a light-transmitting portion u and a cover: a wide residual portion) The light film % and the shading = Γ 25 - part 'in the removed area (four), expose the transparent substrate 24 (Fig. 5 (b)). Then, in the previously removed region, semi-transparency / 2 is initially formed. Therefore, the film forming apparatus and film forming material (synthesis) are determined. For example, in the first embodiment of the IS, the Πβ skirting is applied, and the film forming apparatus is used as a film forming material to form carbon. (4) In order to consider the wavelength characteristics of the exposure machine when the mask is used, the light transmittance of the M〇Si semi-transmissive film and the carbon correction film is determined to be 'determined' at the predetermined wavelength, thereby determining the film thickness of the carbon correction film. And film forming conditions (doping amount per unit area, etc.) for film formation. (5) The region τ _ ^• 除去 removed as the correction film is used as the film formation region of the correction film, and the position information and the like are input to the FIB device, and the film formation conditions described above are input, and the film formation conditions are caused by the film formation conditions. The film formation region (region (6) forms a carbon correction film 27 (Fig. 5(c)). ' (8) Next, in the same region as the portion of the above-mentioned removed light-shielding portion, the shading is formed by the FIB skirting. The correction film Μ (Fig. 5 (d)). In this state, the material of the correction film 28 may not necessarily be phase; in the light shielding film 25, a film system using the light-shielding 臈 25 and containing chromium as a main component is suitable for In the third embodiment, it is also suitable for the light-shielding correction film 28 in the third embodiment. The defect is corrected by the third embodiment as described above. The gray scale reticle is carried out to the transfer target 3G (refer to transfer transfer 2130-9781-PF of FIG. n; Ahddub 30 200909996, on the transfer target 30, in the region corresponding to the reticle, forming PCT Sight + 』 especially 4 21 a, 21 b area 55 (, yes, except for points, corresponding to the formation of the correction film 27 In the area, touch == the area of the repair...", the thick knife, in the area corresponding to the light-transmitting portion, / into the film-free resist pattern. In addition, even if there is no defect and no correction is made, The region of the first portion is also formed into a thin film portion. The core is:: The defect caused by the third embodiment described above is corrected to the entire semi-transmissive portion of the defect portion described in February. Since the film 27 is corrected as soon as possible, when the transfer onto the transfer target is carried out, no retardation is formed on the resist corresponding to the region of the semi-transmissive portion forming the correction film. When the mask user performs the defect inspection of the resist pattern formed on the transfer target, the accident is not detected due to the formation of a slight difference in the conventional resist, and the correction can be appropriately corrected. In addition, in the third embodiment, the film including the rectangular region of the defective blade can be removed, and the correction film can be formed in the removed rectangular region. The corrected area is certain, for example easy The advantages of film forming conditions and the like of the fib device are controlled. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask of the present invention. Fig. 2 (a) to Fig. 2 (d A plan view showing a second embodiment of the defect correction method by the present invention in order of the process. 31 2130-9781-PF/Ahddub 200909996 Fig. 3 is a schematic side view showing the configuration of the FIB device. 4(d) is a plan view showing a second embodiment of the defect correction method by the present invention in order of the process. Fig. 5(a) to Fig. 5(d) are sequentially displayed in accordance with the process of the present invention. A plan view of a third embodiment of the defect correction method. Fig. 6 (a) to Fig. 6 (c) are schematic cross-sectional views showing a manufacturing process of a TFT substrate using a gray scale mask. 7(a) to 7(c) are schematic cross-sectional views showing a manufacturing process subsequent to the manufacturing process of Fig. 6. Fig. 8 is a plan view showing an example of a conventional gray scale mask in the form of a fine pattern. Fig. 9(a) to Fig. 9(d) are plan views showing the conventional defect correction method in order of the process. Fig. 1 〇 (a) to Fig. 1 〇 (d) are plan views showing other examples of conventional missing correction methods in accordance with the process sequence. [Main component symbol description] 2~gate electrode; 4~1st semiconductor film; 1~glass substrate; 3~gate insulating film; 6~ source/drain metal 6b, -source/and pole: , 7 a ~ 1st resist pattern; 1 〇 ~ gray scale mask; 11a ~ light shielding portion; 5 ~ second semiconductor film; G a ~ source / drain; 7 ~ positive photoresist 7; 7b ~ 2 Resistor pattern 11 to light shielding portion; 2130-9781-PF; Ahddub 32 200909996 11 b~ light shielding portion; 1 2 to light transmitting portion; 13 to semi-light transmitting portion; 13a to light shielding pattern; 13b' to light transmitting portion; ~ Grayscale mask; 21~ shading section; 21 a~ shading section; 21b, ~ shading section; 22~ transmissive section; 23~ semi-transmissive section; 2 4~ transparent substrate; 25~ shading film; Light transmissive film; 2 7~correcting film; 28~correcting film; 30~ being transferred; 31~substrate; 32A~ film; 32B~ film; 33~ resist pattern; 33a~ thick film resist film thickness part 34~ resist pattern; 33b~ film resist film thickness portion 34c~ portion; 34a~ thick film thickness portion; 34d~ portion; 34b~ film thickness portion 35~ resist pattern; 35a~ thick film thickness portion; 35c~ portion; 35b~ film thickness portion; 35d~ portion; 41~ ion source; 42~ electromagnetic optical system; 43~ electron gun; 44~ gas Grab; 45~XY pedestal; 4 6~ scan amplifier; 47~ ion beam; 4 8~ secondary ion detector, 4 9~ locust engraved with gas grab; 51~ white defect part; 52~ black defect part; ~ Area, 5 4~ area; 55~ area, 5 6~ white defects. 2130-9781-PF; Ahddub 33