CN104746041B - The method that laser Gaseous depositional mode repairs white defect - Google Patents
The method that laser Gaseous depositional mode repairs white defect Download PDFInfo
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- CN104746041B CN104746041B CN201510097968.5A CN201510097968A CN104746041B CN 104746041 B CN104746041 B CN 104746041B CN 201510097968 A CN201510097968 A CN 201510097968A CN 104746041 B CN104746041 B CN 104746041B
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Abstract
The invention discloses a kind of method that laser Gaseous depositional mode repairs white defect, including：In one jiao of setting repairing starting point close to the white defect, terminal is repaired in the diagonal setting of the repairing starting point close to the white defect, so that in the white defect institute in the plane, for scanning repairing area, the white defect is fully located at described scan in repairing area in the region that straight line, the straight line that extends longitudinally of repairing terminal that straight line, the repairing terminal that the straight line that is extended transversely using the repairing starting point, the repairing starting point extend longitudinally extend transversely surround；Repaired using laser Gaseous depositional mode in the scanning repairing area from the repairing origin scans to the repairing terminal, make the white blemish surface that repairing film be completely covered and complete the repairing.The method that the laser Gaseous depositional mode of the embodiment of the present invention repairs white defect, by way of scanning and repairing, large-sized white defect can be repaired.
Description
Technical field
The invention belongs to the white defect mending technical field of photovoltaic industry, and in particular to a kind of laser Gaseous depositional mode is repaiied
The method of filler defect.
Background technology
Laser Gaseous deposition technique is widely used in the white defect mending of the photovoltaic industries such as chromium plate, and technology is step monochromatic lights at present
Spot laser Gaseous deposition technique, there is higher requirement to the uniformity of laser energy in the range of slit slit, therefore be not suitable for
The white defect mending of large-size, and it repairs blackness and adhesion slightly has deficiency, it is difficult to meet the system of high standards product
It is required.
The content of the invention
A kind of above-mentioned deficiency for aiming to overcome that prior art of the embodiment of the present invention, there is provided laser Gaseous depositional mode
The method for repairing white defect, large-sized white defect can be repaired.
In order to realize foregoing invention purpose, the technical scheme of the embodiment of the present invention is as follows：
A kind of method that laser Gaseous depositional mode repairs white defect, including：
Starting point is repaired in one jiao of setting close to the white defect, in pair of the repairing starting point close to the white defect
Angle sets repairing terminal so that in the white defect institute in the plane, the straight line that is extended transversely with the repairing starting point, described
Straight line, the repairing terminal that straight line, the repairing terminal that starting point extends longitudinally extend transversely is repaired to extend longitudinally
The region that surrounds of straight line be scanning repairing area, the white defect is fully located in the scanning repairing area；
Repaired using laser Gaseous depositional mode in the scanning repairing area from the repairing origin scans to described
Terminal is repaired, makes the white blemish surface that repairing film be completely covered and completes the repairing.
The method that the laser Gaseous depositional mode of the embodiment of the present invention repairs white defect, by way of scanning and repairing, phase
For single-spot repair mode in the prior art (point is repaired), large-sized white defect can be repaired.
Brief description of the drawings
Fig. 1 is the flow chart that the laser Gaseous depositional mode of the embodiment of the present invention repairs the method for white defect；
Fig. 2 is the schematic diagram of the white defect before the repairing of the embodiment of the present invention 1；
Fig. 3 is the schematic diagram using the white defect after the repairing of laser Gaseous depositional mode of the embodiment of the present invention 1.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The embodiments of the invention provide a kind of method that laser Gaseous depositional mode repairs white defect.The restorative procedure passes through
Laser Gaseous deposition technique makes scanning repair gas aggradation to the completion repairing of white fault location.This method be applied to using glass as
The repairing of the white defect of metal level is coated with the surface of substrate.The method that laser Gaseous depositional mode repairs white defect relies on load
Installed respectively on plate platform and supply exhaust system and laser light path system for the steam of vapour deposition, in laser light path system
The steam of compound plate to be repaired, the white defect steam being adhered on compound plate to be repaired are blowed at LCVD heads by laser irradiation LCVD heads
Place.
As shown in figure 1, the flow chart of the method for the white defect of laser Gaseous depositional mode repairing of the embodiment of the present invention.Should
Method specifically includes the steps：
Step S01：In one jiao of setting repairing starting point close to white defect, diagonal in the repairing starting point close to white defect sets
Put repairing terminal so that in white defect institute in the plane, prolong to repair straight line, repairing starting point that starting point extends transversely along longitudinal direction
Repaiied for scanning in the region that the straight line that straight line, the repairing terminal that straight line, the repairing terminal stretched extend transversely extend longitudinally surrounds
Region is mended, white defect is fully located in the scanning repairing area.
Wherein, the distance for side of the straight line away from white defect adjacent thereto that repairing starting point extends longitudinally is 10~20 μ
M, the distance for side of the straight line away from white defect adjacent thereto that repairing starting point extends transversely is 5~10 μm；Repair terminal edge
The distance of side of the straight line of Longitudinal extending away from white defect adjacent thereto is 10~20 μm, and repairing terminal extends transversely straight
The distance of the side of line-spacing white defect adjacent thereto is 5~10 μm.It is above-mentioned " side away from white defect adjacent thereto away from
From " the distance between " side and straight line more immediate with straight line " is referred specifically to here.
Above-mentioned repairing starting point, repairing terminal and the setting for scanning repairing area so that repairing film can be completely covered white
Defect, repairing will not be made to produce the white defect omitted；Simultaneously as the non-white defect area of covering repairing film is smaller, will not
Its normal function is influenceed, will not also cause the waste of material.
Step S02：Repaired using laser Gaseous depositional mode in scanning repairing area from repairing origin scans to repairing
Terminal, make white blemish surface that repairing film be completely covered and complete repairing.
With regard to carrying out taking out waste gas simultaneously since scanning, the process for taking out waste gas includes taking away and heating waste gas is easy to waste gas
Discharge.The flow for taking waste gas away is 16~20L/min.Specific heating-up temperature can specifically determine according to the composition of waste gas.Example
Such as, when waste gas is chromium steam, the temperature for heating waste gas is 300 DEG C.During being deposited in laser Gaseous, unavoidably
There is unnecessary repairing gas aggradation to cause the white defect flatness after repairing low to white blemish surface, therefore, it is necessary to repaiied in scanning
Take unnecessary repairing gas while benefit away.
Step S02 detailed process includes：
Step S021A：Repairing is transversely scanned to the opposite side of scanning repairing area from repairing starting point, in the region of process
Surface covering thin film.
Step S022A：Moved longitudinally a line from repairing starting point, transversely scan repairing from the side of scanning repairing area
To the opposite side of scanning repairing area, thin film is covered on the surface in the region of process.
Step S023A：Repeat step S022A is until scanning repairing to repairing terminal.
It should be appreciated that above-mentioned scanning repairing method can also be the detailed process along longitudinal repairing, then step S02
Including：
Step S021B：Repaired from repairing starting point along longitudinal scanning to the opposite side of scanning repairing area, in the region of process
Surface covering thin film.
Step S022B：A row are laterally moved from repairing starting point, repairing is scanned along longitudinal direction from the side of scanning repairing area
To the opposite side of scanning repairing area, thin film is covered on the surface in the region of process.
Step S023B：Repeat step S022B is until scanning repairing to repairing terminal.
Above-mentioned scanning repairing method returns to of the scanning repairing of the row or column after every scanning a line or a row
Point, move again to next row or column and continue to scan on, not by the way of shuttle-scanning back and forth.Technical scheme is swept
The move mode for retouching repairing make it that the process that scanning is repaired is easily controllable.Due to scan repair during be also accompanied by take out it is useless
The process of gas, the direction for taking out waste gas are fixed, therefore, can be made the process that scanning is repaired using above-mentioned moving direction and be taken out
The process of waste gas will not influence each other, so as to not interfere with the process of scanning repairing.
When specifically, using transversal scanning mode, the size of the overlapping region along longitudinal direction of adjacent rows repairing film is 2
~4 μm, preferably 3 μm；During using longitudinal scanning mode, the size of the overlapping region transversely of adjacent two row repairing film is
2~4 μm, preferably 3 μm.The setting of the parameter, which to scan in mending course, will not omit any white defect area, simultaneously
The size of overlapping region is smaller, will not cause the waste of material.
Specifically, the speed for scanning repairing is 7~11 μm/s.The speed of scanning repairing ensure that suitable repairing area
Energy, too fast repairing speed can because repairing area energy it is too low cause adhesion it is bad and owe repairing, excessively slow repairing
Speed can then cause repairing point crackle and raised the problems such as tilting because repairing area energy is too high.During scanning repairing
Laser power is 1.8~2.2mw, and laser power crosses conference causes repairing point crackle and projection because repairing area energy is too high
The problems such as tilting, laser power is too small to be caused adhesion bad because repairing area energy is too low and owe repairing.Current-carrying gas
Pressure be 0.15~0.20mPa, flow-rate ratio 40-60%.Current-carrying gas plays a part of protection and current-carrying.The current-carrying gas
Preferably Ar gas.The definition of the flow-rate ratio of the current-carrying gas is circulating ratio when current-carrying gas passes through pipeline, passes through magnetic valve
It is controlled and monitors with flowmeter.The flow-rate ratio of the current-carrying gas ensure that the flow of the gas of scanning repairing and scanning are repaired
Gas feed consistency, too low current-carrying gas flow can cause scanning repair gas concentration deficiency finally cause deposition
Scanning repairing gas thickness deficiency, bad to show as owing repairing or blackness deficiency, too high current-carrying gas flow then can
Cause laser deposition reaction not exclusively because of the excessive concentration of the gas of scanning repairing and repairing thickness is too high, eventually cause clear
The problems such as elution falls., it is necessary to which the gas that the scanning for vapour deposition is repaired heats during scanning repairing, specific heating-up temperature
Can specifically it be determined according to scanning repairing gas.For example, when required scanning repairing gas is chromium steam, pass through heating evaporation
Cr(OH)6, chromium steam is formed, the temperature of heating evaporation is 35~45 DEG C.
Specifically, the irradiation area of laser is long 18~24 μm, the region in wide 6~9 μm of region, preferably 20 × 6 μm.
The laser range of exposures is realized by using the slit of the size.Relative to single-spot repair mode in the prior art, (point is repaiied
It is multiple), the range of exposures of the laser is smaller, therefore the requirement to the energy uniformity of laser reduces, and makes the technical side of the present invention
Case has more preferable technology stability and adaptability.Meanwhile the repairing unit plane of technical scheme and prior art
The time of laser irradiation approaches during product, but the laser energy in the range of making because the slit sizes of the technical program are smaller is more
Uniformly, can guarantee that more stable repairing quality, thus the adhesion overall when doing the white defect mending of large scale and blackness than
Prior art is more stable, shows more excellent in blackness and adhesion test, is also not easy local shedding occur and light leak shows
As.
For the technical scheme of the embodiment of the present invention particularly suitable for large-sized white defect, the white defect can be diameter 1000
Round spot within μm, or the other shapes of similar sizes.
Below with specific embodiment, the laser Gaseous depositional mode of the embodiment of the present invention is repaired white defect method do into
The explanation of one step.
Embodiment 1 repairs few chromium defect on chromium plate
Few chromium defect on the chromium plate is the round spot of about 30 μm of diameter.Repaired using the laser Gaseous depositional mode of the present invention
The method of white defect is repaired to the defect.Wherein, current-carrying gas is Ar gas, and scanning repairing gas is Cr gas.Specifically repair
Multiple parameter is as shown in table 1.As shown in Fig. 2 it is the schematic diagram of the white defect before the repairing of the embodiment of the present invention 1, wherein figure (a) is
Schematic diagram is reflected, figure (b) is transmission schematic diagram.As shown in figure 3, the use laser Gaseous depositional mode for the embodiment of the present invention 1
The schematic diagram of white defect after repairing, wherein figure (a) is reflection schematic diagram, figure (b) is transmission schematic diagram.From Fig. 1 and Fig. 2 pair
It is better than the effect that the method that can be seen that by the present invention is repaired.
The laser Gaseous deposition of the embodiment 1 of table 1 repairs the technological parameter of white defect
| Parameter | Value |
| The pressure of Ar gas | 0.15mpa |
| Ar flow-rate ratios | 40% |
| The temperature of Cr heating evaporations | 35℃ |
| Take the flow of waste gas away | 16L/min |
| Aspiration pump | It is normally opened |
| Heat the temperature of waste gas | 300℃ |
| The range of exposures (slit sizes) of laser | 20×6μm |
| Repair the size of the overlapping region of film | 3μm |
| Laser power | 18mw |
| Scan the speed of repairing | 7μm/s |
| Repair starting point | 10 μm away from defect left side, 5 μm of top |
| Repair terminal | 10 μm away from defect right side, 5 μm of lower section |
| Scanning repairing direction | Laterally |
Embodiment 2 repairs few tungsten defect on tungsten plate
Few tungsten defect on the tungsten plate is the round spot of about 100 μm of diameter.Repaiied using the laser Gaseous depositional mode of the present invention
The method of filler defect is repaired to the defect.Wherein, current-carrying gas is Ar gas, and scanning repairing gas is W gas.Specifically repair
Multiple parameter is as shown in table 2.The effect and embodiment 1 of embodiment 2 are identical, and it is good by the effect of method repairing of the invention to show.
The laser Gaseous deposition of the embodiment 2 of table 2 repairs the technological parameter of white defect
| Parameter | Value |
| The pressure of Ar gas | 0.20mpa |
| Ar flow-rate ratios | 60% |
| The temperature of W heating evaporations | 51℃ |
| Take the flow of waste gas away | 20L/min |
| Aspiration pump | It is normally opened |
| Heat the temperature of waste gas | 307℃ |
| The range of exposures (slit sizes) of laser | 18×8μm |
| Repair the size of the overlapping region of film | 2μm |
| Laser power | 2.2mw |
| Scan the speed of repairing | 11μm/s |
| Repair starting point | 10 μm away from defect left side, 10 μm of top |
| Repair terminal | 10 μm away from defect right side, 10 μm of lower section |
| Scanning repairing direction | Longitudinal direction |
Embodiment 3 repairs few chromium defect on chromium plate
Few chromium defect on the chromium plate is the round spot of about 1000 μm of diameter.Repaiied using the laser Gaseous depositional mode of the present invention
The method of filler defect is repaired to the defect.Wherein, current-carrying gas is Ar gas, and scanning repairing gas is Cr gas.Specifically
It is as shown in table 3 to repair parameter.The effect and embodiment 1 of embodiment 3 are identical, show the effect repaired by the method for the present invention
It is good.
The laser Gaseous deposition of the embodiment 3 of table 3 repairs the technological parameter of white defect
| Parameter | Value |
| The pressure of Ar gas | 0.18mpa |
| Ar flow-rate ratios | 50% |
| The temperature of Cr heating evaporations | 45℃ |
| Take the flow of waste gas away | 18L/min |
| Aspiration pump | It is normally opened |
| Heat the temperature of waste gas | 300℃ |
| The range of exposures (slit sizes) of laser | 24×9μm |
| Repair the size of the overlapping region of film | 4μm |
| Laser power | 2.0mw |
| Scan the speed of repairing | 9μm/s |
| Repair starting point | 15 μm away from defect left side, 8 μm of top |
| Repair terminal | 15 μm away from defect right side, 8 μm of lower section |
| Scanning repairing direction | Laterally |
The method that white defect is repaired by the laser Gaseous depositional mode of the embodiment of the present invention, by the side for scanning repairing
Formula, relative to single-spot repair mode in the prior art (point is repaired), large-sized white defect can be repaired, and had preferable
Blackness and adhesion, also it is not easy local shedding and light leakage phenomena occur.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., all should be included within protection scope of the present invention.
Claims (8)
1. a kind of method that laser Gaseous depositional mode repairs white defect, it is characterised in that including：
In one jiao of setting repairing starting point close to the white defect, set in the diagonal of the repairing starting point close to the white defect
Put repairing terminal so that in the white defect institute in the plane, straight line, the repairing that starting point extends transversely are repaired with described
Straight line that straight line that starting point extends longitudinally, the repairing terminal extend transversely, the repairing terminal extend longitudinally straight
The region that line surrounds is scanning repairing area, and the white defect is fully located in the scanning repairing area；
Repaired using laser Gaseous depositional mode in the scanning repairing area from the repairing origin scans to the repairing
Terminal, make the white blemish surface that repairing film be completely covered and complete the repairing；
The speed of the scanning repairing is 7~11 μm/s, and laser power is 1.8~2.2mw during the scanning repairing；Institute
The pressure for the current-carrying gas that scanning repairing uses is stated as 0.15~0.20mPa, flow-rate ratio 40-60%.
2. the method that laser Gaseous depositional mode as claimed in claim 1 repairs white defect, it is characterised in that described using sharp
Vapor deposition mode is repaired to the process of the repairing terminal in the scanning repairing area from the repairing origin scans
Including：
Repairing is transversely scanned to the opposite side of the scanning repairing area from the repairing starting point, on the surface in the region of process
Cover one layer of repairing film；
Moved longitudinally a line from the repairing starting point, transversely from the side scanning repairing of the scanning repairing area to described
The opposite side of repairing area is scanned, one layer of repairing film is covered on the surface in the region of process, repeats the step until sweeping
Retouch repairing and arrive the repairing terminal.
3. the method that laser Gaseous depositional mode as claimed in claim 2 repairs white defect, it is characterised in that：Adjacent rows institute
The size for stating the overlapping region along longitudinal direction of repairing film is 2~4 μm.
4. the method that laser Gaseous depositional mode as claimed in claim 1 repairs white defect, it is characterised in that described using sharp
Vapor deposition mode is repaired to the process of the repairing terminal in the scanning repairing area from the repairing origin scans
Including：
Repaired from the repairing starting point along longitudinal scanning to the opposite side of the scanning repairing area, on the surface in the region of process
Cover one layer of repairing film；
A row are laterally moved from the repairing starting point, are repaired along the side scanning of longitudinal direction from the scanning repairing area to described
The opposite side of repairing area is scanned, one layer of repairing film is covered on the surface in the region of process, repeats the step until sweeping
Retouch repairing and arrive the repairing terminal.
5. the method that laser Gaseous depositional mode as claimed in claim 4 repairs white defect, it is characterised in that：Adjacent two row institute
The size for stating the overlapping region transversely of repairing film is 2~4 μm.
6. the method that laser Gaseous depositional mode as claimed in claim 1 repairs white defect, it is characterised in that：It is described to repair
The distance of side of the straight line that point extends longitudinally away from the white defect adjacent thereto is 10~20 μm, the repairing starting point edge
The distance of side of the straight line extended laterally away from the white defect adjacent thereto is 5~10 μm；The repairing terminal edge longitudinal direction
The distance of side of the straight line of extension away from the white defect adjacent thereto is 10~20 μm, and the repairing terminal extends transversely
The distance of side of the straight line away from the adjacent thereto white defect be 5~10 μm.
7. the method that laser Gaseous depositional mode as claimed in claim 1 repairs white defect, it is characterised in that：The irradiation of laser
Region is long 18~24 μm, wide 6~9 μm of region.
8. the method that the laser Gaseous depositional mode as described in any one of claim 1~7 repairs white defect, it is characterised in that：
The process of the scanning repairing is also accompanied by the process for taking out waste gas, and the process for taking out waste gas includes taking away and heating the waste gas
Discharge the waste gas, the flow for taking the waste gas away is 16~20L/min.
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| CN201510097968.5A CN104746041B (en) | 2015-03-04 | 2015-03-04 | The method that laser Gaseous depositional mode repairs white defect |
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| CN201510097968.5A CN104746041B (en) | 2015-03-04 | 2015-03-04 | The method that laser Gaseous depositional mode repairs white defect |
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| JP3479838B2 (en) * | 2000-10-19 | 2003-12-15 | 日本電気株式会社 | Pattern correction method and pattern correction device |
| CN1258118C (en) * | 2002-03-28 | 2006-05-31 | Hoya株式会社 | Method for correcting defect of grey part in grey mask |
| JP5102912B2 (en) * | 2007-03-31 | 2012-12-19 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method, gray-tone mask manufacturing method, and pattern transfer method |
| JP5057866B2 (en) * | 2007-07-03 | 2012-10-24 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method, gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method |
| JP5163967B2 (en) * | 2010-07-30 | 2013-03-13 | オムロン株式会社 | Photomask correction method and laser processing apparatus |
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