200907595 九、發明說明 【發明所屬之技術領域】 本發明係關於用以在TAB (Tape Automated Bonding )或FPC ( Flexible Printed Circuit)之長形帶狀工件形成 圖案之曝光裝置及該曝光裝置中之焦距調整方法。 【先前技術】 在液晶等顯示面板、行動電話、數位攝影機、1C卡等 中，係採用將積體電路安裝在厚度25 μιη〜125 μπι左右之 聚酯或聚醯亞胺等樹脂薄膜上的薄膜電路基板。薄膜電路 基板在其製造步驟中，係例如寬160mm、厚1〇〇 μηι、長數 百m的帶狀工件，一般係捲繞在捲軸。 此外，薄膜電路基板係將導電體（例如銅箔）黏貼在 上述樹脂薄膜上。薄膜電路基板的製造係將塗布阻劑的步 驟、轉印所希望電路圖案的曝光步驟、阻劑的顯影步驟、 去除不需要之導電體的蝕刻步驟等反覆例如4次至5次來 進行。在各步驟中，薄膜電路基板由捲軸被捲出，經處理 加工，而再次捲繞在捲軸。以下將薄膜電路基板稱爲帶狀 工件。 一面搬送上述帶狀工件，一面將電路圖案轉印在各曝 光區域的曝光裝置係已揭示於例如專利文獻1等中。 在第5圖顯示帶狀工件之曝光裝置之構成之一例。 帶狀工件W (以下亦僅稱爲工件w)係與用以保護工 件W的間隔件（spacer )疊合而以滾筒狀捲繞在捲出滾筒 -4- 200907595 1。當由捲出滾筒1拉出時’間隔件係被捲繞在間隔件捲 繞滾筒la。 由捲出滾筒1捲出的帶狀工件W係經由鬆緩部A 1、 中間導引滾筒R2，而藉由編碼器滾筒R3與按壓滾筒r3 ’ 予以夾持。編碼器滾筒R3係用以確認在搬送工件時，在 後述之搬送滾筒中是否發生滑動的滾筒。 由捲出滾筒1被拉出的帶狀工件W係經由曝光部3， 而藉由搬送滾筒R4與按壓滾筒R4,予以夾持。工件w係 被搬送藉由搬送滾筒R4的旋轉所設定的預定量，而被送 至曝光部3的工件載台1 〇上。 在曝光部3上設有：由燈4a與聚光鏡4b所構成的光 照射部4;具有曝光在工件之圖案（遮罩圖案）的遮罩μ ;及投影透鏡5。此外，工件載台1 〇係安裝在工件載台驅 動機構6上’可以上下、左右方向驅動，並且可以垂直於 工件載台面的軸爲中心進行旋轉。 在曝光部3係藉由真空吸附等保持手段，將帶狀工件 w之受到曝光之區域的背面側保持在工件載台丨〇的表面 。此係爲了防止將工件W所曝光的區域固定在藉由投影 透鏡5所投影之遮罩圖案的成像位置，而使工件w在曝 光中朝向光軸方向或搬送方向移動之故。 第6圖係將第5圖之曝光裝置的遮罩、投影透鏡、工 件載台的部分抽出顯示的斜視圖。 如該圖所示，在遮罩Μ係形成有2個部位的對準標記 (遮罩標記）ΜΑΜ ’且在工件W係按每個曝光區域與遮 200907595 罩標記MAM的數量對應形成有2個部位的對準標記（工 件標記）WAM。其中’在本例中，工件標記WAM係形成 在帶狀工件W之周邊部的穿通孔，但當帶狀工件W具光 透過性時，亦可在工件W上形成標記WAM。 此外，在工件載台10係在藉由投影透鏡5而將遮罩 標記Μ AM予以投影的位置（2個部位）形成有缺口 1 〇 a 或貫穿孔，且在其下方係配置有對準顯微鏡（2台）12。 對準顯微鏡12係透過工件載台10的缺口 10a或貫穿 孔，進行檢測遮罩標記MAM與工件標記WAM。 當工件標記WAM被搬送至工件載台10的缺口 l〇a之 上，亦即對準顯微鏡1 2之上時，被吸附保持於工件載台 10° 藉由未圖示的移動機構，將對準光照明手段11插入 遮罩Μ的上方。對準光由對準光照明手段i 1被照射至遮 罩標記MAM ’藉由投影透鏡5，而使遮罩標記像通過作爲 工件標記W AM的穿通孔而投影在對準顯微鏡丨2上。 對準顯微鏡1 2係進行檢測所投影的遮罩標記像。同 時亦進行檢測作爲工件標記WAM之穿通孔的邊緣的像。 第5圖所示之控制部20係輸入藉由對準顯微鏡1 2所 檢測出的遮罩標記MAM像與工件標記WAM的邊緣像而 進行畫像處理。接著，根據該遮罩標記MAM與工件標記 WAM的位置資訊，以使兩者形成爲預定之位置關係的方 式驅動工件載台驅動機構6’而使形成有電路等遮罩圖案 的遮罩Μ與工件w的曝光區域相對位。 -6- 200907595 對位結束後，由光照射部4所放射的曝光光會透過遮 罩Μ、投影透鏡5而照射在工件W，且在工件W轉印遮 罩圖案。 當曝光結束時，帶狀工件W係受到搬送滾筒R4與按 壓滾筒R4’所夾持，以使接下來的曝光區域來到工件載台 10上的方式進行搬送、曝光。 如上所示’帶狀工件W係依序予以曝光，經由導引 滾筒R5、鬆緩部Α2，而被捲繞在捲繞滾筒2。此時，由 間隔件捲出滾筒2 a送出間隔件，曝光完畢的帶狀工件w 係連同間隔件一起被捲繞在捲繞滾筒2。 工件載台10的表面位置係事先藉由前述工件載台驅 動機構6，而被調節在投影透鏡5的聚焦位置。 (專利文獻1)日本專利第2886675號公報 【發明內容】 (發明所欲解決之課題） 形成在薄膜電路基板的電路圖案係隨著電子機器的高 速化、多功能化、小型化，而逐漸高密度化、微細化，亦 要求曝光裝置的曝光精度逐年提高。因此，曝光裝置的投 影透鏡係必須爲更高解析度者。但是，當在曝光裝置載置 高解析度的投影透鏡時，變成必須進行在以往並不需進行 的焦距調整。 其理由於以下説明。其中，所謂焦距調整係指將投影 在工件上的遮罩圖案像進行對焦。 200907595 (1 )投影透鏡的焦距位置係對於所設計的 溫度變化所造成之透鏡的膨脹收縮或依氣壓變化 透鏡與透鏡之間之空氣折射率的改變而改變。 焦距位置的變化若在投影透鏡的焦點深度（ Focus )內，即不會造成問題。但是，當焦距位 大於焦點深度時，曝光精度會降低。 (2 ) —般而言，投影透鏡係具有當提高解 焦點深度會變淺的傾向。例如，在解析度爲6μιη 影透鏡中，焦點深度爲約5 0 μηι，而使解析度成怎 右時 '焦點涂度係成爲約3 0 μ m。 (3 )此外，投影透鏡愈提高解析度，則所 的片數愈多，在支持透鏡的鏡筒內，透鏡與透鏡 會變大。該空間的壓力係難以跟隨放置於透鏡之 壓變化，當氣壓變低時，對於透鏡係施加由鏡筒 擠的力，此外，當氣壓變高時，則相反地作用朝 側按壓的力。因此，高解析度的投影透鏡係容易 變動的影響，焦距位置的變化亦會變大。 (5)以往當將曝光裝置安裝在使用者的工 使遮罩圖案的投影像在工件上成像的方式，調整 工件的距離（亦稱爲像原畫間距離），若以使設 的房間溫度爲大致一定的方式進行管理，則焦距 化係可在投影透鏡的焦點深度內。亦即，像原畫 調整若在安裝裝置時進行，則在之後即不需要再: 但是，當搭載在曝光裝置的投影透鏡爲高解 位置，依 所造成的 Depth of 置的變化 析度時， 左右的投 ! 4 μηι 左 使用透鏡 所夾空間 環境的氣 朝外側推 向鏡筒內 受到氣壓 廠時，以 自遮罩至 置有裝置 位置的變 間距離的 欠進行。 析度者時 -8 - 200907595 ’因溫度或氣壓的變化所產生的焦距位置的變化會大於投 影透鏡的焦點深度。 如上所述’焦距位置變化的原因係依溫度變化與氣壓 變化而產生，尤其會造成較大的影響者乃係藉由裝置的運 轉所產生的溫度變化。 藉由裝置運轉所產生的溫度變化主要有以下3個。 (a)曝光光通過投影透鏡時，透鏡會吸收光能量而 使溫度上升。另一方面，藉由工件的更換等而使快門關閉 ，當光變得不通過透鏡時，透鏡的溫度即會下降。基於該 溫度變化’使透鏡膨脹收縮，而使焦距位置產生變化。 (b )隨著透鏡的溫度變化，用以保持透鏡的鏡筒亦 藉由熱傳導而使溫度產生變化而膨脹收縮。藉此使透鏡的 位置產生變化，且焦距位置產生變化。 (c )上述鏡筒的溫度變化或出射曝光光的光源部的 熱會傳達至裝置的框體，而使裝置整體膨脹收縮。藉此使 自遮罩載台至工件載台的距離產生變化，且焦距位置產生 變化。 因此’爲了維持所希望的曝光精度，必須在1天中以 複數次每隔預定時間或按曝光次數定期地確認焦距位置， 且以使遮罩的投影像成像在工件上的方式進行遮罩與工件 之位置（像原畫間距離）的調整（焦距調整）。 進行焦距調整的最爲單純的方法係將焦距調整用圖案 實際上改變像原畫間距離而曝光在工件上，由其顯影結果 ，在形成精度最佳的圖案的位置設定像原畫間距離。但是 -9 - 200907595 ，該方法會有以下問題。 由於必須反覆進行曝光顯影，因此在調整設定時耗費 時間，在1天之中要進行好幾次，並不切實際。 考慮假如以上述方法進行焦距調整，而在曝光處理中 途（一批量的中途）進行的情形。若工件爲薄片，當某工 件結束曝光處理而由裝置搬出時，會暫時停止搬入下一個 工件。接著，將遮罩與工件更換成焦距調整用者，來進行 焦距調整。 但是，當工件爲帶狀時，由於在工件中途沒有間斷， 因此難以更換遮罩與工件。因此，無法在曝光處理中途（ 一批量的中途）進行焦距調整。 此外，以不進行曝光顯影而調整焦距的方法而言，考 慮將遮罩圖案透過投影透鏡進行投影，進行檢測所投影出 的圖案像，以使其對焦的方式調整像原畫間距離。 但是，在該方法中亦會有以下問題產生。 當使用投影像來進行焦距調整時，會在遮罩的某部位 形成焦距調整用圖案。此外，必須設置用以照明該焦距調 整用圖案的照明手段、及用以檢測並接受所投影出之圖案 像的受像手段。但是，設置焦距調整用照明手段或受像手 段會造成裝置成本上升。 因此，亦考慮使用供對位之用所形成的遮罩標記來進 行焦距調整（將遮罩對準標記兼作爲焦距調整用圖案）。 遮罩標記係藉由對準照明系統而被投影在對準顯微鏡上， 因此若可使用遮罩標記來進行焦距調整，則不需要重新設 -10- 200907595 置照明手段或受像手段。 但是，如以下說明所示，該方法亦會有問題產生。 在目前的帶狀工件之曝光裝置中所需的對位精度爲約 ±5 μηι，用以達成該精度之遮罩標記的大小係例如直徑約 0.5 mm的圓（作爲工件標記的穿通孔的直徑約1 mm )。 另一方面，當欲進行例如解析度爲4μηι之投影透鏡的 焦距調整時，確認與其同等的圖案像是否看得出來對焦與 否來進行調整。因此，焦距調整用圖案係必須爲數μιη ( 例如6 μ m )的線與間隙（L & S，1 i n e a n d s p a c e )的圖案。 因此，遮罩標記過大，並無法供焦距調整使用。 此外，在對準顯微鏡係設有用以使投影像成像在其受 像面的透鏡。因此，對準顯微鏡亦與投影透鏡相同地，依 溫度或氣壓的變化，而在焦距位置產生變化。因此，使對 準顯微鏡接受焦距調整用圖案的像來進行焦距調整時，變 成需要亦修正對準顯微鏡的焦距位置的變化，但該方法尙 未確立。 本發明係爲解決上述習知技術的問題點所硏創者，本 發明的目的在帶狀工件之曝光裝置中，即使工件呈帶狀， 亦可在曝光處理中途（一批量的中途）進行焦距調整，此 外’無須追加焦距調整專用照明手段或受像手段，另外不 會導致裝置成本上升，而可在短時間內進行焦距調整。 (解決課題之手段） 爲了解決上述課題，在本發明中，在上述工件載台之 -11 - 200907595 貫穿孔或缺口上設置光透過構件，在該光透過 準顯微鏡用焦距調整圖案，此外，在遮罩形成 焦距調整圖案，藉由上述對準顯微鏡，檢測上 用焦距調整圖案與上述對準顯微鏡用焦距調整 行焦距調整。 亦即，以下所示來進行焦距調整。 (1 )係具備：照射曝光光的光照射部； 成有圖案與遮罩對準標記之遮罩的遮罩載台； 工件對準標記的長形帶狀工件，且形成有缺口 工件載台；將形成在上述遮罩的圖案投影在上 影透鏡；配置在上述工件載台之貫穿孔或缺口 構件；設在上述光透過構件之下方的對準顯微 由該對準顯微鏡，檢測上述遮罩對準標記與上 標記，而進行遮罩之對位的控制部的帶狀工件 ，其中，在上述遮罩係形成投影透鏡用焦距調 外在上述光透過構件形成對準顯微鏡用焦距調 述控制部係藉由上述對準顯微鏡，檢測上述投 距調整圖案與上述對準顯微鏡用焦距調整圖案 距調整。 (2)在上述（1)中，對準顯微鏡係具備 檢測畫像的第1受像部；及以高倍率接受畫像 部，在進行遮罩與工件之對位時，係以第1受 準標記，在進行焦距調整時，則以第2受像部 整圖案。 構件形成對 投影透鏡用 述投影透鏡 圖案，來進 用以支持形 保持形成有 或貫穿孔的 述工件的投 上的光透過 鏡；以及藉 述工件對準 之曝光裝置 整圖案，此 整圖案，上 影透鏡用焦 ，而進行焦 :以低倍率 的第2受像 像部檢測對 檢測焦距調 -12- 200907595 (3)在上述（1) 、 （2)中，形成在遮罩的遮罩對 準標記係呈輪環狀，將形成在上述遮罩的投影透鏡用焦距 調整圖案作爲形成在上述遮罩對準標記之輪環內側的線與 間隙（1 i n e a n d s p a c e )的圖案。 (4 )在上述（1 ) 、 （ 2 ) 、 （ 3 )中，將工件對準標 記作爲形成在帶狀工件的貫穿孔。 (5)係如上述（1)至（4)之帶狀工件之曝光裝置 中的焦距調整方法，其特徵爲具備：藉由上述對準顯微鏡 ，接受上述對準顯微鏡用焦距調整圖案的像，以使該圖案 對焦的方式使工件載台朝光軸方向（Z方向）移動的第1 步驟；接受上述投影透鏡用焦距調整圖案的像，以使該圖 案對焦的方式，使遮罩載台朝光軸方向（Z方向）移動的 第2步驟；以及在保持上述步驟結束時之由遮罩載台至工 件載台的距離的狀態下，以相對於上述投影透鏡使工件載 台與遮罩載台成爲相等距離的方式，使遮罩載台與工件載 台移動的第3步驟。 (發明之效果） 在本發明中係可獲得以下之效果。 (1 )在遮罩形成焦距調整用圖案，藉由對準顯微鏡 對其投影像進行檢測攝像，以對焦的方式進行像原畫間距 離之調整，因此實際上無須對圖案進行曝光顯影，即可在 短時間內進行焦距調整。 (2)形成在遮罩的焦距調整用圖案係將形成在遮罩 -13- 200907595 的對準標記形成爲輪環狀且形成在其內側’因此即使爲在 工件中途沒有間斷的帶狀工件，亦可在曝光處理中途（一 批量的中途）進行焦距調整。 (3 )此外，藉由進行遮罩與工件的對位’可使焦距 調整用圖案對位在對準顯微鏡的視野內。因此’若進行遮 罩與工件的對位，即可立即移至焦距調整的作業’即使在 一批量的中途進行焦距調整’亦可極力防止產出降低。 (4)由於在工件載台設置對準顯微鏡之焦距調整用 圖案，因此在進行像原畫間距離的調整時，可補正對準顯 微鏡之焦距位置的變化部分。 【實施方式】 在第1圖、第2圖顯示本發明之實施例的裝置構成。 第1圖係顯示本實施例之帶狀工件之曝光裝置的整體構成 ，第2圖係顯示在第1圖所示裝置中，抽出顯示對準光照 明手段、遮罩載台、投影透鏡、工件載台、對準顯微鏡之 部分的圖。 在第1圖、第2圖中，遮罩載台13係藉由遮罩載台 移動機構14，至少朝Z方向（光軸方向，圖式上下方向 )移動。 工件載台10亦藉由工件載台移動機構6，朝光軸方向 (Z方向，圖式上下方向）移動。 遮罩載台1 3與工件載台丨〇係將投影透鏡5的焦點距 離（設計値）的位置作爲各載台之Z方向（光軸方向）的 -14- 200907595 原點位置而移動。控制部20係以原點位置、及各載台1 4 、10之Z方向（光軸方向）的移動原點而予以記億。 在工件載台10設有缺口 l〇a或貫穿孔，在其下方配 置有對準顯微鏡〗2。其中，對準顯微鏡1 2係相對於工件 載台10的移動而獨立存在。 在工件載台1 0的缺口或貫穿孔（以下主要以缺口加 以説明）1 〇a係嵌入有通過曝光波長光之材質的玻璃板 l〇b。玻璃板10b係不會突出於工件載台10表面更爲上方 〇 對準顯微鏡1 2係配置在該玻璃板1 〇b之下。與習知 例相同地，對準顯微鏡1 2係在供形成對準標記Μ AM的位 置配合其數量予以設置。在本實施例中，由於對準標記 Μ AM係形成在2個部位，因此對準顯微鏡1 2亦配合該部 位而設置2台。 此外’對準顯微鏡12係按每1台具備2個用以接收 畫像之CCD攝影機。其中一方爲低倍率用，另一方爲高 倍率用。藉由切換光路來變更倍率。低倍率（例如1 · 5倍 )係在進行遮罩與工件對位時，用在檢測遮罩標記與工件 標記。另一方面，高倍率（例如1 0倍）係在焦距調節時 用在檢測焦距調整用圖案。 上述以外的構成基本上與第5圖相同，由捲出滾筒1 捲出的帶狀工件W係經由鬆緩部A 1、中間導引滾筒R2 而藉由編碼器滾筒R 3與按壓滾筒R 3 ’予以夾持，經由曝 光部3’藉由搬送滾筒R4與按壓滾筒r4,予以夾持而搬送 -15- 200907595 。工件W係搬送藉由搬送滾筒R4的旋轉所設定的預定量 ，而被送至曝光部3的工件載台10上。 在曝光部3上係設有：由燈4a與聚光鏡4b所構成的 光照射部4;具有曝光在工件的圖案（遮罩圖案）的遮罩 M;及投影透鏡5。此外，工件載台10係安裝在工件載台 驅動機構6上，可以上下、左右方向予以驅動，並且可以 垂直於工件載台面的軸爲中心進行旋轉。 帶狀工件W係在曝光部3對位後予以曝光，經曝光 後的帶狀工件W係經由導引滾筒R5、鬆緩部A2而捲繞 在捲繞滾筒2。 在此說明投影透鏡之焦距調整用圖案、及對準顯微鏡 用之焦距調整用圖案。 如SLf所述’遮罩標記的大小（例如直徑0.5 m m )與焦 距調整用圖案的大小（例如6 μηι的L & S )並不相同。利用 該大小的不同，將焦距調整用圖案形成在遮罩標記的內側 〇200907595 IX. INSTRUCTIONS OF THE INVENTION [Technical Field] The present invention relates to an exposure apparatus for forming a pattern on an elongated strip-shaped workpiece of TAB (Tape Automated Bonding) or FPC (Flexible Printed Circuit) and a focal length in the exposure apparatus Adjustment method. [Prior Art] In a display panel such as a liquid crystal panel, a mobile phone, a digital camera, a 1C card, or the like, a film in which an integrated circuit is mounted on a resin film such as polyester or polyimide having a thickness of about 25 μm to 125 μm is used. Circuit board. In the manufacturing step of the thin film circuit substrate, for example, a strip-shaped workpiece having a width of 160 mm, a thickness of 1 μm, and a length of several hundred m is generally wound around a reel. Further, the thin film circuit board is formed by adhering a conductor (e.g., copper foil) to the resin film. The production of the thin film circuit substrate is carried out by repeating the steps of applying the resist, the exposure step of transferring the desired circuit pattern, the developing step of the resist, the etching step of removing the unnecessary conductor, and the like, for example, four times to five times. In each step, the thin film circuit substrate is taken up by a reel, processed, and wound again on a reel. Hereinafter, the thin film circuit substrate will be referred to as a belt-shaped workpiece. An exposure apparatus for transferring a circuit pattern to each of the exposed regions while transporting the above-described strip-shaped workpiece is disclosed, for example, in Patent Document 1. Fig. 5 shows an example of the configuration of an exposure apparatus for a belt-shaped workpiece. The strip-shaped workpiece W (hereinafter also referred to simply as the workpiece w) is superposed on a spacer for protecting the workpiece W and wound in a roll shape on the unwinding drum -4- 200907595 1 . The spacer is wound around the spacer winding roller la when pulled out by the take-up roll 1. The strip-shaped workpiece W wound up by the take-up drum 1 is held by the encoder roller R3 and the pressing roller r3' via the loose portion A1 and the intermediate guide roller R2. The encoder roller R3 is for confirming whether or not a roller has slipped in a conveyance roller to be described later when the workpiece is conveyed. The strip-shaped workpiece W pulled out by the unwinding drum 1 passes through the exposure unit 3, and is held by the conveyance roller R4 and the pressing roller R4. The workpiece w is conveyed to the workpiece stage 1 of the exposure unit 3 by a predetermined amount set by the rotation of the transport roller R4. The exposure unit 3 is provided with a light irradiation unit 4 composed of a lamp 4a and a condensing mirror 4b, a mask μ having a pattern (mask pattern) exposed to the workpiece, and a projection lens 5. Further, the workpiece stage 1 is attached to the workpiece stage driving mechanism 6 to be driven up and down and left and right, and is rotatable about an axis perpendicular to the workpiece stage. In the exposure unit 3, the back side of the exposed region of the strip-shaped workpiece w is held on the surface of the workpiece stage by means of holding means such as vacuum suction. In order to prevent the area where the workpiece W is exposed from being fixed to the imaging position of the mask pattern projected by the projection lens 5, the workpiece w is moved in the optical axis direction or the transport direction during exposure. Fig. 6 is a perspective view showing a portion of the mask, the projection lens, and the workpiece stage of the exposure apparatus of Fig. 5 taken out. As shown in the figure, two alignment marks (mask marks) ΜΑΜ ' are formed in the mask 且, and two pieces are formed corresponding to the number of cover marks MAM of each of the exposure areas and the cover 20907595. The alignment mark (work mark) of the part is WAM. In the present example, the workpiece mark WAM is formed in the through hole of the peripheral portion of the strip-shaped workpiece W, but when the strip-shaped workpiece W is light transmissive, the mark WAM may be formed on the workpiece W. Further, the workpiece stage 10 is formed with a notch 1 〇a or a through hole at a position (two locations) where the mask mark Μ AM is projected by the projection lens 5, and an alignment microscope is disposed under the workpiece stage 10 (2 units) 12. The alignment microscope 12 passes through the notch 10a or the through hole of the workpiece stage 10 to detect the mask mark MAM and the workpiece mark WAM. When the workpiece mark WAM is transported onto the notch 10a of the workpiece stage 10, that is, when it is aligned on the microscope 12, it is adsorbed and held on the workpiece stage by 10° by a moving mechanism (not shown). The quasi-light illumination means 11 is inserted above the mask Μ. The alignment light is irradiated to the mask mark MAM' by the alignment light illumination means i1 by the projection lens 5, and the mask mark image is projected onto the alignment microscope 2 by the through hole as the workpiece mark W AM. Align the microscope 1 2 to detect the projected mask mark image. At the same time, an image of the edge of the through hole as the workpiece mark WAM is also detected. The control unit 20 shown in Fig. 5 performs image processing by inputting the edge image of the mask mark MAM image and the workpiece mark WAM detected by the alignment microscope 12. Then, based on the position information of the mask mark MAM and the workpiece mark WAM, the workpiece stage drive mechanism 6' is driven to form a mask position pattern such as a circuit, and the like is formed in a predetermined positional relationship. The exposure area of the workpiece w is opposite. -6-200907595 After the alignment is completed, the exposure light emitted from the light-irradiating portion 4 is transmitted through the mask Μ and the projection lens 5 to the workpiece W, and the mask pattern is transferred to the workpiece W. When the exposure is completed, the strip-shaped workpiece W is conveyed and exposed by the transfer roller R4 and the pressing roller R4' so that the next exposure region comes onto the workpiece stage 10. The strip-shaped workpiece W is sequentially exposed as described above, and is wound around the winding drum 2 via the guide roller R5 and the loose portion Α2. At this time, the spacer is taken up by the spacer winding roller 2a, and the exposed strip-shaped workpiece w is wound around the winding drum 2 together with the spacer. The surface position of the workpiece stage 10 is adjusted to the focus position of the projection lens 5 by the workpiece stage driving mechanism 6 in advance. (Patent Document 1) Japanese Patent No. 2886675 (Problem to be Solved by the Invention) The circuit pattern formed on the thin film circuit board is gradually increased as the electronic device is speeded up, multi-functionalized, and miniaturized. Densification and miniaturization also require that the exposure accuracy of the exposure apparatus increases year by year. Therefore, the projection lens system of the exposure device must be a higher resolution. However, when a high-resolution projection lens is placed on the exposure apparatus, it is necessary to perform focus adjustment which is not required in the past. The reason is explained below. Here, the focal length adjustment refers to focusing a mask pattern image projected on a workpiece. 200907595 (1) The focal length of the projection lens changes with respect to the expansion contraction of the lens caused by the designed temperature change or the change in the refractive index of the air between the lens and the lens. If the change in the focal position is within the focus of the projection lens, there is no problem. However, when the focal length is greater than the depth of focus, the exposure accuracy is lowered. (2) In general, the projection lens has a tendency to become shallower when the depth of focus is increased. For example, in a resolution lens of 6 μm, the depth of focus is about 50 μm, and when the resolution is about right, the focus degree is about 30 μm. (3) In addition, the more the projection lens is increased in resolution, the more the number of sheets is, and the lens and the lens become larger in the lens barrel supporting the lens. The pressure in this space is difficult to follow the pressure change placed on the lens. When the air pressure is low, the force applied by the lens barrel is applied to the lens system, and when the air pressure is high, the force pressing toward the side is oppositely applied. Therefore, the high-resolution projection lens is susceptible to fluctuations, and the change in the focal length position also becomes large. (5) In the past, when the exposure device was mounted on the user's work to make the projection image of the mask pattern imaged on the workpiece, the distance of the workpiece (also referred to as the distance between the original paintings) was adjusted, and the room temperature was set. To manage in a substantially certain manner, the focal length can be within the depth of focus of the projection lens. That is, if the original picture adjustment is performed at the time of mounting the device, it is not necessary to do it later: However, when the projection lens mounted on the exposure device is in the high resolution position, depending on the degree of change caused by the Depth of Left and right shots! 4 μηι When the gas in the space enclosed by the lens is pushed outward toward the inside of the lens barrel by the air pressure factory, the distance between the self-mask and the position where the device is placed is not performed. When the degree of resolution is -8 - 200907595 'The change in the focal position due to the change in temperature or air pressure will be greater than the depth of focus of the projection lens. As described above, the cause of the change in the focal length position is caused by the change in temperature and the change in the air pressure, and in particular, the large influencer is the temperature change caused by the operation of the device. There are three main temperature changes caused by the operation of the device. (a) When the exposure light passes through the projection lens, the lens absorbs the light energy to raise the temperature. On the other hand, the shutter is closed by replacement of the workpiece or the like, and when the light does not pass through the lens, the temperature of the lens is lowered. Based on this temperature change, the lens is expanded and contracted, and the focal position is changed. (b) As the temperature of the lens changes, the lens barrel for holding the lens also expands and contracts by changing the temperature by heat conduction. Thereby, the position of the lens is changed, and the position of the focal length is changed. (c) The temperature change of the lens barrel or the heat of the light source unit that emits the exposure light is transmitted to the casing of the apparatus, and the entire apparatus is expanded and contracted. Thereby, the distance from the mask stage to the workpiece stage is changed, and the focal position changes. Therefore, in order to maintain the desired exposure accuracy, it is necessary to periodically confirm the focal length position every predetermined time or number of exposures in one day, and to mask the projection image of the mask on the workpiece. Adjustment of the position of the workpiece (like the distance between the original paintings) (focal length adjustment). The simplest method of performing the focus adjustment is to expose the focal length adjustment pattern to the workpiece by actually changing the distance between the original paintings, and to set the distance between the original paintings at the position where the optimum precision is formed by the development result. However, -9 - 200907595, this method will have the following problems. Since it is necessary to repeatedly perform exposure and development, it takes time to adjust the settings, and it is not practical to perform several times in one day. Consider the case where the focus adjustment is performed by the above method and the middle of the exposure process (in the middle of a batch). If the workpiece is a sheet, when a workpiece finishes the exposure process and is carried out by the device, the next workpiece is temporarily stopped. Next, replace the mask and the workpiece with the focus adjustment user to adjust the focus. However, when the workpiece is in the form of a strip, it is difficult to replace the mask and the workpiece because there is no interruption in the middle of the workpiece. Therefore, the focus adjustment cannot be performed in the middle of the exposure process (in the middle of a batch). Further, in the method of adjusting the focal length without performing exposure and development, it is considered that the mask pattern is projected through the projection lens, and the projected pattern image is detected to adjust the distance between the original images. However, the following problems also occur in this method. When the projection image is used for focus adjustment, a focus adjustment pattern is formed at a certain portion of the mask. Further, it is necessary to provide an illumination means for illuminating the focus adjustment pattern, and an image receiving means for detecting and accepting the projected pattern image. However, setting the focus adjustment illumination means or the receiving means causes the device cost to rise. Therefore, it is also considered to use the mask mark formed for the alignment to perform the focus adjustment (the mask alignment mark is also used as the focus adjustment pattern). The mask mark is projected onto the alignment microscope by aligning the illumination system. Therefore, if the mask mark can be used for focus adjustment, it is not necessary to reset the illumination means or the receiving means. However, as shown in the following description, this method also has problems. The alignment accuracy required in the current exposure apparatus for strip-shaped workpieces is about ±5 μηι, and the size of the mask mark for achieving this precision is, for example, a circle having a diameter of about 0.5 mm (the diameter of the through-hole as a workpiece mark) About 1 mm). On the other hand, when it is desired to perform, for example, the focal length adjustment of the projection lens having a resolution of 4 μm, it is confirmed whether or not the same pattern image is observed to be focused or not. Therefore, the pattern for focal length adjustment must be a pattern of lines and gaps (L & S, 1 i n e a n d s p a c e ) of several μηη (for example, 6 μm). Therefore, the mask mark is too large and cannot be used for focus adjustment. Further, a lens for imaging the projection image on the image receiving surface thereof is provided on the alignment microscope. Therefore, the alignment microscope also changes in the focal length position in accordance with the change in temperature or air pressure, similarly to the projection lens. Therefore, when the alignment microscope is subjected to the focus adjustment of the image for the focus adjustment pattern, it is necessary to correct the change in the focal length position of the alignment microscope, but this method is not established. The present invention is directed to solving the problems of the above-mentioned prior art, and the object of the present invention is to achieve a focal length in the middle of an exposure process (in the middle of a batch) in an exposure apparatus for a belt-shaped workpiece even if the workpiece is in a strip shape. In addition, there is no need to add special illumination means or image receiving means for focal length adjustment, and the device cost is not increased, and the focus adjustment can be performed in a short time. (Means for Solving the Problem) In order to solve the above problems, in the present invention, a light transmitting member is provided in a through hole or a notch of the workpiece stage -11 - 200907595, and the light is transmitted through the quasi-microscope to adjust the pattern of the focal length, and The mask forms a focal length adjustment pattern, and the focal length adjustment pattern is detected by the alignment microscope and the focal length adjustment of the alignment microscope for the alignment microscope. That is, the focus adjustment is performed as shown below. (1) comprising: a light irradiation portion that irradiates exposure light; a mask stage that is patterned with a mask and a mask alignment mark; a long strip-shaped workpiece that is aligned with the workpiece, and a notched workpiece stage Projecting a pattern formed on the mask on the upper lens; a through hole or a notch member disposed on the workpiece stage; and an alignment microscope disposed under the light transmitting member to detect the cover by the alignment microscope a strip-shaped workpiece in which a mask alignment mark and an upper mark are used to perform a mask alignment control unit, wherein the light-shielding member is used to form an alignment microscope focal length in addition to the focus of the projection lens. The control unit detects the pitch adjustment pattern and the focus adjustment pattern pitch adjustment of the alignment microscope by the alignment microscope. (2) In the above (1), the alignment microscope includes a first image receiving portion for detecting an image; and the image receiving portion is received at a high magnification, and when the mask is aligned with the workpiece, the first image is marked. When the focus adjustment is performed, the second image receiving portion is patterned. The member forms a projection lens pattern for the projection lens to support the light-transmitting mirror for supporting the projection of the workpiece formed with or through the hole; and the entire pattern of the exposure device by means of the workpiece alignment, The upper lens is focused on the focal length: the second image-receiving portion is detected at a low magnification to detect the focal length. -12- 200907595 (3) In the above (1), (2), the mask pair formed in the mask The quasi-marking is in the form of a wheel ring, and the focal length adjustment pattern of the projection lens formed on the mask is a pattern of lines and gaps formed inside the wheel ring of the mask alignment mark. (4) In the above (1), (2), and (3), the workpiece alignment marks are formed as through holes formed in the strip-shaped workpiece. (5) The method of adjusting a focal length in the exposure apparatus of the strip-shaped workpiece according to the above (1) to (4), characterized in that the image of the focus adjustment pattern for the alignment microscope is received by the alignment microscope, a first step of moving the workpiece stage in the optical axis direction (Z direction) so that the pattern is focused; receiving the image of the projection lens focal length adjustment pattern, so that the pattern is focused, and the mask stage is oriented a second step of moving in the optical axis direction (Z direction); and in a state where the distance from the mask stage to the workpiece stage is maintained at the end of the above step, the workpiece stage and the mask are carried with respect to the projection lens The third step of moving the mask stage and the workpiece stage in such a manner that the stage becomes an equal distance. (Effects of the Invention) In the present invention, the following effects can be obtained. (1) Forming a focal length adjustment pattern in the mask, and detecting and imaging the projection image by the alignment microscope, and adjusting the distance between the original paintings by focusing, so that it is not necessary to expose and develop the pattern. Focus adjustment is performed in a short time. (2) The pattern for adjusting the focal length formed in the mask is such that the alignment mark formed in the mask-13-200907595 is formed into a ring shape and formed on the inner side thereof. Therefore, even if it is a strip-shaped workpiece which is not interrupted in the middle of the workpiece, The focus adjustment can also be performed in the middle of the exposure process (in the middle of a batch). (3) Further, by performing the alignment of the mask with the workpiece, the focus adjustment pattern can be aligned in the field of view of the alignment microscope. Therefore, if the alignment of the mask and the workpiece is performed, the operation of the focus adjustment can be immediately performed. Even if the focus adjustment is performed in the middle of a batch, the output can be prevented from being lowered as much as possible. (4) Since the focal length adjustment pattern of the alignment microscope is set on the workpiece stage, when the distance between the original images is adjusted, the change in the focal position of the alignment microscope can be corrected. [Embodiment] The device configuration of the embodiment of the present invention is shown in Figs. 1 and 2 . 1 is a view showing an overall configuration of an exposure apparatus for a strip-shaped workpiece of the present embodiment, and FIG. 2 is a view showing an apparatus for displaying alignment light, a mask stage, a projection lens, and a workpiece in the apparatus shown in FIG. A diagram of the stage and the part of the microscope. In the first and second figures, the mask stage 13 is moved by at least the Z direction (the optical axis direction, the vertical direction of the drawing) by the mask stage moving mechanism 14. The workpiece stage 10 is also moved in the optical axis direction (Z direction, the vertical direction of the drawing) by the workpiece stage moving mechanism 6. The position of the focal length (design 値) of the projection lens 5 by the mask stage 13 and the workpiece stage is moved as the origin position of the -14-200907595 in the Z direction (optical axis direction) of each stage. The control unit 20 recognizes the origin of the origin and the movement origin of the Z direction (optical axis direction) of each of the stages 1 4 and 10 . The workpiece stage 10 is provided with a notch l〇a or a through hole, and an alignment microscope 2 is disposed under the workpiece stage 10. Among them, the alignment microscope 12 is independently present with respect to the movement of the workpiece stage 10. In the notch or through-hole of the workpiece stage 10 (hereinafter, mainly described by a notch) 1 〇a is a glass plate 100b through which a material of the exposure wavelength light is embedded. The glass plate 10b does not protrude above the surface of the workpiece stage 10. 对准 The alignment microscope 1 2 is disposed below the glass plate 1 〇b. In the same manner as the conventional example, the alignment microscope 12 is set in such a manner as to form the alignment mark Μ AM in accordance with the number thereof. In the present embodiment, since the alignment mark Μ AM is formed in two places, the alignment microscope 12 is also provided with two in place. Further, the alignment microscope 12 is provided with two CCD cameras for receiving images. One of them is for low magnification and the other is for high magnification. The magnification is changed by switching the optical path. The low magnification (for example, 1.5 times) is used to detect the mask mark and the workpiece mark when the mask is aligned with the workpiece. On the other hand, a high magnification (e.g., 10 times) is used to detect a focus adjustment pattern in the focus adjustment. The configuration other than the above is basically the same as that of Fig. 5, and the strip-shaped workpiece W wound by the take-up drum 1 passes through the loose portion A 1 and the intermediate guide roller R2 by the encoder roller R 3 and the pressing roller R 3 'The clamp is carried out, and the conveyance roller R4 and the press roller r4 are held by the exposure unit 3', and are carried and conveyed -15-200907595. The workpiece W is conveyed to the workpiece stage 10 of the exposure unit 3 by a predetermined amount set by the rotation of the transport roller R4. The exposure unit 3 is provided with a light irradiation unit 4 composed of a lamp 4a and a condensing mirror 4b, a mask M having a pattern (mask pattern) exposed to the workpiece, and a projection lens 5. Further, the workpiece stage 10 is attached to the workpiece stage driving mechanism 6, and is driven in the vertical direction and the horizontal direction, and is rotatable about the axis perpendicular to the workpiece stage surface. The strip-shaped workpiece W is exposed after the exposure portion 3 is aligned, and the exposed strip-shaped workpiece W is wound around the winding drum 2 via the guide roller R5 and the loose portion A2. Here, the focal length adjustment pattern of the projection lens and the focal length adjustment pattern for the alignment microscope will be described. The size of the 'mask mark (e.g., 0.5 m in diameter) as described in SLf is not the same as the size of the focus adjustment pattern (e.g., L & S of 6 μηι). The focal length adjustment pattern is formed on the inner side of the mask mark by the difference in size 〇
亦即，如第3圖（a ) ( b )所示，將遮罩標記MAM 形成爲外形例如爲cp〇.5mm且內徑爲（p0.3mm的輪環（圓 環）形狀。接著，將例如6μιη之L&S的焦距調整用圖案 (以下爲焦距圖案F Ρ )形成在φ 0.3 m m之內徑的內側。因 此，在進行遮罩Μ與工件W的對位時，當遮罩標記MAM 被投影在對準顯微鏡上，焦距圖案FP亦同時地被投影在 對準顯微鏡1 2上。其中，第3圖（a )係放大顯示遮罩標 記MAM與焦距圖案FP之投影像、穿通孔（工件標記 -16- 200907595 w AM )之邊緣、及形成在玻璃板之對準顯微鏡之焦距調整 用圖案AP，第3圖（b)係放大顯示（a)之遮罩標記與 焦距圖案FP與AP的放大圖。 對準顯微鏡用之焦距調整用圖案AP係形成在被嵌入 於工件載台1 〇之缺口或貫穿孔的玻璃板1 Ob。 形成圖案AP的位置係在投影出遮罩標記MAM或焦 距圖案FP時不會重疊的位置，而形成爲對準顯微鏡1 2的 視野內。例如，如第3圖（b )所示，爲圓環狀遮罩標記 像的內側，在焦距圖案FP像的旁邊。 接著說明遮罩Μ與工件W之對位及投影透鏡及對準 顯微鏡之焦距調整的順序。 (1)藉由搬送滾筒R4的旋轉，將工件W搬送預先 設定的距離，使作爲工件標記WAM的穿通孔停止在對準 顯微鏡1 2之上。在工件W係按每一曝光區域以預定間距 形成有穿通孔，搬送滾筒R係旋轉相當於該間距的距離份 。 將工件W保持在工件載台1 〇上。 (2 )藉由對準光照明手段移動機構1 1 a，將對準光照 明手段1 1插入遮罩Μ的上方（遮罩Μ與光照射部4之間 )° 對準光照明手段Π係對於遮罩標記ΜΑΜ及形成在其 中的焦距圖案FP照射對準光。在此，對準光的波長係與 由光照射部4所照射的曝光光相同的波長。 (3 )藉由對準光所照明的遮罩標記ΜΑΜ與焦距圖案 FP的像係被投影在設在工件載台1 0之缺口或貫穿孔的玻 -17- 200907595 璃板1 0 b上。 如第3圖（a )所示，對準顯微鏡係接受遮罩標記 MAM與焦距圖案FP的投影像、以及作爲工件標記WAM 之穿通孔的邊緣、形成在玻璃板之對準顯微鏡之焦距調整 用圖案AP的像。 (4)遮罩Μ與工件W的對位係以形成爲預先設定好 輪環狀遮罩標記ΜΑΜ、與作爲遮罩標記WAM之穿通孔邊 緣的位置關係的方式來進行。此時，遮罩標記MAM與遮 罩標記WAM的檢測係使用對準顯微鏡的低倍率。控制部 20係根據遮罩標記MAM與工件標記WAM的位置資訊來 進行對位。 藉由遮罩Μ與工件W的對位，使圓環狀遮罩標記 ΜΑΜ與穿通孔的工件標記WAM形成爲預定的位置關係。 藉此，形成在圓環狀遮罩標記MAM的內側的投影透鏡用 焦距圖案FP、與形成在工件載台之玻璃板上的對準顯微 鏡用焦距圖案AP係並排配置在對準顯微鏡的視野內。藉 此可進行以下的焦距調整動作。 (5 )投影透鏡5的焦距調整及對準顯微鏡1 2的焦距 調整係以下述順序進行。其中，此時，焦距圖案FP與AP 的檢測係使用對準顯微鏡的高倍率。 第4圖（a )至（d )係用以說明焦距調整時之遮罩與 工件之動作的説明圖，使用第4圖說明本實施例之焦距調 整順序。 (a)如第4圖（a)所示，對準顯微鏡12係同時接 -18- 200907595 受投影在玻璃板1 0 b上的投影透鏡焦距調整用圖案F P、 與形成在玻璃板10b上的對準顯微鏡焦距調整用圖案aP 的像。其受像信號係被傳送到控制部20。 控制部20係對所接受到的投影透鏡用焦距圖案ρρ與 對準顯微鏡用焦距圖案AP的像進行畫像處理。 在此’遮罩載台13與工件載台1〇係位在原點位置。 所謂原點位置係如上所述，指投影透鏡5之焦點距離（設 計値）的位置。 (b )進行對準顯微鏡的焦距調整。亦即，如第4圖 (b )所示，控制部20係以與圖案AP對焦的方式，使工 件載台10朝上下方向（光軸方向·Ζ方向）移動。若與 圖案ΑΡ對焦，控制部20係停止工件載台1 〇的移動，而 記憶距離原點位置的移動距離Α。 (c )如第4圖（c )所示，控制部20係以與圖案FP 對焦的方式，使遮罩載台13朝上下方向（光軸方向· Z 方向）移動。若配合圖案FP的焦距’控制部20係停止遮 罩載台1 3的移動，而記憶距離原點位置的移動距離B。 遮罩載台的移動距離B必定大於工件載台1〇的移動距離 A。 其中，對準顯微鏡12之焦距調整與投影透鏡5之焦 距調整可以相反順序來進行’亦可同時進行。 在該狀態下，對準顯微鏡係在工件載台10的玻璃板 1 Ob上對焦，焦距圖案FP像係在工件載台1 0的玻璃上， 在已對焦的狀態下予以投影。該狀態下之由遮罩載台1 3 -19- 200907595 至工件載台10的距離係目前環境下曝光裝置之焦距 的像原畫間距離D。 在此，並非由於已對焦而可在該狀態下進行曝光 。在該狀態下，通常由遮罩Μ至投影透鏡5的距離、 投影透鏡5至工件載台1〇的距離並不相等。當兩者 不等時，會在投影像發生因像差所造成的變形。 因此，在保持有該像原畫間距離D的狀態下，必 使由遮罩Μ至投影透鏡5的距離、與由投影透鏡5至 載台1 〇的距離彼此相等的方式，使遮罩載台1 3與工 台1 0移動。 (d)因此，如第4圖（d)所示，由上述所記憶 罩載台13的移動距離B減去工件載台10的移動距離 再將該値除以2。該値設爲C。接著，遮罩載台1 3係 原點位置朝上方向移動至距離C的位置，而且工件 1 〇係由該原點位置朝下方向移動至距離C的位置。 一來，在保持對焦之像原畫間距離D的狀態下，可使 罩Μ至投影透鏡5的距離、與由投影透鏡5至工件 1 〇的距離相等。 以上即結束投影透鏡及對準顯微鏡的焦距調整。 如以上所7Κ，遮罩Μ與工件W的對位及對焦一 ，即在該狀態下，重新開始曝光動作。 在工件上係獲得已對焦的遮罩圖案的投影像。在 態下，由光照射部4所放射的曝光光係透過遮罩Μ、 透鏡5而照射在工件W，且將遮罩圖案轉印在工件w 對焦 處理 與由 距離 須以 工件 件載 的遮 A， 由該 載台 如此 由遮 載台 結束 該狀 投影 -20- 200907595 當曝光結束，帶狀工件w係藉由搬送滾筒R4與按壓 滾筒R4 ’予以夾持，且以使接下來的曝光區域到達工件載 台10上的方式予以搬送而進行曝光。 如前所述，經曝光的帶狀工件W係經由導引滾筒R5 、鬆緩部A2而被捲繞在捲繞滾筒2。此時，由間隔件捲 出滾筒2 a送出間隔件，曝光完畢的帶狀工件W係連同間 隔件一起被捲繞在捲繞滾筒2。 其中，在上述實施例中，係就工件標記爲形成在帶狀 工件之周邊部的穿通孔的情形加以説明，但當帶狀工件具 光透射性時，亦可爲將標記形成在工件上者，而非爲穿通 孔。 此外，近來由於提高遮罩與工件的對位精度，因此會 有將對準標記形成在2個部位以上，例如4個部位的情形 。此時，對準顯微鏡係配合對準標記數量而設置4台。其 中’若設置4台對準顯微鏡，則亦可檢測出工件載台的傾 斜量。 【圖式簡單說明】 第1圖係顯示本發明之實施例之帶狀工件之曝光裝置 的整體構成圖。 第2圖係抽出顯示第1圖所示裝置中之對準光照明手 段、遮罩載台、投影透鏡、工件載台、對準顯微鏡之部分 的斜視圖。 第3圖係放大顯示遮罩標記Μ AM、焦距調整用圖案 -21 - 200907595 FP之投影像、焦距調整用圖案AP、工件標記WAM的放 大圖。 第4圖係用以說明焦距調整時之遮罩與工件之動作的 説明圖。 第5圖係顯示帶狀工件之曝光裝置之構成之一例圖。 第6圖係抽出顯示第5圖之曝光裝置之遮罩、投影透 鏡、工件載台之部分的斜視圖。 【主要元件符號說明】 1 _·捲出滾筒 2 :捲繞滾筒 3 :曝光部 4 :光照射部 5 :投影透鏡（鏡筒） 6:工件載台驅動機構 1 〇 :工件載台 1 〇 a :缺口（貫穿孔） 1 〇 b :玻璃板 1 1 :對準光照明手段 1 2 :對準顯微鏡 1 2 a : 1 〇倍用受像元件 1 2 b : 1 _ 5倍用受像元件 13 :遮罩載台 14 :遮罩載台移動機構 -22- 200907595 2 0 :控制部 Μ :遮罩 W :帶狀工件 Μ AM :遮罩標記 WAM :工件標記 FP :投影透鏡的焦距調整用圖案 AP :對準顯微鏡的焦距調整用圖案 -23-That is, as shown in Fig. 3 (a) (b), the mask mark MAM is formed into a shape of, for example, cp 〇 5 mm and an inner diameter of (p 0.3 mm in a ring (ring) shape. For example, the focal length adjustment pattern of L&S of 6 μm (hereinafter, the focal length pattern F Ρ ) is formed inside the inner diameter of φ 0.3 mm. Therefore, when the mask Μ is aligned with the workpiece W, when the mask mark MAM Projected on the alignment microscope, the focal length pattern FP is simultaneously projected onto the alignment microscope 12. In Fig. 3(a), the projection image and the through hole of the mask mark MAM and the focal length pattern FP are enlarged. The edge of the workpiece mark-16- 200907595 w AM ) and the focal length adjustment pattern AP formed on the alignment plate of the glass plate, and Fig. 3(b) shows the mask mark and focal length pattern FP and AP of (a) enlarged. The focal length adjustment pattern AP for the alignment microscope is formed on the glass plate 1 Ob embedded in the notch or through hole of the workpiece stage 1. The position of the pattern AP is projected on the mask mark MAM or The focal length pattern FP does not overlap the position, but is formed to align the microscope 1 2 For example, as shown in Fig. 3(b), the inner side of the annular mask mark image is next to the focal length pattern FP image. Next, the alignment of the mask Μ with the workpiece W and the projection lens and alignment will be described. (1) The workpiece W is transported by a predetermined distance by the rotation of the transport roller R4, and the through hole as the workpiece mark WAM is stopped on the alignment microscope 12. Each of the exposure regions is formed with a through-hole at a predetermined pitch, and the transport roller R is rotated by a distance corresponding to the pitch. The workpiece W is held on the workpiece stage 1 (2) by the alignment light illumination means 1 1 a, the alignment light illumination means 1 1 is inserted above the mask ( (between the mask Μ and the light illuminating portion 4). Aligning the light illuminating means 对于 for the mask mark ΜΑΜ and the focal length pattern FP formed therein The alignment light is irradiated. Here, the wavelength of the alignment light is the same as the exposure light irradiated by the light irradiation unit 4. (3) The image of the mask mark 焦 and the focal length pattern FP illuminated by the alignment light Is projected on the notch or through hole provided in the workpiece stage 10 Glass 17- 200907595 Glass plate 1 0 b. As shown in Fig. 3(a), the alignment microscope receives the projection image of the mask mark MAM and the focal length pattern FP, and the edge of the through hole as the workpiece mark WAM. The image of the focal length adjustment pattern AP formed on the glass plate is aligned with the workpiece. (4) The alignment of the mask Μ and the workpiece W is formed such that the wheel ring mask mark 预先 is set in advance, and is used as a mask mark. The positional relationship of the WAM through the edge of the through hole is performed. At this time, the detection of the mask mark MAM and the mask mark WAM uses a low magnification of the alignment microscope. The control unit 20 performs alignment based on the position information of the mask mark MAM and the workpiece mark WAM. By the alignment of the mask and the workpiece W, the annular mask mark ΜΑΜ and the workpiece mark WAM of the through hole are formed in a predetermined positional relationship. Thereby, the projection lens focal length pattern FP formed on the inner side of the annular mask mark MAM and the alignment microscope focal length pattern AP formed on the glass plate of the workpiece stage are arranged side by side in the field of view of the alignment microscope. . By this, the following focus adjustment operation can be performed. (5) The focal length adjustment of the projection lens 5 and the focal length adjustment of the alignment microscope 12 are performed in the following order. In this case, the detection of the focal length pattern FP and the AP uses a high magnification of the alignment microscope. Fig. 4 (a) to (d) are explanatory views for explaining the operation of the mask and the workpiece during the focus adjustment, and the focus adjustment sequence of the present embodiment will be described using Fig. 4. (a) As shown in Fig. 4(a), the alignment microscope 12 is simultaneously connected to -18-200907595 by the projection lens focal length adjustment pattern FP projected on the glass plate 10b, and formed on the glass plate 10b. Align the image of the pattern aP for the focal length adjustment of the microscope. The image signal system is transmitted to the control unit 20. The control unit 20 performs image processing on the received focal length pattern ρρ of the projection lens and the image of the focal length pattern AP for the alignment microscope. Here, the mask stage 13 and the workpiece stage 1 are tied at the origin position. The origin position is the position of the focal length (design 値) of the projection lens 5 as described above. (b) Perform focus adjustment of the alignment microscope. That is, as shown in Fig. 4(b), the control unit 20 moves the workpiece stage 10 in the vertical direction (optical axis direction·Ζ direction) so as to be in focus with the pattern AP. When focusing on the pattern ,, the control unit 20 stops the movement of the workpiece stage 1 , and memorizes the movement distance Α from the origin position. (c) As shown in FIG. 4(c), the control unit 20 moves the mask stage 13 in the vertical direction (the optical axis direction·the Z direction) so as to be in focus with the pattern FP. When the focal length of the matching pattern FP' control unit 20 stops the movement of the mask stage 13, the distance B from the origin position is memorized. The moving distance B of the mask stage must be greater than the moving distance A of the workpiece stage 1〇. Here, the adjustment of the focal length of the alignment microscope 12 and the adjustment of the focal length of the projection lens 5 can be performed in the reverse order. In this state, the alignment microscope is focused on the glass plate 1 Ob of the workpiece stage 10, and the focal length pattern FP image is projected on the glass of the workpiece stage 10, and is projected while being in focus. The distance from the mask stage 1 3 -19- 200907595 to the workpiece stage 10 in this state is the distance D between the original paintings of the focal length of the exposure apparatus in the current environment. Here, exposure is not performed in this state because it is in focus. In this state, the distance from the mask to the projection lens 5 and the distance from the projection lens 5 to the workpiece stage 1 are generally not equal. When the two are not equal, the image will be deformed due to aberrations. Therefore, in a state where the distance D between the original images is maintained, the distance from the mask to the projection lens 5 and the distance from the projection lens 5 to the stage 1 are necessarily equal to each other, so that the mask is carried. Station 1 3 moves with the station 10 . (d) Therefore, as shown in Fig. 4(d), the moving distance B of the memory cover stage 13 is subtracted from the moving distance of the workpiece stage 10, and the value is divided by two. This is set to C. Next, the mask stage 13 is moved to the position of the distance C in the upward direction, and the workpiece 1 is moved from the origin position downward to the position of the distance C. First, the distance from the projection lens 5 to the projection lens 5 can be made equal to the distance from the projection lens 5 to the workpiece 1 状态 in a state where the distance D between the original images is maintained. This completes the focal length adjustment of the projection lens and the alignment microscope. As described above, the alignment of the mask Μ with the workpiece W and the focus one, that is, in this state, the exposure operation is restarted. A projected image of the focused mask pattern is obtained on the workpiece. In the state, the exposure light emitted by the light irradiation unit 4 is transmitted through the mask Μ and the lens 5 to illuminate the workpiece W, and the mask pattern is transferred to the workpiece w. The focusing process and the distance are required to be carried by the workpiece. A, the stage is finished by the loading table by the covering stage. -20- 200907595 When the exposure is completed, the strip workpiece w is held by the conveying roller R4 and the pressing roller R4', so that the next exposure area is made. The method of transporting to the workpiece stage 10 is carried out and exposed. As described above, the exposed strip-shaped workpiece W is wound around the winding drum 2 via the guide roller R5 and the loose portion A2. At this time, the spacer is fed out from the spacer 2a, and the exposed strip-shaped workpiece W is wound around the winding drum 2 together with the spacer. In the above embodiment, the case where the workpiece is marked as a through hole formed in the peripheral portion of the strip-shaped workpiece is described, but when the strip-shaped workpiece has light transmittance, the mark may be formed on the workpiece. Instead of punching through holes. Further, recently, since the alignment accuracy between the mask and the workpiece is improved, there are cases where the alignment mark is formed in two or more places, for example, four places. At this time, the alignment microscope is provided with four sets of alignment marks. If the four alignment microscopes are installed, the tilt amount of the workpiece stage can also be detected. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the overall configuration of an exposure apparatus for a belt-shaped workpiece according to an embodiment of the present invention. Fig. 2 is a perspective view showing a portion of the alignment light illumination means, the mask stage, the projection lens, the workpiece stage, and the alignment microscope in the apparatus shown in Fig. 1. Fig. 3 is an enlarged view showing the mask mark Μ AM and the focus adjustment pattern -21 - 200907595 FP projection image, focus adjustment pattern AP, and workpiece mark WAM. Fig. 4 is an explanatory view for explaining the action of the mask and the workpiece during the focus adjustment. Fig. 5 is a view showing an example of the configuration of an exposure apparatus for a strip-shaped workpiece. Fig. 6 is a perspective view showing a portion showing a mask, a projection lens, and a workpiece stage of the exposure apparatus of Fig. 5. [Description of main component symbols] 1 _·Reel roller 2 : Winding roller 3 : Exposure section 4 : Light irradiation section 5 : Projection lens (lens barrel) 6 : Workpiece stage drive mechanism 1 〇 : Workpiece stage 1 〇a : notch (through hole) 1 〇b : glass plate 1 1 : alignment light illumination means 1 2 : alignment microscope 1 2 a : 1 受 multiple imaging element 1 2 b : 1 _ 5 times with imaging element 13 : Cover table 14 : Mask stage moving mechanism -22- 200907595 2 0 : Control unit Μ : Mask W : Tape workpiece Μ AM : Mask mark WAM : Work mark FP : Projection lens focal length adjustment pattern AP : Alignment microscope focus pattern -23-