TW200901530A - Long lifetime phosphorescent organic light emitting device (OLED) structures - Google Patents

Abstract

An organic light emitting device is provided having an emissive layer with an internal interface. The concentration of a second phosphorescent material in a second organic layer is different from the concentration of a first phosphorescent material in a first organic layer, creating the interface. The materials in the first and second organic layers may be the same or different. In addition to this interface within the emissive layer, the device has one or more features designed to mitigate failure mechanisms which may be associated with electrons or excitons passing from the cathode through the emissive layer to damage organic layers on the anode side of the emissive layer. In addition, devices are provided having an interface within the emissive layer as described above, and a lower energy emissive material on at least one side of the interface.

Description

200901530 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an organic light-emitting device (OLED). More specifically, the invention relates to 〇 L E D having a specific structure that enhances the lifespan. The purpose of this application is to claim the priority of US Patent Provisional Application No. 6/877,696, which was filed on December 28, 2, GG, and the US Patent Provisional Application No. 6G/9GM24, filed on February 8, 2007. By reference and in this article. The following claims are made by one or more of the following parties to the University Alliance Joint Research Association, or by one or more of the following parties representing the University Alliance Joint Research Agreement and/or the following parties to the University Alliance Joint Research Agreement One or more related: Regents of the University of Michigan, Princeton UniVersity, University of Southern California (The ―Kissing Southern California) ^ the Universal Display C〇rporation 0 It is valid before and at the date t of the claimed invention, and the claimed invention is completed as a result of activities carried out within the scope of the invention. [Prior Art] Optoelectronic devices using organic materials are increasingly required for several reasons. Many of the materials used to make such devices are relatively inexpensive' so organic optoelectronic devices have a cost advantage over inorganic devices. In addition, the inherent properties of the organic material, such as its flexibility, can make it very suitable for applications such as the manufacture of flexible substrates. Examples of organic optoelectronic devices include organic light-emitting devices (OLEDs), organic optoelectronic crystals, organic photovoltaic cells, and organic light detection. 12E110.doc 200901530 Machine materials may have wavelengths that are superior to conventional materials in which the emission layer of the device emits light. . D uses a thin organic film that emits light when a voltage is applied to the entire device. For applications such as flat panel displays, lighting and backlighting,

Device. For OLEDs, there are performance advantages. For example, there are techniques that can be easily tuned with appropriate dopants. - </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; One application of phosphorescent emissive molecules is full color display. The industry standard for this display requires a pixel that is suitable for emitting a particular color (called v, saturated &quot;color), which is required to saturate red, green, and blue pixels. Colors can be measured using the CIE coordinates that are well known in the art. An example of a green emissive molecule is ginseng (2-phenyl acridine) oxime, denoted Ir(ppy)3' having the structure of formula I:

Μ In this and subsequent figures herein, nitrogen to metal (wherein the coordination bond of (7) is a straight line. The term "organic" as used herein includes polymeric materials that can be used to fabricate organic optoelectronic devices, as well as small molecule organics. Material. "Small molecule" means any organic material that is not a polymer, and in fact "small molecules, can be quite large. In some cases, small molecules can include repeating units. For example, long The molecule in which the alkyl group is a substituent is not excluded from the "small molecule" category. The small molecule is also incorporated into the polymer, for example as a pendant group on the polymer backbone or as part of the backbone. The small molecule can also serve as the core of the dendrimer, which consists of a series of chemical shells built on the core. The core of the dendrimer can be a fluorescent or phosphorescent small molecule emitter. Dendrimers can be &quot;small molecules&quot;, and it is believed that all dendrimers commonly used in the field of OLEDs are small molecules. As used herein, "top" means distance The bottom of the substrate is the farthest, and the bottom means the closest to the substrate. When the first layer is described as &quot;placed on the second layer, the first layer is placed away from the substrate. Unless the first layer and the second layer are specified&quot Contact", otherwise there may be other layers between the first layer and the second layer. For example, even if various organic layers are present in the middle, the cathode can be described as "placed on the anode". As used herein &quot;solution processable&quot; means that it can be dissolved, dispersed or transported in a liquid medium in the form of a solution or suspension and/or deposited from a liquid medium. When it is believed that the ligand contributes to the photosensitivity properties of the emissive material The ligand is referred to as "photosensitive." If the first energy level (HOMO or LUMO) is lower on the conventional energy level diagram, it is considered to be lower than or less than &quot;second energy level , which means that the first energy level will have a negative value to a greater extent than the second energy level. If the first energy level (HOMO or LUMO) is higher on the conventional energy level diagram, it is considered to be &quot Higher than "second energy level, which means that the first energy level will have a higher energy level than the second energy level To a lesser extent, it is a negative value. For example, the HOMO of CBP is -5.32 eV and the HOMO of TPBI is - 5.70 eV, so the HOMO of CBP is higher than the HOMO of TPBI 128110.doc 200901530 0. 38 eV. Ground, the LUMO of mCP is -0.77 eV and the LUMO of CBP is -1.23 eV 'so the LUMO of mCP is higher than the LUMO of CBP" 0.46 eV. Use the Spartan 02 software package available from Wavefunction Inc. of Irvine, California, USA. The above values were determined by performing a density functional calculation at the B3LYP/6-31G* level. The virtual position can be selected for substances containing heavy metals such as Ir(ppy)3. It has been documented in the literature that density functional calculations can qualitatively predict the energy of organic and inorganic compounds. A more detailed description of the above-described 〇Led and definitions can be found in U.S. Patent No. 7,279,7, which is incorporated herein in its entirety by reference. The term "consisting essentially of one or more materials such as coatings applied to an organic light-emitting device" as used herein means that material may be present in addition to those enumerated 'but any such other materials are only Traces (such as impurities) are present and do not significantly affect the electronic properties or emissivity of the device, ie, they do not significantly promote the transport or interception of holes or electrons, which do not cause displacement of the recombination sites and which do not significantly promote or participate in excitons Decay, emission, or other aspects. Unless otherwise indicated, 'the percentage of organic compounds of the various layers described herein is percent by weight. The following two references, including Samuel as co-authors, describe doped emitter layers in direct contact with IT〇 Processable phosphorescent OLED solutions: E.E_ Namdas, TD Anthopoulos, IDW· Samuel,

Applied physics letters 86 , 161 104 (2005) ; T.D

Anthopoulos, M.J. Frampton, Ε·Β·Namdas, P.L. Burn, 1. D.W. Samuel, Adv. Mater. 2004, 16, No. 6, March 18 曰, pp. 557-560. 128110.doc 200901530 SUMMARY OF THE INVENTION In a first aspect of the invention, there is provided an illumination device having an illumination device. The skirt has an emitter layer between the anode and the cathode and the cathode. The emitter layer n·pole first organic layer includes a first phosphorescent material and a concentration of the first photosynthetic material in the first organic layer. The first non-Ο in the first organic layer; Ο JO W, and the concentration of the 0/ _ ^ f material is l〇_9n W". The emissive layer also includes a second organic layer

The second scale light material and the second non-emissive (4) 1 second 2 scale light material have a concentration of 3-25 ♦ and the second layer of the second organic layer: the concentration of the non-emissive material is 75-97 wt %. The concentration of the first dish material in the second organic layer is lower than the concentration of the first light-modulating material in the first organic layer, preferably at least 5 wt%, and more preferably at least 1 wt%. The first emissive material and the second non-emissive material may be the same material or different materials, and the first phosphorescent material and the second disc pure material may be the same material or different materials. Therefore, there are four combinations: (1) the first material in the first and second organic layers is the same, and the non-emissive material is the same in the first and second organic layers; (7) phosphorescence in the first and second organic layers The material is different from the first non-emissive material in the second organic layer; (7) the light-filling material is the same in the first and second organic layers and is different in the first and second organic layers; And (4) the light-emitting material is different in the first and second organic layers' and the non-emissive materials are different in the first and second organic layers. Each combination has its advantages. The first organic layer may consist essentially of the first light-filling material and the first non-emissive material' and the second organic layer may consist essentially of the first-scale light-sensitive material of the first organic layer 110110.doc •10·200901530 And a non-emissive material composition. The device architecture that also mitigates device damage and extends the life of the device is used individually or in combination for the first aspect. The first organic layer, the second organic layer or both may further be a low energy emissive material, wherein the lower energy emissivity is 0.1-12 wt%. The leaf &lt; 瑕 degree is in the second aspect, providing all the organic layers between the structural layer and the anode of the mitigating damage, and the organic layer has the electromigration mobility and the mobility rate so that the The hole mobility is preferably at least ten times greater than the electron mobility, and more preferably at least (10) times greater. ‘, = three-states' provide another framework for mitigating damage. All of the organic layers between the A amines do not include any of the triphenylamines, tetraarylamines, and saliva groups selected from the group consisting of triaryl groups, in the fourth aspect, providing additional damage mitigation. There is no organic layer between the layer and the anode. In the first-organic, in the fifth aspect, a third flaw is provided between the first organic layer and the anode to mitigate damage. ;:: - placed on the first phosphorescent material group ... the second organic layer basic layer and the anode, Μ its # - layer system directly in contact with the first - there is in the sixth aspect of the 'providing damage between Only-layer. No more than 3 different organic ° ', structure. The device includes a minimum. In order to reduce the number of materials damaged to the seventh aspect, scorn #± to mitigate another structure of damage. The apparatus comprises no more than 4 different organic materials of I28J30.doc 200901530, wherein one of the organic materials is an electron transporting material present only between the cathodes of the emissive layer of the device. The limit on the number of materials minimizes the number of materials that are subject to damage. In the eighth aspect, another architecture for mitigating damage is provided. All of the organic layer between the first organic layer and the anode consists essentially of an organometallic material. In the ninth aspect, another architecture for mitigating damage is provided. All of the organic layers between the first organic layer and the anode have a sufficiently large hole conductivity such that the thickness of the layer increases by 1 〇 nm at a current of 10 mA/cm 2 resulting in a voltage rise of 0.1 V or less. In the tenth aspect, another architecture for mitigating damage is provided. The first non-emissive material has a triplet energy of 2.7 eV or more. In an eleventh aspect, a lower energy emissive material that can be used in the first aspect is provided in the presence or absence of various damage mitigation structures. The lower energy emissive material can be a swellable radioactive material, a photoactive material, or both, and σ, in which a plurality of lower energy emissive materials are present. The energy of the lower energy emission &amp; material may be 〇·1 -12 wt%, and the lower energy emissive material may exist only in the first organic layer, only in the second organic layer or exist in two layers in. The organic layer comprising the lower energy emissive material can consist essentially of a luminescent material, a non-emissive material, and a lower energy emissive material. In an eleventh aspect, a device similar to the device of the first aspect is provided, but with a concentration lower than the opposite of the phosphorescent material in which the concentration of the light-sensitive material in the second organic layer is higher than that of the organic layer . The first phosphorescent material in the first organic layer has a ?? degree of 3-25 wt%, and the concentration of the first non-emissive material in the first organic layer is 75-97 wt%. The photo-curable material in the second layer 128H0.doc •12·200901530 has a concentration of 10-90 wt%, and the concentration of the non-emissive material in the second organic layer is 10-90 wt%. Various other aspects as described above can be used in conjunction with the twelfth aspect. In various aspects, the first organic layer can be substantially composed of the first phosphorescent material and the first non-emissive material, and the second organic layer can be substantially composed of the second phosphorescent material of the first organic layer and the second Non-emissive material composition.

ί The total thickness of the 'first and third: organic layers of the various types of towels is preferably at least 400 A. The first organic layer preferably has a thickness of at least 5 Å and the second organic layer preferably has a thickness of at least 50 Å. In various aspects, the first-scale optical material preferably has a highest occupied molecular orbital domain at least 0.3... higher than the highest occupied molecular orbital domain of the first non-emissive material, and the second light-filling material preferably has a ratio The first-occupied molecular orbital of the first-non-emissive material is at least 〇.3...the highest occupied molecular domain. In a variety of aspects, a fourth organic layer disposed between the second organic layer and the cathode can be provided. The fourth organic layer consists essentially of a second non-contact and is in direct contact with the second organic layer. Materials In various aspects, a fourth organic layer disposed in the second organic layer and the cathode may be provided. The fourth organic layer is substantially made of a material having a triplet energy greater than a second light-emitting property: a triplet energy amount of at least .·! eV, and the fourth organic layer is in direct contact with the second organic layer In various aspects, the first non-emissive material may be selected from the group consisting of triphenyl, carbazole, dibenzothiophene, and a group bonded to oxadiazole. In this example, the first organic layer may be in direct contact with the 128110.doc -13 - 200901530. [Embodiment] Generally, the OLED comprises at least an organic layer disposed between the anode and the cathode and electrically connected to the anode and the cathode. When a current is applied, the anode injects a hole into the organic layer and the cathode injects electrons into the organic layer. The injected holes and electrons each migrate toward the oppositely charged electrode. When the electron and the hole are positioned on the same molecule, the formation The position of the excited energy state electron-hole pair &quot;exciton&quot;. When the excitons relax through the light emission mechanism, in some cases, the excitons can be positioned on the excimer or the excited composite object. Non-radiative mechanism Such as thermal relaxation, but is generally considered to be undesirable. As shown in, for example, U.S. Patent No. 4,769,292, the initial 〇LED uses an emissive molecule that emits light from its singlet state (&quot;fluorescent&quot;). Patent cited

The method used is fully incorporated herein. Fluorescence emission typically occurs over a time period of less than 1 nanosecond. In recent years, OLEDs have been demonstrated to have emissive materials from triplet luminescence ("phosphorescence"). Baldo et al., &quot;Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices&quot; » Nature, Vol. 395, 15i_154, 1998, ( &quot;Bddo-r); and (4) et al. 'Very high-efficiency green organic light-emitting devices based on electrophosphorescence&quot;&gt; Appl. Phys. Lett· 'Vol. 75, No. 3, 4-6 ( 1999) (&quot;Baldo-II"), which is incorporated herein in its entirety by reference. Phosphorescence is described in more detail in U.S. Patent No. 7,279,704, lines 5-6, the disclosure of which is incorporated herein by reference. Figure 1 shows an organic light-emitting device 1A. These figures are not necessarily drawn to scale. The device 100 can include a substrate 11 , an anode 15 , a hole injection 128110.doc . 14 - 200901530 layer 120 , a hole transport layer 125 , an electron blocking layer 13 , an emissive layer 135 , a hole The barrier layer 140, an electron transport layer 145, an electron injection layer 150, a protective layer 155, and a cathode 16A. The cathode 16 is a composite cathode having a first conductive layer 162 and a second conductive layer 164. The device 1 can be fabricated by depositing the layers in order. The properties and functions of the various layers, as well as example materials, are described in more detail in U.S. Patent 7,279,704, the disclosure of which is incorporated herein by reference. More examples of each of these layers are available. For example, a flexible and transparent substrate-anode combination is disclosed in U.S. Patent No. 5,844,363, which is incorporated herein in its entirety by reference. An example of a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , which is incorporated herein by reference in its entirety. Examples of emissive and host materials are disclosed in U.S. Patent No. 6,3,3,238, the entire disclosure of which is incorporated herein by reference in its entirety by reference in the the the the The molar ratio of 1 is iBphen, as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated herein in its entirety by reference. Examples of cathodes are disclosed in U.S. Patent Nos. 5,703,436 and 5,707,745, the entire disclosure of which is incorporated herein by reference to the entire entire entire entire entire entire entire entire disclosure disclosure disclosure disclosure disclosure a composite cathode of the layer. The theory and use of the barrier layer is described in more detail in U.S. Patent No. M97,147, and U.S. Patent Application Serial No. 2003/0230980, which is incorporated herein in its entirety by reference. An example of an injection layer is provided in U.S. Patent Application Publication No. 128,110, the entire disclosure of which is incorporated herein by reference. A description of the protective layer can be found in U.S. Patent Application Publication No. 2004/01741, which is incorporated herein in its entirety by reference.

FIG. 2 shows an inverted OLED 200. The device includes a substrate 21, a cathode 215, an emissive layer 220, a hole transport layer 225, and an anode 230. Device 200 can be fabricated by depositing the layers in sequence. Since the most common OLED configuration has a cathode disposed on the anode and the device 2 has a cathode 215 disposed under the anode 230, the device 2 can be referred to as an &quot;inverted&quot; OLED. Materials similar to those described for device 1A can be used in the respective layers of device 200. Figure 2 provides an example of how to omit certain layers from the structure of the device. The simple layered structure illustrated in Figures 1 and 2 is provided by way of non-limiting example and it should be understood that embodiments of the invention may be utilized in conjunction with a wide variety of other structures. In fact, the material-like structure of the material is mechanical, and other materials and structures can be used. The functional OLEDs can be obtained by combining the various layers in different ways depending on design, performance and cost factors or by completely omitting the layers. Other layers not specifically described may also be included. You can use the materials that are described in the &amp; specific descriptions to replace the materials of the Ten Commandments. While many of the examples provided herein describe layers as comprising a single-U n 匕 each early 枓, it should be understood that a mixture such as a host and a dopant may be used or, for example, ★, Japanese &amp; And the combination of ancient materials. Also, the edge layer can have various sublayers. This article is intended to impose strict limits on various layers. For example, it is not considered as an example. In the device 2, 225 transmits a hole and transmits lightning, which is the same as the transmission layer hole transmission layer 2, and can be described as electric/丨Μ The layer or hole is implanted into an &quot;organic layer&quot; between the cathode and the anode in the embodiment of the 〇LED trace 128110.doc -16 - 200901530. The organic layer p 3 monolayer may further comprise, for example, multiple layers of different organic materials as described with respect to Figures 1 and 2 . It is also possible to use materials and structures that are not specifically described, such as 〇led, which is composed of a polymeric village material (PLED) as disclosed in U.S. Patent No. 5,247,19, the disclosure of which is incorporated herein by reference. This article is incorporated herein. As another example, a germanium LED having a single organic layer can be used. For example, 〇 LEDs can be stacked as described in U.S. Patent No. 5,7,7,745, the entire disclosure of which is incorporated herein by reference. The 0 LED structure can be different from the simple layered structure illustrated in FIGS. 1 and 2. For example, the substrate can include a slanted reflective surface to improve the external coupling, such as the mesa structure as described in U.S. Patent No. 6, 〇 91, 195 to F. Rrest et al. and/or, for example, Bulovic et al. A pit structure as described in U.S. Patent No. 5,834,893, the disclosure of which is incorporated herein in its entirety by reference. Any of the various embodiments may be deposited by any suitable method of /V unless otherwise stated. Preferred methods for the organic layer include thermal evaporation, ink jetting (such as those described in U.S. Patent Nos. 6,013,982 and 6,087,196, the entireties of each of each of each of And (as described in US Pat. 'The case is incorporated herein by reference in its entirety. Other suitable deposition methods include spin coating and other substrates in the solution of 128110.doc -17- 200901530. Based on the solution system. For the method of reducing μ 〇 k μ in a nitrogen U inert atmosphere, the method of ° κ includes thermal evaporation. Preferred patterns = include by masking deposition, cold soldering (such as described in U.S. Patent No. </RTI> </RTI> </RTI> </RTI> </RTI> <RTIgt; Figure

Other methods can be used for Pan 3. The material to be deposited can be modified to make it compatible with the 疋 deposition method. For example, a branch or "branch and preferably a substituent such as an alkyl group and an aryl group containing at least 3 carbons may be used in a small molecule to enhance its ability to withstand solution strengthening. It may be used with 20 or more. The multi-stone and the substituent, and 3_2G carbons are preferred. Because (4) the material can have a lower recrystallization tendency, so the material with asymmetric structure may have a better solution than the material with symmetric structure. Processability. Dendrimer substituents can be used to enhance the ability of small molecules to undergo solution processing. Devices made in accordance with embodiments of the present invention can be incorporated into a wide variety of consumer products, including flat panel displays, computer monitors , TV, signage, for internal or external lighting and / or signal transmission lights, head-up display, full transparent display, flexible display, laser printer, telephone, cellular phone, personal digital assistant (PDA), knee Laptop, digital camera, camcorder, viewfinder, microdisplay, vehicle, large-area wall, theater or outdoor stadium screen or standard Various control mechanisms can be used to control the devices made in accordance with the present invention, including passive matrices and active matrices. Many of these devices are intended to be in a temperature range that is comfortable for humans, such as 18 ° C to 30 ° C, and more preferably in the room. Temperature (2 (TC_25 ° C). The materials and structures described herein can be applied to devices other than xenon LEDs. 128110.doc -18- 200901530 For example, such as right Ά another solar cell and organic light The device of the detector can use the materials to use the materials and structures. More generally, organic materials such as organic transistors can use the materials and structures. Terminology, acne , 'Sweeping its is-a- ^ dysprosium, cycloalkyl, alkenyl, alkynyl, aralkylheterocycloalkyl, aromatic and heteroaryl are known in the art and in US 7,279,704 As defined in line 31-32, this patent is incorporated herein by reference. As used herein, the following compounds have the following structures:

B

C

F

128110.doc •19· 200901530

s

Figure 8 shows a general phosphorescent OLED structure. In some aspects, a novel architecture of a phosphorescent OLED is disclosed. Figure 9 shows a simplified device structure incorporating a thick emissive layer (EML) between a hole injection layer (HIL) and a hole blocking layer (BL). It has been confirmed that when the NPD HTL is replaced by the compound B doped layer of the Compound B in the phosphorescent OLED, this makes the novel green phosphorescent OLED have a very long service life. The green device has been shown to have 6 〇〇A Compound B: Compound A 15% EML, an efficiency of 44 cd/A at 1000 nits and an 80% lifetime of 65,000 h, see Table 2, Example 1 compared to Comparative Example 2 . In this device, the 6 Å A compound B: Compound A layer provides electron and hole transport capabilities. Compound B provides a very stable matrix. Compound A is provided as a hole transporting dopant because compound b has a preferential electron transport characteristic. The doped Compound B: Compound A layer can also be used as the HTL of the red and blue structures. Compound B: Compound A is an example of the concept of confirming the doped HTL. Compound a can also be used as a hole injection layer, and compound B can serve as a layer between the emission layer and the electron transport layer (if present) and then the cathode. Certain features disclosed herein can significantly improve the stability of phosphorescent OLEDs. This includes the use of a material (Compound B) which was originally used as a host and which has been confirmed to be an effective BL (barrier layer) and an HTL (hole transport layer). The following references are hereby incorporated by reference in their entirety: Vadim Adamovich &gt; Novel materials and techniques of fabrication for Organic light emitting diodes, PhD, Thesis, published on November 25, 2003, Peter Mackenzie, Vadim Adamovich, Yeh Tung , Michael S. Weaver, EML ON ITO OLED DEVICES 'Provisional Application No. 60/763, 189; U.S. Patent No. 7,022,421; U.S. Patent No. 7,078,113; U.S. Patent Publication No. 2006/0280965 No. 128110.doc • 21 - 200901530 The low stability of CBP body, HPT barrier layer (BL) and NPD hole transport layer (HTL) materials poses significant obstacles to achieving stable and long-life green phosphorescent 〇 LEDs. In green phosphorescent OLEDs, the use of more stable materials such as compound b in the emissive layer, BL and HTL can increase the lifetime of green phosphorescent 0 LED by a factor of about 10. Substituting the NPD HTL for the green device with Compound B doped Compound B significantly improved the life of the device. The 5H concept also applies to blue devices. Compound B is a very stable host material. The green structure and efficacy of Compound B, which is used as a host, barrier layer, and hole transport layer component in various layers within the device, is disclosed. Table 1 shows the device information for improving the stability of green phosphorescent 〇 LEDs. Figure 8 shows a generic device structure showing the various layer structures from Table 1. Table 1: Evolution of green phosphorescent 〇 LED efficacy due to novel materials in the device structure 1 2 3 4 5 6 HIL 100 A Compound A Compound A Compound A Compound A Compound A CuPc HTL 300 A NPD NPD NPD Compound B : Compound A 15% Compound B: Compound A 30% Compound B: Compound A 15% EML 300 A CBP : Compound A 10% Compound B ·· Compound A 10% Compound B: Compound A 15% Compound B: Compound A 15% Compound B: Compound A 15% Compound B: Compound A 15% BL HPT 50 A HPT 50 A Compound B 100 A Compound B 100 A Compound B 100 A Compound B 100 A ETL Alq 450 A Alq 450 A Alq 400 A Alq 400 A Alq 400 A Ala 400 A 1000 nits voltage [V] 5.8 5.7 6.4 7.6 6.4 8.8 Luminous efficiency at 1000 nits [cd/Al 61 59 54.7 44.2 51.8 25.6 EQE at 1000 nits [%] 17.7 16.3 15.3 12.3 14.4 6.9 128110.doc -22- 200901530 Initial illuminance at 40 mA/cm2 [cd/m2l 16155 16840 17300 13714 15666 8229 Ts〇% at 40 mA/cm2 [h] 80 160 185 870 ～900 2000 under 1000 nits T5e%[h]* 25,000 5 5,000 75,000 280,000 &gt;500,000 &gt;600,000

The LT with an increased predicted form is derived from Table 1, and the use of the Compound B stabilizing material as a means of introducing various layers significantly improves the life of the device. Although not intended to be limited by theory, HTL replacement will improve the device. It is believed that this may be important (') for green devices. NPD is not as stable in green devices as in other devices such as red devices. Moreover, without wishing to be bound by theory, it is believed that NPD can be degraded by electron leakage through the emissive layer and/or by phosphorescent excitons. As shown in Table 1, replacing the NPD HTL with a more stable Compound B: Compound A layer increased the life of the device by a factor of four. Compound B transports electrons in the layer including Compound A and Compound B and the Compound A dopant transports holes. Substituting NPD allows the life of the green device to be similar to the lifetime of the red device (&gt;100,000 h). Other materials can be used with the same concept of the doped HTL and can be used for red and blue phosphorescent OLEDs. Other device architectures that may be considered include hierarchical structures in which the HIL is a 100% bismuth dopant (e.g., a compound ruthenium) and subsequently introduced into the host material, e.g., as a host material that appears to be away from the anode. Different concentrations (0-1 00%) of dopants and multiple layers of the body can also be used between the anode and the BL or ETL. The compound ruthenium can also be used as the main body of the red and blue-green emitters. The compound Β can also be used as a red, green, blue or white device or as a BL in any other color device of 128110.doc -23- 200901530. A device having 600 A of Compound B: Compound A layer and Compound B as a blocking agent was formed on different HILs (CuPc, Compound A, and no HIL). Specific device examples of Compound H: Compound A doped HTL are summarized in Table 2. Figure 21 provides the structure of the apparatus described in Table 2. Table 2: Device performance comparison parameters when replacing NPDHTL in the device Example 1 Example 2 Example 3 Example 4 Example 5 Comparison of real stone plant HIL 100 A Compound A CuPc No compound A Compound A Compound A HTL 300 A Compound B : Compound A 15 % Compound B: Compound A 15% Compound B: Compound A 15% Compound B: Compound A 30% Compound B: Compound A 15% NPD EML 300 A Compound B: Compound A 15% Compound B: Compound A 15% Compound B: Compound A 15% Compound B: Compound A 15% CBP: Compound A 10% Compound B: Compound A 15% Cffi "x, yl 0.38 0.59 0.36 0.61 0.36 0.60 0.37 0.60 0.37 0.60 0.38 0.59 Voltage at 1000 nits [V ] 7.6 8.8 8.6 6.4 7.8 6.4 Luminous efficiency at 1000 nits TCd/Al 44.2 25.6 34 51.8 45.8 54.7 EQE at 1000 nits [%] 12.3 6.9 9.3 14.39 12.78 15.3 at 70 ° C, 1000 nits T90% 『hi 625 900 482 293 initial illumination at 40 mAa/cm2 [cd/m2l 13714 8229 9434 15666 13697 17300 Tso% at 40 mA/cm2 [h] 870 2000 1200 ~900 -460 185 at 1000 ney Special Ding Brain [h]* 65,000 140,000 &gt; 150,000 98,000 &gt; 15,000 T50% under 1000 nits [h]* 280,000 &gt;600,000 &gt;500,000 &gt;400,000 &gt;75,000

*-Increased form of LT The stabilized doped HTL (Compound B: Compound A) replaces NPD to cause green 128110.doc -24- 200901530 The color device lifetime is significantly improved. The experimental results are shown in Tables 1 and 2 and related figures. A device having a 600 Α compound Β: compound A 15% layer (due to the electron transport and hole transport capability of the material mixture) was generated on each HIL (CuPc, compound a, and no HIL) (Example 2 of Table 2, respectively) , 1 and 3). Will have 300 A NPD HTL and 300 A Compound B: Compound A 1 5 ° /. The same device structure of EML is shown in a comparative example. Devices without NPD are much more stable than devices with npd HTL. The compound B host (matrix) and compound A (hole transport and emissive dopant) are used in one layer in the device η. The superior performance and best efficacy of the devices measured in the specific experiments shown in Table 2 (long lifespan and helium device efficiency and low operating voltage) are Example 5 of Table 2. The structure of Example 5 is shown in Figure 9. The device has only three organic materials. The device's HIL·, EML, and BL can be considered to have a near 〇 (hole/primary interface) of 1% for compound A and close to Alq ETL (electronic note)

Incoming interface) is a 100% compound B fractionated concentration of Compound A: Compound B Layer 0 The devices of Tables 1 and 2 illustrate several points associated with superior device performance. J uses ', &amp; doped HTL (stabilized matrix (not necessarily for hole transport) and hole transport dopant) (may also be ETL); 〇HTL and emissive layer use the same material (body and dopant) Xiao; the same material (such as compound A) as the emissive phosphorescent green broadcast / W and hole transport dopant and hole injection layer; : use the same material (such as compound 3) as the main body in the reading, Musculosity, only as a barrier in the device; 1281I0.doc -25- 200901530 〇 Only three materials in the device (eg compound a, compound β, Alq); ° still stable green phosphorescent structure (in 1000 nits) More than 300,000 hours of use). Furthermore, device architectures having the following advantageous architectures are disclosed, which can be used individually or in combination:

A stable tribo compound such as a compound B 1. a triphenyl compound is used as a main body of PHOLBD. 2. A triphenyl compound is used as a barrier or barrier layer in a PHOLED. 3 _ Coextruded diphenyl compounds act as the main body and barrier layer in the same OLED. 4. Coexisting triphenyl compounds as the main body and HTL component in the same OLED. 5 · The two-block compound is used as the HTL component and barrier layer in the same OLED. 6. A biphenyl compound is used as the HTL component, body and barrier layer in the same device (for example, a three component device). 7. Architectures 1-6 'with or without an electron transport layer. 8. Schemes 1-7, using Compound B as the specific co-triphenyl compound. 9. The above structures 1-7, but using a carbazole compound instead of a terphenyl compound as a stabilizing substance. 10. Architecture 9, using mCBP or compound ruler as the specific carbazole compound. A device can be made using a stable host material that is a two-component compound or a leaf-spray compound. Such devices may include only three or only two organic components, and may include layers of the same material having different concentrations. Table 3 shows examples of such devices. The structure of the apparatus of Table 3 is shown in Figure 8. Indicating that htl 128110.doc •26-200901530 and ETL in Figure 8 are slightly flexible, it is believed that in many structures, especially in the structure where the HTL and ETL have the same material but different concentrations, the two layers are emission. Devices 3 and 2 of Table 3 were actually fabricated, while devices 3 and 4 were not manufactured, but devices 3 and 4 were still included for illustrative purposes. It is believed that the compound s is an example of a smectic molecule which can transport electrons in the emissive layer. Table 3: Examples of &quot;3 components&quot; &&quot;2component&quot; phosphorescent OLED structures based on different concentrations of the same material in different layers. HIL HTL EML BL~ ETL 1 AB: A (30 %) B _2 Γ A CBP: A (30%) CBPrAriO%) R --- 4 1 A NPD R: A (30%) NPD r R: Ag〇%) NPD: S05%) R * ' 1 1 1 Vi / ..Aiq (if any) Alq (if available) These devices are used in flat panel displays and lighting applications. The proven superior device has the advantage of a longer lifetime in high efficiency phosphorescent OLEDs. Special manufacturing equipment is not required and the apparatus can be manufactured by methods known in the art. The shadow mask method is considered in the case where the visible shared layer can be used for parallel RGB applications. 3 shows an organic light-emitting device having first and second organic layers having different concentrations of phosphorescent material and non-emissive material, and the organic layer between the first organic layer and the anode has specific charge carrier migration Rate characteristics. For example, the device of FIG. 3 includes a substrate 310, an anode 315, a third organic layer 320, an emission layer having a first organic layer 330 and a second organic layer 340, and a hole blocking layer 35, An electron transport layer 36 and a cathode 370. Hole blocking layer 350 and electron transport layer 360 are optional. As is common to many devices, the device of Figure 3 and the various other devices shown herein have a cathode having an anode substrate adjacent to the substrate. But such devices may also have proximity to

The first-organic layer 330 is disposed between the anode and the cathode and is provided with a material and a non-emissive material. The concentration of the light-emitting material in the first-organic layer is 10-90 Wt%. The concentration of the non-emissive material in the organic layer is 〇 wt%. The second organic layer 340 is disposed between the first organic layer and the cathode. The second organic layer 340 is preferably in direct contact with the first organic layer ❹, but a thin organic layer capable of passing through the holes and the hole may exist between the first organic layer 330 and the second organic layer 34 。. The second organic layer also comprises (4) a light material and a non-emissive material. The concentration of the phosphorescent material in the second layer is 3_25 (four). The concentration of the non-emissive material in the second organic layer is 75_97 wt%. The second layer has phosphorescence. The concentration of the material is lower than the concentration of the phosphorescent material in the first organic layer. Since the phosphorescent material in the first organic layer 330 and the second organic layer 34{) have different concentrations, there is a &quot;interface between the layers &quot; In one aspect, the first organic layer 330 and the second organic layer 340 comprise only a light-emitting material and a non-emissive material. The number of materials is minimized to simplify manufacturing and avoid failures that may be associated with other materials. The mechanism is therefore advantageous. b Figure 3 and other figures show organic layers including &quot;phosphorescent&quot; materials and &quot;non-emissive&quot; materials. As used herein, &quot;phosphorescent&quot; materials are at room temperature (e.g. About ^25 °Cf) can be self-excited Light-emitting material. However, any given phosphorescent material may or may not emit light in a particular layer or in a particular device. Many of the architectural materials disclosed herein have a light-emitting material. However, in other architectures, The light-filling material does not illuminate, but instead transfers excitons 128110.doc 28- 200901530 r ^ Other molecules that can be phosphorescent or fluorescent, the spheroidal properties of the subsequent materials in these devices are in these devices Still functioning, because the ability to emit light from a double-excited state at the factory is related to other characteristics such as intersystem crossing and strong spin-orbit coupling, although it cannot emit light, it can be effectively formed on the molecule and transferred. To other molecules. Here, the multi-scale material is also a good hole transporter. It is believed that the term &quot;phosphorescence, as defined in this application, is generally in line with its skill in the art but is not intended to be extended. Others that the term can be used in different ways, such as the non-emissive" materials used herein, do not emit light in devices that describe the material as "non-emissive". However, non-emissive in the device The material is not electrically inert and may generally be associated with charge transport, most related to electron transport. In other cases, the material may be emissive, such as in solution or in other devices. In general, radioactivity The material can emit light in addition to the device comprising it as a non-emissive material, in which the solid state factor causes the material to not be present in the device. For example, a "non-emissive" material can have a lower A non-emissive material having a triplet energy of at least the triplet energy of at least eV is miscellaneous so that any triplet optical material formed on the non-emissive material does not emit light. The primary phosphorus is not subject to any aspect of the invention. The theory of how the sample works is limited to many pure phosphorus _, recombination occurs at the interface of the device or close to 'because the electron and hole mobility on both sides of the interface may be different, and because electrons and holes may be difficult to penetrate the interface . If the emissive layer does not include any of the internal interfaces, the recombination is likely to occur at or near the interface between the emissive layer and the non-emissive layer. Therefore, excitons and two types of charge carriers are located in the vicinity of the non-emissive layer at an effective concentration. In the case where the non-emissive layer is susceptible to damage from excitons and/or electrical carriers, the use of the device may be adversely affected. In addition, the proximity of the non-emissive layer to the recombination region provides a non-radiative decay path for the excitons, which adversely affects device efficiency. It is further believed that in many phosphorescent devices, the phosphorescent material is responsible for transporting holes in the emissive layer and the non-emissive host material is responsible for transporting electrons. It is believed that a change in the concentration of the phosphorescent material between the first organic layer 33A and the second organic layer 34〇 may result in a higher mobility of electrons in the first organic layer 33〇 than in the first organic layer 340. The rate, and the hole in the second organic layer. The mobility in the middle is higher than the mobility in the first organic layer 330. Therefore, recombination of electrons and holes can occur on or near the η plane between the first organic layer 33〇 and the second organic layer 34〇. The concentration of the phosphorescent material in the second organic layer 34 is preferably at least 5 correction % lower than the concentration in the first organic layer 330, and more preferably as low as v 10 wt/〇. In summary, the first organic layer 33 and the second organic layer 34 can form an emissive layer of the device. Since recombination occurs at or near the interface between the first organic layer 33A and the second organic layer 340, i.e., at the interface within the emissive layer, problems caused by recombination of the nearby interface and the non-emissive layer can be avoided. The inferences described in these paragraphs apply to the various devices described herein having an emissive layer having an internal interface (i.e., an interface between the first organic layer and the second organic layer). The phosphor materials of the first organic layer 330 and the second organic layer 34 may be the same material or may be different phosphorescent materials. The non-emissive material of the first organic layer 33 and the second organic layer 12810.doc -30- 200901530 layer 340 may be the same material or different materials. Therefore, there are four combinations: (1) the phosphorescent material is the same in the first and second organic layers, and the non-emissive material is the same in the first and second organic layers; (2) in the first and second organic The phosphorescent material in the layer is different and is the same as the non-emissive material in the first and second organic layers; (3) the phosphorescent material is the same in the first and second organic layers, and is in the first and second organic layers The non-emissive materials are different; and (4) the phosphorescent materials are different in the first and second organic layers, and the non-emissive materials in the first and second organic layers are different. Each combination has its advantages. The use of the same non-emissive material in the first organic layer 330 and the second organic layer 34 is simplified by reducing the number of materials in the device. In addition, the use of the same material in multiple layers reduces the failure mechanism because each novel material may introduce a novel failure mechanism. The use of the same non-emissive material can also aid in unwinding the reconstituted area of the device, which also helps to achieve a longer device life, while also providing an interface between the first organic layer 33〇 and the second organic layer 34〇. Recombination occurs nearby by adjusting the concentration of the non-emissive material at the interface. However, it is also advantageous to use different non-emissive materials in the first organic layer 330 and the second organic layer 340. *The same material can have *the same charge transfer characteristic ^. In the case where the non-emissive material is primarily responsible for transporting specific charge carriers, the most common case is electrons, the use of different non-emissive materials in the first organic layer 33 () and the second organic layer may occur in the device. The reorganization is easy to control, and different non-emissive materials are selected for the first organic layer 330 and the second organic layer 34, and the electric load can be easily generated in the vicinity of the interface between the first organic layer 330 and the second organic layer 340. The flow gradient, because the difference in the non-emissive material aspect 128110.doc -31 - 200901530 can be used for this purpose unless the steepness of the material is emitted. The use of the same scale light material (but different concentrations) in the first organic layer 330 and the second organic layer 340 has a plurality of the same advantages as described above with respect to the use of the same non-emissive material. Less material can mean fewer failure mechanisms. Different concentrations may cause recombination to occur in the vicinity of the interface between the first organic layer 33A and the second organic layer 340, while the same phosphorescent material may be used to make the recombination region relatively wide. The use of different phosphorescent materials (different concentrations) in the first organic layer 330 and the second organic layer 340 has a plurality of the same advantages as described above with respect to the use of different non-emissive materials. Using different materials increases the additional parameters that can be used to control recombination. Furthermore, the phosphorescent material may or may not emit light in the device. In the case where high-efficiency saturated emission is required, or (d) in the use of a display device requiring fresh emission, it is preferable to use the same light-filling material as the first organic layer 33〇 and the second organic layer 34〇. Emissive material. Other materials that are described in the &quot;lower energy&quot; material may be added to the first organic layer and the second organic layer 340 and illuminate in a group in which the scalar material transfers charge but does not emit. &quot;Low energy means that the lower the energy of the chrome is lower. The peak of the emission spectrum of the Dong emissive material is at least 20 nm higher than the peak of the phosphorescent material in the same layer. The longer wavelength corresponds to the lower energy phase. Excitons can exist through a variety of mechanisms in which lower-energy emissive materials stand up again, and ice is not acceptable to limit the way excitons reach lower-energy emissive materials. For example, J and s, excitons can be formed on a phosphorescent material; and transferred to a lower energy emissive + bismuth material, or excitons can be formed directly on a lower energy emissive material. — ^ 'In the configuration' lower energy emissivity 128110.doc •32- 200901530 The material can be a glory material that accepts excitons from a photometric material, including excitons formed on a photo-material in a triplet state. η i. , , , : In the case of a less-saturated emission, perhaps for t-color emission for general illumination purposes, 'may need to have multiple molecules in the same device, for this purpose, different phosphorescent materials are available The emitters of the layers are used in the first organic layer 33 and the first organic layer 340 such that a plurality of emissive materials are present in the device. Inserted as "lower energy, other materials of the material may also be added to one or both of the first-organic layer 330 and the second organic layer 340: in the case where emission from a plurality of materials is required, Different lower energy emissive materials are used in the first organic layer 330 and the second organic layer 34, or a lower energy emissive material may be used in one of the first organic layer 330 and the second organic layer 340 (4) the lenticular material is emitted from the other of the first organic layer 330 and the second organic layer 34. However, it has an emissive layer (having a first organic layer and a second organic layer, in the first organic layer and The device having an interface between the second organic layers may still have a short life span. It is believed that the main failure mechanism in the X-ray organic light-emitting device includes electrons passing from the cathode through the emission layer to the organic layer on the anode side of the emission layer. It is believed that many of the organic materials used on the anode side of the coffee maker are susceptible to damage by such electrons. Figure 44.5〇 and related texts show the role of the universal hole transport material NPD in shortening the life of the device. Layer 33 and The organic layer of the emissive layer can help to cause recombination to occur at the interface within the emissive layer. Thus 'the number of excitons reaching the non-emissive layer and the charge carriers passing through the entire emissive layer to the other side can be reduced ( That is, the number of electrons reaching the anode side of the emissive layer and the 128110.doc -33. 200901530 hole reaching the cathode side of the emissive layer. However, it is advantageous to adversely affect the device layer described in the structure s The service life of the device. According to the chapter: the system consists of electrons passing through the emissive layer to reach the anode of the emissive layer and harming the adjacent non-emissive layer. Second, the organic material on the anode side of the emissive layer is damaged: The method of shortening the life of the device is such that the hole mobility on the anode side of the emissive layer is significantly higher than the electron mobility I so that most of the charge carriers in the layer have a type = : 3, the third organic layer 32 Located on the anode side of the emissive layer (ie, the first organic layer and/or the first organic layer 340). In the third organic layer 3 = more than one organic layer may be present. The organic layer between the emissive layer and the anode may be Including single-organic materials A variety of organic materials. For a single material layer, this means that each layer of material has a significantly higher mobility than the electron mobility of the layer. For a layer comprising multiple materials, this means the hole mobility of the layer. Significantly higher than the electron mobility of the layer. The hole mobility of the layer is strongly related to the hole mobility of the layer of material responsible for transporting holes in the layer, especially in the case of significant amounts of the material. In the case of electricity, the electric 2 hole mobility can be measured by various methods including time-of-flight, dark current injection and admittance light 4. It is significantly higher than the mobility of the hole is at least twice the electron mobility. Preferably, the electron mobility is at least ten times, and optimally at least 100 times the electron mobility. NPD is conventionally used for the hole transport layer (htl) and is usually in contact with the fox. However, 'So et al. report that the NPD has Similar to its hole mobility, the electricity is 128110.doc •34- 200901530 sub-mobility (~5xl〇-4 cm2 V-丨s.1). See, So et al,, Bipolar

Carrier Transport in Organic Small Molecules for OLED, Proceedings of the Society f〇r Information Display, 38, 1497 (2007). This indicates that electrons can be easily transmitted by npd in the conventional structure. This enables two potential adverse conditions. First, electrons and holes can be recombined in the NPD. The NPD may be a stable hole transport layer, but it is expected that the device exhibiting NPD emissions is operationally unstable because the transmission is not valid for this purpose and the NPD is not included in the device. For example, Figure 38 shows a device with NPD and BAlq emissions. When the device is driven at a constant current of 2 mA/cm2, the lifespan (LT5 〇) of the device shown in Fig. 43 is less than 300 hours. For comparison, a similar device with only Alq emissions (see Figure 44) has a much longer lifespan. After 3 hours and for a continuous drive current of 4 〇 mA/cm, the illumination of the Alq emitter was reduced to approximately 86% of its initial value (see Figure 49). Second, NPD has sufficient evidence that electrons can be unstable in nature. It is believed that NpD is only stable in the hole device; however, its stability to electrons is not determined. In a preferred embodiment, the third organic layer 32 is a single-organic layer disposed between the first organic layer 330 and the anode 315, that is, the third organic layer 32 is directly in contact with the first organic layer 33. () and anode 315. Also in this preferred embodiment, the first organic layer 320 includes only the phosphorescent material of the first organic layer 330. Typically, σ, electrons are present in the emissive layer of the device, and the emissive material in the emissive layer is exposed to the electrons. Therefore, most of the luminescent emitter molecules used in devices having a phase of use have resistance to phase σ from electrons. Because of &amp;, use the first organic layer coffee and other functions 128110.doc -35- 200901530 The second organic layer 340 phosphorescent material 0 day 1 f for the horse - the organic layer 330 盥阳 engage 315 between the only The bungee of the machine causes the failure mechanism associated with the electric moon to be avoided in the device. (4) The damage of the organic layer on the anode side of the shot layer is prevented from being damaged by the organic material of the anode side of the emissive layer, and the other end of the period is shortened, and it is easy to incinerate the anode 彳f of the layer from the electrons. Mouth, shell material. It is believed that many of the materials used in the extreme side of the emission layer are examples of such materials. More ^, and to 6 hai sleeves °_ is D, the material that can be advantageously avoided on the anode side of the emissive layer includes molecules with a #, and a group from the following list · Trigonal tertamine, naphthyl , N (N-carbazole). Another method of avoiding the damage caused by the organic material on the anode side of the electron-damaging emission layer and the shortening of the use period, and having high hole conduction. The material of the rate. Gulei uses the (four) conductivity on the anode side of the emissive layer to inject the emitter at a rate sufficient to minimize the number of electrons on the anode side of the spent emissive layer. The measurable amount is a voltage increase caused by making the enamel layer thicker in the sputum. In particular, a device having the same aspect except for one difference can be manufactured, and the device has a device for measuring conductivity. The particular layer, which has different thicknesses in different devices. Because the device is otherwise identical, the voltage difference caused by the increase in the thickness of the particular layer can be attributed to the interface and layer used to measure the conductivity. Various interfaces and layers Pressure difference separation. In particular, the measurement is performed in a hole conductivity device to measure 'the layers of different thicknesses are in 128110.doc • 36- 200901530. The other thin layer electrons according to the device cannot be reached in large quantities in the device. And the hole is the location of the main charge carriers. Parameters such as carrier mobility that affect conductivity can be a function of current, although it is believed to have a slight dependence. To control this factor, at a particular current density Measurements were made. i 〇 mA/cm 2 is the appropriate current density for the measurements described herein. The hole conductivity of the NPD has been measured in this way and it has been confirmed that for a current of 1 〇 mA/cm 2 , the thickness of the NPD For every 1 〇 nm increase, the voltage across the device is increased by 66 V. The hole conductivity of LG101tm (available from K〇reaiLG) is measured in a similar manner and confirmed at a current of 1 mA/cm2, [ (1)... For every 10 nm increase in thickness, the voltage across the device increases by less than v5 v. These measurements can be repeated by a wide variety of device configurations. There is only a layer thickness between the emitter layer and the anode. The voltage rises 〇1 v or below The layered device may advantageously minimize damage to the organic layer on the anode side of the emissive layer. The LG101 layer is an example of this layer. Avoid damage and use caused by electron damage to the organic material on the anode side of the emissive layer. Another method of shortening the duration is to use only organometallic materials on the anode side of the emissive layer. It is believed that organometallic materials (especially known in organic light-emitting devices) are known to be compatible with certain materials such as NPDs that are commonly used in hole transport layers. The organometallic material used as a phosphorescent emitter is generally more resistant to damage from electrons. Of course, the organometallic material used as an emitter in the emissive layer of the device is exposed to an environment in which electrons are relatively enriched. The use of such materials in the anodes where the electronics of the device are relatively poor does not cause (iv) electronic damage. In addition, many organic materials used as emitters in organic light-emitting devices are good hole transporters, and it is believed that in many cases, they are responsible for the holes in the emissive layer of the organic device 128110.doc •37-200901530 transmission. Avoiding the organic material damage caused by the electron damage on the anode side of the emissive layer and the shortening of the service life, the first non-emissive organic layer of the non-emissive material is not the (4) green material (that is, the first organic high triplet state) The energy material. According to the light handle, the mechanism can include reaching the emission layer. .tI w is the triplet state of the organic material on the anode side of the emissive emissive layer. In the case of a device having an interface within the emissive layer, it is believed that recombination (i.e., exciton formation, including triplet formation) is emitted on or near the surface. The phase U depending on the various materials in the emissive layer is present in the non-emissive (four) and phosphorescent materials. The selection of a high triplet energy reading material for the non-emissive material of the first organic layer reduces the number of triplet states that can be formed on the non-emissive material and/or transferred from the material to the non-emissive material. In addition, it will be extremely advantageous to transfer any triplet present in the non-emissive material to other molecules in the emissive layer of lower triplet energy. Since the first layer is in the emissive layer but on the anode side, the concentration of the collimating material is higher than that of the second organic layer 'providing that the triplet state can be transferred from the non-emissive material of the first organic layer to more of them. point. Therefore, the use of a high triplet energy material for the first non-emissive material reduces the number of excitons reaching the anode side of the emissive layer. In this regard, the "high" triplet energy material is a material having a triplet energy of 27 ev or more. Another method of obtaining a high device lifetime is to use a non-emissive material for the first organic layer. a group of groups consisting of triphenyl, carbazole, quinoline metal, dibenzothiophene, and dibenzothiophene coupled with carbazole 128110.doc -38 · 200901530. When and avoiding damage to the emissive layer by electrons These materials are most useful when combined with other methods of damage caused by the organic material on the anode side and shortened service life. For blue light-emitting phosphorescent devices, there is a peak wavelength between 0 nm and 500 nm. The device for emitting spectral phosphorescent materials and δ 'device lifetime is a particularly important problem. This is because blue photons are the most energy photons in the visible spectrum, so blue-emitting organic molecules generally have higher triplet states. And/or singlet energy. Therefore, many materials in the blue light-emitting device can be exposed to higher energy excitons and/or charge carriers than other devices. It is also possible to limit the effective use of materials in a color device by constraining specific characteristics associated with the highest occupied molecular orbital, the lowest (four) molecular orbital, energy band gap, etc., to ensure normal charge transport in the device. Choice, however, may be more relaxed for the device that emits lower energy photons; because the choice of materials for the blue device is limited, so in a more desirable material for emitting green or red devices - some may not be A viable option for blue illuminators. For green illuminators, ie devices with phosphorescent materials with emission spectra with peak wavelengths between 5〇〇11111 and 53〇nm2, the lifetime of the device is also important: for blue Some of the same problems described in the apparatus are applicable to green devices, but are less suitable. Therefore, for devices having such wavelengths, especially blue, a variety of features described herein are particularly desirable. Preferably, the first organic layer 33 and the second organic layer 34 have a total thickness of at least 4 〇A, and the thickness of the first organic layer 33〇 is at least 5〇A and the thickness of the second organic 1281I0.doc •39·200901530 layer 340 is at least 5〇A. At the thicknesses, the first organic layer 33〇 And the total thickness of the second organic layer 34G is sufficiently large to allow a wide (four) region. The minimum thickness of each layer also means the interface between the first organic layer and the second organic layer 34〇 (many recombinations may occur under or in the vicinity thereof) ) at least 50 A from other layers that may contain other materials. Therefore, ότ limits 丄μ u to reduce the lifetime of any device caused by such other materials.

The k-ray photon material has a highest occupied molecular orbital domain that is at least 0.3 eV higher than the highest occupied molecular orbital domain of the non-emissive material. Therefore, the hole transport in the first organic layer 330 and the second organic layer 34G may mainly occur on the phosphorescent material. Therefore, the phosphorescence between the first layer 33〇 and the second layer 34〇 may cause a significant difference in the transmission characteristics of the two layers, so that recombination occurs on the interface between the two layers or nearby. When the hole blocking layer 35 is present, there are several preferred material choices for the layer. Without intending to be bound by any theory as to why the aspect of the invention operates, the purpose of the hole-resisting layer 35 is to prevent the hole from being moved from the second organic layer 34 to the hole barrier 35Q. The hole barrier state is disposed between the second organic layer 34 and the cathode and is in direct contact with the second organic layer 340. Layer 350 can also be referred to as &quot;fourth, organic layer. One method of preventing holes from moving to the hole blocking layer 350 is to use a non-emissive material of the first organic layer 33 and the second organic layer 34 for the hole blocking layer 350. Because the phosphorescent material of the first organic layer 330 and the second organic layer 340 is not present in the hole blocking layer, and the material is responsible for transmitting holes in the first organic layer 330 and the first organic layer 34, The hole may not enter the hole blocking layer 350. As noted above, this is especially true where the phosphorescent material has a higher occupied molecular layer 350 than the non-emitting 128110.doc •40·200901530 orbital domain. This particular non-emissive material needs to be used in the hole barrier layer for several reasons. First, the material is already present in the first organic layer @ and the first organic layer 340, and thus in the hole barrier layer 3 =. This material (4) introduces any similarity, ', human, according to many devices, the non-emissive property of the emission layer is responsible for transmitting electrons in the emission layer, so that there is no transmission from the cathode side of the emission layer by r, widely The problem of electrons and injection into the emissive layer: In addition, manufacturing is achieved by keeping the number of different materials to a minimum. Preferably, the hole blocking layer includes only the non-emissive material of the first-organic layer 33 and the second organic layer 340, and may have a property of not affecting the enthalpy. However, other materials may be used for the hole blocking layer 3, 50 such as ▲ a material having a highest occupied molecular domain of at least 0.3 eV than the highest occupied knife track of the second organic layer 34. Layer 350 can also be used to block excitons from leaving second organic layer 34. Preferably, layer 350 includes only materials having a triplet energy that is at least ο"eV higher than the triplet energy of the emissive dopant. Another method of avoiding damage caused by electron damage to the organic material on the anode side of the emissive layer and shortening the lifespan is to simply avoid the use of any organic material on the anode side of the emissive layer. 4 shows an organic light-emitting device having an emissive layer having first and second organic layers, the first organic layer and the second organic layer having different concentrations of phosphorescent material and non-emissive material, and the device includes a The substrate 410, an anode 415, and no organic layer between the first organic layer and the anode. By way of illustration, FIG. 4 has a first organic layer 128110.doc 200901530 430 and an emitter layer of a second organic layer 44G, a hole barrier layer 450, an electron transport layer 460, and a cathode 47A. The hole barrier layer and the electron transport layer 460 are optional. The first organic layer 430 is disposed between the anode and the cathode and includes a scale material and a non-emissive material. The concentration of the first organic layer-like material is

The concentration of the non-emissive material in the Wt/〇 organic layer is 10-90 Wt%. The second organic layer 440 is disposed between the first organic layer and the cathode and is in direct contact with the first organic layer 43A. The second organic layer includes the first organic layer (4) and the dendritic material H (iv). The concentration of the optical material is 3·25 wt%. The concentration of the non-emissive material in the second organic layer is 75 97 wt/〇. The concentration of the phosphorescent material in the first organic layer is lower than the concentration of the phosphorescent material in the first organic layer. In one aspect, the first organic layer 43A and the second organic layer 44G include only a light-transmitting material and a non-emissive material. The device of Figure 4 relies on a combination of features of a device that achieves a long life. Because of the problems caused by the anode-emissive layer interface and especially by recombination at or near the interface, simply avoiding the use of any organic layer between the anode and the emissive layer is unlikely to result in a good device. However, the apparatus of Figure 4 also includes different layers of phosphorescent emissive dopants having different concentrations. As shown in the apparatus of FIG. 3, it is believed that a change in the concentration of the phosphorescent material between the first organic layer 43A and the second organic layer 44A (the interface is created in the emissive layer) may cause migration of electrons in the first organic layer 430. The rate is higher than the mobility in the second organic layer 44, and the mobility of the holes in the second organic layer 440 is higher than that in the first organic layer 43. Therefore, recombination of electrons and holes can occur at or near the interface between the first organic layer 430 and the second organic layer 44A. Thus, Figure 4 128110.doc • 42· 200901530 The device of Figure 4, which was already present in the first layer of the emitter layer in contact with the anode, also avoids the possibility that it may already exist between the electron-damping emissive layer and the anode of the prior device. Problems caused by organic materials because the device of Figure 4 does not have any such organic materials that would be damaged by electrons. Figure 5 shows an organic light-emitting device with only two kinds of organic materials. For example, the device of FIG. 5 includes a substrate 510, an anode 515, a third organic layer 520, an emission layer having a first organic layer 53A and a second organic layer 54, and a hole blocking barrier. 570 〇 5 〇, - electron transport layer 56. And a cathode The organic layer 530 is disposed between the anode and the cathode and includes a spheroidal material and a non-emissive material. The concentration of the luminescent material in the first organic layer is %. The concentration of the non-emissive material in the organic layer is 10-90 Wt%. The second organic layer 540 is disposed between the first organic layer and the cathode and is in direct contact with the first organic layer 53A. The second organic layer includes a phosphorescent material of the first f and a non-emissive material. The lightness of the calendering material in the second layer is 3 25 wt/〇. The concentration of the non-emissive material in the organic layer is 75-97 wt%. The concentration of the luminescent material in the second organic layer is lower than the thickness of the phosphorescent material in the first layer. The first organic layer 53 and the second layer include only a phosphorescent material and a non-emissive material. θ The first organic layer 520 includes only the first organic layer 53. The scale material is in direct contact with the first organic layer 53A. The neutral material in the third organic layer (10) is practically incapable of emitting 'and can be used to transfer holes from the anode 515 and inject holes into the first organic layer 530. I28JJ0.doc -43- 200901530 The hole blocking layer 550 includes only the non-emissive material of the first organic layer 530. Without being bound by any theory as to how the aspect of the invention operates, it is believed that the hole transport in the first layer 530 and the second layer 54 is occurring on the phosphorescent material and that the transmission is not non-emissive. Occurs on the material. Therefore, the hole blocking layer 550 cannot transmit holes from the second organic layer 54 and it functions as a hole blocking layer. Therefore, there are only two organic materials used between the third organic layer 52, the first organic layer 53, the second organic layer 540, and the third organic layer 55 (). The third organic material of the device of Fig. 5 is an electron transporting material which is present as the sole material in the electron transport layer 560. Although many of the devices described herein have various layers in the aspect of the invention that may or may not exist, the sounds illustrated in Figure 5 are intended to have exactly the layers shown (no increase and no omission) ), and includes two organic materials. As a result, damage mechanisms associated with additional layers and additional material 枓 can be avoided. The material is the emissive material of the device in a different aspect, as shown in Figure 5, ☆, including the fourth organic material, the method of changing the organic material is the same: the device is only Includes 4 organic materials' and electronic transmission materials. This; the emissive layer between the emissive layer and the cathode in the device, and the organic material present in the device and/or the barrier layer +. For example, the S-hole transmission and the hole injection example are two different phosphorescent materials and two single-disc optical materials included in the emission layer and two (four)= materials, which are emitted in the emission layer. Materials, or phosphorescent materials 128110.doc -44 - 200901530 Materials, non-emissive materials and lower energy emissive materials. Figure 6 shows an organic light-emitting device similar to the organic light-emitting device of Figure 3, but which includes a plurality of scale-sensitive materials. By way of illustration, the apparatus of FIG. 6 includes a substrate 610, an anode 615, a third organic layer 62, an emission layer having a first organic layer 630 and a second organic layer 64, a hole resistance _ (four), - an electron transport layer _ and a cathode 67 〇. The third organic layer 62, the hole blocking layer 650, and the electron transport layer 660 are optional. The first organic layer 630 is disposed between the anode and the cathode and includes a first scale light material and a non-emissive material. The 7-degree of the first phosphorescent material in the first-organic layer is 3 to 50 wt%. First right, she is outside the squad. The concentration of organic layer + non-emissive material is the heart. The second organic layer 6 is placed on the first organic layer and the cathode = two and is in direct contact with the first organic layer (four). The second organic layer state includes a first-organic layer H-light material and a non-emissive material. The concentration of the first-filling property (4) in the second layer is 3·25 A1. The organic layer is non-facilitated: the concentration of the raw material is 10-9. Wt%e in the second organic layer

The concentration of the V material is lower than the concentration of the phosphorescent material in the first organic layer. The first organic layer 630, the second organic layer 64Q, or both are included in the lower energy emissive material. The lower energy emits a light-emitting material. Under the lower energy emissive material, the cleavage exhibits a phosphorescent-sensitive fluorescent emission, i.e., energy can be emitted from the first-phosphorescent material. &lt; Two (four) transfer to the fluorescent emission of the first organic layer 630 and the second organic layer ^ ^ . ^ , JJ 匕 〇 1 1 1 wt wt wt wt wt wt wt wt wt 1 1 1 1 1 1 1 1 1 1 1 1 1 1 An organic layer 128110.doc • 45· 200901530 630 may comprise a lower energy emissive material present at a concentration of o.1·12 wt%, while the second organic layer 64〇 does not include a lower energy emissive material. Or only the first-organic layer 640 may comprise a (U.12 wt% concentration present in the lower 妒 = radioactive material, while the first organic layer 63. does not include lower energy emission: r \ \ in the - state sample towel The 'th-money layer (4) includes only the first-phosphorescent material and the non-emissive material, and the second organic layer includes only the first-light-emitting material, the non-emissive material, and the lower-energy emitting material. Since the sum of the percentages of all materials in any given layer = 〇%, the concentration of the non-emissive material in the first organic layer is 50-97 Wt%, and the concentration of the non-emissive material in the second organic layer is 63- 90 wt%. Both the squama light material and the lower energy emissive material can be emitted in the apparatus of Figure 6. For example, if the first phosphorescent material is the only emission present in the first 'machine layer 630' a material that can be emitted from the layer. If the first-phosphorus (four) and the lower energy (four) (four) are both present in the second organic layer M, the lower energy emissive material is phosphorescent and the first - If the phosphorescent material has a lower doublet energy, the emission from the second optical material in the second organic layer (4) may have However, depending on the concentration of the second light-emitting material and the second light-structural material in the second s 40, there may be some emission S from the first phosphorescent material in the organic layer 640, in any case, The first light-emitting material can be emitted from the first organic layer. Thus, the device of Figure 6 can have a plurality of different emission spectra ('fourth material') such that a broad overall emission of the device can be obtained. For an application, such as full illumination, The emission spectrum. 128110.doc -46- 200901530:7 shows an organic light-emitting device having an emission layer having a first and a second organic layer, the first organic layer and the magnetic layer of the Yanlong's machine layer having different concentrations = Materials and non-emissive materials, and the application of the first organic layer and the cathode is similar to that described in Figure 3, but as in the case of a device that transmits electrons in the layer and does not transmit holes, == is responsible for the application of the winter device The concept of the loss of the concept (4) ^ optical device does not include electrons in the scaly material upload η 二 二 子: It is believed that compound 8 is the electron transporter in the emission layer." - anode 715: Figure 7 Device includes - substrate - - Organic layer 72 (), - Organic layer 73 〇, first organic layer 740, a hole blocking layer 75 〇, and a cathode 770. No: 7% thick 电 ^ 千 千 层 760 The feed material is optional: the layer I hole blocking layer and the electron transport organic layer 730 are disposed on the anode food anode material and the non-emissive material. The first organic and including the scale light 3-25 wt... The concentration of the material is wt/0. The wt% of the non-emissive material in the first organic layer. The second organic layer 74 :: (10) touches the first organic layer 73. The second has = optical material and Non-emissive material. The second organic layer has a moderate degree of 1G_9i) Wt%. The non-emissive material in the second organic layer has a trace of H) - 90 wt%. The concentration of the photo-curable material in the second organic layer is the concentration of the phosphorescent material in the first organic layer. The device between Figure X and Figure 7 operates on the principle of the device class of Figure 3, in that it is intended to have a combination of materials, and the light-emitting emissive dopant is responsible for the electron transfer rather than the transmission of 128110.doc •47-200901530 I.n find holes. Therefore, the organic layer 740 is closer to the cathode 770 than the first organic layer 73 具有, and the organic layer 740 has a higher concentration than the first organic layer 73. Therefore, relative to the concentration of the phosphorous material. The electron mobility in the second organic layer and the organic layer 73 0 should be lowered, so that recombination may occur on or near the interface between the first organic layer 73 and the second organic layer 74 (). An organic light-emitting device manufactured using the parameters in Tables 1 and 3. Figure 9 shows a specific organic light-emitting device that is not manufactured and tested, and has first and second organic materials having different concentrations of phosphorescent materials and non-emissive materials. Figure 10 shows a specific organic light-emitting device that has not been manufactured and tested. The device of Figure 1 includes only four organic materials: Compound 8, Compound f, and Alq. Specific 5, the device of Figure 1 includes one in order. Ιτ〇 anode, a hole injection layer of a 〇 〇 thick compound Α, a 6 〇 nm thick 15% compound F doped mCBP emission layer, a 5 11111 thick 111 (: 81 > hole Barrier layer, a 20 nm thick Alq electron transport layer, one 〇 5 nm thick The inorganic electron injecting layer of UF and a 100 nm thick A1 cathode. Figure 11 is a graph showing the current density versus voltage of the device of Figure 10. Figure 12 is a graph showing the external quantum efficiency (EqE) versus current density of the device of Figure 10. Figure 13 is a graph showing the normalized intensity (arbitrary unit) versus time for the device of Figure 10. Figure 14 is a graph showing the normalized electroluminescence intensity versus wavelength for the device of Figure 10; 128110.doc • 48· 200901530 Figure 15 shows a specific organic light-emitting device that has been fabricated and tested. The device of Figure 1 includes only three organic materials: Compound F, mCBP, and Alq. Specific δ, the device of Figure 15 includes an ITO anode in sequence, one by one. The thickness of the nm-thicked material F, the emission layer of a 6-inch thick ι5% compound f-doped mCBP, a 5 nm-thick mCBp hole barrier layer, a 2 〇 nm thick layer Alq's electron transport layer, a 5-thick inorganic electron injecting layer, and a 10011111 thick octa cathode. The device of the ® 15 is similar to the ® 10 device except that the compound F is used instead of the compound A for the hole injection layer. In particular, compound F is also the device of Figure 15. The emissive material is shown in Fig. 16. The current density versus voltage curve of the device of Fig. 15. Fig. 17 is a graph showing the external quantum efficiency (EQE) versus current density of the device of Fig. 15. Fig. 18 shows Fig. 15 A graph of the normalized intensity (arbitrary unit) versus time for the device. Figure 19 shows a graph of normalized electroluminescence intensity versus wavelength for the device of Figure 15. Figure 20 shows a graph of normalized illumination versus time for various device configurations. The apparatus of Figure 15 and the experimental results plotted in Figures 16-19 show that the apparatus of Figure 15 has similar measurements as the apparatus of Figure 1. This demonstrates that compound F is a good hole transporter similar to compound A. If a compound? Without the hole transfer characteristics comparable to Compound A, the device of Figure 15 is expected to exhibit a lower performance than the device of Figure 10 due to the poor ability of the compound F to transmit holes. I28110.doc -49 - 200901530 Figure 21 shows An organic light-emitting device manufactured using the parameters in Table 2, which has first and second organic layers having phosphorescent materials and non-emissive materials of different concentrations. Figure 22 shows an organic light-emitting device fabricated using the parameters in Table 4, having first and second organic layers having phosphorescent materials and non-emissive materials of different concentrations. Table 5 shows the device performance of the device of Table 4. Table 4 HIL1 HIL2 HTL EML BL 100 A Reward 6 Compound A No compound D: Compound E 30% 300 A Compound D: Compound E 10% 300 A Compound D Example 7 Compound A No compound C: Compound A 30% 300 A Compound C: Compound A 10% A Compound c Example 8 LG-101 Compound A Balq: Compound A 30%: Compound G 3% 300 A BAlq: Compound A 10%: Compound Τ 3% A BAlq Example 9 Compound A No Balq: Compound A 30% : Compound G 3% 300 A BAlq : Compound A 10%: Compound G 3% A BAlq Comparative Example 2 Compound A No NPD 400 A Balq : Compound G 12% No Table 5 CIE at 1000 nits at 40 mA /cm2 X y voltage [V] LE "cd/Al EQE Γ%] Lo [nit] D 80% [h] Example 6 0.34 0.62 8.5 42.9 11.8 13815 1,700 Example 7 0.36 0.61 7.4 52.6 14.5 16380 1,200 Example 8 0.66 0.34 7.3 20.2 16.7 7359 -3,500 Example 9 0.66 0.34 7.7 19.1 15.8 6343 -3,500 Comparative Example 2 0.67 0.33 7.8 18.8 18.1 6382 963 Figure 23 shows the normalized electroluminescence intensity versus the device manufactured according to Figure 22 using the parameters from Table 4 A plot of the wavelength. Figure 24 shows the use from Table 4. A graph of the luminous efficiency illuminance of the device manufactured according to Fig. 22. Fig. 25 is a graph showing the quantum efficiency of the 128110.doc • 50-200901530 portion of the device manufactured according to Fig. 22 using the parameters from Table 4. 26 shows a plot of current density vs. voltage for a device fabricated according to Figure 22 using parameters from Table 4. Figure 27 shows a plot of illuminance versus voltage for a device fabricated according to Figure 22 using parameters from Table 4. Figure 28 shows the use The parameters from Table 4 are based on the normalized illuminance vs. time of the device fabricated in Figure 22. Figure 29 shows an organic light-emitting device fabricated using the parameters in Table 6, having phosphorescent materials with different concentrations and non-emissive properties. The first and second organic layers of the material, some devices have NPD layers and some do not have NPD layers. The data in Table 6 shows the introduction of a 100 A NPD layer between the hole injection layer and the emissive layer to reduce the life of the red illuminating device . Table 6: HIL layer (each layer 100 A) C] [E XY voltage at 40 mA/cm2 at 1,000 nits Μ LE. fcd/Al EQE [%] PE [lm/Wl LT5〇〇/0 [ h] Lo [Nit] LTs〇〇/〇M LG- 101 Compound A NPD 0.659 0.339 7.5 22.5 18.8 9.4 195,000 8,170 2,800 LG- 101 Compound A - 0.658 0.340 7.3 20.2 16.7 8.7 346,000 7,359 4,000 - Compound A NPD 0.658 0.340 7.7 24.3 20.2 9.9 8,490 2,200 - Compound A - 0.657 0.341 7.7 19.1 15.8 7.8 285,000 6,343 4,000 Figure 30 shows an organic light-emitting device without an NPD layer. Figure 31 shows an organic light-emitting device having an NPD layer. Figure 32 is a graph showing the external quantum efficiency contrast of the devices of Figures 30 and 31. 128110.doc -51 - 200901530 Figure 33 shows a plot of power performance contrast for the devices of Figures 30 and 31. Figure 34 is a graph showing the illuminance versus voltage for the devices of Figures 30 and 31. Figure 35 shows a plot of electroluminescence intensity versus wavelength for the apparatus of Figures 30 and 31. Figure 36 shows a graph of normalized illumination versus time for the apparatus of Figure 30 under various initial illuminations. Figure 37 shows a graph of normalized illumination versus time for the device of Figure 31 under various initial illuminations. Figure 38 shows an organic light-emitting device having emission from NPD and BAlq. Figure 39 is a graph showing the external quantum efficiency contrast of the device of Figure 38. Figure 40 is a graph showing the power performance contrast of the device of Figure 38. Figure 41 shows a graph of illumination versus voltage for the device of Figure 38. Figure 42 is a graph showing the electroluminescence intensity (arbitrary unit) versus wavelength for the device of Figure 38. Figure 43 shows a graph of normalized illumination versus time for the device of Figure 38. Figure 44 shows an organic light-emitting device having only emission from Alq. Figure 45 is a graph showing the external quantum efficiency contrast of the device of Figure 44. Figure 46 is a graph showing the power performance contrast of the device of Figure 44. Figure 47 is a graph showing the illuminance versus voltage for the device of Figure 44. Figure 48 is a graph showing the electroluminescence intensity (arbitrary unit) versus wavelength for the device of Figure 44. Figure 49 shows a graph of normalized illumination versus time for the device of Figure 44. The figure shows an organic light-emitting device having only a layer having a high hole conductivity between the emission layer and the anode 128110.doc • 52· 200901530 and a material similar to the non-emissive body used as the emission layer. Hole blocking layer. The device of Figure 50 comprises a 10 mn thick LG101 hole injection layer, a 6 〇 nm thick first organic emission layer of compound j doped with i5 w(9) compound yttrium, and a hole blocking of a thick compound J. Layer, an electron transport layer of 2 〇 nm thick Alq and a LiF/Al cathode. Figure 5 is a graph showing the normalized illumination versus time for the device of Figure 5. Figure 52 is a graph showing the external quantum efficiency contrast of the device of Figure 50. Figure 53 is a graph showing the power performance contrast of the device of Figure 50. Figure 54 shows a plot of illumination versus voltage for the device of Figure 50. Figure 55 shows a plot of EL intensity versus wavelength for the device of Figure 50. Figure 56 shows an organic light-emitting device having only a layer having a high hole conductivity between an emissive layer and an anode, a hole barrier layer having the same material as a non-emissive body in the emissive layer, and An emissive layer having first and second organic layers having different concentrations of phosphorescent material and non-emissive material, wherein the concentration of the phosphorescent material in the second organic layer is variable. The device of Figure 56 comprises a 10 nm thick hole injection layer of LG101, a 3 Å thick layer of 30 wt% compound Η doped compound J, a first organic emission layer, a 30 nm thick X wt% A second organic emission layer of compound j doped with compound η, a hole barrier layer of a 25 nm thick compound J, an electron transport layer of 2 nm thick Alq, and a LiF/Al cathode. In the device manufactured, χ varies from 10 wt% to 18 wt%, as shown in the legend of Fig. 57, χ=1〇, 14 and 18 wt%. The apparatus of Figure 56 is very similar to the apparatus of Figure 50, except that there is a concentration step of dopant enthalpy in the apparatus of Figure 56, but not in the apparatus of Figure 50 of 128110.doc • 53-200901530. Figure 57 shows a graph of normalized illumination versus time for the device of Figure 56. Figure 58 is a graph showing the external quantum efficiency contrast of the device of Figure 56. Figure 59 is a graph showing the power performance contrast of the device of Figure 56. Figure 60 shows a graph of illumination versus voltage for the device of Figure 56. Figure 61 shows a plot of EL&amp;degree versus wavelength for the device of Figure 56. The device of Figure 56 can be compared to the device of Figure 5A. Depending on the device architecture, except that the device in Figure 5% of the emission layer has a concentration step of compound η, and the device of Figure 5 不 does not have, the devices are similar. The measurement results of the two devices show that the device of Figure 56 has a lower operating voltage achieved by a step of dopant concentration. The device of Figure 56 also has a preferred blue CIE coordinate as compared to the device of Figure 50. It is believed that the preferred CIE coordinate is due to the optical effect produced by the recombination of the cathode of the device close to Figure %, due to the increased hole conductivity in the layer doped with 〇% of the compound Η. The device of the Tudor also shows the external quantum efficiency of the device above that of Figure 50. It is believed that the higher efficiency of the device of Figure 56 is due to the more unfolded recombination caused by the dopant concentration step and the better electron and hole balance at the position of &gt; In addition, recombination typically occurs on the interface 'and the device of Figure 56 has three interfaces comprising a layer of illuminable caused by a concentration step' and the device of Figure 50 has only two such interfaces. 62 shows an organic light-emitting device that has only one layer having a high hole conductivity between the emission layer and the anode, and a hole barrier layer which is the same material as the non-emissive body in the emission layer and An emissive layer having first and second organic layers of phosphorescent materials having different concentrations in the first and second organic emissive layers, wherein the phosphorescent material is concentrated in the second organic emissive layer by 12811〇, d〇c • 54· 200901530 is variable. The device of Fig. 62 comprises a hole injection layer of 11 Å 11]11 thick 2LG1〇1, a first organic emission layer of a 30 nm thick compound 30 doped with compound a, and a 30 nm thick layer. X wt% compound H doped compound J second organic emissive layer, a 25 nm thick compound j hole blocking layer, a 20 nm thick Alq electron transport layer and a UF/A1 cathode. In the device manufactured, X was varied from 10 wt% to 18 wt%, as shown in the legend of Fig. 57, X = 10, 14 and 18 wt%. The apparatus of Figure 62 is very similar to the apparatus of Figure 56, except that the apparatus of Figure 62 uses different emissive phosphorescent materials in the first and second organic emissive layers, while the apparatus of Figure 56 uses the same phosphorescence in both layers. Sexual material. The concentration of the phosphorescent material in the device of Fig. 56 is the same as that of the device of Fig. 62. Figure 63 is a graph showing the external quantum efficiency contrast of the device of Figure 62. Figure 64 is a graph showing the power performance contrast of the device of Figure 62. Figure 65 shows a plot of illumination versus voltage for the device of Figure 62. Figure 66 shows a plot of EL intensity versus wavelength for the device of Figure 62. The device of Figure 62 can be compared to the device of Figure 56. According to the device architecture, the device of FIG. 62 has an emissive layer doped with a photo-emissive emitter compound a and another emissive layer doped with a photo-emissive emitter compound, except that in the emissive layer, the device of FIG. 56 has only These devices are similar except for the luminescent emitter compound η. Both devices have a dopant concentration step and similar concentrations even though the actual dopants are different in each layer. A comparison of these two device architectures can be used to understand the key points. First, the device of Figure 62 shows a broad emission spectrum from the emission combination of compound a and compound 。. Therefore, it can be inferred that the device of Fig. 56 is irradiated with a layer doped with 30% of the compound η and a layer doped with a smaller concentration of the compound η 128l0.doc 55· 200901530. Comparing Fig. 58 with Fig. 63, it can be seen that the device has a better charge balance than the device of Fig. 25, and is relatively flat at the order of magnitude of the device of Fig. 62 compared to the order of (10) of the device of Fig. 56. Proved. A device having two layers of non-transmission layers is fabricated using a material such as NPD, which does not include a hole transport layer. Table 7 shows the structure of the device such as the twist. Table 8 shows the experimental results of the devices measured. In general, these devices have an IT〇 anode

= Incoming layer and - having an emissive layer having one of the first interfaces in the middle with an = organic layer. Some of the devices in the devices have a hole-carrying layer, and all of the devices have an electron transport layer of LG201 and a LiF/A1 cathode from the same source as LG1. Devices i, 2, and 4 include the same non-emissive material in the first and second organic layers, but different disc materials. Device 5·8 has first and second organic layers having different non-emissive materials and different phosphorescent materials. The devices 9, 11 and 12 have first and second organic layers having different non-emissive materials and different disc-light materials, wherein the first organic layer additionally comprises an emissive material. The device 13_22 has a first and a second organic layer having the same non-lx luminescent material and different phosphorescent materials, wherein the first organic layer additionally comprises a lower energy emissive material. All of the devices 1 ' 2, 4, 5-8, 9, 11, 12, and 13-22 include an emitter layer having a &quot;® and a second organic layer # in the middle. In most of these packages f, the concentration of the phosphorescent material in the first (near the anode) organic layer is better than that. However, in the cracks 8 and 9, the concentration of the phosphorescent material in the second organic layer is relatively low. The emissive layer of device 3 does not include first and second organic layers each having a non-emissive material and a phosphorescent material with an interface therebetween. Device 10: Material: The device 匕 emission layer is also not included, because the compound Β is non-emission treatment in the device 10, and the device 10 does not include the first and second non-emissive materials and phosphorescent materials, respectively. Organic layer. r 2 3 4 5 6 7 8 0 10 11 12 13 14 15 16 17 18 19 20 21 22 iTO [80 nmJ ITO [80 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] iTO [120 nm] ITO | 120 nm] ITO [120 nm] ITO [120 nm] ITO [120 nm] iTO [120 nm] iTO [120 nm] ] ITO [120r»m] ITO [120nm] LG101 I10nmj LG101 [10nm] LG101 [10nm] LG101 |10nm] LO101 [10nm] LG101 I10nm| LG101 |1GnmJ LG101 [10nm] LG101 f10nm] LG101 [10nm] LG101 [10nm] LG101 [10nm] LG101 [10nm] LG101 I10nm] LG101 [10nmj LG101 [Iflnm] LG101 [10nm] LG101 [10nm] LG101 LG101 [10nm3 LG101 [10nm] LG101 [lOnm] D:P 30% [15nm] D:P 30 % [15nm} CP 30% I30nmj B: P 30% [30nm] 8: P 30% [30nm] mCBP: N 9% i25nmj mCBP: N 9% i25nmj B: P: 0 30%: 1% I30nm] B: P: 0 30%: 1% [30 nm] B: P; 0 30%: 0.5% IZQnm] B: P: 0 30%: 0.5% [30n: ml J: P: 0 30%; 0.5% [3GnmJ J :P:0 30%:0.5^ i30nm) M:P:0 30%:0.5% [30rim] M:P:0 30%:0.5% [30nm] M:P:0 30%:0.5% {30nmJ M :P;C 30%:0.5% [30nml M;P;0 30%:0.5% {30nm] M:P;0 30%:0.5% [30nm] M:PrO 3〇%:〇.5% [20nml M: P; 0 30%: 0, 5% [20 nm] D: N 12% [15 nm] D: N12% i15 nm] C: N 12% [30 nm] C: N 12% [30 nm] mCBP: N 9% [25 nm] mCBP: N 9% [25 nm] B: P 30% [30 nm] B: P 30% [30 nm] mCBP: N 12% [25 nm] B [15 nm] mCBP: N 12% [30 nm] mCBP: N 12% [30 nm] J: N 12% [25rtm] J: N m [25nm] M: N 18% [25nm] M: N 18% [25nm] M: N 24% [25nm] M: N 24% [ 25 nm] U: H 18% [25 nm] M: N 12% [25 nm J M: N 18% [25 nm] M; N 18% [25 nm] D | 20 nm] D (20 nm) HPT [5 nm] HPT I5nm] mC8P [ 5nm] B [5nm] mC8P: N 12% [25nm] ivl [5nm] M [5nm] M }5nm] M [5nm] M |5nmJ M f5mn] M I5nm] M [5nm] LG201 t20nm] LG201 [20nni) LG201 [40nm] LG2D1 [4Gnm] LG2G1 f45nm] LG2Q1 [45nm] LG201 [45nm] LG201 [45nmJ LG201 [45nm] LG2G1 [45nm] L02CM LG201 [30nm] LG201 [30nm] LG201 [30nm] LG201 [30nm] L6201 [30nm ] LG201 [30nm] LG201 [30nm] U3201 [30嶋] LG201 [30nm] LG2G1 [30nm] LG201 [30nm]

LiF; Ai [100 nm) LiF/Αί LiF/AE [100nmJ UF/ΑΪ [100nm] UF/Ai[100nm] LiF/Ai [100nm] LiF/Ai [tOOnm] LiF/Αί [100nm] LiF/At [10〇 Nm] LiF/AI [100nm] LiF/A! [100nm] LiF/Af [lOOnm] LiF/Αί [100nmj LiF/AI [100nm] LiF/Af [100nm] LiF/Αί [100nml LiF/Ai [100nmJ UF/ AI [100nm] UF/AI [100nm] LiF/Αί [100nm] LiF/Αί [100nm] LiF/Al (1〇〇nmJ Mounted 123456789 Under 1,000 nits at 10 mA/cm2 by 1 , 000 nits V cd/A EQE (%) PE (lm/W) CIEx CIEy LT70 LT50 7.5 17.1 5.1 7.2 0.439 0.545 6.0 15.4 4.6 8.0 0.439 0.545 6.2 6.4 2.1 3.3 0.258 0.569 6.7 28.4 9.1 13.4 0.464 0.521 10.0 30.2 9.8 9.5 0.444 0.517 9.0 32.9 10.4 11.4 0.442 0.523 9.8 7.6 2.3 2.4 0.401 0.552 9.2 7.1 2.2 2.4 0.361 0.560 7.7 23.6 13.2 9.6 0.516 0.424 1,000 5,000 128110.doc -57- 200901530 At 1, 〇00 nits ^ 匕 information at 10 mA / Cm2 by].000^ wins V cd/A EQE(%) PE (ImAV) 8.3 CIE X 0.543 CIEy 0.413 — ίτ7° 1.500 LT50 5 000 8.3 21.9 12.8 8.9 24.6 13.5 8.7 0.533 0.424 1 0 ΛΛΛ 35.000 50.000 7.4 27.4 14.5 11.6 0.524 0.426 j 6.3 21.3 11.1 10.6 0.501 0.431 —^ υυυ 6.5 22.2 12.0 10.7 0.542 0.422 , _6.1 23.7 10.9 12.3 0.467 0.457 6,2 31.7 15.1 16.1 0.500 0.445 6.2 14.9 6.9 7.5 0.467 0.457 2,000,000 6.1 29.5 13.5 15.2 0.456 0.460 ------- _ ιοο,οοο 6.3 32.4 15.3 16.1 0.437 0.451 ~~ _7.0 33.2 16.3 15.0 0.505 0.439 —6,4 29.0 13.9 14.3 0.472 0.449 ^2 29.4 14.2 Γ 14.9 0.467 0.448 Device 10 11 12 13 14 15 16 17 18 19

V 20 21 22 Table 9 shows the device structure of some devices having an emissive layer having an interface between a first organic layer and a second organic layer, and the experimental results measured, wherein the host and the dopant (ie, non-emissive material) is in the same material, and the phosphorescent material is the same material in the two layers, but the degree is different. All the devices in Table 9 have a hole of the A compound a = the in-layer, - (10) A hole blocking layer of different materials depending on the specific device = "), - 400 A electron transport layer and one cathode. An intermediate-intermediate-organic layer and a second organic layer, wherein the body machine is: a non-emissive material having a k concentration of 7〇Wt% (in Table 9), a farming degree of 3 〇Wt% phosphorescent material ("dopant" in Table 9), and the second organic layer is 3 〇〇A thick 〇n, 0/^, material ("body" in Table 9) And the same non-emissive material agronomy is 1 〇 Wt% of the same phosphorescent material (Table 9 II =). In Table 9, identify the specific body and A of each device (the general device structure of the 100 AV device is: IT〇 (1200 A) / compound) / body (7G Wt%): dopant (3〇A) / Body (9〇128110.doc -58- 200901530 wt%): dopant (10 wt0 / 〇) (300 A) / BL (100 A) / Alq3 (400 A) / LiF / A Table 9 Example C: IE at 1000 nits at 40 mA/cm2 host dopant BL XY voltage Μ LE [cd/A] eqe [%] PE [lm/W] Lo f nits 1 LTs〇% [h] ATAT 0.36 0.61 6.4 57.5 15.9 28.2 17,225 1060 BTA HPT 0.36 0.61 5.8 60.4 16.6 32.7 16,732 1000 CTUT 0.34 0.62 8.4 46.4 12.5 17.3 15,184 2100 DT u HPT 0.35 0.62 7.8 54.7 14.8 22.0 15,904 1350 It should be understood that the various embodiments described herein are examples only. It is intended that the scope of the invention not be limited. For example, many of the materials and structures described herein may be substituted by other materials and structures without departing from the spirit of the invention. Therefore, it will be apparent to those skilled in the art that the present invention may be construed to include variations of the specific examples and preferred embodiments described herein. It should be understood that it is not intended to limit the various aspects of the operation of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows an organic light-emitting device. Fig. 2 shows an inverted type organic light-emitting device which does not have an independent electron transfer layer. 3 shows an organic light-emitting device having a first and a second organic layer having different concentrations of phosphorescent material and non-emissive material, &amp; an organic layer between the first organic layer and the anode having a specific electric load Mob mobility characteristics. Fig. 4 shows an organic light-emitting device having a first and an organic layer having phosphorescent materials and non-emissive materials of different concentrations, and 128I10.doc -59·200901530 having no organic layer between the carrier layer and the anode. The display shows an organic light-emitting device with only three organic materials. Figure 6 shows an organic light-emitting device similar to the organic light-emitting device of Figure 3, but which includes a plurality of phosphorescent materials. The present invention has a first and second organic layer having phosphorescent materials and non-emissive materials of different concentrations, and the organic layer between the first organic layer and the cathode has specific charge carrier migration. Rate characteristics. Figure 8 shows a general phosphorescent OLED structure. Figure 9 shows a specific organic light-emitting device that has been fabricated and tested having first and second organic layers having different concentrations of scalar and non-emissive materials. Figure 10 shows a specific organic light-emitting device that has been fabricated and tested. Figure 11 shows a plot of current density versus voltage for the device of Figure 10. Figure 12 is a graph showing the external quantum efficiency vs. current density for the device of Figure 10. Figure 13 is a graph showing the normalized intensity (arbitrary unit) versus time v of the apparatus of Figure 10. Figure 14 is a graph showing the normalized electroluminescence intensity versus wavelength for the device of Figure 10. Figure 15 shows a specific organic light-emitting device that has been fabricated and tested. Figure 16 is a graph showing current density vs. voltage for the device of Figure 15. Figure 17 is a graph showing the external quantum efficiency (EqE) versus current density of the apparatus of Figure 15. Figure 18 is a graph showing the normalized intensity (arbitrary unit) versus time of the apparatus of Figure 15 versus 128110.doc • 60-200901530. =19 shows the morphogram of the normalized electroluminescence intensity versus wavelength for the device of Figure 15. . A graph of normalized illumination versus time for various device configurations. And Figure 21 shows an organic light-emitting device fabricated using the parameters in Table 2, which is provided with a wall material of different/lengths and a second organic layer of a non-emissive material. And its first and

Figure 22 shows an organic light-emitting device ',' manufactured using the parameters in Table 4, a phosphorescent material of different/agronomic degree, and a second organic layer of a non-emissive material. Figure 23 shows a graph of normalized electroluminescence intensity versus wavelength for a device fabricated according to Figure 22 using parameters from Table 4. Figure 24 is a graph showing the light efficiency contrast of the device manufactured according to Figure 22 using the parameters from Table 4. Figure 25 shows the use of parameters from Table 4 according to the figure. A plot of the quantum efficiency contrast outside the fabricated device. Figure 26 is a graph showing current vs. voltage versus voltage for the device fabricated according to Figure 22 using parameters from Table 4. Figure 27 shows a plot of illuminance vs. voltage for a device fabricated according to Figure 22 using parameters from Table 4. Figure 28 shows a graph of normalized illuminance versus time for a device manufactured according to Figure 22 using parameters from Table 4. Figure 29 shows an organic light-emitting device fabricated using the parameters in Table 6, having a first organic layer having different concentrations of phosphorescent material and non-emissive material, and a second organic layer of 128110.doc • 61 - 200901530, some devices having one Npd layer and some devices do not have an NPD layer. Figure 30 shows an organic light-emitting device without an NPD layer. Figure 31 shows an organic light-emitting device having an npd layer. Figure 32 is a graph showing the external quantum efficiency contrast of the devices of Figures 30 and 31. Figure 33 is a graph showing the power efficiency contrast of the devices of Figures 30 and 31. Figure 34 is a graph showing the illuminance versus voltage for the devices of Figures 30 and 31. Figure 35 is a graph showing the electroluminescence intensity versus wavelength for the devices of Figures 30 and 31. Figure 36 shows a graph of normalized illuminance vs. time for the device of Figure 3 under various initial illuminations. Figure 3 &lt;7 shows a graph of normalized illuminance vs. time for the device of Figure 3 under various initial illuminations. Figure 38 shows an organic light emitting device having emission from nPd and BAlq. Figure 39 is a graph showing the external quantum efficiency contrast of the device of Figure 38. Figure 4 is a graph showing the power performance contrast of the device of Figure 38. Figure 41 shows a graph of illumination versus voltage for the device of Figure 38. Figure 42 is a graph showing the electroluminescence intensity (arbitrary unit) versus wavelength for the device of Figure 38. Figure 43 shows a graph of normalized illumination versus time for the device of Figure 38. Figure 44 shows an organic light-emitting device having only emission from Aiq. 128110.doc -62- 200901530 Figure 45 shows a graph of the external quantum efficiency contrast of the device of Figure 44. Figure 46 is a graph showing the power performance contrast of the device of Figure 44. Figure 47 is a graph showing the illuminance versus voltage for the device of Figure 44. Figure 48 is a graph showing the electroluminescence intensity (arbitrary unit) versus wavelength for the device of Figure 44. Figure 49 shows a graph of normalized illumination versus time for the device of Figure 44. Figure 5A shows an organic light-emitting device having only a layer having a high hole conductivity between an emissive layer and a positive p-electrode and a same material used as a non-imposing host in the emissive layer. Hole blocking layer. Figure 51 shows a graph of normalized illumination versus time for the device of Figure 50. Figure 52 is a graph showing the external quantum efficiency contrast of the device of Figure 50. Figure 53 is a graph showing the power performance contrast of the device of Figure 50. Figure 54 shows a plot of illumination versus voltage for the device of Figure 50. Figure 55 shows a plot of ELa versus wavelength for the device of Figure 50. Figure 56 shows an organic light-emitting device having only a layer having a high hole conductivity between an emissive layer and a positive electrode, and a hole blocking of the same material used as a non-emissive body in the emissive layer. And an emissive layer having a first and a second organic layer having different concentrations of the disc-like material and the non-emissive material, wherein the concentration of the phosphorescent material in the second organic layer may vary. Figure 57 shows a graph of normalized illumination versus time for the device of Figure 56. Figure 58 is a graph showing the external quantum efficiency contrast of the device of Figure 56. Figure 59 is a graph showing the power performance contrast of the device of Figure 56. Figure 60 shows a graph of illumination versus voltage for the device of Figure 56. Figure 61 shows a plot of EL intensity versus wavelength for the device of Figure 56. 128110.doc -63 - 200901530 Figure 62 shows an organic light-emitting device which has only one layer having a high hole conductivity between an emissive layer and an anode, and the same as a non-emissive body in the emissive layer a hole blocking layer of the material and an emissive layer having a first and an organic layer of the (four) photoactive material in the first and second organic emissive layers, wherein the phosphorescent material is in the second organic emissive layer The concentration can vary. Fig. 63 is a graph showing the external quantum efficiency of t in Fig. 62.

Figure 64 is a graph showing the power performance contrast of the device of Figure 62. Figure 65 shows a plot of illumination versus voltage for the device of Figure 62. Figure 66 shows a plot of EL intensity versus wavelength for the device of Figure 62. [Main component symbol description] 100 organic light-emitting device 110 substrate 115 anode 120 hole injection layer 125 hole transmission layer 130 electron resistance layer 135 emission layer 140 hole barrier layer 145 electron transport layer 150 electron injection layer 155 protective layer 160 cathode 162 first conductive layer 128110.doc -64 - 200901530 164 second conductive layer 200 inverted OLED 210 substrate 215 cathode 220 emission layer 225 hole transport layer 230 anode 310 substrate 315 anode 320 third organic layer 330 first organic layer 340 Second organic layer 350 hole blocking layer 360 electron transport layer 370 cathode 410 substrate 415 anode 430 first organic layer 440 second organic layer 450 hole blocking layer 460 electron transport layer 470 cathode 5 10 substrate 515 anode 128110.doc -65 - 200901530 520 third organic layer 530 first organic layer 540 second organic layer 550 hole blocking layer 560 electron transport layer 570 cathode 610 substrate 616 anode 620 third organic layer 630 first organic layer 640 second organic layer 650 hole Barrier layer 660 electron transport layer 670 cathode 710 substrate 715 anode 7 20 Third organic layer 730 First organic layer 740 Second organic layer 750 Hole barrier 760 Electron transport layer 770 Cathode 128110.doc -66-

Claims (1)

200901530 X. Patent application scope: l An organic light-emitting device comprising: an anode; a cathode; the emission layer of the emission layer disposed between the anode and the cathode comprises: + inclusive-disc a material and a first organic layer of a non-emissive material, wherein The concentration of the first phosphorescent material in the first organic layer is 10-90 wt%; and the concentration of the first non-emissive material in the first organic layer is 10-90 wt ° /〇; 'L 3 a first organic layer of a light-emitting material and a second non-emissive material, wherein the concentration of the second phosphorescent material in the first layer of I is Η; wt0/0; and 75-97 wt%; a concentration of the second luminescent material in the second organic layer is lower than a concentration of the first luminescent material in the first organic layer; and wherein the first non-emissive material and the second non-emissive material The material may be the same material or different materials, and the first material and the first phosphorescent material may be the same material or different materials; and wherein all organic layers between the first organic layer and the anode have 128110. Doc 200901530 Hole mobility and one electron migration are at least twice the far electron mobility.彡 The rate of the material 2_, such as % of the device of item 1, wherein ···, -_’ is the material. The irradiance material is the same material as the second non-emissive material. 3. The device of claim 1, wherein the radiant material and the second material are different materials, non-emissive materials and the second material. The non-emissive material is the same material. 4. The device of claim 1, wherein t: =1 the light material and the second material are different materials and materials. / 1 The emissive material and the second non-emissive material are different materials. 5. The device of claim 1, wherein: the photonic material is the same material as the second optic material, and the material y is a non-emissive material And the second non-emissive material is a different material. 6. The device of claim 1, wherein: the second layer, the second organic layer or both further comprise a relatively summer-emitting material, wherein the comparison The low energy is 0.1-12 wt%. W / Chen degree 7. The device of claim 1 wherein there is no organic layer in the first organic layer and the gate of the anode. The apparatus of item 1, wherein the second organic layer exists between the first organic layer and the anode, and the first organic layer and the anode are All of the organic layers have a hole mobility and an electron mobility such that the hole mobility is at least ten times greater than the electron mobility. As claimed in the apparatus 'where the first organic layer and the anode> a first organic layer, and all of the organic layers between the first organic layer and the anode have a hole mobility and an electron The mobility is such that the hole mobility is at least 1 times greater than the electron mobility. The apparatus of claim 1, wherein the concentration of the second phosphorescent material in the second organic layer is at least 5 wt% lower than the wavelength of the first phosphorescent material in the first organic layer. 11. The apparatus of claim 1, wherein the concentration of the second scaled material of the second organic layer towel is at least 1 〇 wt0/〇 lower than the concentration of the first phosphorescent material in the first organic layer. The device of claim 1, wherein the first organic layer consists essentially of the first phosphorescent material and the first non-emissive material, and the second organic layer is substantially the second of the first organic layer The phosphorescent material and the second non-emissive material are composed. 13. The device of claim 1, wherein the total thickness U of the first organic layer and the second organic layer is less than 400 A, and wherein the thickness of the organic layer is at least 50 A, and the second organic layer The thickness is at least 5 〇A. 14. The apparatus of claim 2, wherein the first phosphorescent material has a higher than the highest occupied molecular orbital domain of the non-emissive material of at least e3 eV&lt; the highest occupied molecular orbital region, and the second phosphorescent material Having a higher than the second occupied molecular orbital of the 128118.doc 200901530::::immobilistic material at least 03 V I still occupy the molecular orbital domain. 〇.3 eV of the most 15 · If the request item is set, 1 into a layer of cattle and the anode is widely distributed in the first organic layer of the first organic layer, the first - phosphorescent Material composition, and::: The organic layer substantially touches the first organic layer and the (four) electrode. "-the organic layer is directly connected to the device of the request item, the first layer between the layer and the cathode: the organic layer 2; = on the second organic layer from the second non-emissive material group: the layer is substantially direct Contacting the second organic layer. The fourth organic layer is in the apparatus of claim 1, wherein the device is placed on the second organic layer and has _ + _^ The β-tetra-organic layer has a triplet energy of substantially the second phosphorescent material at least in contact with the second organic layer. "中中"4 The fourth organic layer is a device as claimed in claim 18, wherein the device selected from the group consisting of a triphenylsulfonium-emitting material is selected from the group consisting of dibenzoquinone-containing, monobenzothiophene, and coupled with carbazole. a material of a group consisting of a group of phenotypes. A device such as a device of the present invention, wherein the device contains the material. The summer material includes no more than three different organic materials. 20. The device, material, and device of the item 1匕 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子- the organic layer is in direct contact with the second organic layer of the I28110.doc 200901530. An organic light-emitting device comprising: an anode; a cathode; - an emission layer disposed between the anode and the cathode The method includes: a first organic layer comprising a first phosphorescent material and a first non-emissive material, wherein the concentration of the first phosphorescent material in the first organic layer is 10-90 wt%; and the - the organic layer - the first non-emissive material The concentration is 10-90 wt%; a second organic layer comprising a second phosphorescent material and a second non-emissive material, wherein the concentration of the second phosphorescent material in the X first layer is wt0/0; And 厶. == The concentration of the second non-emissive material in the layer is the second phosphorescent material of the first-historic organic layer, and the difficulty of the second organic material is low. Wherein the concentration of the first luminescent material in the crucible; and the non-emissive material is the same material or different material as the second non-emission β 41, and the material is a second phosphorescent material Μ first disc light The material and the straight material may be the same material or different materials, and the organic layer of the first layer and the organic layer between the electrodes are not 128110.doc 200901530 includes: containing a selected from triaryl An amine, a naphthyl group, a tris- aryl group, a tetraarylamine, and a group of a group of the genus of the genus. 23. The device of claim 22, wherein: the temperament material And the first: non-emissive material and the second non-emissive material 24. The device of claim 22, wherein: the first (4) and (4): the phosphorescent material is a germanium material and the first non-emissive material and the second non-emissive material are phase materials. The device of claim 22, wherein: the first, optical material and the third phosphor material are different materials, and the first non-emissive material and the second non-emissive material are different materials. The device of claim 22, wherein: the first light-filling material and the second light-emitting material are the same material, and the first non-emissive material and the second non-emissive material are unexpected. 27. The device of claim 22, wherein: the first organic layer, the second organic layer, or both further comprise a lower energy emissive material that causes the concentration of the lower energy emissive material to be 〇 1 -12 wt% 〇 28. The device of claim 22, wherein there is no organic layer between the first organic layer and the anode 128110.doc 200901530. 29. The device of claim 22, wherein the first organic layer consists essentially of the first phosphorescent material and the first non-emissive material, and the second organic layer consists essentially of the first organic layer The second phosphorescent material and the second non-emissive material are composed. An organic light-emitting device comprising: an anode; a cathode; The step comprises: a -:: a phosphorescent material and a first layer of a non-emissive material, wherein the concentration of the first phosphorescent material in an organic layer is 10-90 wt〇/〇; And =; the concentration of the first non-emissive material in the organic layer is I U-90 wt%; ^ 3 the first phosphorescent material and a second organic layer, wherein the germanium-non-emissive material The wt% in the second layer; and the indifference of _ Μ _ is 3_25 of the 75th to 97th% in the second organic layer; and the concentration of the F-positive material is set to 5th The third organic layer between the layer and the third organic layer 128I10.doc 200901530 2 is substantially directly contacted by the third organic layer of the first phosphorescent material group An organic layer and the pole; = a concentration of the second phosphorescent material in the middle is a concentration of the first phosphorescent material in the first layer; and the first non-emissive material and the second The non-emissive material may be a first-visible material or a different material, and the first phosphorescent material and the phosphorescent material may be the same material or different Material. , h) as claimed in claim 30, wherein: the Koko phosphorescent material and the second material are the same material material 4 the emissive material is the same material 32. The device of claim 3, wherein: The village material and the second luminescent material are the same non-emissive material and the second non-emissive material is 33. The device of claim 3, wherein: the β material and the first material: The device of claim 3, wherein: the second luminescent material is phase _, and the luminescent material and the second non-emissive material are different materials 128110.doc 200901530. 35. If the request item 3〇 is placed, where: Low 2: Huan organic layer, the second organic layer or both are included - the emission in the lower month b is good! ^ Material, where The concentration of the lower energy emissive material is 砀ui-12 wt〇/〇. ::::3. The device, wherein the first organic layer consists essentially of the first layer of the first non-emissive material, and the first organic material of the second organic non-emissive organic layer The first non-emissive material consists of. η::: Μ Μ ' 其中 ' </ RTI> wherein the device comprises no more than 3 different devices having 38:: Ϊ ,, wherein the device comprises no more than 4 different organic materials 且 and one of the organic materials For this emission layer and the falling Mei Xi... C (four) lies in the device, Q "(5) electron transfer material between the 4 poles. 39. An organic light-emitting device comprising: an anode; a cathode; - disposed on the anode Further comprising: /, an emissive layer between the cathodes, the emissive layer comprising two: -:: material and - the first, the radioactive material in the first organic layer is $ 10-90 wt%; The concentration of the first phosphorescent material in the first organic layer is the concentration of the first non-emissive material is 128110.doc 200901530 f.....\V 10-90 wt〇/〇.;::c material And the concentration of the second phosphorescent material in the layer is 3-25 = 7 2: the concentration of the second non-emissive material in the layer is the concentration of the second photoactive material Lower than the concentration of the first first optical material; and the same material or two: the material and the second non-emissive material may be second The light material may be a phase gate: two first-disc optical materials and the first-organic layer material; and all organic layers between the electrodes of the organometallic material are substantially 40. The device of claim 39, wherein : The first material is the same material as the second scale light material, and the material is the same as the second non-emissive material. The device of claim 39, wherein: ^ The raw material and the second optical material are different materials... the non-emissive material and the second non-emissive material I: the same: 42. The device of claim 100, the order: the first light material And the second luminescent material is a different material, material 128110.doc and -10. 200901530, the first non-emissive material and the second non-emissive material are different materials. The device of claim 39, wherein The first-disc material is the same material as the second-disc material, and the material is a different material from the second non-emissive material. 44. The device of claim 39, Where: = the first - organic layer, the second organic layer or both a low emissive material, wherein the lower energy emissive material has a rich yield of 0.1-12 wt0/〇. &amp; 45. An organic light-emitting device comprising: an anode; a cathode; a female placed on the anode An emissive layer between the cathodes, the emissive layer further comprising: a first organic layer comprising a first phosphorescent material and a first non-emissive material, wherein the first phosphorescent material in the first organic layer The concentration is 10-90 wt%; and the concentration of the first non-emissive material in the first organic layer is 10-90 wt%; ^ δ the first luminescent material and the second non-emissive material a second organic layer, wherein the concentration of the second phosphorescent material in the second layer is 3-25 128110.doc 200901530 wt%; and the concentration of the second non-emissive material in the second organic layer is 75 -97 wt%; the concentration of the second phosphorescent material in the second organic layer is lower than the concentration of the first-disc photosensitive material in the first organic layer; and the first non-emissive village in the middle And the second non-emissive material may be the same material or different materials, The first phosphorescent material and the second phosphorescent material may be the same material or different materials, and all of the organic layers between the first organic layer and the anode have a sufficiently large hole conductivity, so that Increasing the thickness of this layer by 10 nm at a current of 1 〇 2 results in a voltage increase of 0.1 V or less. The device of claim 45, wherein: the Si? material is the same material as the second phosphorescent material, and the material, the radioactive material and the second non-emissive material are the same material. 47. The device of claim 45 Wherein: the first phosphorescent material and the second phosphorescent first non-emissive material are different materials, and the material coffin (4) the second non-emissive material is the same material 48. The device of claim 45 , wherein the material is different from the second phosphorescent material and the second non-emissive material is different material 128110.doc •12- 200901530 49. If request 45 The device, wherein: the first-disc material is the same material as the second-disc material, and the first non-emissive material and the (four) non-emissive material are different materials. 50. The first organic layer, the low energy emissive material is set to be 0.1-12 wt%. Wherein: the second organic layer or both further comprise - the sound of the lower energy emissive material 51. An organic light-emitting device comprising: an anode; a cathode; the emissive layer-initiating the emissive layer disposed between the anode and the cathode comprises: - comprising a first organic layer, a phosphorescent material and a first non-emissive material of the first 10-90 wt% of the first organic layer; a concentration of the non-emissive material being the 10-90 wt% of the first organic layer; and a phosphorescence The concentration of the material is the organic layer of the first organic light-distributing material and the second non-emissive material, wherein the concentration of the second phosphorescent material in the second layer Φ 3-μ is Wt0/o; And 1: the concentration of the second non-emissive material in the second organic layer is 128110.doc -13. 200901530 75-97 wt%; ::: the second phosphorescent material in the I layer The concentration is lower than the concentration of the first non-political scale material in the first organic layer; and the phase is _ or not == the second non-emissive material can be the same material: and the weight I ::: Non-emissive material has - - on the third 52. As requested in item 5, where: = The non-emissive material of the same material as the second disc is the same material as the second non-emissive material. 53. The apparatus of claim 51, wherein: ··-break: the optical material and the second The calendering material is a different material, and the non-emissive material is the same material as the second non-emissive material. 54. The device of claim 5, wherein: =1 optical (four) and the second material (four) The material of claim 51 is the same material as the second non-emissive material, wherein: the light-emitting material is the same material as the second phosphorescent material, and Material = a non-emissive material and the second non-emissive material are different materials. 128110.doc -14- 200901530 56. The device of claim 5, wherein: the first organic layer, the second organic layer or both Further comprising a lower energy emissive material, wherein the lower energy emissive material has a concentration of 〇. 1 -12 wt% 〇 57. An organic light-emitting device comprising: an anode; a cathode; An emissive layer between the anode and the cathode, the emissive layer The first organic layer comprising a first phosphorescent material and a first non-emissive material, wherein the concentration of the first phosphorescent material in the first organic layer is 10-90 wt0 / 〇; And the concentration of the first non-emissive material in the s organic layer is 10-90 wt%; a second organic layer comprising a second phosphorescent material and a second non-emissive material, wherein the second I The second phosphorescent material &lt;concentration is W of the 75th to 97th wt / 〇 in the second organic layer; the concentration of the second non-emissive material is "the second phosphorescence in a separate layer The concentration of the material is lower than the concentration of the first phosphorescent material in the first: organic layer; and wherein the S-first non-emissive material and the second non-emissive material are the same as 128110.doc '15-200901530 a material or a different material, and the second light-sensitive material may be a light material and the first organic layer, wherein: the first organic layer or the first organic layer or both further comprise two emissive materials, wherein The lower energy emissivity and the wave degree of the bucket are 〇1 _丨2 wt%. 58. The device of claim 57, wherein: the scale light|± material is the same material as the second scale light material and the non-emissive material is the same material as the second non-emissive material. 59. The device, wherein: the optical material and the second luminescent material are different materials, and the non-emissive material is the same material as the second non-emissive material. 60. The device of claim 57, wherein The material is different from the second material and is made of material. The non-emissive material is different from the second non-emissive material. 61. The device of claim 57, wherein: =1 the optical material is the same material as the second optical material, and the 发射 1 emissive material And the second non-emissive material is a different material 62. The device light-emitting material of claim 57. 63. The device of claim 57 wherein the lower energy emissive material is a firefly wherein the lower energy emissive material is a phosphorescent material. 64. The device of claim 57, which further comprises 0.1-12 wt% of the lower energy layer and in the second organic layer. The first organic layer and the second organic layer emissive material, and the concentration of the first organic lower energy emissive material is 65. The device of claim 57, wherein the first organic layer further comprises The lower 篁 emissive material, the lower energy emission in the first organic layer \ The concentration of the sex ^ is (U_12 wt%, (4) the lower energy emissive material is not present in the second organic layer. The lower two of the 57th I set 'the second organic layer into the step contains the An emissive material is disposed, the lower energy emission in the second organic layer: a concentration of 0. Μ 2 wt% ' and the lower energy emissive material is not present in the first organic layer. And the second organic layer, the non-emissive material, and the apparatus of claim 57, wherein the first portion consists essentially of the first phosphorescent material, the energy-emitting material. 68. An organic light-emitting device, The method comprises: an anode; a cathode; a first organic layer disposed between the anode and the cathode, the first organic layer comprising a -first-scale optical material and a - non-emissive material, X of which The first light-organizing material in the first-organic layer is 3-25%; and von I28110.doc -17- 200901530, the first organic layer is 97% by weight; the concentration of the first non-emissive material in the machine day is 75_ - a second organic layer disposed between the first organic layer and the cathode, the first The organic layer comprises a second phosphorescent material and a radioactive material; #发:, the first organic layer of the middle layer is directly in contact with the first organic layer; the concentration of the second phosphorescent material in the second layer is 1&quot The second non-emissive material in the second organic layer is 90 wt%; and further, wherein the second phosphor in the second organic layer is between the first right 媳恳's spread The concentration of the first photo-curable material is the same as the second luminescent material, and the material: #emissive material and the second non-emissive material are the same material. 70. The device of claim 68, wherein the optical material and the second optical material are different materials, and the non-emissive material is the same material as the second non-emissive material. 71. The device of claim 68, wherein: The dish material is different from the second material, and the material f is a non-emissive material and the second non-emissive material is a different material 128110.doc • 18- 200901530 72. The device of claim 68 , tf?: and the first phosphorescent material and the second phosphorescent material The first non-emissive material and the second non-emissive material are: the same material 73. The device of claim 68, wherein: * the machine layer, the second organic layer or both further comprise -^ low energy emissivity Good 4sL 4 is better than the material 'where the lower energy emissive material is 0.1-12 wt%. Chen 128181.doc 19-