TW201121359A - Organic electroluminescence element - Google Patents

Organic electroluminescence element Download PDF

Info

Publication number
TW201121359A
TW201121359A TW099135058A TW99135058A TW201121359A TW 201121359 A TW201121359 A TW 201121359A TW 099135058 A TW099135058 A TW 099135058A TW 99135058 A TW99135058 A TW 99135058A TW 201121359 A TW201121359 A TW 201121359A
Authority
TW
Taiwan
Prior art keywords
substituted
group
layer
unsubstituted
cathode
Prior art date
Application number
TW099135058A
Other languages
Chinese (zh)
Other versions
TWI538560B (en
Inventor
Yuichiro Itai
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW201121359A publication Critical patent/TW201121359A/en
Application granted granted Critical
Publication of TWI538560B publication Critical patent/TWI538560B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • C09K2211/1011Condensed systems
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1029Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1044Heterocyclic compounds characterised by ligands containing two nitrogen atoms as heteroatoms
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1074Heterocyclic compounds characterised by ligands containing more than three nitrogen atoms as heteroatoms
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1092Heterocyclic compounds characterised by ligands containing sulfur as the only heteroatom
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/18Metal complexes
    • C09K2211/185Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/18Metal complexes
    • C09K2211/186Metal complexes of the light metals other than alkali metals and alkaline earth metals, i.e. Be, Al or Mg
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/30Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values

Abstract

An organic electroluminescence element is provided, which contains an organic layer between an anode and a cathode. The organic layer at least contains at least one luminescent layer, and a cathode-side adjacent layer that is adjacent to the cathode-side of the luminescent layer. The triplet state energy of the cathode-side adjacent layer is smaller than that of the luminescent material of the luminescent layer.

Description

201121359 -----r 一 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種有機電致發光元件(以下有時亦 稱為「有機電激發光元件」、「有機E]L元件」)。 【先前技術】 、有機電致發光元件具有自發A、高速響應等的特長, :被期待應用於平板顯示器(flatpanel display)等,特別 疋報告了將電洞傳輸性的有機薄膜(電洞傳輸層)與電子 傳輸性的有機薄膜(電子傳輸層)積層而成的二層型(積 層型)有機電致發光元件以來’有機電致發光元件作為以 、1〇 V以下的低電壓進行發杨大面積發光元件而備受關 ί 積層型的有機電致發光元件以正極/電洞傳輸層/發光 層/電子傳輸層/貞極作為基本構成,其巾,發光層如上述 j型的情形般’亦可使上述電洞傳輸層或上述電子傳輸 層兼具該功能。 ,於此種有機f致發光元件,為了實現高的發光效率 光性摻如專利文獻1中’作為與璘光發 右且古-&quot;* 口而構成磷光材料的主體材料,已大量提出 香二ripyrene)骨架或蒽(anthracene)骨架的縮合芳 奮族裱化合物。 d而該提案的縮合芳香族環化合物均是三重態能量 側鄰=將=重祕量小的化合驗發光層的陰極 極側鄰二::、:揭示亦無暗示。其原因在於’發光層的陰 接曰亦破稱為激發抑制層,就使發光效率提高的方 201121359 ~J V/*. 面而言,較理想的是大於發光層中產生的能量(陰極側鄰 接層的三重態能量較大)(參照專利文獻2 )。 此處,圖1A為表示發光層6與陰極側鄰接層7的三 重態能量的關係的圖,陰極側鄰接層7的三重態能量(τι) 小於發光層6的發光材料的三重態能量(Τ1),因此,能量 容易自發光層6向陰極侧鄰接層7移動,發光層6的發光 效率下降。相對於此,圖1Β +,由於發光層6的發^材 料的三重態能量(Τ1)相對於陰極側鄰接層7的三重態能 量(Τ1)為相同水準(ievel)以上,能量不易自發光層6 向陰極侧鄰接層7移動,發光層6的發光效率提高。 另一方面,若採用具有大於發光層的發光材料的三重 態月b里的二重態此1的陰極侧鄰接層,雖可實現發光層的 發光效率的提高,但有驅動耐久性惡化的問題。 因此現狀為,期望儘快提供一種可實現高亮度及高電 流密度下的發光效率的提高與驅動耐久性的提高的有機電 致發光元件。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2009-16693號公報 [專利文獻2]日本專利第3992929號公報 【發明内容】 本發明的目的在於提供一種可實現高亮度及高電流密 度下的發光效率的提高與驅動耐久性的提高的有機電致發 光元件。 201121359 jozojpn 贫,決上述課題’本發明者們反覆進行了努力研 陰極i鄰it ^有至少包含於發光層的陰極側鄰接的 ^及於該陰極侧鄰接層的陰極側鄰接的電子 鄰^二_機層的有機電致發光元件中m述陰極側 &amp;旦θ的二重態能量小於上述發光層的發光材料的三重態 構成’則或許因電子注入性提高、發光層内: 化i而意外可獲得高亮度及高電流密度下 一 双年叔同、並且驅動耐久性亦優異的有機電致發光 元件。 θ本發明是基於本發明者的上述見解,用以解決上述課 題的方法如下。即, &lt; 1 &gt; 一種有機電致發光元件,其特徵在於:其是於陽 極與陰極之間具有至少包含至少—層發光層、及於該發光 層的陰極侧鄰接的陰極侧鄰接層的有機層, 上述陰極側鄰接層的三重態能量小於上述發光層的發 光材料的三重態能量。 &lt;2&gt;如上述&lt;ι&gt;所記載的有機電致發光元件,其中 有機層更包含於陰極側鄰接層的陰極側鄰接的電子傳輸 層, 上述陰極侧鄰接層的三重態能量小於上述電子傳輸層 的三重態能量。 &lt;3&gt;如上述&lt;1&gt;所記載的有機電致發光元件,其中 陰極側鄰接層含有縮合芳香族環化合物。 &lt;4&gt;如上述&lt;1&gt;所記載的有機電致發μ件,其中 5 201121359 陰極侧鄰接層含有具有下述通式(II)所表示的芘衍生物 骨架的化合物、及具有下述通式(I)所表示的蒽衍生物骨 架的化合物的至少一種,[Technical Field] The present invention relates to an organic electroluminescence device (hereinafter sometimes referred to as "organic electroluminescence device", "organic E") L component"). [Prior Art] The organic electroluminescent element has the characteristics of spontaneous A, high-speed response, etc., and is expected to be applied to a flat panel display, etc., in particular, an organic thin film that transmits a hole is reported (a hole transport layer) A two-layer type (stacked type) organic electroluminescence device in which an organic thin film (electron transport layer) is laminated with an electron-transporting organic thin film, and the organic electroluminescence device is used as a low voltage of 1 〇V or less. The organic light-emitting element of the laminated type is mainly composed of a positive electrode/hole transport layer/light-emitting layer/electron transport layer/dippole, and the light-emitting layer is as in the case of the above-described j-type. The hole transport layer or the electron transport layer may also have the function. In order to achieve high luminous efficiency, such an organic light-emitting element has been scented as a host material of a phosphorescent material in the patent document 1 as a light-emitting and right---* mouth. A ripyrene) skeleton or anthracene skeleton of a condensed aromatic Fen 裱 compound. d. The proposed condensed aromatic ring compounds are all triplet energy side neighbors = will be = a small amount of small amount of the chemiluminescent layer of the cathode side of the luminescent layer::,: reveal no hint. The reason is that the 'anthracene of the light-emitting layer is also called an excitation suppression layer, and the side of the 201121359-JV/*. surface which is improved in luminous efficiency is preferably larger than the energy generated in the light-emitting layer (the cathode side is adjacent). The triplet energy of the layer is large (see Patent Document 2). Here, FIG. 1A is a view showing the relationship between the triplet energy of the light-emitting layer 6 and the cathode-side adjacent layer 7, and the triplet energy (τι) of the cathode-side adjacent layer 7 is smaller than the triplet energy of the light-emitting material of the light-emitting layer 6 (Τ1) Therefore, energy is easily moved from the light-emitting layer 6 to the cathode-side adjacent layer 7, and the light-emitting efficiency of the light-emitting layer 6 is lowered. On the other hand, in FIG. 1A, since the triplet energy (Τ1) of the light-emitting layer 6 is equal to or higher than the triplet energy (Τ1) of the cathode-side adjacent layer 7, the energy is not easily self-luminous. 6 Moving toward the cathode side adjacent layer 7, the luminous efficiency of the light-emitting layer 6 is improved. On the other hand, when the cathode-side adjacent layer having the doublet state in the triplet month b of the light-emitting material of the light-emitting layer is used, the light-emitting efficiency of the light-emitting layer can be improved, but the driving durability is deteriorated. Therefore, it is desired to provide an organic electroluminescence device which can improve the luminous efficiency at high luminance and high current density and improve the driving durability as soon as possible. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent Publication No. 2009-196693 [Patent Document 2] Japanese Patent No. 3992929 SUMMARY OF THE INVENTION An object of the present invention is to provide a high brightness An organic electroluminescence device having improved luminous efficiency at high current density and improved driving durability. 201121359 Jozojpn is poor, and the above-mentioned problem has been repeated. The present inventors have made an effort to study the cathodes of the cathodes, which are adjacent to the cathode side of the light-emitting layer, and the electrons adjacent to the cathode side of the cathode-side adjacent layer. In the organic electroluminescent device of the organic layer, the triplet energy of the cathode side & dan θ is smaller than the triplet state of the luminescent material of the luminescent layer, which may be due to an increase in electron injectability and an illuminating layer. An organic electroluminescence device having high brightness and high current density for the next two years and excellent in driving durability can be obtained. θ The present invention is based on the above findings of the present inventors, and the method for solving the above problems is as follows. That is, an organic electroluminescence device characterized in that it has at least a layer of a light-emitting layer between the anode and the cathode, and a cathode-side adjacent layer adjacent to the cathode side of the light-emitting layer. In the organic layer, the triplet energy of the cathode side adjacent layer is smaller than the triplet energy of the light emitting material of the light emitting layer. The organic electroluminescence device according to the above-mentioned <1>, wherein the organic layer further includes an electron transport layer adjacent to a cathode side of the cathode side adjacent layer, and the triplet energy of the cathode side adjacent layer is smaller than the electron The triplet energy of the transport layer. The organic electroluminescence device according to the above-mentioned <1>, wherein the cathode-side adjacent layer contains a condensed aromatic ring compound. The organic electroluminescence device according to the above-mentioned <1>, wherein the 5 201121359 cathode-side adjacent layer contains a compound having an anthracene derivative skeleton represented by the following formula (II), and has the following At least one of the compounds of the anthracene derivative skeleton represented by the formula (I),

Rl R8Rl R8

通式(I) 其中,上述通式(I)中,Ar1及Ar2分別獨立為由經 取代或未經取代的核碳數6〜20的芳香族環所衍生的基。 上述芳香族環可經1個或2個以上的取代基取代。上述取 代基是選自經取代或未經取代的核碳數6〜5〇的芳基、經 取代或未經取代的碳數1〜5〇的烷基、經取代或未經取代 的碳數3〜50的環烷基、經取代或未經取代的碳數丨〜5〇 的烷氧基、經取代或未經取代的核碳數6〜5〇的芳烷基、 經取代或未經取代的核原子數5〜5〇的芳氧基、經取代或 未經取代的核原子數5〜50的芳硫基、經取代絲經取代 的石反數1〜50的烷氧基羰基、經取代或未經取代的矽烷 基,基、«原子、氰基、及。於上述芳香族 環經2個以上的取代絲代時,上述取絲可相同亦可不 同’鄰接的取代基彼此亦可相轉結而形聽和或不飽和 201121359 iozwpu 的環狀結構。 R1〜R8是選自氫原子、經取代或未經取代的核碳數6 〜50的芳基、經取代或未經取代的核原子數5〜50的雜芳 基、經取代或未經取代的碳數1〜50的烷基、經取代或未 經取代的碳數3〜50的環烧基、經取代或未經取代的碳數 1〜50的烧氧基、經取代或未經取代的碳數6〜5〇的芳院 基、經取代或未經取代的核原子數5〜50的芳氧基、經取 代或未經取代的核原子數5〜5〇的芳硫基、經取代或未經 取代的碳數1〜50的烷氧基羰基、經取代或未經取代的矽 烷基、羧基、_素原子、氰基、硝基及羥基。另外,鄰接 的取代基彼此亦可相互鍵結而形成飽和或不飽和的環狀結 構。In the above formula (I), Ar1 and Ar2 are each independently a group derived from a substituted or unsubstituted aromatic ring having 6 to 20 carbon atoms. The above aromatic ring may be substituted with one or two or more substituents. The above substituent is an optionally substituted or unsubstituted aryl group having 6 to 5 fluorene, a substituted or unsubstituted alkyl group having 1 to 5 Å, a substituted or unsubstituted carbon number. a cycloalkyl group of 3 to 50, a substituted or unsubstituted alkoxy group having a carbon number of 丨~5 、, a substituted or unsubstituted aralkyl group having a core carbon number of 6 to 5 Å, substituted or not a substituted aryloxy group having a nuclear atom number of 5 to 5 Å, a substituted or unsubstituted arylthio group having 5 to 50 atomic number of the core, a substituted alkoxycarbonyl group having a reversed number of 1 to 50, Substituted or unsubstituted decyl, aryl, «atomic, cyano, and. When the aromatic ring is substituted by two or more substituted filaments, the above-mentioned filaments may be the same or different. The adjacent substituents may also be converted to each other to form an ortho-and-unsaturated ring structure of 201121359 iozwpu. R1 to R8 are an aryl group selected from a hydrogen atom, a substituted or unsubstituted nucleus having a carbon number of from 6 to 50, a substituted or unsubstituted heteroaryl group having a core number of 5 to 50, substituted or unsubstituted Alkyl having 1 to 50 carbon atoms, substituted or unsubstituted cycloalkyl group having 3 to 50 carbon atoms, substituted or unsubstituted alkoxy group having 1 to 50 carbon atoms, substituted or unsubstituted a aryloxy group having a carbon number of 6 to 5 Å, a substituted or unsubstituted aryloxy group having a core number of 5 to 50, a substituted or unsubstituted arylthio group having a core number of 5 to 5 Å, A substituted or unsubstituted alkoxycarbonyl group having 1 to 50 carbon atoms, a substituted or unsubstituted alkylene group, a carboxyl group, a sulfonium atom, a cyano group, a nitro group, and a hydroxyl group. Further, adjacent substituents may be bonded to each other to form a saturated or unsaturated cyclic structure.

((L)m-ArIe)nb 通式(II) ㈣ίΓ,上述通式(Π)巾’ ^及#分別表示經取 或未=取代的核碳數6〜50的芳香族環基。 取代經取代或未經取代的伸苯基、經取代或未經 經取偏II基、練代或未經取代的料基或經取代或未 生伸二笨幷石夕雜環戊二婦基(dibenz〇sil〇lylene)。 0〜2的整數,nb為卜4的整數,$為〇〜2的整 201121359 \J*0 數’ t為〇〜4的整數。 另外,L或Arla鍵結於芘的1位〜5位的任一個,L 或Ar2a鍵結於芘的6位〜10位的任一個。 其中,於nb + t為偶數時,Arla、Ar2a、L滿足下述(】) 或(2) 〇 (1) Arla#Ar2a (此處#表示不同結構的基)((L)m-ArIe)nb Formula (II) (IV), wherein the above formula (Π) towels '^ and # respectively represent an aromatic ring group having a core carbon number of 6 to 50 which is taken or not substituted. Substituting a substituted or unsubstituted phenylene group, a substituted or unsubstituted II group, a modified or unsubstituted substrate, or a substituted or non-extended smectite Dibenz〇sil〇lylene). An integer of 0 to 2, nb is an integer of 4, and $ is an integer of 〇~2. 201121359 \J*0 number 't is an integer of 〇~4. Further, L or Arla is bonded to any of the 1st to 5th positions of the oxime, and L or Ar2a is bonded to any of the 6th to the 10th positions of the oxime. Wherein, when nb + t is an even number, Arla, Ar2a, L satisfy the following (]) or (2) 〇 (1) Arla#Ar2a (where # represents a base of a different structure)

(2) Arla=Ar2W (2-1 ) m#s 及/或 nb#t,或 (2-2) m=s 且 nb = t 時, (2-2-1 ) L或花分別鍵結於Arla及Ar2a上的不同鍵多士 位置,或 π (2-2-2)於L或芘鍵結於Arla及Ar2a上的相同鍵結 位置時,L或Arla&amp;Ar2a於芘上的取代位置為!位與6位、 或2位與7位的情形不存在。 如上述&lt;i&gt;所記載的有機電致發光元件,其中 陰極側鄰接層的厚度為1 nm〜1〇 nm。 [發明的效果] 明如下 古據本發明,可解決先前的問題,可提供—種能實現 ^效率與驅動耐久_提高财機電致發光元件。 易僧:二本ί明之上述和其他目的、特徵和優點能更明顯 明It Χ舉較佳實施例’並配合所賴式,作詳細說 【實施方式】 (有機電致發光元件) 8 201121359 本lx月的有機電致發光元件是於陽極與陰極之間具有 至少包含至少—層發光層、及於該發光層的陰極側鄰接的 陰極側鄰接層的有制,且具有於上述陰湖鄰接層的陰 極側鄰接的電子傳輸層,進而視需要具有其他層。 本發明的特徵在於:上述陰極側鄰接層的三重態能量 小於上述發光層的發光材料的三錢能量。若上述陰極側 钟接層的—重ΙΐΆΐ大於上述發光層的發光材料的三重態 月&amp;里,則雖然有利於防止激子擴散,但通常三重態能量大 的傳輸電子時通過的電子親和力(electr〇n:ff論y) 的能量水準(energy level)有時亦較高,有時會成為自電 子傳輸層向發光層的電荷的㈣。再者,由於發光層的主 ,材料的三重態能量大於發光層的發光材料的三^態能 量’故與__接層的三錢能量的大小關係只要^ 光層的發光材料的三重態能量來進行比較便足夠。 另外,上述陰極側鄰接層的三重態能量較佳為小於上 述電子傳輸層的三重態能量。若上述陰極側鄰接層的三重 態能量大於上述電子傳輸層的三重態能量,則於來自發光 層的激子擴散而飛騎接層的激衫時,有時於電子傳輪 層中激子被消耗而效率下降。 j 因此,陰極側鄰接層、發光層的發光材料、電子傳輸 層三者中’陰極側鄰接層的三重態能量成為最小的值。月’』 此處’有機電致發光元件中的上述陰極側鄰接層 光層的發光材料及電子傳輸層的三重態能量均可(丨)保 有機電致發光元件的狀態而使用傾斜切割技術,將有機電 201121359 致發光元件傾斜切割後,使用顯微光致發光(photo Luminescence,pL)法,根據各層的混合的江光譜的差 分來推定三重態能量;或(2)藉由進行飛行時間式二次離 子質譜(Time of fight-Secondary Ion Mass Spectrometry, TOF'sms)料表面分析來較分子式後,合賴分子並 根據單膜而求出三重態能量的方法等來進行測定。 &lt;發光層&gt; 關於上述發光層,其材料、形狀、構造、大小等並無 特別限制,可根據目的而適當選擇,例如,上述形狀可^ 舉膜狀、片狀等,另外’其平面形狀可列舉四角形、圓形 等,上述構造可列舉單層構造、積層構造等,上述大小可 根據用途等而適當選擇。 、關於上述發光層的材料,就可獲得來自三重態激子的 發光(麟光)的觀點而言’適合的是磷光發光材料與主體 化合物。 曰,者,上述發光層亦可含有兩種以上的磷光發光材料 以提高顏色純度、或擴大發光波長範圍。 -磷光發光材料- 上述鱗光發光材料並無特別限制,可根據目的而適當 選擇’例如可列舉含有過渡金屬原子、齡(lanthanoid) 原子的錯合物等。 上述過渡金屬原子例如可列舉釕(ruthenium)、錄 rhodium)^(palladium)&gt;^|(tungstate)&gt;^(rhenium) ^ 鐵、銀(iridium)、翻等。該些中,較佳為鍊、 201121359 JU^UJpil 銀、始,特佳為銀、始。 上述鑭系原子例如可列舉鑭(lanthanum )、錦 (cerium )、镨(praseodymium )、鈥(neodymium )、釤 (samarium )、销(europium )、亂(gadolinium )、铽 (terbium )、鏑(dysprosium )、鈥(holmium )、铒(Erbium )、 链(thulium )、鏡(ytterbium )、鑛(lutecium )等。該些 中,特佳為鈥、銪、釓。 上述錯合物的配位基例如可列舉:G.Wilkinson等著的(2) Arla=Ar2W (2-1) m#s and / or nb#t, or (2-2) m=s and nb = t, (2-2-1) L or flower are respectively bonded to When the different bond torsion positions on Arla and Ar2a, or π (2-2-2) at the same bonding position where L or ytterbium is bonded to Arla and Ar2a, the substitution position of L or Arla&amp;Ar2a on 芘 is ! Bits with 6 bits, or 2 bits and 7 bits do not exist. The organic electroluminescence device according to the above <1>, wherein the cathode-side adjacent layer has a thickness of 1 nm to 1 〇 nm. [Effects of the Invention] As described above, according to the present invention, the prior problems can be solved, and it is possible to provide an energy-efficient electroluminescent element capable of achieving efficiency and driving durability. The above and other objects, features and advantages of the present invention will become more apparent. It will be described in detail with reference to the preferred embodiment of the present invention. [Embodiment] (Organic Electroluminescent Element) 8 201121359 The lx month organic electroluminescent device has a cathode side adjacent layer including at least a layer of light emitting layer and a cathode side adjacent to the cathode side of the light emitting layer between the anode and the cathode, and has an adjacent layer of the above-mentioned Yin Lake. The electron transport layer adjacent to the cathode side, and optionally other layers. The present invention is characterized in that the triplet energy of the cathode side adjacent layer is smaller than the triple energy of the light emitting material of the light emitting layer. If the triplet of the cathode side wiring layer is larger than the triplet state of the luminescent material of the light-emitting layer, although it is advantageous to prevent exciton diffusion, the electron affinity which is usually transmitted when electrons are transferred with a large triplet energy ( The energy level of electr〇n:ff y) is sometimes high, and sometimes it becomes the charge from the electron transport layer to the light-emitting layer (4). Furthermore, due to the main layer of the luminescent layer, the triplet energy of the material is greater than the tri-state energy of the luminescent material of the luminescent layer, so the relationship between the three energy of the __ layer and the ternary energy of the __ layer is as long as the triplet energy of the luminescent material of the optical layer It is enough to compare. Further, the triplet energy of the cathode side adjacent layer is preferably smaller than the triplet energy of the electron transport layer. If the triplet energy of the cathode side adjacent layer is greater than the triplet energy of the electron transport layer, when the excitons from the light emitting layer diffuse and fly over the contact layer, the excitons are sometimes in the electron transport layer. Consumption and efficiency decline. Therefore, the triplet energy of the cathode side adjacent layer in the cathode side adjacent layer, the light emitting material of the light emitting layer, and the electron transport layer becomes the smallest value. In the organic electroluminescent device, the luminescent material of the cathode-side adjacent layer and the triplet energy of the electron-transporting layer can use the oblique cutting technique in the state of the organic electroluminescent device. Organic Electric 201121359 After the oblique illumination of the illuminating element, the photo-luminescence (pL) method is used to estimate the triplet energy according to the difference of the mixed river spectra of the layers; or (2) by the flight time type II The surface analysis of the time of fight-Secondary Ion Mass Spectrometry (TOF'sms) is carried out by comparing the molecular formula and the method of determining the triplet energy from a single membrane. &lt;Light-emitting layer&gt; The material, shape, structure, size, and the like of the light-emitting layer are not particularly limited, and may be appropriately selected depending on the purpose. For example, the shape may be a film shape, a sheet shape, or the like, and The shape may be a square shape or a circular shape. The above structure may be a single layer structure or a laminated structure, and the above-described size may be appropriately selected depending on the use and the like. Regarding the material of the above-mentioned light-emitting layer, from the viewpoint of obtaining light emission from a triplet exciton (the light of the light), a phosphorescent light-emitting material and a host compound are suitable. Alternatively, the light-emitting layer may contain two or more phosphorescent materials to increase the color purity or to broaden the wavelength range of the light. - Phosphorescent material - The above-mentioned luminescent material is not particularly limited, and may be appropriately selected depending on the purpose. For example, a complex compound containing a transition metal atom or a lanthanoid atom may be mentioned. Examples of the transition metal atom include ruthenium, rhodium) (palladium) &gt;^|(tungstate)&gt;^(rhenium)^ iron, iridium, and the like. Among these, it is preferably chain, 201121359 JU^UJpil silver, the beginning, especially good for silver, the beginning. Examples of the above lanthanoid atom include lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, and dysprosium. ), holmium, Erbium, thulium, ytterbium, lutecium, and the like. Among them, the best ones are 鈥, 铕, 釓. The ligand of the above complex compound is exemplified by G. Wilkinson et al.

Comprehensive Coordination Chemistry ( Pergamon Press 公 司 1987 年發行)、H.Yersin 著的「Photochemistry and Photophysics of Coordination Compounds j Springer-Verlag 公司1987年發行、山本明夫著的「有機金屬化學_基礎與 應用-」(裳華房公司1982年發行)等中記載的配位基等。 具體的配位基可列舉鹵素配位基(較佳為氯配位基)、 方香族石反%配位基(例如環戊二稀陰離子(CyCl〇pentadjene anion)、苯陰離子或萘基陰離子等)、含氮雜環配位基(例 如本基β比咬(phenyl pyridine )、苯幷喧淋 (benzoquinoline )、羥喹啉(quin〇Un〇1 )、聯吡啶 (bipyridyl)、或啡琳(phenanthroiine )等)、二酮配位基 (例如乙酸丙酮等)' 敌酸配位基(例如乙酸配位基等)、 醇化物(alcoholate)配位基(例如酚化物配位基等)、一 氧化碳配位基、異腈基(is〇nitrile)配位基、氰基配位基 等。該些中,特佳為含氮雜環配位基。 上述錯合物可於化合物中含有〗個過渡金屬原子,另 201121359 外,亦可為含有2個以上的過渡金屬原子的多核錯合物 (polynuclear complex)。亦可同時含有不同種類的金屬原 子。該些中,磷光發光材料例如可列舉下述化合物,但不 限定於該些化合物。Comprehensive Coordination Chemistry (released by Pergamon Press in 1987) and H.Yersin, "Photochemistry and Photophysics of Coordination Compounds j Springer-Verlag, Ltd., issued in 1987, Yamamoto Akira, "Organic Metal Chemistry_Basic and Application--" The ligands described in the house company's 1982 issue, etc. Specific ligands may include a halogen ligand (preferably a chlorine ligand), a Fangxiang stone anti-coordination group (for example, a cyclopentane anion (CyCl〇pentadjene anion), a benzene anion or a naphthyl anion). Etc., a nitrogen-containing heterocyclic ligand (eg, phenyl pyridine, benzoquinoline, quin〇Un〇1, bipyridyl, or morphine) (phenanthroiine), etc., a diketone ligand (eg, acetone acetate, etc.), a diacid ligand (eg, an acetate ligand, etc.), an alcoholate ligand (eg, a phenolate ligand, etc.), A carbon monoxide ligand, an isnitrile ligand, a cyano ligand, and the like. Among these, a nitrogen-containing heterocyclic ligand is particularly preferred. The above complex compound may contain a transition metal atom in the compound, and may be a polynuclear complex containing two or more transition metal atoms in addition to 201121359. It can also contain different kinds of metal atoms. Among these, examples of the phosphorescent material include, but are not limited to, the following compounds.

1212

201121359 JOZDjpiI201121359 JOZDjpiI

13 20112135913 201121359

作為上述含有銥的錯合物的磷光發光材料並無特別限 制,可根據目的而適當選擇,較佳為下述通式(2)、通式 (3)及通式(4)中的任一個所表示的化合物。The phosphorescent material to be used as the complex compound containing ruthenium is not particularly limited, and may be appropriately selected according to the purpose, and is preferably any one of the following general formula (2), general formula (3), and general formula (4). The compound represented.

通式(2) 14 201121359 36263pitGeneral formula (2) 14 201121359 36263pit

通式(3)General formula (3)

通式(4) 其中,上述通式(2)、通式(3)及通式(4)中,η 表示1〜3的整數。Χ-Υ表示雙牙配位基。環Α表示可含 有氮原子、硫原子及氧原子中的任一個的環結構。R11表示 取代基,ml表示0〜6的整數。於ml為2以上時,鄰接 的R11彼此亦可鍵結而形成可含有氮原子、硫原子及氧原 子中的任一個的環,該環可進一步經取代基取代。R12表示 取代基,m2表示0〜4的整數。於m2為2以上時,鄰接 的R12彼此亦可鍵結而形成可含有氮原子、硫原子及氧原 子中的任一個的環,該環可進一步經取代基取代。再者, R11與R12亦可鍵結而形成可含有氮原子、硫原子及氧原子 中的任一個的環,該環可進一步經取代基取代。 15 201121359 上述環A表示可含有氮原子、硫原子及氧原子中的任 一個的環結構,可合適地列舉5員環、6員環等。該環可 經取代基取代。 X-Y表示雙牙配位基,可合適地列舉雙牙的單陰離子 性配位基等。 上述雙牙的單陰離子性配位基例如可列舉:Π比σ定甲酸 鹽(picolinate,pic )、乙醯丙酮酸鹽(acetylacetonate,acac )、 一(一甲基乙酿基)甲烧化物(dipivaloylmethanate,第三丁 基acac)等。 上述以外的配位基例如可列舉Lamansky等人的國際 公開第2002/15645號手冊的89頁〜91頁所記載的配位基。 上述R11及R12的取代基並無特別限制,可根據目的而 適當選擇,例如表示鹵素原子、烷氧基、胺基、烷基、環 烷基、可含有氮原子或硫原子的芳基、可含有氮原子或硫 原子的芳氧基’該些基亦可進一步經取代。 上述R11及R12中相互鄰接的基亦可彼此鍵結而形成 可含有氮原子、硫原子或氧原子的環,可合適地列舉5員 環、6員環等。該環可進一步經取代基取代。 上述通式(2)、通式(3)及通式(4)中的任一個所 表示的具體化合物例如可列舉下述化合物,但不限定於兮 些化合物。 16 201121359 36263pii'In the above formula (2), formula (3) and formula (4), η represents an integer of 1 to 3. Χ-Υ indicates a double tooth ligand. The ring Α represents a ring structure which may contain any one of a nitrogen atom, a sulfur atom and an oxygen atom. R11 represents a substituent, and ml represents an integer of 0 to 6. When ml is 2 or more, adjacent R11 may be bonded to each other to form a ring which may contain any one of a nitrogen atom, a sulfur atom and an oxygen atom, and the ring may be further substituted with a substituent. R12 represents a substituent, and m2 represents an integer of 0 to 4. When m2 is 2 or more, adjacent R12 may be bonded to each other to form a ring which may contain any one of a nitrogen atom, a sulfur atom and an oxygen atom, and the ring may be further substituted with a substituent. Further, R11 and R12 may be bonded to form a ring which may contain any one of a nitrogen atom, a sulfur atom and an oxygen atom, and the ring may be further substituted with a substituent. 15 201121359 The above ring A represents a ring structure which may contain any one of a nitrogen atom, a sulfur atom and an oxygen atom, and examples thereof include a 5-membered ring and a 6-membered ring. This ring may be substituted with a substituent. X-Y represents a bidentate ligand, and a monoanionic ligand of a double tooth or the like can be suitably cited. The monoanionic ligand of the above-mentioned double teeth may, for example, be a picolinate (pic), an acetylacetonate (acac) or a mono(meth)ethyl sulphide. (dipivaloylmethanate, third butyl aac) and the like. The ligand other than the above may be, for example, a ligand described in pages 89 to 91 of the Handbook No. 2002/15645 of Lamansky et al. The substituent of R11 and R12 is not particularly limited and may be appropriately selected according to the purpose, and examples thereof include a halogen atom, an alkoxy group, an amine group, an alkyl group, a cycloalkyl group, and an aryl group which may contain a nitrogen atom or a sulfur atom. The aryloxy group containing a nitrogen atom or a sulfur atom may further be substituted. The groups adjacent to each other in the above R11 and R12 may be bonded to each other to form a ring which may contain a nitrogen atom, a sulfur atom or an oxygen atom, and a 5-membered ring or a 6-membered ring may be suitably used. This ring may be further substituted with a substituent. Specific examples of the specific compound represented by any one of the above formula (2), formula (3) and formula (4) include, but are not limited to, the following compounds. 16 201121359 36263pii'

17 201121359 36263pif (卜8)17 201121359 36263pif (卜8)

(M2)(M2)

α-ιο&gt;--ιο&gt;

α-ΐ4)Ϊ́-ΐ4)

&lt;Μ5)&lt;Μ5)

(HID(HID

18 201121359 36263ρΐί18 201121359 36263ρΐί

(Η 7)(Η 7)

19 201121359 (1-24) (ί™2β)19 201121359 (1-24) (ίTM2β)

(1-25)(1-25)

上述磷光發光材料的其他例可列舉如下化合物。 201121359Other examples of the above phosphorescent material include the following compounds. 201121359

21 201121359 36263pif21 201121359 36263pif

DHO D-9DHO D-9

D-11D-11

D-12 D-13 D -14D-12 D-13 D -14

D—15 D-16D-15 D-16

22twenty two

201121359 JOZO^piI201121359 JOZO^piI

關於上述磷光發光材料的含量,相對於形成上述發光 層的所有化合物重量,較佳為0.5 wt% (重量百分比)〜 30 wt%,更佳為0.5 wt%〜20 wt%,進而佳為3 wt%〜10 wt%。 若上述含量小於0.5 wt%,則有時發光效率變小,若 上述含量超過30 wt%,則有時會由於磷光發光材料自身的 締合而導致發光效率下降。 -主體化合物- 上述主體化合物可使用電洞傳輸性優異的電洞傳輸性 主體化合物及電子傳輸性優異的電子傳輸性主體化合物。 23 201121359 --電洞傳輸性主體化合物__ 上述電洞傳輸性主體化合物並無特別限制,可根據目 的而適當選擇,例如可列舉 &gt;比咯(pyrrole)、吲哚(indole)、 吟嗤(carbazole )、氮雜,π朵(azajnd〇ie )、氮雜 π卡口坐 (azacarbazole)、吡唑(pyraz〇le)、咪唑(imidaz〇le)、聚 芳基烷烴(poly aryl alkane)、吡唑啉(pyrazoline)、吡唑 琳嗣(pyrazolone)、苯二胺(phenylene diamine)、芳基胺、 胺基取代查酮(chalcone )、苯乙烯基蒽(styryl anthracene )、第酮(fluorenone )、腙(hydraz〇ne )、二苯乙 烯(stilbene)、矽氮烷(Siiazane)、芳香族三級胺化合物、 苯乙烯基胺化合物、芳香族二次曱基系(dimethylidyne) 化合物、卟啉(porphyrin)系化合物、聚矽烷系化合物、 聚(N-乙烯基咔唑)、苯胺系共聚物、噻吩低聚物(thi〇phene oligomer)、聚噻吩等的導電性高分子低聚物、有機矽烷、 碳膜或該些化合物的衍生物等。 該些化合物中,較佳為吲哚衍生物、咔唑衍生物、氮 雜吲哚衍生物、氮雜咔唑衍生物、芳香族三級胺化合物、 嗟吩衍生物,更佳為分子内具有朵骨架、味峻骨架、氮 雜吲哚骨架、氮雜咔唑骨架、或芳香族三級胺骨架的化合 物’特佳為具有咔唑骨架的化合物。 另外,本發明中,亦可使用將上述主體化合物的一部 分或全部的氫取代為氘的主體材料(日本專利特願 2008-126130號說明書、曰本專利特表2〇〇4-5155〇6號公 報)。 24 201121359 36263pit 作為此種電洞傳輸性主體化合物的具體化合物例如可 列舉下述化合物,但不限定於該些化合物。The content of the above phosphorescent material is preferably 0.5 wt% to 30 wt%, more preferably 0.5 wt% to 20 wt%, and even more preferably 3 wt%, based on the weight of all the compounds forming the above-mentioned light-emitting layer. %~10 wt%. When the content is less than 0.5% by weight, the light-emitting efficiency may be small. When the content is more than 30% by weight, the light-emitting efficiency may be lowered due to the association of the phosphorescent material itself. - Host compound - As the host compound, a hole transporting host compound having excellent hole transport properties and an electron transporting host compound having excellent electron transport properties can be used. 23 201121359 - Hole-transporting host compound __ The above-mentioned hole-transporting host compound is not particularly limited and may be appropriately selected according to the purpose, and examples thereof include pyrole, indole, and oxime. (carbazole), aza, π (azajnd〇ie), azacarbazole, pyrazol, imidaz〇le, poly aryl alkane, Pyrazoline, pyrazolone, phenylene diamine, arylamine, chalcone, styryl anthracene, fluorenone , hydraz〇ne, stilbene, siiazane, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidyne compounds, porphyrins a porphyrin compound, a polydecane compound, a poly(N-vinylcarbazole), an aniline copolymer, a thiene phene oligomer, a conductive polymer oligomer such as polythiophene, or an organic decane , carbon film or the compounds Biology. Among these compounds, preferred are an anthracene derivative, a carbazole derivative, an azaindole derivative, an azacarbazole derivative, an aromatic tertiary amine compound, and a porphin derivative, and more preferably have an intramolecular A compound having a skeleton, a taste skeleton, an azaindole skeleton, an azacarbazole skeleton, or an aromatic tertiary amine skeleton is particularly preferably a compound having a carbazole skeleton. Further, in the present invention, a host material in which a part or all of hydrogen of the above-mentioned host compound is substituted with ruthenium may be used (Japanese Patent Application No. 2008-126130, Japanese Patent Application No. 2〇〇4-5155〇6) Bulletin). 24 201121359 36263pit Specific examples of such a hole transporting host compound include, but are not limited to, the following compounds.

2525

201121359 JOZOjpiI H-9201121359 JOZOjpiI H-9

H-11H-11

26 201121359 JO^C)3plt H-17 H_1826 201121359 JO^C)3plt H-17 H_18

27 201121359 H-24 H-2527 201121359 H-24 H-25

28 201121359 關於上述電洞傳輸性主體化合物的含量,相對於形成 上述發光層的所有化合物重量,較佳為10 wt%〜99928 201121359 The content of the above-mentioned hole transporting host compound is preferably 10% by weight to 999 based on the weight of all the compounds forming the above-mentioned light emitting layer.

Wt% ’更佳為20 wt%〜99.5 wt% ’進而佳為30 wt%〜99 wt% ° -電子傳輸性主體化合物- 上述電子傳輸性主體化合物並無特別限制,可根據目 的而適當選擇’例如可列舉:Π比咬、嘴。定()、 三嗪(triazine )、咪唑、吡唑、三唑(triaz〇le )、噁唑 (oxazole )、噁二唑(oxadiazole )、第酮、蒽醌二甲烷 (anthraquinone dimethane )、蒽酮(anthrone )、二苯酿 (diphenylquinone)、二氧化噻喃(thi〇pyran di〇xide)、碳 二醯亞胺(carbodiimide )、亞苐基甲烷( methane)、二苯乙烯基d比嗅(distyryipyrazine)、氟取代芳 香族化合物、萘茈(naphthalene perylene)等的雜環四叛 酸酐、酞菁(phthalocyanine)或該些化合物的衍生物(可 與其他%形成縮合環)’ 8-經啥淋衍生物的金屬錯合物,金 屬酞菁,以苯幷噁唑、苯幷噻唑為配位基的金屬錯合物所 代表的各種金屬錯合物等。 上述電子傳輸性主體化合物例如可列舉金屬錯合物、 唑何生物(苯幷咪唑衍生物、咪唑吡啶(imidaz〇pyridine) 衍生物等)' 嗪衍生物(吡啶衍生物、嘧啶衍生物、三嗪衍 生物等)等。其中,本發明中就耐久性方面而言,較佳為 金屬錯合物化合物。上述金屬錯合物化合物更佳為具有配 位於金屬的含有至少—錢肝或氧原子或硫料的配位 29 201121359 基的金屬錯合物。 金屬錯合物中的金屬離子並無特別限制,較佳為鈹離 子、鎂離子、鋁離子、鎵離子、鋅離子、銦離子、錫離子、 鉑離子或鈀離子,更佳為鈹離子、鋁離子、鎵離子、鋅離 子、鉑離子或鈀離子,進而佳為鋁離子、鋅離子或鈀離子。 關於上述金屬錯合物中所含的配位基,已知有各種公 知的配位基,例如可列舉「Photochemistry and ph〇t〇卿_ of Coordination Compounds」(Springer-Verlag 公司, H=in著’㈣年發行)、「有機金屬鱗顧與應用·」 (=華房公…山本縣著,服年發行)等所 位基。 上述配位基例如為含氮雜環配位基(較佳為碳數!〜 30 ’更佳為碳數2〜20,特佳為碳數3〜15,且 位基亦可為2相上軌絲。触為2 下,配位基。另外,2相上、6牙以下_ 混合配位基亦較佳。 /、平孑的 位其上基例如可列舉噪配位基(例如可列舉吼魏 ς葬比。定配位基、三聯^比魏位基等)、經 位基(例如可列舉經基苯基苯幷_唾 茉 基,基苯輪配位基、經基苯 〜二佳為;:=、)特較佳為· 荷佳為奴數6〜12,例如可列舉 30Wt% 'more preferably 20 wt% to 99.5 wt%' and further preferably 30 wt% to 99 wt% ° - electron transporting host compound - The above electron transporting host compound is not particularly limited and may be appropriately selected depending on the purpose. For example, it can be exemplified by a bite and a mouth. (), triazine, triazole, pyrazole, triazole, oxazole, oxadiazole, ketone, anthraquinone dimethane, anthrone (anthrone), diphenylquinone, thi〇pyran di〇xide, carbodiimide, methane, distyryl d, distryryipyrazine a fluorine-substituted aromatic compound, naphthalene perylene, or the like, a heterocyclic tetrahydrophenolic acid, a phthalocyanine, or a derivative of these compounds (which can form a condensed ring with other %). Metal complex of matter, metal phthalocyanine, various metal complexes represented by metal complexes containing benzoxazole and benzothiazole as ligands. Examples of the electron transporting host compound include a metal complex, an oxazol (benzimidazole derivative, an imidaz pyridine derivative, etc.), a azine derivative (pyridine derivative, pyrimidine derivative, triazine). Derivatives, etc.). Among them, in the present invention, a metal complex compound is preferred in terms of durability. More preferably, the above metal complex compound is a metal complex having a coordination group 29 201121359 base containing at least - money liver or oxygen atom or sulfur. The metal ion in the metal complex is not particularly limited, and is preferably cerium ion, magnesium ion, aluminum ion, gallium ion, zinc ion, indium ion, tin ion, platinum ion or palladium ion, more preferably cerium ion or aluminum. Ions, gallium ions, zinc ions, platinum ions or palladium ions, and thus preferably aluminum ions, zinc ions or palladium ions. Various known ligands are known for the ligand contained in the above metal complex, and examples thereof include "Photochemistry and ph〇t〇〇_ of Coordination Compounds" (Springer-Verlag, H=in '(4) issuance), "Organic Metal Scales and Applications" (=Huafanggong...Shanben County, served in the year). The above ligand is, for example, a nitrogen-containing heterocyclic ligand (preferably, carbon number: 〜30' is more preferably a carbon number of 2 to 20, particularly preferably a carbon number of 3 to 15, and the group may be 2 phases. Orbital wire. The contact is 2, the ligand. In addition, 2 phases, 6 teeth or less _ mixed ligand is also preferred. /, the position of the flat 其, the upper group, for example, may be mentioned as a noise coordination group (for example,吼Wei ς funeral ratio. Fixed ligand base, triplet ^ Wei group, etc.), warp group (for example, phenyl phenyl hydrazine _ simonyl, benzene ring ligand, transphenyl benzene ~ two good ;:=,) is particularly preferably · The number of slaves is 6~12, for example, 30

201121359 JO/OJpiI 苯氧基、1-萘氧基、2·萘氧基、2,4,6_三甲A =基等)、雜芳氧基配位基(較佳為碳數1〜3(^更= 嗓氧基,氧基、舉Μ氧基1 碳數u^)、燒硫基配位基(較佳為 吏佳為兔數1〜20、特佳為碳數1/Μ 可J硫基等)、芳硫基配位基(較佳為碳t :30、更佳為碳數6〜2Q、縣為碳數η),例如可 =6 =基等)、雜芳硫基配位基(較料碳數卜3 ^ 石反數1〜20、特佳為碳數卜12 , 苯幷咪㈣基、2部Μ絲、2 、2- 氧基配位基(較佳為碳數㈣ +塞:f基f )、燒 ,數6〜2〇,例如可列舉三苯基基、 ί數?等)、芳香族_子配:US 石反數6〜3。、更佳為碳數6〜25 ⑻土為 可列舉苯基陰離子、萘基 〜如 雜環陰離子配位基(較佳為碳數Γ〜;0 =:方香族 25、特佳為碳數2〜2〇 更佳為奴數2〜 離子、㈣陰離子、三錢子、^陰 ::二:::離:、笨·陰離子二%= 較佳=====陰離子配位基等, 位基。 離子配位基或芳香族雜環陰離子配 31201121359 JO/OJpiI phenoxy, 1-naphthyloxy, 2·naphthyloxy, 2,4,6-trimethyl A=yl, etc.), heteroaryloxy ligand (preferably carbon number 1-3) ^更 = methoxy, oxy, methoxy 1 carbon number u ^), sulfur-burning ligand (preferably 吏 preferably for rabbits 1 to 20, particularly preferably carbon number 1 / Μ J sulfur Alkylthio group (preferably carbon t: 30, more preferably carbon number 6 to 2Q, county carbon number η), for example, =6 = group, etc.), heteroarylthio group coordination Base (compared to carbon number 3 ^ stone inverse number 1 to 20, particularly preferred carbon number 12, benzoquinone (tetra) base, 2 filaments, 2, 2-oxyl ligand (preferably carbon number) (4) + plug: f base f), burn, number 6 to 2 〇, for example, triphenyl group, ί number, etc.), aromatic _ sub-match: US stone inverse number 6 to 3. More preferably, the carbon number is 6 to 25 (8). The soil is a phenyl anion, a naphthyl group such as a heterocyclic anion ligand (preferably a carbon number Γ~; 0 =: a square fragrant group 25, particularly preferably a carbon number) 2~2〇 is better for the number of slaves 2~ Ions, (iv) anion, triammonium, ^yin::two::: from:, stupid, anion, two% = better ===== anionic ligand, etc. Bit group. Ionic ligand or aromatic heterocyclic anion with 31

201121359 ^OZOJpiI 上述金屬錯合物電子傳輸性主體化合物例如可列舉日 本專利特,鹰號公體報、心 篇·214Π9私報、日本相如2刪·221 =開 日本專利特開祕謂4公報、日本專g門 2_-22画號公報、日本專利特開篇-助 所記載的化合物。 〜A報等 此種電子傳輸性主體化合物具體而言,例如可 下材料’但不限定於該些材料。 '201121359 ^OZOJpiI The above-mentioned metal complex electron transporting host compound can be exemplified by the Japanese patent, the eagle, the 216 Π 9 private report, the Japanese ruthenary 2 221 221 = the Japanese patent special open secret 4 Japanese Patent No. 2_-22 Picture No., Japanese Patent Laid-Open No. Specifically, such an electron transporting host compound may be, for example, a material 'but not limited to these materials. '

32 20112135932 201121359

E-15 E-16E-15 E-16

&gt;Pt&gt;Pt

33 201121359 JOZOjpil E-1733 201121359 JOZOjpil E-17

E-21 E-22E-21 E-22

關於上述電子傳輸性主體化合物的含量,相對於形成 上述發光層的所有化合物重量,較佳為10 wt%〜99.9 yvt%,更佳為20 wt%〜99.5 wt%,進而佳為30 wt%〜99 wt% 〇 上述發光層是具有以下功能的層:於施加電場時,自 陽極、電洞注入層或電洞傳輸層接受電洞,自陰極、電子 注入層或電子傳輸層接受電子,提供電洞與電子的再結合 場所而進行發光。 34 201121359 成,㈣公㈣方法來形 佈方式,轉印法,印刷法===,濕式塗 上述發光層的厚度並4適形成。 選擇,較佳為2譲,邮特!^制’可根據㈣而適當 佳為、〜·nm,進而==發光效率的觀點而言,更 丄π , 适印1土為nrn〜200 nm。另外,上 述發光層可為-層亦可為兩層以上。 为卜上 &lt;陰極側鄰接層&gt; j陰極觸接層料發光層極㈣接的有機 θ ‘、、'防止自陽極侧傳輸至發光層的電洞通過至陰極侧 的電洞阻擋層而發揮功能。 t训 上述陰極侧鄰接層的三重態能量如上所述,小於上 發光層的發光材料的三重態能量。 上述陰極側鄰接層較佳為含有縮合芳香族環化合物。 上述縮合芳香族環化合物並無特別限制,可根據 而適當選擇,較料含有具有下述通式⑻所表示的 衍生物骨架的化合物、及具有下料式⑴絲示的 生物骨架的化合物的至少一種。 35 201121359 JOZOJpilThe content of the above electron transporting host compound is preferably from 10 wt% to 99.9 yvt%, more preferably from 20 wt% to 99.5 wt%, even more preferably 30 wt%, based on the total weight of the compound forming the light-emitting layer. 99 wt% 〇 The above luminescent layer is a layer having a function of receiving a hole from an anode, a hole injection layer or a hole transport layer when an electric field is applied, and receiving electrons from a cathode, an electron injection layer or an electron transport layer to supply electricity Light is emitted by the recombination of holes and electrons. 34 201121359 成, (4) Gong (4) Method to form, transfer method, printing method ===, wet coating The thickness of the above-mentioned luminescent layer is suitable for formation. The choice is preferably 2 譲, and the TEL can be made according to (4), preferably φ, nm, and further == illuminating efficiency, more π, and 1 soil is nrn~200 nm. Further, the light-emitting layer may be a layer or two or more layers. For the above-mentioned &lt;cathode side adjacent layer&gt; j cathode contact layer, the light-emitting layer electrode (four) is connected to the organic θ ', and the hole that prevents transmission from the anode side to the light-emitting layer passes through the hole-blocking layer on the cathode side. Play the function. The triplet energy of the cathode side adjacent layer described above is smaller than the triplet energy of the luminescent material of the upper luminescent layer as described above. The cathode side adjacent layer preferably contains a condensed aromatic ring compound. The condensed aromatic ring compound is not particularly limited, and may be appropriately selected depending on the compound containing at least the derivative skeleton represented by the following formula (8) and at least the compound having the biological skeleton of the formula (1). One. 35 201121359 JOZOJpil

通式(I) 、其中,上述通式(I)中,Ar1及Ar2分別獨立為由經 取代f未經取代的核碳數6〜20的芳香族環所衍生的基。 上述,香族環可經i個或2個以上的取代基取代。上述取 代基疋選自經取代或未經取代的核碳數6〜50的芳基、經 取代或未魄代的魏卜%的絲、_代或未經取代 的碳數3〜5G的環烧基、經取代或未經取代的碳數卜5〇 的烷氧基、經取代或未經取代的核碳數6〜5〇的芳烷基、 經取代或未經取代的核原子數5〜5G的芳氧基、經取代或 未^取代的核原子數5〜5G的芳硫基、經取代絲經取代 的兔數1〜5G的錄錢基、經取代或未經取代的石夕燒 基羧基、齒素原子、氰基、硕基及經基甲。於上述芳香 族環經2個以上的取代絲代時,上述取代基可相同亦可 不同:鄰接的取代基彼此亦可相互鍵結㈣絲和或不飽 和的環狀結構。 R〜R疋遂自氫原子、經取代或未齡代的核碳數6 〜50的芳基、經取代或未經取代的核原子數5〜5〇的雜 基、經取代或未經取代的碳數卜如的烧基、經取代 經取代的碳數3〜5G的魏基、經取代或未經取代的碳$ 1〜50的烧氧基、經取代或未經取代的碳數6〜5〇的芳烷 36 201121359In the above formula (I), in the above formula (I), Ar1 and Ar2 are each independently a group derived from an aromatic ring having a core carbon number of 6 to 20 which is unsubstituted by the substitution f. In the above, the aromatic ring may be substituted with one or two or more substituents. The above substituent 疋 is selected from a substituted or unsubstituted aryl group having a core carbon number of 6 to 50, a substituted or undeuterated Weib% silk, a _ or an unsubstituted ring having a carbon number of 3 to 5 G. An alkoxy group having a carbon number, a substituted or unsubstituted carbon number, a substituted or unsubstituted aralkyl group having a core carbon number of 6 to 5 Å, a substituted or unsubstituted core atom number of 5 〜5G aryloxy, substituted or unsubstituted arylthio group having 5 to 5G of a nuclear atom, substituted by a substituted silk, 1 to 5G of a calamine group, substituted or unsubstituted Shi Xi A carboxyl group, a dentate atom, a cyano group, a base group, and a base group. When the above aromatic ring is substituted by two or more substituted filaments, the above substituents may be the same or different: adjacent substituents may be bonded to each other (tetra) and an unsaturated cyclic structure. R~R疋遂 from a hydrogen atom, a substituted or unaged aryl group having 6 to 50 aryl groups, a substituted or unsubstituted heterocyclic group having 5 to 5 fluorene groups, substituted or unsubstituted a carbon number such as a pyridyl group, a substituted substituted carbon group of 3 to 5 G, a substituted or unsubstituted carbon alkoxy group of 1 to 50, a substituted or unsubstituted carbon number of 6 ~5〇 of aralkyl 36 201121359

-JOZOjpiI 基、經取代或未經取代的核原子數5〜50的芳氧基、經取 代或未經取代的核原子數5〜50的芳硫基、經取代或未經 取代的奴數1〜50的烧氧基幾基、經取代或未經取代的碎 烷基、羧基、鹵素原子、氰基、硝基及羥基中。另外,鄰 接的取代基彼此亦可相互鍵結而形成飽和或不飽和的環狀 結構。-JOZOjpiI group, substituted or unsubstituted aryloxy group having 5 to 50 atomic number, substituted or unsubstituted arylthio group having 5 to 50 nuclear atoms, substituted or unsubstituted slave number 1 ~50 of an alkoxy group, a substituted or unsubstituted alkyl group, a carboxyl group, a halogen atom, a cyano group, a nitro group and a hydroxyl group. Further, the adjacent substituents may be bonded to each other to form a saturated or unsaturated cyclic structure.

((LVAr»、 通式(II) 其中,上述通式(II)中,Arla&amp; Ar2a分別表示經取 代或未經取代的核碳數6〜50的芳香族環基。 L分別為經取代或未經取代的伸苯基、經取代或未經 取代的伸萘基、經取代或未經取代的伸第基或經取代或未 經取代的伸二笨幷矽雜環戊二烯基。 ~ m為〇〜2的整數,nb為1〜4的整數’ s為0〜2的整 數,t為〇〜4的整數。 另外,L或Arla鍵結於芘的i位〜5位的任一個,乙 或Ar2a鍵結於芘的6位〜1〇位的任一個。 其中,於nb +1為偶數時,Arla、Ar2a、L滿足下述(1 ) 或(2 )。 37(LVAr», Formula (II) wherein, in the above formula (II), Arla &amp; Ar2a respectively represent a substituted or unsubstituted aromatic ring group having a core number of 6 to 50. L is substituted or Unsubstituted phenyl, substituted or unsubstituted anthranyl, substituted or unsubstituted thiol or substituted or unsubstituted bismuth heterocyclopentadienyl. An integer of 〇~2, nb is an integer of 1 to 4's an integer of 0 to 2, and t is an integer of 〇~4. In addition, L or Arla is bonded to any of the i bits to 5 bits of 芘, B or Ar2a is bonded to any of 6 to 1 芘 of 芘. Wherein, when nb +1 is an even number, Arla, Ar2a, and L satisfy the following (1) or (2).

201121359 ^OZDjpiI (1) Arla#Ar2a (此處#表示不同結構的基) (2) Arla = Ar2a 時 (2-1 ) m#s 及/或 nb#t,或 (2-2) m=s 且 nb = t 時, (2-2-1 ) L或芘分別鍵結於Arla及Ar2a上的不同鍵結 位置, (2-2-2)於L或芘鍵結於Arla&amp; Ar2a上的相同鍵結 位置時,L或Arla&amp; Ar2a於芘上的取代位置為1位與6位、 或2位與7位的情形不存在。 以下列舉上述具有下述通式(II)所表示的芘衍生物 骨架的化合物的具體例,但本發明不限定於該些化合物。201121359 ^OZDjpiI (1) Arla#Ar2a (where # represents a base of a different structure) (2) Arla = Ar2a (2-1) m#s and / or nb#t, or (2-2) m=s And when nb = t, (2-2-1) L or 芘 are bonded to different bonding positions on Arla and Ar2a, respectively, (2-2-2) is the same as L or 芘 bonded to Arla&amp; Ar2a At the bonding position, the substitution position of L or Arla&amp; Ar2a on 芘 is 1 bit and 6 bits, or 2 bits and 7 bits are not present. Specific examples of the compound having the anthracene derivative skeleton represented by the following formula (II) are listed below, but the present invention is not limited to these compounds.

38 20112135938 201121359

39 201121359 JQZQjpil 以下列舉上述具有通式(I)所表示的蒽街生物骨架的 化合物的具體例,但本發明不限定於該些化合物。39 201121359 JQZQjpil Specific examples of the compound having the above-described 蒽 street biological skeleton represented by the general formula (I) are listed below, but the present invention is not limited to these compounds.

接層並無特別限制’可依 法,法等的乾式製膜法ί 式塗佈方式,轉印法,印概,嘴墨方濕 上述陰極側鄰接層的厚度較佳為1 nm〜^地形成。 為2 nm〜5 nm。若上述厚度小於ι Μ 本更佳 陰極側鄰接層,高效率化或高耐久性化的效果不^形ΐ 上述厚度超過10 nm ’則於陰極側鄰接層的 二’若 時,有時會導致有機電致發光元件高電壓化。 度高 &lt;電子傳輸層&gt; 201121359 mm 上述電子傳輸層是具有自陰極或陰極側接受電子並傳 輸至1¼極侧的功能的層,如上所述,上述電子傳輸層的三 重態此量較佳為大於陰極側鄰接層的三重態能量。 上述電子傳輸層的材料並無特別限制,可根據目的而 適當選擇,例如可列舉:下述結構式所表示的2,9_二曱基 • _4,7-一苯基啡琳(浴銅靈(bathocuproine),BCP)、 於BCP中摻有Li的材料、下述結構式所表示的三(8·經基 喹啉)鋁(Alq)等的以8-羥喹啉或其衍生物作為配位基的 有機金屬錯合物、下述結構式所表示的BAlq (雙-(2-曱基 -8-羥基喹琳)-4-(苯基酚化)鋁(ΠΙ),There is no particular limitation on the layer. The dry film forming method according to law, method, etc., the coating method, the transfer method, the printing method, and the thickness of the cathode side adjacent layer are preferably 1 nm to ^. . It is 2 nm to 5 nm. If the thickness is less than ι Μ better than the cathode side adjacent layer, the effect of high efficiency or high durability is not ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ The organic electroluminescent element is increased in voltage. High degree &lt;electron transport layer&gt; 201121359 mm The above electron transport layer is a layer having a function of accepting electrons from the cathode or cathode side and transmitting to the 11⁄4 pole side, and as described above, the triplet state of the above electron transport layer is preferably It is a triplet energy larger than the adjacent layer on the cathode side. The material of the above-mentioned electron transporting layer is not particularly limited and may be appropriately selected depending on the purpose, and examples thereof include 2,9-dimercapto•_4,7-phenylphenylene represented by the following structural formula. (bathocuproine), BCP), a material in which Li is doped in BCP, and tris(8-hydroxypyridinyl)aluminum (Alq) represented by the following structural formula, such as 8-hydroxyquinoline or a derivative thereof a group-based organometallic complex, BAlq (bis-(2-mercapto-8-hydroxyquinolin)-4-(phenylphenolated) aluminum (ΠΙ) represented by the following structural formula,

Bis-(2-methyl-8-quinolinolato)-4-(phenyl-phenolate)-alumini um(IIl))等的喹琳衍生物、噁二唾衍生物、三唑衍生物、 啡琳衍生物、茈衍生物、吡啶衍生物、嘧啶衍生物、喹噁 琳衍生物、二苯醌衍生物、硝基取代葬衍生物等。該些材 料中,特佳為於BCP中摻有Li的材料、BAlq。a quinoline derivative such as Bis-(2-methyl-8-quinolinolato)-4-(phenyl-phenolate)-alumini um(IIl)), a diterpene derivative, a triazole derivative, a morphine derivative, or a quinone Derivatives, pyridine derivatives, pyrimidine derivatives, quinoxaline derivatives, diphenyl hydrazine derivatives, nitro substituted funeral derivatives, and the like. Among these materials, a material in which Li is doped into BCP and BAlq are particularly preferable.

41 20112135941 201121359

AlqAlq

上述電子傳輸層例如可藉由蒸鍍法、濕式製膜法、電 子束法、滅鑛法、反應性錢鍍法、分子束蠢晶(M〇iecuiar Beam Epitaxy,MBE)法、簇離子束(cluster i〇n beam) 法、離子電鍍法(ion plating method)、電漿聚合法(高頻 激發離子電鍍法)、分子積層法、蘭慕爾-布羅吉 (Langmuir-Blodgett,LB)法、印刷法、轉印法等上述方 法而合適地形成。 f述電子傳騎可為單雜造,亦可為 本發明的有機電致發光元件是於陽極與陰極之門且有 至少包含至少_層發光,、祕兮欲丄/丨^之間具有 9及於該發光層的陰極侧鄰接的 42 201121359 陰極側鄰接層的有機層, 陰極側鄰接的電子傳輸層,細鄰接層的 例二=2別:制’可根據目的而適當選擇, 阻擋層等。 s眺人層、制傳輸層、電子 -電子注入層- 輸至具有自陰極或陰極側接受電子並傳 單層ϋ電為由&quot;&quot;種或兩種以上的材料形成的 的^層構造同組成或不同種組成的多層所構成 適心電層的厚度並無特別限制,可根據目的而 二nm〜200 nm,更佳為0.2⑽〜⑽ nm進而佳為0.5 nm〜50 nm。 _電洞注入層、電洞傳輸層- /上述電洞注入層及電洞傳輸層是具有自陽極 ==並傳ί至陰極側的功能的層。該電洞注又層及電 專輸θ可為單層構造,亦可為由 的歸所構成㈣層構造。 ^不Π種組成 八子所用的電洞注入材料或電洞傳輸材料可為低 刀子化合物亦可為高分子化合物。 - ㈣ΐί電洞注入材料或電洞傳輸材料並無特別限制,可 根據㈣而私選擇’例如可列舉轉衍生物、味 物、三麵生物H衍生物H衍生物、咪唾衍生 43 201121359 ^方基駿魅物、Btb㈣衍生物、㈣侧衍生物、 芳基胺衍生物、胺基取代轴衍生物、苯 =烯射物、_衍生物、腙衍生物、二苯乙烯衍生 二=:生物、芳香族三級胺化合物、苯乙婦基胺化 二铷方香人甲基糸化合物、酞菁系化合物、卟啉系 r衍生物、有機魏衍生物、碳等。該些材料 了早獨使用一種,亦可併用兩種以上。 雜劑t述電洞注入層及電洞傳輸層中’可含有受電子性摻 人此ί述受電子性捧雜劑只要為受電子性而具有將有機化 a物,化的性質’則無機化合物、有機化合物均可使用。 ^無機化合物並無特別限制,可根據 例如可列舉··氯化鐵、氯化銘、氯化鎵、氣』ί =録等的一五氧她一二: 1述有機化合物並無制關,可 例如可列舉:具有献、时、氰基 ,化合物;I系化合物、酸酐系化 兩^ΓΓ)#。軸化合物可單難用—種,亦可併用 材料==摻雜劑的使用量並無特別限制,是根據 Γ=Γη相對於電洞傳輸層材料或電洞注入材 哪,進而二Wt%〜5° Wt% ’更佳為G.G5 Wt%〜30 進而佳為〇·1 wt%〜30 wt%。 44 201121359 八4 傳輪層並無特別限制,可依昭 二知的方絲料’例如可#由魏^、猶料 ^ 製膜法’濕式塗佈法,轉印法,印 1 適地形成。 々式4而合 上述電洞注入層及電洞傳輸層的厚度較腿〜 :更佳為^〜謂咖進而佳為^ -電子阻擋層- m 上述電子阻獅是具有防止自陰極爾輸至發光 ==:=的層,是作為與‘陽 ㈣==的作為上述電 上述材料的一種赤Λ錄、L ,卜上述電子阻擋層可為由 同組:或不同種組成二造亦可為由相 上述電子阻擋層並無特別限制,可依昭 3 ’例如可藉由蒸鏡法、賤鍍 茲=方3 法,印刷法,喷墨方式等==成 lmn % 擒層的厚度較佳為lnm〜20()nm,更佳為 I nm〜50 nm,i隹;swi劣, 又住馬 進而佳為3 nm〜i〇nm。 &lt;電極&gt; 陰極發光元件具有-對電極、即陽極與 於上述有機電致發光元件的性皙方而而士 陽極及陰極申的至少一 δ,較佳為 有作為對有機層供二電。通常,陽極只要具 。電/⑽電極的魏即可,陰極只要具 45 201121359 有作為對有機層注入電子的電極的功能即可。 關於上述電極,其形狀、構造、大小等並 可根據有機電致發光元件_途、目的 料中適當選擇。 a*的電極材 構成上述電極的材料例如可合適地列舉金屬、人 金屬氧化物、導·化合物或·_的齡物等:、 -陽極- 構成上述陽極的材料例如可列舉:摻有録、氣等的 化錫( ΑΤΟ、FTO),氧化錫,氧化辞,氧化姻,氧化鋼錫 (ΙΤΟ),氧化鋅銦(ΙΖΟ)等的導電性金屬氧化物;金、 銀、絡、錄等的金屬;該些金屬與導電性金屬氧化物的混 =或積層物;魏銅、硫化銅等的無機導電性物質;聚 苯胺、聚噻吩、聚吡咯等的有機導電性材料,或該些材料 與ITf的積層物等。該些材料中,較佳為導電性金屬氧化 物,就生產性、高導電性、透明性等的方面而言特佳為 ITO。 _陰極- 構成上述陰極的材料例如可列舉··鹼金屬(例如Li、 Na、K、C4)、鹼土金屬(例如Mg、Ca等)、金、銀、 鉛、鋁、鈉-鉀合金、鋰·鋁合金、鎂_銀合金、銦、镱等的 稀土金屬等。該些材料可單獨使用,就兼具穩定性與電子 注入性的觀點而言,可合適地併用兩種以上。 該些材料中,就電子注入性的方面而言,較佳為鹼金 屬、鹼土金屬,就保存穩定性優異的方面而言,特佳為以 46 201121359 36263pif 紹作為主體的材料。 主體_,是指_、銘與_ 混合物(例如鍾-銘合金、㈣合金等)。 金屬的 法來形成方法並無特別限制’可依照公知的方 學氣離子⑽法等的物理方式,·化 ίΐΓι Vapor Deposltlon ? CVD^ cvd =等的化子方式等。該些方法中’可依 ,極的材料的適性而適#選擇的方法而形ϋ上述美 。例如於選擇ΙΤ0作為陽極的材料時,可依昭直^古 蒸鍍法、離子麵法等來形成。於 屬·#作為陰極的材料時,可將其 、擇金 序依法等來形成。 種或兩種以上同時或依 再者,卿成上料辦妨_ ,用光微影(____ 了藉 或藉由_雷射等的物理賴 仃, C ask)並實施真空洛鍍或崎等來進行 離法(lift-off method )或印刷法來進行。 曰由剝 &lt;基板&gt; 本發明的有機電致發光元件健為 以電極與基板直接接觸的形態設置,亦食上’能 形態設置。 U “叫者中間層的 上述基板的材料並無特別限制,可根據目的而適當選 47 201121359 36263pit 擇’例如可列舉氧化釔穩定氧化鍅(YSZ)、玻璃(無鹼玻 璃、鹼石灰玻璃(soda lime glass)等)等的無機材料;聚 對本一甲酸乙一酉旨、聚鄰苯二甲酸丁二酯(polybutylene P^thalate)、聚萘二甲酸乙二酯等的聚酯;聚苯乙烯、聚碳 酸酯、聚醚砜(p〇lyether suif0ne)、聚芳烴(p〇lyarylate)、 聚酿亞胺、聚環烯烴、降冰片烯樹脂(n〇rb〇rneneresin)、 聚(氣三氟乙烯)等的有機材料等。 上述絲的雜、構造、A小等並無制限制,可根 ,有機電致發光it件的用途、目的等而適當選擇。通常而 板的形狀較佳為板狀。基板的構造可為單層構造, 亦可為積層構造,另外,可由單一 ^於上述基板,可於其表面或背面設置防透濕層(阻 氣層) 上述防透濕層(阻氣層)的好姓么丨H 氧切等的無機物等/⑽枓例如可列舉氮化石夕、 上述防透濕層(阻氣層)例 形成。 j精由呵頻歲鍍法等來 -保護層- 有機電致發光元件整體亦可藉由 上述保護層所含的材料只要:護0加以保護。 進元件劣化的物質進人至元]水分或氧等的促 制,可根據目的而適當選擇,例^此,則並無特別限 擇例如可列舉:In、Sn、Pb、 48 201121359The electron transport layer may be, for example, an evaporation method, a wet film formation method, an electron beam method, a mineralization method, a reactive money plating method, a molecular beam epitaxy (MBE) method, or a cluster ion beam. (cluster i〇n beam) method, ion plating method, plasma polymerization method (high frequency excited ion plating method), molecular lamination method, Langmuir-Blodgett (LB) method A method such as a printing method or a transfer method is suitably formed. f The electronic transmission can be a single hybrid, or the organic electroluminescent device of the present invention is at the gate of the anode and the cathode and has at least at least _ layer of light, and between the secrets and the 丨^ 42 201121359 adjacent to the cathode side of the light-emitting layer, organic layer of the cathode side adjacent layer, electron transport layer adjacent to the cathode side, and example 2 of the thin adjacent layer: the system can be appropriately selected according to the purpose, the barrier layer, etc. .眺 层 layer, system of transport layer, electron-electron injection layer - the structure of the layer with the self-cathode or cathode side accepting electrons and the leaflet layer is formed by the &quot;&quot; species or two or more materials The thickness of the electroconductive layer formed of the multilayer of the composition or the different composition is not particularly limited, and may be from 2 nm to 200 nm, more preferably from 0.2 (10) to (10) nm, and even more preferably from 0.5 nm to 50 nm, depending on the purpose. The hole injection layer, the hole transport layer - / the above hole injection layer and the hole transport layer are layers having a function from the anode == to the cathode side. The hole injection layer and the electric power transmission θ may be a single layer structure or a (four) layer structure composed of the return. ^不Π种组成 The hole injection material or hole transport material used for the eight sons may be a low knife compound or a polymer compound. - (4) ΐί hole injection material or hole transmission material is not particularly limited, and can be selected privately according to (4) 'For example, transductive derivatives, flavors, three-sided biological H derivatives H derivatives, and rice derivatives 43 201121359 ^方基骏Charm, Btb (tetra) derivatives, (four) side derivatives, arylamine derivatives, amine-substituted axis derivatives, benzene = olefins, _ derivatives, hydrazine derivatives, stilbene-derived two =: biological, aromatic A tertiary amine compound, a phenethyl amidated diterpene sulphate methyl quinone compound, a phthalocyanine compound, a porphyrin-based r derivative, an organic Wei derivative, carbon, or the like. These materials may be used alone or in combination of two or more. In the hole injection layer and the hole transport layer, the dopant may contain an electron-accepting one, and the electron-containing dopant may have an organic substance as long as it is electron-accepting. Compounds and organic compounds can be used. The inorganic compound is not particularly limited, and may be, for example, a ferric chloride, a chlorinated chloride, a gallium chloride, a gas, or a gas, and the like. For example, there may be mentioned a compound having a time, a cyano group, a compound; an I-based compound, and an acid anhydride-based compound. The shaft compound can be used alone or in combination with the material == The amount of the dopant used is not particularly limited, and is based on Γ=Γη with respect to the hole transport layer material or the hole injection material, and further two Wt%~ 5° Wt% 'better is G.G5 Wt%~30 and then preferably 〇·1 wt%~30 wt%. 44 201121359 八4 The transmission layer is not particularly limited, and it can be formed by the wet coating method, the transfer method, and the printing method of the square wire material 'for example, 'Wei ^, Ju ^ ^ film making method'. The thickness of the above-mentioned hole injection layer and the hole transmission layer is better than that of the leg type: ~ is better than that of the above-mentioned hole and the other is - the electronic barrier layer - m The above-mentioned electronic barrier lion is prevented from the cathode to the The layer of luminescence ==:= is used as the above-mentioned material of the above-mentioned materials, and the above-mentioned electron blocking layer may be composed of the same group: or different species. The electron blocking layer is not particularly limited, and may be, for example, a vapor deposition method, a ruthenium plating method, a printing method, an inkjet method, etc., and the thickness of the layer is preferably lmn%. It is 1 nm~20() nm, more preferably I nm~50 nm, i隹; swi is inferior, and the horse is further preferably 3 nm~i〇nm. &lt;Electrode&gt; The cathode light-emitting element has at least one δ of the counter electrode, that is, the anode and the organic electroluminescence element, and preferably has an anode and a cathode. . Usually, the anode has only one. The electric/(10) electrode can be used as it is, and the cathode can be used as an electrode for injecting electrons into the organic layer as long as it has 45 201121359. Regarding the above electrode, its shape, structure, size, and the like can be appropriately selected depending on the organic electroluminescence device. The material of the electrode of the a* is, for example, a metal, a human metal oxide, a compound or a compound, or the like, and an anode. The material constituting the anode is exemplified by a recording, Conductive tin oxides such as sulphur, such as sulphur, sulphur, oxidized, oxidized steel, bismuth oxide, etc.; gold, silver, ruthenium, etc. a metal; a mixed or laminated product of the metal and the conductive metal oxide; an inorganic conductive material such as copper or copper sulfide; an organic conductive material such as polyaniline, polythiophene or polypyrrole, or the like ITf's laminates, etc. Among these materials, a conductive metal oxide is preferable, and ITO is particularly preferable in terms of productivity, high conductivity, transparency, and the like. _Cathode - Examples of the material constituting the cathode include alkali metal (for example, Li, Na, K, and C4), alkaline earth metal (for example, Mg, Ca, etc.), gold, silver, lead, aluminum, sodium-potassium alloy, and lithium. Aluminum alloy, magnesium-silver alloy, rare earth metal such as indium or antimony. These materials may be used singly, and two or more types may be used in combination as long as they have both stability and electron injectability. Among these materials, in terms of electron injectability, alkali metal or alkaline earth metal is preferred, and in terms of excellent storage stability, it is particularly preferred to use 46 201121359 36263pif as a main material. The main body _ refers to the mixture of _, Ming and _ (for example, Zhong-Ming alloy, (4) alloy, etc.). The method of forming the metal is not particularly limited, and may be carried out according to a physical method such as a well-known method such as a gas ion (10) method, or a chemical method such as VV Vapor Deposltlon® CVD^cvd=. In these methods, the above-mentioned beauty can be formed by the method of selecting the material of the polar material. For example, when ΙΤ0 is selected as the material of the anode, it can be formed by a vapor deposition method, an ion surface method, or the like. When the genus # is used as the material of the cathode, it can be formed by legally selecting the gold and the like. Kind or two or more at the same time, or according to the other, Qingcheng can do _ _, use light lithography (____ borrowed or by _ laser, etc., C ask) and implement vacuum Luo plating or Qi It is carried out by a lift-off method or a printing method.曰 曰 & 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机U "The material of the above-mentioned substrate of the middle layer of the caller is not particularly limited, and may be appropriately selected according to the purpose. 47 201121359 36263pit", for example, yttrium oxide stabilized yttrium oxide (YSZ), glass (alkali-free glass, soda lime glass (soda) Inorganic materials such as lime glass, etc.; polyesters such as polyethylene terephthalate, polybutylene P^thalate, polyethylene naphthalate, etc.; polystyrene, poly Carbonate, polyethersulfone (p〇lyether suif0ne), polyarene (p〇lyarylate), polyaniline, polycycloolefin, norbornene resin (n〇rb〇rneneresin), poly(gas trifluoroethylene), etc. The organic material, etc. The wire is not limited in terms of impurities, structure, or small size, and can be appropriately selected from the use and purpose of the organic electroluminescence element. Usually, the shape of the plate is preferably a plate shape. The structure may be a single-layer structure or a laminated structure, and a single layer of the substrate may be provided, and a moisture-proof layer (gas barrier layer) may be disposed on the surface or the back surface of the moisture-proof layer (gas barrier layer). The surname, 丨H, oxygen, etc. (10) 枓 枓 氮化 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 氮化 j j j j j j j j j j The material to be contained is not particularly limited as long as it is protected by a protection of 0. The substance which deteriorates the element is introduced into the element. The promotion of moisture or oxygen can be appropriately selected according to the purpose. In, Sn, Pb, 48 201121359

An、Cu、Ag、A卜 Ti、Ni 等的金屬;Mg〇、Si〇、si〇2、 A1203、GeO、NiO、CaO、BaO、Fe2〇3、y2〇3、Ti〇2 等的 金屬氧化物;SiNx、SiNxOy等的金屬氮化物;MgF2、LiF、 AIF3、CaF2等的金屬氟化物;聚乙烯、聚丙烯、聚曱基丙 烯酸甲酯、聚醯亞胺、聚脲、聚四氟乙烯、聚氯三氟乙烯、 聚二氯二氟乙烯、氯三氟乙烯與二氯二氟乙烯的共聚物、 使含有四氟乙烯與至少一種共單體的單體混合物共聚合所 得的共聚物、於共聚合主鏈上具有環狀結構的含氟共聚 物、吸水率為1%以上的吸水性物質、吸水率為〇1%以下 的防濕性物質等。 上述保護層的形成方法並無特別限制,可根據目的而 適當選擇’例如可列舉真空蒸錢法、濺鍍法、反應性濺鍵 法、ΜΒΕ (分子束磊晶)法、簇離子束法、離子電鑛法、 電漿聚合法(高頻激發離子電鍍法)、電.CVD法、雷射 CVD法、熱CVD法、氣體源CVD法、塗佈法、印刷法、 轉印法等。 -密封容器- • 本發明的有機電致發光元件亦可使用密封容器將元件 - *體密封。進而’亦可於上述密封容器與有機電致發光元 • 件之間的空間内封入水分吸收劑或非活性液體。 i述水分吸㈣並無特別限制,可根據目的而適當選 擇,例如可列舉氧化鋇、氧化鈉、氧化钟、氧蝴、硫酸 鈉、硫酸詞、硫酸鎖、五氧化二嶙(ph〇sph咖%咖、 氯化妈、氣化鎂、氣化銅、氟化绝、氟化鈮、演化約、漠 49 201121359 36263pif $飢、分子筛(molecularsieve)、彿石(zeolite)、氧化鎂 上述非活性液體並無特別限制,可根據目的而適 擇’例如可列舉石躐(paraffin)類、液體石_ ;全說烧 ^ ; I, 系/谷劑、石夕氧油(silicone oil)類等。 _樹脂密封層- :::的:機電致發光元件較佳為藉由利用樹脂密封 密封耐卩㈣來自大氣的氧姐分導致的元件性能 ^述樹脂密封層的樹脂素材並無特別限制,可根 選擇,例如可列舉丙烯酸系樹脂、環氧樹 ^月曰、聚魏系樹脂、橡膠系樹脂 = =产中氧分的功能的方*而言特佳為=樹月, 氧^ 佳為熱硬化型環氧樹脂或光硬化型環 ^述樹脂密封層的製作方法並無特別限制,可根 選擇’例如可列舉塗佈樹脂溶 纖的方法、藉由蒸咖等進行乾 -密封黏接劑- 入的功 能 上述密封黏接劑具有防止水分或氧自端部渗 所用 上述密封黏接_材料可使用與上述樹脂密封層 50 201121359 的材料柏_材料。該 而言,較佳為環氧系黏&amp;=枓中,就防止水分滲入的方面 硬化型點接劑。丨特佳為光硬化型黏接劑或熱 例如較佳為二在S接,中添加填料(filler)。上述填料 (氮切)等的I機材|化朴Si0N (氮氧化朴_ 的黏度提昇,加:適性提昇料’密封黏接劑 列舉=^封轉_可含有乾賴。上述錢劑例如可 量=,、氧化銘等。關於上述乾燥劑的添加 更佳為_ wt=f t劑,佳為〇.01 Wt%〜2〇 wt%, 有時乙果變弱’若上述添加量超過20 wt%,則 於钱黏接射均勻分散乾燥劑。 、十、於^日种’可藉由分注11 (dispensel&quot;)等將放入有上 ,乾無劑的密封黏接劑以任意量而塗佈,塗佈後重疊第2 基板並進行硬化,藉此加以密封。 圖2是表示本發明的有機電致發光元件的層構成的一 例的概,®。有機電歸光元件n具有將職於玻璃基板 1上的陽極2 (例如ITO電極)、電洞注入層3、孔傳輸層 斗、電子阻擋層5、發光層0、陰極侧鄰接層(電洞阻擋層) 7、電子傳輸層8、電子注入層9、陰極1〇 (例如A1_Li電 極)依序積層而成的層構成。再者,陽極2 (例如IT〇電 極)與陰極1〇(例如A1_Li電極)是經由電源而彼此連接。 51 201121359 36263pit -驅動_ 本發明的有機電致發光元件可藉由在陽極與陰極之間 施加直流(視需要亦可含有交流成分)電壓(通常為2 v (伏特)〜15 V)、或直流電流而獲得發光。 本發明的有機電致發光元件可藉由薄膜電晶體(Thin Film Transistor,TFT )而應用於主動式矩陣( matrix )。可應用非晶碎、局溫多晶碎、低溫多晶碎、微晶 矽、氧化物半導體、有機半導體、碳奈米管等作為薄膜電 晶體的活性層。 ' 本發明的有機電致發光元件例如可應用 W02005/088726號手冊、日本專利特開2〇〇6_165529號公 報、美國專利申請案公開2008/0237598A1說明書等所二 的薄膜電晶體。 曰 ° 本發明的有機電致發光元件並無特別限制,可藉由各 種公知的方法來提高光取出效率。例如可藉由 形狀進行加工(例如形成微細凹凸随),控制/板、^ 層、有機?的折射率,控制基板、IT〇層、有機層的厚度 等,而提高光的取出效率,使外部量子效率提高。 又 ,自本發_有機電致發光元件的絲財式可為頂部 發光(top emission)方式,亦可為底部發光 emission)方式。 本發明的有機電致發光元件亦可具有共振器構造。 如可於透縣板上重合具有由折射率Μ㈣個積層膜 形成的多層膜反射鏡、咖解透明電極、發光層及金斤 52 201121359 的光將多層膜反射鏡與金屬電極作為 反射板而於其間反覆反射而共振。 下马 其他較佳態樣中,於透明基板 ,極分別作為反射板而發揮功能 光於其間反覆反射而共振。 中產生的 率、造,而將由兩塊反射板的有效折射 共振波長的值。第1態樣的情形的計算 ίΐϊί 制平9_刪83號公射。第2態樣 =形的枯式是記餘日本專觸開聰]2而號公 ••用途_ 本發明的有機電致發光元件並無特別限制,可根據目 ^而適當選擇,可合適_於顯示元件、顯示器㈤㈣)、 f先(backlight)、電子照片、照明光源、記錄光源、曝光 “源、磧取光源、標識、廣告牌、内部飾件(interi〇r)、光 通訊等。 關於使上述有機電致發光顯示器成為全彩型的方法, 如「、月刊顯示器」(2000年9月號)第33頁〜第37頁所 記載般,已知有將分別發出與顏色的三原色(藍色(B)、 、、杂色(G)、紅色(R))對應的光的有機電致發光元件配置 於基板上的三色發光法、使白色發光用的有機電致發光元 件的白色發光通過彩色滤光片(c〇l〇rmter)而分成三原色 的白色法、使藍色發光用的有機電致發光元件的藍色發光 53 201121359 36263pif 通過螢光色素層而轉換成紅色(R)及綠色(G)的顏色轉 換法等。另外,亦可藉由將利用上述方法獲得的不同發光 色的有機電致發光元件組合使用多個,來獲得所需的發光 色的平面型光源。例如可列舉:將藍色及黃色的發光元件 組合而成的白色發光光源,將藍色、綠色、紅色的發光元 件組合而成的白色發光光源等。 [實例] 以下,對本發明的實例進行說明,但本發明不受該些 實例的任何限定。 (實例1) -有機電致發光元件的製作- 於0.5 mm厚、2.5 cm見方的玻璃基板上,以1〇〇 nm 的厚度進行濺鍍而設置作為陽極的氧化銦錫(Indium Tin Oxide,ITO)。接著,將該附有IT〇的玻璃基板放入至清 洗容器中,於2-丙醇中進行超音波清洗後,進行3()分鐘 的紫外線(Ultraviolet,UV)-臭氧處理。於該附有ΙΤ〇的 玻璃基板上藉由真空蒸鑛法而蒸鏟以下的各層。 再者,以下的實例及比較例中的蒸鍍速度只要無特別 說明’則為0.1 nm/s。蒸錢速度是使用晶體振盪器(crystal 〇SClllat〇0來測定。另彳,以下的各層的厚度纽用晶體 振蓋器來測定。 ^首先,於陽極(IT〇)上,以厚度成為12〇nm的方式 藉由真空駿法而形成於τ述轉柄絲的4,4,,4,,_三 (Ν,Ν-(2-萘基)_苯基胺基)三苯基胺(2_τνατα)摻有〇3 54 201121359 wt%的下述結構式所表示的F4-TCNQ的電洞注入層。Metals of An, Cu, Ag, A, Ti, Ni, etc.; metal oxidation of Mg〇, Si〇, si〇2, A1203, GeO, NiO, CaO, BaO, Fe2〇3, y2〇3, Ti〇2, etc. Metal nitrides of SiNx, SiNxOy, etc.; metal fluorides of MgF2, LiF, AIF3, CaF2, etc.; polyethylene, polypropylene, polymethyl methacrylate, polyimine, polyurea, polytetrafluoroethylene, a copolymer of polychlorotrifluoroethylene, polydichlorodifluoroethylene, chlorotrifluoroethylene and dichlorodifluoroethylene, a copolymer obtained by copolymerizing a monomer mixture containing tetrafluoroethylene and at least one comonomer, A fluorinated copolymer having a cyclic structure in the main chain, a water-absorbent substance having a water absorption of 1% or more, a moisture-proof substance having a water absorption ratio of 〇1% or less, or the like. The method for forming the protective layer is not particularly limited, and may be appropriately selected according to the purpose. For example, a vacuum evaporation method, a sputtering method, a reactive sputtering method, a ΜΒΕ (molecular beam epitaxy) method, a cluster ion beam method, or the like may be mentioned. Ion electrowinning method, plasma polymerization method (high-frequency excitation ion plating method), electric CVD method, laser CVD method, thermal CVD method, gas source CVD method, coating method, printing method, transfer method, and the like. - Sealed container - The organic electroluminescent element of the present invention can also be sealed with a sealed container using a sealed container. Further, a moisture absorbent or an inactive liquid may be enclosed in a space between the sealed container and the organic electroluminescence element. The water absorption (four) is not particularly limited and may be appropriately selected depending on the purpose, and examples thereof include cerium oxide, sodium oxide, oxidized clock, oxygen butterfly, sodium sulfate, sulfuric acid word, sulfuric acid lock, and antimony pentoxide (ph〇sph coffee). % coffee, chlorinated mother, magnesium gasification, vaporized copper, fluorinated, cesium fluoride, evolution, desert 49 201121359 36263pif $ hunger, molecular sieve (molecularsieve), zeolite (zeolite), magnesium oxide, the above inactive liquid There is no particular limitation, and it can be appropriately selected according to the purpose, for example, a paraffin type, a liquid stone _; all said to burn; I, a system, a gluten, a silicone oil, etc. _ Resin Sealing Layer - ::: The electroluminescent element is preferably sealed by sealing with a resin. (4) Elemental properties caused by oxygen scavenging from the atmosphere. The resin material of the resin sealing layer is not particularly limited. The selection may be, for example, an acrylic resin, an epoxy resin, a poly-wei resin, or a rubber-based resin = = a function of producing oxygen in the production * particularly preferably = tree month, and oxygen is preferably a heat hardening Type epoxy resin or photohardenable ring The production method is not particularly limited, and the method can be selected, for example, a method of coating a resin cell, a dry-sealing adhesive-incorporating function by steaming a coffee or the like, and the above-mentioned sealing adhesive has a moisture or oxygen-free self-end. For the above-mentioned sealing and bonding _ material used for the partial osmosis, the material cymbal material of the above-mentioned resin sealing layer 50 201121359 can be used. In this case, it is preferably an epoxy-based viscous &amp;= 枓, a hardening type point for preventing moisture penetration. The adhesive is preferably a photocurable adhesive or a heat, for example, a filler is added in the S, and a filler is added in the S. The filler (nitrogen cut) and the like are made of I. The viscosity is increased, plus: the adaptability of the material 'sealing adhesives enumeration = ^ sealing turn _ can contain dry. The above-mentioned money agent such as the amount =, oxidation name, etc.. The addition of the above desiccant is better _ wt = Ft agent, preferably 〇.01 Wt%~2〇wt%, sometimes the fruit is weaker. 'If the above addition amount exceeds 20 wt%, then the dry agent is evenly dispersed in the money bonding. 'Can be placed on the top, dry adhesive-free sealing adhesive by dispensing 11 (dispensel &quot;) The coating is applied in an amount, and after coating, the second substrate is superposed and cured to seal the film. Fig. 2 is a view showing an example of the layer configuration of the organic electroluminescence device of the present invention. An anode 2 (for example, an ITO electrode), a hole injection layer 3, a hole transport layer hopper, an electron blocking layer 5, a light-emitting layer 0, a cathode-side adjacent layer (hole blocking layer) 7, and an electron working on the glass substrate 1. The transmission layer 8, the electron injection layer 9, and the cathode 1 (for example, the A1_Li electrode) are formed by sequentially laminating layers. Further, the anode 2 (for example, an IT electrode) and the cathode 1 (for example, an A1_Li electrode) are via a power source. Connect to each other. 51 201121359 36263pit - Drive _ The organic electroluminescent device of the present invention can be applied with a direct current (and optionally an alternating component) voltage (usually 2 v (volts) to 15 V) or a direct current between the anode and the cathode. Light is obtained by current. The organic electroluminescent device of the present invention can be applied to an active matrix by a Thin Film Transistor (TFT). Amorphous, super-temperature polycrystalline, low-temperature polycrystalline, microcrystalline germanium, an oxide semiconductor, an organic semiconductor, a carbon nanotube, or the like can be applied as an active layer of a thin film transistor. The organic electroluminescence device of the present invention can be applied, for example, to a film transistor of the specification of WO2005/088726, the specification of Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei.曰 ° The organic electroluminescence device of the present invention is not particularly limited, and the light extraction efficiency can be improved by various known methods. For example, it can be processed by shape (for example, forming fine irregularities), control/board, layer, organic? The refractive index, which controls the thickness of the substrate, the IT layer, and the organic layer, improves the light extraction efficiency and improves the external quantum efficiency. Further, the silk type of the organic electroluminescence element from the present invention may be a top emission method or a bottom emission method. The organic electroluminescent device of the present invention may have a resonator structure. For example, a multilayer film mirror having a refractive index 四 (four) laminated film, a light-emitting transparent electrode, a light-emitting layer, and a light of a gold foil 52 201121359 may be superposed on a plate to be a reflector. In the meantime, it reflexes and resonates. In other preferred embodiments, in the transparent substrate, the poles function as reflectors, respectively, and the light reverberates between them to resonate. The rate produced in the generation, which will be effectively reflected by the two reflectors, is the value of the resonant wavelength. Calculation of the situation of the first aspect ίΐϊί 制平 9_ Delete 83 射射. In the second aspect, the dry form of the shape is the Japanese one. The organic electroluminescent element of the present invention is not particularly limited, and may be appropriately selected according to the purpose, and may be suitably used. For display components, displays (5) (4)), f (backlight), electronic photos, illumination sources, recording sources, exposure "sources, light sources, signs, billboards, interior trims (interi〇r), optical communications, etc.) A method of making the above-described organic electroluminescence display into a full-color type, as described in "Monthly Display" (September 2000), pages 33 to 37, is known as three primary colors (blue) A three-color luminescence method in which an organic electroluminescence device having light corresponding to color (B), chromatic (G), and red (R) is disposed on a substrate, and white luminescence of an organic electroluminescence device for white luminescence A white method of dividing into three primary colors by a color filter (c〇l〇rmter), and a blue light emission of an organic electroluminescence element for blue light emission 53 201121359 36263pif is converted into red (R) by a fluorescent pigment layer and Green (G) color conversion method . Further, a planar light source of a desired luminescent color can also be obtained by using a plurality of organic electroluminescent elements of different luminescent colors obtained by the above method in combination. For example, a white light-emitting source in which blue and yellow light-emitting elements are combined, and a white light-emitting source in which blue, green, and red light-emitting elements are combined may be mentioned. [Examples] Hereinafter, examples of the invention will be described, but the invention is not limited by the examples. (Example 1) - Preparation of an organic electroluminescence device - Indium Tin Oxide (ITO) was provided as an anode on a 0.5 mm thick, 2.5 cm square glass substrate by sputtering at a thickness of 1 〇〇 nm. ). Next, the IT crucible-attached glass substrate was placed in a cleaning vessel, ultrasonically cleaned in 2-propanol, and subjected to ultraviolet (Ultraviolet, UV)-ozone treatment for 3 () minutes. The following layers were steamed on the glass substrate with ruthenium by vacuum distillation. In addition, the vapor deposition rate in the following examples and comparative examples was 0.1 nm/s unless otherwise specified. The steaming speed is measured using a crystal oscillator (crystal 〇SClllat〇0. In addition, the thickness of each layer below is measured by a crystal vibrator. ^ First, on the anode (IT〇), the thickness becomes 12〇. The way of nm is formed by the vacuum method in the 4,4,4,3,3(Ν,Ν-(2-naphthyl)phenylamino)triphenylamine (2_τνατα) A hole injection layer of F4-TCNQ represented by the following structural formula is doped with 〇3 54 201121359 wt%.

NC、,CNNC,,CN

NC 八 CN F4-TCN0 繼而,於電洞注入層上,以厚度成為7 nm的方式藉 由真空蒸鍍法而形成作為電洞傳輸層的下述結構式所表示 的 NPD (N,N’_二萘基-N,N’-二苯基-[1,Γ-聯苯基]-4,4’-二 胺)。 55 201121359NC VIII CN F4-TCN0 Then, on the hole injection layer, NPD (N, N'_ represented by the following structural formula as a hole transport layer is formed by vacuum evaporation at a thickness of 7 nm. Dinaphthyl-N,N'-diphenyl-[1, fluorenyl-biphenyl]-4,4'-diamine). 55 201121359

JOZOJpiIJOZOJpiI

N P D 由真*L於電洞傳輪層上,以厚度成為3 .式所表示 上:鍵法而形成作為電子阻推層以:構的方式藉N P D is formed by the true *L on the hole-passing layer of the hole, and is expressed by the thickness of the formula 3. The upper: the key method is formed as an electronic resistive layer.

心j著’以厚度成為I01的方式藉由真空蒸鑛法而形 成作為主歸料的下述結構式所絲的化合物A、及推有 相對於該化合物A為15 wt。/。的作為磷光發光材料的下述 結構式所表示的化合物B的發光層。 56 201121359 36263pifThe core A was formed into a compound A of the following structural formula as a main charge by a vacuum distillation method so as to have a thickness of I01, and was 15 wt% with respect to the compound A. /. The light-emitting layer of Compound B represented by the following structural formula as a phosphorescent material. 56 201121359 36263pif

化合物B 然後,於發光層上,以厚度成為3 nm的方式藉由真 空蒸鍍法而形成作為陰極側鄰接層的下述結構式所表示的 化合物C (tbppy (1,3,6,8-四(4-聯苯基)芘))。 57 201121359Compound B Then, a compound C (tbppy (1, 3, 6, 8-) represented by the following structural formula as a cathode-side adjacent layer was formed by vacuum evaporation on the light-emitting layer by a thickness of 3 nm. Tetrakis(4-biphenyl)芘)). 57 201121359

繼而,於陰極側鄰接層上,以厚度成為3〇 nm的方式 藉由真空蒸鍍法而形成作為電子傳輸層的下述結構式所表 不的雙-(2-曱基-8-羥喹啉)-4_(苯基酚化)鋁(111) (Bis-(2-methyl-8-quinolinolato)-4-(phenyl-phenolate)-alum inium(III),BAlq )。Then, on the cathode-side adjacent layer, bis-(2-mercapto-8-hydroxyquine) represented by the following structural formula as an electron transport layer was formed by a vacuum deposition method so as to have a thickness of 3 〇 nm. Boryl--4-(phenylphenolated)aluminum (111) (Bis-(2-methyl-8-quinolinolato)-4-(phenyl-phenolate)-alum inium (III), BAlq).

Λ古接,於電子傳輸層上’以厚度成為1邮的方式藉 真空蒸鍍法而形成作為電子注入層的氟化鋰(LiF)。 」後於電子’主人層上設置經圖案化的遮罩(發光區 ^ 1 Γχ2 mm的遮罩)’以厚度成為100 的方式藉 真工蒸鍍法而形成作為陰極的金屬紹。 58 201121359 36263pif 將藉由以上操作而製作的積層體放入至經氬氣置換的 手套鈿(glove box)内,使用不鏽鋼製的密封罐及紫外線 硬化型的黏接劑(XNR5516HV ’ Nagase Ciba股份有限公 司製造)進行密封。藉由以上操作而製作實例丨的有機電 致發光元件。 (實例2) -有機電致發光元件的製作_ 、實例1、中,除了將上述結構式所表示的化合物C換成 下述結構式所表示的化合物D來作為陰極侧鄰接層以外, 與實例1同樣地製作有機電致發光元件。Lithium fluoride (LiF) as an electron injecting layer was formed by vacuum deposition on the electron transport layer by a vacuum deposition method. Then, a patterned mask (mask of the light-emitting area ^1 Γχ 2 mm) was placed on the electron 'master layer' to form a metal as a cathode by a vacuum deposition method to a thickness of 100. 58 201121359 36263pif The laminated body produced by the above operation is placed in an argon-substituted glove box, and a sealed can made of stainless steel and an ultraviolet curing type adhesive (XNR5516HV 'Nagase Ciba Limited Co., Ltd.) Made by the company) for sealing. By way of the above operation, an organic electroluminescent device of Example 制作 was fabricated. (Example 2) - Preparation of Organic Electroluminescence Element, Example 1, except that the compound C represented by the above structural formula was replaced with the compound D represented by the following structural formula as a cathode side adjacent layer, and examples 1 An organic electroluminescence device was produced in the same manner.

化合物D (實例3 ) -有機電致發光元件的製作_ 、於實例1中,除了將上述結構式所表示的化合物⑽ 成下述結構式所表示的化合物Ε (4,4,_雙(2,2_:笨基乙稀 基)苯基蒽(DPVDPAN))來作為_着接層以外,與實 59 201121359 例1同樣地製作有機電致發光元件。Compound D (Example 3) - Preparation of Organic Electroluminescence Element In Example 1, except that the compound (10) represented by the above structural formula was represented by the following structural formula (4, 4, _ double (2) An organic electroluminescent device was produced in the same manner as in Example 1, 201121359, except that the phenylene fluorene (DPVDPAN) was used as the ITO layer.

(實例4) 於實例1中,除了將陰極侧鄰接層的厚度由3 nm變 更為10 nm以外,與實例1同樣地製作有機電致發光元件。 (實例5 ) 於實例1中,除了將上述結構式所表示的BAlq變更 為於下述結構式所表示的BCP中摻有1 wt%的Li的材料 來作為電子傳輸層以外,與實例1同樣地製作有機電致發 光元件。(Example 4) An organic electroluminescence device was produced in the same manner as in Example 1 except that the thickness of the cathode-side adjacent layer was changed from 3 nm to 10 nm. (Example 5) In the same manner as in Example 1, except that BAlq represented by the above structural formula was changed to a material in which 1 wt% of Li was incorporated in BCP represented by the following structural formula as an electron transport layer. An organic electroluminescent element is produced.

60 201121359 (比較例1 ) -有機電致發光元件的製作· 於貝例1中,除了不設置陰極側鄰接層以外,與實例 1同樣地製作有機電致發光元件。 (比較例2) -有機電致發光元件的製作- 、於實例1中,除了將上述結構式所表示的化合物€換 成下述結構式絲*的化合物F來作為陰测鄰接層以 外,與實例1同樣地製作有機電致發光元件。[Comparative Example 1] - Preparation of Organic Electroluminescence Device In the first example, an organic electroluminescence device was produced in the same manner as in Example 1 except that the cathode side adjacent layer was not provided. (Comparative Example 2) - Preparation of Organic Electroluminescent Element - In Example 1, except that the compound represented by the above structural formula was replaced with the compound F of the following structural formula * as the negative adjacent layer, Example 1 An organic electroluminescence device was produced in the same manner.

化合物F (比較例3 ) 除了不設置陰極側鄰接層且將BAlq換 -有機電致發光元件的製作 於貫例1中,除了 π级罢 成BCP + Li卩外’與貫例i同樣地製作有機電致發光元件。 繼而,對於所製作的實m〜實例5及比較例1〜比較 例3的發光材料、陰極_接層及電子傳輸層,如以下般 61 201121359 36263pif 測定三重態能置。將結果不於表1中〇 &lt;三重態能量的測定&gt; 三重態能量是使用日立製作所製造的分光螢光光度計 F7000,利用相較於螢光而發光壽命更長這一情況,根據 遮蔽激發光後的顯微光致發光(PL)光譜而求出。 [表1] 磷光發光材料 陰極側鄰接居 電子脊 f輸層 種類 三重態 能量 種類 厚度 (μιη) 三重態 能量 種類 三重態 能量 比較例1 化合物B 63 無 BAlq 54 比較例2 化合物B 63 化合物F 3~~ 65 BAlq 54 比較例3 化合物B 63 無 BCP + Li 58 實例1 化合物B 63 化合物C 3 49 BAlq 54 實例2 化合物B 63 化合物D 3 48 BAlq 54 實例3 化合物B 63 化合物E 3 &lt;43 BAlq 54 實例4 化合物B 63 化合物C 10 49 BAlq 54 實例5 化合物B 63 化合物C 3 49 BCP + Li 58 接著,對於所製作的實例1〜實例5及比較例1〜比較 例3 ’如以下般測定外部量子效率、驅動電壓及驅動耐久 性(亮度半衰時間)。將結果示於表2中。 &lt;外部量子效率的測定&gt; 使用KEITHLEY公司製造的電源量測單元2400 (source measure unit 2400 )型,對各元件通入電流密度為 25 mA/cm2的直流電流而使其發光。使用T〇pc〇n公司製造 輝度計SR-3測定其輝度及發光光譜。根據該些測定結果, 藉由發光光譜換算法而算出外部量子效率。 &lt;驅動電壓&gt; 62Compound F (Comparative Example 3) The same procedure as in Example 1 was carried out except that the cathode side adjacent layer was not provided and the BAlq exchange-organic electroluminescence device was produced in Example 1, except that π was changed to BCP + Li卩. Organic electroluminescent element. Then, the luminescent materials, the cathode-connecting layer, and the electron transporting layer of the produced solid m to the example 5 and the comparative example 1 to the comparative example 3 were measured as follows: 61 201121359 36263 pif The triplet state was measured. The results are not in Table 1. 〇&lt;Measurement of triplet energy&gt; The triplet energy is a spectrofluorometer F7000 manufactured by Hitachi, Ltd., and the luminescence lifetime is longer than that of fluorescence. The photoluminescence (PL) spectrum after excitation was obtained. [Table 1] Phosphorescent luminescent material cathode side adjacent electron ridge f transport layer species triplet energy species thickness (μιη) triplet energy species triplet energy comparison example 1 compound B 63 no BAlq 54 Comparative Example 2 Compound B 63 Compound F 3 ~~ 65 BAlq 54 Comparative Example 3 Compound B 63 No BCP + Li 58 Example 1 Compound B 63 Compound C 3 49 BAlq 54 Example 2 Compound B 63 Compound D 3 48 BAlq 54 Example 3 Compound B 63 Compound E 3 &lt;43 BAlq 54 Example 4 Compound B 63 Compound C 10 49 BAlq 54 Example 5 Compound B 63 Compound C 3 49 BCP + Li 58 Next, the produced Examples 1 to 5 and Comparative Examples 1 to 3 were measured as follows. Quantum efficiency, drive voltage, and drive durability (brightness half-life). The results are shown in Table 2. &lt;Measurement of external quantum efficiency&gt; A direct current having a current density of 25 mA/cm2 was applied to each element by using a power measuring unit 2400 (source measure unit 2400) manufactured by KEITHLEY Co., Ltd. to emit light. The luminance and luminescence spectrum were measured using a luminance meter SR-3 manufactured by T〇pc〇n. Based on these measurement results, the external quantum efficiency was calculated by the luminescence spectral conversion algorithm. &lt;Drive voltage&gt; 62

201121359 JOZOjpiI 使用KEITHLEY公司製造的電源量測單元2400型, 測量直流電流通電時的驅動電壓。 &lt;驅動耐久性(亮度半衰時間)&gt; 驅動耐久性是於初期亮度2,000 cd/m2下進行恆定電 流驅動,將比較例丨及比較例3的亮度半衰時間設定為 100’以相對值來表示發光層中使用相同的磷光發光材料的 有機電致發光元件的亮度半衰時間。 [表2]201121359 JOZOjpiI uses the power supply measuring unit Model 2400 manufactured by KEITHLEY to measure the driving voltage when the DC current is energized. &lt;Drive durability (brightness half-life)&gt; Driving durability was constant current driving at an initial luminance of 2,000 cd/m2, and the luminance half-life of Comparative Example and Comparative Example 3 was set to 100' at a relative value. The luminance half-life of the organic electroluminescent element using the same phosphorescent material in the light-emitting layer is shown. [Table 2]

由表1及表2的結果得知,實例丨〜實例5與比較例j 〜比較例3相比,可實現高的發光效率與驅動耐久性的提 高。 此處,實例1〜實例5及比較例1〜比較例3中,將上 =構式所表示的化合物B (磷紐色發光材料,三重態 能董.63 kcal/mol)用於發光層中,而於代替該磷光藍色 發光材料而將下述結構式所表示的化合物G (磷光綠光發 光材料’二重態能量:58 kcal/m〇1)用於發光層中的情形 時,發光材料、陰極側鄰接層及電子傳輸層的三重態能量 63 201121359As is apparent from the results of Tables 1 and 2, the example 丨 to the example 5 can achieve higher luminous efficiency and driving durability than the comparative examples j to the comparative example 3. Here, in Examples 1 to 5 and Comparative Examples 1 to 3, the compound B (phosphorescent luminescent material, triplet energy, 63 kcal/mol) represented by the upper = configuration was used in the light-emitting layer. When the compound G (phosphorescent green light-emitting material 'doublet energy: 58 kcal/m〇1) represented by the following structural formula is used in the light-emitting layer instead of the phosphorescent blue light-emitting material, the light-emitting material is used. Triplet energy of the cathode side adjacent layer and the electron transport layer 63 201121359

Jt&gt;2C)3pit 亦成為同樣的大小關係。因此表明,即便使用卞述結構式 所表不的化合物G (磷光綠光發光材料)時,雖然發光材 料的發光波長於綠色時更短而三重態能量自身變得更小, 但Pt錯合物相同,藉由陰極側鄰接層而可獲得同樣的效 果0Jt&gt;2C) 3pit also becomes the same size relationship. Therefore, it has been shown that even when the compound G (phosphorescent green light-emitting material) represented by the structural formula is used, although the light-emitting wavelength of the light-emitting material is shorter in green and the triplet energy itself becomes smaller, the Pt complex is smaller. In the same way, the same effect can be obtained by the cathode side adjacent layer.

[產業上之可利用性] 本發明的有機電致發光元件可實現較高的發光效率與 驅動耐久性的提高’故例如可合適地用於顯示元件、顯示 器、背光、電子照片、照明光源、記錄絲、曝光光源/、、 讀取光源、標識、廣告牌、内部飾件、光通訊等。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任健習此技藝者,在微縣發明之精 和範圍内’當可作些許之更動與潤飾,因此本發明之^ 範圍當視後附之申請專利範圍所界定者為準。 ’、喪 【圖式簡單說明】[Industrial Applicability] The organic electroluminescence device of the present invention can achieve high luminous efficiency and improved driving durability. Thus, for example, it can be suitably used for display elements, displays, backlights, electronic photographs, illumination sources, Recording wire, exposure light source/, reading light source, logo, billboard, interior trim, optical communication, etc. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and those skilled in the art will be able to make some modifications and refinements within the scope and scope of the invention. The scope of the application is subject to the definition of the scope of the patent application. ‘, funeral [simple description of the map]

圖1A 是表示發光層與陰極侧鄰接層的三重態能量 的 64 201121359 關係的圖,表示陰極側鄰接層的三重態能量小於發光層的 發光材料的三重態能量的狀態。 圖1B是表示發光層與陰極側鄰接層的三重態能量的 關係的圖,表示發光層的發光材料的三重態能量相對於陰 極側鄰接層的三重態能量為相同水準以上的狀態。 _ 圖2是表示本發明的有機電致發光元件的層構成的一 例的概略圖。 【主要元件符號說明】 1 :基板 2 :陽極 3:電洞注入層 4:電洞傳輸層 5:電子阻擋層 6 :發光層 7:陰極側鄰接層(電洞阻擋層) 8:電子傳輸層 9:電子注入層 10 :陰極 Π:有機電致發光元件 - T1:三重態能量 65Fig. 1A is a view showing a relationship of triplet energy of a light-emitting layer and a cathode-side adjacent layer in a state of 64 201121359, showing a state in which the triplet energy of the adjacent layer on the cathode side is smaller than the triplet energy of the light-emitting material of the light-emitting layer. Fig. 1B is a view showing the relationship between the triplet energy of the light-emitting layer and the cathode-side adjacent layer, and shows a state in which the triplet energy of the light-emitting layer of the light-emitting layer is equal to or higher than the triplet energy of the cathode-side adjacent layer. Fig. 2 is a schematic view showing an example of a layer configuration of an organic electroluminescence device of the present invention. [Description of main component symbols] 1 : Substrate 2 : Anode 3 : Hole injection layer 4 : Hole transport layer 5 : Electron barrier layer 6 : Light-emitting layer 7 : Cathode side adjacent layer (hole blocking layer) 8 : Electron transport layer 9: Electron injection layer 10: Cathode Π: Organic electroluminescent element - T1: Triplet energy 65

Claims (1)

201121359 jozojpn 七、申請專利範圍: 1. 一種有機電致發光it件,其特徵在於:其是於陽極 與陰極之間具有至少包含至少—層發光層、及於該發光層 的陰極侧鄰接的陰極側鄰接層的有機層,且 上述陰極側鄰接層的三重態能量小於上述發光層的發 光材料的三重態能量。 2. 如申請專利範圍第1項所述之有機電致發光元件, 其中上述錢層更包含於上述陰極靖接層的陰極側鄰接 的電子傳輸層,且 上述陰極側鄰接層的三重態能量小於上述電子傳輸層 的三重態能量。 3. 如申請專利範圍第1項所述之有機電致發光元件, 其中上述陰極側鄰接層含有縮合芳香族環化合物。 4. 如申請專利範圍第1項所述之有機電致發光元件, 其中上述陰極側鄰接層含有具有下述通式(II)所表示的 芘衍生物骨架的化合物、及具有下述通式(1)所表示的蒽 衍生物骨架的化合物的至少一種, Rl R8201121359 jozojpn VII. Patent application scope: 1. An organic electroluminescent device, characterized in that it has a cathode comprising at least a layer of light-emitting layer between the anode and the cathode, and a cathode adjacent to the cathode side of the light-emitting layer. The organic layer of the side adjacent layer, and the triplet energy of the cathode side adjacent layer is smaller than the triplet energy of the light emitting material of the light emitting layer. 2. The organic electroluminescent device according to claim 1, wherein the money layer further comprises an electron transport layer adjacent to a cathode side of the cathode contact layer, and the triplet energy of the cathode side adjacent layer is less than The triplet energy of the above electron transport layer. 3. The organic electroluminescence device according to claim 1, wherein the cathode side adjacent layer contains a condensed aromatic ring compound. 4. The organic electroluminescence device according to claim 1, wherein the cathode-side adjacent layer contains a compound having an anthracene derivative skeleton represented by the following formula (II), and has the following formula ( 1) at least one of the compounds of the anthracene derivative skeleton represented, Rl R8 通式(I) 其中,上述通式(I)中,Ari及Ar2分別獨立為由經 66 201121359 —— 取代,未經取代的核碳數6〜20的芳香族環所衍生的基; 上述,香族環可經1個或2個以上的取代基取代;上述取 代基是選自經取代或未經取代的核碳數6〜5〇的芳基、經 取代或未經取代的碳數1〜5〇的烷基、經取代或未經取代 的碳數3〜50的環烷基、經取代或未經取代的碳數丨〜邓 的烷氧基、經取代或未經取代的核碳數6〜5〇的芳烷基、 •經取代或未經取代的核原子數5〜5〇的芳氧基、經取代或 未經取代的核原子數5〜50的芳硫基、經取代或未經取代 的碳數1〜50的烷氧基羰基、經取代或未經取代的矽烷 基、羧基、齒素原子、氰基、硝基及羥基;於上述芳香族 環經2個以上的取代基取代時,上述取代基可相同亦可不 同,鄰接的取代基彼此亦可相互鍵結而形成飽和或不飽和 的環狀結構; R〜R8是選自氫原子、經取代或未經取代的核碳數6 〜50的芳基、經取代或未經取代的核原子數5〜5〇的雜芳 基、經取代或未經取代的碳數丨〜咒的烷基、經取代或未 經取代的碳數3〜50的環烷基、經取代或未經取代的碳數 1〜50的烷氧基、經取代或未經取代的碳數6〜5〇的芳烷 基、經取代或未經取代的核原子數5〜50的芳氧基、經取 . 代或未經取代的核原子數5〜50的芳硫基、經取代或未經 • 取代的碳數1〜50的烷氧基羰基、經取代或未經取代的矽 烷基、羧基、il素原子、氰基、硝基及羥基;另外,鄰接 的取代基彼此亦可相互鍵結而形成飽和或不飽和的環狀结 構; 、’。 67 201121359In the above formula (I), Ari and Ar2 are each independently a group derived from an aromatic ring having an unsubstituted nucleocarbon number of 6 to 20, which is substituted by 66 201121359 -; The aromatic ring may be substituted with one or two or more substituents; the above substituent is an unsubstituted or unsubstituted aryl group having 6 to 5 fluorene, a substituted or unsubstituted carbon number of 1 〜5〇 of alkyl, substituted or unsubstituted cycloalkyl having 3 to 50 carbon atoms, substituted or unsubstituted carbon number 丨~Deng's alkoxy group, substituted or unsubstituted core carbon a 6- to 5-inch aralkyl group, a substituted or unsubstituted aryloxy group having 5 to 5 Å of a nuclear atom, a substituted or unsubstituted arylthio group having 5 to 50 atomic number, substituted Or an unsubstituted alkoxycarbonyl group having 1 to 50 carbon atoms, a substituted or unsubstituted alkylene group, a carboxyl group, a dentate atom, a cyano group, a nitro group and a hydroxyl group; or more than two or more aromatic rings When the substituent is substituted, the above substituents may be the same or different, and the adjacent substituents may be bonded to each other to form a saturated or unsaturated ring. Structure R; R8 is a hydrogen atom selected from a hydrogen atom, a substituted or unsubstituted aryl group having 6 to 50 carbon atoms, a substituted or unsubstituted heteroaryl group having a core number of 5 to 5 Å, substituted or Unsubstituted carbon number, alkyl group, substituted or unsubstituted cycloalkyl group having 3 to 50 carbon atoms, substituted or unsubstituted alkoxy group having 1 to 50 carbon atoms, substituted or Unsubstituted arylalkyl group having 6 to 5 Å carbon atoms, substituted or unsubstituted aryloxy group having 5 to 50 carbon atoms, substituted or unsubstituted aryl group having 5 to 50 carbon atoms a thio group, a substituted or unsubstituted carbon alkoxycarbonyl group having 1 to 50 carbon atoms, a substituted or unsubstituted alkylene group, a carboxyl group, an il atom, a cyano group, a nitro group and a hydroxyl group; The substituents may also be bonded to each other to form a saturated or unsaturated cyclic structure; 67 201121359 其中’上述通式⑻中Λ式(II) 代或未經取代的核 的A户分別表示 L分別為經取枚赤土/的方香族環基; 取代的伸萘基、經取伸笨基、經取代或未經 經取代的伸二苯幷石夕的伸第基或經取代或未 m為〇〜2的整數,汕為 數,t為〇〜4的整數; 、整數’ s為〇〜2的整 另外,L或Arla鍵結於祐的w 或W袖㈣位〜10:: = 1 2 3 4 5位的任-個,L 或(2其)中’於nb + t為偶數時’Arla、Ar2a、L滿足下述⑴ 68 1 ArlaMr2a (此處綠示不同結構的基 2 入广:八产時 3 (2-1 ) m#s 及/或 nb/t,或 (2-2) m=s 且 nb = t 時, 4 (2-2-1 ) L或拓分別鍵結Arla及八产上的不同 置,或 β 5 (2-2-2)於;L或^鍵結於ΑΡ及Ar2a上的相同鍵結 位置時,L或Arla&amp;Ara於芘上的取代位置為!位與6位、 或2位與7位的情形不存在。 201121359 5.如申請專利範圍第1項所述之有機電致發光元件, 其中上述陰極側鄰接層的厚度為1 nm〜10 nm。 69Wherein A of the above-mentioned formula (8) in the formula (II) or unsubstituted core, respectively, represents that L is a sulphide-based sulphate ring group; a substituted naphthyl group, a stretched base , substituted or unsubstituted diphenyl fluorene extended base or substituted or not m is an integer of 〇 〜 2, 汕 is a number, t is an integer of 〇 ~ 4; , integer ' s is 〇 ~ 2 In addition, the L or Arla bond is in the W or W sleeve (four) position ~10:: = 1 2 3 4 5 bits of any one, L or (2) in 'when nb + t is even' Arla, Ar2a, L satisfy the following (1) 68 1 ArlaMr2a (here, green shows different structures of the base 2 into the broad: eight births 3 (2-1) m#s and / or nb / t, or (2-2) When m=s and nb = t, 4 (2-2-1) L or extension is respectively connected to Arla and eight different productions, or β 5 (2-2-2); L or ^ is bonded to When the same bonding position on Ar2a is used, the substitution position of L or Arla&amp;Ara on the 芘 is not in the position of ! and 6 or 2 and 7. 201121359 5. If the patent application is the first item The organic electroluminescence device, wherein the thickness of the cathode side adjacent layer 1 nm~10 nm. 69
TW099135058A 2009-11-06 2010-10-14 Organic electroluminescence element TWI538560B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009255347 2009-11-06

Publications (2)

Publication Number Publication Date
TW201121359A true TW201121359A (en) 2011-06-16
TWI538560B TWI538560B (en) 2016-06-11

Family

ID=43969848

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099135058A TWI538560B (en) 2009-11-06 2010-10-14 Organic electroluminescence element

Country Status (3)

Country Link
JP (1) JP5761962B2 (en)
TW (1) TWI538560B (en)
WO (1) WO2011055608A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012008331A1 (en) * 2010-07-12 2012-01-19 出光興産株式会社 Organic electroluminescent element
GB2484680B (en) * 2010-10-19 2013-06-05 Cambridge Display Tech Ltd Polymer and organic light-emitting device
US9299942B2 (en) * 2012-03-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
KR102285527B1 (en) 2012-08-03 2021-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101016164B1 (en) * 2002-10-09 2011-02-17 이데미쓰 고산 가부시키가이샤 Organic electroluminescent device
US7541097B2 (en) * 2003-02-19 2009-06-02 Lg Display Co., Ltd. Organic electroluminescent device and method for fabricating the same
JP4829486B2 (en) * 2004-08-04 2011-12-07 Jnc株式会社 Organic electroluminescence device
US20070252516A1 (en) * 2006-04-27 2007-11-01 Eastman Kodak Company Electroluminescent devices including organic EIL layer
JP2007221028A (en) * 2006-02-20 2007-08-30 Konica Minolta Holdings Inc Organic electroluminescence element, display, and illumination device
JP4943199B2 (en) * 2006-03-21 2012-05-30 株式会社半導体エネルギー研究所 Oxadiazole derivatives
JP2007273573A (en) * 2006-03-30 2007-10-18 Canon Inc Organic light-emitting element
US20070252517A1 (en) * 2006-04-27 2007-11-01 Eastman Kodak Company Electroluminescent device including an anthracene derivative
JP2009004491A (en) * 2007-06-20 2009-01-08 Fujifilm Corp Organic electroluminescent element
EP2166592A4 (en) * 2007-07-07 2012-04-18 Idemitsu Kosan Co Organic el device
JP2009016693A (en) * 2007-07-07 2009-01-22 Idemitsu Kosan Co Ltd Host material, and organic el element
US20090191427A1 (en) * 2008-01-30 2009-07-30 Liang-Sheng Liao Phosphorescent oled having double hole-blocking layers

Also Published As

Publication number Publication date
TWI538560B (en) 2016-06-11
WO2011055608A1 (en) 2011-05-12
JP2011119721A (en) 2011-06-16
JP5761962B2 (en) 2015-08-12

Similar Documents

Publication Publication Date Title
TWI395510B (en) Blue light emitting organic electroluminescent components
TWI375486B (en) Oleds with mixed host emissive layer
Chen et al. Superior upconversion fluorescence dopants for highly efficient deep-blue electroluminescent devices
JP4581355B2 (en) Organic electroluminescence device
JP5746269B2 (en) Organic light-emitting device having phosphorescent-sensitized fluorescent light-emitting layer
JP5328356B2 (en) Electron blocking layer for highly efficient phosphorescent organic light-emitting devices
KR101668044B1 (en) Oled with high efficiency blue light-emitting layer
TW200540245A (en) Improved electroluminescent stability
TW200901530A (en) Long lifetime phosphorescent organic light emitting device (OLED) structures
TWI354694B (en) Materials and structures for enhancing the perform
KR100537620B1 (en) Carbazole containing compound and organic electroluminescent display device
TW200531592A (en) Organic electroluminescent device
JP2009534846A (en) Multiple dopant light emitting layer organic light emitting device
JP2008535266A (en) OLED using direct injection into triplet state
KR20050052473A (en) Organic light emitting materials and devices
JP2011171269A (en) Organic electric field light-emitting element
TW200540251A (en) Material for organic electroluminescent element and organic electroluminescent element employing the same
JP5497510B2 (en) Organic electroluminescence device
TWI483936B (en) Novel compound for organic photoelectric device and organic photoelectric device including the same
TW201212322A (en) Organic electroluminescence device
US10020453B2 (en) Organic light emitting display device
TW201114320A (en) Organic electroluminescent element
TW201121359A (en) Organic electroluminescence element
TWI376983B (en)
Kwon et al. Bipolar host materials for red and green phosphorescent OLED