TW201212322A - Organic electroluminescence device - Google Patents

Abstract

An organic electroluminescence device is described, including, between the anode and the cathode thereof, an organic layer including a luminescent layer and an electron transport layer at least. The luminescent layer includes at least two layers doped with a luminescent material and at least one layer not doped with a luminescent material. The electron transport layer contains two or more kinds of reductive dopants. An adhesion improvement layer is disposed between the organic layer and at least one of the anode and the cathode.

Description

201212322 f L' '* VI. Description of the Invention: [Technical Field] The present invention relates to an organic electroluminescent device (hereinafter sometimes referred to as "organic electroluminescent device", "organic [component]" Wait). [Prior Art] Organic electroluminescence devices have the characteristics of self-luminescence and high-speed response, and are expected to be applied to flat panel displays, especially self-assembled layers of electron transporting organic thin films (hole transport layers) and electron transporting organic thin films (electrons). Since the report of the two-layer type (stacking type) element of the transmission layer, a large-area light-emitting element that emits light at a low voltage of v or less has been attracting attention. The laminated organic EL element is based on an anode/hole transport layer/light-emitting layer/electron transport layer/cathode, wherein the light-emitting layer can have the hole transport layer or the electron transport layer as the two-layer type described above. Features. In such an organic electroluminescence device, it is known that the luminous efficiency is lowered as the temperature at the time of use increases, and the durability is deteriorated. Therefore, various studies have been made to improve these properties. For example, Japanese Laid-Open Patent Publication No. 2009-37981 proposes an organic electroluminescent device comprising a light-emitting layer comprising: two or more layers of a light-emitting material doped with a light-emitting material, and no light-emitting material One or more layers of luminescent material undoped layer. Further, Japanese Laid-Open Patent Publication No. 2009-99783 discloses an operation of including two kinds of reducing doping f in an interface region between a cathode and an organic thin film layer (see paragraph [0195]). Further, Japanese Laid-Open Patent Publication No. 2009-16693 discloses the provision of an adhesion improving layer containing an inorganic compound which is in contact with at least one of the anode 201212322 and the cathode (see paragraph [0113]). However, when the techniques described in the prior art documents are used alone, it is possible to suppress the decrease in luminous efficiency at high luminance, but it is not possible to suppress deterioration in durability under high luminance. Therefore, it is now desired to provide rapid protection against organic electricity. An organic electroluminescence element that reduces the luminous efficiency in a high-luminance region of a large problem of the excitation element and improves the durability at the time of high-brightness use. SUMMARY OF THE INVENTION An object of the present invention is to provide an organic electroluminescence device which can prevent a decrease in luminous efficiency in a high-luminance region and improve durability in use in high-brightness use. In order to solve the above problems, the inventors have repeatedly studied and found that (A) the light-emitting layer includes at least two luminescent material-exchange layers and at least one luminescent material undoped layer, which can increase the interface that contributes to light emission. (B) doping two or more kinds of reducing dopants in the electron transport layer to improve thermal conductivity; and (C) providing a adhesion improving layer containing an inorganic compound between the organic layer and the electrode to improve heat dissipation In addition, by suppressing the temperature rise under high luminance, it is possible to obtain an organic electroluminescence device in which not only the decrease in luminous efficiency in the high-luminance region is suppressed but also the durability in high-brightness use is improved by the multiplication effect of the above-described methods. The present invention is based on the above findings of the present inventors, and the method for solving the above problems is as follows. That is, <1> an organic electroluminescence device comprising an organic layer containing at least a light-emitting layer and an electron transport layer between the anode and the cathode. The luminescent layer comprises at least two luminescent material doped layers and at least bismuth luminescent material non-doped yttrium layer, 4 201212322" or more reducing dopants" and the organic layer and the anode and the yin and the middle to 7 include inorganic The adhesion improving layer of the compound. <2> The organic electroluminescent device according to <1>, wherein the thickness of the undoped layer of the bismuth material is larger than the thickness of the doped layer of the luminescent material. <3> The organic electroluminescent device according to [3], wherein the domain material constituting the non-doped luminescent material has the same composition as the host material of the doped layer of the hair ray. <4> The organic electroluminescent device according to <1>, which comprises an adhesion improving layer containing an inorganic compound between the organic layer and the cathode. <5> The organic electroluminescent device according to <4>, wherein the inorganic compound is at least one selected from the group consisting of LiF, Li2, MgF2, CaF2, NaF and SiO. <6> The organic electroluminescent device according to <1>, wherein the reducing dopant is at least two selected from the group consisting of Li, K and Cs. <7> The organic electroluminescent device according to <1>, wherein the content of the above-mentioned reducing dopant is 0.01% by weight (wt%) to 3% by weight. <8> The organic electroluminescent device according to <1>, wherein the electron transport layer sequentially includes a first electron transport layer adjacent to the light emitting layer and a second electron transport layer adjacent to the first electron transport layer from the anode side. The second electron transport layer contains two or more kinds of reducing dopants, and the first electron transport layer contains the same material as the second electron transport layer except for the above-mentioned reducing dopant. <9> The organic electroluminescent device according to <8>, wherein the first electron transport layer has an average thickness of 5 mn to 15 nm. The above problems of the prior art can be solved by the present invention, and

5 S 201212322 An organic electroluminescence device that can prevent deterioration in luminous efficiency in a high-luminance region and improve durability at the time of high luminance use. [Embodiment] (Organic Electroluminescent Device) The organic electroluminescent device of the present invention includes an organic layer containing at least a light-emitting layer and an electron transport layer between an anode and a cathode, and may further include other layers as needed. <Light Emitting Layer> ^ The above light emitting layer includes at least two layers of luminescent material doped layers and at least one layer of luminescent material undoped layers. In the light-emitting layer structure, when a voltage is applied between the anode and the cathode, electric charges are injected into the light-emitting layer. Thus, the holes recombine with the electrons to generate excitation energy, and the excitation energy moves to the luminescent material to emit light. Recombination of the charge is produced in either of the luminescent material doped layer and the luminescent material undoped layer. Further, excitons of the doped layer of the luminescent material need not be said that the excitons of the undoped layer of the luminescent material also move energy to the luminescent material of the doped layer of the luminescent material to contribute to luminescence. The recombination is particularly easy to occur at the interface between the layers, so that a plurality of interfaces are formed in the light-emitting layer, so that the generation of excitons is generated not only at the two interfaces of the light-emitting layer but also inside. As a result, the excitation energy spreads as a whole in the light-emitting layer, and the heat generated in the light-emitting layer can be prevented from being concentrated. In the present invention, not only a doped layer of a light-emitting material but also a non-doped layer of a light-emitting material containing no light-emitting material is provided, thereby forming a plurality of interfaces in the light-emitting layer. Further, even in the case where the luminescent material undoped layer is provided in the above manner, the excitation energy generated in the luminescent material undoped layer is also moved to the luminescent material 201212322. The luminescent material of the doped layer contributes to luminescence. Preferably, the luminescent material is preferably 0. 1 Wt% or more and 30 wt% or less with respect to the above-mentioned luminescent material doped layer. Flat light effect: With this structure, not only the decrease in the rate due to concentration extinction but also the high-efficiency light emission can be obtained. Here, if the rich sound of the luminescent material with respect to the doped layer of the luminescent material is less than 0.1% by weight, it is difficult to form a luminescent material doped layer having a uniform concentration, and the efficiency is also low. If the concentration of the luminescent material relative to the doped layer of the luminescent material exceeds 30 wt%, in order to avoid concentration extinction, the thickness of the luminescent material doped layer must be thinned so that the concentration of the luminescent material relative to the entire luminescent layer is decreased. Difficulty; or the luminescent material undoped layer must be thickened so that the exciton energy generated in the luminescent material undoped layer cannot contribute to luminescence in the luminescent material doped layer. Further, the concentration of the luminescent material with respect to the doped layer of the luminescent material is more preferably 〇_5 wt% or more and 25 wt% or less '0.5 wt% or more and 20 wt% or less. In the present invention t, it is preferred that the luminescent material undoped layer is disposed thicker than the luminescent material doped layer. If the luminescent material undoped layer is thicker than the luminescent material doped layer, the luminescent material concentration of the entire luminescent layer can be lowered even if the luminescent material doped layer has a high luminescent material concentration. Therefore, it is also possible to control the doping to a low concentration, which is advantageous for the improvement of mass productivity. In the present invention, 'the thickness of the non-doped layer of the luminescent material is larger than the thickness of the doped layer of the luminescent material', so that the luminescent material concentration of the entire luminescent layer is dilute even in the case of increasing the concentration of the luminescent material of the doped layer of the luminescent material. 201212322 The effect of release is also high, and it can effectively prevent concentration extinction. The thickness of the non-doped layer of the luminescent material is preferably 〇1 nm or more and 5 〇 nm or less, more preferably 〇45 nm or more and 30 nm or less, and particularly preferably 〇9 聪 or more and 15 nm or less. The thickness of the doped layer of the above-mentioned light-emitting material is preferably from nm to 2 nm, more preferably from 0.5 nm to 15 nm. With such a structure, the excitation energy generated in the undoped layer of the luminescent material can be moved to the luminescent material of the luminescent material doped layer, and the luminous efficiency can be improved. In the present invention, since the luminescent material undoped layer and the luminescent material doped layer are set to be open, even in the case of using the trapping luminescent material, the charge is not uniformly present in the entire luminescent layer, but is excessive In the luminescent material doped layer 2, no unnecessary electric field is generated in the luminescent material undoped layer, and it does not become an obstacle to charge injection. Therefore, even in the case of using a charge trapping luminescent material, good luminous efficiency can be maintained. In the present invention, the host material constituting the doped layer of the luminescent material preferably has the same composition as the host material constituting the undoped layer of the luminescent material. With such a structure, for example, in the case of forming a light-emitting layer by vapor deposition, when a light-emitting material doped layer is formed, a light-emitting material and a host material are evaporated, and when the light material is not doped, only by closing the light-emitting material The baffle can only evaporate the body material. This simplifies the manufacturing steps of the organic electroluminescent device. In the present invention, the two or more layers of the light-emitting material doping layers may each contain a light-emitting material exhibiting a different light-emitting color. For example, if three layers of luminescent material doped layers each containing red, blue, and green luminescent materials are combined, the organic electroluminescent device as a whole obtains 201212322 f white luminescence. - Luminescent material - Any of the above phosphors and phosphorescent materials can be used. - Light-blocking luminescent material - The above-mentioned phosphorescent luminescent material is not particularly limited and may be appropriately selected depending on the purpose, for example, a complex compound containing a transition metal atom or a lanthanoid atom. The above transition metal atoms are, for example, ruthenium, osmium, kiln, crane, chain, iron, silver, 16 and the like, of which the preferred ones are ruthenium, silver and ruthenium, and the most preferred ones are silver and ruthenium. The above lanthanide atoms are, for example, 镧, 钸, 镨, 鈥, 钐, 铕, this, test, 镝, 鈥, series, chain, 镱, 锦, etc., among which the best ones are Syria, Pin, IL. The ligand of the above complex is, for example, "c〇mprehensive Coordination Chemistry" by G. Wilkins〇n et al., published by Pergamon Press in 1987, by H. Yersin and by Springer Verlag in 1987. The publication of "Photochemistry and ph〇t〇卿_of Coordination ComP〇unds", and the coordination described in "Organic Metal Chemistry_Basic and Applied_" published by Hiroshi Akabane in 1982 Son and so on. + a specific ligand such as a dentate ligand (preferably a gas ligand), an aromatic carbocyclic ligand (for example, a cyclopentadienyl anion, a benzene anion or a naphthyl anion #), and a miscellaneous Relaxation group (such as phenyl ", benzoquinoline, quin〇lin〇1, bipyridyl or phenanthmline, etc.), diketone ligand (such as acetamidine) Acetone, etc., 201212322 carboxylic acid ligand (such as acetic acid ligand, etc.), alcoholate (such as phenolate ligand, etc.), carbon monoxide ligand, === gas base Ligand and the like. Among the ligands, a transition metal atom is also used, and the other two complexes may also contain different kinds of:: a multinuclear complex. What is the county luminescent material is an atom. These mismatches are complexes, but are not limited thereto.

201212322" 201212322

The photoluminescent material containing the silver-containing complex is not particularly limited, and may be appropriately selected according to the purpose, and is preferably any one of the following general formula (1), general formula (2), and general formula (3). The compound represented. 12 201212322 (R11),

X&gt; ml

M2 3-n (R12)

&lt; η Μ 3-n ; m2 Formula (1) Formula (2) Formula (3) In the above formula (1), formula (2) and formula (3), n represents i to 3 Integer. X-Y represents a double tooth ligand. Ring A represents a ring structure which may contain any of a nitrogen atom, a sulfur atom and an oxygen atom. Rll represents a substituent, and ml represents 0 to 6. When Μ is 2 or more, the adjacent R11 may be bonded to each other to form a ring which is disubstituted: either of the enemy η and the oxygen atom, and the ring may be 2 to 1, when the substituent is not substituted, m2 An integer representing 0 to 4. The m2 sulfur atom and the oxygen material can be used to ride each other and contain a nitrogen atom. Further, the ring of RU and Han 12 can be further substituted by a substituent such that any one of them can be bonded to form a nitrogen atom, a sulfur atom and an oxygen coat. The read ring can be further substituted with a substituent. 13 201212322 The above ring A represents a ring structure which may contain any of a nitrogen atom, a sulfur atom and an oxygen atom. A 5-membered ring or a 6-membered ring is suitably exemplified. This ring may be substituted with a substituent. X-Y represents a bidentate ligand, and a monoanionic ligand of a double tooth is suitably exemplified. Double-tooth monoanionic ligands such as pic〇linate (pic), acetylacetonate (acac), dipivaloylmethanate (di-butyl acac) Wait. The ligand other than the above is, for example, a ligand described in pages 89 to 91 of Lamansky et al., International Publication No. 2002/15645. The above substituents R11 and R12 are not particularly limited, and may be appropriately selected depending on the purpose, for example, an aryl group which may contain a halogen atom, an alkoxy group, an amine group, an alkyl group, a cycloalkyl group, a nitrogen atom or a sulfur atom, or may be used. Aryloxy group containing a nitrogen atom or a sulfur atom "The substituents may be further substituted. When RU and R12 are adjacent to each other, they may be bonded to each other to form a ring which may contain a nitrogen atom, a sulfur atom or an oxygen atom, and a 5-membered ring or a 6-membered ring is preferably used. This ring may be further substituted with a substituent. The specific compound represented by any one of the above formula (1), formula (2) and formula (3) is, for example, the following, but is not limited to these compounds.

201212322 F

15 S 201212322 (M2)

--ts) 0-11)

16 201212322 ^

-17-17) α-21)

17 201212322, α-25)

Other examples of the above phosphorescent material include the compounds shown below. D-1 D-3 D-2

D-7 D-8

18 201212322 r

DHO D-9

D-11

D-17 CM8

D-19

19 201212322 -- Fluorescent luminescent material -- The above fluorescent luminescent material is not particularly limited and may be appropriately selected according to the purpose, for example, benzoxazole, abbreviated imidazole, benzothiazole, styrylbenzene, polyphenylene, and Phenyl butadiene, tetraphenylbutadiene, naphthyl imine, coumarin π bottom ' 'purinal soil _ (perjn〇ne). Dioxadiazine, aldazine, 0-bite, cyclopentadiene, bisstyrylhydrazine, quinacridone, pyrrolidine pyridine, thiadiazolidine, cyclopentadiene, benzene Vinylamine, aromatic dimethyiidyne compound, condensed polycyclic aromatic compound (Pyrene, pefylene, rubene, pentacene) Etc), various metal complexes represented by the metal complex of 8_quinol, a pyrromethene complex or a rare earth metal complex, polythiophene, polyphenylene, polyphenylene oxide, etc. A polymer compound, an organic decane or a derivative of these compounds, etc.: Among these compounds, specific examples of the above-mentioned fluorescent luminescent material are, for example, the following compounds 'but are not limited thereto. 201212322

- Host material - The above host material preferably contains at least one of a hole transporting host material and an electron transporting host material. - Hole-transporting host material - The above-mentioned hole-transporting host material has a free potential Ip of preferably 51 eV or more and 6 3 eVa, more preferably 5.4 eV or more, from the viewpoint of improving durability and lowering driving voltage. Below 6.1 ev, it is better to be 5.6 eV or more and 6.0 eV or less. Further, from the viewpoint of improving durability and lowering the driving voltage, the electron affinity Ea is preferably 1, 2 eV or more and 3.1 eV or less, more preferably j 4 5 21 201212322 eV or more 3. GeV or less 'more preferably 18 or more 2 9eV or less. * Such a hole transporting host material is, for example, pyrrole, carbazole, nitrogen, carbene, diazole, oxazole, oxadiazole, pyrazole, imidazole, polyarylalkane, pyrazoline, pyrazole Ketones, phenylenediamines, arylamines, amine-substituted chalcones (-Icon small styrene hydrazine, flu〇ren〇ne, hydrazine, stilbene, silazane, aromatic a tertiary amine compound, a styrene-based δ-derivative, a fluorene-based methyl hydrazine compound, a p〇fphyrin compound, a polydecane compound, a poly(N-vinylcarbazole), an aniline system a conductive polymer oligomer such as a copolymer, a thiophene oligomer or a polythiophene, an organic stone, a carbon film, or a derivative of these compounds. Among these compounds, a 'hole transporting host material is preferably The salivary compound, the nitrogen compound or the carbene compound is particularly preferred as the miso compound. Specific compounds as the above-mentioned hole transporting host material are, for example, the following compounds, but are not limited thereto.

22 201212322 r Η-今十5

Η-1 Τ Η-12

23 201212322

H "21:

H-22

24 201212322

- Electron transporting host material - The host material used in the present invention can use an electron transporting host material having excellent electron transport properties similarly to a hole transporting host material having excellent hole transport properties. The electron transporting host material preferably has an electron affinity Ea of 2.5 eV or more and 3.5 eV or less, more preferably 2_6 eV or more and 3.2 eV or less, and particularly preferably 2.8 eV or more and 3.1 eV from the viewpoint of improving durability and lowering driving voltage. the following. Further, from the viewpoint of improving durability and lowering the driving voltage, the free potential Ip is preferably 5.7 eV or more and 7.5 eV or less, more preferably 25 201212322 5.8 eV or more and 7.0 eV or less, and particularly preferably 5.9 eV or more and 6.5 eV or less. Such an electron transporting host material is, for example, a bite, a bite, a triple π, an imidazole, a pyrazole, a triazole, an oxazole, an oxadiazole, an anthrone, an anthraquinodimethane, an anthrone. (anthr〇ne), diphenylbenzoquinone, thiopyran dioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, fluorochemical aromatic a tetracarboxylic anhydride such as a compound, naphthalene or anthracene, phthalocyanine, or a derivative of such a compound (which may form a condensed ring with other rings), a metal complex of 8 quinolinol derivatives or a metal phthalocyanine, Various metal complexes represented by metal complexes in which benzoxazole or benzothiazole is a ligand are used. The electron transporting host material is preferably a metal complex, an azole derivative (benzimidazole derivative, imidazolium pyridine derivative, etc.) or a azine derivative (pyridinium derivative, money derivative, three biological organism, etc.). In terms of durability, it is particularly preferred to be a metal-missing compound. More preferably, the above metal complex compound has a metal complex containing a ligand coordinated to at least a -Wei atom, an oxygen atom or a sulfur. The metal ion in the above metal complex is not particularly limited and may be appropriately selected according to the purpose, and is preferably, for example, cerium ion, magnesium ion, aluminum ion, gallium ion, zinc ion, indium ion, tin ion, platinum ion or palladium ion. Sub, hetero, gallium, zinc, hetero or peak, especially good ^ Ming ion, zinc ion or ion. The ligand contained in the above metal complex is not particularly limited and may be appropriately selected from known ligand groups depending on the purpose, for example, "Ηϋη" and issued by Spnnger-Verlag Publishing Co., Ltd. in 1987.

S 26 201212322 and Photophysics 〇f Coordinad〇nc〇mp face", Yamamoto Akira and the "Organic Metal Chemicals and Applications-J and other book titles" issued by the Sanghua House Publishing House in 1982. The ligand is preferably a nitrogen-containing heterocyclic ligand (preferably having a carbon number of from 1 to 30, more preferably from 2 to 20, more preferably from 3 to 15), and may be a single-dentate ligand or a double-dentate or higher. The ligand is a double-toothed tooth with a recording base of less than six teeth. In addition, a mixed yarn of a double-toothed six-phase yarn and a single-toothed one is also preferred. The above-mentioned ligand is, for example, a azine ligand. Base (for example, pyridine ligand, hydrazine, ligand, triple, etc.), silk group linkage (for example, phenylbenzene benzoate, benzyl benzene (tetra) 'weisi, phenyl Savory ligand, fresh base _ pin 吼 Wei Si Pu Shi base ligand (carbon number 1 ~ 30 is better, 1 ~ 20 is better, Bu (7) is better, such as methoxy, ethoxy, butyl thiol, 2-Ethylhexyloxy or the like), the number of aryloxy ligands is preferably 6 to 3, preferably 6 to 20, more preferably 6 to 12, such as phenoxy, 丨-naphthyloxy, 2-naphthyloxy Base, 2,4,6-trimethylphenoxy 4-biphenyloxy group, etc.) Further, for example, a heteroaryloxy ligand (better M0, more preferably ^20, more preferably 1 to 12, such as pyridyloxy, pyrazinyloxy, pyrimidinyloxy) Base, quinoxalyl, etc.), sulfur-based ligand (preferably 1 to 3 carbon atoms, more preferably 1 to 2, more preferably U, such as methylthio, ethylthio, etc.), aromatic sulfur Base ligand (carbon number = ~ 30 is preferred '6 to 20 is better, 6 to 12 is preferred, such as phenylthio, etc.), heteroarylthio ligand (carbon number 丨 ~ as better ' ijO more Good, 丨~12 especially good, J is like 唆石瓜基, 2-本幷. 米0 sits sulfur base, 2-幷幷 幷 恶 唾 sulphur, 2 苯 幷嗟 ° sit thio, etc.), hard Alkoxy ligand (comparative carbon number 1 to 30, preferably 3 to 25 more preferably 6 to 20, such as triphenyldecyloxy, triethoxydecaneoxy)

27 S 201212322 oxy, etc.), a hydrocarbon group _ sub-ligand (better carbon number, 6 to 25 is better, 6 to 2G is more preferable, such as phenyl cation, ί, sulfhydryl anion, etc.), aromatic Family heterocyclic anion ligand (c. 1~30 is preferred, 2~25 is more preferred, 2~20 is especially preferred, such as transanion, azole anion, triazole anion, oxazole = ion, benzene anion, jing Ion = ^ L (lndGlenine) anionic ligand, etc. These are nitrogen-containing heterocyclic ligands, aryloxy ligands, heteroaryl 'aromatic hydrocarbon anion ligands or aromatic = anion Examples of the electron-transporting main riding material of a nitrogen-containing heteroweisi, an aryloxy group, a aryl group, an aromatic hydrocarbon anion ligand or an aromatic metal complex, such as Japan Hearts, special employment _21, special brain _22 test, ^ 2004-221065 &gt; 2004-221068 &gt; 2004-327313 Looking for the compounds described in each of the publications. The electron transporting host material can specifically exemplify the following Compounds, but are not limited to these compounds.

^2

28 201212322

E-12 E~13 E-14

29 5 201212322 ε-17 Ε-18

Ε-19 Ε-2ΰ

Ε-22 Ε-21

The method for producing the light-emitting layer is to use a vapor deposition device having a plurality of vapor deposition sources and a baffle plate that empties vaporization materials from the respective vapor deposition sources, and the steaming device is used for the steaming.

S 30 201212322 and less - one is provided with a dopant material constituting the above-mentioned luminescent material, and ugly is provided with a main body material constituting a main body of the upper luminescent material doping layer ===material undoped layer, and then the main body The vapor deposition source of the material is heated, and the above-mentioned storage material doping layer and the luminescent material impurity layer are mechanically opened and closed by the baffle. When such a manufacturing method is used, both the vaporized host material and the doped material are formed when the baffle is opened, and a luminescent material layer in which the domain is doped with the luminescent material is formed. On the other hand, the evapotranspiration of the dopant material is masked when the baffle is closed, and only the host material of the bond is formed to form an undoped layer of the luminescent material. Therefore, the step of forming the light-emitting layer can be simplified by alternately forming the light-emitting material doping layer and the light-emitting material undoped layer by simply opening and closing the shutter. <Electron Transport Layer> The electron transport layer includes a first electron transport layer and a second electron transport layer, and has a function of acquiring electrons from the cathode or the cathode side and transporting it to the anode side. The electron transport layer has a sequence from the anode side. And comprising a laminated structure of the first electron transport layer adjacent to the light-emitting layer and the second electron transport layer adjacent to the first electron transport layer. <<First Electron Transport Layer>> The material of the first electron transport layer is not particularly limited and may be appropriately selected depending on the purpose, for example, 2,9-dimercapto-4,7-diphenyl-1 represented by the following structural formula. , 10 phenocuproin (BCP), tris (8-quinolinolato) aluminum (Alq) represented by the following structural formula, etc. with 8-quinolinol or its derivative The organometallic complex of a ligand, bis-(2-mercapto-8-hydroxyquinoline)-4-(phenyl-phenolate)-aluminum(III) represented by the following structural formula 31 201212322 (BAlq) Quinoline derivatives, serotonin, bis-sodium derivatives, triazole derivatives, phenanthroline derivatives, anthracene derivatives, pyridine derivatives, mouth bite derivatives, quinoxaline derivatives, a phenyl benzoquinone derivative, a nitro substituted fluorene derivative, and the like.

The first electron transport layer may be, for example, a vapor deposition method, a wet film formation method, an electron beam method, a plate plating method, a reactive plating method, a molecular beam stray crystal (MBE) method, or a cluster ion beam. The method, the ion plating method, the plasma polymerization method (high-frequency excitation ion bonding method), the molecular layering method, the laser beam (LB) method, the printing method, the transfer method, and the like are appropriately formed. The average thickness of the first electron transport layer is preferably 5 nm to 15 32 201212322 r nm, more preferably 7 nm to 12 nm. When the average thickness of the first-electron transport layer is less than 5 nm, the doping metal contained in the second sub-subject emission may have a decrease in luminous efficiency, and if it exceeds 15 nm, the heat dissipation effect may disappear. And there is a case where the durability is lowered under high competition. The average thickness of the first electron-transporting layer can be, for example, measured by a stylus-type surface shape measuring device, which averages the average value of the thickness difference at three. <<Second Electron Transport Layer>> The material of the second electron transport layer includes the same organic compound as the first electron transport layer, and two or more kinds of reducing dopants. When the second electron-transporting layer containing the reducing dopant is adjacent to the light-emitting layer, the light-emitting efficiency is greatly lowered by the metal extinction. The above-mentioned reducing dopant is defined as a substance capable of reducing an electron transporting compound. Therefore, 'as long as it is a compound having a certain reducing property, it is not particularly limited, and may be appropriately selected according to the purpose, and may be suitably selected from the group consisting of an alkali metal dibasic earth metal, a rare earth metal, an alkali metal oxide, an alkali metal compound, An oxide of an alkaline earth metal, a tooth of an alkaline earth metal, an oxide of a rare earth metal, a tooth of a rare earth metal, an organic complex of an alkali metal, an organic complex of a soil metal, and an organic complex of a rare earth metal More specifically, at least two kinds of Y, more preferably, preferred reducing dopants are exemplified by alkali metals such as bells, nano, bells, samarium, and planing, alkaline earth metals such as calcium, barium, strontium, etc.; 》, 铯, 伽, 鏠. * Among some reducing dopants, it is preferred to combine the chain with potassium, bell and strontium, strontium and sodium, strontium and potassium, and bismuth, strontium and sodium, strontium and potassium, and the thermal conductivity is changed to cover 33 201212322 In terms of 'the best ones are clocks and unloading, chain and shackles. The content of the above reducing dopant is preferably from 0.01 wt% to 3 wt%, more preferably from 20.05% to 2 wt%. If the content is 〇1 wt%, there is a case where the thermal conductivity improvement is insufficient, and if the absorption exceeds 3 wt%, the efficiency is drastically lowered. The U metal describes the second electron transport layer in the same manner as the first electron transport layer, for example, a film formation method, an electron beam method, a hetero method, a reactive method, a tetramine beam crystal method, a Cai ion beam method, and an ion. Money method, law ((4) stimulating crane ship), molecular layering method, LB method, P brush method, transfer method and other methods are appropriately formed. The average thickness of the second electron transport layer is preferably 10 nm to 1 () () nm ', more preferably 2 〇 nm to 5 〇 nm. If the average thickness of the second electron-transporting layer is less than 1 〇 nm, the efficiency may be lowered, and if it exceeds nm, the dynamic voltage may rise. The average thickness of the second electron-transporting layer can be measured in the same manner as the average thickness of the first electron-transporting layer. <Electrode> The organic electroluminescent device of the present invention comprises a pair of electrodes, that is, an anode and a cathode. In terms of the properties of the organic electroluminescence device, at least one of the anode and the cathode is preferably transparent. Generally, the anode may have a function as an electrode for supplying a hole to the organic compound layer, and the cathode may have an organic The function of the electrode for injecting electrons in the compound layer is sufficient. The shape, structure, size, and the like of the above-mentioned electrodes are not particularly limited and may be

S 34 201212322 Electromechanical use 'The purpose is to choose from the known electrode materials. The material of the compound Hi is preferably exemplified by a metal, an alloy, a metal oxide, a conductive compound, or a mixture of these materials. _% pole _ The material constituting the anode is, for example, a conductive metal oxide such as a tin oxide (ATO, tin oxide, oxidized, indium oxide, oxidized steel tin (ITO), or indium zinc oxide (IZO)). Metals such as gold, silver, collateral, and recording; mixtures and preparations of such metals and conductive gold; inorganic conductive materials such as copper and copper sulfide; organic conductive materials such as polyaniline, phenanthrene, and polyscale 'Or a laminate of these materials with ITO, etc. These materials are ten, preferably conductive metal oxides; in terms of productivity, high electrical conductivity, transparency, etc., the best one is ΙΤΟ. - Cathode - Composition Cathode materials such as: metal (such as Syria, sodium, unloading, planing, etc.), alkaline earth metals (such as magnesium, calcium, etc.), gold, silver, lead, aluminum, sodium-potassium alloy, Zhongming &amp; gold, magnesium - A rare earth metal such as a silver alloy, indium or bismuth, etc. These materials may be used alone or in combination, and two or more kinds of materials may be used in combination with respect to stability and electron injectability. In terms of aspect, it is preferably an alkali metal or an alkaline earth metal; In terms of the above, it is preferably a material mainly composed of Is. The above-mentioned aluminum-based material has an alloy of pure aluminum, aluminum and 0.01 wt% to 10 wt% of an alkali metal or an alkaline earth metal or with these materials. Mixture (such as lithium-aluminum alloy, magnesium-aluminum alloy, etc.) 35 show 12322, row, === system, can be immersed by known methods, ionic plating, physical steaming, plasma CVD, etc. Chemical-deposition ((10))' The suitability of the materials constituting the electrode is considered on the substrate. For example, the IT0 method is selected to form the electrode in the high-frequency sputtering method, and when the electrode material is used, when DC or the like is used as the cathode material, : The formation of 1 i is formed. The metal is formed by the method of Kawasaki, etc. The seed is made up of two or more kinds of materials at the same time or in sequence. 2 'If the above-mentioned electric scale is formed, it can be visualized by using the etch: T' can also be performed by vacuum deposition or sputtering using a laser such as a laser, or by a lifting method such as lift_QffmethGd or printing. Layer> In the present invention, at least one of an organic layer and an anode and a cathode In the adhesion improving layer containing an inorganic compound, it is preferable that the adhesion improving layer containing an inorganic compound is included between the organic layer and the cathode in terms of easily improving heat dissipation. The function of the inorganic compound layer is as an adhesion improving layer. The preferred inorganic compound to be used in the inorganic compound layer is not particularly limited and may be appropriately selected depending on the purpose, for example, an alkali metal oxide, an alkaline earth metal oxide, a rare earth metal oxide, a metal tooth, a soil metallization, Rare earth metal halides, SiOx, A10x, SiNx, SiON, A10N, GeOx, LiOx, LiON, TiOx, TiON, TaOx, TaON, TaNx, C, etc.

S 36 201212322. Various oxides, nitrides, oxynitrides. Among these compounds, in terms of improving heat dissipation, the best one is

LiF, Li20, MgF2, CaF2, NaF, SiO. The method of forming the adhesion improving layer containing the above inorganic compound layer is not particularly limited, and known methods such as a vapor deposition method, a spin coating method, a prayer method, an LB method, and the like can be applied. The thickness of the above inorganic compound layer is not particularly limited and may be appropriately selected depending on the purpose, and is preferably 0, 1 nm to 100 nm, more preferably 〇 3 nm to 1 〇 nm. In the organic electroluminescent device of the present invention, the above limitation may be appropriately selected depending on the purpose, for example, an electron injecting layer, a gamma layer, a hole transporting layer, an electron blocking layer, and the like. -Electronic injection layer -

The function of the electron injecting layer is to acquire electrons from the cathode or cathode side to the sacred scorpion. J The above-mentioned electronic injection layer may be a single shoulder containing the material of (4) '4 or may be a thickness of the township multi-layer structure containing the same group of different cities than the thickness of the layer, and may be appropriately selected according to the purpose, = 〇. =〇〇魏' is better for 〇2~ 细细,尤佳为〇5~5〇卿 with injection layer, hole transport layer _ side acquisition = pass =:=== anode can be single-family M f The multilayer structure of the human layer and the hole transport layer. For the same city or different layers of different layers, the hole injection material or hole transmission material can be low.

S 37 201212322 Molecular compound, which may also be a polymer compound. The above-mentioned hole injecting material or hole transporting material is not particularly limited and may be appropriately selected depending on the purpose, for example, a scale derivative, a material derivative, or a triterpenoid derivative. Cacao derivative, chew derivative, sodium saliva derivative alkane, biological, pyrazoline derivative, pyrazolone derivative, phenylenediamine derivative, arylamine derivative, substituted by amine group Charle = street creature, _ projectile, knee derivative, diphenyl (tetra) derivative = return, aromatic tertiary amine compound, stupid vinylamine compound,: aromatic one base compound, phthalocyanine compound &quot ; Bu Lin is a combination of independent, organic derivative, carbon and so on. These materials may be used singly or in combination of two or more. The hole injection layer and the hole transport layer may contain an electron accepting dopant. The above-mentioned electron-accepting dopant may be used as long as it is an electron-accepting property of oxidizing a compound, and an organic compound may be used. Using inorganic compounds, you can also use

The Si" compound is not particularly limited and may be appropriately selected depending on the purpose, for example, gallium hydride, indium chloride, pentachloride, etc., such as a metalized metal, a five-oxygen shirt, a trioxane, and the like. The ti is not particularly limited, and may be appropriately selected according to the purpose, and examples include a compound having a substituent such as a group or a trifluorof group, a rich material (hemp), and the like. These compounds may be used alone or in combination. There is no particular limitation on the amount of the metal-based Iff raw material, and it is preferable to use the material σ 八目 ί in the hole transport layer material or the hole injection material.

S 38 201212322 ·

It is 0 01 50 Wt%, more preferably 0.05~30 wt%, especially good A knows the method ^ / ^ *The runner layer has no special difficulty, and can be formed by using the method of vaporization. For example, the vapor deposition method JT can be utilized. Wet coating method t dry plating method such as dry film forming method, 4 words cloth removal, transfer method, printing method = film method, the above-mentioned hole injection exhibition; "Μ, 垦 式 4, and appropriately formed. Preferably, the thickness of the transport layer is preferably a thickness of 10 to 200, and the electrical function is to prevent the organic layer from being transported from the cathode side to the light-emitting layer. As the compound which transports the electric charge and supports, for example, a compound exemplified as the above-mentioned hole transport material can be used. Further, a single layer of one or two or more kinds of materials is obtained, and a multilayered layer of two or more layers of the above composition or different compositions is obtained. 3 The same composition of the above-mentioned electron blocking layer is not particularly limited 'can be formed by a known method, for example, dry film forming method such as vapor deposition method or sputtering method, wet coating method, transfer method, printing method, or ink jet method And formed appropriately. The thickness of the above electron blocking layer is preferably a urethane, more preferably U nm ' is preferably 3 to 10 nm. <Substrate> The organic electroluminescent device of the present invention is preferably provided on a substrate, and may be provided in such a manner that the electrode is in direct contact with the substrate, or may be inserted in a ten-layer arrangement. The material of the above substrate is not particularly limited and may be appropriately selected according to the purpose, such as oxygen, yttrium stabilized yttrium oxide (ysz), glass (alkali-free glass, nano-calcium glass, etc.) and other inorganic materials; poly-p-benzoquinone Polyesters such as acid bis vinegar, poly(p-dibenzoic acid I monoester), polyethylene naphthalate, etc.; polystyrene, polycarbonate, *fang|"'s brewed imine, polycyclic hydrocarbon, lower Organic materials such as borneol resin and ♦ (chlorodifluoroethylene). The shape, structure, and size of the above-mentioned substrate are not particularly limited, and may be appropriately selected depending on the shape, purpose, and the like of the two pieces. Generally, the shape of the substrate is better, f, the structure of the plate may be a single layer structure 'may also be a laminated structure; the other 'can be formed by a single member, or two can be transparent with =" can also be opaque; transparent In the case of the second f transparent, it can also be colored and transparent. ., , 'The surface of the base plate or the back surface may be provided with a moisture barrier layer (gas barrier layer). Oxidation (gas barrier layer) materials such as: gas ', etc. 2 moisture barrier layer (gas barrier layer), for example, can be used by high-frequency sputtering method • other components - into a special system, can be appropriate according to the purpose , for example, German, sealer, resin sealing layer, sealing adhesive, etc. The protective layer, the sealed container, and the resin sealing layer are not particularly limited, and may be appropriately selected according to the purpose, and may be, for example, a matter described in the following paragraphs such as the Japanese Patent Publication No. 2_-152572. ~ The organic electroluminescent device of the present invention can obtain luminescence by applying a direct current (which may contain an alternating current component) voltage (usually 2 volts to 15 volts) or a direct current between the anode and the cathode 201212322. The organic electroluminescent device of the present invention can be applied to an active matrix by a thin film transistor (TFT). The active layer of the Lai crystal can be used in the case of Cica, the temperature of the polycrystalline stone, the low temperature polycrystalline stone, the microcrystalline stone, the oxide semiconductor organic semiconductor, the carbon nanotube. The organic electroluminescent device of the present invention can be applied, for example, to a film transistor described in International Publication No. 2005/088726, Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. In the present invention, the organic electroluminescent device is not particularly limited, and the rate of grading can be improved by various known methods. For example, by adjusting the surface shape of the substrate (for example, forming a fine concavo-convex pattern), the substrate, the layer, the refractive index of the organic reed, the thickness of the control substrate, the ITO layer, and the organic layer can be controlled to improve the light extraction efficiency. Increase external quantum efficiency.

The light-collecting method of the organic electroluminescent device of the present invention may be a top emission method or a bottom emission method. X The organic electroluminescent device of the present invention may have a resonator structure. For example, 'the first secret' overlaps on a transparent substrate and has a multilayer film mirror including a plurality of laminated films having the same refractive index, a transparent or semi-transparent electrode, a light-emitting element, and a metal electrode. The light generated by the illuminating shot is the mirror surface of the shirt (4), and the electrode is a reflecting plate, which is reflected and reciprocated repeatedly. In the second aspect, on the transparent substrate, the transparent or semi-transparent electrode electrodes respectively act as the reflectors, and the light generated in the light-emitting layer is reflected and reciprocated repeatedly in &amp; 201212322. In order to form the co-sewn structure, the light of the two reflection-fuzzy refractive index, the two-plate-by-layer vitrification rate, and the thickness of the mosquitoes are most suitable for obtaining the value of the desired resonance wavelength. The calculation formula for the case of the above-described first aspect is described in Japanese Patent Publication No. 9-180883. In the case of the above-described second aspect, the calculation formula is disclosed in Japanese Laid-Open Patent Publication No. 2004-127795. The organic electroluminescent device of the present invention is not particularly limited, and may be selected for display elements, displays, and Backlights, electronic photos, Zhaomingqiao, recording light sources, exposure light sources, reading light sources, signs, billboards, interior materials, optical communications, etc. The above-mentioned organic electroluminescent display is made into a full-color display = as known below: if the "Monthly Display" 2nd September issue 3W page is loaded, the three primary colors corresponding to the color (blue (8), a three-color light method in which a green-red (R) light organic electroluminescence element is disposed on a substrate; and a white light method in which three-primary colors are separated by a white light-emitting color light-emitting sheet of a color-developing organic electroluminescence element; The color conversion method in which the blue light emission of the organic light-emitting element for light-emitting illumination is passed through the fluorescent pigment layer to be red (R) and green (G). [Examples] Examples of the invention are described below, but the invention is not limited thereto. In the following examples, the average thickness of the first and second electron transport layers is utilized.

S 42 201212322 · The stylus type surface shape measuring device measures the average thick sound of the average value obtained at three places. (Comparative Example A1) To be again. - Fabrication of Organic Electroluminescence Element - On a glass substrate having a thickness of 0.5 mm and 2.5 cm square, IT 〇 was set as an anode so as to have a thickness of 70 nm by sputtering. Next, the glass substrate with ruthenium was placed in a cleaning container, and subjected to sonic cleaning in 2-propanol, followed by ultraviolet-ozone treatment for 30 minutes. Ding. Next, on the glass substrate, the following structure of 2-(4,4',4&quot;_tris(2-naphthylphenylamino)triphenylamine) is shown in the following structural formula. Table _ as fine (2) 卩 from tons of bismuth (F4TCNQ) 'Using vacuum distillation method to form thickness 45 her hole injection layer (HIL). €

2-TNATA

NC, /CN

NC person CN F4-TCN0 Next, the hole transmission layer (HT1) is formed by plating the NPD ′ represented by the following structural formula on the hole injection layer so as to have a thickness of 1〇11111: 43 201212322

Q

NPD Next, on the hole transport layer, a compound X-1 represented by the following structural formula and a compound D-1 represented by the following structural formula are formed as a light-emitting layer. Specifically, the compound D-1 to be a light-emitting material and the compound H-1 to be a main component are provided in different vapor deposition sources of the vapor deposition device. Next, the two plates were heated, and the opening and closing of the baffle on the side where the compound D-1 was provided was appropriately switched, and two layers of the light-emitting material doping layer and the two layers of the light-emitting material undoped layer were laminated. That is, the first luminescent material non-doped layer, the first luminescent material doped layer, the second luminescent material undoped layer, and the second luminescent material doped layer are sequentially stacked from the anode side. In the meantime, the thickness of the doped layer of the two layers of the luminescent material is adjusted to be 7 5 nm &amp; the thickness of the undoped layer of the two layers of the luminescent material is divided into 7.5 nm by the time setting of opening and closing of the baffle. The overall thickness of the luminescent layer is 3 〇 nm. Become a hair

Η-1 Next, steamed on the luminescent layer in such a manner that the average thickness became 35 nm.

S 44 201212322 Plating the compound Ε·1 represented by the following structural formula,

The electron transfer layer is formed. Next, an adhesion improving layer was formed on the electron transporting layer with a bond SiO having a thickness of i 。. Then, a patterned mask (a mask having a light-emitting area of 2 mm x 2 mm) was placed on the adhesion improving layer, and IS (A1) was vaporized so as to have a thickness of 7 〇 nm to form a cathode. , '

The laminated body made of the above formula is placed in an argon-filled glove box, and is made of a stainless steel sealed can, a desiccant (HD-S-071205-40, manufactured by Dynic), and an ultraviolet curing adhesive (XNR55 i 6HV). The Nagase Ciba a system was used to seal the organic electroluminescent device of Comparative Example A1. (Comparative Example A2) - Preparation of Organic Electroluminescence Element - The comparison with the comparative example A/ except that the electron transport layer of Comparative Example A1 was replaced with the first electron transport layer and the second electron transport layer produced in the following manner. In the same manner, the organic electroluminescent device of Comparative Example A2 was produced. • Preparation of the first electron transporting layer and the second electron transporting layer _ The compound E·1 represented by the above structural formula was vapor-deposited so that the average thickness became l〇nm, and the first electron transporting layer was formed. Then, on the first electrotransport layer, '0.6 Wt/〇 in the above-mentioned structural formula compound is converted into a reductive dopant, and the average thickness is 25 nm, and (4) into a second electron. Transport layer. 45 201212322 (Comparative Example A3) - Preparation of organic electroluminescence device - The same as in Example A1 except that the electron transport material in Comparative Example A1 was replaced by the first electron transport layer and the second electron transport layer produced as follows. In the manner of producing the organic electroluminescence element 2 of Comparative Example A3, the preparation of the -electron transport layer and the second electron heterolayer, the average thickness; &amp; Electricity (4) The table is not X Le thousand transmission layer. Then on the first electron transport layer 'in the compound W of the upper frequency configuration

Wt% was discharged as a reducing dopant, and vapor deposition was carried out with a square gas having an average thickness of 25 n: to form a second electron transport layer. Formula (Comparative Example A4) Preparation of θ-Organic Electroluminescent Device _ In addition to replacing the electron transport layer in Comparative Example A1 with the first electron transport layer and the second electron transport layer produced in the following manner, and * formation The organic electroluminescent device of Comparative Example A4 was used in the same manner as in the case of the Si (the fourth aspect) A1 of the adhesion improving layer. - Fabrication of First Electron Transport Layer and Second Electron Transport Layer _ The compound E-1 represented by the above structural formula is vaporized so that the average thickness becomes l 〇 nm to form a first electron transport layer. Then, on the first electron transport layer, the compound Eq represented by the above structural formula is doped with 〇3 wt% and G.4 wt°/〇 potassium as a doping dopant to have an average thickness of 25 nm. The evaporation is performed in a manner to form a second electron transport layer. (Comparative Example A5)

S 46 201212322 Ll. Manufacture of organic electroluminescence device _ In addition to the luminescence of the sputum Μ, the luminescent layer of the compound di of the above-mentioned structural formula, which is doped with IS wt% of the compound Η·1 towel represented by the above structural formula (Thickness: 30 nm) 'S The electron transport layer # was replaced by the first electron transport layer and the second electron transport layer produced in the following manner, and the organic electroluminescence of the comparative example was produced in the same manner as in Comparative Example A14. - Preparation of the first electron transport layer and the second electron transport layer - The compound E-1 represented by the above structural formula is vapor-deposited so as to have an average thickness of 10 nm to form a first electron transport layer. On the electron transport layer, 'the compound Ε_ι represented by the above structural formula is doped with 〇3 wt〇/. of lithium and 0.44 wt% of potassium as a reducing dopant, and the average thickness/degree is 25 nm. The vapor deposition was carried out to form a second electron transport layer. Next, the average thickness of the first electron transport layer and the flatness of the second electron transport layer in Comparative Example A1 were shown in the following Comparative Example A6. And examples A1 to A7. (Comparative Example A6) Organic Preparation of Electroluminescence Element _ The organic electroluminescence element of Comparative Example A6 was produced in the same manner as in the case of the age-free A1 except that the electron transport layer in Comparative Example A1 was replaced by the electron transport layer produced in the following manner. - Preparation of Electron Transport Layer - In the compound E-1 represented by the above structural formula, 〇3 wt% of U and 0.4 wt% of potassium are doped as reducing dopants, and the average thickness is % by mail. Forming an electron transport layer. 47 201212322 (Example Al) - Fabrication of an organic electroluminescent device - except that the electron transport layer of the shed Ai towel was replaced by the first electron transport layer and the second electron transport layer fabricated in the following manner An organic electroluminescent device of the example gossip was produced in the same manner as in Comparative Example A1. - Fabrication of the first electron transport layer and the second electron transport layer - vapor deposition of the above structural formula in such a manner that the average thickness was 2 nm After forming the first electron transporting layer 1 on the first electron transporting layer, a compound of the formula E is used to push a ruthenium of 3 wt% of G.4 Wt% of potassium in the compound E] Riding the original dopants to average The second electron transport layer was formed by vapor deposition in a manner of 33 nm. (Example A2) - Fabrication of Organic Electroluminescent Device - Except that the electron transporting material of Comparative Example A1 was replaced by the first electron produced by In addition to the transport layer and the second electron transport layer, the money electroluminescent element of Example A2 was produced in the same manner as the two examples of Ai 4. The fabrication of the first electron transport layer and the third electron transport layer was performed with an average thickness. A method of 4 mn is used to examine the compound E of the above structural formula to form an electron transport layer. Then, on the first sub-transport layer, a chirped time and 0.4 Wt% in the compound represented by the above structural formula are obtained. Potassium as a reducing dopant, the average thick sound, 3 31 mn way to form Wei, and the formation of the second electron transport layer / become (example A3) - the production of organic electroluminescent elements _ 48 201212322,』 The electron transport layer in the middle is replaced by the following example eight! Phase_mode, system 3 3 + transport layer ^, compare + 3 organic electroluminescent elements. The production of the second f=electron transport layer _ L·1 is again 7 nm to vapor-deposit the wt expressed by the above structural formula. The compound represented by the G4^ structural formula is doped with 0.3 wt/〇 of the clock and G·4 wt/. The potassium is carried out in a 28 nm manner. #心掺贝 becomes a thousandth degree (Example M). • Production of an organic electroluminescence device, except that the electron transport layer of the first electron-transport layer 2 produced in Comparative Example A1 was replaced by the same method as in the following example Ai 4, in addition to the electron transport layer, -Electronic listening to the first _ electromechanical excitation. The sub-carrier layer is deposited on the sub-transport layer represented by the above structural formula by the compound E_h (four) of the production of the average 戽m transport layer. The second electron-transporting layer was formed by doping (Example A5) in the compound E·1 of the first electroacoustic and G.4 wt%. - Fabrication of Organic Electroluminescence Element The sub-transport layer was replaced by the first electron-transport layer and the second in addition to the electron-transport layer in the following manner except for the electron transport layer in Comparative Example A1.

S 49 201212322 · Example phase _ mode 'Production of organic electroluminescent element β of Example A5 - Preparation of first electron transport layer and second electron transport layer _ Compound E-1 forms a first electron transport layer. Then, on the first electron transport layer, 'the compound E1 represented by the above structural formula is doped with Ο% of lithium and 0.4% by weight of potassium as a reducing dopant, and the average thickness is 22 nm. Plating to form a second electron transport layer. (Example A6) - Preparation of Organic Electroluminescence Element - The same manner as in Comparative Example A1 except that the electron transport material of Comparative Example A1 + was substituted into the first electron transport layer and the second electron transport layer produced by the method , the organic electroluminescent element from which the example was made. Production of First Electron Transport Layer and Second Electron Transport Layer _ The compound E-1 represented by the above structural formula was vapor-deposited so as to have an average thickness of 16 nm to form a first electron transport layer. Then, on the first electron transport layer, 'the compound represented by the above structural formula is doped with 〇3 wt% of lithium and 0.4 wt% of potassium as a reducing dopant, and the average thickness is 19 nm. And forming a second electron transport layer. (Example A7) - Preparation of Organic Electroluminescence Element - The same as Comparative Example A1 except that the electron transport layer in Comparative Example A1 was replaced with the first electron transport layer and the second electron transport layer which were produced in the following manner. In the manner, an organic electroluminescent element of Example a? was produced. - Fabrication of First Electron Transport Layer and Second Electron Transport Layer - 50 201212322. The vaporization of the above structural formula is carried out so that the average thickness becomes 20 nm. The object E]' (4) is the first electron transport layer. Then, on the first electron transporting layer, the compound ei, which is represented by the above-mentioned composition, and the wt% of the bell and 0.4 Wt% of potassium are used as the reductive doping f, and the thickness is 15 nm. A second electron transport layer is formed. (Comparative Example B1) - Preparation of Organic Electroluminescence Element - The average thickness of the electron transport layer was changed to 4 〇 nm, and the thickness was changed, except that the luminescent layer in Comparative Example A1 was replaced with the luminescent layer produced in the following manner. An organic electroluminescent device of Comparative Example B was produced in the same manner as in Comparative Example A1 except that MgF 2 was deposited as a adhesion improving layer in a lnm manner. In the production of the light-emitting layer, a light-emitting layer in which the compound D-1 represented by the above structural formula is a main component and the compound D_2 represented by the following structural formula is a light-emitting material is formed on the hole transport layer. Specifically, the compound D-2 to be a light-emitting material and the compound H-1 to be a main component are provided in different vapor deposition sources of the vapor deposition device. Next, the evaporating dish of both was heated, and the opening and closing of the baffle provided on the side of the compound D-2 was appropriately switched to laminate two layers of the luminescent material doping layer and the two luminescent material non-doped layers. That is, the first luminescent material undoped layer, the first luminescent material doped layer, the second luminescent material undoped layer, and the second luminescent material doped layer are sequentially laminated from the anode side. In the meantime, the thickness of the doped layer of the two layers of luminescent materials is adjusted to 7.5 nm and the two layers of luminescent materials are undoped by the time setting of opening and closing of the baffle 51 5 201212322

The thickness of the layer is divided into 7.5 nm. The overall thickness of the luminescent layer is 3 〇 nrn. The concentration of the compound D-2 which becomes a luminescent material in the doping layer of the luminescent material is 3 Å to 〇. D-2 (Comparative Example B2) - Preparation of Organic Electroluminescence Element - j except that the electron transport layer in Comparative Example B1 was replaced with the first electron transport layer and the second electron transport layer which were produced in the following manner, In the same manner as in Comparative Example B1, the organic electroluminescent device of Comparative Example 62 was produced. - Fabrication of First Electron Transport Layer and Second Electron Transport Layer - Compound E-1 represented by the above structural formula was vapor-deposited so that the average thickness became l 〇 nm to form a first electron transport layer. Then, on the first electron transport layer, 'the compound Ed represented by the above structural formula is doped with 0.6 Wt% of lithium as a reducing dopant, and the average thickness is 30 nm, and the second electron is formed. Transport layer. (Comparative Example B3) - Preparation of Organic Electroluminescence Element - The same as Comparative Example B1 except that the electron transport layer in Comparative Example B1 was replaced with the first electron transport layer and the second electron transport layer which were produced in the following manner. In the manner of the organic electroluminescent device of Comparative Example B3. - Preparation of First Electron Transport Layer and Second Electron Transport Layer - The compound E-1' represented by the above structural formula was vapor-deposited so as to have an average thickness of 10 nm to form a first electron transport layer. Then at the first electricity

S 52 201212322 On the sub-transport layer, the above-mentioned structural formula is unloaded as a reductive medium (4). 8 is steamed, and (iv) is formed into a second electron-transport layer thickness 4 of 3G (10) (Comparative Example B4) θ • Organic electricity Production of Excitation Light Element - Except for the electron transport layer in Comparative Example 1, an electron transport layer and a second electron transport layer, other than MgF2, which is the same as Comparative Example &amp; Organic electroluminescent elements. Production of the -electron-transporting layer and the second electron-transporting layer _ The electron-transfer was formed by the compound E·1 of the above structural formula in an average thickness of (7) Cong. Then, on the first electron transport layer, '3 wt% of lithium and 0.4 wt% of potassium in the compound W represented by the upper structure are used as a reducing dopant, and the average thickness is 30 mn. Evaporation forms a second electron transport layer. Further, the preparation of the organic electroluminescence device was carried out except that the light-emitting layer of Comparative Example B1 was changed to the above-mentioned structural formula by doping 15 wt% of the compound H-1 represented by the above structural formula. Comparative Example B5 was produced in the same manner as Comparative Example B1 except that the light-emitting layer (thickness: 30 nm) of the compound d_2 was replaced with the first electron-transporting layer and the second electron-transporting layer which were produced in the following manner. Organic electroluminescence element - fabrication of first electron transport layer and second electron transport layer · vapor deposition of the above structural formula so that the average thickness is 10 nm

Compound 53 of S 53 201212322, and after forming the first electron transport layer 1 on the sub transport layer, 'in the compound E l represented by the above structural formula, (eight) wt% of the bell A 0.4 Wt% of potassium as a reducing property The dopant was subjected to steaming in an average/30 nm manner to form a second electron transport layer. Further, in the comparative example B1, the average thickness of the first electron-transporting layer in the first electron-transporting layer and the second electron-transporting layer in the comparative example B1 were changed to the following examples and examples Β1 to Β7. (Comparative Example 6) - Preparation of Organic Electroluminescence Element - Comparative Example B6 was prepared in the same manner as in Example B1 except that the electron transport layer in Comparative Example m was replaced by the electron transport layer produced in the following manner. Organic electroluminescent elements. - Preparation of electron-transporting layer - In the compound E_i represented by the above structural formula, lithium and 0.4 w|% of the material-bonding doping f are mixed, and the steaming is performed so that the average thickness becomes 4 〇 legs. Formation of an electron transport layer (Example B1) - Fabrication of an organic electroluminescence device - Except that the electron transport layer in Comparative Example B1 was replaced with the first electron transport layer and the second electron transport layer produced in the following manner, An organic electroluminescent device of Example m was produced in the same manner as in Comparative Example B1. - Preparation of the first electron transporting layer and the second electron transporting layer, the compound Ε·1 represented by the above structural formula was vapor-deposited with a material having an average thickness of 2 nm to form a first electron transporting layer. Then at the first electricity

S 54

On the F-transport layer of 201212322, the compound E_1 represented by the above structural formula is doped with 〇3 wt% of the clock and (Μ wt% of potassium is used as the reductive doping f, and the average thickness is 38 nm. The second electron transport layer was formed. (Example B2) - Fabrication of Organic Electroluminescence Element - Except that the electron transport material of Comparative Example B1 was replaced by the first electron transport layer and the second electron body layer produced as follows The organic electroluminescent device of Example B2 was fabricated in the same manner as in Example B1. 'Production of the -electron transport layer and the second electron transport layer_The above structural formula was distilled in such a manner that the average thickness became 4 nm. Forming a first electron transport layer. Then, on the first electron transport layer, the compound W in the above-mentioned structure is wiped with a wt% of the clock and Μ wt%_ as a reduction (10)f, free of 36 thieves. Progression, (4) into the second electron transport layer (Example B3) - Fabrication of the organic electroluminescent device - Except that the electron transport layer in Comparative Example B1 was substituted for the A: the electron transport layer and the second electricity V: Two formulas and: as: Example m of organic electroluminescent elements. The production of the electronic transmission layer and the second electron transport layer of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _

S 55 201212322, 33 mn is vapor-deposited to form a second electron transport layer. (Example B4) - Fabrication of Organic Electroluminescence Element - The second electron transfer layer in Comparative Example B1 was replaced by the same method as the t-th sub-transport layer and the second electron-transport layer r1. Organic (10) organic electrode element. The first electron transport layer and the second electron transport layer were formed by vapor deposition of the above structural formula to form a first electron transport layer. Then, on the first electron-transporting layer, 'in the compound w represented by the above structural formula, 〇3 wt% and G.4 wt%_ are used as the reductive doping f, and the average thickness is 30 nm. Evaporation forms a second electron transport layer. (Example B5) - Preparation of Organic Electroluminescence Element - The same as Comparative Example B1 except that the electron transport layer of Comparative Example B1 was replaced by the first electron transport layer and the second electron transport layer produced in the following manner. Method 'The organic electroluminescent element of Example B5 was fabricated. - Fabrication of the first electron transporting layer and the second electron transporting layer - The first electron transporting layer was formed by the compound E-1 represented by the square wire structure of the average thickness of the wire n nm. Then, on the first electron transport layer, 'the compound E-1 represented by the above structural formula is doped with 〇3 wt% of lithium and 0.4 wt% of potassium as a reducing dopant' in such a manner that the average thickness becomes 27 nm. Evaporation is performed to form a second electron transport layer. (Example B6)

S 56 201212322 Preparation of organic electroluminescent element _ In addition to replacing the electron transport layer in Comparative Example m with the first-electron transfer layer two electron transfer material prepared as follows, an example of making a disc ratio m phase_method B6's money f excites the light element. - Preparation of the first electron transporting layer and the second electron transporting layer - The first electron transporting layer was formed by a compound E-b represented by a structural formula in a technique having an average thickness of 16 nm. Then, on the first-thunder transport layer, the compound E1 towel of _Li4 knot-making county* is used to reduce the wt% minus 0.44 Wt% clock as a reducing quality, and steaming in the form of a flat rabbit 24 coffee. Mine, forming a second electron transport layer. (Example B7) - Preparation of Organic Electroluminescent Device - In addition to replacing the electron transport layer in Comparative Example B1 with the first-electron hybrid layer and the second electron transport layer produced in the following manner, the ratio is the same as in Example m The method of making the organic electroluminescent element of Example Β7. - Fabrication of the first electron transporting layer and the second electron transporting layer - The first electron transporting layer was formed by examining the compound E-b of the above structural formula in such a manner that the average thickness became 2 G nm. Then, on the first electron transport layer, the compound E_〗 represented by the above structural formula is doped with 〇3 wt% of lithium and 0.4 wt% of potassium as a reducing dopant, and the average thickness &gt; degree becomes 20 mn. The vapor deposition is performed to form a second electron transport layer. Further (Comparative Example C1) - Preparation of Organic Electroluminescence Element - The average thickness of the electron transport layer was changed to 50 nm, except that the light-emitting layer of Comparative Example A1 + was replaced by the 57 201212322 light-emitting layer produced in the following manner. An organic electroluminescent device of Comparative Example C1 was produced in the same manner as in Comparative Example A1 except that the vapor-deposited lens LizO having a thickness of 1 nm was used as the adhesion improving layer. In the production of the light-emitting layer, the compound H-2 represented by the following structural formula is mainly formed on the hole transport layer, and the compound D-3 represented by the following structural formula is a light-emitting layer of a light-emitting material. Specifically, the compound D-3 to be a light-emitting material and the compound H-2 to be a main component are provided in different vapor deposition sources of the vapor deposition device. Next, the evaporation suits of the two were heated and the opening and closing of the baffle provided on the side of the compound D-3 was appropriately switched to laminate two layers of the light-emitting material doping layer and the two layers of the light-emitting material non-doped layer. That is, the first luminescent material undoped layer, the first luminescent material doped layer, the second luminescent material undoped layer, and the second luminescent material mixed layer are sequentially laminated from the anode side. In the meantime, the thickness of the doped layer of the two layers of the luminescent material was adjusted to 7.5 nm by the time setting of the opening and closing of the baffle, and the thickness of the undoped layer of the two layers of the luminescent material was 7.5 nm. The overall thickness of the luminescent layer is 30 nm. The concentration of Compound D-3 which became a luminescent material in the doping layer of the luminescent material was 1 wt%.

(Comparative Example C2) - Fabrication of Organic Electroluminescent Device - In addition to replacing the electron transport layer in Comparative Example C1 in the following manner

S 58 201212322. An organic electroluminescent device of Comparative Example C2 was produced in the same manner as in Comparative Example ci except for the produced first electron transport layer and second electron transport layer. Production of Ί1 sub-transport layer and second electron-transport layer _ The ytterbium material E-1 represented by the above structural formula was vapor-deposited so as to have an average thickness of 10 nm to form a first electron-transport layer. Then, on the first electron transport layer, the compound 匕1 represented by the above structural formula is doped with 〇 6

Wt% = lithium as a reducing dopant, and vapor deposition was carried out in such a manner that the average thickness became 40 nm, and a second electron transport layer was formed. (Comparative Example C3) - Preparation of Organic Electroluminescence Element - The same as Comparative Example C1 except that the electron transport layer in Comparative Example C1 was replaced with the first electron transport layer and the second electron transport layer produced in the following manner. In the manner of the organic electroluminescent device of Comparative Example C3. - Preparation of First Electron Transport Layer and Second Electron Transport Layer _ The compound E-1 represented by the above structural formula was vapor-deposited so as to have an average thickness of 10 nm to form a first electron transport layer. Then, on the first electron-transporting layer, the compound E-1 represented by the above structural formula is doped with 1 wt% of ruthenium as a reducing dopant, and vapor-deposited so as to have an average thickness of 4 〇 nm. Second electron transport layer. (Comparative Example C4) - Fabrication of Organic Electroluminescent Device - The electron transporting layer in Comparative Example C1 was replaced with the first electron transporting layer and the second electron transporting layer produced in the following manner, and was not formed as an adhesion improving layer. In the same manner as in Comparative Example C1, 59 201212322 was used as the organic electroluminescent device of Comparative Example C4, except for LhO. • Production of First Electron Transport Layer and Second Electron Transport Layer _ The compound E-1 represented by the above structural formula was vapor-deposited so as to have an average thickness of 10 nm to form a first electron transport layer. Then, on the first sub-transport layer, the compound E-1 represented by the above structural formula is doped with 〇3 wt% of lithium and 0.5 wt% of planer as a reducing dopant, and the average thickness is 40 nm. Evaporation forms a second electron transport layer. (Comparative Example C5) Preparation of θ-Organic Electroluminescent Device - In addition to changing the luminescent layer of Comparative Example C1 to 0.5% by weight of the compound represented by the above structural formula in the compound Η-2 represented by the above structural formula The light-emitting layer (thickness: 3 Gnm) was replaced with the electron-transport layer as the first-electron transport layer and the second electron-transport layer produced in the following manner. In the same manner as in the fish comparative example (1), the comparative example C5 was produced. Electromechanical excitation of optical components. - Production of the first-electron transport layer and the second electron transport layer _ The average thickness becomes the E1 '(4) filament-electron transport layer represented by the lGnm. In the first electric rain, the compound W represented by the above structural formula is mixed: /. = 0.5 wt% of 铯 as a reduction test, Naxian 4 sub-transport layer. - Fabrication of Organic Electroluminescence Element - Except that the electron-transport layer j produced by the electron transport in Comparative Example C1 was replaced by the following method, the same as the method of comparing 201212322j, Cl An organic electroluminescent element of Example C was fabricated. - Preparation of First Electron Transport Layer and Second Electron Transport Layer _ The compound E-1 represented by the above structural formula was vapor-deposited so as to have an average thickness of 10 nm to form a first electron transport layer. Then, on the first electron transport layer, 匕丨3 wt% of lithium and 0.5 wt% of planer are doped as a reducing dopant in the compound yttrium represented by the above structural formula, and the average thickness is 40 nm. Evaporation forms a second electron transport layer. (Comparative Example D1) - Preparation of Organic Electroluminescence Element - An organic battery of Comparative Example D1 was produced in the same manner as in Comparative Example A1 except that the light-emitting layer in Comparative Example A1 was replaced with the light-emitting layer produced in the following manner. Excitation light element. In the production of the light-emitting layer, the compound D-3 represented by the following structural formula is mainly formed on the hole transport layer, and the compound D_3 represented by the above structural formula or the compound D-4 represented by the following structural formula is illuminated. The luminescent layer of the material. Specifically, the compound D-3 or D-4 which is a luminescent material and the compound H-3 which is a main component are provided in different vapor deposition sources of a vapor deposition apparatus. Then, the evaporating dish of both was heated, and the opening and closing of the baffle provided on the side of the compound D-3 or D-4 was appropriately switched to laminate two layers of the luminescent material doping layer and the two luminescent material undoped layers. That is, the first luminescent material undoped layer, the first luminescent material doped layer, the second luminescent material undoped layer, and the second luminescent material doped layer are sequentially laminated from the anode side. In the meantime, by the time setting of opening and closing of the baffle, it is adjusted to 2 201212322 ^ = the luminescence of the material layer is 10wt%.

-Manufacture of organic electroluminescent elements

The electron transport layer in the D-4 system is replaced by the electron-transport layer and the second electron transport layer produced in the following manner: 1) 2 - the second electric transport layer and the second electron transport layer The production_j sentence becomes the first wire of the lGnm, and the first electron-transporting layer is formed by the chemical composition represented by the above structural formula. Then, on the first electron-transporting layer, ruthenium 6 wt% of lithium is doped as a reducing dopant in the compound yttrium represented by the above structural formula, and vapor deposition is performed in such a manner that the average thickness becomes nm. Two electron transport layers. ^ (Comparative Example D3) - Preparation of Organic Electroluminescence Element - Except that the electron transport layer in Comparative Example D1 was replaced with the first electron transport layer and the second electron transport layer which were produced in the following manner, and Comparative Example D1 In the same manner, the organic electroluminescent device of Comparative Example D3 was produced. - fabrication of the first electron transport layer and the second electron transport layer -

S 62 201212322 The degree of vaporization of the clock is represented by the above structural formula. On the sub-transport layer, the first electric current is a reducing dopant, and the second electron-transport layer is formed. Fine method (Comparative Example D4) - Fabrication of organic electroluminescent device _ The electron transport layer of the D1 towel was replaced with the first electron transport layer and the second electron transport layer produced by the following: The same organic layer as the comparative example m was used as the organic electroluminescent element of Comparative Example D4 except for Sl. Production - Production of the -electron transport layer and the second electron transport layer _ The first electron transport was formed by the average thickness of the county 10 nm test ==. Then, the compound Ε-i represented by the above structural formula is doped with 〇 3 wt /. The clock and G.4 wt% of potassium are used as reducing dopants, and are vaporized in an average thick sound of 25 nm to form a second electron, and (Comparative Example D5) θ-organic electroluminescent element Production_ In addition to changing the light-emitting layer of Comparative Example m to the above-mentioned compound H-3, 5 wt% of the light-emitting layer (thickness: 30 nm) of the chemical formula represented by the above structural formula was doped, and the electron transport layer was The produced first electron transport layer and the second electron transport; == The organic electroluminescent device of the comparative example is produced in the same manner as in the case of the example D1. 5 63 201212322 - Production of the first electron transport layer and the second electron transport layer _ forming a first electron transporting layer by vapor-depositing the compound represented by the above structural formula with an average thickness of 1 Gnm. Then, on the first electron transporting layer, a compound towel is smashed in the upper county material. 3 wt% of bribe 0.4 Wt% of unloading as a reducing dopant, evaporation was carried out in such a way that the average thickness became 25 legs, and a second electron transport layer was formed. (Example D1) - Fabrication of organic electroluminescent element Replaced from the D1 &quot;Electronic Transport Layer to create (4)-Electronics In addition to the transport layer and the second electron transport layer, the photovoltaic element of the example m was fabricated in the same manner as the comparative D1. _ The fabrication of the first electronic hybrid layer and the second electron transport layer _ the average thickness became 1 Qnm The square wire is formed by the object E 1 ' to form the first electron transport layer. Then, on the first electrotransport layer, the compound E in the silk fabric is replaced by t%. Chain and G.4 Wt%_ as a reducing dopant, 3 plating was performed in such a manner that the average thickness became nm, and a second electron transport layer was formed. (Comparative Example E1) • Production of an organic electroluminescence device _ The luminescent layer in the scent example A1 is a luminescent layer produced in the following manner: the average thickness of the electron-transporting layer is changed to 50 mn, and the thickness of the lmn is vapor-deposited as the adhesion-improving layer, and ^ In the same manner as in Example A1, the fabrication of the organic electroluminescent element and the luminescent layer of the comparative example was made -

In the hole transport layer, a compound D-5 represented by the following structural formula and a compound D_5 represented by the following structural formula are formed as a light-emitting layer of a light-emitting material. Specifically, the compound D_5 which is a light-emitting material and the compound H-4 which is a main component are provided in different vapor deposition sources of the vapor deposition device. Next, the evaporating dish of both was heated, and the opening and closing of the baffle provided on the side of the compound D_5 was appropriately switched to laminate two layers of the luminescent material doping layer and the two luminescent material non-doped layers. That is, the first luminescent material doped layer, the first luminescent material undoped layer, the second luminescent material doped layer, and the second luminescent material undoped layer are sequentially stacked from the anode side. In the meantime, the thickness of the two-layer luminescent material doping layer is 7.5 mn and the thickness of the non-doped layer of the two luminescent materials is 7.5 nm by the time setting of opening and closing of the baffle. The overall thickness of the luminescent layer is 3 〇 legs. The concentration of the compound D_5 which becomes a luminescent material in the erbium-doped luminescent material was 1 (% by weight).

(Comparative Example E2) - Preparation of Organic Electroluminescence Element - Production I = The electron transport layer in Comparative Example E1 was replaced by the -f sub-transport layer and the second electron-transport layer produced in the following manner to In the same manner as in Comparative Example Ei, the organic electroluminescent device of Comparative Example E2 was produced. 65 5 201212322 -Preparation of the first electron transport layer and the second electron transport layer _ a method of vapor deposition on the sub-transport layer represented by the above structural formula, and performing steaming in the upper listening configuration to form a second electron beam The method of becoming a 4 〇 ( (Comparative Example E3) - Fabrication of an organic electroluminescent device _ The electron transport layer in the production == is replaced by the following - the production of the -electron transport layer and the second electron transport layer The average thickness becomes 1Gnm square wire plating (4) Guangcheng first electron transport layer. Then on the sub-transport layer, the compound Ε_ 1 represented by the above structural formula

Wt% is used as a reducing dopant, and is vapor-deposited with an average thickness of 40 nm to form a second electron transport layer. Method (Comparative Example E4) θ - Production of Organic Electroluminescence Element _

The electron transport layer in Comparative Example E1 was replaced with the first electron transport layer and the second electron transport layer produced below, and the MgFz other than the adhesion improving layer was the same as the comparative example m, and the second comparative example was used.有机4 organic electroluminescent element. I - The first electron transport layer and the second electron transport layer are produced - 66 201212322" The compound Ε·1 of the above structural formula is distilled in such a manner that the average thickness becomes l〇nm, and the first electron transfer wheel is formed. Floor. Then, on the first sub-transport layer, the compound towel represented by the above structural formula is subjected to a wt% of lithium and a 0.5 wt% planer as a reducing dopant, and the average thickness &gt; degree is 40 nm. Evaporation forms a second electron transport layer. Further, the preparation of the organic electroluminescence device was carried out except that the light-emitting layer of Comparative Example E1 was changed to the above-mentioned structural formula by doping 5 wt% of the compound H-4 represented by the above structural formula. A comparative example was produced in the same manner as in Comparative Example E1 except that the light-emitting layer (thickness: 3 Gnm) of the compound D 5 was shown and the electron-transporting layer was replaced with the first-electron transport layer and the second electron-transporting layer produced in the following manner. Organic electroluminescent element of E5. - Preparation of the first electron transporting layer and the second electron transporting layer - The first electron transporting layer was formed by examining the compound E-b represented by the above structural formula in such a manner that the average thickness became lGmn. Then, on the first electron transport layer, 'the compound E-1 represented by the above structural formula is doped with 〇3 wt% of lithium and 0.5 wt% of ruthenium as a reducing dopant to have an average thickness of 40 nm. The method is carried out by steaming to form a second electron transport layer.

(Example El) 'S - Preparation of Organic Electroluminescence Element - The same as Comparative Example E1 except that the electron transport layer of Comparative Example E1 was replaced with the first electron transport layer and the second electron transport layer which were produced in the following manner The way to make the organic electroluminescence element of the example E1 ^ cattle. -Development of an electronic transmission layer and a second electron transport layer_

67 S 201212322 The first electron transport layer was formed by riding the compound E_b represented by the above structural formula so that the average thickness became 1 G mn. Then, on the first electron transport layer, the compound in the upper (four)-extracted silk + 3 wt% of the cesium and 0.5 wt% of Wei are also used as the target, and the average thickness is 4 〇 nm. And forming a second electron transport layer. The layer structure of the electromechanical excitation light of the examples and the comparative examples is summarized in Tables 1 to 7 below, wherein () represents the thickness (継).

S 201212322 J-a06?irn [1_1 &lt;] Light-emitting layer (EML) Hl (7.5) /H-1+30%D-1 (7.5) /Hl (7.5) /H-1+30%D-1 ( 7.5) Hl (7.5) /HH-30%D-1 (7.5) /Hl (7.5) /H-1+30%D-1 (7.5) Hl (7.5) /H-1+30%D-1 ( 7.5) /Hl (7.5) /H-1+30%D-1 (7.5) Hl (7.5) /H-1+30%D-1 (7.5) /Hl (7.5) /H-1+30%D -1 (7.5) H-1 + 15%D-1 (30) Hl (7.5) /HH-30%D-1 (7.5) /Hl (7.5) /H-1+30%D-1 (7.5) Hole Transport Layer (HTL) NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) Hole Injection Layer (HIL) 2-TNATA+1%F4TCNQ (45) 2- TNATA+1%F4TCNQ (45) 2-TNATA+1%F4TCNQ (45) 2-TNATA+1%F4TCNQ (45) 2-TNATA+1%F4TCNQ (45) 2-TNATA+1%F4TCNQ (45) Anode ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) Comparative Example A1 Comparative Example A2 Comparative Example A3 Comparative Example A4 Comparative Example A5 Example A4 Bucket &lt;Ν·ι嵴】 Cathode A1 (70) A1(70) A1 (70) A1(70) A1 (70) A1 (70) adhesion improving layer (EIL) SiO (1) SiO (1) SiO ( 1 ) SiO ( 1 ) SiO ( 1 ) Two electron transport layer (ETL2) E-l+0.6%Li (25) E-1+0.8%K (25) E-1 + 0.3%Li + 0.4%K ( 25 ) E-1 + 0.3% Li + 0.4 %K ( 25 ) E-1 + 0.3%Li +0.4%K ( 25 ) First electron transport layer (ETL1) E-1 (35) E-1 (10) E-1 (10) E-1 (10) E-1 (10) E-1 (10) Comparative Example A1 Comparative Example A2 Comparative Example A3 Comparative Example A4 Comparative Example A5 Example A4 Douyi CS 啭 Light Emitting Layer (EML) H-1 (7.5) /H-1+30%D-1 (7.5) /Hl (7.5) /H-1+30%D-1 (7.5) Hl (7.5) /H-1+30%D-1 (7.5) /Hl (7.5) /H-1+30%D-1 (7.5 ) Hole Transport Layer (HTL) NPD (10) NPD (10) Hole Injection Layer (HIL) Scoop · 〇δ Η 2: + _ g CN 2-TNATA +1 %F4TCNQ ( 45 ) Anode | ITO (70) I ITO (70) | Comparative Example A6 I Example A1 69 5 201212322

Juoa Bu e Hl (7.5) /H-1 + 30%D-1 (7.5) /Hl (7.5) /H-1+30%D-1 (7.5) Hl (7.5) /H-1+30%D -1 (7.5) /Hl (7.5) /H-1+30%D-1 (7.5) Hl (7.5) /H-1+30%D-1 (7.5) /Hl (7.5) /H-1+ 30%D-1 (7.5) Hl (7.5) /H-1 + 30%D-1 (7.5) /Hl (7.5) /H-1 + 30%D-1 (7.5) Hl (7.5) /H- 1+30%D-1 (7.5) /Hl (7.5) /H-1 + 30%D-1 (7.5) Hl (7.5) /H-1+30%D-1 (7.5) /Hl (7.5) /H-1 + 30%D-1 (7.5) NPD (10) NPD (10) NPD (10) NPD (10) ! NPD (10) NPD (10) 2-TNATA+l%F4TCNQ (45) 2- TNATA+l%F4TCNQ (45) 2-TNATA+l%F4TCNQ (45) 1 2-TNATA+l%F4TCNQ (45) 2-TNATA+ 1%F4TCNQ (45) 2-TNATA+l%F4TCNQ (45) | ITO (70) | | ITO (70) I ITO (70) | ITO (70) ITO (70) ITO (70) Example A2 Example A3 Example A4 Example A5 Example A6 Example A7 [&lt;N_(N&lt;] Cathode A1 ( 70) A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) Ai (70) adhesion improving layer (EIL) SiO (1) SiO (1) SiO ( 1 ) SiO ( 1) SiO ( 1 ) SiO ( 1) SiO ( 1) SiO ( 1 ) Second electron transport layer (ETL2) . 1 El + 0.3% Li + 0.4% K (35) E-l + 0.3% Li + 0.4% K (33) E-1 + 0.3% Li + 0.4% K ( 31 ) E-1 + 0.3% Li + 0.4% K ( 28 ) El + 0.3% Li + 0.4% K (25) E-l + 0.3% Li + 0.4% K (22) El + 0.3% Li + 0.4% K ( 19) El + 0.3% Li + 0.4% K (15 ) An electron transport layer (ETL1) € El (2) El (4) El (7) El (10) El (13) El (16) 1 El (20) Comparative example A6 Example AI Example A2 Example A3 Example A4 Example A5 Example A6 Example A7 Luminescent Layer (EML) H-1 (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) /H-l+30%D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) /H-l+30%D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) /H-l+30%D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) /H-l+30%D-2 (7.5 ) Hl + 15%D-2 (30) Hole Transport Layer (HTL) NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) Hole Injection Layer (HIL) 2-TNATA+l %F4TCNQ (30)丨2-TNATA+l%F4TCNQ (30) j 2-TNATA+l%F4TCNQ (30) 2-TNATA+1%F4TCNQ (30) 2-TNATA+l%F4TCNQ (30) Anode ITO ( 70) ITO (70) ITO (70) ITO (70) ITO (70) | Comparative Example B1 | Comparative Example B2 Comparative Example B3 Comparative Example B4 Comparative Example B5 s 0 Bu 201212322 J-a06 &lt; N Bu e Hl (7.5) /Hl + 30%D-2 (7.5) /Hl (7.5) /H-l+30%D-2 (7.5) NPD (10) 2-TNATA+1%F4TCNQ (30) ITO (70) Example B4 3-e&lt;] Cathode A1 (70) A1(70) A1(70) A1 (70) A1 (70) A1 (70) Adhesion improvement layer (EIL) MgF2 (1) MgF2 (1) MgF2 (1) I MgF2 ( 1 ) MgF2 (1) Second electron transport layer (ETL2) El + 0.6% Li (30) E-1 + 0.8% K (30) E-l + 0.3% Li + 0.4% K (30) E-l + 0.3 %Li + 0.4%K (30) E-l+0.3%Li + 0.4%K (30) First electron transport layer (ETL1) E-1 (40) E-1 (10) E-1 (10) 1 E-1 (10) E-1 (10) E-1 (10) Comparative Example B1 Comparative Example B2 Comparative Example B3 Comparative Example B4 Comparative Example B5 Example B4 Light Emitting Layer (EML) H-1 (7.5) /H-l +30%D-2 (7.5) /Hl (7.5) /Hl + 30°/〇D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) / H-l+30%D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) /Hl + 30%D-2 (7.5) Hl (7.5) / H-l+30%D-2 (7.5) /Hl (7.5) /H-l+30%D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) /Hl ( 7.5) /H-l+30%D-2 (7.5) ! Hl (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) /Hl + 30%D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) /Hl (7.5) /Hl + 30%D-2 (7.5) Hl (7.5) /H-l+30%D-2 (7.5) / Hl (7.5) /Hl + 30%D-2 (7.5) Hole Transport Layer (HTL) NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) NPD (1) 0) NPD (10) 1 NPD (10) Hole injection layer (HIL) 2-TNATA+l%F4TCNQ (30) 2-TNATA+l%F4TCNQ (30) 2-TNATA+ 1%F4TCNQ ( 30) 2-TNATA +1 %F4TCNQ ( 30 ) 2-TNATA + 1%F4TCNQ (30) 2-TNATA+1 %F4TCNQ ( 30 ) 2-TNATA+1%F4TCNQ (30) 2-TNATA+1%F4TCNQ (30) Anode: ITO (70); ITO (70) | ! ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) | Comparative Example B6 | 1 Example B1 1 | Example B2 | Example B3 Example B4 instance B5 instance B6 instance B7

IL [3 inch inch d 5 201212322

Jui}6?Je Cathode A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) Adhesion improvement layer (EIL) MgF2 (1) MgF2 ( 1) MgF2 ( 1 ) ! MgF2 ( 1 ) MgF2 (1) MgF2 (1) MgF2 ( 1 ) MgF2 ( 1 ) Second electron transport layer (ETL2) E-1 + 0.3% Li + 0.4% K ( 40 ) E -l+0.3%Li+0.4%K (38) E-1 + 0.3%Li + 0.4%K ( 36 ) E-1 + 0.3%Li+0.4%K ( 33 ) El + 0.3%Li+0.4%K (30) 1 E-l+0.3%Li+0.4°/〇K (27) E-1 + 0.3%Li + 0.4%K ( 24 ) E-1 + 0.3%Li+0.4%K ( 20 ) First Electron Transport Layer (ETL1) E-1 (2) E-1 (4) E-1 (7) E-1 (10) E-1 (13) E-1 (16) E-1 (20) Comparative Example B6 Instance B1 Instance B2 Instance B3 Instance B4 Instance B5 Instance B6 Instance B7 [I-sd luminescent layer (EML) H-2 (7.5) /H-2+l%D-3 (7.5) /H-2 (7.5) /H-2+l%D-3 (7.5) H-2 (7.5) /H-2+l%D-3 (7.5) /H-2 (7.5) /H-2+l%D-3 ( 7.5) H-2 (7.5) /H-2+l%D-3 (7.5) /H-2 (7.5) /H-2+l%D-3 (7.5) H-2 (7.5) /H- 2+l%D-3 (7.5) /H-2 (7.5) /H-2+l%D-3 (7.5) H-2 + 0.5%D-3 (30) H-2 (7.5) /H -2+l%D-3 (7.5) /H-2 (7.5) /H-2+l%D-3 (7.5) HTL ! NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) Hole Injection Layer (HIL) 2 -TNATA+l%F4TCNQ (30) 2-TNATA+l%F4TCNQ (30) 2-TNATA+1%F4TCNQ (30) 2-TNATA+l%F4TCNQ (30) 2-TNATA+l%F4TCNQ (30) 2 -TNATA+l%F4TCNQ (30) Anode ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) Comparative Example Cl Comparative Example C2 Comparative Example C3 Comparative Example C4 Comparative Example C5 Example Cl 噼 珐匡 .. : Ί1Η* Dop Cathode A1 (70) A1 (70) A1 (70) Adhesion improvement layer Li2〇(1) Li2〇(1) Li20 (1) Second electron transport layer E-l+ 0.6% Li (40) El + l% Cs (40) First electron transport layer E-1 (50) E-1 (10) E-1 (10) Comparative Example C1 Comparative Example C2 Comparative Example C3

s ZL 201212322 JU06Z卜e A1 (70) A1 (70) A1 (70) Li2〇(1) Li2〇(1) E-l+0.3%Li + 0.5%Cs (40) E-l+0.3%Li+ 0.5% Cs (40) E-1 + 0.3% Li + 0.5% Cs (40) E-1 (10) E-1 (10) E-1 (10) Comparative Example C4 Comparative Example C5 Example Cl Bucket 1-9 ;] Light Emitting Layer (EML) H-3 (7.5) /H-3 + 10%D-3 (7.5) /H-3 (7.5) /H-3 + 10%D-4 (7.5) H-3 ( 7.5) /H-3 + 10%D-3 (7.5) /H-3 (7.5) /H-3 + 10%D-4 (7.5) H-3 (7.5) /H-3 + 10%D- 3 (7.5) /H-3 (7.5) /H-3 + 10%D-4 (7.5) H-3 (7.5) /H-3 + 10%D-3 (7.5) /H-3 (7.5) /H-3 + 10%D-4 (7.5) 1 H-3 + 5%D-4 (30) H-3 (7.5) /H-3 + 10%D-3 (7.5) /H-3 ( 7.5) /H-3 + 10%D-4 (7.5) HTL NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) NPD (10) Hole injection layer (HIL) 2-TNATA +l%F4TCNQ (45) 2-TNATA+l%F4TCNQ (45) 2-TNATA+l%F4TCNQ (45) 2-TNATA+l%F4TCNQ (45) 2-TNATA+l%F4TCNQ (45) 2-TNATA +l%F4TCNQ (45) Anode ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) ITO (70) Comparative Example D1 | Comparative Example D2 Comparative Example D3 Comparative Example D4 Comparative Example D5 Example D1噢纤致暝一 : :ΊΗΗ* Cathode A1 (70) A1(70) A1 (70) A1 (70) A1 (70) A1 (70) Adhesion improving layer SiO (1) SiO (1) SiO ( 1) SiO ( 1 ) SiO (1) Second electron transport layer E-l+0.6% Li (25) E-1+0.8%K (25) El + 0.3% Li + 0.4% K (25) E-1 + 0.3% Li + 0.4% K ( 25 ) E-l + 0.3% Li + 0.4% K (25) First electron transport layer E-1 (35) E -1 (10) E-1 (10) E-1 (10) 1 E-1 (10) E-1 (10) Comparative Example D1 Comparative Example D2 Comparative Example D3 Comparative Example D4 Comparative Example D5 Example D1 ε Bu 5 201212322

JU06S [1-Bu] Emitter layer (EML) H-4+10%D-5 (7.5) /H-4 (7.5) /H-4+10%D-5 (7.5) /H-4 (7.5 H-4+10%D-5 (7.5) /H-4 (7.5) /H-4+10%D-5 (7.5) /H-4 (7.5) H-4+10%D-5 ( 7.5) /H-4 (7.5) /H-4+10%D-5 (7.5) /H-4 (7.5) H-4+10%D-5 (7.5) /H-4 (7.5) /H -4+10%D-5 (7.5) /H-4 (7.5) H-4 + 5%D-5 (30) H-4+10%D-5 (7.5) /H-4 (7.5) / H-4+10%D-5 (7.5) /H-4 (7.5) HTL NPD (10) NPD (10) Inpd (10) NPD (10) NPD (10) NPD (10) Hole injection layer (HIL) 2-TNATA + 1 %F4TCNQ ( 30 ) 2-TNATA+l%F4TCNQ (30) 2-TNATA + 1%F4TCNQ ( 30 ) 2-TNATA+1%F4TCNQ (30) 2-TNATA+1%F4TCNQ (30 2-TNATA + 1 %F4TCNQ ( 30 ) Anode ITO (70) ITO (70) ΓΓΟ (70) ITO (70) ITO (70) ITO (70) Comparative Example El Comparative Example E2 Comparative Example E3 Comparative Example E4 Comparative Example E5 Example El _Fiber 匡: TLH* [3_卜嵴] Cathode A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) A1 (70) Adhesion improvement layer MgF2 (1) MgF2 ( 1) MgF2 ( 1 ) male MgF2 ( 1 ) MgF2 ( 1 ) second electron transport layer gravel E-l + 0.6% Li (40) El + l% Cs (40) El + 0.3% Li + 0.5% Cs (40 E-l+0.3%Li + 0.5%Cs (40) E-1 + 0.3%Li+0.5%Cs ( 40) First electron transport layer E-1 (50) E-1 (10) E-1 (10) E-1 (10) 1 E-1 (10) E-1 (10) Comparative example E1 Comparative example E2 Comparative Example E3 Comparative Example E4 Comparative Example E5 Example El s Inch 201212322 Next, for each of the produced organic electroluminescent devices, the luminous efficiency and luminance half-life of 300 cd/m 2 T were measured in the following manner, 3,_cd Luminous efficiency and party half-life time under /m2, and surface temperature of components at 3 ed/m2. The results are shown in Table 8 to Table 14. <Measurement of luminous efficiency> The luminance of the element driven at a fixed current density (i 〇 mA/cm 2 ) was measured by a spectroradiometer (SR-3 manufactured by Topcon Corporation) at 300 cd/m 2 and 3,000 Cd/m 2 . The current luminous efficiency (cd/A) was determined. <Measurement of luminance half-life time> Constant current was continuously supplied at an initial luminance of 300 cd/m2 and 3,000 cd/m2, and the luminance change was measured by a spectroradiometer (SR_3, manufactured by T〇pc〇n Co., Ltd.) Half of the time is the half-brightness of the brightness. <Measurement of surface temperature> The surface temperature in the vicinity of the center of each of the organic electroluminescent elements of 4 mm 2 was measured using an infrared radiation thermometer (CENTER 352 manufactured by K.K. Scientific Co., Ltd.) at 3, 〇〇〇 Cd/m2. [Table 8] 300 cd/m2 3,000 cd/m2 ' ~~ Luminous efficiency (%) Luminance half-life (hr) Luminous efficiency (%) Luminance half-life (hr) Surface temperature (. 〇 Comparative Example A1 10.1 2000 6.2 25 52.0 Comparative Example A2 10.3 2100 5.9 26 53.6 Comparative Example A3 10.1 1800 5.8 23 51.〇~~ Comparative Example A4 Comparative Example A5 10.2 ----- 1900 5.6 24 S33~~ 10.6 p-------- ----------- 1700 5.3 21 51.6 Example A4 10.6 1 A 2210 8.2 48 --- 42.3 -----

75 S 201212322 [Table 9] Average thickness of first electron transport layer (μιη) 300 cd/m2 3,000 cd/m2 Luminous efficiency (%) Luminance half-life (hr) Luminous efficiency (%) Luminance half-life (hr) Surface temperature (°c) Comparative example A6 No 5.5 2200 3.6 54 40.6 Example A1 2 8.2 2100 5.5 56 40.9 Example A2 4 9.3 2250 7.5 55 41.5 Example A3 7 10.4 2110 7.8 53 41.6 Example A4 10 10.6 2210 8.2 48 42.3 Example A5 13 10.7 2120 8.3 48 43.0 Example A6 16 10.8 2050 8.4 43 44.3 Example A7 20 10.7 2200 8.4 27 46.2 The average thickness of the first electron transport layer in Table 9 and the luminous efficiency, luminance half-life, and surface temperature at 3,000 cd/m2 The relationship is shown in Figure 1. As is apparent from the results of Table 9 and Fig. 1, when the average thickness of the first electron-transporting layer is in the range of 5 nm to 15 nm, both the luminous efficiency and the long-lasting property under high luminance can be achieved. [Table 10] 300 cd/m2 3,000 cd/m2 Luminous efficiency (%) Luminance half-life (hr) Luminous efficiency (%) Luminance half-life (hr) Surface temperature (0 〇 Comparative Example B1 16.3 9800 11.2 123 46.0 Comparison Example B2 16.8 10000 11,2 126 43.9 Comparative Example B3 16.9 9000 12.2 113 44.2 Comparative Example B4 16.5 9500 11.2 120 46.1 Comparative Example B5 16.1 8500 12.0 107 45.0 Example B4 16.5 11000 14.2 260 39.0 [Table 11] First electron transmission 300 cd /m2 3,000 cd/m^ 76 201212322 f Brightness half-life upper (hr) ^/W Thickness (μηι) Like no efficiency (%) Luminous efficiency (%) Luminance half-life (hr) Surface temperature (°C) Comparison Example B6 No 9.2 12000 8.3 255 38 5 Example B1 2 12.3 11000 10.2 270 38 1 Example B2 4 14.9 12000 12.2 255 38.5 Example B3 7 16.2 10000 13.9~~ 260 38.6 Example B4 Example B5 - 10 ~~- 16.5 ~1^9 ~ 11000 14.2 260 39.0 11000 14.9 250 41.3 Example B6 16 17.1 12000 15.1 ~~ 43.3 Example B7 17.0 220 /U 11500 15.0 120 47.3 The average thickness of the first electron transport layer in the table is 3, 〇〇〇cd/m2 Relationship between luminous efficiency, half-life time, and surface temperature In Figure 2. The wide; ^ results in Table 11 and FIG. 2 shows that if the first - the average thickness of the electron transport layer is in the range of 5 nm~15 two coffee apos be both luminous efficiency and durability at a high brightness.

[Table 13]

Luminous efficiency (%) Luminance half-life (hr) Luminous efficiency 2.9% Luminance half-life (hr) 252 Comparative Example Dl 4.9% Surface temperature (°C) 62.0 20000 77

S 201212322 f Comparative Example D2 5.6% 22000 Comparative Example D3 5.1% 22000 Comparative Example D4 5.3% 20000 - Comparative Example D5 4.9% 19000 Example D1 5.0% 20000 ' [Table 14] 300 cd/m2 Luminous efficiency Brightness half-time λ ( %) (hr) Comparative Example E1 17.6% 15000 Comparative Example E2 18.2% 16000 Comparative Example E3 18.2% 14000 Comparative Example E4 17.3% 14500 Comparative Example E5 17.6% 14500 Example E1 17.9% 15000

As is clear from the results of Tables 8 to I4, in the examples A1 to m, by changing the structure of the electro-optical excitation light element, the surface temperature of the high-intensity brightness can be suppressed from rising, and as a result, the decrease in the luminous efficiency at the time of high luminance is suppressed, and the resistance is suppressed. Improved. On the other hand, in the comparative example, the increase in temperature at the time of high luminance was large, and the luminous efficiency was significantly lowered as compared with the low luminance, and the durability was also inferior to that of the organic electroluminescent device of the present invention. The organic electroluminescent device of the present invention is suitable for use in, for example, display elements, displays, backlights, electronic photographs, illumination sources, since it can prevent a decrease in luminous efficiency in a high-luminance region and can improve durability in use in high-brightness use. Recording light source, exposure light source, reading light source, marking, viewing materials, optical communication, etc. ^

S 78 201212322 f [Simple description of the drawings] Fig. 1 shows the relationship between the average thickness of the first electron-transporting layer in Comparative Example A6 and Examples A1 to A7 and the luminous efficiency, luminance half-life and surface temperature at 3000 cd/m2. Fig. 2 is a graph showing the relationship between the average thickness of the first electron-transporting layer in Comparative Example B6 and Examples B2 to B8 and the luminous efficiency, luminance half-life and surface temperature at 3000 cd/m2. [Main component symbol description] No 0

79 S

Claims (1)

201212322 f VII. Patent Application Range: 1. An organic electroluminescent device comprising an organic layer comprising at least a light-emitting layer and an electron transport layer between an anode and a cathode, wherein the light-emitting layer in a comprises at least 2 a layer of a light-emitting material doped layer, and at least 1 layer of a non-doped layer of a light-emitting material, the electron-transport layer comprising two or more kinds of reducing dopants, and comprising at least one of the organic layer and the anode and the cathode An adhesion improving layer of an inorganic compound. 2. The organic electroluminescent device of claim 1, wherein the non-doped thickness of the luminescent material is greater than the thickness of the doped layer of the luminescent material. 3. The organic electroluminescent device according to claim 1, wherein the body of the (4) non-recording layer of the optical material has the same composition as the main material of the doping layer constituting the doping layer of the luminescent material. The organic electroluminescent device of claim 1, wherein the additive improving layer comprising an inorganic compound is included between the organic layer and the cathode. 5. The organic electroluminescent device according to claim 4, wherein the inorganic compound is at least one selected from the group consisting of LiF, Li20, MgF2, CaF2, NaF and Si. 6. The organic electroluminescent device according to claim 1, wherein the reducing dopant is at least two selected from the group consisting of Li, K and Cs. 7. The organic electroluminescent device of claim 1, wherein the reducing dopant is present in an amount of 0.01 to 3 wt%. The organic electroluminescent device of claim 1, wherein the electron transporting layer comprises, in order from the anode side, a first electron transport layer adjacent to the light emitting layer, and the first a second electron transport layer adjacent to the electron transport layer, the second electron transport layer containing two or more kinds of reducing dopants, and the first electron transport layer includes the second electron in addition to the reducing dopant The same material as the transport layer. 9. The organic electroluminescent device of claim 8, wherein the first electron transport layer has an average thickness of 5 to 15 nm. S 81