TW200845110A - Method and apparatus for controlling gas flow to a processing chamber - Google Patents

Method and apparatus for controlling gas flow to a processing chamber Download PDF

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Publication number
TW200845110A
TW200845110A TW97106674A TW97106674A TW200845110A TW 200845110 A TW200845110 A TW 200845110A TW 97106674 A TW97106674 A TW 97106674A TW 97106674 A TW97106674 A TW 97106674A TW 200845110 A TW200845110 A TW 200845110A
Authority
TW
Taiwan
Prior art keywords
gas
flow
coupled
outlets
lines
Prior art date
Application number
TW97106674A
Other languages
English (en)
Chinese (zh)
Inventor
Ezra Robert Gold
Richard Charles Fovell
James Patrick Cruse
Jared Ahmad Lee
Bruno Geoffrion
Jr Douglas Arthur Buchberger
Martin Jeffrey Salinas
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200845110A publication Critical patent/TW200845110A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7758—Pilot or servo controlled
    • Y10T137/7761—Electrically actuated valve
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87249—Multiple inlet with multiple outlet

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW97106674A 2007-02-26 2008-02-26 Method and apparatus for controlling gas flow to a processing chamber TW200845110A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/678,622 US7775236B2 (en) 2007-02-26 2007-02-26 Method and apparatus for controlling gas flow to a processing chamber

Publications (1)

Publication Number Publication Date
TW200845110A true TW200845110A (en) 2008-11-16

Family

ID=39581834

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97106674A TW200845110A (en) 2007-02-26 2008-02-26 Method and apparatus for controlling gas flow to a processing chamber

Country Status (7)

Country Link
US (1) US7775236B2 (https=)
EP (1) EP1961837A1 (https=)
JP (1) JP2008211218A (https=)
KR (1) KR100975442B1 (https=)
CN (1) CN101256937B (https=)
SG (1) SG145663A1 (https=)
TW (1) TW200845110A (https=)

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US11555730B2 (en) 2020-10-09 2023-01-17 Applied Materials, Inc. In-situ method and apparatus for measuring fluid resistivity

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11555730B2 (en) 2020-10-09 2023-01-17 Applied Materials, Inc. In-situ method and apparatus for measuring fluid resistivity

Also Published As

Publication number Publication date
US7775236B2 (en) 2010-08-17
KR20080079211A (ko) 2008-08-29
CN101256937B (zh) 2012-08-22
CN101256937A (zh) 2008-09-03
KR100975442B1 (ko) 2010-08-11
EP1961837A1 (en) 2008-08-27
US20080202610A1 (en) 2008-08-28
SG145663A1 (en) 2008-09-29
JP2008211218A (ja) 2008-09-11

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