200830334 九、發明說明： 【發明所屬之技術領域】 本發明是有關一種高功率電流感應微電阻元件 之製造方法，特別是指藉由將電阻原片和導熱片分別 成型為具有特殊阻值與特殊斷路設計之高散熱效能 線路陣列形式後，封裝成型後，再經被覆、印刷及切 剎等製程，構成具有高負載功率之電流感應微電阻元 件〇 【先前技術】 。 眾所周知，電壓係電阻與電流的乘積（V = RI )。 :般而言，為了要提供電子元件穩定的電流，穩定的 電阻為一必要條件；由於精密電子元件上的電壓、電 阻、電流等物理量，會因為基板上電子元件的微小差 異而產生極大變化，因此精密電子元件的電阻與電流 (J 的穩定性乃格外重要。 —而心著電子電路系統功能表現需求的發展，電阻 疋件有报大的突破與改變，傳統晶片型電阻元件，對 於電阻值精度的控制，或是元件因為消耗功率所產生 的溫度上升所導致元件冑阻值產白々重要來數 .-電阻溫度係數（TCR)，使晶片型電阻的發展受到 很大的限制。 公告第540829號專利案說明習見晶片型電阻元 件的製程：在陶瓷基板1〇1(如第1Α與第ΐβ圖所示 5 200830334 上，先於反面兩側邊被覆電極導體材料102(如第 與第1D圖所示），·其次於正面兩側被覆另一電極導體 材料1〇3(如第1E與第1F圖所示）；再其次，於其正面 中央部份被覆電阻材料104(如第1G與第lH'圖所 示)；然後，於電阻材料104上方被覆電阻絕緣覆蓋材 料1〇5(如第II與第u圖所示）；又於電阻絕緣覆蓋材 料105之上被覆電阻保護覆蓋材料1〇6(如第ικ盥第200830334 IX. Description of the Invention: [Technical Field] The present invention relates to a method for manufacturing a high-power current-sensing micro-resistive element, in particular, by forming a resistor main sheet and a heat-conducting sheet into a special resistance value and a special After the high-efficiency performance line array form of the open circuit design, after the package is formed, the process of coating, printing and cutting brakes is used to form a current-sensing micro-resistive element with high load power [Prior Art]. It is well known that the voltage is the product of the resistance and current (V = RI). Generally speaking, in order to provide a stable current of electronic components, a stable resistance is a necessary condition; since physical quantities such as voltage, resistance, and current on precision electronic components may vary greatly due to slight differences in electronic components on the substrate, Therefore, the resistance and current of precision electronic components (the stability of J is particularly important. - While the development of the functional requirements of electronic circuit systems, the resistance components have made great breakthroughs and changes, the traditional wafer-type resistance components, for the resistance value Accuracy control, or the temperature rise caused by the power consumption of the component causes the component resistance value to be white. The temperature coefficient of resistance (TCR) greatly limits the development of the chip resistor. Announcement No. 540829 The patent description describes the process of the wafer-type resistive element: on the ceramic substrate 1〇1 (as shown in the first Α and ΐβ diagrams 5 200830334, the electrode conductor material 102 is coated on both sides of the opposite side (as in the first and the first Shown), secondly, the other electrode conductor material 1〇3 is covered on both sides of the front side (as shown in Figures 1E and 1F); secondly, on the front side The central portion is covered with a resistive material 104 (as shown in FIGS. 1G and 1H'); then, a resistive insulating covering material 1〇5 is applied over the resistive material 104 (as shown in FIGS. II and u); The insulating covering material 105 is covered with a resistance protection covering material 1〇6 (such as the first 盥κ盥
C Ο 1L圖所示）；再於料基㈣1端面及兩側邊之電極材 =二1()3上，被覆正反面電極導體連接材料(如 f心1NSI所示）；最後，依次於正反面電極導體 連接材料107上被覆第一銲接人 1咖圖所示):以及第^ 一 弟—鲜接介面層材料109(如 Q。弟1R®所*)，上述之製程與結構中，除了正 反=面電極導體連接材料107與銲接介面層⑽、⑽ 準曰K刑/+ p刷衣耘與相關材料來構成標 旱日日片型厚朕電阻元件的結構。 *由乂上白見曰曰片型電阻元件之製程說明可知，將 =材料直接被覆在陶究基板（或氧化銘基板）上的 :二使得電流流經電阻材料時所產 =當使用於具有較大電流(功率)的產品時; 易因為其元件溫度過高（約i20〜130Tm „ ^ 合 值明顯變化，導致盔法庐 使產品的阻 有鐘於此，本發明人= 確的量測電流值。 乃針對該缺點研究改進之道 6 200830334 ，經長時研纽良，、终於有纟發明之產生。 【發明内容】 因此’本發明旨在提供—種高功率電流感應微電 且疋件之製造方法，特別是指將電阻原片和導轨片經 衝麗或姓刻等方式形成陣列後，再經壓合、灌注封 ^保護層被覆及切割等製程，構成具有高功率電流 - 感應之微電阻元件者。 本發月之★目的在提供—種高功率電流感應 j電阻7G件之製造方法，主要透過預先成型為陣列型 心：私阻原片和導熱片之結合封裝，使微電阻元件具 - 備高散熱性能，當其安裝於電子電器產品時，可增加 -其使用之穩定性，進而可使微電流感應更加精準確 實。 本發明之再一目的在提供一種高功率電流感應 ％阻元件之製造方法，其所使用之散熱片材料，可 I’ I導熱金屬、導熱高分子或石墨，當散熱片材料與電 - 阻原片結合後，可使電阻元件本體的上限溫度維持在 、、、勺60 70 c，而能用以提昇電流感測電阻元件之操作 功率（Rate Voltage)。 、 本發明之又一目的在提供一種高功率電流感應 微電阻元件之製造方法，其微電阻元件具備高散埶性 能之特性，能承受更高的電流流通，不至於影響微電 阻元件之正常操作（不易熱損壞）。 7 200830334 本發明之又一目的在提供一種高功率電流感應 微電阻元件之製造方法，由於微電阻元件的表面溫度 能得到良好的控制，故可應用於更高電流負載的電= 設計，加速高負載電路的發展與使用。 至於本發明之詳細構造、應用原理、作用與功效 ’則可芩照下列依附圖所做之說明即可得到完全的瞭 解0 '、 L貫施方式】 &本發明<此種高功率電流感應微電阻元件之 以方法，請參照第2圖，其製造步驟包括： 义 電阻原片成型步驟：以衝厣_ U ^ Μ衝壓或蝕刻等方式將 =成型為一具特殊阻值需求之電阻陣列； 、片成型步驟：卩衝壓或蝕 一具有特定線路設計之導熱片陣列；+方式衣備 結合步驟：以壓合岑斑荽 陣列與導熱片陣列社人二/方式’將上述電阻 封裝步驟方==體； 之微電，基體包覆，形成微電阻二“成型為-體 保護層被覆步驟· 護層被覆； .於微電阻封包表面進行保 印刷步驟··於微電阻 數字印刷； t 0表面進行電阻阻值之 切割步驟♦•將微電 τ已备預疋線距進行切 200830334 °丨】以形成可單獨被使用之微電組單元； :電極製備步驟：☆微電阻單元 仃端電極被覆； ％ 形成高負載功率之電流感應微電阻元件。 上述之電阻原片成型步驟，主要根據使用電子元 =同電阻值需求而設計出符合該電阻值需求的 預疋形狀，使電阻原片或導熱片成型為陣列型態之 (C Ο 1L shown in the figure); and then on the front side of the material base (4) and the electrode material on both sides = two 1 () 3, the front and back electrode conductor connecting materials are covered (as shown by f heart 1NSI); The reverse electrode conductor connecting material 107 is coated on the first soldering person 1 as shown in the figure: and the first younger-fresh interface material 109 (such as Q. 1R®*), except for the above processes and structures. The front and back = surface electrode conductor connecting material 107 and the soldering interface layer (10), (10), and the related materials constitute the structure of the dry day and day type thick-type resistive element. *Because of the process description of the 曰曰-type 电阻-type resistive element, it is known that the material is directly coated on the ceramic substrate (or oxidized substrate): the second is made when the current flows through the resistive material. When the product is in a large current (power); it is easy to measure because the temperature of the component is too high (about i20~130Tm „ ^ the value changes significantly, causing the helmet method to block the product, the inventor = accurate measurement The current value is the improvement method for this shortcoming. 6 200830334, after a long time research, New Zealand, finally has the invention. [Invention] Therefore, the present invention aims to provide a high-power current-sensing micro-electricity and The manufacturing method of the component, in particular, means that the original film and the guide piece are formed into an array by means of punching or surname, and then subjected to a process such as pressing, filling, sealing, and cutting to form a high power current. - Inductive micro-resistive components. The purpose of this month is to provide a high-power current-sensing j-resistance 7G device manufacturing method, mainly through pre-forming into an array core: a combination of a private resistive original film and a thermal conductive sheet. Make micro-electricity The component has a high heat dissipation performance, and when it is installed in an electronic and electrical product, it can be increased - the stability of its use, thereby making the micro current induction more accurate and sure. Another object of the present invention is to provide a high power current sensing % The manufacturing method of the resistive element, the heat sink material used therein, can be I'I thermal conductive metal, thermal conductive polymer or graphite, and when the heat sink material is combined with the electric-resistive original sheet, the upper limit temperature of the resistive element body can be maintained at And a spoon 60 70 c, which can be used to increase the operating voltage of the current sensing resistor element. Another object of the present invention is to provide a method for manufacturing a high power current sensing micro resistance element, the micro resistance The component has the characteristics of high divergence performance, can withstand higher current circulation, and does not affect the normal operation of the micro-resistance component (not susceptible to thermal damage). 7 200830334 Another object of the present invention is to provide a high-power current-sensing micro-resistance component. The manufacturing method can be applied to a higher current load because the surface temperature of the micro-resistance element can be well controlled. Accelerate the development and use of high-load circuits. As for the detailed structure, application principle, function and effect of the present invention, we can get a complete understanding of the following descriptions according to the following drawings. &The present invention<A method of using such a high-power current-sensing micro-resistive element, please refer to FIG. 2, the manufacturing steps of which include: the original step of forming the original resistor: stamping or etching by means of 厣 U U ^ Μ = Formed as a resistor array with special resistance requirements; Sheet forming step: stamping or etching a thermally conductive sheet array with a specific line design; + way clothing bonding step: pressing the array of 岑 荽 and the array of thermal pads The second person/method of 'the above-mentioned resistor packaging step == body; the micro-electricity, the substrate is coated to form the micro-resistance two" forming into a body-protective layer coating step · sheath coating; protect the surface of the micro-resistance package Printing step · · micro-resistance digital printing; t 0 surface to cut resistance resistance step ♦ • micro-electric τ has prepared the pre-twist line distance cut 200830334 ° 丨 to form a separate micro-electricity Group unit; : Electrode preparation steps: ☆ micro-resistance unit 仃 terminal electrode coating; % form a high-load power current-sensing micro-resistance element. In the above-mentioned step of forming the resistor original sheet, the original shape of the resistor or the heat conductive sheet is formed into an array type mainly according to the requirement of using the electron element=the same resistance value to prepare the shape of the resistor.
C =制可為衝麗製程或蝕刻製程’或者是衝壓製程和： 刻衣程同時配合形成陣列。 本毛明之南功率電流感應微電阻元件之製造方 如第3A®所示’首先選取適#的材料作為電阻 1，依電子元件I阻值之需求，於電阻原片31 上設計出可產生預定阻值之陣列線型32，再以衝壓或 j刻等方式依電阻原片31上之陣列線型32加工，形成 符合特定電阻值之電阻陣列33(如第3B圖所示）； 請參照第3C圖，選取適當的材料（例如導熱金 屬、導熱高分子或石墨）作為導熱片41，於導熱片41 上依特定線路需求而設計出線路線型42，其線路線型 42需能與電阻原片31之電阻陣列33配合，然後，以衝 壓或钱刻等方式依導熱片41之線路線型42加工，而形 成符合特定線路設計之導熱片陣列43(如第3D圖所 示）； 凊參照第3E圖，將前述各別成型之電阻陣列 200830334C = can be a process or an etching process, or a stamping process and: the inscription process simultaneously forms an array. The manufacturing method of the south power-current-sensing micro-resistive component of the present invention is as shown in the 3A®. First, the material of the appropriate material is selected as the resistor 1. According to the demand of the resistance of the electronic component I, the design of the original resistor 31 can be generated. The resistance array array type 32 is processed by the array line type 32 on the resistor original sheet 31 by stamping or j-cutting to form a resistor array 33 conforming to a specific resistance value (as shown in FIG. 3B); please refer to FIG. 3C A suitable material (for example, a heat conductive metal, a heat conductive polymer or graphite) is selected as the heat conductive sheet 41, and a line type 42 is designed on the heat conductive sheet 41 according to a specific line requirement, and the line type 42 needs to be able to be combined with the resistor original sheet 31. The resistor array 33 is matched, and then processed by the line pattern 42 of the thermal conductive sheet 41 by stamping or engraving to form a thermally conductive sheet array 43 conforming to a specific circuit design (as shown in FIG. 3D); 凊 refer to the 3E Figure, the aforementioned separately formed resistor array 200830334
和導熱片陣列43，以黏膠等黏著薄層5設於其間，然 後予以壓合，而成型出微電阻基體6(如第3F圖所 不），然後，如第3G圖所示，將此微電阻基體6放入模 八中填充環氧樹脂（ΕΡΟχγ)作為填封劑，將微電阻 基虹6包覆，而得出微電阻封包7;該微電阻封包7内， 經由電阻陣列33和導熱片陣列43的結合，封包後，可 明顯區分出多數個微電阻成型單元71、72、乃、74、 75，接著，如第3H圖所示，在各個微電阻成型單元 71、72、73、74、75上印刷電阻阻值數字81 ;然後， 再以粒斷工具或雷射切割方式將各個微電阻成型單 元71 72 73、74、75分離（如第31圖所示）；接著， 再如第3 J圖所示，於各個微電阻成型單元7丨、7 2、7 3、 74、75兩端進行端電極82被覆，最後，得出具有高負 載力率特f·生之％流感應微電阻元件91、9 2、9 3、9 4、 95 ° 經由本發明之製造方法所製得之電流感應微電 阻几件’由於每-微電阻元件内均有容易傳熱、導孰 及散熱之導熱片’因此’其整體的溫度可被有效地控 制在6〇〜7代之間，依此特性，當微電阻it件被使用 於南速度高負載的電子電路元件時，不會產生因為溫 度過南而影響其電阻阻值之情形。因此，由以上方法 所製得之微電阻元件，極具使用上之功效。 請參照第4圖，經由本發明所製得之電流感應微 200830334 電阻元件與習見微電阻元件之負載功率-溫度關係 圖，該關係圖中顯示，在相同的負載功率下（例如2 瓦）’習見微電阻元件的表面溫度達到118ΐ，而本發 月所衣知之電流感應微電阻的表面溫度則僅有Μ :’由此可知，本發明所製得之電流感應微電阻元 ==的品質對於高功率精密產品而言 極佳之穩定元件。 门 ( 措由上述構成，本發明古 元件之^ 率電流感應微電阻 兀什之衣以方法，確實可製 Ά ^ 月匕徒幵負載功率之電 2 "阻疋件，其並未見諸公開使用，人於真刹 法之規定，料賜料利，實為德便 、專利 需陳明者，以上所述乃是本 例’若依本發明之構想所作之改變，上 作用仍未超出說明書及圓 ^生之功能 本發明之範圍内，合予陳明。〜之精神時，均應在 (j 11 200830334 【圖式簡單說明】 第1A〜1R圖係習見晶片型電阻元件之製造流程 表示圖。 况王 第2圖係本發明之高功率電流感應微電阻元件 之製造方法流程圖。 元件之製造方法的流程表示圖。 第4圖係本發明之言# &And the thermally conductive sheet array 43 is provided with an adhesive layer 5 such as an adhesive, and then pressed to form the micro-resistor substrate 6 (as shown in FIG. 3F), and then, as shown in FIG. 3G, The micro-resistor substrate 6 is filled with a die-filled epoxy resin (ΕΡΟχγ) as a potting agent, and the micro-resistance base 6 is coated to obtain a micro-resistance package 7; the micro-resistance package 7 is passed through the resistor array 33 and After the combination of the thermally conductive sheet arrays 43, after the encapsulation, a plurality of micro-resistance molding units 71, 72, 74, 75 can be clearly distinguished, and then, as shown in FIG. 3H, the respective micro-resistance molding units 71, 72, 73 , 74, 75 printed resistive resistance number 81; then, separate the micro-resistance forming units 71 72 73, 74, 75 by the particle cutting tool or laser cutting method (as shown in Figure 31); then, As shown in Fig. 3J, the terminal electrodes 82 are covered at the ends of the respective micro-resistance forming units 7丨, 7 2, 7 3, 74, 75, and finally, the flu with a high load rate is obtained. The sense of current produced by the manufacturing method of the present invention by the micro-resistance elements 91, 9 2, 9 3, 94, 95 ° A few pieces of micro-resistance 'Because there is a heat-conducting piece that easily transfers heat, guides and dissipates heat in each micro-resistance element', so the overall temperature can be effectively controlled between 6〇~7 generations, according to this characteristic, When the micro-resistance piece is used in an electronic circuit component with a high speed at a south speed, it does not cause a situation in which the resistance value is affected because the temperature is too south. Therefore, the micro-resistive element produced by the above method has a very useful effect. Referring to FIG. 4, the load power-temperature relationship diagram of the current sensing micro 200830334 resistive element and the conventional micro resistance element prepared by the present invention is shown in the relationship diagram, at the same load power (for example, 2 watts). It is seen that the surface temperature of the micro-resistance element reaches 118 ΐ, and the surface temperature of the current-sensing micro-resistor known in the present month is only Μ : ' It can be seen that the quality of the current-sensing micro-resistance element== produced by the present invention is Excellent stability components for high power precision products. The door (the above-mentioned composition, the ancient element of the present invention, the current-sensing micro-resistance, the method of clothing, can indeed be used to make the electric power of the 2 quot 匕 幵 load power, which is not seen Public use, the provisions of the people in the real brake law, expected to give benefits, in fact, the virtues, patents need to be clearly stated, the above is the case of this example, if the changes made according to the concept of the invention, the role has not exceeded The specification and the function of the circle and the life of the invention are combined with the spirit of the present invention. (j 11 200830334 [Simple description of the diagram] The 1A~1R diagram shows the manufacturing process of the wafer type resistive element. Fig. 2 is a flow chart showing a method for manufacturing a high-power current-sensing micro-resistance element of the present invention. A flow chart showing a method for manufacturing a device. Fig. 4 is a view of the present invention # &
之負載功率-溫度關係圖。 第3A〜3J圖係本發明之高功率電流感應微電阻 愿儆1：阻元件 見微電阻元件 12 200830334 【主要元件符號說明】 101 :陶瓷基板 102 :電極導體材料 10 3 ·電極導體材料 104 :電阻材料 105 :電阻絕緣覆蓋材料 106 :電阻保護覆蓋材料 107:正反面電極導體連接材料 108 :第一銲接介面層材料 109 :第二銲接介面層材料 31 :電阻原片 3 2 :陣列線型 33 :電阻陣列 41 :導熱片 42 ·線路線型 43 :導熱片陣列 5 :黏著薄層 6 ··微電阻基體 7 ··微電阻封包 71、72、73、74、75 :微電阻成型單元 81 :電阻阻值數字 82 :端電極 91 ' 92 ' 93、94、95 :電流感應微電阻元件 13Load power-temperature diagram. 3A to 3J are high-power current-sensing micro-resistors of the present invention. 1: Resistive elements are shown as micro-resistive elements 12 200830334 [Description of main components] 101: Ceramic substrate 102: Electrode conductor material 10 3 · Electrode conductor material 104: Resistive material 105: resistance insulating covering material 106: resistance protective covering material 107: front and back electrode conductor connecting material 108: first soldering interface layer material 109: second soldering interface layer material 31: resistive original sheet 3 2 : array line type 33: Resistor array 41: thermally conductive sheet 42 • line type 43: thermally conductive sheet array 5: adhesive thin layer 6 · micro-resistive substrate 7 · micro-resistance package 71, 72, 73, 74, 75: micro-resistance molding unit 81: resistance Resistance value 82: terminal electrode 91 ' 92 ' 93, 94, 95: current-sensing micro-resistance element 13