TWM364272U - Heat dissipation substrate having superior heat dissipation capability - Google Patents

Heat dissipation substrate having superior heat dissipation capability Download PDF

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Publication number
TWM364272U
TWM364272U TW98204091U TW98204091U TWM364272U TW M364272 U TWM364272 U TW M364272U TW 98204091 U TW98204091 U TW 98204091U TW 98204091 U TW98204091 U TW 98204091U TW M364272 U TWM364272 U TW M364272U
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Taiwan
Prior art keywords
film
metal
heat
dissipating substrate
thermally conductive
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TW98204091U
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Chinese (zh)
Inventor
Chih-Yang Hsiao
Hsun-Yung Wang
Teng-Kuei Lin
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Lead Data Inc
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Priority to TW98204091U priority Critical patent/TWM364272U/en
Publication of TWM364272U publication Critical patent/TWM364272U/en

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Abstract

A heat dissipation substrate having superior heat dissipation capability is provided. The heat dissipation substrate includes a metal heat dissipation plate, a heat conduction ceramic film and a patterned metal electrically conductive film. The heat conduction ceramic film is formed on the metal heat dissipation plate, and the patterned metal electrically conductive film is formed on the heat conduction ceramic film. The patterned metal electrically conductive film has an electrical connection area, and the electrical connection area is adapted to be electrically connected with a heating element.

Description

M364272 五、新型說明: 【新型所屬之技術領域】 本創作係有關於一種散熱裝置,特別係有關於—種高功率 熱基板。 【先前技術】 如第1圖所示,習知散熱基板10主要包含有一金屬散熱片 11、一設置於金屬散熱片u上之導熱粘著樹脂12,複數銅導線 .丨3設置於導触著触12之上,㈣發熱祕主要做置於複數 &gt;銅導線I3上。高發熱元件工作時所產生的熱係藉由導熱枯著樹脂 12傳導至金屬散熱板u,再經由金屬散熱板U進行散熱。惟,曰 習知之導熱枯著樹脂I2通常為高分子環氧樹脂(Ep〇xy),其熱傳 導性(thermal conductivity)極低,使得散熱基板1〇存在散熱障礙, 無法符合各種高發熱元件如高神發光二極體(LED)、變 ^品使用之積體電路’並且導致元件的使轉命因高熱而下 降〇 1 【新型内容】 冑#独上1 ’本創作提供—種高功率散熱基板。 今ίϊΐΓ優點、、’·本創作提出—種高功率散熱基板,其包含 ==膜_成於金屬散熱板上,圖形化金』H= ㈣膜上。圖形化金屬導電膜係具有電性連接 此电性連接區係具有可供電性連接發熱元件。 °° 本創作之導熱陶瓷薄膜係可防止 提高金屬散熱板之使用壽命,此外,本^’進而可 的導熱陶兗薄膜因具有高導執性 7之南功率放熱基板 熱元件之散熱效能。又’本創作之生產方式; 3 M364272 低製作成本。 【實施方式】 為使本創作之上述特徵及優點更明顯易懂、下文依本創作 之高功率散熱基板特舉較佳實施例,並配合所附相關圖示,詳 細說明如下: 请參閱第2圖,其係本創作之—較佳實施例,一種高功率 散熱基板20係包含一金屬散熱板21、—導熱陶瓷薄膜22、一 圖形化金屬導電膜23、導電厚膜金屬層24、以及一防焊層25。 在本實施例中,金屬散熱板21之材質係可為鋁、銅、鎂、 鈦等或前述金屬組成的具有高導熱性材料製成,其中,使用於 本實施例的金屬基板21是由鋁金屬所製成之鋁基板。 、 導熱喊_ 22係可以濺財式形成於金屬散熱板21 ^形成-阻隔空氣之隔絕層’用以防止金屬散熱板21氧 莞薄熱板21之使料命。此外,因導熱陶 瓷溥膜22具有⑤電阻,因此同時可作為 化金屬導電膜23間的電氣絕緣層 上板弋與圖形 陶細22之材質係可為具有高導熱::此導^ 有助於提昇對發熱元件之散熱效能。 I⑽□此’亦 圖型化金屬導電膜23係形成於導熱 型化金屬導電膜23係具有電性連接 上’且圖 連接各種發熱元件。當發熱元件(圖 1 ^出),可供電性 時,其工作所產㈣錢可藉連接區 散熱板21,再經由金屬散熱板21進行散熱。、22傳V至金屬 為了提高圖型化金屬導電膜之带 中,高功率散熱基板20係可另包含有,在本實施例 此導電厚膜金屬層24係形成於圖:化全C金屬層24, 、&gt; V電骐23上,用以 M364272 增加圖型化金屬導電膜23之厚度及 另外,請再參Μ 2圖,在 利用印刷製程形成的防焊層25,用骐金屬層24上, 使用之錫沾黏。 防止後續應用時焊接戶^ 需注意的是,在本實施例中,導電厚膜 層25並非必要膜層,其可視不同需求而省略。曰24與防焊M364272 V. New description: [New technical field] This creation is about a heat sink, especially for a high-power thermal substrate. [Previous Art] As shown in FIG. 1 , the conventional heat dissipation substrate 10 mainly includes a metal heat sink 11 , a heat conductive adhesive resin 12 disposed on the metal heat sink u, and a plurality of copper wires. Above the touch 12, (4) the heat secret is mainly placed on the plural &gt; copper wire I3. The heat generated during the operation of the high heat generating element is conducted to the metal heat sink u by the heat conduction drying resin 12, and is then radiated through the metal heat sink U. However, the conventional conductive resin I2 is usually a polymer epoxy resin (Ep〇xy), and its thermal conductivity is extremely low, so that the heat dissipation substrate 1 has a heat dissipation obstacle and cannot meet various high heat-generating components such as high. God's light-emitting diode (LED), the integrated circuit used in the product, and the component's turn-off is lowered due to high heat. [New content] 胄#独上1' This creation provides a high-power heat-dissipating substrate. . Today's advantages, '· This creation proposes a high-power heat-dissipating substrate, which includes == film_on the metal heat sink, patterned gold" H = (four) film. The patterned metal conductive film has an electrical connection. The electrical connection zone has a power supply connection to the heat generating component. °° The thermal conductive ceramic film of this creation can prevent the service life of the metal heat sink from being improved. In addition, the thermal conductive ceramic film of the present invention has the high heat dissipation performance of the thermal component of the south power dissipation substrate. And 'the production method of this creation; 3 M364272 low production cost. [Embodiment] In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following description of the preferred embodiment of the high-power heat-dissipating substrate according to the present invention, together with the accompanying drawings, is described in detail as follows: In the preferred embodiment, a high power heat dissipation substrate 20 includes a metal heat sink 21, a thermally conductive ceramic film 22, a patterned metal conductive film 23, a conductive thick film metal layer 24, and a Solder mask layer 25. In this embodiment, the material of the metal heat sink 21 can be made of aluminum, copper, magnesium, titanium, or the like or a high thermal conductivity material composed of the foregoing metal, wherein the metal substrate 21 used in the embodiment is made of aluminum. An aluminum substrate made of metal. The heat conduction shouting _ 22 system can be formed in the metal heat sink 21 ^ forming - blocking air barrier layer </ RTI> to prevent the metal heat sink 21 from oxidizing the thin hot plate 21. In addition, since the thermally conductive ceramic ruthenium film 22 has 5 resistances, it can be used as an electrical insulating layer between the metal conductive film 23 and the material of the pattern enamel and the graphic ceramics 22 can have high thermal conductivity:: Improve the heat dissipation performance of the heating element. I(10)□ This is also the case where the patterned metal conductive film 23 is formed on the thermally conductive metal conductive film 23 to be electrically connected to each other and the various heat generating elements are connected. When the heating element (Fig. 1) is available for power supply, the work of the heating element (4) can be dissipated by the heat sink 21 and then by the metal heat sink 21. 22, V to metal in order to improve the pattern of the metal conductive film, the high-power heat dissipation substrate 20 may additionally include, in this embodiment, the conductive thick film metal layer 24 is formed in the figure: the full C metal layer 24, , &gt; On the V battery 23, the thickness of the patterned metal conductive film 23 is increased by M364272, and in addition, please refer to Fig. 2, and the solder resist layer 25 formed by the printing process is used for the metal layer 24 On, the tin used is sticky. It is to be noted that in the case of subsequent applications, in the present embodiment, the conductive thick film layer 25 is not necessarily a film layer, which may be omitted depending on various needs.曰24 and anti-welding

雖然本創作已以較佳實施例揭露如上,然其並 本創作,任何熟習此技藝者,在不脫離本創作之精=以=定 内,當可作些許之更動與潤飾,因此本創作之保護‘; 附之申請專利範圍所界定者為準。 &quot;^ 【圖式簡單說明】 圖1繪示為習知散熱基板的示意圖。 圖2繪示依據本創作之一較佳實施例之一種高功率散熱 基板的示意圖。 【主要元件符號說明】 10 .習知散熱基板 11 :金屬散熱片 12 :導熱粘著樹脂 U :銅導線 20 :高功率散熱基板 21 :金屬散熱板 22 :導熱陶竞薄膜 23 :圖型化金屬導電膜 24 :導電厚膜金屬層 25 :防焊層Although the present invention has been disclosed in the above preferred embodiments, it is intended that any person skilled in the art can make some changes and refinements without departing from the essence of the creation. Protection'; as defined in the scope of the patent application. &quot;^ [Simplified Schematic Description] FIG. 1 is a schematic view showing a conventional heat dissipation substrate. 2 is a schematic diagram of a high power heat sink substrate in accordance with a preferred embodiment of the present invention. [Main component symbol description] 10. Conventional heat dissipation substrate 11: Metal heat sink 12: Thermally conductive adhesive resin U: Copper wire 20: High power heat dissipation substrate 21: Metal heat dissipation plate 22: Thermal conductivity Taojing film 23: Patterned metal Conductive film 24: conductive thick film metal layer 25: solder resist layer

Claims (1)

M364272 申請專利範圍: h力率政熱基板,係包含: 一金屬散熱板; 一導熱陶竟薄^ -圖型化金屬:其係形成於該金屬散熱板上;以及 圖型化金屬導,係形成於該導熱陶㈣膜上,該 可供電性連接電性連接區’且該電性連接區係 2.如申請專利範囹结 _ 項所述之如力率散紐板,其中該 金屬散熱板之材質係為域铭合金。 第1項所述之高功率散熱基板,其中該 導熱闹是賴之材質係為氮化紹。 導圍第3項所述之高功率散熱基板,其中該 導熱陶究賴為—單層結構或—多層結構。 5. 範圍第3項所述之高功率散熱基板,其中該 導熱陶兗溥膜之製程為濺鍍。 6. =申請專利關第i項所述之高功率散熱基板,其中該 圖型化金屬導電膜係利用一真空鍵膜或一印刷製程形 成於該導熱陶瓷薄膜上。 =申請專職圍第丨項所狀高辨散祕板,其另包 3有-導電厚膜金屬層’該導電厚膜金屬層係利用一電 鑛製程形成於該圖型化金屬導電膜上,以增厚該金屬 膜。 8. 如申請專娜圍第7項所述之^率散熱基板,其另包 含有-防焊層,該防焊層制用1刷製程形成於該導 電厚膜金屬層上。 9. —種高功率散熱基板,係包含: M364272 一金屬散熱板; 一導熱陶兗薄膜,其係形成於該金屬散熱板上;以及 一圖型化金屬導電膜,係形成於該導熱陶瓷薄膜上。 10. 如申請專利範圍第9項所述之高功率散熱基板,其 中該金屬散熱板之材質係為紹或銘合金。 11. 如申請專利範圍第9項所述之高功率散熱基板,其 中該導熱陶瓷薄膜之材質係為氮化鋁。 12. 如申請專利範圍第11項所述之高功率散熱基板,其 中該導熱陶瓷薄膜為一單層結構或一多層結構。 13. 如申請專利範圍第11項所述之高功率散熱基板,其 中該導熱陶瓷薄膜之製程為濺鍍。 14. 如申請專利範圍第9項所述之高功率散熱基板,其 中該圖型化金屬導電膜係利用一真空鍍膜或一印刷製 程形成於該導熱陶瓷薄膜上。 15. 如申請專利範圍第9項所述之高功率散熱基板,其 另包含有一導電厚膜金屬層,該導電厚膜金屬層係利用 一電鍍製程形成於該圖型化金屬導電膜上,以增厚該金 屬膜。 16. 如申請專利範圍第15項所述之高功率散熱基板,其 另包含有一防焊層,該防焊層係利用一印刷製程形成於 該導電厚膜金屬層上。 7M364272 Patent application scope: h force rate political thermal substrate, including: a metal heat sink; a thermal ceramic thin film ^ - patterned metal: it is formed on the metal heat sink; and patterned metal guide, Formed on the thermal conductive ceramic (four) film, the power supply connection electrically connecting region 'and the electrical connection region 2. The force rate diffusion plate as described in the patent application, wherein the metal heat dissipation The material of the board is the alloy of the domain name. The high-power heat-dissipating substrate according to Item 1, wherein the heat-conducting material is a nitrided material. The high-power heat-dissipating substrate according to the third item, wherein the heat-conducting ceramics is a single-layer structure or a multi-layer structure. 5. The high power heat dissipating substrate according to item 3, wherein the process of the thermally conductive ceramic film is sputtering. 6. The high-power heat-dissipating substrate described in the above-mentioned patent application, wherein the patterned metal conductive film is formed on the thermally conductive ceramic film by a vacuum bonding film or a printing process. = Application for the high-level secret board of the full-scale 丨 丨 , , , , , , , 有 有 有 有 有 有 有 有 有 有 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' To thicken the metal film. 8. For the application of the heat-dissipating substrate described in item 7 of the special design, the package includes a solder mask, which is formed on the conductive thick film metal layer by a one-pass process. 9. A high-power heat-dissipating substrate comprising: M364272 a metal heat sink; a thermally conductive ceramic film formed on the metal heat sink; and a patterned metal conductive film formed on the thermally conductive ceramic film on. 10. The high-power heat-dissipating substrate according to claim 9, wherein the metal heat-dissipating plate is made of Shao or Ming alloy. 11. The high power heat dissipating substrate according to claim 9, wherein the material of the thermally conductive ceramic film is aluminum nitride. 12. The high power heat dissipating substrate of claim 11, wherein the thermally conductive ceramic film is a single layer structure or a multilayer structure. 13. The high power heat dissipating substrate of claim 11, wherein the thermally conductive ceramic film is sputtered. 14. The high power heat dissipating substrate of claim 9, wherein the patterned metal conductive film is formed on the thermally conductive ceramic film by a vacuum coating or a printing process. 15. The high-power heat-dissipating substrate according to claim 9, further comprising a conductive thick-film metal layer formed on the patterned metal conductive film by an electroplating process, The metal film is thickened. 16. The high power heat dissipating substrate of claim 15 further comprising a solder resist layer formed on the conductive thick film metal layer by a printing process. 7
TW98204091U 2009-03-16 2009-03-16 Heat dissipation substrate having superior heat dissipation capability TWM364272U (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956576A (en) * 2011-08-29 2013-03-06 奇鋐科技股份有限公司 Heat radiation device and manufacturing method thereof
CN103117335A (en) * 2011-11-16 2013-05-22 和淞科技股份有限公司 Preparation method of compound type metal ceramic substrate provided with circuit and structure thereof
CN103114261A (en) * 2011-11-16 2013-05-22 和淞科技股份有限公司 Preparation method and structure of composite metal ceramic substrate
US8659160B2 (en) 2010-12-31 2014-02-25 Industrial Technology Research Institute Die structure, manufacturing method and substrate thereof
TWI507289B (en) * 2010-01-26 2015-11-11 Irex Inc Heat-dissipating sheet and method for manufacturing heat-dissipating sheet
TWI808521B (en) * 2021-10-29 2023-07-11 艾姆勒科技股份有限公司 Surface modification and bonding method of heat-dissipation device for vehicle

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI507289B (en) * 2010-01-26 2015-11-11 Irex Inc Heat-dissipating sheet and method for manufacturing heat-dissipating sheet
US8659160B2 (en) 2010-12-31 2014-02-25 Industrial Technology Research Institute Die structure, manufacturing method and substrate thereof
CN102956576A (en) * 2011-08-29 2013-03-06 奇鋐科技股份有限公司 Heat radiation device and manufacturing method thereof
CN102956576B (en) * 2011-08-29 2015-12-02 奇鋐科技股份有限公司 Heat abstractor and manufacture method thereof
CN103117335A (en) * 2011-11-16 2013-05-22 和淞科技股份有限公司 Preparation method of compound type metal ceramic substrate provided with circuit and structure thereof
CN103114261A (en) * 2011-11-16 2013-05-22 和淞科技股份有限公司 Preparation method and structure of composite metal ceramic substrate
TWI808521B (en) * 2021-10-29 2023-07-11 艾姆勒科技股份有限公司 Surface modification and bonding method of heat-dissipation device for vehicle

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