JP4876612B2 - Insulated heat transfer structure and power module substrate - Google Patents

Insulated heat transfer structure and power module substrate Download PDF

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JP4876612B2
JP4876612B2 JP2006036713A JP2006036713A JP4876612B2 JP 4876612 B2 JP4876612 B2 JP 4876612B2 JP 2006036713 A JP2006036713 A JP 2006036713A JP 2006036713 A JP2006036713 A JP 2006036713A JP 4876612 B2 JP4876612 B2 JP 4876612B2
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thermal conductor
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transfer structure
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JP2006270062A (en
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敏之 長瀬
健 根岸
隆二 植杉
和男 山本
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an insulating heat-transfer structure and a substrate for a power module capable of efficiently transferring the heat on a heating body side to a heat sink side for dispersing heat, and exhibiting stable performance for an extended period even if thermal deformation occurs under such action as temperature cycle. <P>SOLUTION: There are provided an insulator layer 2 and high heat-transfer body layers 3 and 4 arranged on both side of the insulator layer 2. The insulator layer 2 comprises a junction layer 5 and diamond particles 6 projected into the high heat-transfer body layers 3 and 4. The projection area of the diamond particles 6 on the interface between the high heat-transfer body layers 3 and 4 and the insulator layer 2 is 20-60% of the area of the interface. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

Description

本発明は、絶縁伝熱構造体及びその製造方法に関し、特に、半導体チップなどの電子部品、電子部品が実装される回路基板などの発熱体とヒートシンク、ヒートブロックなどの放熱体との間に介装される絶縁伝熱構造体及びこれを備えるパワーモジュール用基板に関するものである。   The present invention relates to an insulated heat transfer structure and a method for manufacturing the same, and in particular, between an electronic component such as a semiconductor chip and a heating element such as a circuit board on which the electronic component is mounted and a heat sink such as a heat sink and a heat block. The present invention relates to an insulated heat transfer structure to be mounted and a power module substrate including the same.

従来、図１６に示すように、ＤＢＡ（Ａｌ／ＡｌＮ／Ａｌ）、ＤＢＣ（Ｃｕ／ＡｌＮ／Ｃｕ）などからなる絶縁基板１０１の一方の面にハンダ層１０２を介して半導体チップなどの電子部品１０３を実装し、絶縁基板１０１の他方の面にハンダ層１０２を介してＡｌＳｉＣ、Ｃｕ／Ｍｏ／Ｃｕなどからなる放熱板１０４を接合し、放熱板１０４に熱伝導グリース層１０５を介してＡｌ、Ｃｕからなるヒートシンク１０６を接合したパワーモジュール用基板１００が知られている。   Conventionally, as shown in FIG. 16, an electronic component 103 such as a semiconductor chip is provided on one surface of an insulating substrate 101 made of DBA (Al / AlN / Al), DBC (Cu / AlN / Cu), etc. via a solder layer 102. A heat sink 104 made of AlSiC, Cu / Mo / Cu, or the like is bonded to the other surface of the insulating substrate 101 via a solder layer 102, and Al, Cu is bonded to the heat sink 104 via a thermal conductive grease layer 105. There is known a power module substrate 100 to which a heat sink 106 made of the above is joined.

このような構成のパワーモジュール用基板１００にあっては、半導体チップなどの電子部品１０３から発生する熱を放熱板１０４を介してヒートシンク１０６に伝達させて放散させることにより、半導体チップなどの電子部品１０３に作用する熱負荷を軽減させることができるものである。   In the power module substrate 100 having such a configuration, the heat generated from the electronic component 103 such as a semiconductor chip is transmitted to the heat sink 106 through the heat radiating plate 104 and dissipated to dissipate the electronic component such as the semiconductor chip. The thermal load acting on 103 can be reduced.

ところで、上記のような構成のパワーモジュール用基板１００ａにあっては、放熱板１０４とヒートシンク１０６との間に熱伝導グリース層１０５を介装させて熱伝導性を高めているが、熱伝導グリース層１０５では熱抵抗を充分に低減させることができず、半導体チップなどの電子部品１０３の熱を効率良く伝導させて放散させることができない。   By the way, in the power module substrate 100a configured as described above, the thermal conductivity grease layer 105 is interposed between the heat radiating plate 104 and the heat sink 106 to enhance the thermal conductivity. The layer 105 cannot sufficiently reduce the thermal resistance, and cannot efficiently conduct and dissipate heat of the electronic component 103 such as a semiconductor chip.

一方、上記のような問題に対処するため、図１７及び図１８に示すように、絶縁基板１０１と放熱板１０４との間、及び放熱板１０４とヒートシンク１０６との間をロウ付け層１０７を介して接合することにより、熱抵抗を低減させるように構成したパワーモジュール用基板１００ｂ、１００ｃが知られている。   On the other hand, in order to deal with the above problems, as shown in FIGS. 17 and 18, a brazing layer 107 is interposed between the insulating substrate 101 and the heat sink 104 and between the heat sink 104 and the heat sink 106. Power module substrates 100b and 100c configured to reduce thermal resistance by bonding together are known.

しかし、絶縁基板１０１の熱膨張率（７×１０−６／Ｋ）、放熱板１０４の熱膨張率（１０〜１５×１０−６／Ｋ）、及びヒートシンク１０６の熱膨張率（Ａｌ：２３×１０−６／Ｋ、Ｃｕ：１５〜１６×１０−６／Ｋ）がそれぞれ異なることから、ロウ付け作業後の冷却過程、実使用時の温度サイクルなどによる熱変形によって、絶縁基板１０１と放熱板１０４との間及び、放熱体とヒートシンクとの間に剥離、亀裂などが生じてしまう。
特開平１−２８６３４８号公報 However, the thermal expansion coefficient of the insulating substrate 101 (7 × 10 −6 / K), the thermal expansion coefficient of the heat sink 104 (10 to 15 × 10 −6 / K), and the thermal expansion coefficient of the heat sink 106 (Al: 23 × 10 −6 / K, Cu: 15 to 16 × 10 −6 / K) are different from each other, so that the insulating substrate 101 and the heat sink are affected by thermal deformation due to a cooling process after brazing operation, a temperature cycle during actual use, and the like. Peeling, cracking, etc. will occur between the heat sink 104 and between the radiator and the heat sink.
JP-A-1-286348

本発明は、上記のような従来の問題に鑑みなされたもので、発熱体側の熱を効率よく放熱体側に伝導させて放熱することができると共に、温度サイクルなどの作用によって熱変形を受けても、安定した性能を長期にわたって発揮することができる絶縁伝熱構造体及びパワーモジュール用基板を提供することを目的とする。   The present invention has been made in view of the above-described conventional problems, and can efficiently conduct heat from the heat-generating body side to the heat-dissipating body side to dissipate heat, and can be subjected to thermal deformation by an action such as a temperature cycle. An object of the present invention is to provide an insulating heat transfer structure and a power module substrate that can exhibit stable performance over a long period of time.

本発明は、前記課題を解決するために以下の構成を採用した。すなわち、本発明の絶縁伝熱構造体は、絶縁体層と、該絶縁体層の両側に配置され、熱伝導率が１５０Ｗ／ｍＫ以上である高熱伝導体層とを備え、前記絶縁体層が、前記高熱伝導体層よりも熱伝導率が低いポリイミドからなる接合層と、前記接合層よりも熱伝導率が高く、熱伝導率が１５０Ｗ／ｍＫ以上とされ、かつ前記高熱伝導体層よりも硬度が高い前記高熱伝導体層に突き出されているダイヤモンド粒子からなる絶縁性高熱伝導硬質粒子とを有する絶縁伝熱構造体において、前記高熱伝導体層と前記絶縁体層との界面における前記絶縁性高熱伝導硬質粒子の投影面積が、前記界面の面積の２０％以上６０％以下であり、前記高熱伝導体層の一方に、半導体チップを搭載するための回路が形成されていることを特徴とする。 The present invention employs the following configuration in order to solve the above problems. That is, the insulated heat transfer structure of the present invention includes an insulator layer and a high thermal conductor layer that is disposed on both sides of the insulator layer and has a thermal conductivity of 150 W / mK or more. , a bonding layer thermal conductivity than the high thermal conductive layer is made of a low polyimide, the bonding layer thermal conductivity rather higher than the thermal conductivity is a 150 W / mK or more, and from the high thermal conductive layer Insulating heat transfer structure having insulating high heat conductive hard particles made of diamond particles protruding to the high heat conductor layer having high hardness, wherein the insulation at the interface between the high heat conductor layer and the insulator layer The projected area of the conductive high heat conductive hard particles is 20% to 60% of the area of the interface, and a circuit for mounting a semiconductor chip is formed on one of the high heat conductor layers. To do.

この発明によれば、一方の高熱伝導体層と他方の高熱伝導体層とが絶縁性高熱伝導硬質粒子によって連通されているので、絶縁体層の絶縁性高熱伝導硬質粒子を介して一方の高熱伝導体層からの熱が、他方の高熱伝導体層に伝導され、他方の高熱伝導体層で放散される。ここで、高熱伝導体層と絶縁体層との界面における絶縁性高熱伝導硬質粒子の投影面積が界面の面積の２０％以上６０％以下であることで、絶縁性高熱伝導硬質粒子が高熱伝導体層内に十分に突き出され、絶縁性高熱伝導硬質粒子と高熱伝導体層とが良好に接触していることとなる。これにより、十分な熱伝導率が得られると共に、絶縁性高熱伝導硬質粒子の密度が高過ぎることで接合層と絶縁性高熱伝導硬質粒子との間に空隙が生じて絶縁耐圧が低下することを回避する。したがって、温度サイクルなどの作用によって熱変形を受けても、安定した性能を長期にわたって発揮することができる。
なお、本発明において、投影面積とは高熱伝導体層と絶縁体層との界面で切断した面のうち、絶縁性高熱伝導硬質粒子の占める面積を示している。ここで、投影面積の測定方法は、絶縁伝熱構造体の高熱伝導体層を塩化第二鉄などを用いたエッチングにより除去した後、表面をＳＥＭ（走査型電子顕微鏡）や光学顕微鏡などにより撮影し、撮影した画像の面積に対する絶縁性高熱伝導硬質粒子の占める面積を画像処理などによって求めることによって行っている。
ここで、回路上に半導体チップを搭載すると、この半導体チップで発生した熱を、半導体チップが搭載された一方の高熱伝導体層から他方の高熱伝導体層に伝導する。 According to the present invention, since one high heat conductor layer and the other high heat conductor layer are communicated with each other by the insulating high heat conductive hard particles, the one high heat conductor layer is connected via the insulating high heat conductive hard particles of the insulator layer. Heat from the conductor layer is conducted to the other high thermal conductor layer and dissipated in the other high thermal conductor layer. Here, the projected area of the insulating high heat conductive hard particles at the interface between the high heat conductive layer and the insulator layer is 20% or more and 60% or less of the area of the interface, so that the insulating high heat conductive hard particles are the high heat conductor. The insulating high heat conduction hard particles and the high heat conductor layer are in good contact with each other and sufficiently protrude into the layer. As a result, sufficient thermal conductivity can be obtained, and when the density of the insulating high heat conductive hard particles is too high, voids are generated between the bonding layer and the insulating high heat conductive hard particles, and the withstand voltage is reduced. To avoid. Therefore, stable performance can be exhibited over a long period of time even when subjected to thermal deformation by an action such as a temperature cycle.
In the present invention, the projected area indicates the area occupied by the insulating high heat conductive hard particles in the surface cut at the interface between the high heat conductive layer and the insulator layer. Here, the projected area is measured by removing the high heat conductor layer of the insulating heat transfer structure by etching using ferric chloride and then photographing the surface with a scanning electron microscope (SEM) or an optical microscope. The area occupied by the insulating high thermal conductive hard particles with respect to the area of the photographed image is obtained by image processing or the like.
Here, when a semiconductor chip is mounted on the circuit, heat generated in the semiconductor chip is conducted from one high thermal conductor layer on which the semiconductor chip is mounted to the other high thermal conductor layer.

また、本発明の絶縁伝熱構造体は、前記絶縁性高熱伝導硬質粒子のうち、７０質量％以上が切頭八面体形状を有するダイヤモンド粒子によって構成されていることが好ましい。
この発明によれば、絶縁性高熱伝導硬質粒子が切頭八面体形状を有するダイヤモンド粒子を含有することで、ダイヤモンド粒子の（１００）面または（１１１）面が高熱伝導体層と対向するように配置されやすくなる。これにより、ダイヤモンド粒子が高熱伝導体層に対して十分に突き出させることができる。したがって、一方の高熱伝導体層から他方の高熱伝導体層への熱伝導がより効率よく行われる。また、低熱膨張係数でかつ熱伝導率の高いダイヤモンドを用いることで、絶縁体層と一方の高熱伝導体層とを合わせた熱膨張係数を小さくでき、かつ絶縁体層の両側に配置された高熱伝導体層間で良好に熱を伝達することができる。 In the insulated heat transfer structure of the present invention, it is preferable that 70% by mass or more of the insulating high heat conductive hard particles is constituted by diamond particles having a truncated octahedral shape.
According to this invention, the insulating high heat conductive hard particles contain the diamond particles having a truncated octahedral shape so that the (100) face or the (111) face of the diamond particles faces the high heat conductor layer. It becomes easy to arrange. Thereby, diamond particles can be sufficiently protruded from the high thermal conductor layer. Therefore, heat conduction from one high thermal conductor layer to the other high thermal conductor layer is performed more efficiently. In addition, by using diamond having a low thermal expansion coefficient and high thermal conductivity, the thermal expansion coefficient of the insulator layer and one high thermal conductor layer can be reduced, and the high heat disposed on both sides of the insulator layer can be reduced. Heat can be transferred well between conductor layers.

また、本発明の絶縁伝熱構造体は、前記絶縁性高熱伝導硬質粒子の粒径が、５０μｍ以上５００μｍ以下であることが好ましい。
この発明によれば、絶縁性高熱伝導硬質粒子の粒径を５０μｍ以上とすることで、高熱伝導体層間の耐電圧特性の劣化を防止して高熱伝導体層間の絶縁性を維持することができる。また、絶縁性高熱伝導硬質粒子の粒径を５００μｍ以下とすることで、絶縁性高熱伝導硬質粒子のコストを低減し、絶縁伝熱構造体の製造コストが増大することを防止すると共に、接合層が厚くなることで全体の熱膨張率が増大し、高熱伝導体層の上面にハンダ層を介して半導体チップなどを搭載したときにハンダ層にクラックが発生することを抑制する。
なお、絶縁性高熱伝導硬質粒子の粒径は、１００μｍ以上３００μｍ以下であることがより好ましい。このようにすることで、より高熱伝導体層間の耐電圧特性の劣化を防止すると共に、絶縁伝熱構造体の製造コストの増大を防止することやハンダ層にクラックが発生することができる。 In the insulated heat transfer structure of the present invention, the insulating high heat conductive hard particles preferably have a particle size of 50 μm or more and 500 μm or less.
According to the present invention, by setting the particle diameter of the insulating high heat conductive hard particles to 50 μm or more, it is possible to prevent the deterioration of the withstand voltage characteristics between the high heat conductor layers and maintain the insulation between the high heat conductor layers. . Further, by making the particle size of the insulating high heat conductive hard particles 500 μm or less, the cost of the insulating high heat conductive hard particles is reduced, and the manufacturing cost of the insulating heat transfer structure is prevented from increasing, and the bonding layer By increasing the thickness, the overall thermal expansion coefficient increases, and cracks are prevented from occurring in the solder layer when a semiconductor chip or the like is mounted on the upper surface of the high thermal conductor layer via the solder layer.
In addition, the particle diameter of the insulating high heat conductive hard particles is more preferably 100 μm or more and 300 μm or less. By doing in this way, while preventing the withstand voltage characteristic deterioration between higher heat conductor layers, the manufacturing cost of an insulated heat-transfer structure can be prevented, and a crack can occur in a solder layer.

また、本発明の絶縁伝熱構造体は、前記高熱伝導体層が、Ａｌ、Ｃｕ、ＡｇまたはＡｕによって形成されていることが好ましい。
この発明によれば、Ａｌ、Ｃｕ、ＡｇまたはＡｕの熱伝導率が高いことから、発熱体の熱が良好に伝達されることになる。また、Ａｌは、歪み量に対する変形応力が小さく、熱サイクルによる熱硬化が少ないことから、信頼性が向上する。 In the insulated heat transfer structure of the present invention, the high thermal conductor layer is preferably formed of Al, Cu, Ag, or Au.
According to the present invention, since the thermal conductivity of Al, Cu, Ag, or Au is high, the heat of the heating element is transferred well. In addition, Al has a small deformation stress with respect to the strain amount and is less hardened by a thermal cycle, so that reliability is improved.

また、本発明の絶縁伝熱構造体は、前記高熱伝導体層の一方に、半導体チップを搭載するための回路が形成されていることが好ましい。
この発明によれば、回路上に半導体チップを搭載して、この半導体チップで発生した熱を、半導体チップが搭載された一方の高熱伝導体層から他方の高熱伝導体層に伝導する。 In the insulated heat transfer structure of the present invention, it is preferable that a circuit for mounting a semiconductor chip is formed on one of the high thermal conductor layers.
According to the present invention, a semiconductor chip is mounted on a circuit, and heat generated in the semiconductor chip is conducted from one high thermal conductor layer on which the semiconductor chip is mounted to the other high thermal conductor layer.

また、本発明の絶縁伝熱構造体は、前記分割して形成された高熱伝導体層のうちの１つの厚みが、前記分割して形成された高熱伝導体層のうちの他の少なくとも１つの厚みと異なることが好ましい。
この発明によれば、高熱伝導体層の１つに半導体チップを搭載して、他の高熱伝導体層とこの半導体チップの電極をワイヤなどで接続し、電子回路として使用することができる。 In addition, the insulated heat transfer structure of the present invention has a thickness of one of the high heat conductor layers formed by dividing the at least one of the high heat conductor layers formed by dividing . It is preferable that the thickness is different.
According to the present invention, a semiconductor chip is mounted on one of the high thermal conductor layers, and the other high thermal conductor layer and the electrode of the semiconductor chip are connected by the wire or the like, and can be used as an electronic circuit.

また、本発明の絶縁伝熱構造体は、前記分割して形成された高熱伝導体層のうちの１つの厚みが、他の前記高熱伝導体層のうちの少なくとも１つの厚みと異なることが好ましい。
この発明によれば、分割形成された高熱伝導体層の厚みを適宜変更することで、過渡熱を抑制することができる。 In the insulated heat transfer structure of the present invention, it is preferable that the thickness of one of the high heat conductor layers formed by division is different from the thickness of at least one of the other high heat conductor layers. .
According to this invention, transient heat can be suppressed by appropriately changing the thickness of the separately formed high thermal conductor layer.

また、本発明の絶縁伝熱構造体は、前記回路が形成された高熱伝導体層の表面が、ニッケルメッキ層によって被覆されていることが好ましい。
この発明によれば、ニッケルメッキ層によってハンダとの良好な接合性が得られるので、高い放熱性を維持することができる。したがって、製品寿命が向上する。 In the insulated heat transfer structure of the present invention, the surface of the high thermal conductor layer on which the circuit is formed is preferably covered with a nickel plating layer.
According to the present invention, since the nickel plating layer provides good bondability with solder, high heat dissipation can be maintained. Therefore, the product life is improved.

また、本発明の絶縁伝熱構造体は、他方の前記高熱伝導体層が、放熱体であることが好ましい。
この発明によれば、放熱体によって効率よく放熱することができる。 In the insulated heat transfer structure of the present invention, the other high thermal conductor layer is preferably a heat radiating body.
According to the present invention, heat can be efficiently radiated by the heat radiating body.

また、本発明の絶縁伝熱構造体は、前記一方の高熱伝導体層の少なくとも一部に、他の電子回路と接続される端子構造が形成されていることが好ましい。
この発明によれば、端子構造を介して他の電子回路などと接続される。 In the insulated heat transfer structure of the present invention, it is preferable that a terminal structure connected to another electronic circuit is formed on at least a part of the one high thermal conductor layer.
According to this invention, it connects with another electronic circuit etc. via a terminal structure.

また、本発明のパワーモジュール用基板は、上記記載の絶縁伝熱構造体の前記回路が形成された一方の高熱伝導体層の上面に半導体チップが設けられたことを特徴とする。
この発明によれば、半導体チップの生じる熱が絶縁伝熱構造体を介して放熱され、使用時に熱サイクルが生じたとしても、高熱伝導体層と絶縁体層との間に剥離や亀裂が生じない。 The power module substrate of the present invention is characterized in that a semiconductor chip is provided on the upper surface of one high thermal conductor layer on which the circuit of the above-described insulated heat transfer structure is formed .
According to this invention, even if heat generated by the semiconductor chip is dissipated through the insulating heat transfer structure and a thermal cycle occurs during use, peeling or cracking occurs between the high thermal conductor layer and the insulator layer. Absent.

また、本発明のパワーモジュール用基板は、他方の前記高熱伝導体層の下面に放熱板が接合されていることが好ましい。
この発明によれば、上述と同様に、高熱伝導体層と絶縁体層との間に剥離や亀裂が生じない。また、半導体チップの生じる熱が伝導されたときに、より効率よく放熱することができる。 Moreover, the power module substrate of the present invention, it is preferable that the heat radiating plate is bonded to the lower surface of the high thermal conductive layer of the other hand.
According to the present invention, as described above, no peeling or cracking occurs between the high thermal conductor layer and the insulator layer. Further, when heat generated by the semiconductor chip is conducted, heat can be radiated more efficiently.

また、本発明のパワーモジュール用基板は、当該パワーモジュール用基板の下面にヒートシンクが設けられていることが好ましい。
この発明によれば、絶縁伝熱構造体をヒートシンクに対して付勢することで、絶縁伝熱構造体とヒートシンクとの接触が良好となるので、半導体チップに生じる熱をより効率よく伝達させることができる。 In the power module substrate of the present invention, it is preferable that a heat sink is provided on the lower surface of the power module substrate .
According to this invention, since the contact between the insulated heat transfer structure and the heat sink is improved by urging the insulated heat transfer structure against the heat sink, heat generated in the semiconductor chip can be more efficiently transferred. Can do.

また、本発明のパワーモジュール用基板は、前記絶縁伝熱構造体を前記ヒートシンクに対して付勢させる付勢部材を備えることが好ましい。
この発明によれば、絶縁伝熱構造体をヒートシンクに対して付勢することで、絶縁伝熱構造体とヒートシンクとの接触が良好となるので、半導体チップに生じる熱をより効率よく伝達させることができる。 Moreover, it is preferable that the board | substrate for power modules of this invention is provided with the urging member which urges | biases the said insulated heat-transfer structure with respect to the said heat sink.
According to this invention, since the contact between the insulated heat transfer structure and the heat sink is improved by urging the insulated heat transfer structure against the heat sink, heat generated in the semiconductor chip can be more efficiently transferred. Can do.

この発明にかかる絶縁伝熱構造体及びパワーモジュール用基板によれば、高熱伝導体層と絶縁体層との界面における絶縁性高熱伝導硬質粒子の投影面積が、界面の面積の２０％以上６０％以下であることで、絶縁性高熱伝導硬質粒子が高熱伝導体層内に十分に突き出されると共に絶縁性高熱伝導硬質粒子と高熱伝導体層とが十分に接触していることとなる。これにより、一方の高熱伝導体層から他方の高熱伝導体層への熱の伝導が効率よく行われる。   According to the insulated heat transfer structure and the power module substrate according to the present invention, the projected area of the insulating high heat conductive hard particles at the interface between the high heat conductor layer and the insulator layer is 20% or more and 60% of the interface area. By being the following, the insulating high heat conductive hard particles are sufficiently protruded into the high heat conductive layer, and the insulating high heat conductive hard particles are sufficiently in contact with the high heat conductive layer. Thereby, conduction of heat from one high thermal conductor layer to the other high thermal conductor layer is efficiently performed.

以下、本発明にかかる絶縁伝熱構造体の第１の実施形態を図面に基づいて説明する。
本実施形態による絶縁伝熱構造体１は、図１に示すように、絶縁体層２と、絶縁体層２の両側に配置される高熱伝導体層３、４とを備えている。
なお、本明細書において、絶縁伝熱構造体１を構成する絶縁体層２及び高熱伝導体層３、４の積層方向のうち高熱伝導体層３側（図１に示す上側）を上方とし、高熱伝導体層４側（図１に示す下側）を下方とする。 Hereinafter, a first embodiment of an insulated heat transfer structure according to the present invention will be described with reference to the drawings.
As shown in FIG. 1, the insulated heat transfer structure 1 according to the present embodiment includes an insulator layer 2 and high thermal conductor layers 3 and 4 disposed on both sides of the insulator layer 2.
In the present specification, the high heat conductor layer 3 side (the upper side shown in FIG. 1) of the insulating layer 2 and the high heat conductor layers 3 and 4 constituting the insulating heat transfer structure 1 is the upper side, The high thermal conductor layer 4 side (the lower side shown in FIG. 1) is the lower side.

絶縁体層２は、高熱伝導体層３、４間を一体に接続する絶縁性及び耐熱性を有する接合層５と、接合層５に混入または貼着される絶縁性、高熱伝導性及び硬質性を有するダイヤモンド粒子（絶縁性高熱伝導硬質粒子）６とによって構成され、ダイヤモンド粒子６の高熱伝導体層３、４側に位置している部分が、高熱伝導体層３、４内に突き出されている。   The insulating layer 2 includes an insulating layer and a heat-resistant bonding layer 5 that integrally connect the high thermal conductor layers 3 and 4, and an insulating property, a high thermal conductivity, and a hard property mixed or stuck in the bonding layer 5. The diamond particles 6 (insulating high heat conduction hard particles) 6 and the portions of the diamond particles 6 located on the high heat conductor layers 3 and 4 are protruded into the high heat conductor layers 3 and 4. Yes.

接合層５は、厚さ７０μｍのポリイミド製の両面粘着テープによって構成されており、絶縁抵抗が１０１０Ω・ｃｍ以上、融点が４５０〜６００℃（連続使用温度２５０℃以上に耐えることが可能な温度（ハンダの融点温度以上））となっている。なお、接合層５の厚さは、ダイヤモンド粒子６の粒径や所望する絶縁耐圧の値によって適宜変更してもよい。 The bonding layer 5 is composed of a double-sided adhesive tape made of polyimide having a thickness of 70 μm, having an insulation resistance of 10 10 Ω · cm or more and a melting point of 450 to 600 ° C. (can withstand a continuous use temperature of 250 ° C. or more). Temperature (above the melting point temperature of the solder). Note that the thickness of the bonding layer 5 may be changed as appropriate depending on the particle diameter of the diamond particles 6 and the desired dielectric strength value.

ダイヤモンド粒子６は、絶縁抵抗が接合層５と同様に１０１０Ω・ｃｍ以上、熱伝導率がＡｌ２Ｏ３より高い１５０Ｗ／ｍＫ以上であると共に硬度が高熱伝導体層３、４の硬さの１０倍以上（高熱伝導体層３、４をＨｖ５０〜１００の純金属で構成した場合にはＨｖ５００〜１０００の硬さ）である。また、ダイヤモンド粒子６は、その粒径が１００μｍ以上３００μｍ以下であると共に平均粒径が２００μｍとなっており、図２に示す切頭八面体形状を有している。 The diamond particles 6 have an insulation resistance of 10 10 Ω · cm or more as in the bonding layer 5, a thermal conductivity of 150 W / mK or more higher than that of Al 2 O 3 , and a hardness of the high thermal conductor layers 3 and 4. 10 times or more (when the high thermal conductor layers 3 and 4 are made of pure metal of Hv 50 to 100, the hardness is Hv 500 to 1000). The diamond particles 6 have a particle size of 100 μm or more and 300 μm or less and an average particle size of 200 μm, and have a truncated octahedron shape shown in FIG.

このダイヤモンド粒子６は、絶縁体層２の両側に高熱伝導体層３、４を配置し、高熱伝導体層３、４を熱間圧着したときに、高熱伝導体層３、４側に位置している部分が高熱伝導体層３、４内に突き出される。このとき、ダイヤモンド粒子６が切頭八面体形状を有することで、その（１００）面（図２に示す面Ａ）または（１１１）面（図２に示す面Ｂ）が高熱伝導体層３、４と対向するように配置される。また、高熱伝導体層３、４と絶縁体層２との界面におけるダイヤモンド粒子６の投影面積が、界面の面積の２０％以上６０％以下となっており、ダイヤモンド粒子６と高熱伝導体層３、４との接触面積が、界面の面積の３０％以上９０％以下となっている。
ここで、本明細書において、投影面積とは高熱伝導体層３、４と絶縁体層２との界面で切断した面のうち、ダイヤモンド粒子６の占める面積を示している。また、投影面積の測定方法は、絶縁伝熱構造体１の高熱伝導体層３、４を塩化第二鉄などを用いたエッチングにより除去した後、表面をＳＥＭや光学顕微鏡などにより撮影し、撮影した画像の面積に対するダイヤモンド粒子６の占める面積を画像処理などによって求めることによって行っている。 The diamond particles 6 are located on the high thermal conductor layers 3 and 4 side when the high thermal conductor layers 3 and 4 are disposed on both sides of the insulator layer 2 and the high thermal conductor layers 3 and 4 are hot-pressed. The protruding portion is protruded into the high thermal conductor layers 3 and 4. At this time, since the diamond particle 6 has a truncated octahedral shape, the (100) plane (plane A shown in FIG. 2) or the (111) plane (plane B shown in FIG. 2) is the high thermal conductor layer 3, 4 is arranged so as to face 4. Further, the projected area of the diamond particles 6 at the interface between the high thermal conductor layers 3 and 4 and the insulator layer 2 is 20% or more and 60% or less of the area of the interface, and the diamond particles 6 and the high thermal conductor layer 3. 4 is 30% or more and 90% or less of the interface area.
Here, in this specification, the projected area indicates the area occupied by the diamond particles 6 in the plane cut at the interface between the high thermal conductor layers 3, 4 and the insulator layer 2. The projected area is measured by removing the high thermal conductor layers 3 and 4 of the insulating heat transfer structure 1 by etching using ferric chloride and then photographing the surface with an SEM or an optical microscope. The area occupied by the diamond particles 6 with respect to the area of the obtained image is obtained by image processing or the like.

高熱伝導体層３、４は、それぞれ電気伝導性を有するＡｌの薄板によって構成されている。この高熱伝導体層３、４は、熱伝導率が５０Ｗ／ｍＫ以上、好ましくは１５０Ｗ／ｍＫ以上の金属を材料として薄板状などに形成されている。また、高熱伝導体層３、４は、絶縁体層２の両側に位置した状態でプレスなどによって加圧することにより、絶縁体層２の両側に積層された状態で配置される。この高熱伝導体層３、４は、ダイヤモンド粒子６よりも軟らかい材料によって形成されており、絶縁体層２と対向する面にダイヤモンド粒子６の一部が突き出されている。   The high thermal conductor layers 3 and 4 are each made of an Al thin plate having electrical conductivity. The high thermal conductor layers 3 and 4 are formed in a thin plate or the like using a metal having a thermal conductivity of 50 W / mK or more, preferably 150 W / mK or more. Further, the high thermal conductor layers 3 and 4 are arranged in a state of being laminated on both sides of the insulator layer 2 by being pressed by a press or the like while being located on both sides of the insulator layer 2. The high thermal conductor layers 3 and 4 are made of a material softer than the diamond particles 6, and a part of the diamond particles 6 protrudes from the surface facing the insulator layer 2.

次に、上述した構成の絶縁伝熱構造体１の製造方法について説明する。まず、図３に示すように、ポリイミド製の両面粘着テープからなる接合層５の両面に所定量のダイヤモンドのダイヤモンド粒子６を貼着して絶縁体層２を構成する。
次に、絶縁体層２の両側にＡｌ（９９．９９％）製の薄板からなる高熱伝導体層３、４を配置し、この状態でプレスなどにより矢印方向から両高熱伝導体層３、４を、例えば１８０℃に加熱した熱間圧延することで、両高熱伝導体層３、４の間に接合層５を介在させた状態で一体に接合する。
このとき、ダイヤモンド粒子６が切頭八面体形状を有しているため、この切頭八面体のダイヤモンドの平面である（１００）面または（１１１）面が高熱伝導体層３、４と対向するようになる。そして、この状態で高熱伝導体層３、４内に突き出させる。
以上のようにして、図４に示すように、絶縁体層２の両側に高熱伝導体層３、４を積層した状態で配置した絶縁伝熱構造体１が製造される。
また、ダイヤモンド粒子６の表面をＣｕメッキまたはＮｉメッキで被覆し、ダイヤモンド粒子６と高熱伝導体層３、４との接合性を高めてもよい。 Next, a method for manufacturing the insulated heat transfer structure 1 having the above-described configuration will be described. First, as shown in FIG. 3, a predetermined amount of diamond diamond particles 6 are adhered to both surfaces of a bonding layer 5 made of a double-sided adhesive tape made of polyimide to constitute the insulator layer 2.
Next, the high thermal conductor layers 3 and 4 made of a thin plate made of Al (99.99%) are arranged on both sides of the insulator layer 2, and in this state, both the high thermal conductor layers 3 and 4 are pressed from the direction of the arrow by pressing or the like. For example, by hot rolling heated to 180 ° C., the high heat conductor layers 3 and 4 are joined together with the joining layer 5 interposed therebetween.
At this time, since the diamond particle 6 has a truncated octahedron shape, the (100) plane or the (111) plane which is the plane of the diamond of the truncated octahedron faces the high thermal conductor layers 3 and 4. It becomes like this. And it protrudes in the high heat conductor layers 3 and 4 in this state.
As described above, as shown in FIG. 4, the insulating heat transfer structure 1 is manufactured in which the high heat conductor layers 3 and 4 are laminated on both sides of the insulator layer 2.
Further, the surface of the diamond particles 6 may be coated with Cu plating or Ni plating to enhance the bonding property between the diamond particles 6 and the high thermal conductor layers 3 and 4.

そして、上述のように構成した絶縁伝熱構造体１の一方の高熱伝導体層３を発熱体側として使用し、他方の高熱伝導体層４を放熱体側として使用することにより、一方の高熱伝導体層３側の熱が絶縁体層２のダイヤモンド粒子６を介して他方の高熱伝導体層４側に伝導されて放散されることになる。   And one high heat conductor layer 3 of the insulated heat transfer structure 1 comprised as mentioned above is used as a heat generating body side, and one high heat conductor is used as the other high heat conductor layer 4 as a heat radiator side. The heat on the layer 3 side is conducted and dissipated through the diamond particles 6 of the insulator layer 2 to the other high thermal conductor layer 4 side.

このように構成された絶縁伝熱構造体１によれば、高熱伝導体層３、４と絶縁体層２との界面におけるダイヤモンド粒子６の投影面積が、界面の面積の２０％以上６０％以下であることで、ダイヤモンド粒子６が高熱伝導体層３、４内に十分に突き出してダイヤモンド粒子６と高熱伝導体層３、４とが十分に接触していることとなる。これにより、高熱伝導体層３、４間の熱の伝導が効率よく行われる。
ここで、ダイヤモンド粒子６が切頭八面体形状を有することで、平面となっている（１００）面または（１１１）面が、突き出す際に高熱伝導体層３、４と対向しやすくなる。これにより、ダイヤモンド粒子６が高熱伝導体層３、４に対して十分に突き出しやすくなる。 According to the insulating heat transfer structure 1 configured as described above, the projected area of the diamond particles 6 at the interface between the high thermal conductor layers 3 and 4 and the insulator layer 2 is 20% or more and 60% or less of the interface area. As a result, the diamond particles 6 sufficiently protrude into the high thermal conductor layers 3 and 4, and the diamond particles 6 and the high thermal conductor layers 3 and 4 are sufficiently in contact with each other. Thereby, heat conduction between the high thermal conductor layers 3 and 4 is efficiently performed.
Here, when the diamond particles 6 have a truncated octahedron shape, the (100) plane or the (111) plane that is a flat surface is likely to face the high thermal conductor layers 3 and 4 when protruding. As a result, the diamond particles 6 can sufficiently protrude from the high thermal conductor layers 3 and 4.

次に、第２の実施形態について図５を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第１の実施形態と同様であり、上述の第１の実施形態に別の要素を付加したものである。したがって、図５においては、図１と同一構成要素に同一符号を付し、この説明を省略する。
第２の実施形態におけるパワーモジュール用基板１０は、絶縁体層２の上面側に一方の高熱伝導体層３ａ、３ｂであるＡｌなどからなる回路層が分割して配置され、絶縁体層２の下面側に他方の高熱伝導体層４であるＡｌなどからなる薄板が配置されている。そして、これらを加熱、加圧することにより両高熱伝導体層３ａ、３ｂ、４を絶縁体層２の接合層５を介して一体的に接合し、絶縁体層２のダイヤモンド粒子６の一部を両高熱伝導体層３ａ、３ｂ、４内に突き出させた構成とされている。 Next, a second embodiment will be described with reference to FIG. The embodiment described here has the same basic configuration as the first embodiment described above, and is obtained by adding another element to the first embodiment described above. Therefore, in FIG. 5, the same components as those in FIG.
In the power module substrate 10 according to the second embodiment, a circuit layer made of Al, which is one of the high thermal conductor layers 3a and 3b, is divided and disposed on the upper surface side of the insulator layer 2. A thin plate made of Al or the like as the other high thermal conductor layer 4 is disposed on the lower surface side. And by heating and pressurizing these, both the high thermal conductor layers 3a, 3b, and 4 are integrally joined through the joining layer 5 of the insulating layer 2, and a part of the diamond particles 6 of the insulating layer 2 are joined. It is set as the structure protruded in both the high heat conductor layers 3a, 3b, and 4. FIG.

このように構成されたパワーモジュール用基板１０によれば、上述した第１の実施形態と同様に、高熱伝導体層３ａ、３ｂ、４間の熱の伝導が効率よく行われる。   According to the power module substrate 10 configured in this manner, heat conduction between the high thermal conductor layers 3a, 3b, and 4 is efficiently performed as in the first embodiment described above.

次に、第３の実施形態について図６を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第２の実施形態と同様であり、上述の第２の実施形態に別の要素を付加したものである。したがって、図６においては、図５と同一構成要素に同一符号を付し、この説明を省略する。
第３の実施形態におけるパワーモジュール用基板１５は、高熱伝導体層３ａ、３ｂ及び高熱伝導体層４の表面がニッケルメッキ層（以下、Ｎｉメッキ層と省略する）１６で被覆されている。 Next, a third embodiment will be described with reference to FIG. The embodiment described here has the same basic configuration as the second embodiment described above, and is obtained by adding another element to the second embodiment described above. Therefore, in FIG. 6, the same components as those in FIG.
In the power module substrate 15 in the third embodiment, the surfaces of the high thermal conductor layers 3 a and 3 b and the high thermal conductor layer 4 are covered with a nickel plating layer (hereinafter abbreviated as Ni plating layer) 16.

このように構成されたパワーモジュール用基板１５においても、上述した第２の実施形態と同様の作用、効果を有するが、高熱伝導体層３ａ、３ｂ及び高熱伝導体層４の表面をＮｉメッキ層１６で被覆することによって、ハンダを用いて他の部材と接合したときに、ハンダとの良好な接合性が得られるので、高い放熱性を維持することができる。したがって、製品寿命が向上する。   The power module substrate 15 thus configured also has the same operations and effects as those of the second embodiment described above, but the surfaces of the high thermal conductor layers 3a and 3b and the high thermal conductor layer 4 are Ni plated layers. By covering with 16, when joining with other members using solder, good joining property with solder can be obtained, so that high heat dissipation can be maintained. Therefore, the product life is improved.

次に、第４の実施形態について図７を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第２の実施形態と同様であり、上述の第２の実施形態に別の要素を付加したものである。したがって、図７においては、図５と同一構成要素に同一符号を付し、この説明を省略する。
第４の実施形態におけるパワーモジュール用基板２０は、一方の高熱伝導体層３ａ、３ｂとして互いに厚さの異なるＣｕ製のヒートブロックが配置され、他方の高熱伝導体層４としてＡｌなどからなる薄板が配置されている。 Next, a fourth embodiment will be described with reference to FIG. The embodiment described here has the same basic configuration as the second embodiment described above, and is obtained by adding another element to the second embodiment described above. Therefore, in FIG. 7, the same components as those in FIG.
In the power module substrate 20 in the fourth embodiment, Cu heat blocks having different thicknesses are arranged as one of the high thermal conductor layers 3a and 3b, and the other high thermal conductor layer 4 is a thin plate made of Al or the like. Is arranged.

このように構成されたパワーモジュール用基板２０によれば、上述した第２の実施形態と同様の作用、効果を有するが、分割形成された高熱伝導体層３ａ、３ｂの厚みを適宜変更することで、過渡熱を効率よく抑制することができる。   According to the power module substrate 20 configured as described above, the same effects and advantages as those of the second embodiment described above are obtained, but the thicknesses of the high thermal conductor layers 3a and 3b formed separately are appropriately changed. Thus, transient heat can be efficiently suppressed.

次に、第５の実施形態について図８を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第４の実施形態と同様であり、上述の第４の実施形態に別の要素を付加したものである。したがって、図８においては、図７と同一構成要素に同一符号を付し、この説明を省略する。
第４の実施形態におけるパワーモジュール用基板２５は、上述した第３の実施形態と同様に、高熱伝導体層３ａ、３ｂ及び高熱伝導体層４の表面がＮｉメッキ層１６で被覆されている。 Next, a fifth embodiment will be described with reference to FIG. The embodiment described here is similar in basic configuration to the above-described fourth embodiment, and is obtained by adding another element to the above-described fourth embodiment. Therefore, in FIG. 8, the same components as those in FIG.
In the power module substrate 25 according to the fourth embodiment, the surfaces of the high thermal conductor layers 3a and 3b and the high thermal conductor layer 4 are covered with the Ni plating layer 16 as in the third embodiment described above.

このように構成されたパワーモジュール用基板２５においても、上述した第４の実施形態と同様の作用、効果を有するが、高熱伝導体層３ａ、３ｂ及び高熱伝導体層４の表面をＮｉメッキ層１６で被覆することによって、上述した第３の実施形態と同様に、ハンダとの良好な接合性が得られるので、高い放熱性を維持することができる。したがって、製品寿命が向上する。   The power module substrate 25 configured in this way also has the same operations and effects as the fourth embodiment described above, but the surfaces of the high thermal conductor layers 3a and 3b and the high thermal conductor layer 4 are Ni plated layers. By covering with 16, similar to the above-described third embodiment, good bondability with the solder can be obtained, so that high heat dissipation can be maintained. Therefore, the product life is improved.

次に、第６の実施形態について図９を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第２の実施形態と同様であり、上述の第２の実施形態に別の要素を付加したものである。したがって、図９においては、図５と同一構成要素に同一符号を付し、この説明を省略する。
第６の実施形態におけるパワーモジュール用基板３０は、一方の高熱伝導体層３としてＣｕ製の回路層が配置され、他方の高熱伝導体層４としてＡｌ製のヒートブロックが配置されている。そして、高熱伝導体層３である回路層の表面にハンダ層３１を介して半導体チップ３２が実装されている。 Next, a sixth embodiment will be described with reference to FIG. The embodiment described here has the same basic configuration as the second embodiment described above, and is obtained by adding another element to the second embodiment described above. Therefore, in FIG. 9, the same components as those in FIG.
In the power module substrate 30 according to the sixth embodiment, a circuit layer made of Cu is arranged as one high thermal conductor layer 3, and a heat block made of Al is arranged as the other high thermal conductor layer 4. A semiconductor chip 32 is mounted on the surface of the circuit layer that is the high thermal conductor layer 3 via the solder layer 31.

このように構成されたパワーモジュール用基板３０によれば、上述した第２の実施形態と同様の作用、効果を有するが、高熱伝導体層４をヒートブロックとして構成することで、半導体チップ３２で生じた熱を高熱伝導体層４で効率よく放熱することができる。   According to the power module substrate 30 configured as described above, the same effect and effect as those of the second embodiment described above are obtained, but by configuring the high thermal conductor layer 4 as a heat block, the semiconductor chip 32 The generated heat can be efficiently radiated by the high thermal conductor layer 4.

次に、第７の実施形態について図１０を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第６の実施形態と同様であり、上述の第６の実施形態に別の要素を付加したものである。したがって、図１０においては、図９と同一構成要素に同一符号を付し、この説明を省略する。
第７の実施形態におけるパワーモジュール用基板３５は、一方の高熱伝導体層３としてＣｕ製の回路層が配置され、他方の高熱伝導体層４としてＡｌ製のヒートシンクが配置されている。 Next, a seventh embodiment will be described with reference to FIG. The embodiment described here is similar in basic configuration to the above-described sixth embodiment, and is obtained by adding another element to the above-described sixth embodiment. Therefore, in FIG. 10, the same components as those in FIG.
In the power module substrate 35 in the seventh embodiment, a Cu circuit layer is disposed as one high thermal conductor layer 3, and an Al heat sink is disposed as the other high thermal conductor layer 4.

このように構成されたパワーモジュール用基板３５によれば、上述した第６の実施形態と同様の作用、効果を有する。   According to the power module substrate 35 configured as described above, the same functions and effects as those of the above-described sixth embodiment are obtained.

次に、第８の実施形態について図１１を参照しながら説明する。ここで説明する実施形態は、その基本的構成が上述した第２の実施形態と同様であり、上述の第２の実施形態に別の要素を付加したものである。したがって、図１１においては、図５と同一構成要素に同一符号を付し、この説明を省略する。
第８の実施形態におけるパワーモジュール用基板４０は、一方の高熱伝導体層３ａ、３ｂの表面をＮｉメッキ層１６で被覆したＣｕ製の回路層が配置され、他方の高熱伝導体層４としてＡｌ製のヒートシンクが配置されている。 Next, an eighth embodiment will be described with reference to FIG. The basic configuration of the embodiment described here is the same as that of the above-described second embodiment, and another element is added to the above-described second embodiment. Therefore, in FIG. 11, the same components as those in FIG.
In the power module substrate 40 according to the eighth embodiment, a Cu circuit layer in which the surface of one of the high thermal conductor layers 3a and 3b is covered with the Ni plating layer 16 is arranged, and the other high thermal conductor layer 4 is made of Al. Made of heat sink.

このように構成されたパワーモジュール用基板４０においても、上述した第２の実施形態と同様の作用、効果を有するが、高熱伝導体層４としてＡｌ製のヒートシンクを配置することで、効率よく放熱することができる。   The power module substrate 40 thus configured also has the same operations and effects as those of the second embodiment described above. However, by disposing an Al heat sink as the high thermal conductor layer 4, heat can be efficiently radiated. can do.

次に、第９の実施形態について図１２を参照しながら説明する。ここで説明する実施形態は、その基本的構成が上述した第３の実施形態と同様であり、上述の第３の実施形態に別の要素を付加したものである。したがって、図１２においては、図６と同一構成要素に同一符号を付し、この説明を省略する。
第９の実施形態におけるパワーモジュール用基板４５は、一方の高熱伝導体層３ａ、３ｂとして表面をＮｉメッキ層１６で被覆したＣｕ製の回路層及びＣｕ製の端子部材が配置され、他方の高熱伝導体層４として表面がＮｉメッキ層１６で被覆されたＡｌなどからなる薄板が配置されている。 Next, a ninth embodiment will be described with reference to FIG. The basic configuration of the embodiment described here is the same as that of the above-described third embodiment, and another element is added to the above-described third embodiment. Therefore, in FIG. 12, the same components as those in FIG.
In the power module substrate 45 in the ninth embodiment, a Cu circuit layer and a Cu terminal member whose surfaces are covered with a Ni plating layer 16 are arranged as one high heat conductor layer 3a, 3b, and the other high heat conductor is disposed. A thin plate made of Al or the like whose surface is covered with a Ni plating layer 16 is disposed as the conductor layer 4.

このように構成されたパワーモジュール用基板４５においても、上述した第２の実施形態と同様の作用、効果を有するが、高熱伝導体層３ｂを端子構造とすることで、この端子構造を介して他の電子回路などと接続される。   The power module substrate 45 configured in this way also has the same operations and effects as the second embodiment described above, but the high thermal conductor layer 3b has a terminal structure. Connected to other electronic circuits.

次に、第１０の実施形態について図１３を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第３の実施形態と同様であり、上述の第３の実施形態に別の要素を付加したものである。したがって、図１３においては、図６と同一構成要素に同一符号を付し、この説明を省略する。
第１０の実施形態におけるパワーモジュール用基板５０は、一方の高熱伝導体層３ａ、３ｂとして表面をＮｉメッキ層１６で被覆したＣｕ製のヒートブロックが配置され、他方の高熱伝導体層４として表面をＮｉメッキ層１６で被覆したＡｌなどからなる薄板が配置されている。
高熱伝導体層３ａの表面には、ハンダ層３１を介して半導体チップ３２が実装されており、半導体チップ３２の表面と高熱伝導体層３ｂの表面とをＡｌワイヤ５１で接続されている。また、高熱伝導体層４の下面に放熱板５２が接合されている。 Next, a tenth embodiment will be described with reference to FIG. The embodiment described here is similar in basic configuration to the above-described third embodiment, and is obtained by adding another element to the above-described third embodiment. Therefore, in FIG. 13, the same components as those in FIG.
In the power module substrate 50 according to the tenth embodiment, a Cu heat block whose surface is covered with a Ni plating layer 16 is disposed as one of the high thermal conductor layers 3a and 3b, and the other high thermal conductor layer 4 is the surface. A thin plate made of Al or the like coated with a Ni plating layer 16 is disposed.
A semiconductor chip 32 is mounted on the surface of the high thermal conductor layer 3a via a solder layer 31, and the surface of the semiconductor chip 32 and the surface of the high thermal conductor layer 3b are connected by an Al wire 51. Further, a heat radiating plate 52 is joined to the lower surface of the high thermal conductor layer 4.

このように構成されたパワーモジュール用基板５０においても、上述した第３の実施形態と同様の作用、効果を有するが、半導体チップ３２と高熱伝導体層３ｂとがＡｌワイヤ５１によって電気的に接続されると共に、半導体チップ３２で生じた熱を高熱伝導体層４に効率よく伝導させて放熱板５２で効率よく放熱させる。   The power module substrate 50 thus configured also has the same operations and effects as those of the third embodiment described above, but the semiconductor chip 32 and the high thermal conductor layer 3b are electrically connected by the Al wire 51. At the same time, the heat generated in the semiconductor chip 32 is efficiently conducted to the high thermal conductor layer 4 and efficiently radiated by the heat radiating plate 52.

次に、第１１の実施形態について図１４を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第１０の実施形態と同様であり、上述の第１０の実施形態に別の要素を付加したものである。したがって、図１４においては、図１３と同一構成要素に同一符号を付し、この説明を省略する。
第１１の実施形態におけるパワーモジュール用基板５５は、放熱板５２の下面に熱伝導グリース層（図示略）を介在させた状態でネジ５６を用いてヒートシンク５７が取り付けられている。 Next, an eleventh embodiment will be described with reference to FIG. The basic configuration of the embodiment described here is the same as that of the tenth embodiment described above, and another element is added to the above-described tenth embodiment. Therefore, in FIG. 14, the same components as those in FIG.
In the power module substrate 55 in the eleventh embodiment, a heat sink 57 is attached using screws 56 in a state where a heat conductive grease layer (not shown) is interposed on the lower surface of the heat radiating plate 52.

このように構成されたパワーモジュール用基板５５においても、上述した第１０の実施形態と同様の作用、効果を有するが、半導体チップ３２で生じた熱を放熱板５２及びヒートシンク５７で効率よく放熱させる。   The power module substrate 55 configured as described above also has the same operations and effects as the tenth embodiment described above, but efficiently dissipates heat generated in the semiconductor chip 32 by the heat radiating plate 52 and the heat sink 57. .

次に、第１２の実施形態について図１５を参照しながら説明する。なお、ここで説明する実施形態は、その基本的構成が上述した第１０の実施形態と同様であり、上述の第１０の実施形態に別の要素を付加したものである。したがって、図１５においては、図１３と同一構成要素に同一符号を付し、この説明を省略する。
第１２の実施形態におけるパワーモジュール用基板６０は、上フランジ部６１ａ及び下フランジ部６１ｂを備える付勢部材６１を有している。この付勢部材６１は、上フランジ部６１ａを高熱伝導体層３ａ、３ｂの外縁部に当接させ、下フランジ部６１ｂをヒートシンク５７に当接させて高熱伝導体層４の下面に熱伝導グリース層（図示略）を介在させた状態でネジ６２を用いてヒートシンク５７に取り付けられている。 Next, a twelfth embodiment will be described with reference to FIG. The basic configuration of the embodiment described here is the same as that of the tenth embodiment described above, and another element is added to the above-described tenth embodiment. Therefore, in FIG. 15, the same components as those in FIG.
The power module substrate 60 in the twelfth embodiment includes an urging member 61 including an upper flange portion 61a and a lower flange portion 61b. The urging member 61 has the upper flange portion 61 a in contact with the outer edge portions of the high thermal conductor layers 3 a and 3 b, and the lower flange portion 61 b in contact with the heat sink 57 so that the lower surface of the high thermal conductor layer 4 is thermally conductive grease. It is attached to the heat sink 57 using screws 62 with a layer (not shown) interposed.

このように構成されたパワーモジュール用基板６０においても、上述した第１０の実施形態と同様の作用、効果を有するが、付勢部材６１によって高熱伝導体層４とヒートシンク５７との接触が良好となり、半導体チップ３２で生じた熱をヒートシンクで効率よく放熱させることができる。   The power module substrate 60 configured in this manner also has the same operations and effects as the tenth embodiment described above, but the urging member 61 makes the contact between the high thermal conductor layer 4 and the heat sink 57 good. The heat generated in the semiconductor chip 32 can be efficiently radiated by the heat sink.

以下の条件の絶縁伝熱構造体を、実施例により具体的に説明する。
すべて切頭八面体形状を有する粒径２５０μｍのダイヤモンド粒子を用い、絶縁伝熱構造体を製造した。ダイヤモンド粒子は、高熱伝導体層内に突き出ている。ここで、高熱伝導体層と絶縁体層との界面におけるダイヤモンド粒子の投影面積が、高熱伝導体層と絶縁体層との界面の面積の４７．９％となっており、ダイヤモンド粒子と高熱伝導体層との接触面積が７６．５％となっている。
このように構成された絶縁伝熱構造体を用いて、レーザフラッシュ法（ＪＩＳ Ｒ−１６１１準拠）により熱伝導率の測定を行った。この結果、絶縁伝熱構造体の熱伝導率が１５０Ｗであることを確認した。以上より、ダイヤモンド粒子と高熱伝導体層との接触面積が十分であるため、良好な熱伝導率を有することがよくわかる。 An insulating heat transfer structure under the following conditions will be specifically described with reference to examples.
An insulated heat transfer structure was manufactured using diamond particles having a truncated octahedron shape and having a particle diameter of 250 μm. Diamond particles protrude into the high thermal conductor layer. Here, the projected area of the diamond particles at the interface between the high thermal conductor layer and the insulator layer is 47.9% of the area of the interface between the high thermal conductor layer and the insulator layer. The contact area with the body layer is 76.5%.
Using the insulating heat transfer structure configured as described above, the thermal conductivity was measured by a laser flash method (based on JIS R-1611). As a result, it was confirmed that the thermal conductivity of the insulated heat transfer structure was 150 W. From the above, it can be clearly seen that the contact area between the diamond particles and the high thermal conductor layer is sufficient, and therefore the thermal conductivity is good.

なお、本発明は上記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることができる。
例えば、接合層は、絶縁抵抗が１０１０Ω・ｃｍ以上、融点が４５０〜６００℃であればよく、ポリイミド製の両面粘着テープに限らず、アクリル熱圧着テープやエポキシやポリイミド、ＰＢＩ（ポリベンズイミダゾール）、ＰＥＥＫ（ポリエーテルエーテルケトン）、ＰＡＩ（ポリアミドイミド）、各種の熱硬化性樹脂を用いてもよい。
ここで、接合層としてエポキシ樹脂層を用いる場合には、絶縁性高熱伝導硬質粒子の両側に高熱伝導体層を配置した後に、両高熱伝導体層にアンダーフィル法などによって溶融樹脂を充填して硬化させることによって製造する。 In addition, this invention is not limited to the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention.
For example, the bonding layer may have an insulation resistance of 10 10 Ω · cm or more and a melting point of 450 to 600 ° C., and is not limited to a double-sided adhesive tape made of polyimide, but also an acrylic thermocompression bonding tape, epoxy, polyimide, PBI (polybenz Imidazole), PEEK (polyetheretherketone), PAI (polyamideimide), and various thermosetting resins may be used.
Here, when an epoxy resin layer is used as the bonding layer, after placing the high thermal conductor layers on both sides of the insulating high thermal conductive hard particles, both the high thermal conductor layers are filled with a molten resin by an underfill method or the like. Manufactured by curing.

また、接合層として、ガラス相またはガラス相に結晶相もしくはセラミック粒子が分散した複合相を用いてもよい。接合層として用いられる材料は、連続使用温度２５０℃以上に耐え得る温度（はんだの融点温度以上）のガラス相またはガラス相に結晶相もしくはセラミック粒子が分散した複合相が好ましい。例えば、ガラス系としては、ＰｂＯ−Ｂ２Ｏ３系、Ｂｉ２Ｏ３−Ｂ２Ｏ３系、Ｐ２Ｏ５系、ＴｅＯ２系などの低軟化ガラス系が望ましく、分散するセラミック粒子としては、アルミナ、ジルコン、ムライト、チタニアなどの低熱膨張酸化物が望ましい。ここで、ガラス相またはガラス相に結晶相もしくはセラミック粒子が分散した複合相を用いた場合には、例えばガラス粉末もしくはガラスとセラミックスとの混合粉末をペースト化し、これをダイヤモンド粒子と共にＡｌ板上に塗布する。この上にＡｌ板を載置し、加圧した後、３００℃で加熱する脱脂処理を行う。さらに、４５０℃〜６００℃でガラスを流動させることによって製造する。 Further, as the bonding layer, a glass phase or a composite phase in which crystal phases or ceramic particles are dispersed in the glass phase may be used. The material used as the bonding layer is preferably a glass phase having a temperature that can withstand a continuous use temperature of 250 ° C. or higher (a melting point temperature of solder) or a composite phase in which crystal phases or ceramic particles are dispersed in the glass phase. For example, the glass system is preferably a low softening glass system such as a PbO—B 2 O 3 system, Bi 2 O 3 —B 2 O 3 system, P 2 O 5 system, TeO 2 system, etc. Low thermal expansion oxides such as alumina, zircon, mullite and titania are desirable. Here, in the case of using a glass phase or a composite phase in which a crystal phase or ceramic particles are dispersed in a glass phase, for example, a glass powder or a mixed powder of glass and ceramics is made into a paste and this is put on an Al plate together with diamond particles. Apply. An Al plate is placed thereon, pressurized, and then degreased by heating at 300 ° C. Furthermore, it manufactures by making glass flow at 450 to 600 degreeC.

また、絶縁性高熱伝導硬質粒子として切頭八面体形状を有するダイヤモンド粒子を用いたが、用いたダイヤモンド粒子のうち、その７０質量％以上が切頭八面体形状を有するダイヤモンド粒子であればよい。
また、絶縁性高熱伝導硬質粒子として用いられる材料は、絶縁抵抗が接合層と同様に１０１０Ω・ｃｍ以上、熱伝導率が５０Ｗ／ｍＫ以上であると共に硬度が高熱伝導体層よりも高いものであればよく、ダイヤモンドに限らず、ＳｉＣ、Ｓｉ３Ｎ４、ＡｌＮ、ＢＮなどを用いてもよい。ここで、上述と同様に、熱伝導率がＡｌ２Ｏ３より高い１５０Ｗ／ｍＫ以上であることが好ましく、絶縁性高熱伝導硬質粒子の硬度が高熱伝導体層の硬さの１０倍以上（例えば、高熱伝導体層３、４をＨｖ５０〜１００の純金属で構成した場合にはＨｖ５００〜１０００の硬さ）よりも高いことが好ましい。 Moreover, although diamond particles having a truncated octahedral shape were used as the insulating high heat conductive hard particles, 70% by mass or more of the diamond particles used may be diamond particles having a truncated octahedral shape.
In addition, the material used as the insulating high thermal conductive hard particles has an insulation resistance of 10 10 Ω · cm or higher, a thermal conductivity of 50 W / mK or higher, and a hardness higher than that of the high thermal conductor layer, similar to the bonding layer. Any other material may be used, not limited to diamond, and SiC, Si 3 N 4 , AlN, BN, or the like may be used. Here, similarly to the above, the thermal conductivity is preferably 150 W / mK or higher, which is higher than that of Al 2 O 3 , and the hardness of the insulating high thermal conductive hard particles is 10 times or more the hardness of the high thermal conductor layer (for example, When the high thermal conductor layers 3 and 4 are made of pure metal having a Hv of 50 to 100, the hardness is preferably higher than the hardness of Hv 500 to 1000.

また、高熱伝導体層として用いられる材料は、絶縁性高熱伝導硬質粒子よりも硬度が低く、熱伝導率が５０Ｗ／ｍＫ以上、好ましくは１５０Ｗ／ｍＫ以上であればよく、ビッカース硬さがＨｖ５０〜１００の純金属（Ｃｕ、Ａｇ、Ａｕなど）や、それらの合金などを用いることができる。ただし、これらに限定することなく、同様の特性を有する純金属、合金などを用いてもよい。   The material used for the high thermal conductor layer may have a hardness lower than that of the insulating high thermal conductive hard particles, the thermal conductivity is 50 W / mK or more, preferably 150 W / mK or more, and the Vickers hardness is Hv50˜ 100 pure metals (Cu, Ag, Au, etc.) and alloys thereof can be used. However, the present invention is not limited to these, and pure metals and alloys having similar characteristics may be used.

この発明にかかるパワーモジュール用基板によれば、発熱体側の熱を効率よく放熱体側に伝導させて放熱し、温度サイクルなどの作用によって熱変形を受けても、安定した性能を長期にわたって発揮することができ、産業上の利用可能性が認められる。   According to the substrate for a power module according to the present invention, heat on the heating element side is efficiently conducted to the radiator side to dissipate heat, and stable performance is exhibited over a long period of time even when subjected to thermal deformation due to an action such as a temperature cycle. And industrial applicability is recognized.

本発明の第１の実施形態における絶縁伝熱構造体を示す概略断面図である。It is a schematic sectional drawing which shows the insulated heat-transfer structure in the 1st Embodiment of this invention. 絶縁性高熱伝導硬質粒子を示す斜視図である。It is a perspective view which shows an insulating high heat conductive hard particle. 絶縁性高熱伝導硬質粒子と接合層と高熱伝導体層との関係を示した説明図である。It is explanatory drawing which showed the relationship between an insulating high heat conductive hard particle, a joining layer, and a high heat conductor layer. 第１の実施の形態の絶縁伝熱構造体の変形例を示した概略断面図である。It is the schematic sectional drawing which showed the modification of the insulated heat transfer structure of 1st Embodiment. 本発明の第２の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 2nd Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第３の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 3rd Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第４の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 4th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第５の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 5th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第６の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 6th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第７の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 7th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第８の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 8th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第９の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 9th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第１０の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 10th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第１１の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 11th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 本発明の第１２の実施形態における絶縁伝熱構造体を示す説明図であって、パワーモジュール用基板に適用した例を示す概略断面図である。It is explanatory drawing which shows the insulated heat-transfer structure in the 12th Embodiment of this invention, Comprising: It is a schematic sectional drawing which shows the example applied to the board | substrate for power modules. 従来のパワーモジュール用基板の一例を示した概略断面図である。It is the schematic sectional drawing which showed an example of the board | substrate for conventional power modules. 従来のパワーモジュール用基板の他の例を示した概略断面図である。It is the schematic sectional drawing which showed the other example of the board | substrate for conventional power modules. 従来のパワーモジュール用基板の他の例を示した概略断面図である。It is the schematic sectional drawing which showed the other example of the board | substrate for conventional power modules.

符号の説明Explanation of symbols

１ 絶縁伝熱構造体
２ 絶縁体層
３、４ 高熱伝導体層
５ 接合層
６ ダイヤモンド粒子（絶縁性高熱伝導硬質粒子）
１０、１５、２０、２５、３０、３５、４０、４５、５０、５５、６０ パワーモジュール用基板
１６ Ｎｉメッキ層（ニッケルメッキ層）
３２ 半導体チップ
５２ 放熱板
５７ ヒートシンク
６１ 付勢部材 DESCRIPTION OF SYMBOLS 1 Insulation heat transfer structure 2 Insulator layer 3, 4 High thermal conductor layer 5 Bonding layer 6 Diamond particle (insulating high thermal conductive hard particle)
10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60 Power module substrate 16 Ni plating layer (nickel plating layer)
32 Semiconductor chip 52 Heat sink 57 Heat sink 61 Biasing member

Claims (13)

絶縁体層と、該絶縁体層の両側に配置され、熱伝導率が１５０Ｗ／ｍＫ以上である高熱伝導体層とを備え、
前記絶縁体層が、前記高熱伝導体層よりも熱伝導率が低いポリイミドからなる接合層と、前記接合層よりも熱伝導率が高く、熱伝導率が１５０Ｗ／ｍＫ以上とされ、かつ前記高熱伝導体層よりも硬度が高い前記高熱伝導体層に突き出されているダイヤモンド粒子からなる絶縁性高熱伝導硬質粒子とを有する絶縁伝熱構造体において、
前記高熱伝導体層と前記絶縁体層との界面における前記絶縁性高熱伝導硬質粒子の投影面積が、前記界面の面積の２０％以上６０％以下であり、
前記高熱伝導体層の一方に、半導体チップを搭載するための回路が形成されていることを特徴とする絶縁伝熱構造体。 Comprising an insulator layer and a high thermal conductor layer disposed on both sides of the insulator layer and having a thermal conductivity of 150 W / mK or more ,
The insulator layer, wherein the bonding layer thermal conductivity than the high thermal conductivity layer is made of a low polyimide, rather thermal conductivity higher than the bonding layer, the thermal conductivity is a 150 W / mK or more, and wherein Insulating heat transfer structure having insulating high heat conductive hard particles composed of diamond particles protruding from the high heat conductive layer having a higher hardness than the high heat conductive layer,
The projected area of the insulating high thermal conductive hard particles at the interface between the high thermal conductor layer and the insulator layer is 20% or more and 60% or less of the area of the interface,
A circuit for mounting a semiconductor chip is formed on one of the high thermal conductor layers. 前記絶縁性高熱伝導硬質粒子のうち、７０質量％以上が切頭八面体形状を有するダイヤモンド粒子によって構成されていることを特徴とする請求項１に記載の絶縁伝熱構造体。   2. The insulated heat transfer structure according to claim 1, wherein 70% by mass or more of the insulating high heat conductive hard particles is constituted by diamond particles having a truncated octahedral shape. 前記絶縁性高熱伝導硬質粒子の粒径が、５０μｍ以上５００μｍ以下であることを特徴とする請求項１または２に記載の絶縁伝熱構造体。   3. The insulated heat transfer structure according to claim 1, wherein the insulating high heat conductive hard particles have a particle size of 50 μm or more and 500 μm or less. 前記高熱伝導体層が、Ａｌ、Ｃｕ、ＡｇまたはＡｕによって形成されていることを特徴とする請求項１から３のいずれか１項に記載の絶縁伝熱構造体。   The insulated heat transfer structure according to any one of claims 1 to 3, wherein the high thermal conductor layer is made of Al, Cu, Ag, or Au. 前記回路が形成された高熱伝導体層が、前記絶縁体層の一面に分割して形成されていることを特徴とする請求項１に記載の絶縁伝熱構造体   2. The insulated heat transfer structure according to claim 1, wherein the high thermal conductor layer on which the circuit is formed is divided and formed on one surface of the insulator layer. 前記分割して形成された高熱伝導体層のうちの１つの厚みが、前記分割して形成された高熱伝導体層のうちの他の少なくとも１つの厚みと異なることを特徴とする請求項５に記載の絶縁伝熱構造体。   6. The thickness of one of the high thermal conductor layers formed by division is different from the thickness of at least one other of the high thermal conductor layers formed by division. The insulated heat transfer structure as described. 前記回路が形成された高熱伝導体層の表面が、ニッケルメッキ層によって被覆されていることを特徴とする請求項１から６のいずれか１項に記載の絶縁伝熱構造体。   The insulated heat transfer structure according to any one of claims 1 to 6, wherein a surface of the high thermal conductor layer on which the circuit is formed is covered with a nickel plating layer. 他方の前記高熱伝導体層が、放熱体であることを特徴とする請求項１から７のいずれか１項に記載の絶縁伝熱構造体。   The insulated heat transfer structure according to any one of claims 1 to 7, wherein the other high thermal conductor layer is a heat radiator. 前記一方の高熱伝導体層の少なくとも一部に、他の電子回路と接続される端子構造が形成されていることを特徴とする請求項１から８のいずれか１項に記載の絶縁伝熱構造体。   9. The insulated heat transfer structure according to claim 1, wherein a terminal structure connected to another electronic circuit is formed on at least a part of the one high thermal conductor layer. 10. body. 請求項１から９のいずれか１項に記載の絶縁伝熱構造体の前記回路が形成された一方の高熱伝導体層の上面に半導体チップが設けられたことを特徴とするパワーモジュール用基板。   10. A power module substrate, wherein a semiconductor chip is provided on an upper surface of one high thermal conductor layer on which the circuit of the insulated heat transfer structure according to claim 1 is formed. 他方の前記高熱伝導体層の下面に放熱板が接合されていることを特徴とする請求項１０に記載のパワーモジュール用基板。   The power module substrate according to claim 10, wherein a heat radiating plate is bonded to a lower surface of the other high thermal conductor layer. 当該パワーモジュール用基板の下面にヒートシンクが設けられていることを特徴とする請求項１０または１１に記載のパワーモジュール用基板。   The power module substrate according to claim 10 or 11, wherein a heat sink is provided on a lower surface of the power module substrate. 前記絶縁伝熱構造体を前記ヒートシンクに対して付勢させる付勢部材を備えることを特徴とする請求項１２に記載のパワーモジュール用基板。   The power module substrate according to claim 12, further comprising a biasing member that biases the insulating heat transfer structure against the heat sink.
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