200823439 九、發明說明 【發明所屬之技術領域】 本發明係有關一種測定配置於容器內之被測溫體的溫 度之測溫裝置。 【先前技術】 在半導體的製造製程中，將半導體基板載置於處理容 器內的載置台上之狀態下，將處理氣體供給到處理容器內 ’並藉由內藏於載置台的加熱器等之加熱機構，加熱半導 體基板，對半導體基板進行特定的處理。在這種處理中， 由於加熱溫度對於半導體基板的品質有很大的影響，故有 必要正確地測定載置台（或加熱機構）的溫度。因此，載 置台的溫度測定較多使用熱應答性優良的熱電對，其中， 較多使用具有··具有由耐熱性的金屬等所構成的護罩、和 配置於該護罩內之熱電對母線的護罩熱電對（例如，參照 專利文獻1、2 )。 [專利文獻1]日本特開平4-63281號公報 [專利文獻2]日本特開平6- 1 768 5 5號公報 護罩熱電對一般係前端部與載置台接觸，雖然氣密的 安裝於處理容器的壁部，但由於爲長尺狀，因此容易在長 度方向上產生安裝誤差。又，當將處理氣體供給至處理容 器內時，因爲處理容器內的壓力變化等，將使載置台些微 移動，因此，護罩熱電對的前端部容易與載置台成爲非接 觸狀態。當前端部與載置台成爲非接觸狀態時，無法正確 -4- 200823439 測定載置台的溫度。因此，護罩熱電對在吸收安裝誤差之 同時，由於追蹤載置台的動作，因此與載置台相對的進退 方向’也就是具有長度方向的自由度，而在處理容器的壁 部使用伸縮管而安裝。 然而’使用伸縮管將護罩熱電對安裝在處理容器的壁 部時，當減去處理容器內的壓力之際，伸縮管內亦減壓， 而有護罩熱電對被按押在載置台側，使護罩熱電對破損之 顧慮。 【發明內容】 [發明所欲解決之課題] 本發明係有鑑於上述問題而硏創者，目的在於提供一 種於使用護罩熱電對的測溫裝置中，防止起因於容器內的 減壓之護罩熱電對或被測溫體的損傷，可正確的測定被測 溫體的溫度之測溫裝置。 [用以解決課題之手段] 又，本發明爲使用護罩熱電對的測溫裝置，目的在於 提供一種可防止因容器內的減壓引起護罩熱電對或被測溫 體的損傷，且可防止因容器內的腐蝕氣體引起腐鈾之測溫 裝置。 本發明之測溫裝置，係測定配置於處理容器內之被測 溫體的溫度，其特徵爲具備有：護套熱電對，其係具有： 由護套、配置於護套內的熱電對母線所構成，朝向處理容 -5- 200823439 器內側延伸而與被測溫體抵接，並且追隨該被測溫體，朝 向進退方向移動的前端部；及朝向處理容器外側延伸，容 許前端部的移動之緩衝部；固接於處理容器外面，收納護 套熱電對的緩衝部之密封構件；及配置於密封構件內，使 護套熱電對的前端部朝向被測溫體側彈壓的彈簧構件，護 套熱電對的緩衝部終端部，係從密閉構件通過溶接部或 釺焊_部，更朝向外側延伸而出。 φ 本發明係處理容器內成爲腐鈾氣體環境，由護套、密 閉構件、及彈簧構件所構成，係與任一腐蝕氣體相對皆具 有耐蝕性的材料之測溫裝置。 本發明係前述彈簧構件由線圈彈簧所構成，在前述密 閉構件內’隨著前述線圈彈簧的伸縮，朝向與前述被測溫 體相對的進退方向移動，收容有與前述腐蝕氣體相對由具 有耐蝕性的材料所構成之活塞，前述護套熱電對係固定於 前述活塞之測溫裝置。 ® 本發明係前述腐蝕氣體係包含鹵素之氣體，與前述腐 蝕氣體相對具有耐蝕性的材料，係由鎳（Ni )或鎳合金所 構成之測溫裝置。 本發明係前述彈簧構件係由英高鎳（Inconel，鎳鉻合 金）（登錄商標）所構成之測溫裝置。 本發明係前述緩衝部係可伸縮地朝向與前述被測溫體 相對的進退方向彎曲之測溫裝置。 本發明係前述緩衝部係彎曲成螺旋狀之測溫裝置。 本發明係前述緩衝部係彎曲成波形之測溫裝置。 -6 - 200823439 根據本發明，係由：使護罩熱電對位於 被測溫體，而可朝向進退方向移動的前端部 容器外延伸而出的方式設置，容許前端部的 所構成，由於設置朝向將護罩熱電對的前端 溫體的方向彈壓之彈簧構件，故不須使用會 的壓力差造成較大影響的伸縮管，可確實的 的前端部與被測溫體接觸。因而，防止因爲 引起護罩熱電對或被測溫體的損傷，並且可 測溫體的溫度。 又，根據本發明，係由：使護罩熱電對 追蹤被測溫體，而可朝向進退方向移動的前 朝向容器外延伸而出的方式設置，容許前端 衝部所構成，由於設置朝向將護罩熱電對的 被測溫體的方向彈壓之彈簧構件，故不須使 內外的壓力差造成較大影響的伸縮管，不會 降低的主因之護罩的一部份剝離，而可確實 對的前端部與被測溫體接觸。而且，曝露在 氣體的環境之護罩密閉構件及彈簧構件，皆 相對具有耐飩性的材料來形成。藉由熔接或 密封構件和護罩的接合部，因此可防止因腐 腐蝕。因而，可防止起因於容器內的減壓之 被測溫體的損傷、及起因於容器內的腐蝕氣 正確測定被測溫體的溫度。 容器內並追蹤 :以及以朝向 移動之緩衝部 部按押於被測 因爲容器內外 使護罩熱電對 容器內的減壓 正確的測定被 位於容器內並 端部；以及以 部的移動之緩 前端部按押於 用會因爲谷器 使成爲耐蝕性 的使護罩熱電 容器內的腐蝕 由與腐飩氣體 釺銲，而形成 蝕氣體而導致 護罩熱電對或 體之腐飩，可 200823439 【實施方式】 以下，參照添附圖面，具體說明本發明的實施形態。 第1圖係槪略表示具備做爲本發明一實施形態的測溫 裝置之晶圓處理裝置的剖面圖。 晶圓處理裝置100係具備有：做爲可收容半導體基板 之晶圓w的處理容器的反應室1;配置在該反應室1內， 載置晶圓W，而調整晶圓w的溫度之溫度調整部的感受 器4 ;測定該感受器4 (被測溫體）的溫度之測溫裝置5 ; 將在晶圓W進行特定處理的腐飩氣體之處理氣體，供給 反應室1內的處理氣體供給機構2;以及可減去反應室1 內的壓力之減壓機構3。 反應室1係形成上部爲開口的略筒狀，在反應室1的 側壁形成用來搬入搬出晶圓w的搬入出口 1 3。並設置有 用來開關該搬入出口 1 3的閘閥1 4。感受器4係介由朝向 高度方向延伸的支柱構件1 1，設置在反應室1的底壁1 9 ，在內部埋設有加熱器40，該加熱器40與加熱器電源41 連接。加熱器電源41即加熱器40，係依據測溫裝置5的 測定溫度，藉由後述的控制器90加以控制，藉此，來調 整載置於感受器4的晶圓W之溫度。 在反應室1的上部閉塞開口，且以與感受器4相對的 方式設置有噴頭15。噴頭15係在內部具有使處理氣體供 給機構2來擴散處理氣體的擴散空間1 6，且形成利用處理 氣體供給機構2吐出處理氣體至感受器4的相對面之複數 或多數個吐出孔1 7。 -8 - 200823439 在反應室1的側壁下部形成排出孔1 8。減壓機構3 具有：與排出孔18連接的排氣管31;和介由排氣管31 出反應室1內的氣體之排氣裝置32。 處理氣體供給機構2係具有：儲存包含鹵系氣體（ 含鹵素的氣體）等腐蝕氣體之處理氣體的處理氣體儲存 21，將來自處理氣體儲存部21的處理氣體導入至噴頭 的擴散空間16內之導管22 ;調整使導管22流通的處理 體的流量的流量調整機構之質量流控制器23及閥24。 外，在將複數種類不同的處理氣體供給至反應室1內時 例如，設置有複數個處理氣體供給機構2。 然後，詳細說明測溫裝置5。 第2 ( a )圖爲測溫裝置5的剖面圖，第2 ( b )圖 護罩熱電對50的剖面圖。 測溫裝置5係往反應室1內側延伸，並與感受器4 接之同時，追蹤該感受器4而朝向進退方向移動的前端 (軸方向一方側）50a ;朝向反應室1外側延伸，容許 端部50a的移動之緩衝部（軸方向另一方側）50b的 罩熱電對5 0 ;以及固接在反應室1外面，收納護罩熱電 5〇的緩衝部50b之密閉構件51。又，在密閉構件51內 納有：安裝於護罩熱電對5 0的活塞5 4 ;安裝於活塞5 4 做爲使護罩熱電對50的前端部50a朝向感受器4按押 方向彈壓之彈簧構件之壓縮線圈彈簧5 3。收容該活塞 、壓縮線圈彈簧5 3、和緩衝部5 Ob的密閉構件5 1，其 部與反應室1的內部連通，並且與反應室丨的壁部，例 係 排 包 部 15 氣 此 爲 抵 部 、r· 刖 護 對 收 的 54 內 如 -9- 200823439 與底壁1 9氣密密接而設置。緩衝部5 Ob的終端部份係朝 向密閉構件51的外部延伸而出，密閉構件51的緩衝部 50b之終端部份朝向外部（反應室1外的環境氣體側）延 伸而出的部份，係氣密性設置接合部5 5。 護罩熱電對50係如第2 ( b )圖所示，具備有：熱電 對母線50c、覆蓋該熱電對母線50c的中空之護罩50d、 以及充塡在該護罩50d內的氧化鎂（magnesia)絕緣材 50e。護罩熱電對50的護罩50d，係藉由具有對於鹵系氣 體具有耐蝕性的材料，例如，純鎳（Ni )或鎳、鉻、鉬（ NiCrMo )或耐蝕合金（Hastelloy )等之鎳合金所形成。 此外，護罩50d以及絕緣材50e，從密閉構件51往外部延 伸而出的部份不一定要設置。 護罩熱電對50的前端部50a，例如藉由插入到形成於 感受器4下面的插入孔4a內，而與感受器4接觸。護罩 熱電對50的緩衝部50b，以可朝向與感受器4相對的進退 方向伸縮之方式，例如呈螺旋狀屈曲或彎曲。護罩熱電對 50之終端部與訊號傳送部52連接，訊號傳送部52將護罩 熱電對50的測定溫度訊號傳送到後述的控制器90，構成 控制器90依據該測定溫度訊號，來控制加熱器電源4 1， 即加熱器40的溫度。 密閉構件5 1係具有··對於鹵系氣體具有耐飩性的材 料，例如，由和護罩熱電對50之護罩50d同種的金屬之 純鎳或鎳合金所構成，而具有筒狀形狀。密閉構件51係 從軸方向一方側朝向另一方側，依序具有：收容隨著壓縮 -10- 4 4BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring device for measuring the temperature of a temperature measuring body disposed in a container. [Prior Art] In a semiconductor manufacturing process, a semiconductor substrate is placed on a mounting table in a processing container, and a processing gas is supplied into the processing container, and a heater or the like built in the mounting table is used. The heating means heats the semiconductor substrate to perform specific processing on the semiconductor substrate. In such a process, since the heating temperature greatly affects the quality of the semiconductor substrate, it is necessary to accurately measure the temperature of the mounting table (or the heating mechanism). Therefore, a thermoelectric pair having excellent thermal responsiveness is often used for measuring the temperature of the mounting table. Among them, a shroud having a heat-resistant metal or the like and a thermoelectric pair bus bar disposed in the shroud are often used. The shroud thermoelectric pair (for example, refer to Patent Documents 1 and 2). [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The wall portion, but because of its long shape, it is easy to cause mounting errors in the longitudinal direction. Further, when the processing gas is supplied into the processing container, the mounting table is slightly moved by the pressure change in the processing container or the like. Therefore, the tip end portion of the shroud thermoelectric pair is liable to be in a non-contact state with the mounting table. When the current end is not in contact with the mounting table, it is not correct. -4- 200823439 Measure the temperature of the mounting table. Therefore, since the shroud thermoelectric pair absorbs the mounting error and tracks the operation of the mounting table, the advancing and retracting direction 'opposite to the mounting table' has a degree of freedom in the longitudinal direction, and is mounted on the wall portion of the processing container using a telescopic tube. . However, when the telescopic tube is used to mount the shield thermoelectric pair on the wall of the processing container, when the pressure in the processing container is subtracted, the inside of the telescopic tube is also decompressed, and the thermoelectric pair of the shield is pressed on the mounting table side. To make the shield thermoelectricity to the fear of damage. [Problem to be Solved by the Invention] The present invention has been made in view of the above problems, and an object of the present invention is to provide a temperature measuring device using a thermocouple of a shroud to prevent decompression caused by a container. The temperature measuring device that can accurately measure the temperature of the temperature to be measured by the thermal power of the cover or the damage to the temperature measuring body. [Means for Solving the Problem] Further, the present invention is a temperature measuring device using a thermoelectric pair of a shield, and an object of the invention is to provide a method for preventing damage to a thermoelectric pair or a temperature-measured body caused by decompression in a container, and A temperature measuring device for preventing uranium caused by corrosive gases in the container. The temperature measuring device according to the present invention is configured to measure a temperature of a temperature measuring body disposed in a processing container, and is characterized by comprising: a sheath thermoelectric pair having: a sheath and a thermoelectric pair bus bar disposed in the sheath The front end portion that extends toward the inside of the processing chamber and that is in contact with the temperature measuring body, and that moves toward the forward and backward directions, and extends toward the outside of the processing container, allows the movement of the front end portion. a buffering portion; a sealing member that is fixed to the outer surface of the processing container and houses the buffer portion of the jacket thermoelectric pair; and a spring member that is disposed in the sealing member to bias the tip end portion of the sheath thermoelectric pair toward the temperature-measuring body side The end portion of the buffer portion of the thermoelectric pair extends from the sealing member through the welded portion or the welded portion to the outside. φ The present invention is a temperature measuring device which is a corrosive uranium gas atmosphere and is composed of a sheath, a sealing member, and a spring member, and is a material having corrosion resistance as opposed to any corrosive gas. According to the present invention, the spring member is formed of a coil spring, and moves in the advancing and retracting direction of the temperature-measuring body in accordance with expansion and contraction of the coil spring in the sealing member, and contains corrosion resistance with respect to the corrosive gas. The piston formed by the material, the sheath thermoelectric pair is fixed to the temperature measuring device of the piston. The present invention is a gas containing a halogen in the above-mentioned etching gas system, and a material having corrosion resistance with respect to the above-mentioned corrosion gas is a temperature measuring device composed of nickel (Ni) or a nickel alloy. In the present invention, the spring member is a temperature measuring device composed of Inconel (registered trademark). In the present invention, the buffer portion is a temperature measuring device that is telescopically curved toward an advancing and retracting direction opposite to the temperature measuring body. The present invention is a temperature measuring device in which the buffer portion is curved in a spiral shape. The present invention is a temperature measuring device in which the buffer portion is curved into a waveform. -6 - 200823439 According to the present invention, the thermostat is placed on the temperature-measuring body, and the front end portion of the container that can be moved in the advancing and retracting direction is extended outside, and the front end portion is allowed to be formed. Since the spring member that biases the front end of the thermocouple of the thermocouple is pressed, it is not necessary to use a telescopic tube that greatly affects the pressure difference, and the positive end portion can be in contact with the temperature measuring body. Therefore, it is prevented that the thermocouple of the shield or the temperature to be measured is damaged, and the temperature of the temperature body can be measured. Further, according to the present invention, the shield thermoelectric pair is used to track the temperature measuring body, and the front portion that can be moved in the forward and backward direction is extended toward the outside of the container, and the front end punching portion is allowed to be formed. The spring member of the thermoelectric pair that is biased in the direction of the temperature measuring body, so that the telescopic tube that does not have a large influence on the pressure difference between the inside and the outside does not need to be reduced, and the part of the main cover that is not lowered is peeled off, and it is true. The front end portion is in contact with the body to be measured. Further, the shroud sealing member and the spring member exposed to the atmosphere of the gas are formed with respect to the material having the tamper resistance. By welding or sealing the joint between the member and the shroud, corrosion due to corrosion can be prevented. Therefore, it is possible to prevent damage of the temperature-measured body due to decompression in the container and to accurately measure the temperature of the temperature-measured body due to the corrosive gas in the container. The inside of the container is tracked: and the buffer portion facing the movement is pressed against the inside of the container, and the measurement of the decompression in the container by the thermoelectricity of the shield is located inside the container and the end portion; and the slow front end of the movement of the portion The use of the part is because the barn is made of corrosion resistance, and the corrosion in the thermal capacitor of the shield is caused by the welding of the corrosive gas with the corrosive gas, which causes the thermoelectric or corrosive of the shield, which can be implemented in 200823439. Modes Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings. Fig. 1 is a cross-sectional view showing a wafer processing apparatus including a temperature measuring device according to an embodiment of the present invention. The wafer processing apparatus 100 includes a reaction chamber 1 as a processing container that can accommodate a wafer w of a semiconductor substrate, and a temperature in which the wafer W is placed in the reaction chamber 1 to adjust the temperature of the wafer w. The sensor 4 of the adjustment unit; the temperature measuring device 5 for measuring the temperature of the susceptor 4 (the temperature to be measured); and the processing gas supply mechanism for supplying the processing gas of the sulphur gas to the specific processing of the wafer W to the reaction chamber 1 2; and a pressure reducing mechanism 3 which can reduce the pressure in the reaction chamber 1. The reaction chamber 1 has a slightly cylindrical shape with an open upper portion, and a carry-in port 1 3 for carrying in and out the wafer w is formed on the side wall of the reaction chamber 1. A gate valve 14 for opening and closing the loading port 13 is provided. The susceptor 4 is disposed on the bottom wall 19 of the reaction chamber 1 via a pillar member 1 1 extending in the height direction, and a heater 40 is embedded therein, and the heater 40 is connected to the heater power source 41. The heater power source 41, that is, the heater 40, is controlled by the controller 90, which will be described later, in accordance with the temperature measured by the temperature measuring device 5, thereby adjusting the temperature of the wafer W placed on the susceptor 4. The opening is closed at the upper portion of the reaction chamber 1, and the head 15 is disposed opposite to the susceptor 4. The head 15 has a diffusion space 16 for diffusing the processing gas by the processing gas supply mechanism 2, and a plurality or a plurality of discharge holes 17 for discharging the processing gas to the opposite surface of the susceptor 4 by the processing gas supply unit 2. -8 - 200823439 A discharge hole 18 is formed in the lower portion of the side wall of the reaction chamber 1. The pressure reducing mechanism 3 has an exhaust pipe 31 connected to the discharge hole 18, and an exhaust device 32 that discharges the gas in the reaction chamber 1 through the exhaust pipe 31. The processing gas supply mechanism 2 includes a processing gas storage 21 that stores a processing gas containing an etching gas such as a halogen-based gas (a halogen-containing gas), and introduces the processing gas from the processing gas storage unit 21 into the diffusion space 16 of the shower head. The conduit 22; the mass flow controller 23 and the valve 24 of the flow rate adjustment mechanism that adjusts the flow rate of the treatment body through which the conduit 22 flows. Further, when a plurality of different types of processing gases are supplied into the reaction chamber 1, for example, a plurality of processing gas supply mechanisms 2 are provided. Next, the temperature measuring device 5 will be described in detail. Fig. 2(a) is a cross-sectional view of the temperature measuring device 5, and Fig. 2(b) is a cross-sectional view of the shroud thermoelectric pair 50. The temperature measuring device 5 extends toward the inside of the reaction chamber 1 and is connected to the susceptor 4, and the distal end (axial side) 50a that follows the susceptor 4 and moves in the advancing and retracting direction; extends toward the outside of the reaction chamber 1, and allows the end portion 50a. The cover thermoelectric pair 50b of the moving buffer portion (the other side in the axial direction) 50b, and the sealing member 51 of the buffer portion 50b that is fixed to the outside of the reaction chamber 1 and houses the thermoelectric heat of the shield 5b. Further, the sealing member 51 includes a piston 5 4 attached to the shroud thermoelectric pair 50; and a spring member attached to the piston 5 4 as a biasing direction of the tip end portion 50a of the shroud thermoelectric pair 50 toward the susceptor 4 The compression coil spring 5 3 . The sealing member 151 for accommodating the piston, the compression coil spring 533, and the buffer portion 5 Ob communicates with the inside of the reaction chamber 1 and is in contact with the wall portion of the reaction chamber ,, for example, the accommodating portion 15 The r, · 对 对 54 54 54 54 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 -9 The terminal portion of the buffer portion 5 Ob extends toward the outside of the sealing member 51, and the terminal portion of the buffer portion 50b of the sealing member 51 extends toward the outside (the ambient gas side outside the reaction chamber 1). The joint portion 55 is airtight. As shown in the second (b) diagram, the shroud thermoelectric pair 50 includes a thermoelectric pair bus bar 50c, a hollow shield 50d covering the thermoelectric pair bus bar 50c, and magnesia filled in the shroud 50d ( Magnesia) insulation material 50e. The shroud 50d of the shroud thermoelectric pair 50 is made of a material having corrosion resistance to a halogen-based gas, for example, a nickel alloy such as pure nickel (Ni) or nickel, chromium, molybdenum (NiCrMo) or a corrosion-resistant alloy (Hastelloy). Formed. Further, the shield 50d and the insulating member 50e are not necessarily provided to extend outward from the sealing member 51. The front end portion 50a of the shroud thermoelectric pair 50 is brought into contact with the susceptor 4 by, for example, being inserted into the insertion hole 4a formed under the susceptor 4. The buffer portion 50b of the thermoelectric pair 50 is flexibly bent or bent, for example, so as to be expandable and contractable in the advancing and retracting direction opposite to the susceptor 4. The terminal portion of the shroud thermoelectric pair 50 is connected to the signal transmitting portion 52. The signal transmitting portion 52 transmits the measured temperature signal of the shroud thermoelectric pair 50 to a controller 90, which will be described later, and the controller 90 controls the heating according to the measured temperature signal. The power source 4 1, that is, the temperature of the heater 40. The sealing member 5-1 has a sturdy resistance to a halogen-based gas, and is made of, for example, a pure nickel or a nickel alloy of the same type as the shroud 50d of the shroud thermoelectric pair 50, and has a tubular shape. The sealing member 51 is oriented from one side in the axial direction toward the other side, and sequentially has a housing compression -10- 4 4
200823439 線圈彈簧53及壓縮線圈彈簧53的伸縮，朝向與感受器 相對的進退方向移動之活塞54的密閉構件汽缸部5〗b ; 及收容護罩熱電對50的緩衝部50b之緩衝收容部51c。 密閉構件51的軸方向一端部形成突緣5 1 a，密閉構件 之突緣51a的一端面，藉由與反應室1的底壁19的外 (底面）氣密的抵接而被安裝。在密閉構件51的軸方 另一側的壁部，設置有前述的接合部55，接合部55係 由溶接或釺銲而形成。在此、，藉由將密閉構件5 1設爲 護罩熱電對50的護罩50d爲同種的金屬製，而兩者的 接或釺銲良好，藉由接合部55可確實將護罩50d固定 密閉構件5 1。 壓縮線圏彈簧5 3係具有··對於鹵系氣體具有耐| 且可確保彈力之材料，例如藉由包含鎳鉻合金（登錄后 )或鎳、鉬的SUS316L等所形成，活塞54係藉由具3 於鹵系氣體具有耐鈾性的材料，例如，藉由和護罩熱1 5 0的護罩同種的金屬之純鎳或鎳合金所形成。在活塞 設置有使護罩熱電對50的護罩貫通內部的貫通口，如 兩者爲溶接或釺銲，或藉由扣眼等加以固定，藉此，言| 熱電對50的前端部50a，介由活塞54的壓縮線圈彈簧 之彈力，被朝向感受器4按押並加以彈壓（第2(a) 9 箭號F方向）。在此，藉由將活塞54設爲與護罩熱賃 50的護罩50d同種的金屬製，使兩者的溶接或釺銲良免 而可確實固定護罩50d。 晶圓處理裝置1〇〇的各構成部，係成爲與具備微读 以 在 51 面 向 藉 與 溶 在 性 標 對 對 54 等 罩 53 的 對 理 -11 - 200823439 益（電腦）的控制9 0 (控制部）連接而控制的構成。在 控制器90連接有：用來管理晶圓處理裝置ϊ〇〇的各構成 部，而進行指令的輸入操作等之鍵盤；可看見反應室1的 運轉狀況並顯示的顯示器等所構成的使用者介面；儲存包 含用來控制器90的控制實現在晶圓處理裝置丨〇〇所實行 的處理之控制程式、以及處理條件資料的處理程式之記憶 部。因應需要，依據來自使用者介面的指示等，將任意的 處理程式從記憶部叫出，於控制器9 0實行，在控制器9 0 的控制下，於晶圓處理裝置1 0 0進行期望之處理。 在這種構成的晶圓處理裝置100中，以如下之方式進 行晶圓W的處理。首先，在藉由閘閥14開放搬入出口 13 的狀態下，將晶圓W從搬入出口 13搬入到反應室1內， 並載置於感受器4上，藉由閘閥14閉塞搬入出口 13。 然後，使減壓機構3的排氣裝置32動作，將反應室1 內的例如真空壓減壓到特定的壓力，並藉由處理氣體供給 機構2，經由噴頭15供給特定流量之處理氣體至反應室1 內，藉由加熱器40，並介由感受器4來加熱晶圓W。當 藉由加熱器40加熱時，如前所述，護罩熱電對5 0測定感 受器4的溫度，訊號傳送部52將護罩熱電對50測定之感 受器4的測定溫度訊號，傳送到控制器90，控制器90依 據該測定溫度訊號來控制加熱器40的溫度，而使感受器4 上的晶圓W被調整到特定的溫度。藉此，對晶圓W進行 特定的處理。 在此，當藉由處理氣體供給機構2供給反應室1內之 -12- 200823439 處理氣體，及/或藉由減壓機構3減去反應室1內的壓力 之際，藉由使反應室1內的壓力變化，而在感受器4多少 產生搖晃等動作。然而，護罩熱電對50的緩衝部50b朝 向與感受器4相對的進退方向伸縮，而且護罩熱電對5 0 的前端部50a以被壓縮線圈彈簧53按押在感受器4的方 式彈壓，護罩熱電對50的前端部50a係追蹤感受器4的 動作而移動，而保持與感受器4的接觸。因而，可正確測 φ 定感受器4的溫度，藉此，可以較佳的精確度控制加熱器 40的溫度，並可提高晶圓W的處理品質。 又，藉由彈簧構件，例如壓縮線圈彈簧5 3，將護罩熱 電對50的前端部50a按押在感受器4而彈壓，如以往所 示，藉由大氣和真空的差壓，不需使用明顯有較大按押力 之伸縮管，因此，藉由反應室1內的減壓，可防止護罩熱 電對50強力的按押在感受器4，藉此，防止護罩熱電對 5 〇及感受器4的損傷，可提高裝置的耐久性。 • 又，使護罩熱電對50例如每一護罩50d彎曲成螺旋 狀，藉由形成緩衝部50b，如以往所述，使護罩的一部份 k 剝離，而沒有必要露出熱電對母線來確保耐熱性，藉此， 即使在反應室1內保持高溫之情況下亦可因應。 此外，緩衝部50b如減輕伸縮之際的負荷時，以具有 極小的曲率爲佳，又，如伸縮時的負荷分散，則以在感受 器4相對之進退方向上具有一定的規則性之形狀爲佳。做 爲這種緩衝部52b的形狀，除第2(a)圖所示的螺旋狀以 外，例如可舉出第3圖所示的波形。 -13- 200823439 再者，曝露在反應室1內的處理氣體，如鹵素系 等腐蝕氣體的環境中之測溫裝置5的各構件，也就是 熱電對50的護罩50d、密閉構件51、壓縮線圈彈簧 以及活塞54，與處理氣體相對皆爲具有耐蝕性的材料 如藉由鎳或鎳合金來形成。又，使護罩熱電對5 0的 5 0d和密閉構件51氣密接合的接合部55，藉由溶接 銲來形成。因此，完全不需使用樹脂等有機系材料， 防止因處理氣體而導致腐蝕測溫裝置5，可避免有機 〇 然後，藉由減壓機構3進行反應室1內之減壓， 處理氣體供給機構2供給處理氣體至反應室1內、以 由加熱器4 0加熱晶圓W特定時間。若對晶圓W進行 的處理，而停止藉由處理氣體供給機構2將處理氣體 到反應室1內、及停止藉由加熱器40對於晶圓W的 ，藉由閘閥1 4開放搬入出口 13，將晶圓W從搬入 1 3搬出到反應室1外。 然後，藉由第6圖說明本發明的比較例。 如第6圖所示，將些微的伸縮在此爲伸長狀態的 管C的一端部及另一端部，氣密的安裝在個別的護罩 對A及處理容器的壁部，例如底壁部D，事先使護罩 對A較弱的按押在載置台B上，藉由伸縮管c的伸 使護罩熱電對A追蹤載置台的動作。 然而，在半導體的製程中，一般在供給處理氣體 除了進行所謂將處理容器內例如減壓至真空壓之外， 氣體 護罩 53 > ，例 護罩 或釺 而可 污染 藉由 及藉 特定 供給 加熱 出口 伸縮 熱電 熱電 縮， 時， 伸縮 -14- 200823439 管一般依照製造過程的情況’具有某程度的徑R。 在使用前述伸縮管c的護罩熱電對之安裝態樣中， 處理容器內例如減壓至真空壓，而對於伸縮管c施 其直徑R的大氣和真空之差壓，而明顯較大往載置 按押力，作用在護罩熱電對A(參照第6圖的箭號 結果，導致護罩熱電對A強力的按押在載置台B上 損傷護罩熱電對A或載置台B的顧慮。 • 相對於此，根據本申請案之發明，如上所述， 需要使用伸縮管，而不需藉由反應室1內的減壓， 熱電對50強力的按押在感受器4上，可防止護罩 50及感受器4的損傷。 此外，本發明不限定於上述實施形態，而可進 的變形。在上述實施形態中，雖在反應室1內使護 對50露出而配置測溫裝置5，但例如第4圖所示， 電對50亦可收納在筒狀的支柱構件11內，而配置 ^ 置5。 又，在上述實施形態中，一體形成收容緩衝部 ，緩衝收容部51c ;收容壓縮線圈彈簧53及活塞54 . 部5 1 b ;從汽缸部5 1 b的一端部突出的突緣51& — ，構成密閉構件5 1。該密閉構件51的突緣5 1 a之 ，與反應室1的底壁19之外面密接而安裝。然而 第5圖所示，密閉構件51係具有：安裝在反應室 壁1 9之外面（底面）的外側構件5 1 d ;安裝在反應 底壁19的內面（上面）的內側構件5 1 e亦可，此 因此， 藉由將 加因應 台B的 E )。 ，而有 由於不 使護罩 熱電對 行各種 罩熱電 護罩熱 測溫裝 50b的 的汽缸 體形成 一端面 ，例如 1的底 室1的 時，在 -15- 200823439 外側構件51d和內側構件51e之間，配置有緩衝部50b、 壓縮線圈彈簧53及活塞54。在第5圖中，外側構件51d 係形成於收容緩衝部50b的容器狀，內側構件5 1 e係形成 圍繞護罩熱電對50的環狀，壓縮線圈彈簧53及活塞54 係挾在外側構件5 1 d和內側構件5 1 e之間，並配置在反應 室1的底壁19內。此時，圍繞反應室1的底壁19之壓縮 線圈彈簧53及活塞54之部份，也做爲密閉構件51的一 部份之功能。藉由這種構成，可謀求密閉構件51 (從密 閉構件5 1的反應室1之底壁1 9突出的部份）的小型化。 此外，不使用絕緣材50e，將壓縮線圏彈簧53及活塞54 挾在外側構件5 1 d和反應室1的底壁1 9之間而配置亦可 ，或者不使用外側構件，而將絕緣材50e形成容器狀，將 緩衝部50b、壓縮線圈彈簧53及活塞54收容在絕緣材 5 0 e內亦可。 又，在上述實施形態中，雖使用壓縮線圈彈簧做爲彈 簧構件，但並不限定於此，亦可使用引拉線圈彈簧等其他 彈黃。 再者，在上述實施形態中，雖說明藉由加熱器的加熱 ，調整半導體晶圓的溫度時之適用例，但並不限定於此， 例如，亦可適用在利用冷板的冷卻，來調整晶圓的溫度之 情況。又，被處理體亦不限於半導體晶圓，而亦可爲FPD 用玻璃基板等。 [產業上利用的可能性] -16 - 200823439 本發明係亦可全面使用在對於半導體基板進行成 理之 CVD ( Chemical Vapor Deposition)裝置、或對 (Chemical Oxide Removal)處理後的半導體基板進 處理之後加熱裝置等，亦可使用在測定配置於腐鈾氣 境的容器內之被測溫體的溫度之用途。 【圖式簡單說明】 # 第1圖係槪略表示具備做爲本發明一實施形態的 裝置之晶圓處理裝置的剖面圖。 第2 ( a )圖爲測溫裝置的剖面圖，第2 ( b )圖 罩熱電對的剖面圖。 第3圖係設置於測溫裝置的緩衝部之變形例的圖 第4圖係安裝於測溫裝置的處理容器之其他安裝 圖。 第5圖係設置於測溫裝置的密閉構件之變形例的 ^ 第6圖係作爲比較例之安裝於護罩熱電對的處理 之安裝態樣圖。 - 【主要元件符號說明】 WO :晶圓處理裝置 1 :反應室 2 :處理氣體供給機構 3 :減壓機構 4 :感受器 膜處 COR 行熱 體環 測溫 爲護 態樣 圖。 容器 -17- 200823439 5 :測溫裝置 W :晶圓 1 1 :支柱構件 1 3 :搬入出口 1 4 :閘閥 1 9 :底壁 40 :加熱器 _ 4 1 :加熱器電源 1 5 :噴頭 1 6 :擴散空間 1 7 :吐出孔 1 8 :排氣口 31 :排氣管 32 :排氣裝置 2 1 :處理氣體貯存部 Φ 22 ··導管 23 :質量流控制器 • 24 :閥 50 :護罩熱電對 50b :緩衝部 5〇a :前端部 5 1 :密閉構件 54 :活塞 5 3 :壓縮線圈彈簧 -18 200823439 5 5 :接合部 50d :護罩 5〇c :熱電對母線 50e :絕緣材（內側構件） 5 2 :訊號傳送部 51a :突緣部 51b :汽缸部 0 5 1 c :緩衝收容部 90 :控制器 A :護罩熱電對 D :底壁部 C :伸縮管 R :徑 B :載置台 • -19-200823439 The coil spring 53 and the compression coil spring 53 expand and contract, and the sealing member cylinder portion 5b of the piston 54 that moves in the advancing and retracting direction opposite to the susceptor; and the buffer accommodating portion 51c that accommodates the buffer portion 50b of the shroud thermoelectric pair 50. One end portion of the sealing member 51 in the axial direction forms a flange 5 1 a, and one end surface of the flange 51a of the sealing member is attached by airtight contact with the outer (bottom surface) of the bottom wall 19 of the reaction chamber 1. The joint portion 55 is provided on the other wall portion of the seal member 51 on the other side of the shaft, and the joint portion 55 is formed by welding or brazing. Here, the shroud 50d of the shroud thermoelectric pair 50 is made of the same kind of metal, and the joining or brazing of the two is good, and the shroud 50d can be surely fixed by the joint 55. Sealing member 51. The compression coil spring 5 3 has a material that is resistant to a halogen gas and can secure elasticity, and is formed of, for example, a nickel-chromium alloy (after registration) or SUS316L of nickel or molybdenum, and the piston 54 is used. A material having a uranium-resistance property of a halogen-based gas, for example, formed of a pure nickel or a nickel alloy of the same kind as the shield of the heat of the shield. The piston is provided with a through hole through which the shield of the shroud thermoelectric pair 50 penetrates, and if both are welded or brazed, or fixed by a buttonhole or the like, the front end portion 50a of the thermoelectric pair 50 is introduced. The elastic force of the compression coil spring of the piston 54 is pressed toward the susceptor 4 and pressed (2 (a) 9 arrow F direction). Here, the piston 54 is made of the same kind of metal as the shroud 50d of the shroud heat 50, so that the welding or the welding of the two can be surely fixed, and the shroud 50d can be surely fixed. Each component of the wafer processing apparatus 1 is controlled by a versatile (computer) with a cover 53 that is provided with a micro-reading in the face of the pair 51 (2008). The control unit is configured to be connected and controlled. The controller 90 is connected to a keyboard for managing each component of the wafer processing apparatus, a command input operation, and the like, and a user who can see the operation state of the reaction chamber 1 and display the display. The interface stores a memory including a control program for realizing processing performed by the wafer processing apparatus and a processing program for processing condition data. If necessary, an arbitrary processing program is called from the memory unit according to an instruction from the user interface, and is executed by the controller 90. Under the control of the controller 90, the wafer processing apparatus 100 performs the desired operation. deal with. In the wafer processing apparatus 100 having such a configuration, the processing of the wafer W is performed in the following manner. First, the wafer W is carried into the reaction chamber 1 from the carry-in port 13 while the gate valve 14 is opened and the outlet 13 is opened. The wafer W is placed on the susceptor 4, and the gate 13 is closed by the gate valve 14. Then, the exhaust device 32 of the pressure reducing mechanism 3 is operated to depressurize the pressure in the reaction chamber 1 to a specific pressure, for example, and the processing gas supply mechanism 2 supplies a processing gas of a specific flow rate to the reaction via the shower head 15. In the chamber 1, the wafer W is heated by the heater 40 and via the susceptor 4. When heated by the heater 40, as described above, the cover thermoelectric force measures the temperature of the susceptor 4, and the signal transmitting portion 52 transmits the measured temperature signal of the susceptor 4 measured by the shield thermoelectric force 50 to the controller 90. The controller 90 controls the temperature of the heater 40 according to the measured temperature signal, so that the wafer W on the susceptor 4 is adjusted to a specific temperature. Thereby, the wafer W is subjected to specific processing. Here, when the process gas is supplied to the -12-200823439 process gas in the reaction chamber 1 by the process gas supply mechanism 2, and/or the pressure in the reaction chamber 1 is subtracted by the pressure reduction mechanism 3, the reaction chamber 1 is made The pressure inside changes, and the sensation 4 produces a lot of movements such as shaking. However, the buffer portion 50b of the shroud thermoelectric pair 50 expands and contracts in the advancing and retracting direction opposite to the susceptor 4, and the tip end portion 50a of the shroud thermoelectric pair 50 is biased by the compressed coil spring 53 in the susceptor 4, and the shroud is thermoelectrically charged. The distal end portion 50a of the pair 50 moves by following the action of the susceptor 4, and maintains contact with the susceptor 4. Therefore, the temperature of the susceptor 4 can be accurately measured, whereby the temperature of the heater 40 can be controlled with better precision, and the processing quality of the wafer W can be improved. Further, by the spring member, for example, the compression coil spring 53, the front end portion 50a of the shroud thermoelectric pair 50 is pressed against the susceptor 4, and as shown in the prior art, the differential pressure between the atmosphere and the vacuum is not required to be used. The telescopic tube has a large pressing force. Therefore, by the decompression in the reaction chamber 1, the thermoelectric force of the shield can be prevented from being strongly pressed against the susceptor 4, thereby preventing the thermoelectric pair of the hood and the susceptor 4 from being removed. Damage can improve the durability of the device. • Further, the shroud thermoelectric pair 50, for example, each shroud 50d is bent into a spiral shape, and by forming the buffer portion 50b, as described above, a part of the sh is peeled off, and it is not necessary to expose the thermoelectric pair bus bar. The heat resistance is ensured, whereby the temperature can be maintained even in the reaction chamber 1 while maintaining a high temperature. Further, when the buffer portion 50b reduces the load during expansion and contraction, it is preferable to have a very small curvature, and if the load during expansion and contraction is dispersed, it is preferable to have a regular shape in the direction in which the susceptor 4 is relatively advanced. . As the shape of the buffer portion 52b, in addition to the spiral shape shown in Fig. 2(a), for example, the waveform shown in Fig. 3 can be cited. Further, the components of the temperature measuring device 5 exposed to the processing gas in the reaction chamber 1, such as a halogen-based corrosive gas, that is, the shield 50d of the thermoelectric pair 50, the sealing member 51, and the compression The coil spring and the piston 54 are both corrosion-resistant materials, such as nickel or nickel alloy, as opposed to the process gas. Further, the joint portion 55 that thermally seals the cover thermoelectric force 50 to 50 and the sealing member 51 is formed by fusion welding. Therefore, it is not necessary to use an organic material such as a resin, and the corrosion temperature measuring device 5 is prevented from being caused by the processing gas, organic enthalpy can be avoided, and then the pressure reduction in the reaction chamber 1 is performed by the pressure reducing mechanism 3, and the gas supply mechanism 2 is processed. The processing gas is supplied into the reaction chamber 1 to heat the wafer W by the heater 40 for a specific time. When the processing of the wafer W is performed, the processing gas is stopped in the reaction chamber 1 by the processing gas supply mechanism 2, and the wafer W is stopped by the heater 40, and the gate 13 is opened and moved into the outlet 13 by the gate valve 14. The wafer W is carried out from the carry-in 1 to the outside of the reaction chamber 1. Next, a comparative example of the present invention will be described with reference to Fig. 6. As shown in Fig. 6, the one end portion and the other end portion of the tube C which is slightly stretched here are airtightly attached to the individual guard pair A and the wall portion of the processing container, for example, the bottom wall portion D. The guard is weakly pressed against the mounting table B in advance, and the movement of the telescopic tube c causes the shroud thermoelectric to track the operation of the mounting table. However, in the manufacturing process of the semiconductor, generally, in the supply of the processing gas, in addition to performing so-called depressurization to vacuum pressure in the processing container, the gas shield 53 >, such as a shield or a crucible, can be contaminated by borrowing and lending a specific supply. When the heating outlet is telescopic thermoelectric heat shrinking, the telescopic-14-200823439 tube generally has a certain diameter R according to the conditions of the manufacturing process. In the mounting aspect of the thermoelectric pair of the shroud tube c, the inside of the processing container is, for example, depressurized to a vacuum pressure, and the differential pressure of the atmosphere R and the vacuum of the diameter R of the telescopic tube c is significantly increased. The pressing force is applied to the cover thermoelectric pair A (refer to the arrow result in Fig. 6, which causes the shield thermoelectric to strongly press A on the mounting table B to damage the cover thermoelectric pair A or the mounting table B. • In contrast, according to the invention of the present application, as described above, it is necessary to use a telescopic tube without the decompression in the reaction chamber 1, and the thermoelectric force is strongly pressed against the susceptor 4 to prevent the shield. 50. The damage of the susceptor 4. The present invention is not limited to the above embodiment, and can be modified. In the above embodiment, the temperature measuring device 5 is disposed by exposing the protective pair 50 in the reaction chamber 1, but for example, As shown in Fig. 4, the electric pair 50 can be housed in the cylindrical pillar member 11 and disposed. 5. In the above embodiment, the accommodation buffer portion is integrally formed, and the buffer accommodation portion 51c is accommodated; 53 and piston 54. part 5 1 b; from the cylinder portion 5 1 b The flange 51 & - protruding at one end constitutes a sealing member 51. The flange 5 1 a of the sealing member 51 is attached to the outer surface of the bottom wall 19 of the reaction chamber 1 and is attached. However, as shown in Fig. 5, the sealing is performed. The member 51 has an outer member 5 1 d attached to the outer surface (bottom surface) of the reaction chamber wall 19; the inner member 5 1 e attached to the inner surface (upper surface) of the reaction bottom wall 19 may also be Will add the cause of the E of the B. There is an outer side member 51d and an inner side member 51e at -15-200823439 when the cylinder block of the various cover thermoelectric shield thermal temperature measuring device 50b is not thermoelectrically opposed to the cover body, for example, the bottom chamber 1 of 1 A buffer portion 50b, a compression coil spring 53, and a piston 54 are disposed therebetween. In Fig. 5, the outer member 51d is formed in a container shape in which the buffer portion 50b is housed, and the inner member 5 1 e is formed in a ring shape surrounding the shroud thermoelectric pair 50, and the compression coil spring 53 and the piston 54 are tied to the outer member 5 1 d and the inner member 5 1 e are disposed in the bottom wall 19 of the reaction chamber 1. At this time, the portion of the compression coil spring 53 and the piston 54 surrounding the bottom wall 19 of the reaction chamber 1 also functions as a part of the sealing member 51. According to this configuration, it is possible to reduce the size of the sealing member 51 (the portion protruding from the bottom wall 19 of the reaction chamber 1 of the sealing member 51). Further, the insulating material 50e may be used, and the compression coil spring 53 and the piston 54 may be disposed between the outer member 51d and the bottom wall 19 of the reaction chamber 1, or may be disposed without using the outer member. The 50e is formed in a container shape, and the buffer portion 50b, the compression coil spring 53, and the piston 54 may be housed in the insulating material 50 e. Further, in the above embodiment, the compression coil spring is used as the spring member. However, the present invention is not limited thereto, and other springs such as a tension coil spring may be used. In the above embodiment, an application example in which the temperature of the semiconductor wafer is adjusted by heating of the heater will be described. However, the present invention is not limited thereto. For example, it may be applied to cooling by cold plate. The temperature of the wafer. Further, the object to be processed is not limited to a semiconductor wafer, and may be a glass substrate for FPD or the like. [Industrial Applicability] -16 - 200823439 The present invention can also be used after a CVD (Chemical Vapor Deposition) device for chemical substrate processing or a semiconductor substrate after (Chemical Oxide Removal) treatment. The heating device or the like may also be used for measuring the temperature of the temperature-measured body disposed in the container of the uranium gas atmosphere. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a wafer processing apparatus including a device according to an embodiment of the present invention. Figure 2 (a) is a cross-sectional view of the temperature measuring device, and a cross-sectional view of the thermoelectric pair of the second (b) cover. Fig. 3 is a view showing a modification of the buffer portion provided in the temperature measuring device. Fig. 4 is another mounting view of the processing container attached to the temperature measuring device. Fig. 5 is a view showing an example of a modification of a sealing member provided in a temperature measuring device. Fig. 6 is a mounting view of a process of mounting a thermoelectric pair of a shroud as a comparative example. - [Description of main component symbols] WO: Wafer processing apparatus 1 : Reaction chamber 2 : Process gas supply mechanism 3 : Decompression mechanism 4 : Receptor Membrane COR Heat body ring Temperature measurement is a protection pattern. Container-17- 200823439 5 : Temperature measuring device W: Wafer 1 1 : Post member 1 3 : Carrying in outlet 1 4 : Gate valve 1 9 : Bottom wall 40 : Heater _ 4 1 : Heater power supply 1 5 : Nozzle 1 6 : Diffusion space 1 7 : Discharge hole 1 8 : Exhaust port 31 : Exhaust pipe 32 : Exhaust device 2 1 : Process gas reservoir Φ 22 · · Catheter 23 : Mass flow controller • 24 : Valve 50 : Shield Thermoelectric pair 50b: buffer portion 5〇a: front end portion 5 1 : sealing member 54 : piston 5 3 : compression coil spring -18 200823439 5 5 : joint portion 50d : shield 5 〇 c : thermoelectric pair bus bar 50e : insulating material ( Inner member) 5 2 : Signal transmission portion 51a: flange portion 51b: cylinder portion 0 5 1 c : buffer accommodation portion 90: controller A: shield thermoelectric pair D: bottom wall portion C: telescopic tube R: diameter B: Loading table • -19-