TW521369B - Chamber with wafer temperature measurement capability and the measuring method - Google Patents

Abstract

The present invention discloses a chamber with wafer temperature measurement capability, which comprises a chamber body, a pedestal, and at least a lift pin, in which the pedestal is configured in the chamber body, which has a placing surface for placing a wafer, and the placing surface has at least a through-hole, and the lift pin is composed of the thermocouple, and is correspondingly configured in the through-hole to contact the back of the wafer for measuring the temperature, and further comprises a temperature reader, a control unit, and a gas supply, in which the temperature reader is coupled with the other end of the lift pin for reading the temperature of the wafer, the control unit is used to compare the temperature value, so that when the temperature is higher than a predetermined value, it will output a control signal to the gas supply to introduce gas into the chamber body for reducing the wafer temperature.

Description

521369 V. Description of the invention (1) Field of the invention: The present invention relates to a semiconductor process reaction chamber, and in particular, to a process chamber capable of measuring wafer temperature, in order to prevent wafers from chipping and reduce yield, and The wafer temperature is measured to monitor whether the process temperature is abnormal. Relevant technical description: In semiconductor equipment, in order to meet the needs of high-temperature processes, it is usually necessary to set a heating device in the process reaction chamber (chamber) to heat the wafer. When the reaction chamber is removed for subsequent cooling steps, the wafer is broken due to the large temperature difference, which causes losses. In order to further understand the background of the present invention, the following is a description of the wafer transfer process traditionally used in the South Wen | worm engraving process with reference to FIG. First, a first step S1 ′ is performed to take out a wafer from a front opening unified pod (FOUP) by a back-end robot arm (r 0 b 〇 t). Then, a second step S 2 is performed, and the wafer is transferred to a load lock of the cooling chamber to perform a vacuuming procedure. Next, the third step S3 is performed, and the wafer on the carrier is placed in the process chamber by the front-end robot arm. Subsequently, a fourth step S4 is performed to perform a high-temperature etching process. After the g-etching process, a fifth step 85 is performed, and the crystal g is produced by a robot arm. Finally, the sixth step S6 is performed to transfer the wafer to the cooling chamber.

To perform wafer cooling procedures. However, after the high-temperature etching process T is completed, the wafer temperature is quite high, for example, 2000 to 2500 or more. On the other hand, the temperature of the chamber is about 17 ° C. Therefore, a round-shaped stone, person% — cold mouth this M 111 Fu Da to the carrier of the cold room

0503-7191TWF; TSMC2001-1070; spin.ptd page 5 521369 V. Description of the invention (2) " '"---- Rishou, due to the excessively high temperature difference, the thermal stress caused by the wafer is reduced . ^ In view of this, the present invention provides a reaction chamber capable of measuring wafer temperature, including a reaction chamber body, a placing base, at least one top, a temperature reading device, a control unit, and a gas supply. Device. Where | put: the seat is set in the reaction chamber body to place a wafer. Constructed by a thermocouple Top = is set in a placement base to contact the back of the wafer to perform temperature densities, and the temperature value of the wafer is read by a temperature reading device to monitor whether the process or temperature is abnormal. Furthermore, the control unit is coupled to the temperature reading device == to compare the temperature value. The gas supply device is coupled to the reaction chamber body to reduce the temperature of the wafer by passing gas to the reaction chamber body to prevent wafer breakage and reduce the invention. SUMMARY OF THE INVENTION The object of the present invention is to provide a method and a measuring method for monitoring Anomalies in temperature can be prevented and a wafer process that can measure the temperature of the wafer is prevented from controlling the temperature of the wafer to prevent the process temperature from breaking. According to the above-mentioned object, the present invention provides a method for measuring the temperature of a wafer, including: a reaction chamber body; a placement seat disposed in the inverse μ = body, having a placement surface to place a wafer, and the placement surface It has a Ϊ I Γ through hole; at least one thimble is made of a thermocouple and is correspondingly set; in the through hole, the temperature is measured by contacting the back of the wafer; a temperature: η: coupled to the other end of the thimble To read the temperature value of the wafer; two = single 5, output a control signal when the temperature value is higher than a set value; hold the gas down, I horse is connected between the reaction chamber body and the control unit to 521369 V. Description of the invention (3) Receive control signals and pass gas to the reaction chamber body to reduce wafer temperature. In addition, it further includes a heating device disposed below the placement surface to heat the wafer. Among them, the temperature reading device is a thermocouple meter and the gas to be passed in is nitrogen. According to the above purpose, the present invention provides a method for measuring wafer temperature, which is applicable to a process reaction chamber capable of measuring wafer temperature, including the following steps: placing a wafer in the process reaction chamber to perform a Semiconductor process; semiconducting in ff? After the process, at least one thimble contacting the back of the wafer is used to enter the test. The thimble is composed of a thermocouple; read the temperature of the wafer; compare the temperature; when the temperature is higher than a set When the temperature is lower, a gas is passed into the process reaction chamber to reduce the temperature of the wafer; and when the temperature value is lower than a set value, the wafer is removed from the process reaction chamber. Among them, the upper conductor process is any one of a dry etching process, a deposition process, an oxidation process, and a diffusion process. Brief description of the drawings: In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible and easy to understand, the following specific preferred embodiments are described below, and in conjunction with the drawings, detailed descriptions are provided. Process diagram; Measurable wafer temperature measurable wafer temperature Figure 2 is a schematic diagram showing the structure of a process reaction chamber according to an embodiment of the present invention; Figure 3 is a process reaction chamber according to an embodiment of the present invention Block diagram.

0503-7191TWF; TSMC2001-1070; spin.ptd

521369

Fig. 4 of the measured wafer temperature is a flowchart showing a method and a wafer transfer according to an embodiment of the present invention. [Symbol description] 1 0 ~ reaction chamber body; 1 2 a ~ placement surface; 16 ~ wafer; 30 ~ control unit; C1 ~ control signal. Detailed description of the preferred embodiment: 1 2 ~ placement base; 1 4 ~ thimble; 20 ~ temperature reading device; 40 ~ air supply device; = lower port 2 to 4 illustrate measurable embodiments of the present invention Process reaction chamber for wafer temperature and method thereof. First, please refer to FIG. 2, which is a schematic diagram showing the structure of a reaction chamber capable of measuring i-yen / dish degree according to an embodiment of the present invention. The process reaction chamber of this embodiment includes a reaction chamber body 10, a placement base 12, three lift pins 14 and a temperature reading device 20. The placing base 12 is disposed in the reaction chamber body ο. The placement base 12 has a placement surface 12a for placing a wafer 6 to be subjected to a semiconductor process, and the placement surface 2a has two through holes (not shown). In addition, a heating device (not shown), such as a heating coil, is arranged under the placement surface to heat the wafer 16 according to the needs of the process. Next, three thimble pins 14 are correspondingly disposed in each through hole, and their function is to lift the wafer 16 off and load it onto the placement surface 12a. In addition, in this embodiment, since the ejector pin 14 is composed of a thermocouple, when the ejector pin 14 lifts the wafer 16 away from the placement surface 12a, it can contact the back surface of the wafer M to perform temperature measurement. Furthermore, a temperature reads the value of 20, for example, a

521369 V. Description of the invention (5) A thermocouple meter (thermocouple meter) is connected to the other end of the ejector pin 14 to read the temperature value of the wafer. In this way, the temperature of each wafer can be measured to monitor whether the process temperature is abnormal, so that maintenance can be performed to ensure the quality of the product. Next, referring to FIG. 3, a block diagram of a process reaction chamber capable of measuring wafer temperature according to an embodiment of the present invention is shown. In order to make the process reaction chamber of this embodiment further solve the problem of fragmentation caused by excessive temperature difference in the conventional method, the process reaction chamber of this embodiment further includes a control unit 30 and a gas supply device 40. This control unit 30 is coupled to the temperature reading device 20, and a set value is provided in the control unit 30 to compare with the temperature value of the temperature reading device 20, when the temperature value is higher than this When the value is set, a control signal C1 is output. Here, the size of the set value is determined according to the thermal stress that the wafer 1 f can withstand, that is, the safety value that the wafer 6 will not break due to excessive temperature differences in the subsequent cooling process. The gas supply device 搞 is connected between the reaction chamber body 10 and the control unit 30 to pass a purge gas (not shown) into the reaction chamber body 10 after receiving the control 4 Lu No. C1. , Such as nitrogen (Ns), to reduce the temperature of the wafer, as shown in the figure. Finally, please refer to FIG. 4, which illustrates a method for measuring wafer temperature and a wafer transfer flowchart according to an embodiment of the present invention, which is applicable to a process reaction chamber capable of measuring wafer temperature. First, the first step 3 is performed, and the wafer 16 is taken out of the front-opening wafer cassette (Fup) by a robot arm. Next, a second step 3, 2 is performed, and the wafer 6 is transferred to a loadlock in the cooling chamber to perform a vacuuming procedure.

521369 V. Description of the invention (6) Next, the third step S14 is performed, and the wafer 16 in the state of the previous manipulator is placed in the process chamber 10, and then the fourth step S16 is performed. , For-semiconductor processes, such as Bu. Engraving process. Here, although the remaining process is used as a model, it is limited to this, other high-temperature processes, such as a deposition process, can also be applied to the present invention. Right control and expansion After the high-temperature etching process is completed, the wafer 16 is lifted off the placement base 12 by a thermocouple ejector 14 to perform a fifth step. The temperature of the wafer 16 is measured by contacting the back surface of the wafer 16. At the same time, the temperature reading device 20 reads the temperature value of the wafer 16, such as a thermocouple. Next, the sixth step S20 is performed to compare the temperature value with the setting value in the control unit 30 by the control unit 30. When the temperature is higher than the set value, that is, the wafer 16 is overheated, the seventh step s 22 is performed, and the nitrogen process chamber body 10 is passed to reduce the temperature of the wafer 6. Then, the process returns to step S18 and step S20. When the temperature value is lower than the set value, stop introducing nitrogen gas to perform the eighth step S24, and move the wafer 16 out of the process by the previous robot arm, and the reaction chamber body 10 is transferred to the carrier of the cooling chamber for subsequent cooling process. . Of course, if the temperature value is lower than the set value in step S20, then step S24 is performed. Compared with the traditional process reaction chamber, the present invention uses a thermocouple as the top =, so wafer temperature measurement can be performed immediately after the process is completed, except that I monitor the process by measuring the results of each wafer In addition to whether the temperature is abnormal, when the wafer overheats after the process is completed, first

0503-7191W; TSMC2001-1070; spin.ptd Page 10 521369 V. Description of the invention (7) Pre-cooling treatment in situ (i η-situ), so that it will not occur due to excessive temperature difference in subsequent cooling Fragmentation can also improve yield. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make changes and retouching without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application.

0503-7191TWF; TSMC2001-1070; spin.ptd page 11

Claims (1)

521369 i. A process reaction chamber capable of measuring the temperature of a wafer, comprising: a reaction chamber body; a seat, which is not placed in the reaction chamber body, has a placement surface with a circle and an edge placement surface with at least one through hole; And at least the thimble is composed of a thermocouple and is correspondingly arranged in the through hole to contact the back surface of the wafer for temperature measurement. Port 2 = The private reaction chamber capable of measuring the temperature of the wafer as described in item 丨 of the patent application scope further includes a heating device disposed under the placement surface to heat the wafer. 3 · The process reaction chamber capable of measuring wafer temperature as described in item 1 of the patent application scope, further comprising: a temperature reading device coupled to the other end of the ejector pin for reading the temperature value of the wafer; A control unit that outputs a control signal when the temperature value is higher than a set value; and a gas supply device coupled between the reaction chamber body and the control unit to receive the control signal and pass a gas to The reaction chamber body reduces the wafer temperature. 4. The process for measuring the temperature of the wafer as described in item 3 of the scope of the patent application, wherein the temperature reading device is a thermocouple meter. 5 · The process reaction chamber capable of measuring wafer temperature as described in item 3 of the scope of patent application, wherein the gas is nitrogen. 6 · A method for measuring wafer temperature, suitable for process reaction chambers that can measure wafer temperature, including the following steps: 0503-7191TWF; TSMC200M070; spin.ptd page 12 521369 6. Scope of patent application: A wafer is placed in the process reaction chamber to perform-after the semiconductor process is completed, at least two top conductor processes are performed; the back side is used for temperature measurement, wherein the thimbles 、 T, f contact the crystal Round; and ... the temperature value of the wafer made by the galvanic couple. 7 · The wafer temperature measurement as described in item 6 of the scope of patent application, further including the following steps: The method of X is compared with the temperature value; when the temperature value is higher than a set value, a gas is passed to the switch Process the reaction chamber to reduce the temperature of the wafer; and, when the temperature value is lower than a set value, remove the wafer from the process reaction chamber. Wang 8 · The method for measuring wafer temperature as described in item 6 of the scope of patent application, wherein the semiconductor process is any of an etching process, a deposition process, an oxidation process, and a diffusion process. 9 · The method for measuring the temperature of the wafer as described in the patent application scope No. 6 (1), in which-the thermocouple: 2 takes the temperature 5 value of the wafer. 10 · The method for measuring the temperature of a wafer as described in item 7 of the scope of patent application, wherein the gas is nitrogen. 0503-7191TWF; TSMC2001-1070; spin.ptd 13th buy