TW200818549A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
TW200818549A
TW200818549A TW096124291A TW96124291A TW200818549A TW 200818549 A TW200818549 A TW 200818549A TW 096124291 A TW096124291 A TW 096124291A TW 96124291 A TW96124291 A TW 96124291A TW 200818549 A TW200818549 A TW 200818549A
Authority
TW
Taiwan
Prior art keywords
light
mounting surface
electrode
electrode pad
emitting element
Prior art date
Application number
TW096124291A
Other languages
English (en)
Inventor
Katsuyuki Okimura
Original Assignee
Nec Lighting Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Lighting Ltd filed Critical Nec Lighting Ltd
Publication of TW200818549A publication Critical patent/TW200818549A/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

200818549 九、發明說明: 本申請案係以2006年7月10日本專利申請案第2〇〇6_189493 號為優先權日基準,其所揭露的内容在此全部合併作為參考。 【發明所屬之技術領域】 本發明係關於包含安裝於陶瓷封裝中的發光元件的發光裝 置。 X 、 【先前技術】 壯署ϊίί裝於封裝中的發光紐(亦稱為「LED晶片」)的發光 所熟知。該封裝是由合成樹脂或是陶t所製造的。陶 咖低於合成綱輯阻,並可瓣地釋放出 使用陶瓷封裝的發光裝置構造大致上是 =空^咖晶片被包在合伽旨巾。為了== U =二大片、或是要在陶£封裝中安裝盡可能 裝表安裝表面。制矩形安 =5:^=^彡或是_形安裝表面,如此則會在ί 面積。中I大面積的無用空間,並減少_封裝中的有效安衷 面上在:之矩形的安裝表 要形成單一電極塾 ^ LED曰曰片於電極墊上。若 數個電極墊,則如_圖?θ ^成在整個安裝表面上。鲜形成複 要的最小空隙的電極塾設置於電極墊之間需 中選出的電極墊上。訊罢认+文衣LED曰日片51於從電極墊50其 緣。在任-纽巾,是絲作為電絕 &圖2中看出,矩形安裝表面具有四個 5 200818549 以電極墊50所覆蓋的角落。 ιϊ而,ί安裝表面(安裝空間)的形狀為矩形,那麼當填充 ^衣=間的板造合成樹脂隨著加熱及冷卻LED晶片而 ^收 呀,模造合成樹脂中成長的應力會集中在安、'’ 則易於導致模造合成樹脂脫落。^在女衣工間的角洛’如此 杳广立1 ΐί利申請案第2〇〇4_111937號揭露一種發光褒置,盆中陶 光反射器的周圍會露出’以防止填充陶瓷封裝中的】隙 空隙的内壁表面上的光反射器脫落。在這種ί 揭路的$絲置巾,歧能及喊底部皆以模造 隙』ίΓ本專利中請案第綱_111937號中的陶絲 作為安裝空間,具有非矩形的底面作為安裝 ^面。廷疋因為揭I於日本專利申請案第2004_111937號 ΐί=ί模造合成樹脂在安裝空間中的““ ===^模造合成樹脂祕的問題峨術。因此, ϋί 彡狀且f健在絲郎上形絲可能寬的 模造合成^蝴=^=^111937瞻輸防止 量取:此若樹脂的脫落娜 於脫落· 裳面積的尺寸,則模造合成樹脂變得易 的雜’ 成翻旨*麟,則安絲面必有無稜角 的形狀,例如圓形或是橢圓形。 夂月 【發明内容】 光元ίίϊΐ—目的為提供一種發光裝置,其具有即使在設有發 脫茨的構裝表面是矩形,還是能賴造合成樹脂較不易 脫1構造’因此能增加安裝面積的尺寸。 场 裝的上的’設置一種與本發明一致的包含陶曼封 豎“Ϊ定包括以矩形安裝表面及從安裝表面各邊 所疋義的女裝空間、安裝於安裝表面上之一電極墊、 200818549 •^裝=極墊上之一發光元件、及填充安裝空間的模造 角曰落二表面的㈣未以電極鍾蓋,且陶钱裝_1底i在 ,根據本㈣之發光裝置巾,模造合 喊底部。因此,模造合成樹脂接 ,洛t言強度大於模造合成樹脂在安裝表面其他區二 安裝雜的鑄模樹脂擴張或是收縮i, «從力集+在安裝空_角落’模造合成樹脂“ 實施方式】 置 以下將參照圖认到lc來描述根據本發明之實施例的發光裝 安裝:it】^ £ 發出綠光、發二。4 ===、發光元件G 光裝置會以純相加混合發^光簡本發日稽施例之發 ^ίϊϊ 3 3 元件R、G、Β是I裝4。發光 内’且底部表面3作為安裝表面 —衣工間2於側壁4之 七個電極墊形成在安裝表面3 性連接。明確而言,發光元件反安執才對的發光元件電 ^膠,電性連接於位在發光元件G 劑’例如 墊13g猎由連接電線電性連接於發光元…(未頒不)。電 件B安裳於雷搞埶牛G的上電極。發光元 女衣於电極墊14b之上,電極墊14b藉由電傳導黏著= 200818549 如Ag膠’電性連接於位在於 電極塾说藉由連接電線連i於發光元Cm極(未顯示)。 明確示於圖1A,安裝表面3星右 的上电極。如大部分 具有平坦的上表面。_,模造 1 模造合成樹脂30 成為殼形。根據所示之實施例的;表面可能會突出 同顏色光以制自光的發光元件數細來發出不 成樹脂3。中散佈-,讓單—發光树:光U模造合 鱗於模造合成樹脂3G中,藉由發光元件Β5=於散佈 發出綠光和紅光。發光元件Β 二f,發,可 的綠光還有紅絲製造出白光。』的▲歧所放佈_所發出 露出表=ir角落的喊底部是 H 的電極塾接觸’模造合成樹脂30在安裝表面3 =角洛直接接觸陶甍底部。比起電極塾(金屬),陶曼底& ΐίϊίίίϊ,安裝表面3的四個角落賴造合成樹脂的連^ ίϋΐ造合成樹脂在安絲面3其域中的連接強度ΐ 扠迈合成樹脂30在安裝空間2之中擴張及收縮,且1中 難•以ί 空間2的四個角落,模造合成樹脂30;然 為了要在安裝表面的四個角落露出陶瓷底部,電極,llr、 避開安裝表面的 又在所不的實施例中,發光元件B、G在上下表面皆具有電極, 且發光元件R在上表面具有兩個電極。無論如何,本發明亦適用 於包括複數個相同構造的發光元件被安裝在適合地方的發光裳 置’或是包括單一發光元件被安裝在適合地方的發光裝置。這也 2U0818549 =較佳的包圍發匕牛二以脂碎然而’ _ 波長,波照射時’销脂更不易才U匕為以温度變化及以短 為說日==殊===本發明較佳實施例時,此描述只作 神或是範_,^彰改請專植圍的精 【圖式簡單說明】 Ξ mi根?本發明之實施例之平面圖。 Ξ 3=;,,直線所得之_ 1:陶瓷封裝 2 :安裝空間 3 ·底部表面 4 =侧壁 10r :電極塾 llr :電極塾 12§ ·電極 13g ·電極塾 14b ··電極墊 15b :電極墊 20 :角落 3〇 :模造合成樹脂 50 ·電極塾 51 : LED晶片 9 200818549 R:發光元件 G:發光元件 B:發光元件

Claims (1)

  1. 200818549 十、申請專利範圍: i. 一種發光裝置,包含: 封裝,包括以—矩形安裝表面及從該安裝表面各邊欧 立之側土所形成的一安裝空間; 江 安裝於該安裝表面上之一電極墊·, 安裝於該電極墊上之一發光元件;及 ΐΐ該巧:空間之—模造合成樹脂; 该安裝表面包括未以該電極墊覆蓋的角落,以便使該陶 究魏之—_底部在該驗露出。 似於圍第1項之發光裝置,其中該安裝表面為類 尤兀件的平面形狀的矩形。 十一、圖式: 11
TW096124291A 2006-07-10 2007-07-04 Light-emitting device TW200818549A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006189493A JP2008021670A (ja) 2006-07-10 2006-07-10 発光装置

Publications (1)

Publication Number Publication Date
TW200818549A true TW200818549A (en) 2008-04-16

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ID=38918355

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Application Number Title Priority Date Filing Date
TW096124291A TW200818549A (en) 2006-07-10 2007-07-04 Light-emitting device

Country Status (5)

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US (1) US7508008B2 (zh)
JP (1) JP2008021670A (zh)
KR (1) KR20080005851A (zh)
CN (1) CN101106847A (zh)
TW (1) TW200818549A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008003971A1 (de) * 2008-01-11 2009-07-16 Ledon Lighting Jennersdorf Gmbh Leuchtdiodenanordnung mit Schutzrahmen
US8907482B2 (en) * 2012-11-08 2014-12-09 Honeywell International Inc. Integrated circuit package including wire bond and electrically conductive adhesive electrical connections
CN107331751A (zh) * 2017-07-06 2017-11-07 庞绮琪 能够延长led使用寿命的封装结构
CN107195757A (zh) * 2017-07-06 2017-09-22 庞绮琪 一种led封装结构
CN111727513A (zh) * 2018-02-26 2020-09-29 京瓷株式会社 电子部件搭载用封装件、电子装置以及电子模块

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61152046A (ja) 1984-12-26 1986-07-10 Fujitsu Ltd 半導体装置
JP3034814B2 (ja) 1997-02-27 2000-04-17 沖電気工業株式会社 リードフレーム構造及び半導体装置の製造方法
JP4407204B2 (ja) 2002-08-30 2010-02-03 日亜化学工業株式会社 発光装置
JP3878579B2 (ja) * 2003-06-11 2007-02-07 ローム株式会社 光半導体装置

Also Published As

Publication number Publication date
CN101106847A (zh) 2008-01-16
US20080006841A1 (en) 2008-01-10
KR20080005851A (ko) 2008-01-15
JP2008021670A (ja) 2008-01-31
US7508008B2 (en) 2009-03-24

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