M295795 八、新型說明： 【新型所屬之技術領域】 本新型是有關於一種高功率發光二極體，且特別是有 關於種具有良好散熱設計及反應速度的高功率發光二 極體。 【先前技術】 ® 近年來’發光二極體（light emitting di〇de; led)的應用 範圍持續擴大，已逐漸成為曰常生活中不可或缺的重要元 件，目％廣泛應用於汽車、通訊、消費性電子及工業儀表 等各種不同領域。由於傳統單顆LED亮度遠低於一般照明 需求’因此高功率LED藉著提高操作電流或將單顆ledM295795 VIII. New description: [New technical field] The present invention relates to a high-power light-emitting diode, and in particular to a high-power light-emitting diode having a good heat dissipation design and a reaction speed. [Prior Art] ® In recent years, the application range of 'light emitting diodes' (light emitting diodes) has continued to expand, and it has gradually become an indispensable important component in everyday life. It is widely used in automobiles, communications, Various fields such as consumer electronics and industrial instrumentation. Since the brightness of traditional single LEDs is much lower than the general lighting demand, high-power LEDs can increase the operating current or single-lead LEDs.
之晶粒面積放大，以符合照明使用所需。然而，增大[ED 晶粒面積雖可提高額定電流，卻相對衍生出散熱與發光效 率大幅降低的問題。由於大晶粒使用較大電流將使晶粒溫 _ 度升南，其所產生之熱量需自封裝體中有效導出，才能提 升光輸出功率，因此在使用設計上對基材的散熱考慮便十 、 分重要。 “ 傳統的LED封裝技術是將發光半導體元件固定於金 屬導線架或印刷電路板上加以運用，但由於金屬導線架及 印刷電路板的導熱性不佳，因此並不適用於高功率操作場 口。w參照第1圖，為一習知的發光二極體封裝結構。一 電極片110配置於一基材120底部，基材12〇上方配置一 導電墊130及一導電片14〇,導電墊13〇上方固定一發光 6 M295795 半導體元件150,並以—銲線 其中，此基…材質為絕緣體，由於 之導熱能力，需再搭配導熱材料將熱 :本身 ，雜度及成本。並且由於不同材料間熱^ 光效率其政熱效果亦有限，使得熱阻增加而大幅降低了發 因此，需要一種具有良好散熱效果的設計，可 低熱阻及製程複雜度，以達到降低成本並提昇高功率發光 一極體發光效率的目的。 【新型内容】 因此，本新型的目的就是在提供一種具有良好散献設 計的高功率發光二極體，用以改善傳統發光二極體於高功 率操作下，產生之大量熱量無法自封裝體中導出的缺點。 本新型的另-目的是在提供一種具有高導熱效果的 發光半導體元件基材設計，以改善因基材導熱性不佳所造 成之熱阻過高而影響光輸出功率的情形。 一本新型的又一目的是在提供一種與基材一次成型之 光學反應機構，以避免為了提高發光強度而衍生之製程複 雜度及生產成本的增加。 本新型的再一目的是提供一種兼具高導熱及高導電 放率的發光半導體元件基材設計，以解決發光半導體元件 於高功率操作下，額定電流提高產生之熱阻使反應速度變 慢的問題。 M295795 的述目的’心―種具有良好散熱設計 ^功率發光二極體。依照本新型_較佳實施例，此且有 ^好散熱設計的高功率發光：極體包含—散熱性佳的基 基材可為—導體散熱塊，例如-金屬材料。此基材 新型有—底部平坦且側壁傾斜之凹杯構造，根據本 凹杯構造可為圓弧形、錐形或其他適當 之形狀。此凹杯構造之内部表面可附著一高反射率物質， 二如：古：及其組成之族群，以作為反射器之用。此基材 接己置有-或多個導電插塞，係作為發光半導體元件之電 源接點，根據本新型之實施例，此導電插塞之材質為一導 2:例如銀、銅、銅合金、銅銀合金、鋁、鋁合金或其組 :^基材中配置有一或多個絕緣插塞鄰接導電插塞，係 作為基材與導電插塞間的電性絕緣，根據本新型之實施 例、，、邑緣插基至少包含_絕緣性材料，例如高分子材料、 陶刪或其他適當之絕緣性材料。一或多個發光半導體 兀件口疋於凹杯中’以導電插塞作為發光半導體元件之電 源接』iln或多條銲線電性連結發光半導體元件與基 ^將&光半導體①件之電極導引至基材與導電插塞底 P根據本新型之實施例，此發光半導體元件可依實際需 求配設成並聯或串聯形式。一包覆層填充於凹杯中並包覆 發光半導體元件及銲線，此包覆層之材料可為高分子填充 ㈣’例如環氧樹脂、石夕膠及樹脂。一保護層覆蓋於此包 覆層之上表面’此保護層之材料可為透光性材質，例如玻 璃或高透光性樹脂。根據本新型之實施例，此保護層可保 M295795 此保護層之外型 根據本新型之實 ’或將螢光粉混 護封裝結構内部及作為一聚光光學透鏡， 可為平板狀、平凸透鏡狀及雙凸透鏡狀。 鈀例，可於保護層之一面塗佈一螢光材質 合封填於高分子透光材質中。 因此，應用本新型可具有下列優點： 1·利用金屬基材形成之導體散熱塊，具有良好的散熱The grain area is enlarged to meet the lighting needs. However, increasing the [ED grain area can increase the rated current, but the relative heat dissipation and luminous efficiency are greatly reduced. Since the large crystal grains use a large current, the temperature of the crystal grains will rise to the south, and the heat generated by the large crystal grains needs to be effectively derived from the package to increase the light output power. Therefore, the heat dissipation consideration of the substrate in the design is considered. It is important. "The traditional LED packaging technology is to fix the light-emitting semiconductor components on metal lead frames or printed circuit boards. However, due to the poor thermal conductivity of the metal lead frames and printed circuit boards, it is not suitable for high-power operating field ports. Referring to Fig. 1, a conventional LED package structure is disposed. An electrode sheet 110 is disposed on a bottom of a substrate 120, and a conductive pad 130 and a conductive sheet 14 are disposed above the substrate 12, and the conductive pad 13 is disposed. A light-emitting 6 M295795 semiconductor component 150 is fixed on the top of the crucible, and the material is an insulator. Due to the thermal conductivity, the heat-conducting material needs to be combined with heat: itself, noise and cost. The thermal efficiency of the light is also limited, which increases the thermal resistance and greatly reduces the heat. Therefore, a design with good heat dissipation effect is required, which can reduce the thermal resistance and process complexity, thereby reducing the cost and improving the high-power illumination. The purpose of body luminous efficiency. [New content] Therefore, the purpose of the present invention is to provide a high-power light-emitting diode with a good design. It is used to improve the disadvantage that the large amount of heat generated by the conventional light-emitting diode under high power operation cannot be derived from the package. Another object of the present invention is to provide a light-emitting semiconductor device substrate design with high thermal conductivity effect, Improving the thermal output caused by poor thermal conductivity of the substrate and affecting the light output power. A further object of the present invention is to provide an optical reaction mechanism for molding once with a substrate to avoid increasing the luminous intensity. The process complexity and production cost are increased. A further object of the present invention is to provide a light-emitting semiconductor device substrate design with high thermal conductivity and high electrical conductivity, to solve the problem that the light-emitting semiconductor component is rated under high power operation. The heat resistance caused by the increase of the current causes the reaction speed to be slow. The purpose of the M295795 is that the 'heart' has a good heat dissipation design ^ power LED. According to the novel _ preferred embodiment, this has a good heat dissipation design. High-power illuminating: The polar body includes a heat-dissipating base substrate which can be a conductor heat sink, such as a metal material. - a concave cup structure with a flat bottom and a side wall inclined, which may be a circular arc shape, a conical shape or other suitable shape according to the concave cup structure. The inner surface of the concave cup structure may be attached with a high reflectivity substance, such as: ancient: And a group of constituents thereof for use as a reflector. The substrate is provided with one or more conductive plugs as power contacts for the light emitting semiconductor component, and according to an embodiment of the present invention, the conductive plug The material is a guide 2: for example, silver, copper, copper alloy, copper-silver alloy, aluminum, aluminum alloy or a group thereof: ^ one or more insulating plugs are arranged adjacent to the conductive plugs in the substrate, and are used as the substrate and the conductive plug The electrical insulation between the plugs, according to an embodiment of the present invention, the rim insert comprises at least an insulating material, such as a polymer material, a ceramic or other suitable insulating material. One or more light emitting semiconductor components In the concave cup, the conductive plug is used as the power connection of the light-emitting semiconductor component, or the plurality of bonding wires are electrically connected to the light-emitting semiconductor component and the electrode of the light-emitting semiconductor component is guided to the substrate and conductive. Plug bottom P according to this In a new embodiment, the light emitting semiconductor device can be configured in parallel or in series depending on actual needs. A cladding layer is filled in the concave cup and covers the light-emitting semiconductor element and the bonding wire. The material of the cladding layer may be filled with a polymer (4), such as epoxy resin, lycopene, and resin. A protective layer covers the upper surface of the cladding layer. The material of the protective layer may be a light transmissive material such as glass or a highly translucent resin. According to the embodiment of the present invention, the protective layer can protect the M295795 from the outer layer of the protective layer or the inside of the fluorescent powder-encapsulated package structure and as a collecting optical lens, which can be a flat-shaped, plano-convex lens. Shape and lenticular shape. For the palladium case, a fluorescent material can be coated on one side of the protective layer to seal the polymer transparent material. Therefore, the application of the novel can have the following advantages: 1. The heat sink block formed by the metal substrate has good heat dissipation.
，性，改善傳統基材因導熱性不佳影響光輸出功率的問 題。金屬的良好傳熱特性能有效將熱量自封裝體中導出， 使發光二極體於高功率操作下仍可_在適當溫度，更提 升光输出功率。 2.利用金屬材料製成之具有凹杯結構的基材，其光學 反應機構與基材-次成型，以金屬凹杯之傾斜側壁作為反 射器’並藉由兼具聚光光學透鏡功能與保護内部封裝結構 之雙重效果的保護層’可達到控制發光角度、提高發光強 度並降低製程複雜度及生產成本的目的。 3·利用金屬基材配合導電插塞及絕緣插塞的設計，具 有優異的高導熱及高導電效率，可改善發光半導體元件於 高功率操作之熱阻使反應速度變慢的問題’以確保良好的 發光效率。 【實施方式】 請參照第2圖’其繪示依照本新型一較佳實施例的一 種高功率發光二極體截面圖。本新型之高功率發光二極體 具有一基材210，此基材210可為一導體散熱塊，具高導 9 M295795 =及導電性，其材料可為-金屬材料，根據本新型之較 佳貝施例’此金屬材料可包含銀、銅、銅合金、銅銀合金、 鋁鋁口金及其組成之族群。此基材21()之上表㈣卜 凹杯構k 220，此凹杯構造22〇之底部平坦且側壁傾斜， 根據本新型之較佳實施例，此凹杯構造220可為圓孤形、 錐形或其他適當之形狀。根據本新型之-實施例，可選擇 於此凹杯構造22〇之内部表面以電鑛或其他方式附著—高 反射率物質作為反射器之用，例如銀、金及其組成之族 群。根據本新型之一實施例，此基材21〇之底部可盘一導 熱性材質接觸’藉由搭配大面積的導熱性材質與此基材 210的良好散熱性，更可以提升整體的降溫能力。 …此基材210中配置有—或多個導電插塞23()，作為發 光半導體7L件之電源接點。根據本新型之較佳實施例，此 導電插塞230之材質可為一導體，例如銀、銅、銅合金、 銅銀合金、銘、銘合金或其組合。 ^基材210中尚配置有一或多個絕緣插塞240鄰接於導 電插塞230,作為基材21〇與導電插塞23〇間的電性絕緣。 據本新型之較佳實施例，此絕緣插塞240至少包含一絕 緣ί!材料，例如玻璃；或高分子材料，例如塑膠；或陶竟 材料例如氧化鋁、氮化鋁及其組成之族群；或其他適當 之絕緣性材料。 、或多個發光半導體元件250固定於凹杯構造22〇 中導電插基230可作為發光半導體元件250之電源接 點，並以一或多條銲線26〇電性連結發光半導體元件25〇 M295795 與基材210,銲線260可將發光半導體元件25〇之電極導 引至基材210與導電插塞23〇之底部。根據本新型之較佳 實施例，此銲線260之材質可為銀、銘、金及其所組成之 知群。根據本新型之—實施例’此發光半導體元件25〇可 依實際需求配設成並聯或串聯形式。根據本新型之另一實 *•例！X光半導體元件250《電極可與一電路板之接腳電 極相通。 _ 填充材料填充於凹杯構造220中形成一包覆層 270,並包覆發光半導體元件25〇及銲線26〇。根據本新型 之較佳實施例，此包覆層270之材料可為一高分子填充材 料，例如環氧樹脂、矽膠及樹脂。依照本新型之一實施例， 此包覆層270可配合不同發光強度及色溫所需，將高分子 填充材料與螢光粉混合而形成一螢光粉膠體，填充於凹杯 構造220中，並可依實際需要調整螢光粉與高分子填充材 料的濃度。 臂 一保護層280覆蓋於此包覆層270之上表面，此保護 層280之材料可為透光性材質，例如玻璃或高透光性樹 脂。根據本新型之較佳實施例，此高透光性樹脂可包含環 氧樹脂（Epoxy)、聚苯乙浠（Polystyrene; PS)、丙烯晴-丁二 烯 _ 苯乙稀聚合物（Acrylonitrile-Butadene-Styrene; ABS)、 聚甲基丙稀酸甲酉旨（Polymethyl methacrylate; PMMA)、壓 克力（Acrylic resin)或石夕膠（Silicone)。此保護層可含有可被 發光半導體元件激發而發光之螢光粉材質，此螢光粉材質 可被發光半導體元件激發而發出紅色、黃色、綠色等可見 M295795 光。此保護層280可保護封裝結構内部，並可作為一聚光 光學透鏡，因λ ’保護層之外型可依不同需求設 平板狀、平凸透鏡狀及雙凸透鏡狀。根據本新型之一 例’可於保護層280之-面塗佈榮光材質，搭配其光= 鏡功能來提升發光強度及控制發光角度。 絕緣插塞的設計，除具有優異的高導熱及高導電效率，確 保良好的發光效率外，尚可依需求調整不同的導電插塞血 絕緣插塞之數量及配置方式，增加高功率發光二極體的岸 用範圍。最後，本新型以金屬材料製成具有凹杯結構的基 材，其光學反應機構與基材係一次成型，可降低製程之複 雜度，並以金屬凹杯之傾斜側壁作為反射器，再藉由兼具 由上述本新型較佳實施例可知，應用本新型具有下列 優點。首S ’本新型湘金屬作為基材的設計，充分運用 金屬材料之良好散熱特性’有效將熱量自封裝體中導出， 可使發光二極體於高功率操作下維持適#的溫度，以提升 光輸出功率。再者，本新型以導體散熱塊配合導電插塞及 光學透鏡功能與保護内部封裝結構之雙重效果的保護 層，來達到控制發光角度、提高發光強度並降低製程複雜 度及生產成本的目的。 雖然本新型已以一較佳實施例揭露如上，然其並非用 以限定本新型，任何熟習此技藝者，在不脫離本新型之精 神和範圍内，當可作各種之更動與潤飾，因此本新型之保 濩範圍當視後附之申請專利範圍所界定者為準。 12 M295795 【圖式簡單說明】 徵、優點與實施例 下： 為讓本新型之上述和其他目的、特 &更明所關式之詳細說明如 第1圖是習知的發光二極體截面圖。 弟2圖係繪示依照本新型一較佳實施例的一種高功率 lx光二極體截面圖。 12 0 :基材 140 :導電片 160 :銲線 220 :凹杯構造 240 :絕緣插寨 260 β•銲線 280 :保護層 【主要元件符號說明】 110:電極片 130 :導電塾 150 :發光半導體元件 21 〇 :基材 230 :導電插塞 25〇 :發光半導體元件 27〇 :包覆層 13, the problem of improving the light output power of traditional substrates due to poor thermal conductivity. The good heat transfer characteristics of the metal effectively deduct heat from the package, so that the light-emitting diode can still increase the light output power at a suitable temperature under high power operation. 2. A substrate made of a metal material having a concave cup structure, the optical reaction mechanism and the substrate are sub-formed, and the inclined side wall of the metal concave cup is used as a reflector' and functions and protection by combining the concentrating optical lens The double-effect protective layer of the internal package structure can achieve the purpose of controlling the illumination angle, improving the illumination intensity, and reducing the process complexity and production cost. 3. Using metal substrate with conductive plug and insulating plug design, it has excellent high thermal conductivity and high electrical conductivity, which can improve the thermal resistance of light-emitting semiconductor components in high-power operation and slow down the reaction speed. Luminous efficiency. [Embodiment] Referring to Figure 2, a cross-sectional view of a high power light emitting diode in accordance with a preferred embodiment of the present invention is shown. The high-power light-emitting diode of the present invention has a substrate 210, which can be a heat-dissipating block of a conductor, having a high conductivity of 9 M295795 and conductivity, and the material thereof can be a metal material, preferably according to the present invention. Shell's example 'This metal material can contain silver, copper, copper alloy, copper-silver alloy, aluminum-aluminum gold and its constituents. The base material 21 () has a concave cup configuration k 220, the bottom of the concave cup structure 22 is flat and the side wall is inclined. According to a preferred embodiment of the present invention, the concave cup configuration 220 can be a circular orphan shape. Cone or other suitable shape. In accordance with an embodiment of the present invention, the inner surface of the concave cup configuration 22 can be selected to be electrically or otherwise adhered to a high reflectivity material as a reflector, such as a group of silver, gold, and the like. According to an embodiment of the present invention, the bottom of the substrate 21 can be in contact with a heat-conductive material. By combining the large-area heat-conductive material with the heat-dissipating property of the substrate 210, the overall cooling ability can be improved. ...the substrate 210 is provided with - or a plurality of conductive plugs 23 () as power supply contacts for the light-emitting semiconductor 7L. According to a preferred embodiment of the present invention, the conductive plug 230 may be made of a conductor such as silver, copper, a copper alloy, a copper-silver alloy, an inscription alloy, or a combination thereof. The substrate 210 is further provided with one or more insulating plugs 240 adjacent to the conductive plugs 230 as electrical insulation between the substrate 21A and the conductive plugs 23A. According to a preferred embodiment of the present invention, the insulating plug 240 comprises at least an insulating material such as glass; or a polymer material such as plastic; or a ceramic material such as alumina, aluminum nitride and a group thereof; Or other suitable insulating material. Or the plurality of light emitting semiconductor components 250 are fixed in the concave cup structure 22 , wherein the conductive plug base 230 can serve as a power contact of the light emitting semiconductor component 250 and electrically connect the light emitting semiconductor component 25 〇 M295795 with one or more bonding wires 26 . With the substrate 210, the bonding wires 260 can guide the electrodes of the light-emitting semiconductor device 25 to the bottom of the substrate 210 and the conductive plugs 23A. According to a preferred embodiment of the present invention, the wire 260 may be made of silver, gold, gold, and the like. According to the present invention, the light-emitting semiconductor element 25 can be arranged in parallel or in series depending on actual needs. According to another example of this novel *• example! The X-ray semiconductor component 250 "electrode can be in electrical communication with a pin of a circuit board. The filling material is filled in the concave cup structure 220 to form a cladding layer 270, and covers the light emitting semiconductor element 25 and the bonding wire 26A. According to a preferred embodiment of the present invention, the material of the cladding layer 270 may be a polymer filler such as an epoxy resin, a silicone resin, and a resin. According to an embodiment of the present invention, the cladding layer 270 can be mixed with the fluorescent powder to form a phosphor powder colloid, which is filled in the concave cup structure 220, and is required to meet different luminous intensity and color temperature. The concentration of the fluorescent powder and the polymer filling material can be adjusted according to actual needs. The arm-protective layer 280 covers the upper surface of the cladding layer 270. The material of the protective layer 280 may be a translucent material such as glass or a highly translucent resin. According to a preferred embodiment of the present invention, the high light transmissive resin may comprise an epoxy resin (Epoxy), a polystyrene (PS), an acrylonitrile-butadiene styrene polymer (Acrylonitrile-Butadene). -Styrene; ABS), Polymethyl methacrylate (PMMA), Acrylic resin or Silicone. The protective layer may contain a phosphor material that is excited by the light-emitting semiconductor element to emit light, and the phosphor material may be excited by the light-emitting semiconductor element to emit red, yellow, green, etc., visible M295795 light. The protective layer 280 can protect the inside of the package structure and can be used as a concentrating optical lens. The λ ' protective layer can be formed into a flat shape, a plano-convex lens shape and a lenticular lens shape according to different requirements. According to an example of the present invention, the glory material can be coated on the surface of the protective layer 280, and the light=mirror function can be used to enhance the luminous intensity and control the illumination angle. Insulation plug design, in addition to excellent high thermal conductivity and high electrical conductivity, to ensure good luminous efficiency, can also adjust the number and configuration of different conductive plug blood insulation plugs according to demand, increase high-power light-emitting diode The shore range of the body. Finally, the novel material is made of a metal material with a concave cup structure, and the optical reaction mechanism and the substrate are formed at one time, which can reduce the complexity of the process, and use the inclined sidewall of the metal concave cup as a reflector, and then It can be seen from the above preferred embodiments of the present invention that the application of the present invention has the following advantages. The first S 'this new type of Xiang metal as the substrate design, making full use of the good heat dissipation characteristics of the metal material 'effectively deriving heat from the package body, can enable the light-emitting diode to maintain the temperature of the # under high-power operation to enhance Light output power. Furthermore, the present invention achieves the purpose of controlling the illumination angle, improving the illumination intensity, and reducing the process complexity and production cost by using a conductor block with a conductive plug and an optical lens function and a protective layer for protecting the internal package structure. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the present invention, and it is to be understood that those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. The scope of the new type of protection is subject to the definition of the scope of the patent application. 12 M295795 [Simple description of the drawings] The following is a detailed description of the above-mentioned and other objects, the details of the present invention, as shown in Fig. 1 is a conventional light-emitting diode cross section. Figure. Figure 2 is a cross-sectional view of a high power lx photodiode according to a preferred embodiment of the present invention. 12 0 : substrate 140 : conductive sheet 160 : bonding wire 220 : concave cup structure 240 : insulating plug 260 β • bonding wire 280 : protective layer [main component symbol description] 110 : electrode sheet 130 : conductive 塾 150 : light emitting semiconductor Element 21 基材: Substrate 230: Conductive plug 25 〇: Light-emitting semiconductor element 27 〇: cladding layer 13