GB2420221A - Semiconductor light emitting diode package with heat sink - Google Patents
Semiconductor light emitting diode package with heat sink Download PDFInfo
- Publication number
- GB2420221A GB2420221A GB0424976A GB0424976A GB2420221A GB 2420221 A GB2420221 A GB 2420221A GB 0424976 A GB0424976 A GB 0424976A GB 0424976 A GB0424976 A GB 0424976A GB 2420221 A GB2420221 A GB 2420221A
- Authority
- GB
- United Kingdom
- Prior art keywords
- light emitting
- heat sink
- semiconductor light
- emitting device
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000004033 plastic Substances 0.000 claims abstract description 6
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims abstract description 6
- 239000011347 resin Substances 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A solid-state semiconductor light emitting device is disclosed. A heat sink 30 that comprises a receiving cup 31 for receiving a chip 50 is provided. A leadframe 40 that comprises a connection base 47 is mounted above the heat sink 30, wherein the chip 50 is connected to the leadframe 40 via a metal wire and a resin or silicone is applied to cover all of them so as to form the a light emitting device that emits light. In the leadframe 40, two holders 41,43 that include two top sides on their two top portions are opposite to one another, and a holder 45 having holes 46 is mounted between these two top sides. The holder 45 having the holes 46 is connected to one of these two opposite holders 41,43. A plastic material is applied to mold the three holders 41,43,45 into the connection base 47 for receiving the receiving cup 31 of the heat sink 30. As a result, the heat sink 30 provides good heat-dissipating efficacy and each holder 41,43,45 of the leadframe 40 also provides heat-dissipating efficacy and enhances connection stability as well.
Description
SOLID-STATE SEMICONDUCTOR LIGHT EMITTING
DEVICE
FIELD OF THE INVENTION
The present invention relates to a solid-state semiconductor light emitting device that provides with good heat-dissipating efficacy and enhances connection stability, and more particularly, to a solid-state semiconductor light emitting device that is suitable for a light emitting diode (LED) or the like.
BACKGROUND OF THE INVENTION
In general, photometric efficiency of an LED is inversely proportional to the junction temperature of the LED. A major concern of the LED package designer is keeping the die cool to be lower than the junction temperature. In the conventional LED, the chip is mounted at the base of a concave cup (i.e. optical cavity) of one conducting wire and connected to another conducting wire via a connection wire. Accordingly, the packaged die will be damaged easily as a result of thermal stress.
In view of above conventional drawbacks, U.S. Pat. No. 6,274,924 entitled "surface mountable led package" discloses a structure, as shown in FIG. 1. In this structure, a heat sink 10 includes an optional reflective cup 14. The insert-molded leadframe 12 is a filled plastic material molded around a metal frame that provides an electrical path. The light emitting diode die 16 is mounted indirectly via a heat-conducting subbracket 18 to the heat sink 10. Connection wires extend from the LED 16 and the heat-conducting subbracket 18 to metal wires on leadframe 12 that are electrically and thermally isolated from the heat sink 10.
An optical lens 20 may be added by mounting a pre-molded
I
thermoplastic lens and an encapsulant or by casting epoxy to cover the LED.
Although the above structure can separate electricity and heat from one another to prevent the die from heat, its composition is very complicated. Accordingly, the present inventor has been made diligent studies with a quiet mind to design and fabricate a solid-state semiconductor light emitting device that provides with simplified composition in which electricity and heat are not separated from one another. The heatdissipating area is increased by means of a plurality of holders of a leadframe in addition to the use of the heat sink for dissipating heat. Holders are also applied to enhance connection stability between the solid-state semiconductor light emitting device and a circuit board. This solid-state semiconductor light emitting device is provided for the public in accordance with motivations of the present invention.
SUMMARY OF THE INVENTION
The main purpose of the present invention is to provide a solid-state semiconductor light emitting device that includes simplified composition, wherein the electricity and the heat are not separated from one another.
Another purpose of the present invention is to provide a solid-state semiconductor light emitting device that increases heat-dissipating area and enhances connection stability.
In order to achieve the aforementioned purposes, the present invention comprises a heat sink, a chip, a leadframe, and a resin or silicone that covers all of them, wherein a receiving cup is mounted on the center portion of the heat sink for receiving the chip. In addition, the chip is connected to the heat sink via a heat-conducting bracket. In the leadframe, two holders that include two top sides on their two top portions are opposite to one another, and a holder that includes holes on a center portion thereof is mounted between these two top sides. The holder having the holes on the center portion thereof is connected to one of these two opposite holders in a random position. These three holders are connected to one another by using a plastic material. The connection base is formed by molding the plastic material. The receiving cup of the heat sink is received by the connection base of the leadframe and the chip is connected to the leadframe via a metal wire. Next, the resin or silicone covers all of them so as to complete a light emitting diode that emits light. As a result, the heat sink provides with good heatdissipating efficacy and each holder of the leadframe also provides with heat-dissipating efficacy and enhances the connection stability as well.
The other features and preferred embodiments of the present invention will now be described with reference to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a perspective, decomposed view showing devices of a conventional light emitting diode.
FIG. 2 is a perspective, decomposed view showing a preferred embodiment of the present invention.
FIG. 3 is a top view shows a heat sink of the present invention connects with a leadframe.
Fig. 4 is a cross-section view taken along the line A-A of FIG. 3.
Fig. 5 is a cross-section view taken along the line B-B of FIG. 3.
Fig. 6 is a cross-section view taken along the line C-C of FIG. 2.
FIG. 7a through FIG. 7c shows illustrations of the present invention that couples with a circuit board.
FIG. 8 is a bottom view showing the preferred embodiment of the present invention.
FIG. 9 is a bottom view showing another illustration of the preferred embodiment of the present invention.
JETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring to FIG. 1 and FIG. 2, the present invention mainly comprises a heat sink 30, a leadframe 40, a chip 50, and a heat-conducting bracket 51. Next, all of them are covered by resin or silicone (not shown) to form a light emitting diode. The heat sink 30 is made of a heat-conducting material selected from the group consisting of pure materials, compounds, and composites of copper, silicon, aluminum, molybdenum, aluminum oxide, aluminum nitride, and beryllium. Alternatively, composites of molybdenumcopper and tungsten-copper may be used. Receiving cup 31 projects upwardly from the center portion of the heat sink for receiving the optional heat-conducting bracket 51 and the chip 50.
The leadframe 40 is formed by arranging a first holder 41, a second holder 43, and a third holder 45, and coupling them with a connection base 47, which is made of a molded plastic material.
As shown in FIG. 6, the first holder 41 and the second holder 43 are identical in structure, wherein each of them have two legs, and cambered sides 42 and 44 that respectively connect these two legs are mounted on the top portions thereof. The cambered sides 42 and 44 of the first holder 41 and the second holder 43, which are opposite to one another, are mounted on the mold. In addition, the third holder 45 on which center holes 46 are formed is arranged on the mold in a position between these two cambered sides 42 and 44.
At the same time, either the first holder 41 or the second holder 43 is connected to the third holder 45 in a random position. A plurality of protrusions are mounted on the mold such that the leadframe 40 that includes the connection base 47 is completed when the plastic material is molded, wherein a plurality of through holes are mounted on the connection base 47 for exposing the holders 41, 43, and 45.
Referring to FIG. 4 and FIG. 5, during the connecting operation, the heat sink 30 plugs into the Ieadframe 40 in a bottom-up direction so as to enable the receiving cup 31 to plug into the holes 46 of the third holder 45. The chip 50 that mounts inside the receiving cup 31 is connected to the first holder 41 and the second holder 43 or the third holder 45 via a metal wire by using the preformed through holes on the connection base 47. In addition, the resin or silicone (not shown) covers all of the heat sink 30, the leadframe 40, the chip 50, and the metal wire to compete the manufacture of the light emitting diode. When the light emitting diode is coupled with a circuit board 60, the third holder 45 on front and rear sides enhances the connection stability besides the use of the first holder 41 and the second holder 43 on right and left sides for connection. When the third holder 45 couples with the circuit board 60, the third holder 45 may welds on the surface of the circuit board 60 or passes through the circuit board 60 for directly welding with the circuit board 60. Besides, the terminals of the third holder 45 may be bent when the third holder 45 passes through the circuit board 60, as shown in FIGs.
7a, 7b, and 7c.
If it is electrified for use, the heat generated by the chip 50 and the metal wire will be released through the heat-conducting bracket 51 and the heat sink 30. As shown in FIG. 9, a protrusion 32, which is arranged in the form of homocentrjc circles, is mounted on the bottom portion of the heat sink 30 so as to increase the temperature gradient of surface. Referring to FIG. 8, a protrusion 32 that radiates from the center of a circle is mounted on the bottom portion of the heat sink 30. It is demonstrated from the experiments that the protrusion 32 can increase the surface temperature gradient. As a result, the heat sink is able to provide the best heat-dissipating efficacy.
According to the above description, it is apparent that the apparatus of the present invention comprises the following advantages: 1. It is able to simplify composition, and the good heat-dissipating efficacy can be achieved even if the electricity and the heat are not separated from one another. Thus, the efficacy of the chip is not influenced.
2. By using the holders of the leadframe, its connection can be steadier and the surface area for dissipating the heat can be increased.
3. The third holder mounted inside the leadframe can be cut off according to customer's requirements.
The embodiments described above are given by way of example only, and further modifications will be apparent to persons skilled in the art without departing from the scope of the invention as defined by the appended claims.
As described above, the present invention is able to achieve the expected purpose of the present invention by providing with a solid-state semiconductor light emitting device. The application that complies with utility is therefore submitted for a patent.
Claims (7)
- Claims I. A solid-state semiconductor light emitting device comprising: aheat sink having a receiving cup that projects from a center of said heat sink for receiving a chip; and a leadframe, in which two holders having two top sides on two top portions thereof are opposite to one another and a holder having holes is mounted between said two top sides, wherein said holder having said holes is connected to one of said two opposite holders, and a plastic material is applied to mold said three holders into a connection base for receiving said receiving cup of said heat sink; thereby said chip is connected to said leadframe via a metal wire and a resin or silicone are applied to cover all of them so as to form said solid-state semiconductor light emitting device that has good heatdissipating efficacy and can enhance connection stability.
- 2. The solid-state semiconductor light emitting device of claim I, wherein a plurality of through holes are mounted on said connection base for exposing said three holders.
- 3. The solid-state semiconductor light emitting device of claim I, wherein a protrusion is mounted on said bottom surface of said heat sink.
- 4. The solid-state semiconductor light emitting device of claim 3, wherein said protrusion is in the form of radiation.
- 5. The solid-state semiconductor light emitting device of claim 3, wherein said protrusion is arranged in the form of homocentrjc circles.
- 6. The solid-state semiconductor light emitting device of claim 1, wherein said holder having said holes is connected to one of said two opposite holders in a random position.
- 7. A solid-state semiconductor light emitting device substantially as hereinbefore described with reference to Figures 2 to 8 or Figure 9 of the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0424976A GB2420221B (en) | 2004-11-12 | 2004-11-12 | Solid-state semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0424976A GB2420221B (en) | 2004-11-12 | 2004-11-12 | Solid-state semiconductor light emitting device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0424976D0 GB0424976D0 (en) | 2004-12-15 |
| GB2420221A true GB2420221A (en) | 2006-05-17 |
| GB2420221B GB2420221B (en) | 2009-09-09 |
Family
ID=33523601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0424976A Expired - Fee Related GB2420221B (en) | 2004-11-12 | 2004-11-12 | Solid-state semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2420221B (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1914085A1 (en) * | 2006-10-18 | 2008-04-23 | Seiko Epson Corporation | Light emitting device, method of manufacturing light emitting device, and ink jet recording apparatus |
| EP2202809A1 (en) * | 2007-10-15 | 2010-06-30 | Foshan Nationstar Optoelectronics Co., Ltd | A structure of heat dissipation substrate for power led and a device manufactured by it |
| USD633631S1 (en) | 2007-12-14 | 2011-03-01 | Cree Hong Kong Limited | Light source of light emitting diode |
| USD634863S1 (en) | 2008-01-10 | 2011-03-22 | Cree Hong Kong Limited | Light source of light emitting diode |
| US8049230B2 (en) | 2008-05-16 | 2011-11-01 | Cree Huizhou Opto Limited | Apparatus and system for miniature surface mount devices |
| US8362605B2 (en) | 2006-04-26 | 2013-01-29 | Cree Huizhou Opto Limited | Apparatus and method for use in mounting electronic elements |
| US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
| US8367945B2 (en) | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
| US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
| US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
| US8669572B2 (en) | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
| US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
| US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
| US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
| US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
| US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
| US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
| US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
| US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376902B1 (en) * | 1997-07-29 | 2002-04-23 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic structural element |
| JP2003303936A (en) * | 2002-04-12 | 2003-10-24 | Matsushita Electric Ind Co Ltd | Lead frame and manufacturing method thereof, and chip type led employing the lead frame |
| US20040075100A1 (en) * | 2001-04-10 | 2004-04-22 | Georg Bogner | Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component |
| EP1469707A2 (en) * | 2003-04-14 | 2004-10-20 | Integral Technologies, Inc. | Lighting circuits manufactured from conductive loaded resin-based materials |
-
2004
- 2004-11-12 GB GB0424976A patent/GB2420221B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376902B1 (en) * | 1997-07-29 | 2002-04-23 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic structural element |
| US20040075100A1 (en) * | 2001-04-10 | 2004-04-22 | Georg Bogner | Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component |
| JP2003303936A (en) * | 2002-04-12 | 2003-10-24 | Matsushita Electric Ind Co Ltd | Lead frame and manufacturing method thereof, and chip type led employing the lead frame |
| EP1469707A2 (en) * | 2003-04-14 | 2004-10-20 | Integral Technologies, Inc. | Lighting circuits manufactured from conductive loaded resin-based materials |
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8669572B2 (en) | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
| US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
| US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
| US8362605B2 (en) | 2006-04-26 | 2013-01-29 | Cree Huizhou Opto Limited | Apparatus and method for use in mounting electronic elements |
| US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
| US8367945B2 (en) | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
| US7950796B2 (en) | 2006-10-18 | 2011-05-31 | Seiko Epson Corporation | Light emitting device, method of manufacturing light emitting device, and ink jet recording apparatus |
| US8220916B2 (en) | 2006-10-18 | 2012-07-17 | Seiko Epson Corporation | Light emitting device, method of manufacturing light emitting device, and ink jet recording apparatus |
| US8882257B2 (en) | 2006-10-18 | 2014-11-11 | Seiko Epson Corporation | Light emitting device, method of manufacturing light emitting device, and ink jet recording apparatus |
| EP1914085A1 (en) * | 2006-10-18 | 2008-04-23 | Seiko Epson Corporation | Light emitting device, method of manufacturing light emitting device, and ink jet recording apparatus |
| US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
| EP2202809A1 (en) * | 2007-10-15 | 2010-06-30 | Foshan Nationstar Optoelectronics Co., Ltd | A structure of heat dissipation substrate for power led and a device manufactured by it |
| EP2202809A4 (en) * | 2007-10-15 | 2013-03-20 | Foshan Nationstar Optoelectronics Co Ltd | A structure of heat dissipation substrate for power led and a device manufactured by it |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
| US10892383B2 (en) | 2007-10-31 | 2021-01-12 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| USD633631S1 (en) | 2007-12-14 | 2011-03-01 | Cree Hong Kong Limited | Light source of light emitting diode |
| USD662902S1 (en) | 2007-12-14 | 2012-07-03 | Cree Hong Kong Limited | LED package |
| USD634863S1 (en) | 2008-01-10 | 2011-03-22 | Cree Hong Kong Limited | Light source of light emitting diode |
| USD656906S1 (en) | 2008-01-10 | 2012-04-03 | Cree Hong Kong Limited | LED package |
| USD671661S1 (en) | 2008-01-10 | 2012-11-27 | Cree Hong Kong Limited | LED package |
| US8049230B2 (en) | 2008-05-16 | 2011-11-01 | Cree Huizhou Opto Limited | Apparatus and system for miniature surface mount devices |
| US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
| US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
| US9722158B2 (en) | 2009-01-14 | 2017-08-01 | Cree Huizhou Solid State Lighting Company Limited | Aligned multiple emitter package |
| US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
| US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
| US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
| US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
| US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0424976D0 (en) | 2004-12-15 |
| GB2420221B (en) | 2009-09-09 |
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Effective date: 20201112 |