CN107331751A - 能够延长led使用寿命的封装结构 - Google Patents

能够延长led使用寿命的封装结构 Download PDF

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CN107331751A
CN107331751A CN201710544790.3A CN201710544790A CN107331751A CN 107331751 A CN107331751 A CN 107331751A CN 201710544790 A CN201710544790 A CN 201710544790A CN 107331751 A CN107331751 A CN 107331751A
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led
substrate
encapsulating structure
encapsulated layer
light source
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庞绮琪
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
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Abstract

能够延长LED使用寿命的封装结构，其特征是所述LED的封装结构包括基板、LED光源和封装层、所述基板包括侧壁与封闭的顶部，所述LED光源安装于基板内部的两相对侧壁上，所述LED光源包括发光面，与发光面相对的底面，连接发光面与底面的两个相互平行的对侧面，在两对侧面分别设置有用于连接正电极引脚和负电极引脚的两个焊接接口，所述焊接接口与所述基板相焊接。

Description

能够延长LED使用寿命的封装结构
技术领域
本发明涉及LED封装结构。
背景技术
LED的封装技术就是对LED芯片进行封装，制成可直接使用的光源。目前常见的LED封装结构为将LED芯片固定在一个平面的基板上，然后在基板的一个平面上利用封装层将该LED芯片封装在该基板上。虽然LED总体寿命尚可，但在对其进行改进的过程中，如何优化其封装结构，从而延长LED的使用寿命成为现有技术中亟待解决的问题。
发明内容
为解决前述技术问题，本发明采用了以下技术方案：提供了能够延长LED使用寿命的封装结构，其特征是所述LED的封装结构包括基板、底面设有电极的LED芯片及LED芯片顶部和侧面的封装层，所述基板包括保护板与封闭层，所述封装层的侧面和底面为反射面，所述反射面采用CVD技术溅射金属银。
所述的能够延长LED使用寿命的封装结构，其特征是所述反射面是自封装层的底部延伸至侧面的反射曲面或反射平面。
所述的能够延长LED使用寿命的封装结构，其特征是所述反射面是通过在封装层的内壁CVD金属银制得。
所述的能够延长LED使用寿命的封装结构，其特征是所述封装层是为透明的聚甲基丙烯酸甲酯透明胶体。
所述能够延长LED使用寿命的封装结构，其特征是按照以下步骤进行封装
1)提供LED芯片、金属线、绝缘胶、荧光胶、盖封胶及支架，在支架上方形成有用于LED芯片的安置孔；
2)将绝缘胶点在安置孔中，在放入LED芯片固定；
3)加入支架至100℃～120℃持续240min-360min；
4)将金属线两端分别与LED芯片和支架连接，并使其相导通；
5)荧光胶点入安置孔的底部，至胶面安置孔口部平齐；
6)烘烤温度为130-155℃，烘烤时间设为90min～180min；
7)将支架的顶部插入模具内，并进行烘烤，烘烤温度为140～155℃，烘烤时间设为75min-95min，结束后自然冷却，将支架从模具上取出，制得采用能够延长LED使用寿命的封装结构的LED产品。
本发明提供的能够延长LED使用寿命的封装结构，与现有技术相比，通过改进LED封装结构，优化处理过程，能够显著的延长LED封装结构的使用寿命，解决了现有技术中存在的问题。
具体实施方式
本发明提供的能够延长LED使用寿命的封装结构，所述LED的封装结构包括基板、底面设有电极的LED芯片及LED芯片顶部和侧面的封装层，所述基板包括保护板与封闭层，所述封装层的侧面和底面为反射面，所述反射面采用CVD技术溅射金属银。反射面是自封装层的底部延伸至侧面的反射曲面或反射平面。通过在封装层的内壁CVD金属银制得。
所述的能够延长LED使用寿命的封装结构，其特征是所述封装层是为透明的聚甲基丙烯酸甲酯透明胶体。
所述能够延长LED使用寿命的封装结构，其特征是按照以下步骤进行封装
1)提供LED芯片、金属线、绝缘胶、荧光胶、盖封胶及支架，在支架上方形成有用于LED芯片的安置孔；
2)将绝缘胶点在安置孔中，在放入LED芯片固定；
3)加入支架至100℃～120℃持续240min-360min；
4)将金属线两端分别与LED芯片和支架连接，并使其相导通；
5)荧光胶点入安置孔的底部，至胶面安置孔口部平齐；
6)烘烤温度为130-155℃，烘烤时间设为90min～180min；
7)将支架的顶部插入模具内，并进行烘烤，烘烤温度为140～155℃，烘烤时间设为75min-95min，结束后自然冷却，将支架从模具上取出，制得采用能够延长LED使用寿命的封装结构的LED产品。
实施例1～4的具体工艺参数见下表
寿命测试
将实施例1～4制得的LED各取100只分别进行额定电压下的寿命测试，偏差结果如下表
实施例号 1 2 3 4
寿命/h 78189 795941 812894 792164
实验结果表明，采用本发明的能够延长LED使用寿命的封装结构封装的LED，其光照强度偏差≤5％，寿命偏差≤2％，具有良好的产品一致性和通用性。

Claims (2)

1.能够延长LED使用寿命的封装结构，其特征是所述LED的封装结构包括基板、LED光源和封装层、所述基板包括侧壁与封闭的顶部，所述LED光源安装于基板内部的两相对侧壁上，所述LED光源包括发光面，与发光面相对的底面，连接发光面与底面的两个相互平行的对侧面，在两对侧面分别设置有用于连接正电极引脚和负电极引脚的两个焊接接口，所述焊接接口与所述基板相焊接。
2.如权利要求1所述能够延长LED使用寿命的封装结构，其特征是按照以下步骤进行封装
1)将LED光源置于封装层的成型模具的型腔中，
2)将液态的封装层注入该成型模具的型腔中，使液态的封装层固化成型，打开所述成型模具的型腔；
3)将固定有LED芯片的封装层进行烘烤，烘烤温度为115～135℃，烘烤时间设为200min～300min；
4)将分别用于连正电引脚和负电引脚的金线一端焊接在对侧面的两个焊接接口上，另一端焊接在基板上，实现LED芯片与基板相导通；
5)将荧光胶点入所述基板的底部，直至点入的荧光胶的胶面与所述基板口部平齐；然后进行烘烤；
6)根据所需成型的LED形状预备相应的模具，将盖封胶灌入模具内。
CN201710544790.3A 2017-07-06 2017-07-06 能够延长led使用寿命的封装结构 Pending CN107331751A (zh)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101106847A (zh) * 2006-07-10 2008-01-16 Nec照明株式会社 发光装置
CN101118941A (zh) * 2006-08-03 2008-02-06 夏普株式会社 注入装置、半导体发光装置、制造装置和半导体发光装置的制造方法
CN101984511A (zh) * 2010-11-10 2011-03-09 秦彪 Led芯片和led晶片及芯片制造方法
CN102447035A (zh) * 2010-10-06 2012-05-09 展晶科技(深圳)有限公司 发光二极管、制造该发光二极管的模具及方法
CN102779919A (zh) * 2011-05-12 2012-11-14 展晶科技(深圳)有限公司 半导体封装结构
CN105023992A (zh) * 2014-04-30 2015-11-04 新世纪光电股份有限公司 封装方法及封装结构
CN107195757A (zh) * 2017-07-06 2017-09-22 庞绮琪 一种led封装结构

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101106847A (zh) * 2006-07-10 2008-01-16 Nec照明株式会社 发光装置
CN101118941A (zh) * 2006-08-03 2008-02-06 夏普株式会社 注入装置、半导体发光装置、制造装置和半导体发光装置的制造方法
CN102447035A (zh) * 2010-10-06 2012-05-09 展晶科技(深圳)有限公司 发光二极管、制造该发光二极管的模具及方法
CN101984511A (zh) * 2010-11-10 2011-03-09 秦彪 Led芯片和led晶片及芯片制造方法
CN102779919A (zh) * 2011-05-12 2012-11-14 展晶科技(深圳)有限公司 半导体封装结构
CN105023992A (zh) * 2014-04-30 2015-11-04 新世纪光电股份有限公司 封装方法及封装结构
CN107195757A (zh) * 2017-07-06 2017-09-22 庞绮琪 一种led封装结构

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