且特別是有關於一種And especially about one kind
i 200818541 i^-^w/003 21588twf.doc/0〇6 九、發明說明： 【發明所屬之技術領域】 ^本發明是有關於一種光源模組 採用發光晶片封裝體的光源模組。 【先前技術】 ir ί、年湘錢化鎵的化合物半導體，如氮化鎵 a 、鼠化銘鎵（AlGaN)、氮化錮鎵（InGaN)等的 ,(light emitting diode, LED) g 〇 , ^氮化物為-寬頻帶能隙之材料’其發級長可以從紫外 =一直涵盖至紅光’因此可說是好涵蓋整個可見光的波 奴。此外’相較於傳統燈泡，發光二極體具有絕對的優勢， 例如體積小、哥命長、低電壓/電流驅動、不易破裂、不含 水銀（沒有污染問題）以及發光效率佳（省電）等特性， 因此發光二極體在產業上的應用非常廣泛。 、、 “由於發光二極體的發光現象不屬於熱發光或放電發 光，而是屬於冷性發光，所以發光二極體裝置在散熱良好 的況下，舞命可長達十萬小時以上，且無須暖燈時間 (idling time)。此外，發光二極體裝置具有反應速度快（約 為1〇-9秒）、體積小、用電省、污染低（不含水銀）、高 可靠度、適合量產等優點，因此其應用的領域十分廣泛。 因此，發光二極體被視為21世紀最重要的光源，但為了達 到照明的目的。 然而，由於發光二極體運作時會產生大量的熱能，且 5 200818541 ιυ-^υ/〇03 21588twf.doc/006 I光-極體的⑨度及*命都會$到溫度的影響，因此當發 光二極體的功率增加時’散熱的需求也就逐漸增加。習知 技術是使賴_散齡統，“複_散齡統也會造 成燈具的體積過大以及成本增加等問題。 【發明内容】 _有L於此，本發明之目的是提供一種光源模組，以提 高使用壽命。 為達士述或是其他目的，本發明提出一種光源模組， 其包括一第一散熱板（thermal enhanced plate)、一隔壁 (partition)與多個發光晶片封裝體（Hght_ package)，其中第—散熱板具有_上表面與—下表面。隔 壁配置於第-散熱板之上表面上，以形成多個凹槽，且隔 壁具有多個第-接點。這些發光晶片縣體可插拔地配置 於凹槽内，而各發光晶片封裝體具有多個第二接點。這些 發光晶片封裝體配置於凹槽内時，各第二接點與這些第一 接點其中之一接觸而電性連接。 在本發明之一實施例中，第一散熱板與隔壁為整合成 一體。 在本發明之一實施例中，這些發光晶片封裝體之電性 連接的方式可以是串聯、並聯或串並聯。 在本發明之一實施例中，光源模組更包括一散熱管 (thermal enhancedtube),其配置於第一散熱板之下表面 上0 200818541 丄 /υι)3 21588twf.doc/006 在本發明之-實施例中，光源模組更包括一散哉餘片 (thermal enhanced fin)，其配置於第一散熱板之下^面 c 在本發明之-實施例中，各發光晶片封裝體包括 二散熱片、一導線架、一絕緣黏著層、至少一發 多條導線與一封膠。其中，導線架配置於第二散熱 而導線架暴露出第二散熱片之部分區域 於導線架與第二散熱片之間，且發光 ^^層配置 暴露出之第二散熱片上。這些導 導線架之間。封膠包覆發光晶片、導線、部^ 與部分導線架。 刀弟一政熱片 …在本發明之-實施例中，各發光晶片封褒 弟三散熱片，其配置於第二散熱片與發光晶片之間。 在本發明之一實施例中，發光晶 或有機發光二極體。 以先一極體 拔的且t於本Π的發光晶片封裝體可以採用插 $的方式元成組裝，因此當部分的發光晶 二7以直接拔出損壞的發光晶片封|體便可以了 ; 插入新的發光晶片封裝體，以完成重工（reWGrk)。換古 之’本發_絲额在組裝與重1 ° 採:”散熱裝置(例如散熱片 二用=率’因此本發明的光源模組具槪 為讓本發明之上述和其他目的、特徵和優點能更明顯 7 200818541 lD-y^u /U〇3 21588twf.doc/006 易懂’下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 圖1是依照本發明之一實施例之一種光源模組的俯視 圖，而2是依照本發明之一實施例之一種光源模組的剖面 圖。請參考圖1與圖2，本實施例之光源模組1〇〇包括一i 200818541 i^-^w/003 21588twf.doc/0〇6 IX. Description of the Invention: [Technical Field] The present invention relates to a light source module using a light source chip package. [Prior Art] ir ί, compound semiconductors of galaxies, such as gallium nitride a, AlGaN, InGaN, etc. (light emitting diode, LED) g 〇, ^Nitride is a material with a wide-band energy gap. Its length can range from UV = always to red light. Therefore, it can be said that it is a good slave that covers the entire visible light. In addition, compared to traditional light bulbs, light-emitting diodes have absolute advantages, such as small size, long life, low voltage/current drive, not easy to crack, no mercury (no pollution problems), and good luminous efficiency (power saving). With other characteristics, the LEDs are widely used in the industry. "Because the luminescence phenomenon of the illuminating diode is not a thermal luminescence or a discharge luminescence, but a cold luminescence, the illuminating diode device can have a life of more than 100,000 hours under the condition of good heat dissipation, and There is no need for idling time. In addition, the light-emitting diode device has a fast response speed (about 1〇-9 seconds), small volume, low power consumption, low pollution (no mercury), high reliability, suitable Mass production and other advantages, so its application is very extensive. Therefore, the light-emitting diode is regarded as the most important light source in the 21st century, but in order to achieve the purpose of lighting. However, due to the operation of the light-emitting diode will generate a lot of heat And 5 200818541 ιυ-^υ/〇03 21588twf.doc/006 I 9-degree and * life of the polar body will have a temperature effect, so when the power of the light-emitting diode increases, the demand for heat dissipation Gradually increase. The conventional technology is to make the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a light source module for improving the service life. The present invention provides a light source module including a first heat dissipating plate, a partition, and a plurality of light emitting chip packages (Hght_package), wherein the first The heat sink has an upper surface and a lower surface. The partition wall is disposed on the upper surface of the first heat sink to form a plurality of grooves, and the partition has a plurality of first contacts. The illuminating chip bodies are pluggably disposed in the recesses, and each of the illuminating chip packages has a plurality of second contacts. When the light emitting chip packages are disposed in the recesses, the second contacts are electrically connected to one of the first contacts. In an embodiment of the invention, the first heat sink and the partition wall are integrated. In an embodiment of the invention, the electrical connections of the light emitting chip packages may be in series, in parallel or in series and in parallel. In an embodiment of the invention, the light source module further includes a heat enhanced tube disposed on the lower surface of the first heat sink 0 200818541 丄 / υ ι ) 3 21588 twf. doc / 006 in the present invention - In an embodiment, the light source module further includes a heat reinforced fin disposed under the first heat sink. In the embodiment of the present invention, each of the light emitting chip packages includes two heat sinks. , a lead frame, an insulating adhesive layer, at least one wire and a glue. The lead frame is disposed on the second heat dissipating portion, and the lead frame exposes a portion of the second heat sink between the lead frame and the second heat sink, and the light emitting layer is disposed on the exposed second heat sink. Between these guides. The sealant covers the light-emitting chip, the wire, the portion, and a portion of the lead frame. In the embodiment of the present invention, each of the light-emitting wafers is sealed with a heat sink, which is disposed between the second heat sink and the light-emitting wafer. In one embodiment of the invention, the luminescent crystal or organic light emitting diode. The light-emitting chip package of the first-pole body and the body of the present invention can be assembled by means of inserting, so that part of the light-emitting crystals 7 can be directly pulled out of the damaged light-emitting chip package body; A new light-emitting chip package is inserted to complete the rework (reWGrk). In the past, the 'this hair _ wire amount is assembled and weighed 1 °." The heat sink (for example, the heat sink is used = rate). Therefore, the light source module of the present invention has the above and other objects, features and features of the present invention. Advantages can be more obvious 7 200818541 lD-y^u /U〇3 21588twf.doc/006 Easy to understand 'The following is a detailed description of the preferred embodiment, and is described in detail below with reference to the accompanying drawings. A top view of a light source module according to an embodiment of the present invention, and 2 is a cross-sectional view of a light source module according to an embodiment of the present invention. Referring to FIG. 1 and FIG. 2, the light source module 1 of the present embodiment 〇〇 includes one
第一散熱板110、一隔壁120與多個發光晶片封裝體13〇， 其中第一散熱板110具有一上表面ll〇a與一下表面 110b。隔壁120配置於第一散熱板110之上表面11〇a上， 以形成多個凹槽ll〇c，且隔壁12〇具有多個第一接點 120a。在本實施例中，第一散熱板11〇與隔壁12〇為獨立 構件，而第一散熱板11〇與隔壁12〇組裝在一起，以形成 凹槽110c。，然而’在其他實施例中’第一散熱板11〇與隔 土 120也可以疋整合成一體，也就是第一散熱板與隔 壁120乃是由單-構件所形成。此外，這些發光晶片封裝 體130可插拔地配置於凹槽u〇c内，而各 ⑽具有多㈣二接點丨施。這些發光晶 = =槽=内時’各第二接謂績這些第一接識 其中之一接觸而電性連接。 更砰、，，田向5，各發光晶片封裝體13〇 跡一第二散熱片跡-絕緣黏著層 光晶片浦、—黏著層⑽、多條 = 跡其中，導線架⑽配置於第二散熱片⑽上 200818541 , vy〇3 21588twf.doc/006 散熱片1320之部分區域。絕緣黏著層1330配 置H線Θ 131Q與第二散熱片132()之間，以固定導線 1310與第二散熱片132G之間的相對位置。 ' 發光晶片1340酉己置於導線架131〇所暴露出之第二散 熱片1320上，且黏著層135〇配置於第二散熱片i細鄉 先晶片1340之間，以固定發光晶片1340與第二散敎^ 1 一320之間的相對位置。此外，發光晶片134〇可以是發光 一極體或有機發光二極體，而黏著層135〇可是散熱膠。導 線1^360電性連接於發光晶片134〇與導線架！則之間，而 封膠1370包覆絕緣黏著層133〇、發光晶片134〇、黏著層 V線1360、部分弟一散熱片132〇與部分導線架131〇。 在本實施例中，由於第二散熱片132〇之頂端132〇a 與導線架1310之頂端1310a之間具有一高度差，因此本實 施例之發光晶片封裝體13〇更可以包括一第三散熱片 138〇,其配置於第二散熱片132〇與發光晶片134〇之間。 然而，第三散熱片1380與第二散熱片132〇也可以是整合 成體。此外，為了提高散熱效率，本實施例之光源模組 100更包括一散熱管140,其配置於第一散熱板11〇之下表 面110b上。然而，本實施例之散熱管14〇也可以 敎 片或其他散熱裝置所取代。 ”一 由於發光晶片1340在運作中所產生的熱能可以依序 了由黏著層1350、第三散熱片1380、第二散熱片132〇與 第散熱板11〇而傳導至外界，因此溫度就不易急遽上 升，而影響到發光晶片1340的發光效率與使用壽命。其 200818541 iu-^du/u03 21588twf.doc/006 n i, 次，由於這些發光晶片封裝體130以可插拔方式完成電性 連接’因此當某些發光晶片封裝體130有瑕疵而需進行重 工日寸，只需拔出這些有瑕疫的發光晶片封裝體丨3〇，並重 新，入新的發光晶片封裝體130便可完成重工。換言之， 本實施例的光源模組100在組裝與重工上均相當便利。再 者’本實施例之發光晶片封裝體13〇乃是採用串聯方式達 成電性連接，然而這些發光晶片封裝體13〇也可以是採用 並％、串並聯或其他方式達成電性連接。此外，本實施例 之，光晶片封裝體130乃是排列成陣列方式，然而這些發 ，晶片封裝體130也可以排列條狀方式，以形成光條（^ 壯ar。由於本實補的光賴組⑽採用多個發光晶片封 130 ’因此本實施例的光源模組則的亮度可以依據 片縣體的亮度與配置數量而有所不同。有關 後本貫施例的發光晶片封裝體⑽的製造方法將詳述如 1面圖iA至圖3E是圖1之發光晶片封裝體的製造方法的 _ 本加狀發光晶片封裝體 與—第=H包括下列步驟。首先’提供-導線架⑽ 絕緣黏著声133〇，而i笛_在¥線木1310上已形成有一 散熱片1380。鈇而，在1320上已配置—第三 l , _ …、在’、他實靶例中，在第二散埶片1320 上也：以不配置一第三散熱片138〇。 I、片1320 固著黏著層1330將導線架1310 —政…片上。此外，由於絕緣黏著層1330 200818541 lu-^du/u03 21588twf.doc/〇〇6 為絕緣材質，因此導線架1310與第二散熱片i32〇之間並 不會產生電性短路。 明參考圖3C，藉由黏著層1350將發光晶片134〇固 著於第三散熱片1380上。然而，在第二散熱片132〇上未 配置第三散熱片1380時，發光晶片134〇也可以藉由黏著 層1350直接固定於經由第二散熱片132〇上。然後，進行 一打線製程（wire bonding process)，以形成多條連接發 光晶片1340與導線架1310之間的導線136〇。 口月參考圖3D ’進行一封膠製程（m〇iding process)， 以形成包覆絕緣黏著層1330、發光晶片1340、黏著層 1350、導線1360、部分第二散熱片132〇與部分導線架131〇 的封膠1370。此外，封膠1370為透明材質，因此發光晶 片1340所發出的光線能夠穿透封膠137〇。 請參考圖3E，在形成封膠1370之後，彎折導線架 1310，以形成第二接點13〇a。至此，大致完成發光晶片封 裝體130的製程。 ， 值得注意的是，本發明之發光晶片封裝體並不限定於 圖2所揭露的發光晶片封裝體13〇的型態。更詳細而言， 雖然本實施例的發光晶片1340經由導線1360電性連接至 導線架1310，然而發光晶片1340也可以經由凸塊（未繪 示）以覆晶接合（flip chip bonding)方式電性連接封裝基 板（未緣示）或是其他類型的承載器（carrier)。因此， 四方扁平封裝結構（Quad Flat Package，QFP)或其他具有 外露接點的發光晶片封裝體均可應用於本發明中。此外， π B B曰 曰 曰曰 Γ u 200818541 ii>y)u/u03 21588twf.doc/006 發光晶片封裝體130也可以包含兩個以上的發光 片封褒體另—種適用於圖1之光源模組的發光 圖4是適用於圖R光源模組的另 =3;r考圖4,此發光晶片封裝趙 土 發光晶片2320、多條導線2330、一封膠 2340與一散熱片2350。並中，封m 乂 ，、T釘衣基板2310配置於散熱 片2350上。封裝基板231〇具有一開口 231加 別2,其中開π2施暴露出部分散熱片⑽。此外接= 先晶片2320配置於封裝基板231〇所暴露之散熱片23& 上而V線2330電性連接封裝基板231〇與發光晶片 ^間。封膠2340覆蓋發光晶片232〇、導線233〇、部分封 板2310與部分散熱片235〇。值得注意的是，封膠牝 暴露出封裴基板2310的接點2312。由於此發光晶片封裝 體230具有外露的接點2312，因此此發光晶片封裝體2如 也可以取代圖1中的發光晶片封裝體130。 雖:、、i本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是依照本發明之一實施例之一種光源模組的俯視 圖0 12 200818541 / u03 21588twrf.doc/006 圖2是依照本發明之一實施例之一種光源模組的剖面 圖。 圖3A至圖3E是圖1之發光晶片封裝體的製造方法的 剖面示意圖。 圖4是適用於圖1之光源模組的另一發光晶片封裝體 的剖面圖。 【主要元件符號說明】 100 :光源模組 110 :第一散熱板 110a :上表面 11 Ob :下表面 110c :凹槽 120 :隔壁 120a :第一接點 130 :發光晶片封裝體 / 130a :第二接點 1310 :導線架 1310a:頂端 1320 :第二散熱片 1320a :頂端 1330 :絕緣黏著層 1340 :發光晶片 1350 :黏著層 13 200818541 ιυ-y^u /υ〇3 21588twf.doc/006 1360 :導線 1370 ··封膠 1380 :第三散熱片 140 :散熱管 230 :發光晶片封裝體 2310 :封裝基板 2310a ··開口 2312 :接點 2320 :發光晶片 2330 :導線 2340 :封膠 2350 :散熱片 14The first heat dissipation plate 110, a partition wall 120 and a plurality of light emitting chip packages 13A, wherein the first heat dissipation plate 110 has an upper surface 11a and a lower surface 110b. The partition wall 120 is disposed on the upper surface 11〇a of the first heat dissipation plate 110 to form a plurality of grooves 11〇c, and the partition wall 12〇 has a plurality of first contacts 120a. In the present embodiment, the first heat radiating plate 11 is partitioned from the partition wall 12 as a separate member, and the first heat radiating plate 11 is assembled with the partition wall 12 to form the recess 110c. However, in other embodiments, the first heat sink 11 and the spacer 120 may be integrated into one body, that is, the first heat sink and the partition 120 are formed by a single member. Further, these light emitting chip packages 130 are interposably disposed in the recesses u 〇 c, and each (10) has a plurality of (four) two-contact applications. These luminescent crystals = = slot = inner apos; each of the second splicing is said to be one of the first contacts, one of which is in contact with and electrically connected. Further, Tian Xiang 5, each of the light-emitting chip packages 13 traces a second heat sink trace - an insulating adhesive layer optical wafer, an adhesive layer (10), a plurality of strips, wherein the lead frame (10) is disposed in the second heat sink Piece (10) on 200818541, vy〇3 21588twf.doc/006 Part of the heat sink 1320. The insulating adhesive layer 1330 is disposed between the H-wire Θ 131Q and the second heat sink 132 () to fix the relative position between the wire 1310 and the second heat sink 132G. The illuminating wafer 1340 is placed on the second heat sink 1320 exposed by the lead frame 131 ,, and the adhesive layer 135 〇 is disposed between the second heat sink i and the first wafer 1340 to fix the light emitting chip 1340 and the first The relative position between the two 敎 ^ 1 - 320. In addition, the light-emitting chip 134A may be a light-emitting diode or an organic light-emitting diode, and the adhesive layer 135A may be a heat-dissipating glue. The wire 1^360 is electrically connected to the light-emitting chip 134 and the lead frame! Between the two, the encapsulant 1370 is covered with an insulating adhesive layer 133, a light-emitting chip 134, an adhesive layer V-line 1360, a portion of a heat sink 132, and a portion of the lead frame 131A. In this embodiment, the light emitting chip package 13 of the present embodiment may further include a third heat dissipation due to a height difference between the top end 132A of the second heat sink 132 and the top end 1310a of the lead frame 1310. The sheet 138 is disposed between the second fin 132 〇 and the illuminating wafer 134 。. However, the third fins 1380 and the second fins 132 may also be integrated. In addition, in order to improve the heat dissipation efficiency, the light source module 100 of the embodiment further includes a heat dissipation tube 140 disposed on the surface 110b below the first heat dissipation plate 11〇. However, the heat pipe 14 of the present embodiment can also be replaced by a chip or other heat sink. "The thermal energy generated by the illuminating wafer 1340 during operation can be sequentially transmitted to the outside by the adhesive layer 1350, the third heat sink 1380, the second heat sink 132 〇 and the first heat sink 11 ,, so the temperature is not easy to be impatient. Rising, affecting the luminous efficiency and lifetime of the light-emitting wafer 1340. Its 200818541 iu-^du/u03 21588twf.doc/006 ni, times, since these light-emitting chip packages 130 are electrically connected in a pluggable manner, When some of the light-emitting chip packages 130 are defective and need to be reworked, it is only necessary to pull out the plaque-emitting light-emitting chip packages 并3〇, and re-enter the new light-emitting chip package 130 to complete the rework. In other words, the light source module 100 of the present embodiment is quite convenient in assembly and rework. Further, the light-emitting chip package 13 of the present embodiment is electrically connected in series, but these light-emitting chip packages 13〇 It is also possible to achieve electrical connection by using %, series-parallel or other means. In addition, in the embodiment, the optical chip packages 130 are arranged in an array manner, however, these hairs, The chip package 130 can also be arranged in a strip manner to form a light strip (^ ar ar. Since the light-receiving group (10) of the present embodiment uses a plurality of light-emitting chip packages 130', the brightness of the light source module of the embodiment can be based on The brightness of the film body is different from the number of configurations. The manufacturing method of the light-emitting chip package (10) according to the present embodiment will be described in detail. FIG. 1A to FIG. 3E are the manufacturing method of the light-emitting chip package of FIG. The _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , has been configured on the 1320 - the third l, _ ..., in the ', his actual target case, on the second dilated film 1320 also: do not configure a third heat sink 138 〇. I, piece 1320 fixed The adhesive layer 1330 is on the lead frame 1310. Further, since the insulating adhesive layer 1330 200818541 lu-^du/u03 21588twf.doc/〇〇6 is an insulating material, between the lead frame 1310 and the second heat sink i32〇 Does not produce an electrical short circuit. Referring to Figure 3C, by the adhesive layer 1350 The optical wafer 134 is fixed on the third heat sink 1380. However, when the third heat sink 1380 is not disposed on the second heat sink 132, the light emitting chip 134 can be directly fixed to the second via the adhesive layer 1350. The heat sink 132 is mounted on the heat sink 132. Then, a wire bonding process is performed to form a plurality of wires 136 between the light-emitting chip 1340 and the lead frame 1310. The moon is referred to FIG. 3D to perform a glue process (m). The iding process is performed to form a capping insulating adhesive layer 1330, an illuminating wafer 1340, an adhesive layer 1350, a wire 1360, a portion of the second heat sink 132, and a portion of the lead frame 131A. In addition, the sealant 1370 is a transparent material, so that the light emitted by the light-emitting wafer 1340 can penetrate the sealant 137〇. Referring to FIG. 3E, after forming the sealant 1370, the lead frame 1310 is bent to form a second contact 13〇a. Thus far, the process of the light-emitting chip package 130 is substantially completed. It should be noted that the light-emitting chip package of the present invention is not limited to the type of the light-emitting chip package 13A disclosed in FIG. In more detail, although the illuminating wafer 1340 of the present embodiment is electrically connected to the lead frame 1310 via the wire 1360, the illuminating wafer 1340 can also be electrically connected by a bump (not shown) in a flip chip bonding manner. Connect the package substrate (not shown) or other type of carrier. Therefore, a quad flat package (QFP) or other light-emitting chip package having exposed contacts can be applied to the present invention. In addition, π BB曰曰曰曰Γ u 200818541 ii>y)u/u03 21588twf.doc/006 The light-emitting chip package 130 may also include two or more light-emitting chip packages, and the other is suitable for the light source mode of FIG. The illuminating diagram 4 of the group is applied to the R light source module of the R light source module. The light emitting chip encapsulates the radiant light emitting chip 2320, the plurality of wires 2330, the adhesive 2340 and a heat sink 2350. In the meantime, the sealing substrate 301 and the T-pinning substrate 2310 are disposed on the heat sink 2350. The package substrate 231A has an opening 231, 2, wherein the opening π2 exposes a portion of the heat sink (10). In addition, the first wafer 2320 is disposed on the heat sink 23 & exposed on the package substrate 231 , and the V line 2330 is electrically connected between the package substrate 231 〇 and the light emitting wafer. The sealant 2340 covers the light-emitting chip 232, the wire 233, the partial seal 2310, and a portion of the heat sink 235. It is worth noting that the sealant 暴露 exposes the contact 2312 of the package substrate 2310. Since the light emitting chip package 230 has the exposed contacts 2312, the light emitting chip package 2 can also replace the light emitting chip package 130 of FIG. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of a light source module according to an embodiment of the invention. FIG. 2 is a cross section of a light source module according to an embodiment of the invention. Figure. 3A to 3E are schematic cross-sectional views showing a method of manufacturing the light-emitting chip package of Fig. 1. 4 is a cross-sectional view of another light emitting chip package suitable for use in the light source module of FIG. 1. [Main component symbol description] 100: Light source module 110: First heat dissipation plate 110a: Upper surface 11 Ob: Lower surface 110c: Groove 120: Partition wall 120a: First contact 130: Light-emitting chip package / 130a: Second Contact 1310: lead frame 1310a: top end 1320: second heat sink 1320a: top end 1330: insulating adhesive layer 1340: light emitting chip 1350: adhesive layer 13 200818541 ιυ-y^u / υ〇 3 21588twf.doc / 006 1360 : wire 1370 ·· Sealant 1380: Third heat sink 140: Heat pipe 230: Light-emitting chip package 2310: Package substrate 2310a · Opening 2312: Contact 2320: Light-emitting chip 2330: Wire 2340: Sealant 2350: Heat sink 14