JP6058939B2 - LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD - Google Patents

Description

  The present invention relates to a light emitting device and a manufacturing method thereof, and more particularly, to a light emitting device including a light emitting element and a manufacturing method thereof.

  In recent years, LEDs (Light Emitting Diodes) are often used as light sources for lighting devices. As a method of obtaining white light of a lighting device using an LED (light emitting element), a method using three types of LEDs, a red LED, a blue LED, and a green LED, and emitting yellow light by converting excitation light emitted from the blue LED There is a method using a phosphor. As a light source for illumination, white light with sufficient luminance is required, and lighting devices using a plurality of LED chips have been commercialized. Such an illuminating device usually includes a light emitting device on which an LED is mounted.

  In recent years, various types of illumination devices have been demanded, and in particular, there has been a demand for illumination devices of a type such as a light bulb that emits light in a wider range. For example, an omnidirectional light bulb corresponds to this. In order to realize such an illumination device, a light emitting device that emits light in a wider range is required.

  As such a light emitting device, a light emitting device in which a light emitting element is mounted on a transparent substrate is conventionally known. In this light emitting device, the light emitted from the light emitting element is transmitted through the transparent substrate and also emitted to the back side of the transparent substrate, so that the light is emitted in a wide range.

  However, since the transparent substrate has poor heat conduction, a conventionally known light emitting device has a problem of insufficient heat dissipation. In particular, in the case of a light-emitting device that requires high light output, the problem of heat dissipation increases because a plurality of light-emitting elements are mounted on a transparent substrate.

  With respect to such a problem, Patent Document 1 described later proposes a light emitting device in which metal plates are arranged on both sides of a transparent substrate. This light-emitting device includes a transparent substrate on which an LED chip is mounted, and metal plates are fixed to both sides of the LED chip on the transparent substrate via a conductor. The LED chip mounted on the transparent substrate is sealed with a translucent member containing a phosphor. In the light emitting device of Patent Document 1, since the metal plate is fixed to both sides of the transparent substrate via a conductor, heat generated in the LED chip is radiated through the metal plate.

JP 2007-165811 A

  The light emitting device of Patent Document 1 has no major problem with respect to heat dissipation as long as only one LED chip is mounted. However, when the inventors of the present application have studied, for example, when a plurality of LED chips are mounted on a transparent substrate, the metal plate is fixed, and heat dissipation proceeds only on both sides of the transparent substrate. It turned out that the inconvenience that heat accumulates in a part arises. Furthermore, it was also found that the temperature of the LED chip varies depending on the location where the LED chip is mounted, resulting in temperature unevenness.

  Patent Document 1 also discloses a configuration in which a phosphor is contained in a die bond member for mounting an LED chip. By including the phosphor in the die bond member, the light emitted from the LED chip to the transparent substrate side is wavelength-converted by the phosphor in the die bond member.

  When a phosphor is contained in the die bond member, the thickness of the die bond member may increase and the heat dissipation may be significantly reduced. In order to improve heat dissipation, it is preferable that the die bond member does not contain a phosphor. In this case, since the light emitted from the LED chip to the transparent substrate side is transmitted through the die bonding member and enters the transparent substrate, the light of the LED chip in the emission color propagates through the transparent substrate and is emitted to the outside. There is a risk of being. As a result, a large amount of light in the emission color of the LED chip is emitted, resulting in a new problem of causing color unevenness.

  The present invention has been made in order to solve the above-described problems. One object of the present invention is to emit light over a wide range and to provide heat radiation with high in-plane uniformity. A light-emitting device that can be realized and a method for manufacturing the light-emitting device.

  Another object of the present invention is to provide a light emitting device capable of efficiently emitting light of uniform light emission color over a wide range and a method for manufacturing the light emitting device.

  In order to achieve the above object, a light-emitting device according to a first aspect of the present invention includes a plurality of light-emitting elements, a transparent substrate on which the plurality of light-emitting elements are mounted, a reflector on which the transparent substrate is fixed, A transparent resin layer containing a phosphor and formed so as to cover the transparent substrate. The reflection plate has a light transmission part through which light emitted from the plurality of light emitting elements is transmitted. The light transmission portion is provided in a region facing the plurality of light emitting elements.

  The plurality of light emitting elements are mounted on a transparent substrate, and the transparent substrate is fixed on the reflector. Heat generated in the light emitting element is dissipated through the reflector. By fixing the transparent substrate on the reflecting plate, the heat generated by driving the plurality of light emitting elements can be spread uniformly in the plane and efficiently radiated. That is, heat radiation with high in-plane uniformity can be realized. Therefore, for example, it is possible to suppress the heat from being accumulated in the central portion of the transparent substrate, or the occurrence of temperature unevenness in which the temperatures are different among the plurality of light emitting elements. The reflection plate to which the transparent substrate is fixed is provided with a light transmission portion in a region facing the plurality of light emitting elements. The light emitted from the light emitting element passes through the transparent substrate, for example, and is also emitted from the light transmission part. Thereby, this light-emitting device can emit light in a wide range.

  In the light emitting device, the transparent substrate is covered with a transparent resin layer containing a phosphor. Therefore, it can suppress that the light with the luminescent color of a light emitting element propagates in a transparent base | substrate, and is radiate | emitted outside. Therefore, since it can suppress that many lights with the luminescent color of a light emitting element are radiate | emitted, generation | occurrence | production of color unevenness can be suppressed. Further, by including a reflecting plate for fixing the transparent substrate, the light emitted from the light emitting element and the phosphor can be efficiently reflected by the reflecting plate. Thereby, light can be effectively taken out of the light emitting device.

  As described above, according to the light emitting device, heat radiation with high in-plane uniformity can be realized, and light of uniform light emission color can be emitted in a wide range and efficiently.

  Preferably, the formation region of the light transmission part is smaller than the plane area of the transparent substrate. Thereby, the transparent base | substrate with which the light emitting element is mounted can be easily fixed to a reflecting plate so that the light emitting element may oppose a light transmissive part.

  More preferably, the light emitting device further includes an adhesive layer that does not contain a phosphor and fixes the light emitting element on the transparent substrate, and the adhesive layer has translucency.

  By fixing the light emitting element through an adhesive layer that does not contain a phosphor, it is possible to suppress the thickness of the adhesive layer from becoming too large, so that heat dissipation can be further improved. In this light emitting device, since the transparent substrate is covered with the transparent resin layer containing the phosphor, even in such a configuration, the light that remains in the emission color of the light emitting element propagates through the transparent substrate and is exposed to the outside. The emission can be suppressed.

  More preferably, the transparent substrate has an end, the transparent resin layer has an end corresponding to the end of the transparent substrate, and the distance from the end of the transparent substrate to the end of the transparent resin layer is d, When the distance from the mounting surface on which the light emitting element is mounted on the transparent substrate to the outer surface facing the mounting surface in the transparent resin layer is t, the distance d and the distance t have a relationship of d ≧ t.

  By making the distance d from the edge of the transparent substrate to the edge of the transparent resin layer equal to or greater than the distance t from the mounting surface of the transparent substrate to the outer surface of the transparent resin layer, the side surface of the transparent substrate can be easily and appropriately It can be covered with a transparent resin layer containing an amount of phosphor. Light that propagates through the transparent substrate and is emitted from the side surface of the transparent substrate can sufficiently excite the phosphor in the transparent resin layer that covers the side surface of the transparent substrate, so that much of the light remains in the emission color of the light-emitting element. Emission can be easily suppressed. As a result, the light emitted to the outside can be easily converted into light of uniform emission color.

  More preferably, the transparent substrate has an end, and each of the transparent resin layer and the reflector has an end corresponding to the end of the transparent substrate, and the distance from the end of the transparent substrate to the end of the transparent resin layer. Is d and the distance from the end of the transparent substrate to the end of the reflector is A, the distance d and the distance A have a relationship of A ≧ d.

  By setting the distance A from the edge of the transparent substrate to the edge of the reflector to be equal to or greater than the distance d from the edge of the transparent substrate to the edge of the transparent resin layer, the transparent resin layer containing the phosphor can be easily formed. The transparent substrate can be covered. In addition, the side surface of the transparent substrate can be easily covered with a transparent resin layer containing an appropriate amount of phosphor.

  More preferably, the light transmission part has an end part, and when the distance from the end part of the light transmission part to the light emitting element closest to the end part among the plurality of light emitting elements is C, the distance C is C> 0.

  If comprised in this way, since the light radiate | emitted from the light emitting element can be efficiently taken out from the light transmissive part, the light from a light emitting element can be efficiently radiate | emitted outside over a wide range.

  More preferably, the reflecting plate is made of a metal material.

  By configuring the reflecting plate from a metal material, the heat generated in the light emitting element can be spread more uniformly in the plane and efficiently radiated. Thereby, the heat dissipation of a light-emitting device can be improved further.

  More preferably, the transparent substrate has a thickness of 200 μm or more and 6000 μm or less.

  By setting the thickness of the transparent substrate to such a thickness, the heat dissipation characteristics of the light emitting device can be further improved. In addition, a decrease in mechanical strength of the transparent substrate can be suppressed, and the transparent substrate can be hardly damaged.

  A method for manufacturing a light emitting device according to a second aspect of the present invention includes a step of mounting a plurality of light emitting elements on a transparent substrate, a step of forming a reflector having a light transmission portion, and a transparent substrate on the reflector. Including a step of fixing the plurality of light emitting elements so as to face the light transmitting portion, and a step of forming a transparent resin layer containing a phosphor so as to cover the transparent substrate.

  A plurality of light emitting elements are mounted on a transparent substrate, and the transparent substrate is fixed on a reflector. Heat generated in the light emitting element is dissipated through the reflector. By fixing the transparent substrate on the reflecting plate, the heat generated by driving the plurality of light emitting elements can be spread uniformly in the plane and efficiently radiated. That is, heat radiation with high in-plane uniformity can be realized. When the transparent substrate is fixed to the reflecting plate, the transparent substrate is fixed to the reflecting plate so that the plurality of light emitting elements are opposed to the light transmission part formed on the reflecting plate. Therefore, the light emitted from the light emitting element passes through the transparent base, for example, and is also emitted from the light transmitting portion of the reflecting plate. Thereby, the light-emitting device manufactured by this manufacturing method can emit light in a wide range.

  Further, a transparent resin layer containing a phosphor is formed so as to cover the transparent substrate on which the light emitting element is mounted. Since the transparent substrate is covered with the transparent resin layer containing the phosphor, it is possible to suppress the light that remains in the emission color of the light emitting element from propagating through the transparent substrate and being emitted to the outside. Therefore, since it can suppress that many lights with the luminescent color of a light emitting element are radiate | emitted, generation | occurrence | production of color unevenness can be suppressed. Furthermore, by fixing the transparent substrate to the reflecting plate, the light emitted from the light emitting element and the phosphor can be efficiently reflected by the reflecting plate, so that the light can be taken out effectively.

  As described above, according to this manufacturing method, it is possible to manufacture a light emitting device that can realize heat radiation with high in-plane uniformity and can efficiently emit light of uniform light emission color over a wide range.

  As described above, according to the present invention, it is possible to easily obtain a light emitting device capable of emitting light over a wide range and realizing heat radiation with high in-plane uniformity and a method for manufacturing the light emitting device.

  Further, according to the present invention, it is possible to easily obtain a light emitting device capable of efficiently emitting light of uniform emission color over a wide range and a method for manufacturing the light emitting device.

It is a figure which shows the whole structure of the illuminating device which concerns on the 1st Embodiment of this invention. FIG. 2 is a cross-sectional view of the light emitting device shown in FIG. 1 (a view corresponding to a cross section taken along line 2-2 in FIG. 3). It is a top view (figure of the state seen from the upper surface side) of the light-emitting device shown in FIG. It is a top view of the transparent base | substrate of the light-emitting device shown in FIG. FIG. 5 is a cross-sectional view taken along line 5-5 of FIG. FIG. 2 is a cross-sectional view (a diagram showing a state in which a metal column is fixed) of the transparent substrate of the light emitting device shown in FIG. 1. It is a top view of the reflecting plate of the light-emitting device shown in FIG. It is a top view (figure of the state seen from the lower surface side) of the light-emitting device shown in FIG. FIG. 9 is a cross-sectional view of a light-emitting element mounted on the light-emitting device shown in FIG. 1 (a diagram corresponding to a cross section taken along line 9-9 in FIG. 10). It is a top view of the light emitting element mounted in the light-emitting device shown in FIG. It is sectional drawing which expands and shows a part of light-emitting device shown in FIG. It is a figure for demonstrating the manufacturing method of the light-emitting device shown in FIG. 1 (the figure which looked at the light-emitting device from the side side). It is a top view for demonstrating the manufacturing method of the light-emitting device shown in FIG. It is a figure which shows the whole structure of the illuminating device which concerns on the 2nd Embodiment of this invention. It is sectional drawing of the light-emitting device shown in FIG. It is sectional drawing of the light-emitting device which concerns on the 3rd Embodiment of this invention. It is a top view which shows the reflecting plate of the light-emitting device which concerns on the 1st modification of this invention. It is a top view which abbreviate | omits and shows the light-emitting device which concerns on the 1st modification of this invention. It is a top view which shows the reflecting plate of the light-emitting device which concerns on the 2nd modification of this invention. It is a top view which abbreviate | omits and shows the light-emitting device which concerns on the 2nd modification of this invention. It is sectional drawing of the light-emitting device which concerns on the 3rd modification of this invention.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments embodying the present invention will be described in detail with reference to the drawings. In the following description and drawings, the same reference numerals and names are assigned to the same parts or components. Their functions are also the same. Therefore, detailed description thereof will not be repeated.

(First embodiment)
[overall structure]
With reference to FIG. 1, the illuminating device 50 which concerns on this Embodiment is a lightbulb-type LED lamp. The illuminating device 50 includes a light-transmitting bulb 60, a light-emitting device 200 disposed inside the bulb 60 instead of the incandescent bulb filament, a metal column 300 that supports (holds) the light-emitting device 200, and an auxiliary metal. A column 310 and a base part 70 for power supply are included.

  The bulb 60 is a light bulb-like member made of a light-transmitting material such as plastic or glass. The base part 70 is a part connected to a socket (not shown) of a lighting fixture, for example. When the base unit 70 is connected to the socket, electric power is supplied to the light emitting device 200 via the base unit 70.

  The illumination device 50 further includes a reflective base 80 that reflects light from the light emitting device 200. The reflection base 80 is made of a material having a high reflectance such as an Al alloy. The reflecting substrate 80 is attached to the upper side (the bulb 60 side) of the base part 70 so that the reflecting surface 82 faces the light emitting device 200 side. The reflection base 80 is also disposed so as to cover an opening (not shown) of the bulb 60, and reflects light emitted from the light emitting device 200 in the lower direction (downward direction: the base portion 70). . The reflective substrate 80 also has a function as a heat sink for radiating heat from the light emitting device 200.

  The lighting device 50 includes one metal column 300 and two auxiliary metal columns 310. The metal column 300 and the auxiliary metal column 310 are made of, for example, an Al alloy having a high reflectance. In addition to the function of supporting (holding) the light-emitting device 200, the metal column 300 and the auxiliary metal column 310 function as a heat sink for radiating heat generated in the light-emitting element 100 (see FIG. 2) described later, and The light emitting element 100 has a function as a lead terminal (introduction wire) for electrically connecting the light emitting element 100 to the base part 70.

  The light emitting device 200 is fixed in such a manner that the metal pillar 300 and the auxiliary metal pillar 310 are floated inside the lighting device 50 by being attached to a portion (mounting portion) on the reflection base 80 side.

<< Configuration of Light Emitting Device 200 >>
With reference to FIG. 2, the light-emitting device 200 according to the present embodiment includes a plurality of light-emitting elements 100, a transparent base 210 on which the plurality of light-emitting elements 100 are mounted, and a reflector 230 on which the transparent base 210 is fixed. And a sealing resin layer 250 which is a transparent resin layer for sealing the plurality of light emitting elements 100. The sealing resin layer 250 contains a phosphor that converts the wavelength of light from the light emitting element 100.

  The transparent substrate 210 is a support substrate that can transmit 70% or more of light from the light emitting element 100 to be mounted. The transparent substrate 210 is made of a material having high thermal conductivity capable of conducting heat generated from the light emitting element 100 to the metal pillar 300 and the auxiliary metal pillar 310. Specifically, the transparent substrate 210 is made of insulating sapphire.

  The transparent substrate 210 also has one main surface (hereinafter referred to as “front surface”) 212, the other main surface (hereinafter referred to as “back surface”) 214 that is the surface opposite to the front surface 212, and a side surface 216. Have The surface 212 is also a mounting surface on which the light emitting element 100 is mounted. The back surface 214 of the transparent substrate 210 is a non-smooth surface. The thickness x of the transparent substrate 210 is preferably 200 μm or more in consideration of heat dissipation characteristics and the like. Furthermore, by setting the thickness x of the transparent substrate 210 to 200 μm or more, it is possible to suppress a decrease in mechanical strength of the transparent substrate 210 and to prevent the transparent substrate 210 from being damaged. On the other hand, when the thickness x of the transparent substrate 210 becomes too large, the cost increases and the weight of the light emitting device 200 increases. Considering these points, the thickness x of the transparent substrate 210 is preferably 6000 μm or less.

  3 and 4, the transparent substrate 210 is formed in a substantially rectangular shape extending in one direction as seen in a plan view. Therefore, the transparent substrate 210 has four sides 210a to 210d. Each side 210 a to 210 d coincides with the side surface 216 of the transparent substrate 210. The side surface 216 includes side surfaces 216a to 216d corresponding to the four sides 210a to 210d, respectively. The transparent substrate 210 further has end portions 210e to 210h that coincide with the four sides 210a to 210d, respectively.

  Referring to FIG. 4, a through hole 218 is formed in the central portion of the transparent substrate 210. An electrode pad 220 is formed on the surface 212 of the transparent substrate 210 and in a region around the through hole 218. Referring to FIG. 5, electrode pads 222 similar to the electrode pads 220 formed on the front surface 212 are also formed on the back surface 214 of the transparent substrate 210. Furthermore, a connection portion 224 that connects the electrode pad 220 and the electrode pad 222 is formed on the inner side surface of the through hole 218. The electrode pad 220, the electrode pad 222, and the connection portion 224 are integrally formed of the same material. Therefore, the electrode pad 220, the electrode pad 222, and the connection part 224 are in a state of being electrically connected to each other. The electrode pad 220, the electrode pad 222, and the connection portion 224 are made of a metal material having excellent electrical conductivity.

  Referring to FIG. 6, a metal column 300 (see FIG. 2) is inserted into the through hole 218 of the transparent substrate 210. By inserting the metal pillar 300 into the through hole 218, for example, the connecting portion 224 and the metal pillar 300 are in contact with each other. Thereby, the metal pillar 300 and the electrode pad 220 are electrically connected. The metal column 300 is fixed to the transparent substrate 210 by being inserted into the through hole 218 of the transparent substrate 210. In this case, it is preferable that the metal pillar 300 is fixed with an adhesive or the like so as not to come off.

  2 and 3, the light emitting element 100 functions as a light source of the light emitting device 200. Each of the plurality of light emitting elements 100 includes a light emitting diode element (LED) formed using a nitride semiconductor. All of the plurality of light emitting elements 100 are mounted on the surface 212 of the transparent substrate 210. The specific number of mounted light emitting elements 100 is, for example, thirty. Details of the light emitting element 100 will be described later.

  The plurality of light emitting elements 100 are mounted on the transparent substrate 210 via an adhesive layer 240 (see FIG. 2) made of a die bond paste. A silicone resin having translucency is used for the die bond paste. The adhesive layer 240 does not contain a phosphor.

  When the phosphor is contained in the adhesive layer, the average particle size of the phosphor is usually as large as about 5 μm to 15 μm. When such a phosphor having a large particle size is dispersed in the adhesive layer, the thickness of the adhesive layer is increased and the heat dissipation is significantly reduced. In the present embodiment, in order to improve heat dissipation, the adhesive layer 240 is configured not to contain a phosphor.

  The plurality of light emitting elements 100 are also connected in series and parallel, for example, by wires 242 made of gold wires or the like. It is preferable that the light emitting elements 100 connected in series have the same number of connections.

  One electrode of the plurality of light emitting elements 100 mounted on the transparent substrate 210 is electrically connected to the electrode pad 220 via a wire 242 or the like. The other electrode of the plurality of light emitting elements 100 is electrically connected to the reflecting plate 230 via a wire 242 or the like. In the present embodiment, for example, the electrode pad 220 of the transparent substrate 210 functions as a positive electrode, and the reflector 230 functions as a negative electrode. Note that by reversing the connection of the light emitting element 100, the electrode pad 220 may function as a negative electrode, and the reflector 230 may function as a positive electrode.

  The reflector 230 is made of a metal material having high thermal conductivity. Specifically, the reflector 230 is made of an Al alloy. Since the Al alloy has a high reflectance, it can be suitably used as a material constituting the reflecting plate 230.

  Referring to FIG. 7, the reflector 230 is formed in a substantially rectangular shape extending in one direction as viewed in plan view. Therefore, the reflecting plate 230 has four sides 230a to 230d. The reflector 230 also has end portions 230e to 230h that coincide with the four sides 230a to 230d, respectively. The external dimensions of the reflector 230 are larger than the external dimensions of the transparent substrate 210. The thickness of the reflector 230 is preferably 100 μm or more from the viewpoint of enhancing durability. In addition, when the thickness of the reflecting plate 230 becomes too large, the light emitting device 200 becomes heavy and the shade of the reflecting plate becomes strong. If the shade of the reflecting plate becomes strong, the radiation characteristics may be deteriorated, so that it is difficult to obtain uniform radiation characteristics. In order to obtain uniform radiation characteristics, the thickness of the reflector 230 is preferably less than 10 mm. Furthermore, the thickness of the reflector 230 is preferably smaller than the thickness x of the transparent substrate 210 in order to obtain uniform radiation characteristics while suppressing the shade of the reflector from becoming strong.

  An opening 232 that penetrates the reflecting plate 230 in the thickness direction is formed in the central portion of the reflecting plate 230. The opening 232 functions as a light transmission part (light transmission part) for transmitting (passing) light from the light emitting element 100 and emitting it to the lower surface side of the reflection plate 230. The opening 232 is formed in a substantially rectangular shape when viewed in plan view. For example, the planar shape of the opening 232 is similar to that of the transparent substrate 210. Therefore, the opening 232 has four end portions 232 a to 232 d corresponding to the end portions 230 e to 230 h of the reflection plate 230, respectively.

  The opening 232 is further formed in a portion of the reflector 230 where the transparent substrate 210 is fixed, with a plane area smaller than the plane area of the transparent substrate 210. Through holes 234 to which the auxiliary metal pillar 310 is fixed are formed at both end portions in the extending direction of the reflection plate 230. The auxiliary metal column 310 is fixed by screws using these through holes 234. The auxiliary metal pillar 310 and the reflector 230 are electrically connected by fixing the auxiliary metal pillar 310 to the through hole 234 with screws. The metal pillar 300 and the auxiliary metal pillar 310 allow an external current to be applied to the light emitting element 100, and the element can emit light.

  Referring to FIGS. 2 and 3 again, the transparent substrate 210 is fixed on the upper surface of the reflector 230 so as to cover the opening 232. Specifically, the transparent substrate 210 is made to be a reflector so that the sides 210a to 210d (ends 210e to 210h) of the transparent substrate 210 correspond to the sides 230a to 230d (ends 230e to 230h) of the reflector 230, respectively. 230 is disposed on the upper surface. Since the formation area of the opening 232 is smaller than the plane area of the transparent substrate 210, the transparent substrate 210 is fixed so as to close the opening 232. In this state, the four sides 210 a to 210 d of the transparent substrate 210 are supported by a region around the opening 232 in the reflecting plate 230. That is, the four sides 210 a to 210 d of the transparent substrate 210 are in a state of overlapping with the area around the opening 232 in the reflector 230.

  The plurality of light emitting elements 100 mounted on the transparent substrate 210 face the opening 232 in a state where the transparent substrate 210 is fixed to the reflecting plate 230. In other words, the opening 232 functioning as a light transmission portion is provided in a region facing the plurality of light emitting elements 100. Therefore, an opening 232 is located in a region immediately below each light emitting element 100.

  The transparent substrate 210 is fixed on the reflector 230 with an adhesive (not shown). This adhesive is made of a resin material having translucency. Specifically, the adhesive that fixes the transparent substrate 210 and the reflecting plate 230 is made of, for example, a silicone resin. In a state where the reflecting plate 230 and the transparent base 210 are fixed, the electrode pad 220 of the transparent base 210 is insulated and separated from the reflecting plate 230.

  Referring to FIG. 2, the transparent substrate 210 is covered with the sealing resin layer 250. The sealing resin layer 250 includes a first sealing resin layer 252 formed on the upper surface of the reflecting plate 230 and a second sealing resin layer 254 formed on the lower surface of the reflecting plate 230. The first sealing resin layer 252 is formed so as to cover the surface 212 and the side surface 216 of the transparent substrate 210. The second sealing resin layer 254 is formed so as to cover the back surface 214 (the portion exposed from the opening 232) of the transparent substrate 210. The sealing resin layer 250 is made of a silicone resin that is a transparent resin excellent in heat resistance and light resistance. A plurality of fluorescent particles 260 (phosphors) are dispersed in the sealing resin layer 250.

  Referring to FIG. 3, the first sealing resin layer 252 is formed in a substantially rectangular shape when seen in a plan view. Therefore, the first sealing resin layer 252 has four sides 252a to 252d. The first sealing resin layer 252 also has end portions 252e to 252h that coincide with the four sides 252a to 252d, respectively. The first sealing resin layer 252 is formed on the upper surface of the reflection plate 230 so that the four sides 252a to 252d correspond to the sides 230a to 230d (end portions 230e to 230h) of the reflection plate 230.

  Referring to FIG. 8, the second sealing resin layer 254 is formed in a substantially rectangular shape when seen in a plan view. Therefore, the second sealing resin layer 254 also has four sides 254a to 254d. The second sealing resin layer 254 is formed on the lower surface of the reflection plate 230 so that the four sides 254a to 254d correspond to the sides 230a to 230d (end portions 230e to 230h) of the reflection plate 230. In the central region of the second sealing resin layer 254, an opening 256 for exposing the through hole 218 of the transparent substrate 210 is formed. Since the second sealing resin layer 254 directly affects the heat dissipation characteristics, the thickness is preferably 50 μm or less. More preferably, the thickness of the second sealing resin layer 254 is 10 μm or less.

As the phosphor, a YAG (yttrium, aluminum, garnet) phosphor or the like often used in white LEDs may be used. Further, as the phosphor, for example, Ce: YAG (cerium activated yttrium, aluminum, garnet) phosphor (Y ₃ Al ₅ O ₁₂ : Ce, (Y, Gd) ₃ Al ₅ O ₁₂ : Ce, etc.), Eu: BOSE (Europium-activated barium / strontium / orthosilicate) phosphor, Eu: SOSE (europium-activated strontium / barium / orthosilicate) phosphor, europium-activated α-sialon phosphor, Ce: TAG (cerium-activated terbium / aluminum / garnet) phosphor Body (Tb ₃ Al ₅ O ₁₂ : Ce, etc.), alkaline earth (Eu-activated M ₂ Si ₅ N ₈ : Eu, MSi ₁₂ O ₂ N ₂ : Eu, etc., Ce-activated Ca ₃ SC ₂ Si ₃ O ₁₂ ), Cousins -Eu (Eu Fukatsu CaAlSi ₃ N _3), and, La San窒Things -Ce Ce Fukatsu _{LaAl (Si 6 -zAl 2) N} 10 -z0, can be applied to β sialon and the like. From (Sr, Ba, Mg) ₂ SiO ₄ : Eu, Ca ₃ (Sc, Mg) ₂ Si ₃ O ₁₂ : Ce, etc., green phosphor, (Sr, Ca) AlSiN ₃ : Eu, CaAlSiN ₃ : Eu, etc. A red phosphor such as (Si, Al) ₆ (O, N) ₈ : Eu, a yellow phosphor composed of (Ba, Sr) ₂ SiO ₄ : Eu, or the like may be used. Nano fluorescent substance etc. can also be used suitably.

  The reflector 230 described above plays three major roles in the light emitting device 200. The first role is to efficiently reflect the light emitted from the light emitting element 100 and the phosphor. By playing this role, light can be effectively extracted from the light emitting device (hereinafter sometimes referred to as “package”). The second role is to uniformly dissipate the heat generated when driving the light emitting element 100 in the plane and efficiently dissipate heat. By playing this role, heat radiation with high in-plane uniformity is realized. The third role is a role as a base when the sealing resin layer 250 is formed. By playing this role, as will be described later, the side surface 216 (216a to 216d) of the transparent substrate 210 can be easily covered with the sealing resin layer 250 containing the phosphor. Accordingly, the front surface 212, the back surface 214, and the side surfaces 216 (216a to 216d) of the transparent substrate 210 can be easily covered with the sealing resin layer 250, so that the light emission color of the light emitting element 100 is maintained from the transparent substrate 210. A region where a large amount of light is emitted can be easily eliminated, and a light emitting device having a uniform emission color can be easily realized.

<< Configuration of Light Emitting Element 100 >>
Referring to FIG. 9, the light emitting device 100 according to the present embodiment includes a growth substrate 110 having translucency with respect to light emitted from itself. As a growth substrate, generally a substrate having translucency such as a sapphire substrate and a nitride semiconductor substrate (for example, a GaN substrate, an AlInGaN substrate, an AlGaN substrate, an AlN substrate, etc.), a SiC substrate, or a quartz substrate is preferable. The growth substrate 110 has a main surface 110a. On the main surface 110a of the growth substrate 110, a multilayer structure 150 including a semiconductor multilayer film is formed. The multilayer structure 150 includes an n-type layer 120, an MQW light emitting layer 130 having an MQW (Multiple Quantum Well) structure, and a p-type layer 140, which are sequentially formed from the growth substrate 110 side.

  In this embodiment, a sapphire substrate is used as the growth substrate 110. The thickness of the growth substrate 110 is about 120 μm, for example. The n-type layer 120 includes a buffer layer, an underlayer, an n-type nitride semiconductor layer, a low-temperature n-type GaN / InGaN multilayer structure, and a superlattice layer as an intermediate layer (referred to above) on the main surface 110a of the growth substrate 110. Neither is shown.) Is formed in this order from the main surface 110a side. In the present embodiment, the superlattice layer means a layer composed of crystal lattices whose periodic structure is longer than the basic unit lattice by alternately stacking very thin crystal layers. In the p-type layer 140, a p-type AlGaN layer, a p-type GaN layer, and a high-concentration p-type GaN layer (all of which are not shown) are formed in this order from the MQW light-emitting layer 130 side on the MQW light-emitting layer 130. Is made up of.

The buffer layer is made of, for example, Al _s0 Ga _t0 N (0 ≦ S0 ≦ 1, 0 ≦ t0 ≦ 1, s0 + t0 ≠ 0). The buffer layer is more preferably composed of an AlN layer or a GaN layer. A very small part of N (nitrogen) (for example, about 0.5% to 2%) may be replaced with O (oxygen). By doing so, the buffer layer is formed so as to extend in the normal direction of the main surface 110a of the growth substrate 110, so that a buffer layer made of an aggregate of columnar crystals with uniform crystal grains is obtained. The thickness of the buffer layer is not particularly limited, but is preferably 3 nm or more and 100 nm or less, and more preferably 5 nm or more and 50 nm or less.

The underlayer is made of, for example, Al _{s1 Gat1} In _u1 N (0 ≦ s1 ≦ 1, 0 ≦ t1 ≦ 1, 0 ≦ u1 ≦ 1, s1 + t1 + u1 ≠ 0). The underlayer is more preferably made of Al _s1 Ga _t1 N (0 ≦ s1 ≦ 1, 0 ≦ t1 ≦ 1, s1 + t1 ≠ 1), and more preferably made of a GaN layer. The thickness of the underlayer is preferably 1 μm or more and 8 μm or less.

The n-type nitride semiconductor layer is made of a layer in which, for example, Al _{s2 Gat2} In _u2 N (0 ≦ s2 ≦ 1, 0 ≦ t2 ≦ 1, 0 ≦ u2 ≦ 1, s1 + t1 + u1≈1) is doped with n-type impurities. . In the n-type nitride semiconductor layer, Al _s2 Ga _1-s2 N (0 ≦ s2 ≦ 1, preferably 0 ≦ s2 ≦ 0.5, more preferably 0 ≦ s2 ≦ 0.1) is doped with n-type impurities. More preferably, the layer is composed of different layers. Si is used for the n-type impurity. The n-type doping concentration (different from the carrier concentration) is not particularly limited, but is preferably 1 × 10 ¹⁹ cm ⁻³ or less.

  The low-temperature n-type GaN / InGaN multilayer structure has a function of relieving stress from the growth substrate 110 and the underlayer on the MQW light emitting layer 130. This low temperature n-type GaN / InGaN multilayer structure includes an n-type InGaN layer having a thickness of about 7 nm, an n-type GaN layer having a thickness of about 30 nm, an n-type InGaN layer having a thickness of about 7 nm, and a thickness of about 20 nm. It has a multilayer structure in which n-type GaN layers having n are alternately stacked.

The superlattice layer has a superlattice structure in which wide bandgap layers and narrow bandgap layers are alternately stacked. The periodic structure is longer than the basic unit cell of the semiconductor material forming the wide band gap layer and the basic unit cell of the semiconductor material forming the narrow band gap layer. The length of one cycle of the superlattice layer (the total thickness of the thickness of the wide band gap layer and the thickness of the narrow band gap layer) is shorter than the length of one cycle of the MQW light emitting layer 130. The specific thickness of the superlattice layer is, for example, not less than 1 nm and not more than 10 nm. Each wide band gap layer is made of, for example, Al _a Ga _b In _(1-ab) N (0 ≦ a <1, 0 <b ≦ 1). Each wide band gap layer is preferably composed of a GaN layer. Each narrow band gap layer is preferably made of a semiconductor material having a band gap smaller than that of the wide band gap layer and larger than each well layer (not shown) of the MQW light emitting layer 130. Each narrow band gap layer is made of, for example, Al _a Ga _b In _(1-ab) N (0 ≦ a <1, 0 <b ≦ 1). Each narrow band gap layer is preferably composed of Ga _b In _(1-b) N (0 <b ≦ 1). Note that when both the wide band gap layer and the narrow band gap layer are undoped, the driving voltage increases. Therefore, at least one of the wide band gap layer and the narrow band gap layer is preferably doped with an n-type impurity.

The MQW light emitting layer 130 has a multiple quantum well structure in which barrier layers and well layers (both not shown) are alternately stacked. The length of one cycle of MQW light emitting layer 130 (the total thickness of the barrier layer and the well layer) is, for example, not less than 5 nm and not more than 100 nm. The composition of each well layer is adjusted according to the emission wavelength required for the semiconductor light emitting device. For example, the composition of each well layer can be Al _c Ga _d In _(1-cd) N (0 ≦ c <1, 0 <d ≦ 1). The composition of each well layer is more preferably In _e Ga _(1-e) N (0 <e ≦ 1) that does not contain Al. The composition of each well layer is preferably the same. By doing so, in each well layer, the wavelength of light emitted by recombination of electrons and holes can be made the same. Therefore, it is preferable because the emission spectrum width of the semiconductor light emitting device can be narrowed. The thickness of each well layer is preferably 1 nm or more and 7 nm or less.

The barrier layer preferably has a larger band gap energy than the well layer. The composition of each barrier layer _may be an _{Al f Ga g In (1-} f-g) N (0 ≦ f <1,0 <g ≦ 1). The composition of each barrier layer is In _h Ga _(1-h) N (0 <h ≦ 1) which does not contain Al, or Al _f Ga _g In _(1-f ) in which the lattice constants of the well layers are substantially matched. _-G) More preferably, N (0 ≦ f <1, 0 <g ≦ 1). As the thickness of each barrier layer decreases, the driving voltage decreases. On the other hand, when the thickness is extremely small, the light emission efficiency tends to decrease. Therefore, the thickness of each barrier layer is preferably 1 nm or more and 10 nm or less, and more preferably 3 nm or more and 7 nm or less.

  The well layer and the barrier layer are doped with n-type impurities. However, the well layer and the barrier layer may not be doped with n-type impurities.

The p-type layer 140 is made of a layer in which, for example, Al _{s4 Gat4} In _u4 N (0 ≦ s4 ≦ 1, 0 ≦ t4 ≦ 1, 0 ≦ u4 ≦ 1, s4 + t4 + u4 ≠ 0) is doped with a p-type impurity. The p-type layer 140 is more preferably composed of a layer in which Al _s4 Ga _1-s4 N (0 <s4 ≦ 0.4, preferably 0.1 ≦ s4 ≦ 0.3) is doped with a p-type impurity. preferable. The carrier concentration in the p-type layer 140 is preferably 1 × 10 ¹⁷ cm ⁻³ or more. Here, since the activation rate of the p-type impurity is about 0.01, the p-type doping concentration (different from the carrier concentration) in the p-type layer 140 is preferably 1 × 10 ¹⁹ cm ⁻³ or more. However, the p-type doping concentration may be lower in a layer close to the MQW light emitting layer 130 (for example, a p-type AlGaN layer). The thickness of p-type layer 140 (the total thickness of the three layers) is not particularly limited, but can be, for example, 50 nm or more and 1000 nm or less. If the thickness of the p-type layer 140 is reduced, the heating time during the growth can be shortened, so that diffusion of p-type impurities into the MQW light emitting layer 130 can be suppressed.

  The multilayer structure 150 further includes an exposed portion that is a region where a part of the n-type layer 120 is exposed, and a mesa portion that is a region outside the exposed portion.

  Referring to FIGS. 9 and 10, n-side electrode 160 is formed on the upper surface of exposed portion (on n-type layer 120). The n-side electrode 160 includes a pad portion 160a that is a wire bond region, and an elongated protrusion 160b (branch electrode) that is formed integrally with the pad portion 160a for the purpose of current diffusion. A p-side electrode 180 is formed on the upper surface of the mesa part (on the p-type layer 140) with a translucent electrode 170 interposed therebetween. The translucent electrode 170 is formed in a wide area over a relatively wide range on the mesa portion. The p-side electrode 180 is formed in a partial region on the translucent electrode 170. The p-side electrode 180 includes a pad portion 180a which is a wire bond region, and an elongated protruding portion 180b (branch electrode) which is formed integrally with the pad portion 180a for the purpose of current diffusion.

  The n-side electrode 160 has a multilayer structure in which, for example, a titanium layer, an aluminum layer, and a gold layer are stacked in this order on the n-type layer 120. The thickness of the n-side electrode 160 is, for example, about 1 μm. Assuming strength when wire bonding is performed, the n-side electrode 160 only needs to have a thickness of about 1 μm.

  The translucent electrode 170 is made of, for example, ITO (Indium Tin Oxide). The thickness is, for example, 20 nm or more and 200 nm or less. The p-side electrode 180 has a multilayer structure in which, for example, a nickel layer, an aluminum layer, a titanium layer, and a gold layer are stacked in this order on the translucent electrode 170. The thickness of the p-side electrode 180 is about 1 μm, for example. The p-side electrode 180 may have a thickness of about 1 μm assuming the strength when wire bonding is performed.

An insulating transparent protective film 190 made of SiO ₂ is provided on the upper surface of the light emitting element 100. The transparent protective film 190 is formed so as to cover almost the entire upper surface of the light emitting element 100. However, the transparent protective film 190 is patterned so as to expose the pad portion 180a of the p-side electrode 180 and the pad portion 160a of the n-side electrode 160.

[Path of light emitted from light emitting element 100]
A path of light emitted from the light emitting device 100 will be described with reference to FIG. In the light emitting device 200 including the transparent substrate 210, the light emitted from the light emitting element 100 is emitted to the outside of the package mainly through the following three routes (P route, Q route, and R route).

  The P route is a route in which light emitted upward from the light emitting element 100 is emitted to the outside through the first sealing resin layer 252. A part of the light emitted upward from the light emitting element 100 is absorbed by the phosphor dispersed in the first sealing resin layer 252, and the wavelength-converted light is emitted from the phosphor to the outside. The light emitted from the phosphor and the light having the emission color emitted from the light emitting element 100 are emitted together, and are emitted from the light emitting device 200 to the outside as, for example, white light.

  The Q route is a route in which light emitted downward from the lower surface of the light emitting element 100 passes through the adhesive layer 240 and the transparent substrate 210 and is emitted to the outside from the opening 232 of the reflection plate 230. The light transmitted through the transparent substrate 210 is incident on the second sealing resin layer 254 through the opening 232. Part of the light incident on the second sealing resin layer 254 is absorbed by the phosphor dispersed in the second sealing resin layer 254, and the wavelength-converted light is emitted from the phosphor to the outside. The The light emitted from the phosphor and the light having the emission color emitted from the light emitting element 100 are emitted together, and are emitted from the light emitting device 200 to the outside as, for example, white light.

  In the R route, light emitted downward from the lower surface of the light emitting element 100 passes through the adhesive layer 240 and enters the transparent substrate 210, propagates through the transparent substrate 210, and is transmitted from the side surface 216 of the transparent substrate 210 to the outside. This is the route that is emitted.

  In the case where the phosphor is not contained in the adhesive layer 240 as in the present embodiment, the light that passes through the adhesive layer 240 and enters the transparent substrate 210 is light that is emitted from the light emitting element 100 and remains in the emission color. is there. In the R route, light that remains in the emission color of the light emitting element 100 propagates through the transparent substrate 210 and is emitted from the side surface 216 of the transparent substrate 210.

  At this time, if there is no appropriate amount of the phosphor in the vicinity of the side surface 216 of the transparent substrate 210, a large amount of light in the emission color of the light emitting element 100 is emitted from the side surface 216 of the transparent substrate 210. When the color of light emitted from the light emitting element 100 is, for example, blue, a blue streak-like light emission pattern is formed, which is very problematic when used as a light source such as a light bulb.

  In the present embodiment, as described above, in addition to the front surface 212 and the back surface 214 of the transparent substrate 210, the four side surfaces 216 (216a to 216d) are also covered with the sealing resin layer 250 containing a phosphor. That is, not only the front surface 212 and the back surface 214 of the transparent substrate 210 but also the side surface 216 is completely covered with the sealing resin layer 250 containing an appropriate phosphor. Therefore, light that has propagated through the transparent substrate 210 and emitted from the side surface 216 of the transparent substrate 210 is incident on the first sealing resin layer 252. Part of the light incident on the first sealing resin layer 252 is absorbed by the phosphor dispersed in the first sealing resin layer 252 and the wavelength-converted light is emitted from the phosphor. The The light emitted from the phosphor and the light having the emission color emitted from the light emitting element 100 are emitted together, and are emitted from the light emitting device 200 to the outside as, for example, white light.

  As described above, in the present light emitting device 200, there is no region in which a large amount of light with the light emission color of the light emitting element 100 is emitted (for example, a region in which only the light with the light emission color of the light emitting element 100 is emitted) Light of uniform emission color (for example, white light) is emitted over a wide range.

[Relationship Between Sealing Resin Layer 250 and Transparent Base 210]
With reference to FIG.2 and FIG.3, the relationship between the 1st sealing resin layer 252 and the transparent base | substrate 210 is demonstrated. The distances from the respective end portions 210e to 210h of the transparent substrate 210 to the corresponding end portions 252e to 252h in the first sealing resin layer 252 are defined as distances d. A distance from the surface 212 of the transparent substrate 210 to the upper surface of the first sealing resin layer 252 (an outer surface facing the surface 212 of the transparent substrate 210) is a distance t. In this case, it is preferable that the distance d and the distance t have the relationship of the following formula (1).
d ≧ t (1)

  When the light emitted from the light emitting element 100 is blue light having a wavelength of 450 nm, for example, if the distance d is d <t with respect to the distance t, the light propagates through the transparent substrate 210 and from the side surface 216 of the transparent substrate 210. The emitted blue light cannot sufficiently excite the phosphor, and the blue light is emitted more strongly than the P route light. In this case, a uniform light source (for example, a white light source) cannot be obtained, and this blue light may appear as a line when mounted on an illumination device such as a light bulb.

  By satisfying the relationship of the above formula (1), the problem that the blue light looks like a line is solved. Therefore, it is preferable that the first sealing resin layer 252 is formed so that the distance d and the distance t satisfy the relationship of the above-described formula (1).

[Relationship Between Reflector 230 and Transparent Base 210]
With reference to FIG.2 and FIG.3, the relationship between the reflecting plate 230 and the transparent base | substrate 210 is demonstrated. The distances from the respective end portions 210e to 210h of the transparent substrate 210 to the corresponding end portions 230e to 230h in the reflecting plate 230 are defined as distance A, respectively. In this case, it is preferable that the distance A and the distance d have the relationship of the following formula (2).
A ≧ d (2)

  That is, the end portions 252e to 252h of the first sealing resin layer 252 are preferably formed so as to be located between the end portion of the transparent substrate 210 and the end portion of the reflection plate 230, respectively. By satisfying the relationship of the above formula (2), the side surface 216 (216a to 216d) of the transparent substrate 210 can be easily covered with the first sealing resin layer 252 containing the phosphor.

Since it is preferable that the distance d and the distance t have a relationship of d ≧ t, the distance A, the distance d, and the distance t have the relationship of the following formula (3). preferable.
A ≧ d ≧ t (3)

  With reference to FIG. 3 and FIG. 11, the distances from the respective end portions 232 a to 232 d of the opening 232 formed in the reflecting plate 230 to the corresponding end portions in the transparent substrate 210 are defined as distance B, respectively. The distance B is also the width of the overlapping area between the reflector 230 and the transparent substrate 210. The state of fixation (adhesion) between the transparent substrate 210 and the reflector 230 is determined by the distance B. In order to sufficiently fix the transparent substrate 210 and the reflector 230, the distance B is preferably 500 μm or more. On the other hand, as the distance B increases, the amount of light that passes downward through the opening 232 decreases. For this reason, the amount of light emitted downward can be controlled by appropriately adjusting the distance B.

Furthermore, distances from the respective end portions 232a to 232d of the opening 232 to the end of the light emitting element 100 located closest to the end portions 232a to 232d are set as distance C, respectively. The distance C affects the efficiency of light emitted from the light emitting element 100. Therefore, it is preferable that the distance C satisfies the following formula (4).
C> 0 (4)

That is, it is preferable that the plurality of light emitting elements 100 are mounted on the transparent substrate 210 so that all of the light emitting elements 100 are located in a region inside the opening 232 in a plan view. It has been found that the distance C is more preferable if the following expression (5) is satisfied in relation to the thickness x of the transparent substrate 210, since the light extraction efficiency becomes higher.
x ≧ C (5)

[Production method]
A manufacturing method of the light emitting device 200 according to the present embodiment will be described with reference to FIGS. 2, 4, 5, 7, 8, 12, and 13. First, a transparent substrate 210 as shown in FIG. 4 is prepared. At least the back surface 214 of the transparent substrate 210 is a non-smooth surface. For example, the back surface 214 of the transparent substrate 210 is not polished, and is a surface that remains uneven. In addition, irregularities such as stripes and dimples may be provided intentionally. By making the back surface 214 of the transparent substrate 210 a non-smooth surface, the light guided to the transparent substrate 210 from the bottom surface of the light emitting element 100 can be efficiently performed without providing a separate light-transmitting member or the like on the back surface 214 of the transparent substrate 210. Can be taken out well.

  Next, a through hole 218 for fixing the metal pillar 300 to a predetermined region of the transparent substrate 210 is formed. An electrode pad is formed in the region where the through hole 218 is formed. Referring to FIG. 12A, the electrode pads are formed on both surfaces of the transparent substrate 210. A connection portion 224 (see FIG. 5) formed of the same material as the electrode pad is formed on the inner side surface of the through hole 218. The electrode pad and the connection portion 224 can be integrally formed in the same process, for example. Alternatively, the step of forming the electrode pad may be performed before the step of forming the through hole 218, and the through hole 218 may be formed in the electrode pad formation region after the electrode pad is formed.

  Thereafter, the plurality of light emitting elements 100 are mounted on the surface 212 of the transparent substrate 210 with a die bond paste. Specifically, the light emitting element 100 is placed using a die bond paste made of a silicone resin and heated at 150 ° C. for 2 to 3 hours to cure the light emitting element 100 on the surface 212 of the transparent substrate 210. Adhere to.

  Referring to FIG. 12B, the transparent substrate 210 on which the plurality of light emitting elements 100 are mounted is fixed on the upper surface of the reflection plate 230 with an adhesive or the like. The reflector 230 is processed into a shape and dimensions as shown in FIG. Specifically, a metal plate made of an Al alloy is processed into a substantially rectangular shape, and an opening 232 is formed in the central portion. Through holes 234 to which the auxiliary metal pillar 310 (see FIG. 2) is fixed are formed at both ends in the extending direction of the reflector 230. Referring to FIG. 13, when the transparent substrate 210 is fixed to the reflector 230, the transparent substrate 210 is fixed so as to close the opening 232 with the transparent substrate 210. At this time, the plurality of light emitting elements 100 mounted on the transparent substrate 210 are adjusted so as to face the opening 232 of the reflecting plate 230. Note that the transparent substrate 210 is preferably fixed on the upper surface of the reflector 230 so that all of the plurality of light emitting elements 100 are located in the region inside the opening 232 when viewed in plan view.

  Referring to FIG. 12C and FIG. 13, after fixing the transparent substrate 210 to the reflecting plate 230, each light emitting element 100 is connected by a wire 242.

  Subsequently, referring to FIG. 12D, the phosphor is contained on the upper surface of the reflector 230 and on the transparent substrate 210 so as to cover the outer surface of the transparent substrate 210 including the side surface 216 of the transparent substrate 210. The applied transparent resin is applied by, for example, a potting method. At this time, the through hole 218 of the transparent substrate 210 is not filled with the transparent resin. Then, the transparent resin is cured by heating in an oven at a temperature of about 150 ° C. for about 2 to 3 hours. Furthermore, as shown in FIG. 12 (e), a transparent resin containing a phosphor is also applied to the lower surface of the reflector 230 on which the transparent substrate 210 is not mounted by, for example, a potting method. The transparent resin is cured by heating at a temperature of about 150 ° C. for about 2 to 3 hours. Also at this time, the through hole 218 of the transparent substrate 210 is prevented from being filled with the transparent resin. Further, as shown in FIG. 8, a transparent resin is applied so that the through hole 218 of the transparent substrate 210 is exposed from the lower surface of the reflecting plate 230.

  Thus, by applying and curing a transparent resin on each side of the transparent substrate, the transparent resin (encapsulating resin layer 250) containing the phosphor on both surfaces of the transparent substrate 210 by a very easy method such as a potting method. ) Can be formed. At this time, it is important that the transparent resin (encapsulating resin layer 250) containing the phosphor sufficiently wraps around the side surface 216 of the transparent substrate 210. In this case, the transparent resin can be formed so as to cover the transparent substrate 210 very easily by forming the reflector 230 serving as a base of the transparent resin (sealing resin layer 250) larger than the transparent substrate 210. Therefore, the sealing resin layer 250 can be formed in a state where the transparent resin (sealing resin layer 250) containing the phosphor is sufficiently wrapped around the side surface 216 of the transparent substrate 210.

  It should be noted that dams 30 and 32 as shown in FIGS. 12D and 12E are provided on the reflector 230 so that the transparent resin does not flow on the reflector 230 when applying the transparent resin. It may be provided. The dams 30 and 32 can be formed using, for example, a silicone resin and an epoxy resin.

  Thereby, the light emitting device 200 according to the present embodiment is manufactured. The metal pillar 300 and the auxiliary metal pillar 310 are fixed to the light emitting device 200 thus manufactured. Specifically, as shown in FIG. 2, the metal column 300 is inserted into the through hole 218 of the transparent substrate 210 to fix the metal column 300 to the transparent substrate 210. Further, the auxiliary metal pillar 310 is fixed to the through hole 234 of the reflector 230 with screws.

  Referring to FIG. 1, the light emitting device 200 to which the metal column 300 and the auxiliary metal column 310 are fixed is fixed to the main body portion of the lighting device, and the bulb 60 is attached to assemble the light bulb type LED lamp. Thereby, the illuminating device 50 which concerns on this Embodiment is manufactured.

[Effects of the present embodiment]
As is clear from the above description, the light emitting device 200 and the lighting device 50 according to the present embodiment have the effects described below.

  The plurality of light emitting elements 100 are mounted on a transparent substrate 210, and the transparent substrate 210 is fixed on the reflection plate 230. Heat generated in the light emitting element 100 is radiated through the reflector 230. By fixing the transparent substrate 210 on the reflecting plate 230, heat generated by driving a plurality of light emitting elements can be spread uniformly in the plane and efficiently radiated. That is, heat radiation with high in-plane uniformity can be realized. Therefore, for example, it is possible to suppress the heat from being accumulated in the central portion of the transparent substrate 210 or the occurrence of temperature unevenness in the plurality of light emitting elements at different temperatures.

  The reflector 230 to which the transparent substrate 210 is fixed is provided with openings 232 in regions facing the plurality of light emitting elements 100. The light emitted from the lower surface of the light emitting element 100 passes through the light-transmitting adhesive layer 240 and the transparent base 210 and is emitted from the opening 232 of the reflection plate 230. That is, light can be emitted also to the lower surface side of the reflecting plate 230. Therefore, since light can be emitted not only above the light emitting device 200 but also below, light can be emitted in a wide range.

  In the light emitting device 200, the transparent substrate 210 is covered with a sealing resin layer 250 containing a phosphor. Therefore, it is possible to suppress the light that remains in the emission color of the light emitting element 100 from propagating through the transparent substrate 210 and being emitted to the outside. Therefore, since it can suppress that many lights with the luminescent color of the light emitting element 100 are radiate | emitted, generation | occurrence | production of color unevenness can be suppressed. Further, by including the reflecting plate 230 for fixing the transparent substrate 210, the light emitted from the light emitting element 100 and the phosphor can be efficiently reflected by the reflecting plate 230, so that the light can be effectively taken out of the package. .

  Thus, according to the light emitting device 200, heat radiation with high in-plane uniformity can be realized, and light of uniform light emission color can be efficiently emitted in a wide range.

  Further, by making the formation region of the opening 232 in the reflecting plate 230 smaller than the plane area of the transparent substrate 210, the transparent substrate 210 on which the light emitting element 100 is mounted can be easily opposed to the opening 232. Thus, it can be fixed to the reflector 230.

  By fixing the light emitting element 100 on the transparent substrate 210 via the adhesive layer 240 that does not contain a phosphor, it is possible to suppress the thickness of the adhesive layer 240 from becoming too large, so that heat dissipation can be further improved. In the light emitting device 200, the transparent substrate 210 is covered with the sealing resin layer 250 containing a phosphor. Therefore, even when configured in this manner, light that remains in the emission color of the light emitting element 100 is contained in the transparent substrate 210. Can be prevented from being emitted to the outside. As a result, for example, it is possible to suppress the problem that blue light looks like a line while improving the heat dissipation characteristics.

  When forming the first sealing resin layer 252, the distance d from the end of the transparent base 210 to the end of the sealing resin layer 250 is set so that the distance d from the surface 212 of the transparent base 210 to the first sealing resin layer 252. By setting the distance to the upper surface to be t or more, the side surface 216 of the transparent substrate 210 can be easily covered with the first sealing resin layer 252 containing an appropriate amount of phosphor. Since the light propagating through the transparent substrate 210 and emitted from the side surface 216 of the transparent substrate 210 can sufficiently excite the phosphor in the first sealing resin layer 252 covering the side surface of the transparent substrate 210, the light emitting element It is possible to easily suppress the emission of a large amount of light with the 100 emission colors. As a result, the light emitted to the outside can be easily converted into light of uniform emission color.

  By making the distance A from the end of the transparent substrate 210 to the end of the reflector 230 equal to or greater than the distance d from the end of the transparent substrate 210 to the end of the sealing resin layer 250, the phosphor is easily contained. The transparent substrate 210 can be covered with the first sealing resin layer 252 to be performed. In addition, the side surface 216 of the transparent substrate 210 can be easily covered with the sealing resin layer 250 containing an appropriate amount of phosphor.

  Furthermore, when the distance from the end of the opening 232 to the light emitting element 100 closest to the end among the plurality of light emitting elements 100 is C, the distance C is configured to satisfy C> 0. Light emitted from the light emitting element 100 can be efficiently extracted from the opening 232 to the lower surface side of the reflector 230. Therefore, the light from the light emitting element 100 can be efficiently emitted to the outside over a wide range.

  Note that, when the reflector 230 is made of a metal material, the heat generated in the light emitting element 100 can be evenly spread in the plane and efficiently radiated. Thereby, the heat dissipation of the light emitting device 200 can be further improved.

  The lighting device 50 according to the present embodiment can be a bulb-type LED lamp that emits light over a wide range by mounting the light emitting device 200 as a light source. At this time, by supporting the light emitting device 200 with the metal column 300 and the auxiliary metal column 310 that also function as a heat radiating member, the heat generated in the light emitting element 100 can be radiated more efficiently.

(Second Embodiment)
Referring to FIG. 14, lighting device 500 according to the present embodiment is a light bulb-type LED lamp, similarly to lighting device 50 according to the first embodiment. The lighting device 500 includes a light emitting device 600 instead of the light emitting device 200 of the lighting device 50.

  Referring to FIG. 15, light emitting device 600 according to the present embodiment further includes a transparent sealing resin layer 650 that covers sealing resin layer 250 in light emitting device 200 according to the first embodiment.

  In this embodiment, since the sealing resin layer 250 is covered with the transparent sealing resin layer 650, the sealing resin layer (transparent resin layer) for sealing the light emitting element 100 has a two-layer structure. The outer transparent sealing resin layer 650 is made of, for example, a silicone resin. The transparent sealing resin layer 650 does not contain a phosphor.

  The surface of the transparent sealing resin layer 650 is spherical or convex. By forming the surface of the transparent sealing resin layer 650 in such a shape, the light emitted from the light emitting element 100 and the light emitted from the phosphor included in the sealing resin layer 250 are converted into a spherical or convex transparent sealing resin. The layer 650 can emit omnidirectionally to the surroundings.

  The transparent sealing resin layer 650 can also function as an optical lens. As a result, the light emitting device 600 capable of emitting uniform light in all directions is obtained. The transparent sealing resin layer 650 can be formed by, for example, transfer molding. By using a molding method such as transfer molding to form the transparent sealing resin layer 650, the surface of the transparent sealing resin layer 650 can be molded into a curved surface of any optical lens shape.

  The refractive index of the transparent sealing resin layer 650 is preferably the same or lower than that of the sealing resin layer 250 containing a phosphor from the viewpoint of light extraction.

(Third embodiment)
Referring to FIG. 16, in light emitting device 700 according to the present embodiment, transparent substrate 210 is fixed on the lower surface of reflecting plate 230. Specifically, the surface 212 of the transparent substrate 210 and the lower surface of the reflecting plate 230 are fixed by an adhesive (not shown). The plurality of light emitting elements 100 are located in a region inside the opening 232 of the reflection plate 230.

  In the light emitting device 700, the transparent substrate 210 is covered with a sealing resin layer 750 similar to the sealing resin layer 250. The sealing resin layer 750 includes a first sealing resin layer 752 formed on the upper surface of the reflecting plate 230 and a second sealing resin layer 754 formed on the lower surface of the reflecting plate 230. As in the first embodiment, the first sealing resin layer 752 and the second sealing resin layer 754 contain a phosphor.

  In the present embodiment, since the transparent substrate 210 is fixed to the lower surface of the reflector 230, the side surface 216 of the transparent substrate 210 is covered with the second sealing resin layer 754. That is, the second sealing resin layer 754 is formed on the lower surface of the reflection plate 230 so as to cover the back surface 214 and the side surface 216 of the transparent substrate 210. On the other hand, the first sealing resin layer 752 is formed on the upper surface of the reflection plate 230 so as to seal the surface 212 of the transparent substrate 210, the plurality of light emitting elements 100, and the wires 242.

  The light emitting device 700 having such a configuration has the same effect as the light emitting device 200 according to the first embodiment.

(Modification)
In the said embodiment, although the example which applied this invention to the light bulb type LED lamp was shown, this invention is not limited to such embodiment. The present invention can also be applied to an illumination device other than a bulb-type LED lamp.

  In the above-described embodiment, an example in which an opening as a light transmission part (light passage part) is formed on the reflection plate has been described. However, the light transmission part (light passage part) has, for example, a notch shape in addition to the opening part. It may be. An example of such a reflector is shown in FIGS. Referring to FIG. 17, reflector 1230 has a shape obtained by dividing reflector 230 into two parts. The reflection plate 1230 includes a reflection plate 1240 on one side and a reflection plate 1250 on the other side. The reflector 1240 has a notch 1242, and the reflector 1250 has a notch 1252. When the notch portions are faced to each other and the reflecting plate 1240 and the reflecting plate 1250 are brought together, the same shape as the reflecting plate 230 is obtained. Referring to FIG. 18, the reflecting plate 1240 and the reflecting plate 1250 are integrated by fixing the transparent substrate 210. Even when such a reflector 1250 is used, the same effect as that of the above embodiment can be obtained.

  In the said embodiment, although the example which formed one opening part as a light transmissive part (light passage part) in the reflecting plate was shown, this invention is not limited to such an embodiment. The light transmission part of the reflection plate may be formed by a plurality of openings. An example of such a reflector is shown in FIGS. Referring to FIGS. 19 and 20, the reflection plate 1330 has a plurality of openings 1332 to 1334. The openings 1332 to 1342 are formed in a region facing the light emitting element 100. That is, a plurality of openings 1332 to 1342 are formed in the reflector 1330 so as to be located in a region immediately below the light emitting element 100. The opening 1344 is formed to expose the through hole 218 of the transparent substrate 210. The metal column can be fixed to the transparent substrate 210 by the opening 1344. Thus, even when the light transmission part of the reflecting plate is formed by the plurality of openings 1332 to 1342, the same effects as those of the above embodiment can be obtained.

  In the said embodiment, although the example which formed the substantially rectangular shaped opening part in the reflecting plate was shown, this invention is not limited to such an embodiment. The planar shape of the opening may be a shape other than a rectangular shape. The planar shape of the opening may be, for example, a circular shape or an elliptical shape.

  In the above embodiment, the metal column may be fixed by screwing or the like. For example, the metal pillar 300A may be fixed with screws 810 as in the light emitting device 800 shown in FIG. In addition, the fixing method of a metal pillar and an auxiliary metal pillar can also use suitably other fixing methods, such as a rivet, caulking, welding, adhesion | attachment, latching, engagement, and fitting, other than screwing.

  In the above embodiment, an example using a transparent substrate made of sapphire has been described, but the present invention is not limited to such an embodiment. The constituent material of the transparent substrate may be other than sapphire. However, it is preferable that the constituent material of the transparent substrate has high thermal conductivity in addition to having optical transparency. As such a material having high thermal conductivity, for example, sapphire, GaN, beryllium oxide (beryllia), ZnO, SiC, Si, ZnS, AlN, SiC, diamond, ruby, and other single crystal materials or polycrystalline materials, Or the ceramic material etc. which were formed with those crystal bodies can be used.

  In particular, when a conductive member is used as the transparent substrate, continuity can be obtained even on the mounting surface of the light emitting element, so that only one electrode is sufficient for wire bonding. Therefore, the number of wires can be reduced to reduce the manufacturing cost and improve the yield. Therefore, the use of a conductive member for the transparent substrate can contribute to the improvement of reliability. In particular, since the wire may be disconnected due to a difference in thermal expansion coefficient in the resin for sealing the wire, such a risk can be reduced by reducing the number of wires used. In this case, it is preferable to use an insulating adhesive or the like as an adhesive for fixing the transparent substrate and the reflecting plate so that the transparent substrate and the reflecting plate are not short-circuited.

  In order to reduce reflection at the interface between the light emitting element and the transparent substrate, it is preferable to adjust the refractive index between them. When the element structure is supported on the growth substrate, it is preferable that the difference in refractive index between the growth substrate and the transparent substrate is small, or the refractive index of the growth substrate is larger than the refractive index of the transparent substrate. By determining both materials, light reflection can be reduced. For example, when using a light emitting device in which a semiconductor layer is grown on a sapphire substrate as a growth substrate, it is preferable to use a transparent substrate made of sapphire. A quartz transparent substrate having a refractive index lower than that of the sapphire transparent substrate may be used. In the case of a GaN-based semiconductor element having no growth substrate, it is preferable to use a transparent substrate made of GaN, and it is preferable to use a transparent substrate made of sapphire and quartz having a refractive index lower than that of GaN.

  In the above embodiment, the light emitted from the growth substrate side of the light emitting element mounted on the surface of the transparent substrate passes through the transparent substrate and further contains the phosphor formed on the back surface of the transparent substrate. 2 is incident on the sealing resin layer 2 and is transmitted as it is to be emitted below the package, or is converted into a green or red wavelength by the phosphor in the second sealing resin layer, and the lower part of the package. Is emitted. For this reason, it is preferable that the difference in refractive index between the transparent substrate and the sealing resin layer is small. Therefore, the transparent resin constituting the sealing resin layer is a silicone resin having a refractive index of about 1.35 to 1.58, and the transparent substrate is a ceramic substrate that is a sintered body of aluminum oxide (for example, sapphire). A transparent substrate of sapphire, a transparent substrate of quartz, etc. are considered suitable. As the relationship of refractive index, the relationship of growth substrate ≧ transparent substrate ≧ transparent resin (sealing resin layer) is preferable.

  In the said embodiment, although the example which made the back surface of the transparent base | substrate the non-smooth surface was shown, this invention is not limited to such embodiment. The back surface of the transparent substrate may be a smooth surface, or both the front and back surfaces of the transparent substrate may be non-smooth surfaces. Further, the front and back surfaces of the transparent substrate may be curved. In this way, since the components of light totally reflected on the front and back surfaces of the transparent substrate can be reduced, it is possible to prevent light from being confined inside the transparent substrate and suppressing light extraction.

  In the above embodiment, an example in which a silicone resin is used for a die bond paste for fixing a light emitting element has been described, but the present invention is not limited to such an embodiment. The die bond paste in the above embodiment is not particularly limited as long as it is a material capable of fixing the light emitting element and the transparent substrate and transmitting the light from the light emitting element. For example, thermoplastic resin and thermosetting Organic materials such as conductive resins, inorganic materials, and hybrid materials thereof can be used. Specific examples include a die bond paste made of an epoxy resin that is a thermosetting resin, an acrylic resin and a polyimide resin that are thermoplastic resins, a silicone resin having high thermal stability, and the like. When the die bond paste (adhesive layer) is colored due to deterioration due to light, heat, or the like, the light extraction efficiency decreases, so it is desirable to have heat resistance, light resistance, and thermal conductivity. Furthermore, in order to adjust the coefficient of thermal expansion of the die bond paste or increase the conductivity, a filler can be contained in these resins. Since a light scattering effect in the die bond paste can be increased by adding a filler, it is preferable for light extraction.

  In the said embodiment, although the example which comprised the metal pillar and the auxiliary | assistant metal pillar from Al alloy was shown, this invention is not limited to such embodiment. For example, a metal column and an auxiliary metal column that are provided with metal plating capable of reflecting light from the light emitting element on the surface of a material excellent in thermal conductivity and conductivity can be used. Examples of the constituent material (material) of the metal column and excellent in thermal conductivity include copper, Kovar (registered trademark) that is an alloy of iron, nickel, and cobalt, and an alloy of Kovar and copper. Since these materials have better thermal conductivity than ordinary conductors, they can improve heat dissipation and cope with higher output. In particular, as a material for metal columns and auxiliary metal columns, it has excellent corrosion resistance, wear resistance, plating properties, brazing properties, stress corrosion cracking resistance, conductivity, thermal conductivity, and workability such as pressing, bending, drawing, etc. It is preferable to use excellent phosphor bronze. Further, it is preferable to perform copper strike plating in advance before plating the surface of the material. In this way, by removing the oxide of the material and performing activation and plating at the same time, the material is covered with a copper film with good adhesion, so that the subsequent plating is improved and the corrosion resistance is also improved. Can be improved. Furthermore, dissolution of the metal material in the plating bath can be prevented, and contamination of the bath can also be prevented. It is preferable that the surface-treated material has a plating capable of reflecting light from the light emitting element. In particular, a conductive film having a glossiness of 90 or more is preferably provided as plating. The glossiness is defined as a glass surface with a refractive index of 1.567 and a glossiness of 0 when the light from the light emitting element is incident at 60 ° based on JIS standards. A value measured with a VSR300A minute surface color difference meter manufactured by Kogyo Co., Ltd. can be used. Specific examples of the main plating material include Au, Ag, and Al.

  In the said embodiment, although the example which comprised the reflecting plate from Al alloy was shown, this invention is not limited to such embodiment. The reflector may be made of a material other than the Al alloy. For example, a material that can be used for the above-described metal column can also be used for the reflector.

  In the said embodiment, although the example which fixes a transparent base | substrate on a reflecting plate using the adhesive agent which consists of silicone resin was shown, this invention is not limited to such embodiment. The adhesive which fixes a transparent base | substrate on a reflecting plate should just have a translucency or a high light reflectivity. As such an adhesive, a silicone resin excellent in heat resistance and light resistance can be suitably used. In addition to the silicone resin, for example, an epoxy resin that is a thermosetting resin, an acrylic resin that is a thermoplastic resin, a polyimide resin, and the like Can also be used. Furthermore, what added the filler for improving heat conduction in the adhesive agent, etc. may be used. As the filler, generally AlN having a small particle diameter can be used.

  In the above embodiment, an example in which the light emitting device is supported by using one metal column and two auxiliary metal columns has been described, but the present invention is not limited to such an embodiment. For example, the light emitting device may be supported by two metal pillars. Further, the light emitting device may be supported by only one metal column.

  In the above embodiment, an example in which a plurality of light emitting elements of the same type is used has been described, but the present invention is not limited to such an embodiment. The plurality of light emitting elements mounted on the light emitting device may include different types of elements. Note that the number of light-emitting elements mounted on the light-emitting device can be changed as appropriate.

  In the above embodiment, an example in which a plurality of light emitting elements mounted on a transparent substrate are connected in series and parallel on the surface of the transparent substrate has been described, but the present invention is not limited to such an embodiment. For example, all of the plurality of light emitting elements may be connected in series, or all may be connected in parallel.

  In the above-described embodiment, an example in which the light-emitting element is mounted on a transparent substrate with a die-bond paste (adhesive layer) that does not contain a phosphor is shown, but the present invention is not limited to such an embodiment. For example, the light emitting element may be mounted using a translucent die bond paste containing a phosphor. In that case, it is preferable to use a phosphor having an average particle size of 200 nm or less as the phosphor dispersed in the die bond paste. Dispersion of such a small particle size phosphor can effectively suppress a decrease in heat dissipation. The “average particle size” means the particle size (average particle size d50) at an integrated value of 50% in the particle size distribution obtained by the laser diffraction / scattering method.

  In the above-described embodiment, an example in which the metal column and the auxiliary metal column are provided with a function as a lead terminal (introduction wire) has been described, but the present invention is not limited to such an embodiment. You may make it provide a lead wire (introduction wire) etc. separately, without having a function as a lead terminal in a metal pillar and an auxiliary metal pillar. Furthermore, for example, a wiring layer insulated from the reflecting plate may be formed on the reflecting plate. In this case, it is preferable that the reflector plate and the metal column are directly in contact with each other. Since the metal column plays a role of radiating the heat of the transparent base and the reflecting plate to the lower part of the lighting device, the heat radiation can be further improved by directly contacting the metal column and the reflecting plate.

  In the above-described embodiment, an example in which the transparent substrate, the reflecting plate, and the like are formed in a substantially rectangular shape when viewed in plan view is shown, but the present invention is not limited to such an embodiment. The shapes of the transparent substrate and the reflecting plate may be other than a rectangular shape. The shapes of the transparent substrate and the reflector may be, for example, a circular shape or an elliptical shape. The planar shape of the sealing resin layer may also be a shape other than a substantially rectangular shape, like the transparent substrate. Note that the transparent substrate and the reflector may have the same shape or different shapes.

In the above embodiment, the phosphor dispersed in the first sealing resin layer and the phosphor dispersed in the second sealing resin layer may be the same. Furthermore, the chromaticity of the light emitted in the upper direction and the lower direction of the light emitting device is changed intentionally by changing the amount of the phosphor contained in the first sealing resin layer and the second sealing resin layer. May be. The phosphors contained in the first sealing resin layer and the second sealing resin layer may be different. For example, different phosphors selected from the phosphor group described above are included, and the first sealing resin layer is a green phosphor, and the second sealing resin layer is a different type of phosphor such as a red phosphor. May be included. For example, Eu-activated CaAlSi ₃ N ₃ can be used as the red phosphor. As the green phosphor, for example, (Sr, Ba, Mg) ₂ SiO ₄ : Eu, Ca ₃ (Sc, Mg) ₂ Si ₃ O ₁₂ : Ce can be used.

  In the above embodiment, the distance A, the distance B, the distance C, and the distance d are not necessarily configured to be the same distance at each end of the transparent substrate and the reflector, but each end has In any case, it is preferable that the distance A, the distance B, the distance C, and the distance d are configured so as to satisfy the relationships of the above-described formulas (1) to (5).

  In the above embodiment, the element structure of the light-emitting element can be changed as appropriate. For example, in the first embodiment, an example in which a transparent electrode made of ITO is used as the transparent electrode of the light emitting element has been described. However, the transparent electrode uses a transparent conductive film such as IZO (Indium Zinc Oxide) in addition to ITO. You can also. In addition to the above, the n-side electrode of the light emitting element may be, for example, W / Al, Ti / Al, Ti / Al / Ni / Au, W / Al / WPt / Au, and Al / Pt / Au.

  In the said 2nd Embodiment, although the example which set the transparent sealing resin layer as the structure which a fluorescent substance does not contain was shown, this invention is not limited to such an embodiment. It can also be set as the structure which contained the fluorescent substance in the transparent sealing resin layer. Furthermore, it is good also as a structure which fluorescent substance was disperse | distributed to some transparent sealing resin layers (for example, one of the surface side of a transparent base | substrate, and a back surface side).

  In the said 2nd Embodiment, although the example which comprised the transparent sealing resin layer from the silicone resin was shown, this invention is not limited to such an embodiment. The transparent sealing resin layer may be composed of a material other than the silicone resin. Examples of materials other than the silicone resin include epoxy resin and glass.

  Embodiments obtained by appropriately combining the techniques disclosed above are also included in the technical scope of the present invention.

  The embodiment disclosed this time is merely an example, and the present invention is not limited to the embodiment described above. The scope of the present invention is indicated by each claim in the scope of claims after taking into account the description of the detailed description of the invention, and all modifications within the meaning and scope equivalent to the wording described therein are included. Including.

50, 500 Illuminating device 60 Valve 70 Cap part 80 Reflective substrate 100 Light emitting element 110 Growth substrate 200, 600, 700, 800 Light emitting device 210 Transparent substrate 210e-210h, 230e-230h,
232a to 232d, 252e to 252h End 212 Surface 214 Back surface 216 Side surface 218 Through hole 220 Electrode pad 230, 1230, 1330 Reflector plate 232 Opening 240 Adhesive layer 250, 750 Sealing resin layer 252, 752 First sealing resin Layers 254, 754 Second sealing resin layer 300, 300A Metal pillar 310 Auxiliary metal pillar 650 Transparent sealing resin layer

Claims (10)

A plurality of light emitting elements;
A transparent substrate on which the plurality of light emitting elements are mounted;
A reflector to which the transparent substrate is fixed;
A transparent resin layer containing a phosphor and formed to cover the transparent substrate,
The reflection plate has a light transmission part constituted by an opening through which light emitted from the plurality of light emitting elements is transmitted;
The transparent substrate is fixed on a region around the opening of the reflector by being disposed on the reflector so as to cover the opening .
The light transmission part is provided in a region facing the plurality of light emitting elements,
The transparent substrate has an end, and the transparent resin layer and the reflecting plate each have an end corresponding to the end of the transparent substrate,
The distance when the distance from the end of the transparent substrate to the end of the transparent resin layer is d and the distance from the end of the transparent substrate to the end of the reflector is A. d and the distance A are light emitting devices having a relationship of A ≧ d . A plurality of light emitting elements;
A transparent substrate on which the plurality of light emitting elements are mounted;
A reflector to which the transparent substrate is fixed;
A transparent resin layer containing a phosphor and formed to cover the transparent substrate,
The reflection plate has a light transmission part constituted by an opening through which light emitted from the plurality of light emitting elements is transmitted;
The transparent substrate is fixed on a region around the opening of the reflector by being disposed on the reflector so as to cover the opening.
The light transmission part is provided in a region facing the plurality of light emitting elements ,
The transparent substrate includes one main surface and the other main surface which is a surface opposite to the one main surface,
The light emitting element is mounted on the one main surface of the transparent substrate,
The light emitting device , wherein the reflector is fixed to the other main surface of the transparent substrate . Further comprising an adhesive layer not containing a phosphor, fixing the light emitting element on the transparent substrate,
The light emitting device according to claim 1, wherein the adhesive layer has translucency. The transparent substrate has an end, and the transparent resin layer has an end corresponding to the end of the transparent substrate,
The distance from the end of the transparent substrate to the end of the transparent resin layer is d, and the outer surface of the transparent substrate facing the mounting surface from the mounting surface on which the light emitting element is mounted. The light emitting device according to claim 2 , wherein the distance d and the distance t have a relationship of d ≧ t, where t is the distance to the surface. The light transmitting portion has an end;
The distance C is C> 0, where C is a distance from the end of the light transmission part to the light emitting element closest to the end among the plurality of light emitting elements. 5. The light emitting device according to any one of 4.   The light-emitting device according to claim 1, wherein the reflecting plate is made of a metal material.   The light emitting device according to claim 1, wherein the transparent substrate has a thickness of 200 μm or more and 6000 μm or less. The transparent resin layer may include a first sealing resin layer formed on one major surface and a second sealing resin layer formed on the other on the main surface, to claim 2 The light-emitting device of description. Mounting a plurality of light emitting elements on a transparent substrate;
Forming a reflector having a light transmission portion comprising an opening;
Fixing the transparent substrate on the reflector so that the plurality of light emitting elements face the light transmitting portion;
Forming a transparent resin layer containing a phosphor so as to cover the transparent substrate,
It said step of fixing, by arranging the transparent substrate so as to cover the opening on the reflector, viewed including the step of fixing the transparent substrate in the region of the periphery of the opening of the reflector,
The step of forming the reflection plate includes the step of providing the light transmission part in a region facing the plurality of light emitting elements,
The step of fixing the transparent substrate corresponds to a distance from the end of the transparent substrate to the end of the transparent resin layer corresponding to the end, and d from the end of the transparent substrate. And a step of arranging and fixing the transparent substrate so that the distance d and the distance A have a relationship of A ≧ d, where A is the distance to the end of the reflector. Production method. Mounting a plurality of light emitting elements on one main surface on the transparent substrate;
Forming a reflector having a light transmission portion comprising an opening;
Fixing the transparent substrate on the reflector so that the plurality of light emitting elements face the light transmitting portion;
Forming a transparent resin layer containing a phosphor so as to cover the transparent substrate,
In the fixing step, the other main surface of the transparent substrate opposite to the one main surface is opposed to the reflector, and the transparent substrate is placed on the reflector so as to cover the opening. A method of manufacturing a light-emitting device, comprising a step of fixing the transparent substrate to a region around the opening of the reflecting plate by arranging.

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