TW200814382A - Process for producing semiconductor memory device - Google Patents
Process for producing semiconductor memory device Download PDFInfo
- Publication number
- TW200814382A TW200814382A TW096119969A TW96119969A TW200814382A TW 200814382 A TW200814382 A TW 200814382A TW 096119969 A TW096119969 A TW 096119969A TW 96119969 A TW96119969 A TW 96119969A TW 200814382 A TW200814382 A TW 200814382A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- ruthenium
- compound
- memory device
- stable composition
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 27
- 230000008569 process Effects 0.000 title claims description 12
- 239000000203 mixture Substances 0.000 claims abstract description 95
- 238000004544 sputter deposition Methods 0.000 claims abstract description 46
- 230000008859 change Effects 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims description 70
- 238000004519 manufacturing process Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 37
- 150000004770 chalcogenides Chemical class 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 30
- 239000011229 interlayer Substances 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 150000001786 chalcogen compounds Chemical class 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 230000006870 function Effects 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- FTIMWVSQXCWTAW-UHFFFAOYSA-N ruthenium Chemical compound [Ru].[Ru] FTIMWVSQXCWTAW-UHFFFAOYSA-N 0.000 claims 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- WMOJAWPGEQWAMM-UHFFFAOYSA-N [Ir].[Ru].[Ru] Chemical compound [Ir].[Ru].[Ru] WMOJAWPGEQWAMM-UHFFFAOYSA-N 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 claims 1
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 24
- 229910000618 GeSbTe Inorganic materials 0.000 abstract description 21
- 230000032683 aging Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 140
- 239000000463 material Substances 0.000 description 15
- 229910052714 tellurium Inorganic materials 0.000 description 12
- 229910005900 GeTe Inorganic materials 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 229910018321 SbTe Inorganic materials 0.000 description 4
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 229910005872 GeSb Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2006/312594 WO2008001411A1 (fr) | 2006-06-23 | 2006-06-23 | Procédé de production de dispositif mémoire à semi-conducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200814382A true TW200814382A (en) | 2008-03-16 |
Family
ID=38845190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096119969A TW200814382A (en) | 2006-06-23 | 2007-06-04 | Process for producing semiconductor memory device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2008001411A1 (ja) |
| TW (1) | TW200814382A (ja) |
| WO (1) | WO2008001411A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4635236B2 (ja) * | 2008-10-30 | 2011-02-23 | 独立行政法人産業技術総合研究所 | 固体メモリの製造方法 |
| JP2012219330A (ja) * | 2011-04-08 | 2012-11-12 | Ulvac Japan Ltd | 相変化メモリの形成装置、及び相変化メモリの形成方法 |
| CN105070826B (zh) * | 2015-07-15 | 2018-06-26 | 同济大学 | 多级相变存储用低功耗相变薄膜材料及其制备方法和应用 |
| CN111463345B (zh) * | 2020-03-26 | 2022-09-23 | 中国科学院上海微系统与信息技术研究所 | 一种Ta-Ge-Sb-Te相变材料及其制备方法和相变存储器单元 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03238882A (ja) * | 1990-02-16 | 1991-10-24 | Hitachi Ltd | 情報の記憶用素子 |
| US5254382A (en) * | 1990-11-29 | 1993-10-19 | Fuji Xerox Co., Ltd. | Optical recording medium |
| JP5281746B2 (ja) * | 2004-05-14 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP4934276B2 (ja) * | 2004-11-15 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 半導体メモリおよびその製造方法 |
| JP2006156886A (ja) * | 2004-12-01 | 2006-06-15 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
-
2006
- 2006-06-23 JP JP2008522217A patent/JPWO2008001411A1/ja active Pending
- 2006-06-23 WO PCT/JP2006/312594 patent/WO2008001411A1/ja active Application Filing
-
2007
- 2007-06-04 TW TW096119969A patent/TW200814382A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008001411A1 (fr) | 2008-01-03 |
| JPWO2008001411A1 (ja) | 2009-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4968547B2 (ja) | 相変化メモリセル及び形成方法 | |
| CN101345251B (zh) | 位于半导体衬底之上的存储单元阵列及其制造方法 | |
| CN100440486C (zh) | 具有电极层处理的相变随机存取存储器的制造方法 | |
| US8158965B2 (en) | Heating center PCRAM structure and methods for making | |
| US8168538B2 (en) | Buried silicide structure and method for making | |
| US7755076B2 (en) | 4F2 self align side wall active phase change memory | |
| TWI385790B (zh) | 相變化記憶體之多晶矽栓塞雙極性電晶體 | |
| US8933536B2 (en) | Polysilicon pillar bipolar transistor with self-aligned memory element | |
| US7551473B2 (en) | Programmable resistive memory with diode structure | |
| US7879645B2 (en) | Fill-in etching free pore device | |
| KR100873878B1 (ko) | 상변화 메모리 유닛의 제조 방법 및 이를 이용한 상변화메모리 장치의 제조 방법 | |
| TWI491023B (zh) | 記憶體元件，製造其之方法，及記憶體裝置 | |
| US7510929B2 (en) | Method for making memory cell device | |
| US20070298535A1 (en) | Memory Cell With Memory Material Insulation and Manufacturing Method | |
| US20080258126A1 (en) | Memory Cell Sidewall Contacting Side Electrode | |
| JP2006352082A (ja) | 半導体記憶装置及びその製造方法 | |
| US7527985B2 (en) | Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas | |
| US20060071244A1 (en) | Switching or amplifier device, in particular transistor | |
| JP5142397B2 (ja) | 相変化物質を用いた電子素子及び相変化メモリ素子並びにその製造方法 | |
| JP5043044B2 (ja) | 半導体記憶装置の製造方法 | |
| TW200814382A (en) | Process for producing semiconductor memory device | |
| TW200832679A (en) | Multilevel-cell memory structures employing multi-memory layers with tungsten oxides and manufacturing method | |
| JP5061113B2 (ja) | 半導体記憶装置の製造方法 | |
| TW201027818A (en) | Integrated circuit device with single crystal silicon on silicide and manufacturing method | |
| JP2012064965A (ja) | 半導体装置及びその製造方法 |