TW200811431A - Method of inspecting a pattern defect, pattern defect inspecting apparatus, method of producing a photomask, and method of producing a substrate for a display device - Google Patents

Method of inspecting a pattern defect, pattern defect inspecting apparatus, method of producing a photomask, and method of producing a substrate for a display device Download PDF

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TW200811431A
TW200811431A TW096120947A TW96120947A TW200811431A TW 200811431 A TW200811431 A TW 200811431A TW 096120947 A TW096120947 A TW 096120947A TW 96120947 A TW96120947 A TW 96120947A TW 200811431 A TW200811431 A TW 200811431A
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Taiwan
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pattern
light
transparent substrate
observation
inspected
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TW096120947A
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Chinese (zh)
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TWI366668B (en
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Noboru Yamaguchi
Katsuhiko Nakanishi
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Hoya Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

An object of this invention is to successfully detect a defect in a repetitive pattern formed on a transparent substrate of an object to be inspected. This invention provides a pattern defect inspecting method of inspecting, in a photomask 50 including a transparent substrate 52 and a repetitive pattern 51 formed thereon and composed of unit patterns periodically arranged, a defect occurring in the repetitive pattern 51. In the method, an illuminating unit 12 emits light to the repetitive pattern 51 at a predetermined incident angle. In a preselected monitoring region 58 on the repetitive pattern 51, a monitoring unit 13 monitors diffracted light produced by the emitted light to inspect presence of a defect on the repetitive pattern 51. At least a part of the photomask 50 except the monitoring region 58 is shielded to thereby prevent stray light passing through the transparent substrate 52 from being emitted into the monitoring region 58.

Description

200811431 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種用以檢查被檢查體中之反覆圖 案之缺陷的圖案缺陷檢查方法、圖案缺陷檢查裝置、實施 該圖案缺陷檢查而製造光罩製品之光罩之製造方法、以及 使用该光罩製品來製造顯示裝置用基板之顯示裝置用基 板之製造方法。 【先前技術】 於作為被檢查體之裝置用基板、或用以製造該裝置用 基板之光罩製品（以下亦僅稱為光罩）中，係必須對形成 ^表面之圖案的缺陷進行檢查。在該圖案之缺陷中’係在 呈規則性排列的圖案中包含具有預料之外所產生之不同 規則性的錯誤（error)。此亦稱為不均勻缺陷，在製造夕 驟中會因任何原因而產生。[Technical Field] The present invention relates to a pattern defect inspection method for inspecting a defect of a reverse pattern in a test object, a pattern defect inspection device, and performing the pattern defect inspection to manufacture light A method of manufacturing a mask for a cover product, and a method of manufacturing a substrate for a display device using the mask product to manufacture a substrate for a display device. [Prior Art] In the substrate for a device to be inspected or the photomask (hereinafter also referred to as a photomask) for manufacturing the substrate for the device, it is necessary to inspect the defect in which the pattern of the surface is formed. In the pattern of defects, the patterns in the regularly arranged pattern contain errors with unexpectedly different regularities. This is also known as a non-uniform defect and can occur for any reason during the manufacturing eve.

尤其，當於顯示裝置用基板中存在上述缺陷時，會雇 生顯示不均勾，而有使顯示裝置之性能降低之虞。在i造 該顯示裝置用基板時所使用之光罩中，亦當在光罩之圖案 產生缺陷時，由於該缺陷轉印在顯示裝置用基板之圖荦， 因此有降低顯示裝置之性能之虞。 如上所述之顯示裝置用基板之圖帛或光κ㈣ 的缺陷-般係呈規則性排列微細之缺陷者，大部分於各 圖案之形狀檢查中並無法檢測出，當作為整個區域觀 日才會形成與其他部分不同的狀態。因此，該缺陷檢查In particular, when the above-mentioned defects are present in the substrate for a display device, the display unevenness is employed, and the performance of the display device is lowered. In the reticle used in the manufacture of the substrate for a display device, when a defect occurs in the pattern of the reticle, the defect is transferred to the substrate for the display device, so that the performance of the display device is lowered. . As described above, the defect of the substrate for the display device or the defect of the light κ (4) is generally irregularly arranged, and most of the defects are not detected in the shape inspection of each pattern, and it is only when the entire region is viewed. Form a different state from the other parts. Therefore, the defect check

2130-8797-PF 6 200811431 要係藉由目測之斜光檢查等外觀檢查來實施。 然而，該目測檢查會有因作業人員的不同而在檢查社 果產生不-致的問題，目而期待缺陷檢查裝置的自動化。 以將目測之斜光裝置予以自動化的裝置而言，例如由 +導體晶圓所製造之半導體裝置用基板之大型（㈣ Γ查装置即為其中之―。例如，在日本專利特開平 /29555號公報（專利文獻υ所揭示之農置係具有：對 :成在半導體晶圓表面之周期性構造（反覆圖案）照射所 ^望波長之光的光源；接受來自基板表面之繞射光的攝影 卜’以及用以藉由比較由該攝影機所拍攝到之晝像資料與 無缺陷之基準資料來檢測缺陷的檢測手段。該大型檢查掌 置係將晶圓整面收在單一視野而檢查焦點偏移 offset)、因在晶圓下面存在塵埃（粒”而使晶圓上 :位置改變所造成的失焦、因晶圓顯影，餘刻，剝離步驟 中之錯誤等所引起之半導體晶圓表面之周期性構 陷者。 穴 【發明内容】 但是，在專利文獻」中的被檢查體並非為透明體。如 弟9圖所示，於在透明基板m上形成有周期性排列好單 位圖案之反覆圖案1G2之光罩1GG中，藉由照明裝置Μ =照射至上述反覆圖案1G2,由觀察裝置92觀察由反覆 :請上之觀察區域103所產生的燒射光，#此檢查在 述反覆圖案H)2所產生缺陷時，會有如下所示之課題。 2130-8797-PF 7 200811431 亦即，於透明基板1 Q 1夕H、息 土攸iUi之周邊側的表面i〇u中，當 光由未形成有反覆圖案102與遮光膜104之間隙L入射至 透明基板101内時，該光右日本合六、乐_甘上 发尤有蚪會在透明基板101的背面 101Β予以反射而入射至颧容F a %王銳祭（he域1 〇3内。如上所述的光由 於透光量較大，因此當入射？兹目釔p 士 驾了主覜察區域10 3内時會形成漫 射光，而在觀察裝置92之攝像裝置（例如ccD(charge2130-8797-PF 6 200811431 It is implemented by visual inspection such as visual inspection. However, this visual inspection may cause problems in the inspection of the results due to the difference in the operator, and the automation of the defect inspection device is expected. In the device for automating the visually slanting device, for example, the substrate for a semiconductor device manufactured by a +conductor wafer is large (the (4) inspection device is one of them. For example, in Japanese Patent Laid-Open No. 29555 (The agricultural system disclosed in the patent document has: a light source that emits light of a desired wavelength on a periodic structure (repeated pattern) on a surface of a semiconductor wafer; and a photograph of a diffracted light from a surface of the substrate; A detecting means for detecting a defect by comparing the image data captured by the camera with the reference data without defects. The large inspection is performed by taking the entire surface of the wafer in a single field of view and checking the focus offset. Periodically trapping the surface of the semiconductor wafer due to the presence of dust (grain) under the wafer, such as out-of-focus on the wafer: positional change, wafer development, residual, error in the stripping step, etc. [Announcement] However, the object to be inspected in the patent document is not a transparent body. As shown in Fig. 9, the periodic arrangement is formed on the transparent substrate m. In the mask 1GG of the repeating pattern 1G2 of the bit pattern, the illumination device Μ = is irradiated onto the above-mentioned reverse pattern 1G2, and the observation device 92 observes the burned light generated by the observation area 103, which is repeated. When the defect generated by the pattern H)2 is reversed, there is a problem as follows. 2130-8797-PF 7 200811431 That is, in the surface i〇u on the peripheral side of the transparent substrate 1 Q 1 H, the soil 攸iUi When the light is incident into the transparent substrate 101 by the gap L in which the reverse pattern 102 and the light shielding film 104 are not formed, the light is right-handed, and the light is reflected on the back surface 101 of the transparent substrate 101. And incident to the content of F a % Wang Rui sacrifice (he domain 1 〇 3. As mentioned above, the light has a large amount of light transmission, so when the incident is in the main observation area 10 3 A diffused light is formed, and the camera device of the observation device 92 (for example, ccD (charge)

C〇UPled DeViCe，電荷輕合裝置）攝影機）形成影 i 05 (第 6圖⑻）@|頁現’而被辨認為繞射光混亂的情形。 、如上所示，根據來自設定在反覆圖案102上之觀察區 域103的繞射光，來檢查該反覆圖案1〇2之缺陷時，會有 上述度射光產生不良情形’且無法良好地檢測出在反覆圖 案102所產生的缺陷之虞。 尤其，在反覆圖案i 02的外側（光罩i 〇〇的外周）且 近接反覆圖案102的區域，係存在有具有與反覆圖案1〇2 不同之規則性的圖帛1G4’（例如對準標記（alignment mark)、製品識別標記等）。因此，當觀察區域ι〇3接近反 覆圖案102之外周時，不僅來自反覆圖案1〇2的反射光（或 者以光罩之透射光進行檢查時則為透射光），連來自具有 不同規則性之圖案1G4，（對準標記、製品識別標記等） 的反射光（或透射光）亦同時由觀察裝置92予以受光， 而容易獲得錯誤的缺陷檢查結果。此外，亦有來自入射至 觀察區域103内之照明裝置91的照明光係在透明基板1〇1 的为面（與光入射的主面為相反側之透明基板j 〇〗的主面） 反射，且與欲於觀察區域103内進行觀察的攝像畫像相重 2130-8797-PF 8 200811431 疊’而誤認為暗示此為存在缺陷之繞射光混亂的情形。 本發明係考量上述情形而研創者，目的在提供可良好 地檢測出形成在被檢查體之透明基板上之反覆圖案中之 缺陷的圖案缺陷檢查方法、圖案缺陷檢查裝置、實施該圖 案缺陷檢查方法之光罩製品之製造方法、以及使用該光罩 製品來製造顯示裝置用基板之顯示裝置用基板之製造方 法。 、C〇UPled DeViCe, the charge-collecting device) is formed into a shadow i05 (Fig. 6(8)) @|[页] and is considered to be a situation in which the diffracted light is chaotic. As described above, when the defect of the reverse pattern 1〇2 is inspected based on the diffracted light from the observation region 103 set on the reverse pattern 102, the above-described photoluminescence is inconvenient and cannot be satisfactorily detected. The flaws in the pattern 102 are defects. In particular, in the region on the outer side of the reverse pattern i 02 (outer periphery of the mask i )) and in the vicinity of the reverse pattern 102, there is a pattern 1G4' having different regularity from the reverse pattern 1〇2 (for example, an alignment mark) (alignment mark), product identification mark, etc.). Therefore, when the observation area ι 〇 3 is close to the outer circumference of the reverse pattern 102, not only the reflected light from the reverse pattern 1 〇 2 (or the transmitted light when examined by the transmitted light of the reticle), but also comes from a different regularity. The reflected light (or transmitted light) of the pattern 1G4, (alignment mark, product identification mark, etc.) is also received by the observation device 92 at the same time, and an erroneous defect inspection result is easily obtained. Further, the illumination light from the illumination device 91 incident on the observation region 103 is reflected on the surface of the transparent substrate 1〇1 (the main surface of the transparent substrate j 〇 opposite to the main surface on which the light is incident). Further, it is considered to be a case where the image of the image to be observed in the observation area 103 is 2130-8797-PF 8 200811431, and it is mistaken to suggest that this is a case where the diffraction light of the defect is disordered. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a pattern defect inspection method, a pattern defect inspection apparatus, and a pattern defect inspection method capable of satisfactorily detecting a defect in a reverse pattern formed on a transparent substrate of a test object. A method of producing a photomask product, and a method of producing a substrate for a display device using the photomask article to manufacture a substrate for a display device. ,

申清專利錢第1項之發明之圖案缺陷檢查方法係用 以檢查在透明基板上形成有周期性排列好單位圖案之反 覆圖案之被檢查體中.在上述反覆圖案所產生之缺陷的圖 案缺陷檢查方法’其係藉由照明手段，將光以既定之入射 角Μ照射在上述反覆圖案；於上述反覆圖案上之既定的 觀察：域中，藉由觀察手段觀察由照射光所產生的繞射 光，藉此檢查上述反覆圖案有無缺陷；將上述被檢查體之 上述觀察區域以外之至少一部分予以遮光。 、申請專利範圍第2項之發明之圖案缺陷檢查方法係用 乂 k查在透明基板上形成有周期性排列好單位圖案之反 覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的圖 案缺陷檢查方法’其係藉由照明手段，將光以既定之入射 角Μ照射在上述反覆圖案；於上述反覆圖案上之既定的 觀察區域中’藉由觀察手段觀察由照射光所產生的繞射 光’藉此檢查上述反覆圖案有無缺陷；且以限制對上述被 檢查體之上述觀察區域以外的部分進行照射的方式控制 照射光之照射區域。 2130-8797-PF 9 200811431 申睛專利範圍第3項之發明之圖案缺陷檢查方法係用 以檢查在透明基板上形成有周期性排列好單位圖案之反 覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的圖 案缺陷檢查方法，其係藉由照明手段，將光以既定之入射 角θί照射在上述反覆圖案；於上述反覆圖案上之既定的 觀察區域中’藉由觀察手段觀察由照射光所產生的繞射 光，藉此檢查上述反覆圖案有無缺陷；以使由上述透明基 板之上述觀察區域之背面所得之反射光不會入射至該觀 察區域的方式，當上述透明基板之厚度為τ，上述觀察區 域之最大寬度為W，上述透明基板之折射率為η時，以滿 足以下式（Α)的方式設定觀察區域之最大寬度w。 W$ 2 丁·__s i ηθίThe method for inspecting a pattern defect of the invention according to the first aspect of the invention is for inspecting a pattern defect in which a pattern of a periodic pattern of a unit pattern is formed on a transparent substrate. In the inspection method, the light is irradiated onto the reverse pattern at a predetermined incident angle by illumination means; in the predetermined observation: in the repeated pattern, the diffracted light generated by the illumination is observed by the observation means. Thereby, the presence or absence of defects in the reverse pattern is checked; and at least a portion of the object to be inspected other than the observation area is shielded from light. The pattern defect inspection method of the invention of claim 2 is for detecting a pattern defect of a defect generated in the above-mentioned reverse pattern in a test object in which a reverse pattern of a unit pattern is periodically formed on a transparent substrate. In the inspection method, the light is irradiated onto the reverse pattern at a predetermined incident angle by illumination means; in the predetermined observation area on the reverse pattern, 'the diffracted light generated by the illumination light is observed by the observation means' Thereby, the presence or absence of defects of the above-mentioned reverse pattern is checked, and the irradiation area of the irradiation light is controlled so as to restrict irradiation of a portion other than the observation region of the object to be inspected. 2130-8797-PF 9 200811431 The method for inspecting a pattern defect of the invention of claim 3 is for inspecting the above-mentioned reverse pattern in the object to be inspected in which the reverse pattern of the unit pattern periodically arranged on the transparent substrate is formed. A pattern defect inspection method for generating a defect by irradiating light to the above-mentioned reverse pattern at a predetermined incident angle θί by means of illumination; in the predetermined observation area on the reverse pattern, 'observing light by observation means The generated diffracted light is thereby inspected for detecting the presence or absence of defects in the reverse pattern; such that the thickness of the transparent substrate is τ when the reflected light obtained from the back surface of the observation region of the transparent substrate is not incident on the observation region. The maximum width of the observation region is W, and when the refractive index of the transparent substrate is η, the maximum width w of the observation region is set so as to satisfy the following formula (Α). W$ 2 Ding·__s i ηθί

、申請專利範圍第4項之發明之圖案缺陷檢查方法係用 以檢查在透明基板上形成有周期性排列好單位圖案之反 覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的圖 案缺陷㈣方法，其係藉由照明手段，將光以既^之入射 角Θ 1 ,，、、射在上述反覆圖案；於上述反覆圖案上之既定的 觀察區域中，藉由觀察手段觀察由照射光所產生的繞射 光，藉此檢查上述反覆圖案有無缺陷；以使由上述透明基 :之上述觀察區域之背面所得之反射光不會入射至該觀 不區域的方式，當上述透明基板之厚度為τ，上述觀察區 域之最大寬度為W，上诫痏0日A > 、 上这透明基板之折射率為η時，以滿 足、下式（Α)的方式设定觀察區域之最大寬度f且將上述The pattern defect inspection method of the invention of claim 4 is for inspecting a pattern defect of a defect generated in the above-mentioned reverse pattern in a test object in which a repeating pattern of a unit pattern periodically formed on a transparent substrate is formed (4) The method is characterized in that, by means of illumination, the light is incident on the repetitive pattern by an incident angle Θ 1 , and is reflected by the observation means in a predetermined observation area on the repetitive pattern. The generated diffracted light is thereby inspected for the presence or absence of a defect in the reverse pattern such that the reflected light obtained from the back surface of the observation region of the transparent substrate is not incident on the viewing region, and the thickness of the transparent substrate is τ The maximum width of the observation region is W, the upper 诫痏0 day A >, and the refractive index of the transparent substrate is η, the maximum width f of the observation region is set to satisfy the following formula (Α) and Above

2130-8797-PF 10 200811431 被檢查體之上述觀察區域以外之至少一部分予以遮光2130-8797-PF 10 200811431 At least a part of the above-mentioned observation area of the object to be inspected is shielded from light

申請專利範圍第5項之發明之圖案缺陷檢查方法係用 以檢查在透明基板上形成有周期性排列好單位目案之反 覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的圖 案缺陷檢查方法，其係藉由照料段，將光以既定之入射 角θί照射在上述反覆圖案；於上述反覆圖案上之既定的 觀㈣域中’藉由觀察手段觀察由照射光所產生的繞射 光’藉此檢查上述反覆圖案有無缺陷；以使由上述透明基 板之上述觀察區域之背面所得之反射光不會入射至該觀 察區域的方式’當上述透明基板之厚度為Τ，域觀察區 域之最大寬度為W，上述透明基板之折射率為η時，以滿 足以下式（Α)的方式設定觀察區域之最大寬度w，且以限制 對上述被檢查體之上述觀察區域以外的部分進行照射的 方式控制照射光之照射區域。 S i n (9iThe pattern defect inspection method of the invention of claim 5 is for inspecting a pattern defect inspection of a defect generated in the above-mentioned reverse pattern in a test object in which a reverse pattern of a unit pattern is periodically arranged on a transparent substrate. a method of irradiating light to the above-mentioned reverse pattern at a predetermined incident angle θί by means of a care section; observing the diffracted light generated by the illumination light by observation means in a predetermined view (4) of the above-mentioned reverse pattern Thereby, the defect pattern is inspected for defects such that the reflected light obtained from the back surface of the observation region of the transparent substrate is not incident on the observation region: when the thickness of the transparent substrate is Τ, the maximum width of the domain observation region When the refractive index of the transparent substrate is η, the maximum width w of the observation region is set so as to satisfy the following formula (Α), and the portion other than the observation region of the test object is restricted from being irradiated. Irradiation area of the illuminated light. S i n (9i

申請專利範圍第6項之發明之圖案缺陷檢查方法係用 以查在透明基板上形成有周期性排列好單位圖案之反 覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的圖 案缺陷檢查方法，其係藉由使用柯勒照明的照明手段，將 光以既定之入射角0i照射在上述反覆圖案；於上述反覆 圖案上之既定的觀察區域中，藉由觀察手段觀察由照射光 2130—8797-PF 11 200811431 所產生的繞射光，藉此檢查上述反覆圖案有無缺陷；且使 用上述柯勒照明’將光圈像形成在上述被檢查體的表面， 猎此以限制對上述被檢查體之上，述觀察區域以外的部分 進行照射的方式控制照射光之照射區域。 申請專利範圍第7項之發明之圖案缺陷檢查方法係用 以檢查在透明基板上形成有周期性排列好單位圖案之反 覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的圖 案缺陷檢查方法，其係藉由照明手段，將光以既定之入射 角照射在上述反覆圖案；於上述反覆圖案上之既定的 觀察區域中，藉由受光手段接受由照射光所產生的反射光 或透射光，而觀察該所接受到的光，藉此檢查上述反覆圖 案f無缺陷；當上述透明基板之厚度為了，上述觀察區域 之最大寬度為w，上述透明基板之折射率為η，且於上述 被檢查體之被照明區域中，該照射光之入射侧令之該觀察 區域外之照射寬度為D日夺，以滿1以下數式⑻的入射角 0 i照射光。 W+D； ~2The pattern defect inspection method of the invention of claim 6 is for examining a pattern defect inspection method for forming a defect generated in the above-mentioned reverse pattern in a test object in which a reverse pattern of a unit pattern is periodically arranged on a transparent substrate By using the illumination means of Kohler illumination, the light is irradiated on the reverse pattern at a predetermined incident angle 0i; in the predetermined observation area on the reverse pattern, the observation light is observed by the observation means 2130-8797 - PF 11 200811431 generated diffracted light, thereby checking whether or not the above-mentioned reverse pattern is defective; and using the above-mentioned Kohler illumination to form an aperture image on the surface of the object to be inspected, thereby limiting the upper surface of the object to be inspected, The irradiation region of the irradiation light is controlled such that the portion other than the observation region is irradiated. The pattern defect inspection method of the invention of claim 7 is a method for inspecting a pattern defect for inspecting a defect generated in the above-mentioned reverse pattern in a test object in which a repeating pattern of a unit pattern is periodically arranged on a transparent substrate And irradiating the light to the reverse pattern at a predetermined incident angle by means of illumination; and receiving light or transmitted light generated by the illumination light by the light receiving means in a predetermined observation area on the reverse pattern; Observing the received light, thereby checking that the reverse pattern f has no defect; when the thickness of the transparent substrate is such that the maximum width of the observation region is w, the refractive index of the transparent substrate is η, and is checked as described above In the illuminated area of the body, the incident side of the illumination light has an illumination width outside the observation area of D, and the light is irradiated with an incident angle 0 i of the equation (8) of less than one. W+D; ~2

W+DV •(B) 2 / + T2 申請專利範圍第8項之發明之圖案缺陷檢查裝置係用 以檢查在透明基板上形成有周期性排列好單位圖荦之反 =圖案之被檢查體中在上述反覆圖案所產生之缺陷 =缺陷檢查M，其係具有：載置台，相載置上述被檢 一體，照明手段’以既定之入射“ i將光照射在載置於 2130-8797-PF 12 200811431 上述載置台之被檢查體上之上述反覆圖 由該舨射先所產生的反射光或透射光；解析手#，用 析由該受光手段所接受到的光；以及遮光手段，以使由上 述透明基板之上述觀察區域㈣面所產生的反射光不會W+DV • (B) 2 / + T2 The pattern defect inspection device of the invention of claim 8 is for inspecting the object to be inspected on the transparent substrate and having the reverse pattern of the unit pattern periodically arranged. The defect-defect inspection M generated by the above-mentioned reverse pattern has a mounting table on which the above-described integrated body is placed, and the illumination means 'illuminates the light at a predetermined incidence of i at 2130-8797-PF 12 200811431 The above-mentioned repeated view on the object to be inspected is reflected or transmitted light generated by the first shot; the analysis hand# is used to analyze the light received by the light receiving means; and the light shielding means is used to The reflected light generated by the (4) plane of the above-mentioned transparent substrate does not

入射至該硯察區域的方式，#上述透明基板之厚声為T 上述觀察區域之最大寬度為w，上述透明基板之：射率為 η時’以滿足以下式⑴的方式將上述被檢查體之上述觀率 區域以外之至少一部分予以遮光。 W^- 2 T s i n i9i •(A) 申請專利範圍第9項之發明之圖案缺陷檢查裝置係用 以檢查在透明基板上形成有周期性排列好單位圖案之反 覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的圖 案缺陷檢查裝置，其係具有：載置台，用以載置上述被檢 查體，照明手段’以既定之人射肖將光照射在載置於 上述載置台之被檢查體上之上述反覆圖案；觀察手段，於 上述反覆圖案上之既定的觀察區域中’藉由受光手段接受 由該照射光所產生的反射光或透射光；以及解析手段，用 以解析由該受光手段所接受到的光，上述照明手段係以使 由上述透明基板之上述觀察區域的背面所產生的反射光 不會入射至該觀察區域的方式，當上述透明基板之厚度為 Τ，上述觀察區域之最大寬度為w，上述透明基板之折射率 為η時’以滿足以下式⑴的方式限制照射光之照射區域。 2130-8797-PF 13 200811431In the case where the light is incident on the observation region, #the thickness of the transparent substrate is T, and the maximum width of the observation region is w, and when the incident ratio is η, the object to be inspected is satisfied to satisfy the following formula (1). At least a part of the above-mentioned viewing rate region is shielded from light. W^- 2 T sin i9i • (A) The pattern defect inspection apparatus of the invention of claim 9 is for inspecting an object to be inspected on which a repeating pattern of periodically arranged unit patterns is formed on a transparent substrate A pattern defect inspection device for reversing a pattern generated by a pattern, comprising: a mounting table for placing the object to be inspected, and an illumination means for irradiating light to a predetermined position on the mounting table by a predetermined person The above-mentioned reverse pattern on the body; the observation means receives the reflected light or the transmitted light generated by the illumination light by the light receiving means in a predetermined observation area on the reverse pattern; and analyzing means for analyzing the received light The light received by the means is such that the reflected light generated by the back surface of the observation region of the transparent substrate does not enter the observation region, and the thickness of the transparent substrate is Τ, the observation region When the maximum width is w and the refractive index of the transparent substrate is η, the irradiation region of the irradiation light is limited so as to satisfy the following formula (1). 2130-8797-PF 13 200811431

2T η2T η

i n0in-i〜ί ηθί) (A)i n0in-i~ί ηθί) (A)

申請專利範圍第10項之發明之圖案缺陷檢查裝置係 用以檢查在透明基板上形成有周期性排列好單位圖案之 反覆圖案之被檢查體中在上述反覆圖案所產生之缺陷的 圖案缺陷檢查裝置’其係、具有：載置台，用以載置上述被 檢查體；照明手段，以既定之入射角㈠將光照射在載置 於上述載置台之被檢查體上之上述反覆圖案；觀察手段， 於上述反覆圖案上之既定的觀察區域中，藉由受光手段接 文由該照射光所產生的反射光或透射光；以及解析手段， 用以解析由該受光手段所接受到的光，上述照明手段係當 上述透明基板之厚度為τ，上述觀察區域之最大寬度為w， 。述透月基板之折射率$ n , 1於上述被I查體之被照明 品或中"亥恥射光之入射側中之該觀察區域外之照射寬度 為D時，以滿足以下數式（3)的入射角^土照射光。The pattern defect inspection apparatus of the invention of claim 10 is a pattern defect inspection apparatus for inspecting a defect generated in the reverse pattern in a test object in which a repeating pattern of a unit pattern is periodically arranged on a transparent substrate. a system comprising: a mounting table for placing the object to be inspected; and an illumination means for irradiating light onto the object to be inspected on the mounting table at a predetermined incident angle (1); In the predetermined observation area on the reverse pattern, the reflected light or the transmitted light generated by the illumination light is received by the light receiving means; and the analyzing means is configured to analyze the light received by the light receiving means, the illumination The method is such that when the thickness of the transparent substrate is τ, the maximum width of the observation region is w. When the refractive index of the through-substrate substrate is n n , the illumination width outside the observation area in the incident side of the illumination object or the incident side of the illuminating light is D, the following equation is satisfied ( 3) The incident angle ^ soil illuminates the light.

W+DY + T2 (B) 申請專利範圍第n項之發明之圖案缺陷檢查裝置 係於申請專利範圍第1G項之圖案缺陷檢查裝置中，上 透明基板的厚度T在5龍以上、2 5 m m以下之範圍時，上 觀察區域之最大嘗声冗尤、 、又在1_以上、50mm以下的範圍0 申請專利範圍第 被檢查體為光罩，且 12項之發明之光罩之製造方法中， 包含貫施如申請專利範圍第1項至第W+DY + T2 (B) The pattern defect inspection device of the invention of claim n is in the pattern defect inspection device of the patent application scope 1G, the thickness T of the upper transparent substrate is 5 or more, 2 5 mm In the following range, the maximum sound of the upper observation area is redundant, and it is in the range of 1_ or more and 50mm or less. 0 The patent application scope is the mask, and the manufacturing method of the mask of the 12th invention is , including the application of the patent scope range 1 to

2130-8797-PF 14 200811431 7項中任一項之圖案缺陷檢查方法之檢查步驟。 申睛專利範圍第13項之發明之顯示裝置用基板之製 ^方法之特徵為：使用如申請專利範圍第1 2項之光罩之 製造方法所得之光罩而形成畫素圖案，以製造顯示裝置用 基板。 根據申請專利範圍第1項之發明，當在被檢查體之透 明基板上之反覆圖案設定觀察區域，且於該觀察區域中， _藉由觀察由照射光所產生的繞射光，以檢查反覆圖案之缺 陷時’由於將透明基板之上述觀察區域以外之至少一部分 予以遮光，因此可防止通過透明基板内之漫射光入射至觀 察區域。結果，可解決因漫射光所產生之缺陷檢查的不良 情形’而可良好地檢測出在反覆圖案所產生的缺陷。 根據申請專利範圍第2項或第6項之發明，當在被檢 查體之透明基板上之反覆圖案設定觀察區域，且於該觀察 區域中’藉由觀察由照射光所產生的繞射光，以檢查反覆 _ 圖案之缺陷時，由於以限制對被檢查體之上述觀察區域以 外的部分進行照射的方式控制照射光之照射區域，因此此 時亦可防止通過透明基板内之漫射光入射至觀察區域。結 果，可解決因漫射光所產生之缺陷檢查的不良情形，而可 良好地檢測出在反覆圖案所產生的缺陷。 根據申睛專利範圍第3項至第5項、第8項、第9項 之發明，將觀察區域的最大寬度w以滿足式（〇的方式予 以設定，而且以使因透明基板之觀察區域之背面所產生的 反射光不會入射至該觀察區域的方式予以設定。因此，即 2130-8797-PF 15 200811431 使因照射至觀察區域的照射光，漫射光亦不會入射至該觀 察區域，而可良好地檢測出在反覆圖案所產生的缺陷。 根據申請專利範圍第7項、第1 〇項及第u項之發明， 以滿足式（B)的方式設定入射角θί，且構成為因透明基板 之觀察區域之背面所產生的反射光不會入射至該觀察區 域。因此可良好地檢測出在反覆圖案所產生的缺陷。 根據申請專利範圍第12項之發明，由於藉由包含實 •施如申請專利範圍第1項至第7項中任一項之圖案缺陷檢 查方法之檢查步驟的製造步驟來製造光罩，因此可良好地 檢測出該光罩中之反覆圖案的缺陷。 根據申請專利範圍第丨3項之發明，由於使用如申請 專利範圍第12項之光罩之製造方法所得之光罩而形成畫 素圖案，以製造顯示裝置用基板，因此可提升該顯示裝置 用基板的品質。 藝 【實施方式】 以下根據圖示說明用以實施本發明之最佳形態。 〔A〕第1實施形態（第1圖至第6圖） —第1圖係顯示用以實施本發明之圖案缺陷檢查方法中 之第1實施形態之圖案缺陷檢查裝置之概略侧面圖。第2 圖係顯示於第1圖之圖案缺陷檢查裝置中，入射光與繞射 光之關係的概略側面圖。 4等第1圖及第2圖所示之圖案缺陷檢查裝置i 〇係 用以檢查形成在作為被檢查體之光罩5〇表面的反覆圖案2130-8797-PF 14 200811431 The inspection step of the pattern defect inspection method according to any one of the items. The method for manufacturing a substrate for a display device according to the invention of claim 13 is characterized in that a photoreceptor obtained by a method for manufacturing a photomask according to claim 12 of the patent application is used to form a pixel pattern to produce a display. Substrate for the device. According to the invention of claim 1, the observation area is set in a reverse pattern on the transparent substrate of the object to be inspected, and in the observation area, the diffracted light generated by the illumination light is observed to check the reverse pattern. In the case of the defect, at least a part of the transparent substrate is shielded from light, so that the diffused light passing through the transparent substrate can be prevented from entering the observation region. As a result, it is possible to solve the defect caused by the defect inspection by the diffused light, and the defect generated in the reverse pattern can be satisfactorily detected. According to the invention of claim 2 or 6, the observation pattern is set in a reverse pattern on the transparent substrate of the object to be inspected, and in the observation region, 'by observing the diffracted light generated by the illumination light, When the defect of the pattern _ pattern is inspected, since the irradiation region of the irradiation light is controlled so as to restrict the irradiation of the portion other than the observation region of the object to be inspected, the diffused light passing through the transparent substrate can be prevented from being incident on the observation region. . As a result, it is possible to solve the defect of the defect inspection by the diffused light, and the defects generated in the reverse pattern can be well detected. According to the inventions of the third to fifth, eighth, and ninth aspects of the scope of the patent application, the maximum width w of the observation area is set to satisfy the formula, and the observation area of the transparent substrate is used. The reflected light generated on the back surface is set so as not to enter the observation area. Therefore, 2130-8797-PF 15 200811431, the diffused light is not incident on the observation area due to the illumination light irradiated to the observation area. The defects generated in the reverse pattern can be well detected. According to the inventions of the seventh, first, and fifth inventions of the patent application, the incident angle θί is set in a manner satisfying the formula (B), and is configured to be transparent. The reflected light generated on the back surface of the observation region of the substrate does not enter the observation region. Therefore, defects generated in the reverse pattern can be well detected. According to the invention of claim 12, The manufacturing process of the inspection step of the pattern defect inspection method according to any one of the first to seventh aspects of the patent application is to manufacture the photomask, so that the reverse image in the mask can be well detected. According to the invention of claim 3, the pixel pattern is formed by using the photomask obtained by the manufacturing method of the photomask of claim 12 to manufacture a substrate for a display device, thereby improving The quality of the substrate for the display device. [Embodiment] Hereinafter, the best mode for carrying out the invention will be described with reference to the drawings. [A] First embodiment (Fig. 1 to Fig. 6) - Fig. 1 shows A schematic side view of a pattern defect inspection apparatus according to a first embodiment of the method for inspecting a pattern defect of the present invention. Fig. 2 is a view showing the relationship between incident light and diffracted light in the pattern defect inspection apparatus of Fig. 1. A schematic side view. The pattern defect inspection device i shown in Figs. 1 and 2 is used to check the reverse pattern formed on the surface of the mask 5 as the object to be inspected.

2130-8797-PF 16 200811431 m 5i所產生的缺陷，係具有：作為載置被檢查體之载置台的 載台11;作為照明手段的照明裝置12;作為觀察手段的 觀察裝置13 ;作為設置在該觀察裝置13之受光手段的受 光光學系14;以及作為遮光手段的光圈l5(aperturef 所構成。其中，該光圈15係視需要而設。 在此，光罩50係於製造例如液晶顯示裝置（尤其平 面顯示器（Flat Panel Display : FPD))、電漿顯示裝置、 _ EL (Electro Luminescence，電激發光）顯示裝置、ίΕ]) (Light Emitting Diode，發光二極體）顯示裝置、dmd (Digital Micr〇fflirror Device，數位微鏡裝置）顯示裝 置等之顯示裝置用基板時所使用的曝光用遮罩。 接著，說明作為被檢查體之光罩5〇。該光罩5〇 一般 係在合成石英玻璃基板等透明基板上設置鉻膜等遮光 膜，以使該遮光膜形成所希望之圖案的方式予以局部去除 而形成遮光膜圖案者。於本實施形態中所檢查的光罩5〇 鲁係將規則排列單位圖案53所構成的反覆圖案形成在透 明基板52之表面52A的主要部分。此外，在透明基板52 之表面52A的周邊部分，係在為反覆圖案51之外側的入 射光侧以既定的間隙L設置遮光膜55。其中，除了遮光膜 55以外，有犄亦在反覆圖案51的外側形成有上述反覆圖 < 案51以外的圖案55’ （具有與反覆圖案51不同之規則性 的Θ案）例如’對準標記（)或製品識 別標記等包含在其中。 一般而言，以該類光罩50之製造方法而言，首先，2130-8797-PF 16 200811431 m 5i has a stage 11 as a mounting table on which the object to be inspected is placed, an illumination device 12 as an illumination means, and an observation device 13 as an observation means; The light receiving optical system 14 of the light receiving means of the observation device 13 and the aperture 15 (aperturef) as a light shielding means are provided. The aperture 15 is provided as needed. Here, the photomask 50 is used to manufacture, for example, a liquid crystal display device ( In particular, Flat Panel Display (FPD), plasma display device, _EL (Electro Luminescence) display device, Ε () (Light Emitting Diode) display device, dmd (Digital Micr) 〇fflirror Device A mask for exposure used when a substrate for a display device such as a display device is displayed. Next, a mask 5 as a test object will be described. In the mask 5, a light-shielding film such as a chromium film is provided on a transparent substrate such as a synthetic quartz glass substrate, and the light-shielding film is partially removed to form a light-shielding film pattern. In the mask 5 inspected in the present embodiment, the reverse pattern formed by the regular arrangement unit pattern 53 is formed on the main portion of the surface 52A of the transparent substrate 52. Further, in the peripheral portion of the surface 52A of the transparent substrate 52, the light shielding film 55 is provided at a predetermined gap L on the side of the incident light on the outer side of the reverse pattern 51. In addition to the light-shielding film 55, a pattern 55' other than the above-mentioned pattern 51 (having a regular pattern different from the reverse pattern 51) such as an 'alignment mark' is formed on the outer side of the reverse pattern 51. () or an article identification mark or the like is included therein. In general, in the manufacturing method of the reticle 50, first,

2130-8797-PF 17 200811431 4透明基板上形成遮光膜’且在該遮光上形成阻劑膜。接 著，對該阻劑膜照射描繪機中之雷射光束.，而將既定的圖 案進行曝光。接著，選擇性去除描繪部或非描緣部而形成 阻劑圖案。之後，以阻劑圖案為遮罩而將遮光膜進行姓 刻，在該遮光膜形成反覆圖案（遮光膜圖案）51，最後， 去除殘留阻劑而製造光罩50。 在上述之製造步驟中，當藉由掃描雷射光束，直接對 阻劑膜施行描綠時，因取決於掃描精度或光束直徑或掃描 寬度所產生的接合點等’有時會按每—描料位而周期性 產生因描繪不良所造成的誤差，此即成為反覆圖案51中 之前述缺陷的發生原因之一。有時會因其他各種原因而產 生具有規則性的圖案缺陷。 該缺陷之一例顯示於第4圖。在該第4圖中，係以 π件付號54表示缺陷區域。第4圖係顯示因在由光束 所產生的描繪接合點產生位置偏移，而使反覆圖案Η中 • 之單位圖案53的間隔局部不同所造成的缺陷。第4圖（B) 係顯示同樣地因在由光束所產生的描繪接合點產生位置 偏移，而使反覆圖案51中之單位圖案53的位置相對於其 他單位圖案53產生偏移的缺陷。將該等第4圖（A)及（β) 所示之缺陷稱為座標位置變動系之缺陷。此外，第4圖 及（D)係因描繪機之光束強度不一致等，而使反覆圖案Η 之單位圖案_ 53-局部變細-或變粗的缺陷二將_該等缺陷稱為 尺寸變動系之缺陷。其他在反覆圖案51之單位圖案53中 之既疋部分產生相同的形狀缺陷之.情形等，亦包含在成為 2130-8797-PF 18 200811431 本餐明之對象的缺陷中。 第1圖及第2圖所示之圖案缺陷檢查裝置1〇中之前 述載〇 11係具備用以支持光罩5 〇之支持面的台。該載台 11係藉由形成為可在χ方向及γ方向移動的χ_γ載台，可 將光罩50的觀察區域58 (後述）設定在既定位置。 刚述照明裝置12係使用高亮度（照度為3〇〇〇〇〇Lx以 上）且平行性高（平行度在2。以内）的光源。以可滿足 如上所述之條件的光源而言，係以超高壓水銀燈、氙燈、 金屬鹵素燈為佳。 該明裝置12配置在載台的上方。該照明裝置 係朝向在載台11之支持面所支持之光罩5〇表面之已規則 排列好單位圖案53的反覆圖案51而由斜上方以所希望的 入射角0 i照射光。藉由照射該照射光，而由反覆圖案51 產生繞射光。 前述觀察裝置13可使用例如具備物鏡的CCD攝影機 _ 作為攝像裝置，係配置在與載台11之支持面呈垂直方向 相對向的位置、或者配置在以既定角度與支持面相對向的 位置。觀察裝置13係於設定在光罩5〇之反覆圖案51上 的觀察區域58中，接收以受光光學系14受光且以光罩5〇 予以反射之光的繞射光，而作為晝像資訊而取入於CCD攝 影機。當具備受光光學系14的觀察裝置j 3配置在與載台 " 1L之-支持面-呈表直在向相對向…的-位-置時乂係_^降^低由於斜· 向配置而使文光光學系14之物鏡與光罩5 〇的距離不均 一，在面内產生遠近感，而使原本均一尺寸的反覆圖案像 2130-8797-PF 19 200811431 變得不均一，或者在面内發生失焦的問題。 上述觀察裝置13係接收在光罩5 0予以反射之光的鐃 射光中絕對值大於〇次之次數的繞射光。在此，在照射至 具備反覆圖案51之光罩50的照射光（入射光）、與來自 反覆圖案51之繞射光之間，如第2圖及第3圖所示，當 反覆圖案51之間距為d、入射角為0i、次數為^之！！# 繞射光的繞射角為0 n、入射光的波長為又時，即成立以 下之關係式（C)。 d ( s i η 0 η 土 s i η 0 i) λ ...(C) 〇次繞射光（直接光）由於微細的缺陷資訊相對上極 少，而且如絕對值大於0次之次數的繞射光般微細的缺陷 資訊相對上包含較多，因此為了獲得微細缺陷資訊，如前 所述，觀察裝置13必須接收絕對值大於〇次繞射光之次 數的繞射光（η次繞射光）。此外，繞射次數η亦可與反覆 圖案51的間距d相關而予以決定。因此，由式，對於 反覆圖案51之既定間距d，觀察裝置13接收既定的^^次 繞射光，因此可適當改變繞射光的方向（11次植射角 θιΟ或入射光的波長λ、入射角"卜另外如後；述， 可藉由式（Β)來決定入射角0i。 此外’由於觀察裝^ 13 CCD攝影機等攝影機作 為攝像裝置，而可使由該CCD攝影機所取入的晝像顯示在 顯I裝-置丄^且—可―藉―由—解.析裝 域 打⑽）攝影機。此外，亦可在該觀察裝置13裝設 為晝像貧料。該CCD攝影機係對2次元畫像進行攝影的 2130-8797-PF 20 200811431 透鏡。 解析的晝像資料係傳送… 次粗'斤衣置係精由在來自觀察裝置13之晝像 身设置臨限值等，使光罩5G中之反覆圖案51的缺 陷顯化而進行檢查。 前述光圈15係於光罩5G中將觀察區域⑽以外之至 少一部分予以遮光者。尤其觀察區域58在反覆圖案51的 :邊區域，而且由照明裝置12所照射之照射光入射至反 覆圖案51及遮光膜夕网虹、τ 士 t尤膜b5之間隙L時，上述光圈15係覆蓋 該間隙L的部分’而將入射至該間隙L之部分的光予以遮 光。此時’、光圈15係設置在極為接近光罩50之反覆圖案 51及遮光膜55之表面的位置’例如距離反覆圖案5i及遮 光膜55表面約imm以内左右的位置。 田未存在光圈15時，或者即使存在光圈j 5，被檢查 體上之被照明區域為較大時，由對應上述間隙L之表面 A入射至透明基板52内而在該透明基板52之背面52B ^以反射的光係如先前技術中之記載所示，當入射至觀察 區域58内時，有時會形成漫射光（stray light)。該漫 射光係於觀察裝置13中在攝像裝置形成影1〇5而顯現（第 6圖（B) )，而被辨認為繞射光混亂的情形，且在根據繞射 光所進行的反覆圖案51之缺陷檢查產生不良情形。相對 、於—此丄新—述―使^—存—在丄藉基使』圖—案』U 遮光膜55之間隙L之部分入射至透明基板52内的光變本 不存在’因此在觀察裝置13中的攝像裝置並不會產生| 2130-8797-PF 21 200811431 105而形成均—（第6圖⑴），而可避免在反覆圖案^ 的缺陷檢查產生不良情形。2130-8797-PF 17 200811431 4 A light-shielding film is formed on the transparent substrate and a resist film is formed on the light-shielding. Next, the resist film is irradiated with a laser beam in the drawing machine, and the predetermined pattern is exposed. Next, the drawing portion or the non-strip portion is selectively removed to form a resist pattern. Thereafter, the light-shielding film is named with the resist pattern as a mask, a reverse pattern (light-shielding film pattern) 51 is formed on the light-shielding film, and finally, the residual resist is removed to produce the mask 50. In the above manufacturing step, when the resist film is directly painted green by scanning the laser beam, the joints and the like which are generated depending on the scanning precision or the beam diameter or the scanning width may sometimes be described as The error caused by the poor drawing is periodically generated at the material level, which is one of the causes of the aforementioned defects in the reverse pattern 51. Regular pattern defects are sometimes produced for a variety of other reasons. An example of this defect is shown in Fig. 4. In the fourth drawing, the defective area is indicated by the π-piece symbol 54. Fig. 4 is a view showing a defect caused by a partial difference in the interval of the unit pattern 53 in the reverse pattern 因 due to a positional shift in the drawing joint caused by the light beam. Fig. 4(B) shows a defect in which the position of the unit pattern 53 in the reverse pattern 51 is shifted with respect to the other unit pattern 53 due to the positional shift in the drawing joint by the light beam. The defects shown in Figs. 4(A) and (β) are referred to as defects in the coordinate position variation system. In addition, in FIGS. 4 and (D), the unit pattern _ 53 of the reverse pattern 局部 is locally thinned or thickened due to the inconsistency of the beam intensity of the drawing machine, etc. Defects. Other cases in which the defective portion of the unit pattern 53 of the reverse pattern 51 produces the same shape defect are also included in the defect which becomes the object of the meal of 2130-8797-PF 18 200811431. The pattern defect inspection apparatus 1 shown in Figs. 1 and 2 has a stage on which a support surface for supporting the mask 5 is provided. The stage 11 is formed by a χ_γ stage which is movable in the χ direction and the γ direction, and the observation area 58 (described later) of the reticle 50 can be set at a predetermined position. The illumination device 12 is a light source that uses high luminance (illuminance of 3 〇〇〇〇〇 Lx or more) and high parallelism (parallelism of 2 or less). In the case of a light source which satisfies the conditions as described above, an ultrahigh pressure mercury lamp, a xenon lamp or a metal halide lamp is preferred. The device 12 is disposed above the stage. The illuminating device illuminates the light at a desired incident angle 0 i obliquely upward toward the reverse pattern 51 in which the unit pattern 53 is regularly arranged on the surface of the reticle 5 支持 supported by the support surface of the stage 11. The diffracted light is generated by the reverse pattern 51 by irradiating the irradiation light. As the observation device 13, for example, a CCD camera having an objective lens can be used as an imaging device, and is disposed at a position facing the support surface of the stage 11 in a direction perpendicular to the support surface or at a position facing the support surface at a predetermined angle. The observation device 13 is disposed in the observation region 58 set on the reverse pattern 51 of the mask 5, and receives the diffracted light that is received by the light receiving optical system 14 and reflected by the mask 5, and is taken as the image information. Enter the CCD camera. When the observation device j 3 including the light-receiving optical system 14 is disposed on the support surface of the stage " 1L - the position is relatively straight toward the - position - the lower limit is due to the oblique direction Moreover, the distance between the objective lens of the Wenguang optical system 14 and the mask 5 不 is not uniform, and the proximity feeling is generated in the plane, and the repetitive pattern image of the original uniform size becomes 2130-8797-PF 19 200811431 becomes uneven or in the surface. The problem of out of focus occurs inside. The observation device 13 receives the diffracted light whose absolute value is greater than the number of times of the illuminating light of the light reflected by the mask 50. Here, between the irradiation light (incident light) irradiated to the mask 50 having the reverse pattern 51 and the diffracted light from the reverse pattern 51, as shown in FIGS. 2 and 3, when the reverse pattern 51 is spaced apart For d, the angle of incidence is 0i, the number is ^! ! # The diffraction angle of the diffracted light is 0 n, and the wavelength of the incident light is again, that is, the relationship (C) is established. d ( si η 0 η 土 si η 0 i) λ (C) The secondary diffracted light (direct light) is relatively small due to the fine defect information, and is as fine as the diffracted light whose absolute value is greater than 0 times. Since the defect information is relatively large, in order to obtain the fine defect information, as described above, the observation device 13 must receive the diffracted light (n-th order diffracted light) whose absolute value is larger than the number of times of the diffracted light. Further, the number of diffractions η can also be determined in relation to the pitch d of the reverse pattern 51. Therefore, by the equation, for the predetermined pitch d of the reverse pattern 51, the observation device 13 receives the predetermined diffracted light, so that the direction of the diffracted light can be appropriately changed (11 implantation angles θιΟ or the wavelength λ of the incident light, the incident angle) "Bu is as follows; the angle of incidence can be determined by the formula (Β). In addition, the image captured by the CCD camera can be obtained by using a camera such as a CCD camera as an imaging device. Displayed in the display I installed - set 丄 ^ and - can be "borrowed - by - solution. Analysis of the field (10)) camera. Further, it is also possible to install the image in the observation device 13 as an image. The CCD camera is a 2130-8797-PF 20 200811431 lens that captures a two-dimensional portrait. The image data of the analysis is transmitted. The sub-thickness is checked by setting a threshold value or the like on the image body from the observation device 13 to cause the defect of the reverse pattern 51 in the mask 5G to be manifested. The aperture 15 is provided in the mask 5G to shield at least a part of the observation area (10) from light. In particular, when the observation region 58 is in the side region of the reverse pattern 51, and the illumination light irradiated by the illumination device 12 is incident on the reverse pattern 51 and the gap L between the light-shielding film XI NET and the τ 士 尤 film b5, the aperture 15 is The portion covering the gap L' is shielded from light incident on the portion of the gap L. At this time, the aperture 15 is provided at a position very close to the surface of the reverse pattern 51 and the light-shielding film 55 of the mask 50, for example, at a position approximately equal to or less than about imm from the surface of the reverse pattern 5i and the light-shielding film 55. When the aperture 15 is absent, or even if the aperture j 5 is present, the illuminated area on the object to be inspected is large, and the surface A corresponding to the gap L is incident on the transparent substrate 52 on the back surface 52B of the transparent substrate 52. ^The reflected light system is as described in the prior art, and when incident into the observation region 58, a stray light is sometimes formed. This diffused light is formed in the observation device 13 to form a shadow 1〇5 in the imaging device (Fig. 6(B)), and is recognized as a case where the diffracted light is disordered, and in the reverse pattern 51 according to the diffracted light. Defect inspection creates a bad situation. The light change that is incident on the transparent substrate 52 is not present in the portion of the gap L of the U light-shielding film 55, so that it is observed. The image pickup device in the device 13 does not generate | 2130-8797-PF 21 200811431 105 to form a uniform - (Fig. 6 (1)), and it is possible to avoid a defect in the defect inspection of the reverse pattern.

此外，入射至上述觀察區域58的照射光在與透明基 板52中之觀察區域58相對應的背面52β反射，以使該反 射光不會入射至上述觀察區$ 58的方式，該觀察區域58 的最大寬度W係以滿足下述式（A)的方式予以設定。在此， 上述式（A)中的T為透明基板52的厚度，n為透明基板52 的折射率，Θ i 4入射至透明基板52之照射光的入射角。Further, the illumination light incident on the observation area 58 is reflected on the back surface 52β corresponding to the observation area 58 in the transparent substrate 52 so that the reflected light is not incident on the observation area $58, and the observation area 58 is The maximum width W is set so as to satisfy the following formula (A). Here, T in the above formula (A) is the thickness of the transparent substrate 52, n is the refractive index of the transparent substrate 52, and 入射 i 4 is incident on the transparent substrate 52 at an incident angle.

ηθιλ (A) 因此’以滿足該式（A)的方式設定觀察區域58之最 大寬度W ’藉此即使藉由入射至觀察區域58的照射光，亦 可避免i觀察區域58產生漫射光。η θ λ λ (A) Therefore, the maximum width W ′ of the observation region 58 is set in such a manner as to satisfy the expression (A), whereby the i observation region 58 can be prevented from generating diffused light even by the irradiation light incident on the observation region 58.

上述式（A)係如下所示而求得。於第5圖中，入射至 透明基板52之表面52A中的點A0的光以折射角Θ r予以 折射而進至透明基板52内，且在該透明基板52之背面52B 中的點A1予以反射。關於用以使該反射光不會入射至觀 察區域58之最大寬度w内的條件，當將點AO、A1間的距 離設為r時，即得 WS 2.r*cos(90o — 0r) W^2*r*sin6r ......(1〉 2130-8797-PF 22 200811431 T=r · s in (90° —0r) T=r-(sin9〇° · c 〇 s Θ r-c o s 9 0° -sin6r) Tf=r · cos0r (2) /. r =T/ c o s Θ r 將光入射至折射率n之透明基板52時之入射角0 及折射角Θ Γ的關係式為： n=sin0i/sin0r ··. s i η 0 r = (1 / η) · s i n 0 i ΛΘ r = s i n-1 {(1/n)'· s i n Θ i} Λ〇 o s Θ r = c o s [si n~l {(i/n) . s i n θ i }) ······⑶ 根據上述式（1)及式（2)， W = 2 · (T/cos0r)· s infli* WS2·丁·sin0r/cos0r 根據式（3) W^2T# n s i n0i c o s |s i •(A) 於该式（A)中，入射角0 i為i ‘ 9〇。 於上述式（A)中，當（9 時，即成為： 此外 45( 、1· 46 (合成石英玻璃）The above formula (A) is obtained as follows. In Fig. 5, light incident on a point A0 in the surface 52A of the transparent substrate 52 is refracted at a refraction angle Θ r to enter the transparent substrate 52, and a point A1 in the back surface 52B of the transparent substrate 52 is reflected. . Regarding the condition for making the reflected light not incident into the maximum width w of the observation area 58, when the distance between the points AO and A1 is r, WS 2.r*cos(90o - 0r) W is obtained. ^2*r*sin6r ......(1> 2130-8797-PF 22 200811431 T=r · s in (90° —0r) T=r-(sin9〇° · c 〇s Θ rc os 9 0° -sin6r) Tf=r · cos0r (2) /. r =T/ cos Θ r The relationship between the incident angle 0 and the refraction angle Θ 将 when light is incident on the transparent substrate 52 of the refractive index n is: n= Sin0i/sin0r ··. si η 0 r = (1 / η) · sin 0 i ΛΘ r = si n-1 {(1/n)'· sin Θ i} Λ〇os Θ r = cos [si n~ l {(i/n) . sin θ i }) ······ (3) According to the above formula (1) and formula (2), W = 2 · (T/cos0r)· s infli* WS2·丁·sin0r /cos0r according to equation (3) W^2T# nsi n0i cos |si • (A) In the equation (A), the incident angle 0 i is i ' 9 〇. In the above formula (A), when (9 o'clock, it becomes: in addition 45 (, 1, 46 (synthetic quartz glass)

T 1. 10 7. 成正比 ，、可知觀察區域58的最大寬度W與透明基板52的厚度 以下說明光罩5 〇之製造步驟- 該光罩50之製造步驟係依序 Mank)製造步驟、阻劑圖案 驟“罩基底（mask 成步騍、遮罩圖案形成步 2130-8797-PF 23 200811431 驟、以及圖案缺陷檢查步驟。 ^述遮罩基底製造步驟係在透明基板52的表面形成 遮光膜等薄膜，在该薄膜上塗佈阻劑而形成阻劑膜。藉此 製造層豐構造的遮罩基底。上述阻劑圖案形成步驟係藉由 描緣機而對遮罩基底的阻劑膜照射例如雷射光束，使用光 柵（raster)描繪方式等任意的描繪方式進行描繪，且將 既定的圖案曝光在該阻劑膜，予以顯影而形成阻劑圖案。 上述遮罩圖案形成步驟係以阻劑圖案為遮罩而對上述薄 膜進行蝕刻，且在該薄膜形成反覆圖案51。 上述圖案缺陷檢查步驟係在形成反覆圖案5丨之後， 使用第1圖及第2圖之圖案缺陷檢查裝置1〇，在光罩5〇 之反覆圖案51中之任意位置設定觀察區域58，且由照明 裝置12對該觀察區域58照射照射光。尤其當觀察區域58 位於反覆圖案51之周邊部分時，係以覆蓋反覆圖案51及 遮光膜55的間隙L的方式配設光圈15，而使照射光不會 壽…、射在與上述間隙L相對應之透明基板5 2的表面5 2 A。在 該狀態下，觀察裝置13接收由反覆圖案51之觀察區域58 所產生的繞射光，藉此檢測該觀察區域58中之反覆圖案 51的缺陷。在反覆圖案51的所有區域設定觀察區域58 來實施上述缺陷檢查。 貫施上述之圖案缺陷檢查步驟作為光罩之製造步 靡』二吏um5a及一曝將上㈣一 遮罩圖案轉印在顯示裝置用基板上的阻劑膜，而在顯示裝 置用基板的表面形成根據該轉印圖案的畫素圖案，以.製造 2130-8797-PF 24 200811431 顯不裝置用基板。上述晝素圖案係例如液晶顯示面板之薄 膜電晶體或對向基板、彩色濾光片等反覆圖案。 由於構成為如上所示’根據上述實施形態，達成以下 之效果（1)至（5)。 (1) 根據使用圖案缺陷檢查裝置10之圖案缺陷檢查方 法，在光罩50之透明基板52上之反覆圖案51設定觀察 區域58，當於該觀察區域58中，藉由觀察由照射光所產 • 生的繞射光來檢查反覆圖案的缺陷時，將透明基板5 2之 觀察區域58以外之至少一部分（尤其反覆圖案51與遮光 膜55之間隙L)予以遮光。由此可防止由觀察區域58以 外入射至透明基板52内且在背面52B予以反射而通過透 明基板52内的漫射光入射至觀察區域58。結果可解決因 >哭射光所產生之缺陷檢查的不良情形，而可良好地檢測出 在反覆圖案51所產生的缺陷。 (2) 根據使用圖案缺陷檢查裝置1〇之圖案缺陷檢查方 • 法，以使觀察區域58之最大寬度W滿足式（A)的方式進行 設定，而且以使因透明基板52之觀察區域58的背面 所造成的反射光不會入射至該觀察區域58的方式予以設 置。因此，即使依照射至觀察區域58的照射光，亦不會 使漫射光入射至該觀察區域58，而可良好地檢測出在反^ 圖案51所產生的缺陷。 一~^ 由-於藉mu使·用上述—圖―案m查1置_^ 之圖案缺陷檢查方法之檢查步驟的製造步驟來製造光罩 50 ’因此可良好地檢測出該光罩5〇中之反覆圖案51的缺 2130-8797-PF 25 200811431 '七 陷。 (4) 藉由將油脂（grease)或乳油.（cream)塗佈在透 明基板52的背面52B、或者將透明基板52之表面52A浸 潰在油（oil)中等方法，亦可抑制人射至該透明基板52 的光在背S 52B反射。，然而，此時，有時透明基板52會 因上述油脂或油（〇i 1 )等而受到污染，而導致光罩5〇的 品質降低。相對於此，如本實施形態所示，抑制使用光圈 15而入射至透明基板52内的光，藉此抑制在背面52β反 射的光，藉此可確保光罩50的品質，且可檢測出在該反 覆圖案51所產生的缺陷。 (5) 由於使用實施使用圖案缺陷檢查裝置1〇之圖案缺 1¾仏查方法所製成的光罩5 〇而形成晝素圖案，以製造顯 示裝置用基板（例如液晶顯示面板），因此可提升該顯示 裝置用基板的品質。 〔B〕第2實施形態（第7圖、第8圖） 第7圖係顯示用以實施本發明之圖案缺陷檢查方法之 第2實施形態之圖案缺陷檢查裝置之概略侧面圖。於該第 2實施形態中，與前述第1實施形態相同的部分係標註相 同的元件符號，且省略說明。. 該第2實施形態與前述第1實施形態不同之處在於： 在4亥—圖一案—缺—陷—檢—查真4史—用-的-圖—案-缺浪檢-查-裝置^ 中’係使用衬勒照明（Kohler i 1 ion ) ’在作為照 明裝置之光源21侧之透鏡22中之前侧成像位置設置先圈 2130-8797-PF 26 200811431 2 3，且在透鏡2 2之後侧成像位置將光圈像2 4形成在光罩 5 0的表面。藉由該光圈像24，使來自照射在光罩5 0之光 源21之照射光的照射區域成為光罩50之觀察區域58，而 限制在該觀察區域58以外的部分照射照射光。 如第8圖所示’上述柯勒照明係由投光侧光學系及受 光侧光學系所構成，由投光侧光學系之光源透鏡25及聚 光透鏡（Condenser Lens) 26構成前述透鏡22。將配置 _ 在該等光源透鏡25及聚光透鏡26之前侧成像位置的光圈 23之光圈像24形成在光源透鏡25及聚光透鏡26的後侧 成像位置。該後侧成像位置係光罩5 〇的表面位置。藉由 上述光圈像24,使均勻的光由光源21照射在光罩5〇的觀 察區域58。第8圖中之受光光學系的透鏡27係第7圖所 不之受光光學系14的透鏡等，螢幕（screen) 28係例如 第7圖所示之觀察裝置13之CCD攝影機中的受光面。 此外，於使用上述之柯勒照明的圖案缺陷檢查裝置2〇 • 中，觀察裝置13所觀察之光罩50上的觀察區域58的最 大寬度W亦使用前述實施形態的式予以設定。 ’ 因此，藉由上述實施形態除了達成以下之效果（6)之 外，亦達成與前述實施形態的效果（2)至（5)相同的效果。 (6)根據使用圖案缺陷檢查裝置2〇之圖案缺陷檢查方 法，在光罩50之透明基板52上之反覆圖案51設定觀察 一~~—區II^一於 1 咳觀察區域48_冲一^藉-由觀察由一照_射一光聋產 生的繞射光來檢查反覆圖案51之缺陷時，藉由柯勒照明 所得之光圈像24係以限制朝向光罩5〇之上述觀察區域58 2130-8797-PF 27 - 200811431 以外的部分照射的方式來控制照射光的照射區域。由此， 此時亦可防止由觀察區域58以外入射至透明基板52内， 且在背面52B予以反射而通過透明基板52内的漫射光入 射至觀察區域58。結果可解決因漫射光所產生之缺陷檢查 的不良情形’而可良好地檢測出在反覆圖案所產生的 缺陷。 〔C〕第3實施形態（第1〇圖、第11圖） _ 於上述第1及第2實施形態中，係藉由適當設定作為 被檢查體之光罩5 0之被照明區域5 8 ’ （由照明裝置1 2 所照射的區域），來防止錯誤訊號混入（因漫射光所造成 的反射）觀察畫像。亦即，藉由光圈15或柯勒照明來限 制作為被檢查體之光罩50的被照明區域58，，且至少於 知、射光之入射側（接近照明裝置12之側）中使觀察區域 58的交界及被照明區域58’的交界相一致，藉此防止由 φ 觀察區域58外入射至光罩50内之光所引起的漫射光。 然而，當被照明區域58’小於觀察區域58時，在作 業時會有不便之處。相對於此，根據本實施形態，可一面 將被照明區域58’形成為大於觀察區域58的範圍.，一面 進行可靠性高的缺陷檢查。亦即，於照射光之入射側中， 即使為將被照明區域58’形成為大於觀察區域58的範圍 " 的_情〜形―2—亦-可由-適-當-调整入射—光敢入射角一一來-防—止 錯誤訊號混入（因漫射光所造成的反射）觀察晝像。 具體而言’於本實施形態中，係使用上述·圖案缺陷檢 2130-8797-PF 28 200811431 查裝置10，由作為照明手段之照明裝置12，以滿足下述 數式（β)之入射角Θ i，對光罩50照射光。 2 •(B) = s i η'1 + T2 W + D、 其中’如第10圖所示，於上述數式（β)中，Τ為透明 基板52的厚度，W為觀察區域58的最大寬度，η為透明 基板52的折射率。此外，D係於作為被檢查體之光罩5〇 之被照明區域58 (由照明裝置12所照射的區域）中， 於照射光之入射侧（接近照明裝置12之側）中之觀察區 域58外之照射寬度。亦即，於被照明區域58，比觀察區 域5 8更在肤射光之入射側加寬的情形下，被照明區域 58之中超過觀察區域58之區域的寬度即成為其中， 於照射光之入射側中，當觀察區域58及被照明區域58， 相一致時，則D = 〇。 上述式（B)係如下所示而求取。T 1. 10 7. In proportion, it is known that the maximum width W of the observation region 58 and the thickness of the transparent substrate 52 are described below. The manufacturing steps of the mask 5 - - the manufacturing steps of the mask 50 are sequential Mank) manufacturing steps, resistance The mask pattern "mask base (mask formation step, mask pattern formation step 2130-8797-PF 23 200811431 step, and pattern defect inspection step.) The mask substrate manufacturing step is to form a light shielding film on the surface of the transparent substrate 52. a film on which a resist is applied to form a resist film, thereby producing a mask substrate having a layered structure. The resist pattern forming step irradiates the resist film of the mask substrate by a tracer, for example. The laser beam is drawn by an arbitrary drawing method such as a raster drawing method, and a predetermined pattern is exposed on the resist film to be developed to form a resist pattern. The mask pattern forming step is a resist pattern. The film is etched for the mask, and the reverse pattern 51 is formed on the film. The pattern defect inspection step is performed after the pattern of the reverse pattern 5 is formed, and the pattern defects of the first and second patterns are used. The inspection device 1 is configured to set the observation region 58 at any position in the reverse pattern 51 of the mask 5, and the illumination region 12 irradiates the observation region 58 with illumination light, especially when the observation region 58 is located at the peripheral portion of the reverse pattern 51. The diaphragm 15 is disposed so as to cover the gap L between the reverse pattern 51 and the light shielding film 55, so that the irradiation light does not escape, and is incident on the surface 5 2 A of the transparent substrate 5 2 corresponding to the gap L. In this state, the observation device 13 receives the diffracted light generated by the observation region 58 of the reverse pattern 51, thereby detecting the defect of the reverse pattern 51 in the observation region 58. The observation region 58 is set in all regions of the reverse pattern 51 to be implemented. The above defect inspection step is performed as the mask manufacturing step of the photomask, and a resist film which is transferred onto the substrate for the display device by the exposure mask (4) and the display device A substrate pattern according to the transfer pattern is formed on the surface of the substrate to fabricate a substrate for a device of 2130-8797-PF 24 200811431. The above-described halogen pattern is a thin film transistor such as a liquid crystal display panel. In the above-described embodiment, the following effects (1) to (5) are achieved by the reverse pattern of the counter substrate, the color filter, etc. (1) The pattern defect inspection according to the pattern defect inspection device 10 is used. The method of setting the observation area 58 on the reverse pattern 51 on the transparent substrate 52 of the mask 50, in which the defect of the reverse pattern is inspected by observing the diffracted light generated by the illumination light, At least a portion other than the observation region 58 of the transparent substrate 52 (especially, the gap L between the reverse pattern 51 and the light shielding film 55) is shielded from light, thereby preventing entry into the transparent substrate 52 from outside the observation region 58 and reflection on the back surface 52B. The diffused light passing through the transparent substrate 52 is incident on the observation area 58. As a result, it is possible to solve the defect of the defect inspection by the > crying light, and the defect generated in the reverse pattern 51 can be satisfactorily detected. (2) The pattern defect inspection method using the pattern defect inspection device 1 is set such that the maximum width W of the observation region 58 satisfies the formula (A), and the observation region 58 of the transparent substrate 52 is used. The reflected light caused by the back surface is not incident on the observation area 58. Therefore, even if the irradiation light is irradiated to the observation area 58, the diffused light is not incident on the observation area 58, and the defect generated in the reverse pattern 51 can be satisfactorily detected. The photomask 50 is manufactured by the manufacturing process of the inspection step of the pattern defect inspection method of the above-mentioned figure - the case of the method of checking the pattern of the pattern defect inspection method, so that the mask 5 can be well detected. The lack of the pattern 51 in the absence of 2130-8797-PF 25 200811431 'seven traps. (4) By applying grease or cream to the back surface 52B of the transparent substrate 52 or by immersing the surface 52A of the transparent substrate 52 in an oil, it is also possible to suppress human exposure to The light of the transparent substrate 52 is reflected at the back S 52B. However, at this time, the transparent substrate 52 may be contaminated by the above-mentioned grease or oil (〇i 1 ) or the like, and the quality of the mask 5 may be lowered. On the other hand, as described in the present embodiment, the light incident on the transparent substrate 52 by the diaphragm 15 is suppressed, whereby the light reflected on the back surface 52β is suppressed, whereby the quality of the mask 50 can be ensured, and the light can be detected. The defect generated by the reverse pattern 51. (5) It is possible to form a substrate for a display device (for example, a liquid crystal display panel) by using a mask 5 which is formed by using a pattern defect inspection apparatus 1 to form a display device substrate (for example, a liquid crystal display panel). The quality of the substrate for the display device. [B] The second embodiment (Fig. 7 and Fig. 8) Fig. 7 is a schematic side view showing a pattern defect inspection device according to a second embodiment for carrying out the pattern defect inspection method of the present invention. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and their description is omitted. The second embodiment differs from the first embodiment in that: in the case of 4 hai - Fig. 1 - lack - trap - check - check truth history - use - map - case - lack of wave check - check - In the device ^, the lining illumination is used to set the front ring 2130-8797-PF 26 200811431 2 3 in the front side imaging position in the lens 22 as the light source 21 side of the illumination device, and at the lens 2 2 The rear side imaging position forms the aperture image 24 on the surface of the reticle 50. By the aperture image 24, the irradiation region from the irradiation light of the light source 21 irradiated to the mask 50 becomes the observation region 58 of the mask 50, and the portion other than the observation region 58 is restricted from being irradiated with the irradiation light. As shown in Fig. 8, the Kohler illumination system is composed of a light projecting side optical system and a light receiving side optical system, and the light source lens 25 and the condensing lens Lens 26 of the light projecting side optical system constitute the lens 22. The aperture image 24 of the aperture 23 at the imaging position on the front side of the light source lens 25 and the condensing lens 26 is formed at the rear imaging position of the light source lens 25 and the condensing lens 26. The rear side imaging position is the surface position of the mask 5 。. By the aperture image 24, uniform light is irradiated from the light source 21 to the observation area 58 of the mask 5A. The lens 27 of the light receiving optical system in Fig. 8 is a lens of the light receiving optical system 14 as shown in Fig. 7, and the screen 28 is a light receiving surface in a CCD camera of the observation device 13 shown in Fig. 7, for example. Further, in the pattern defect inspection apparatus 2 using the Kohler illumination described above, the maximum width W of the observation area 58 on the mask 50 observed by the observation apparatus 13 is also set using the equation of the above embodiment. Therefore, in addition to the effect (6) obtained as described above, the same effects as the effects (2) to (5) of the above-described embodiment are achieved. (6) According to the pattern defect inspection method using the pattern defect inspection device 2, the reverse pattern 51 on the transparent substrate 52 of the photomask 50 is set to observe one to the area II^1 in the 1 cough observation area 48_冲一^ By observing the defect of the reverse pattern 51 by observing the diffracted light generated by a photo-shooting, the aperture image 24 obtained by Kohler illumination is used to limit the observation area 58 2130 toward the mask 5〇- 8797-PF 27 - 200811431 The irradiation area of the irradiation light is controlled by a partial illumination method. Accordingly, at this time, it is possible to prevent incident light from entering the transparent substrate 52 outside the observation region 58 and to be reflected by the back surface 52B and to be incident on the observation region 58 through the diffused light in the transparent substrate 52. As a result, it is possible to solve the defect caused by the defect inspection by the diffused light, and the defect generated in the reverse pattern can be well detected. [C] Third embodiment (Fig. 1 and Fig. 11) _ In the first and second embodiments, the illuminated area 5 8 ' of the mask 50 as the object to be inspected is appropriately set. (The area illuminated by the illumination device 12) prevents the erroneous signal from being mixed in (reflection due to the diffused light) to observe the image. That is, the illuminated region 58 of the mask 50 as the object to be inspected is restricted by the aperture 15 or Kohler illumination, and the observation region 58 is made at least on the incident side of the light incident (near the side of the illumination device 12). The boundary between the boundary and the illuminated area 58' coincides, thereby preventing stray light caused by light incident on the inside of the reticle 50 by the φ observation area 58. However, when the illuminated area 58' is smaller than the observation area 58, there is an inconvenience in the operation. On the other hand, according to the present embodiment, it is possible to perform a highly reliable defect inspection while forming the illuminated region 58' to be larger than the range of the observation region 58. That is, in the incident side of the illuminating light, even if the area to be illuminated 58' is formed to be larger than the range of the observation area 58, the _ 情 - shape - 2 - can be - adapted - when - adjust the incident - light The angle of incidence is one by one - the anti-error signal is mixed in (reflection caused by diffused light) to observe the image. Specifically, in the present embodiment, the above-described pattern defect detection 2130-8797-PF 28 200811431 inspection device 10 is used, and the illumination device 12 as an illumination means satisfies the incident angle of the following equation (β). i, the reticle 50 is irradiated with light. 2 • (B) = si η'1 + T2 W + D, where 'as shown in Fig. 10, in the above formula (β), Τ is the thickness of the transparent substrate 52, and W is the maximum width of the observation region 58 η is the refractive index of the transparent substrate 52. Further, D is an observation area 58 in the illumination region 58 (the region illuminated by the illumination device 12) as the mask 5 of the inspection object, on the incident side of the illumination light (the side close to the illumination device 12). The width of the external illumination. That is, in the case where the illuminated region 58 is wider than the observation region 58 on the incident side of the skin light, the width of the region of the illuminated region 58 that exceeds the observation region 58 becomes therein, and the incident light is incident thereto. In the side, when the observation area 58 and the illuminated area 58 coincide, then D = 〇. The above formula (B) is obtained as follows.

由空氣（折射率1)入射至透明基板52之表面52A 中的點A。的光係以折射角0 r予以折射而進入透明基板 52 (折射率n)内，且在該透明基板52之背面52B中的點 Αι予以反射。 此日守根據司乃耳定律（Sne 11 ’ s 1 aw )，即得： _ S i n e j = η s i η Θ r ·…··⑴ " — —— 此外，觀察區域58的最大寬度為w，於反覆圖案51 之被照明區域58’中，當照射光之入射側中之觀察區域 2130-8797-PF 29 200811431 58外的照射寬度為D時，即得·· ^ a η Θ r = (W+D) / 2 T , "···. (2) 當關於求解（1)、（2)時，可得數式（b)。 北第11圖係顯示入射至光罩50的先以透明基板52的 月面52B予以反射之情形的概略側面圖，（&)係顯示如習 知所示為入射角較小時的情形’（b)係顯示按照本實施形 態設定入射角時的情形。當如習知所示為入射角較小時， φ如第11圖（a)所示，可知透過反覆圖案51以外的圖案55, 而藉由透明基板52之觀察區域58之背面52β予以反射的 光，係作為漫射光而進入觀察區域58。有時會因由該漫射 光所幵y成的像（影），而誤s忍為在反覆圖案5 1產生缺陷。 相對於此，於本實施形態中，如第1 1圖（b)所示，可知藉 由以滿足數式（B)的入射角照射光，使透過反覆圖案 51以外之圖案55，而由透明基板52之觀察區域58之背 面52B予以反射的光不會入射至觀察區域58。亦即，藉由 響 以滿足數式（B)的入射角0 i照射光，可防止錯誤檢測出 反覆圖案51中的缺陷。 其中，於本實施形態中，例如可將透明基板52的厚 度T為5mm以上、25mm以下的光罩50作為被檢查體。此 外’可將邊長為30mm以上、1500mm以下的長方形或正方 形的光罩50作為被檢查體。此外，當觀察區域58的尺寸 可-藉-由-1次-檢-查予以-攝像的視野-)極—小-B寺，·檢查-玫条會 降低，且檢查需要冗長的時間。而且，當實施缺陷檢查作 為光罩製品之製造步驟之步驟之一時，生產效率會降低。 2130-8797-PF 30 200811431 因此’觀察區域58之尺寸（可藉由1次檢查予以攝像的 視野）的最大寬度W係以1mm以上、50mm以下為佳。 〔D〕其他實施形態（第12圖） 以上係根據上述實施形態來說明本發明，但本發明並 非限定於此。。 例如亦可構成為：將照明裝置12或光源21配置在相 _ 對於載台11為與觀察裝置13相反的位置，由觀察裝置13 接收通過光罩50之光的繞射光，此時，將光圈15或光圈 像24設置或形成在光罩5〇之背面52β的外側附近，在透 明基板52内予以反射的光不會形成漫射光而入射至觀察 區域58。 亦即’本發明並非僅為第12圖（a)所示之配置，亦可 於第12圖（b)至（d)之任一配置中適當使用。第12圖係顯 不本發明之實施形態之照明裝置丨2、觀察裝置13及光罩 _ 50之配置的概略圖’（a)係顯示由光罩的表面側照射光而 接文该反射光的情形，（1))係顯示由光罩的背面側照射光 而接叉该反射光的情形，（c)係顯示由光罩的背面側照射 光而接叉該透射光的情形，係顯示由光罩的表面侧照 射光而接受該透射光的情形。 〜一——實施例：------ 以下就本發明之實施例，一面加入比較例加以說明。 百先’在由厚度T="l 3.0mm、折射率n= 1.46之合成The point A in the surface 52A of the transparent substrate 52 is incident from the air (refractive index 1). The light is refracted at a refraction angle of 0 r into the transparent substrate 52 (refractive index n), and a dot in the back surface 52B of the transparent substrate 52 is reflected. According to the Sne 11 's 1 aw law, this day is obtained: _ S inej = η si η Θ r ·... (1) " — —— In addition, the maximum width of the observation area 58 is w, In the illuminated region 58' of the reverse pattern 51, when the illumination width outside the observation region 2130-8797-PF 29 200811431 58 in the incident side of the illumination light is D, then ··· a η Θ r = (W +D) / 2 T , "···. (2) When solving (1), (2), the equation (b) is obtained. Fig. 11 is a schematic side view showing a state in which the incident mask 50 is first reflected by the lunar surface 52B of the transparent substrate 52, and (&) shows a case where the incident angle is small as shown by a conventional one. (b) shows the case where the incident angle is set according to the present embodiment. When it is conventionally shown that the incident angle is small, φ is as shown in Fig. 11(a), and it is understood that the pattern 55 other than the reverse pattern 51 is reflected by the back surface 52β of the observation region 58 of the transparent substrate 52. Light enters the viewing area 58 as diffuse light. Sometimes, due to the image (shadow) formed by the diffused light, a defect is generated in the reverse pattern 51. On the other hand, in the present embodiment, as shown in FIG. 1(b), it is understood that the light is irradiated by the incident angle satisfying the equation (B), and the pattern 55 other than the reverse pattern 51 is transmitted through the transparent pattern 51. Light reflected by the back surface 52B of the observation region 58 of the substrate 52 is not incident on the observation region 58. That is, by illuminating the light by the incident angle 0 i of the equation (B), it is possible to prevent erroneous detection of defects in the reverse pattern 51. In the present embodiment, for example, the mask 50 having a thickness T of the transparent substrate 52 of 5 mm or more and 25 mm or less can be used as the object to be inspected. Further, a rectangular or square mask 50 having a side length of 30 mm or more and 1500 mm or less can be used as the object to be inspected. In addition, when the size of the observation area 58 can be - borrowed - by -1 - inspection - inspection - the field of view of the camera -) pole - small - B temple, · inspection - rose strip will be reduced, and inspection takes a long time. Moreover, when defect inspection is performed as one of the steps of the manufacturing steps of the reticle article, the production efficiency is lowered. 2130-8797-PF 30 200811431 Therefore, the maximum width W of the size of the observation area 58 (the field of view that can be imaged by one inspection) is preferably 1 mm or more and 50 mm or less. [D] Other Embodiments (Twelfth Embodiment) The present invention has been described above based on the above embodiments, but the present invention is not limited thereto. . For example, the illuminating device 12 or the light source 21 may be disposed in a phase where the stage 11 is opposite to the observation device 13 and the observation device 13 receives the diffracted light passing through the reticle 50. 15 or the aperture image 24 is disposed or formed near the outer side of the back surface 52β of the mask 5, and the light reflected in the transparent substrate 52 is incident on the observation region 58 without forming diffused light. That is, the present invention is not only the configuration shown in Fig. 12(a), but may be suitably used in any of the configurations of Fig. 12(b) to (d). Fig. 12 is a schematic view showing the arrangement of the illuminating device 2, the observation device 13, and the reticle -50 of the embodiment of the present invention. (a) shows that the surface of the reticle is irradiated with light to receive the reflected light. In the case of (1)), the light is irradiated by the back side of the mask to illuminate the reflected light, and (c) is a case where the light is irradiated from the back side of the mask to align the transmitted light. The light is received by the surface side of the photomask to receive the transmitted light. ~1 - EXAMPLES:------ The following is a description of an embodiment of the present invention by adding a comparative example.百先' in the synthesis of thickness T="l 3.0mm, refractive index n= 1.46

2130-8797-PF 31 200811431 石英玻璃所構成的1220麵140〇IDm之平滑的透明基板Μ =表面上，藉由㈣法形成以.為主成分之遮光膜。接 著’在該遮光膜上塗佈正型阻劑， 土 , 一 稭由液晶裝置用曝光 機，描緣反覆排列好單位圖案 及複圖案，而將阻劑圖案 予以顯影H以該阻劑圖案為遮罩，將上述遮光膜進 行濕式钱刻，而形成具備反覆圖案51之遮光膜圖率，夢 此形成光罩5°。反覆圖案51係形成為縱横間距相心 子狀圖案。 接著，以光罩50為被檢查體，且載置於缺陷檢查裳 :之載台11上。接著，由照明裝置12對光罩5。照射光， 藉由配置在光罩50之垂直上方的顴究 々97蜆察裝置13 ( CCD攝影 機）接收來自光罩50的反射光而進行攝影。此時之觀察 區域58的最大寬度w為I8mm。 當由照明裝置12以入射角θϋ。照射光時，即在 距離觀察區域58内之觀察區域58的端部14随的位置， 視認出由觀察區域58外人射至光罩5()之光所引起的漫射 光（像）（比較例）。此係鱼葬由μ、+、古，、 你…藉由上述數式β所導出的結果 相一致。 此外，當由照明裝置12以入射角Θ卜3〇。照射光 時’在觀察區域58内’並未視認出由觀察區域Μ外入射 至光罩50之光所引起的漫射光（實施例）。此係與藉由上 述數式Β所導出的結果（因由觀察區《58外人射至光罩 5。之光所引起的漫射光（像）係移動至距離觀察區域58 之端部19. 2mm的位置）相一致。 2130-8797-PF 32 200811431 【圖式簡單說明】 第1圖係顯示用以實祐.士政 只％本發明之圖案缺陷檢查方法之 第1實施形態之圖案缺陷檢杳壯 1曰饱笪叙置之概略側面圖。 第2圖係顯不於第1圓夕闽 因之圖案缺陷檢查裝置中，入射 光與繞射光之關係的概略侧面目。 弟3圖係用以έ兄明第]jgj芬势 乐i圖及弟2圖中之光罩的反覆圖 案與來自該反覆圖案之繞射光等之圖。2130-8797-PF 31 200811431 A smooth transparent substrate of 1220 surface 140 〇 IDm composed of quartz glass Μ = a light-shielding film based on (4) is formed by the method of (4). Then, a positive resist is applied to the light-shielding film, and a straw is used by the liquid crystal device to expose the unit pattern and the complex pattern, and the resist pattern is developed by the resist pattern. In the mask, the light-shielding film is wet-etched to form a light-shielding film having the reverse pattern 51, and the mask is formed to be 5°. The reverse pattern 51 is formed as a vertical and horizontal pitch phase-like pattern. Next, the photomask 50 is used as a test object, and is placed on the stage 11 on which the defect inspection is performed. Next, the mask 5 is attached by the illumination device 12. The illuminating light is photographed by receiving the reflected light from the reticle 50 by the illuminating device 13 (CCD camera) disposed vertically above the reticle 50. The maximum width w of the observation area 58 at this time is I8 mm. When the illumination device 12 is at an incident angle θ ϋ. When the light is irradiated, that is, at a position along the end portion 14 of the observation region 58 in the observation region 58, the diffused light (image) caused by the light emitted from the outside of the observation region 58 to the mask 5 (view) is recognized (Comparative Example) ). This family of fish burial is consistent with the results derived from μ, +, Gu, and... by the above equation β. Further, when the illumination device 12 is at an incident angle, it is 3 〇. When the light is irradiated, 'during the observation area 58', the diffused light caused by the light incident on the mask 50 outside the observation area is not recognized (Embodiment). This is the result of the above-mentioned equation 《 2 因 ( 因 因 因 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 Position) consistent. 2130-8797-PF 32 200811431 [Simple description of the drawing] Fig. 1 shows the pattern defect detection of the first embodiment of the pattern defect inspection method of the present invention. A rough side view. Fig. 2 is a schematic view showing the relationship between incident light and diffracted light in the pattern defect inspection device. The brother 3 is a picture of the reticle of the mask of the j 明 ] ] j j j j 及 及 及 及 及 及 及 及 及 及 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。

第4圖係顯不第1圖至第3圖之光罩中的反覆圖案所 產生的缺fe，（A)及（B)係分別顯示座標位置變動系之缺 陷，（C)及（D)係分別顯示尺寸變動系之缺陷的概略圖。 第5圖係用以決定觀察區域之最大寬度的說明圖。 第6圖係顯示以第1圖、第9圖之觀察裝置所觀察到 的晝像，（A)係顯示第1圖之觀察裝置的晝像，（B)係顯示 第9圖之觀察裝置的晝像之示意圖。 弟7圖係顯示用以貫施本發明之圖案缺陷檢查方法之 第2實施开> 恶之圖案缺陷檢查裝置之概略側面圖。 第8圖係用以說明第7圖所使用之柯勒照明（Kohler illumination)的光路圖 ° 第9圖係顯示習知之圖案缺陷檢查裝置之概略側面 :·圖。 第10圖係顯示入射至透明基板的光在透明基板的背 侧予以反射之情形的概略側面圖。 第11圖係顯示入射至光罩的光在透明基板的背面予 以反射之情形的概略侧面圖，（a)係顯示如習知所示之入 2130-8797-PF 33 200811431 、角lx j B寸的情形，（b )係顯示按照本實施形態設定入射 角時的情形。 第12圖係顯示本發明之實施形態之照明裝置、觀察 裝置及光罩之配置的概略圖，（a)係顯示由光 ’丁、 照射光而接受該反射光的情形，⑻係顯示由光：面側 側照射光而接受該反射光的情形，(c)係顯示”罩的背面 面侧照射光而接受該透射光的情形，（d) >、-光罩的背 表面側照射光而接受該透射光的情形。 、光罩的 【主要元件符號說明】 10圖案缺陷檢查裝置 11載台 12 照明裝置 13 觀察裝置 14 受光光學系 15 光圈_ 20 圖案缺陷檢查裝置 21 光源 22 透鏡 23 光圈 24 光圈像 25 光源透鏡 26 聚光透鏡 27 透鏡 34Fig. 4 shows the absence of the repetitive pattern in the mask of Figs. 1 to 3, and (A) and (B) show the defects of the coordinate position change system, respectively (C) and (D). A schematic diagram showing the defects of the dimensional change system is displayed separately. Figure 5 is an explanatory diagram for determining the maximum width of the observation area. Fig. 6 is a view showing an image observed by the observation apparatus of Figs. 1 and 9, (A) showing an image of the observation apparatus of Fig. 1, and (B) showing an observation apparatus of Fig. 9. Schematic diagram of the image. Fig. 7 is a schematic side view showing a second embodiment of the method for inspecting the pattern defect of the present invention. Fig. 8 is a view showing the optical path of the Kohler illumination used in Fig. 7. Fig. 9 is a schematic side view showing a conventional pattern defect inspection device: Fig. Fig. 10 is a schematic side view showing a state in which light incident on a transparent substrate is reflected on the back side of the transparent substrate. Fig. 11 is a schematic side view showing a state in which light incident on the reticle is reflected on the back surface of the transparent substrate, and (a) shows a 2130-8797-PF 33 200811431, angle lx j B inch as shown in the prior art. In the case of (b), the case where the incident angle is set according to the present embodiment is shown. Fig. 12 is a schematic view showing the arrangement of an illumination device, an observation device, and a photomask according to an embodiment of the present invention, wherein (a) shows that the reflected light is received by the light and the illumination light, and (8) shows that the light is received by the light. When the surface side is irradiated with light and the reflected light is received, (c) shows that the back surface side of the cover is irradiated with light to receive the transmitted light, (d) >, the back surface side of the photomask is irradiated with light. The case of receiving the transmitted light. [Main component symbol description of the photomask] 10 pattern defect inspection device 11 stage 12 illumination device 13 observation device 14 light receiving optical system 15 aperture _ 20 pattern defect inspection device 21 light source 22 lens 23 aperture 24 aperture image 25 light source lens 26 concentrating lens 27 lens 34

2130-8797-PF 200811431 28 螢幕 50光罩 51 反覆圖案 52 透明基板 52A透明基板52之表面 52B透明基板52之背面 53 單位圖案 54 缺陷區域 0 5 5遮光膜 55’圖案 58 .觀察區域 58’被照明區域 92 觀察裝置 100光罩 101透明基板 0 1 01A透明基板101的表面 101B透明基板101的背面 102反覆圖案 103觀察區域 104遮光膜 104圖案 105影 2130-8797-PF 352130-8797-PF 200811431 28 Screen 50 Mask 51 Reverse Pattern 52 Transparent Substrate 52A Surface 52B of Transparent Substrate 52 Back Surface 53 of Transparent Substrate 52 Unit Pattern 54 Defective Area 0 5 5 Light-Shielding Film 55' Pattern 58. Observation Area 58' Illumination area 92 observation apparatus 100 photomask 101 transparent substrate 0 1 01A transparent substrate 101 surface 101B transparent substrate 101 back surface 102 reverse pattern 103 observation area 104 light shielding film 104 pattern 105 shadow 2130-8797-PF 35

Claims (1)

200811431 十、申請專利範圍： 1 · 一種圖案缺陷檢查方法，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在上 述反覆圖案所產生之缺陷， 其特徵在於： 藉由照明手段，將光以既定之入射角Θ i照射在上述 反覆圖案； _ 於上述反覆圖案上之既定的觀察區域中，藉由觀察手 段觀察由照射光所產生的繞射光，藉此檢查上述反覆圖案 有無缺陷；及 將上述被檢查體之上述觀察區域以外之至少一部分 予以遮光。 2. —種圖案缺陷檢查方法，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， _ 其特徵在於： 藉由照明手段，將光以既定之入射肖照射在上述 反覆圖案； 於上述反覆圖案上之既定的觀察區域中，藉由觀察手 段觀察由照射光所產生的繞射光，藉此檢查上述反覆圖案 有無缺陷；及 …以限制對上述被檢查體之上述觀察區域以外的部分 進行照射的方式控制照射光之照射區域。 3. -種圖案缺陷檢查方法’用以檢查在透明基板上形 2130-8797-PF 36 200811431 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， 其特徵在於： 藉由照明手段，將光以既定之入射角0i照射在上述 反覆圖案； 於上述反覆圖案上之既定的觀察區域中，藉由觀察手 段觀察由照射光所產生的繞射光，藉此檢查上述反覆圖案 有無缺陷；及 η 以使由上述透明基板之上述觀察區域之背面所得之 反射光不會入射至該觀察區域的方式，當上述透明基板之 厚度為τ’上述觀察區域之最大寬度$ w，上述透明基板 之折射率為η肖，以滿足以下式（A)的方式設定觀察區域 之最大寬度W :200811431 X. Patent application scope: 1 . A pattern defect inspection method for inspecting a defect generated in the above-mentioned reverse pattern in an object to be inspected on a transparent substrate and having a repeating pattern of periodically arranged unit patterns, characterized in that : illuminating the light with a predetermined incident angle Θ i by the illumination means; _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Checking whether the above-mentioned reverse pattern has defects; and shielding at least a part of the above-mentioned observation area of the object to be inspected. 2. A method for inspecting a pattern defect for inspecting a defect generated in the above-mentioned reverse pattern in an object to be inspected having a repeating pattern in which a unit pattern is periodically arranged on a transparent substrate, characterized in that: by means of illumination And irradiating the light to the reverse pattern with a predetermined incident angle; and observing the diffracted light generated by the illumination light by an observation means in a predetermined observation area on the reverse pattern, thereby checking whether the repeated pattern has defects; The irradiation area of the irradiation light is controlled such that the portion other than the observation region of the object to be inspected is restricted from being irradiated. 3. A pattern defect inspection method 'to detect a defect generated in the above-mentioned reverse pattern in a test object having a repeating pattern in which a unit pattern is periodically arranged on a transparent substrate 2130-8797-PF 36 200811431 The method is characterized in that light is irradiated onto the reverse pattern at a predetermined incident angle 0i by means of illumination; and the diffracted light generated by the illumination light is observed by an observation means in a predetermined observation area on the reverse pattern Checking whether the reverse pattern has defects; and η such that the reflected light obtained from the back surface of the observation region of the transparent substrate is not incident on the observation region, and the thickness of the transparent substrate is τ' the maximum width of the observation region $ w, the refractive index of the transparent substrate is η Xiao, and the maximum width W of the observation region is set in such a manner as to satisfy the following formula (A): η s i n 0iη s i n 0i (A) • 一種圖案缺陷檢查方法，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， 其特徵在於： 藉由照明手段，將光以既定之入射角^照射在上述 反覆圖案； 於上述反覆圖案上之既定的觀察區域中，藉由觀察手 段觀察由照射光所產生的繞射光，藉此檢查上述反覆圖案 2130-8797-PF 37 200811431 有無缺陷； 以使由上述透明基板之上述觀察區域之背面所得之 反射光不會人射至該觀察區域的方^，當上述透明基板之 厚度為τ，上述觀察區域之最大寬度為f，上述㈣以 之折射率為η _，以滿足以下式（A)的方式設定觀察區域 之最大寬度W ;及 將上述被檢查體之上述觀察區域以外之至少一部分 予以遮光： w^—·. η i η64 s i n^i •(A) • 5· —種圖案缺陷檢查方法，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， 其特徵在於： 藉由照明手段，將光以既定之入射角照射在上述 反覆圖案； 於上述反復圖木上之既疋的觀察區域中，藉由觀察手 段觀察由照射光所產生的繞射光，藉此檢查上述反覆圖案 有無缺陷； 以使由上述透明基板之上述觀察區域之背面所得之 反射光不會入射至該觀察區域的方式，當上述透明基板之 厚度為T，上述觀察區域之最大寬度為w，上述透明基板 之折射率為η時，以滿足以下式（幻的方式設定觀察區域 2130-8797-PF 38 200811431 之最大寬度w;及 、限制對上述被檢查體之上述觀察區域以外的部分 進打照射的方式控制照射光之照射區域： 2T i n^i —"(A) η •種圖案缺陷檢查方法，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， 其特徵在於： 藉由使用柯勒照明的照明手段，將光以既定之入射角 0 i照射在上述反覆圖案； ^於上述反覆圖案上之既定的觀察區域中，藉由觀察手 &觀察由照射光所產生的繞射光’藉此檢查上述反覆圖案 有無缺陷；及 • 使+用上述柯勒照明，將光圈像形成在上述被檢查體的 ^面，藉此以限制對上述被檢查體之上述觀察區域以外的 p刀進行照射的方式控制照射光之照射區域。 7. -種圖案缺陷檢查方法，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， 其特徵在於： 藉由照明手段，將光以既定之人射角0 i照射在上述 反覆圖案； 2130-87 97-pf 39 200811431 於上述反覆圖案上之既定的觀察區域中，藉由受光手 段接文由照射光所產生的反射光或透射光，而觀察該所接 受到的光，藉此檢查上述反覆圖案有無缺陷；及 畜上述透明基板之厚度為τ，上述觀察區域之最大寬 度為W，上述透明基板之折射率4 η，且於上述被檢查體 之被照明區域中，該照射光之入射側中之該觀察區域外之 照射寬度為D時，以滿足以下數式（Β)的入射角0 i照射 光： W+ ~Ύ fW+DV — ……(B) + T2 〇 8· —種圖案缺陷檢查裝置，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， 其特徵在於具有： Φ 載置台，用以載置上述被檢查體； 照明手段，以既定之入射角將光照射在載置於上 述載置台之被檢查體上之上述反覆圖案； ^觀察手段，於上述反覆圖案上之既定的觀察區域中， 藉由受光手段接受由該照射光所產生的反射光或透射光； 解析手段，用以解析由該受光手段所接受到的光；以 及 遮光手^又，以使由上述透明基板之上述觀察區域的背 面所產生的反射光不會入射至該觀察區域的方式，當上述 2130-87 97 —PF 40 200811431 透明基板之厚度為T，上述觀察區域之最大寬度為w，上 述透明基板之折射率為n時，以滿足以下式（A)的方式將 上述被檢查體之上述觀察區域以外之至少一部分予以遮 光： w^—·. η s i n^i (A) 9· 一種圖案缺陷檢查裝置，用以檢查在透明基板上形 成有周期性排列好單位圖案之反覆圖案之被檢查體中在 上述反覆圖案所產生之缺陷， 其特徵在於具有： 載置台’用以載置上述被檢查體； 照明手段，以既定之入射角Θ丨將光照射在載置於上 述載置台之被檢查體上之上述反覆圖案； 觀$手^又於上述反覆圖案上之既定的觀察區域中， 藉由受光手段接受由該照射光所I生的反射光 光；以及 解析手段，用以解析由該受光手段所接受到的光， 上述照明手段係以使由上述透明基板之上述觀察區 ，的背面所產生的反射光不會人射至該觀察區域的方 /、田上述透明基板之厚度A τ，上述觀察區域之最大寬 度為W’上述透明基板之折射率為η時，以滿足以下式⑴ 的方式限制照射光之照射區域： 213〇~8797~pf 41 200811431 W^—.. η co(A) A pattern defect inspection method for inspecting a defect generated in the above-mentioned reverse pattern in an object to be inspected having a repeating pattern in which a unit pattern is periodically arranged on a transparent substrate, characterized by: by means of illumination And irradiating the light to the reverse pattern at a predetermined incident angle; and observing the diffracted light generated by the illumination light by an observation means in a predetermined observation area on the reverse pattern, thereby checking the repeated pattern 2130-8797 -PF 37 200811431 Is there a defect; such that the reflected light obtained from the back surface of the observation region of the transparent substrate is not incident on the observation region, when the thickness of the transparent substrate is τ, the maximum width of the observation region In the above (4), the refractive index is η _ , and the maximum width W of the observation region is set so as to satisfy the following formula (A); and at least a part of the observation region other than the observation region is shielded from light: w^— · η i η64 sin^i • (A) • 5· — A pattern defect inspection method for checking the formation of a week on a transparent substrate Defects generated in the reverse pattern in the object to be inspected by the repeating pattern of the unit pattern, wherein the light is irradiated onto the repeating pattern at a predetermined incident angle by illumination means; In the observation area of the cymbal, the diffracted light generated by the illuminating light is observed by the observation means, thereby checking whether the repetitive pattern has defects; so that the reflected light obtained from the back surface of the observation area of the transparent substrate is not incident. In the manner of the observation region, when the thickness of the transparent substrate is T, the maximum width of the observation region is w, and the refractive index of the transparent substrate is η, the following formula is satisfied (the observation region 2130-8797 is set in a magical manner). The maximum width w of the PF 38 200811431; and the irradiation area for controlling the irradiation of the portion other than the observation area of the object to be inspected: 2T in^i —"(A) η An inspection method for inspecting an object to be inspected on a transparent substrate on which a repeating pattern of periodically arranged unit patterns is formed The defect generated by the above-mentioned reverse pattern is characterized in that: by using an illumination means of Kohler illumination, light is irradiated onto the reverse pattern at a predetermined incident angle 0 i; ^ in a predetermined observation area on the reverse pattern, By observing the hand & observing the diffracted light generated by the illumination light, thereby checking whether the above-mentioned reverse pattern has a defect; and • using + the Kohler illumination to form an aperture image on the surface of the object to be inspected The irradiation area of the irradiation light is controlled so as to restrict irradiation of the p-knife other than the observation area of the object to be inspected. 7. A pattern defect inspection method for checking that a periodic arrangement of a unit pattern is formed on a transparent substrate a defect generated in the above-mentioned reverse pattern in the object to be inspected by the repeated pattern, wherein the light is irradiated to the above-mentioned reverse pattern by a predetermined human angle of incidence 0 i by illumination means; 2130-87 97-pf 39 200811431 In the predetermined observation area on the above-mentioned reverse pattern, the reflected light or the transmitted light generated by the illumination light is received by the light receiving means. Receiving the light, thereby checking whether the reverse pattern has defects; and the thickness of the transparent substrate of the animal is τ, the maximum width of the observation area is W, the refractive index of the transparent substrate is 4 η, and the object to be inspected In the illuminated area, when the irradiation width outside the observation area on the incident side of the irradiation light is D, the light is irradiated to satisfy the following angle (Β): W+ ~Ύ fW+DV — ...... (B) + T2 〇8 - a pattern defect inspection device for inspecting a defect generated in the above-mentioned reverse pattern in a test object in which a reverse pattern of periodically arranging a unit pattern is formed on a transparent substrate, characterized in that And a Φ mounting table for placing the object to be inspected; and an illumination means for irradiating light onto the object to be inspected on the mounting table at a predetermined incident angle; In a predetermined observation area on the pattern, the reflected light or the transmitted light generated by the illumination light is received by the light receiving means; and the analysis means is configured to analyze the light receiving means The light received; and the light-shielding hand, so that the reflected light generated by the back surface of the observation region of the transparent substrate is not incident on the observation region, when the above-mentioned 2130-87 97-PF 40 200811431 transparent substrate When the thickness is T, the maximum width of the observation region is w, and when the refractive index of the transparent substrate is n, at least a part of the observation region other than the observation region is shielded so as to satisfy the following formula (A): w^ —·. η sin^i (A) 9· A pattern defect inspection device for inspecting a defect generated in the above-mentioned reverse pattern in an object to be inspected on a transparent substrate on which a repeating pattern of a unit pattern is periodically arranged is formed. The method includes: a mounting table for placing the object to be inspected; and an illumination means for irradiating light onto the object to be inspected on the mounting table at a predetermined incident angle ;; Further, in a predetermined observation area on the above-mentioned reverse pattern, the reflected light generated by the illumination light I is received by the light receiving means; and an analysis means is The light is received by the light receiving means, and the illumination means is such that the reflected light generated by the back surface of the observation region of the transparent substrate is not incident on the observation area. The thickness A τ, when the maximum width of the observation region is W', and the refractive index of the transparent substrate is η, the irradiation region of the irradiation light is limited to satisfy the following formula (1): 213〇~8797~pf 41 200811431 W^—. . η co (A) 10. -種圖案缺陷檢查裝置，用以檢查在透明基板上 形成有周期性排列好單位圖案之反覆圖案之被檢查體中 在上述反覆圖案所產生之缺陷， 其特徵在於具有： 載置台，用以載置上述被檢查體； _ M明手段，以既定之人射角θί將光照射在載置於上 述載置台之被檢查體上之上述反覆圖案； 觀察手段，於上述反覆圖案上之既定的觀察區域中， 藉由受光手段接受由該照射光所產生的反射光或透射 光；以及 解析手段，用以解析由該受光手段所接受到的光， 上述照明手段係當上述透明基板之厚度為τ，上述觀 • 察區域之最大寬度為w，上述透明基板之折射率為η，且 於上述被檢查體之被照明區域中，該照射光之入射側中之 該觀察區域外之照射寬度為D時，以滿足以下數式⑻的 入射角Θ i照射光：(A) 10. A pattern defect inspection apparatus for inspecting a defect generated in the above-mentioned reverse pattern in an object to be inspected having a periodic pattern in which a unit pattern is periodically formed on a transparent substrate, characterized by having: And a means for placing the object to be inspected by the means for illuminating the object to be placed on the object to be inspected at a predetermined angle θί; the means for observing the pattern In the predetermined observation area, the reflected light or the transmitted light generated by the illumination light is received by the light receiving means; and the analysis means for analyzing the light received by the light receiving means, wherein the illumination means is transparent The thickness of the substrate is τ, the maximum width of the viewing region is w, and the refractive index of the transparent substrate is η, and in the illuminated region of the object to be inspected, the observation region outside the incident side of the illumination light When the irradiation width is D, the light is irradiated to meet the incident angle Θ i of the following formula (8): W+D、 ~2~ ，W+D、1 2 + T2 (B) 2130-87 97-PF 42 1 1 ·如申請專利範圍第1 〇項之圖案缺陷檢查裝置，其 2 中’上述透明基板的厚度T在5mm以上、25mm以下之範圍 200811431 時，上述觀察區域之最大寬度W在ι_以上、5〇mm以卞的 範圍。 12. —種光罩之製造方法，其特徵在於：被檢查體為 光罩，且包含實施如中請專利範圍第1至7項中任一項之 圖案缺陷檢查方法之檢查步驟。W+D, ~2~, W+D, 1 2 + T2 (B) 2130-87 97-PF 42 1 1 · The pattern defect inspection device according to the first aspect of the patent application, wherein the above-mentioned transparent substrate When the thickness T is in the range of 5 mm or more and 25 mm or less, the maximum width W of the observation region is in the range of 1⁄4 or more and 5〇mm. A method of manufacturing a reticle, characterized in that the object to be inspected is a reticle, and includes an inspection step of performing the pattern defect inspection method according to any one of the first to seventh aspects of the patent application. 種,4示衣置用基板之製造方法，其特徵在於： 使用如中請專利範圍第12項之光罩之製造方法所得之光 罩而形成晝素ϋ案’以製造顯示裝置用基板。In the method of producing a substrate for a garment, the substrate for a display device is manufactured by using a reticle obtained by the method for producing a reticle according to the twentieth aspect of the patent application. 2130-8797-PF 432130-8797-PF 43
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KR101320183B1 (en) 2013-10-22

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