TW200802837A - Solid-state imaging device and method of operating solid-state imaging device - Google Patents

Solid-state imaging device and method of operating solid-state imaging device

Info

Publication number
TW200802837A
TW200802837A TW096109105A TW96109105A TW200802837A TW 200802837 A TW200802837 A TW 200802837A TW 096109105 A TW096109105 A TW 096109105A TW 96109105 A TW96109105 A TW 96109105A TW 200802837 A TW200802837 A TW 200802837A
Authority
TW
Taiwan
Prior art keywords
charge transfer
imaging device
state imaging
transfer element
solid
Prior art date
Application number
TW096109105A
Other languages
English (en)
Inventor
Fumiaki Futamura
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Publication of TW200802837A publication Critical patent/TW200802837A/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1575—Picture signal readout register, e.g. shift registers, interline shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H04N3/1562—Control of the image-sensor operation, e.g. image processing within the image-sensor for selective scanning, e.g. windowing, zooming

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW096109105A 2006-03-16 2007-03-16 Solid-state imaging device and method of operating solid-state imaging device TW200802837A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006072164A JP2007251594A (ja) 2006-03-16 2006-03-16 固体撮像装置および固体撮像装置の動作方法

Publications (1)

Publication Number Publication Date
TW200802837A true TW200802837A (en) 2008-01-01

Family

ID=38517364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109105A TW200802837A (en) 2006-03-16 2007-03-16 Solid-state imaging device and method of operating solid-state imaging device

Country Status (4)

Country Link
US (1) US7872674B2 (zh)
JP (1) JP2007251594A (zh)
CN (1) CN101038929B (zh)
TW (1) TW200802837A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555184B (zh) * 2010-11-30 2016-10-21 半導體能源研究所股份有限公司 光感測器之驅動方法，半導體裝置之驅動方法，半導體裝置及電子裝置
TWI741157B (zh) * 2017-02-28 2021-10-01 美商光程研創股份有限公司 高速光偵測裝置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7506491B2 (ja) * 2020-03-04 2024-06-26 キヤノン株式会社 撮像装置及びその制御方法、撮像システム

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2949861B2 (ja) * 1991-01-18 1999-09-20 日本電気株式会社 Ｃｃｄリニアイメージセンサ
JPH04343587A (ja) * 1991-05-21 1992-11-30 Nec Corp 固体撮像装置の駆動方法
JP2895666B2 (ja) * 1991-09-06 1999-05-24 沖電気工業株式会社 電荷結合装置の駆動方法
JPH05235318A (ja) * 1992-02-25 1993-09-10 Matsushita Electron Corp 固体撮像装置及びその駆動方法
US6452634B1 (en) * 1996-12-26 2002-09-17 Sony Corporation Charge transfer device and method of driving the same, and solid state imaging device and method of driving the same
JPH10271394A (ja) * 1997-03-24 1998-10-09 Sony Corp 電荷転送装置およびこれを用いた固体撮像装置
JP4276334B2 (ja) 1999-06-18 2009-06-10 株式会社東芝 固体撮像装置およびその制御方法
JP4665276B2 (ja) * 1999-11-08 2011-04-06 ソニー株式会社 固体撮像装置及びその駆動方法
JP2001244448A (ja) 2000-02-25 2001-09-07 Nec Corp リニアイメージセンサおよびその使用方法
JP2001244451A (ja) * 2000-02-29 2001-09-07 Fuji Film Microdevices Co Ltd 固体撮像装置
JP2002314883A (ja) 2001-04-09 2002-10-25 Sony Corp 固体撮像装置
US7015520B1 (en) * 2004-10-13 2006-03-21 Eastman Kodak Company Charge-coupled devices having efficient charge transfer rates

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555184B (zh) * 2010-11-30 2016-10-21 半導體能源研究所股份有限公司 光感測器之驅動方法，半導體裝置之驅動方法，半導體裝置及電子裝置
US9848149B2 (en) 2010-11-30 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Method for driving photosensor, method for driving semiconductor device, semiconductor device, and electronic device
TWI741157B (zh) * 2017-02-28 2021-10-01 美商光程研創股份有限公司 高速光偵測裝置

Also Published As

Publication number Publication date
CN101038929B (zh) 2010-08-25
CN101038929A (zh) 2007-09-19
JP2007251594A (ja) 2007-09-27
US20070216792A1 (en) 2007-09-20
US7872674B2 (en) 2011-01-18

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