TW200745389A - Method for manufacturing single crystal - Google Patents

Method for manufacturing single crystal

Info

Publication number
TW200745389A
TW200745389A TW095137096A TW95137096A TW200745389A TW 200745389 A TW200745389 A TW 200745389A TW 095137096 A TW095137096 A TW 095137096A TW 95137096 A TW95137096 A TW 95137096A TW 200745389 A TW200745389 A TW 200745389A
Authority
TW
Taiwan
Prior art keywords
boron
single crystal
nitrogen
dopant
silicon
Prior art date
Application number
TW095137096A
Other languages
English (en)
Chinese (zh)
Other versions
TWI322836B (ja
Inventor
Kuraichi Shimomura
Takamitsu Toyotake
Yoshiyuki Suzuki
Makoto Kamogawa
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Publication of TW200745389A publication Critical patent/TW200745389A/zh
Application granted granted Critical
Publication of TWI322836B publication Critical patent/TWI322836B/zh

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
TW095137096A 2005-11-09 2006-10-05 Method for manufacturing single crystal TW200745389A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005325468A JP4699872B2 (ja) 2005-11-09 2005-11-09 単結晶の製造方法

Publications (2)

Publication Number Publication Date
TW200745389A true TW200745389A (en) 2007-12-16
TWI322836B TWI322836B (ja) 2010-04-01

Family

ID=38153443

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137096A TW200745389A (en) 2005-11-09 2006-10-05 Method for manufacturing single crystal

Country Status (2)

Country Link
JP (1) JP4699872B2 (ja)
TW (1) TW200745389A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5136278B2 (ja) * 2008-08-18 2013-02-06 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
JP5272247B2 (ja) * 2009-04-02 2013-08-28 株式会社Ｓｕｍｃｏ Ｃｚ法における多結晶シリコン原料の溶解方法
JP6451333B2 (ja) * 2015-01-14 2019-01-16 株式会社Sumco シリコン単結晶の製造方法
WO2018012654A1 (ko) * 2016-07-14 2018-01-18 포토멕 주식회사 실리콘 반도체 잉곳 제조용 투입장치 및 도핑방법
CN113882016A (zh) * 2021-09-29 2022-01-04 西安奕斯伟材料科技有限公司 氮掺杂p型单晶硅制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3353681B2 (ja) * 1997-12-26 2002-12-03 三菱住友シリコン株式会社 シリコンウエーハ及び結晶育成方法
JP2004175620A (ja) * 2002-11-27 2004-06-24 Shin Etsu Handotai Co Ltd 単結晶の製造方法
JP4273793B2 (ja) * 2003-03-11 2009-06-03 信越半導体株式会社 単結晶の製造方法

Also Published As

Publication number Publication date
JP2007131479A (ja) 2007-05-31
TWI322836B (ja) 2010-04-01
JP4699872B2 (ja) 2011-06-15

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