TW200744206A - Heterojunction bipolar transistor - Google Patents

Heterojunction bipolar transistor

Info

Publication number
TW200744206A
TW200744206A TW095119154A TW95119154A TW200744206A TW 200744206 A TW200744206 A TW 200744206A TW 095119154 A TW095119154 A TW 095119154A TW 95119154 A TW95119154 A TW 95119154A TW 200744206 A TW200744206 A TW 200744206A
Authority
TW
Taiwan
Prior art keywords
layer
collector
sub
base
collector layer
Prior art date
Application number
TW095119154A
Other languages
English (en)
Chinese (zh)
Other versions
TWI310609B (2
Inventor
Wen-Chau Liu
Shiou-Ying Cheng
si-yi Fu
Original Assignee
Univ Nat Cheng Kung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Cheng Kung filed Critical Univ Nat Cheng Kung
Priority to TW095119154A priority Critical patent/TW200744206A/zh
Publication of TW200744206A publication Critical patent/TW200744206A/zh
Application granted granted Critical
Publication of TWI310609B publication Critical patent/TWI310609B/zh

Links

Landscapes

  • Bipolar Transistors (AREA)
TW095119154A 2006-05-30 2006-05-30 Heterojunction bipolar transistor TW200744206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095119154A TW200744206A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095119154A TW200744206A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
TW200744206A true TW200744206A (en) 2007-12-01
TWI310609B TWI310609B (2) 2009-06-01

Family

ID=45072274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119154A TW200744206A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor

Country Status (1)

Country Link
TW (1) TW200744206A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488262B (zh) * 2012-07-10 2015-06-11 華夏光股份有限公司 防止漏電流結構及其製造方法
TWI580037B (zh) * 2015-09-04 2017-04-21 穩懋半導體股份有限公司 異質接面雙極電晶體

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488262B (zh) * 2012-07-10 2015-06-11 華夏光股份有限公司 防止漏電流結構及其製造方法
TWI580037B (zh) * 2015-09-04 2017-04-21 穩懋半導體股份有限公司 異質接面雙極電晶體

Also Published As

Publication number Publication date
TWI310609B (2) 2009-06-01

Similar Documents

Publication Publication Date Title
US10468512B2 (en) Semiconductor device with insulated gate bipolar transistor (IGBT) having multiple resistors
US9082815B2 (en) Semiconductor device having carrier extraction in electric field alleviating layer
US8853827B2 (en) Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contact
WO2010141237A3 (en) High voltage insulated gate bipolar transistors with minority carrier diverter
EP1193767A3 (en) Insulated gate bipolar transistor and method of making the same
EP2001052A3 (en) Semiconductor device and manufacturing method thereof
WO2011008328A3 (en) High breakdown voltage wide band-gap mos-gated bipolar junction transistors with avalanche capability
CN103956379B (zh) 具有优化嵌入原胞结构的cstbt器件
JP2013073992A5 (ja) 集積回路及び回路
CN103094332A (zh) 一种绝缘栅双极晶体管
CN106206705A (zh) 一种具有双栅的rc‑igbt
WO2019085850A1 (zh) Igbt功率器件
CN102244095A (zh) 一种功率半导体器件
US9263560B2 (en) Power semiconductor device having reduced gate-collector capacitance
CN104241351B (zh) 具有体内复合场板结构的氮化镓基异质结场效应管
CN101431096A (zh) 一种soi ligbt器件
TW200721529A (en) Gan heterojunction bipolar transistor with a p-type strained ingan layer and method of fabrication therefore
TW200711057A (en) SOI device with more immunity from substrate voltage
TW200419798A (en) Bipolar transistor having a majority-carrier accumulation layer as subcollector
US9362381B2 (en) Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate and manufacturing method thereof
WO2009088897A3 (en) Integrated low leakage diode
TW200744206A (en) Heterojunction bipolar transistor
CN104282744A (zh) 一种igbt器件结构
JP2013069871A (ja) 半導体装置
CN102263127B (zh) 一种mos型功率器件及其制造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees