TW200744206A - Heterojunction bipolar transistor - Google Patents

Heterojunction bipolar transistor

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Publication number
TW200744206A
TW200744206A TW095119154A TW95119154A TW200744206A TW 200744206 A TW200744206 A TW 200744206A TW 095119154 A TW095119154 A TW 095119154A TW 95119154 A TW95119154 A TW 95119154A TW 200744206 A TW200744206 A TW 200744206A
Authority
TW
Taiwan
Prior art keywords
layer
collector
sub
base
collector layer
Prior art date
Application number
TW095119154A
Other languages
Chinese (zh)
Other versions
TWI310609B (en
Inventor
Wen-Chau Liu
Shiou-Ying Cheng
si-yi Fu
Original Assignee
Univ Nat Cheng Kung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Cheng Kung filed Critical Univ Nat Cheng Kung
Priority to TW095119154A priority Critical patent/TW200744206A/en
Publication of TW200744206A publication Critical patent/TW200744206A/en
Application granted granted Critical
Publication of TWI310609B publication Critical patent/TWI310609B/zh

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  • Bipolar Transistors (AREA)

Abstract

A heterojunction bipolar transistor is disclosed. It comprises, from bottom up: a semiconductor substrate, a buffer layer, a sub-collector layer, a collector layer, a step-like collector layer, a base layer, a back-disposed layer, an emitter layer, and a cap layer. The sub-collector layer has a sub-collector body, and a collector electrode made by metal material and electrically connected to the surface of sub-collector body. The step-like collector layer has plural step layers with reduced band gap, from bottom to top. The step layers between the base layer and collector layer can reduce the potential barrier spike at the base-collector junction, and provide a larger breakdown voltage, larger breakdown electrical field, less impact ionization, smaller output conductance, lower leakage current, and wider range of operation temperatures.
TW095119154A 2006-05-30 2006-05-30 Heterojunction bipolar transistor TW200744206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095119154A TW200744206A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095119154A TW200744206A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
TW200744206A true TW200744206A (en) 2007-12-01
TWI310609B TWI310609B (en) 2009-06-01

Family

ID=45072274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119154A TW200744206A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor

Country Status (1)

Country Link
TW (1) TW200744206A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488262B (en) * 2012-07-10 2015-06-11 華夏光股份有限公司 Leak current preventing structure and a manufacturing method thereof
TWI580037B (en) * 2015-09-04 2017-04-21 穩懋半導體股份有限公司 Heterojunction bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488262B (en) * 2012-07-10 2015-06-11 華夏光股份有限公司 Leak current preventing structure and a manufacturing method thereof
TWI580037B (en) * 2015-09-04 2017-04-21 穩懋半導體股份有限公司 Heterojunction bipolar transistor

Also Published As

Publication number Publication date
TWI310609B (en) 2009-06-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees