TW200744206A - Heterojunction bipolar transistor - Google Patents
Heterojunction bipolar transistorInfo
- Publication number
- TW200744206A TW200744206A TW095119154A TW95119154A TW200744206A TW 200744206 A TW200744206 A TW 200744206A TW 095119154 A TW095119154 A TW 095119154A TW 95119154 A TW95119154 A TW 95119154A TW 200744206 A TW200744206 A TW 200744206A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- collector
- sub
- base
- collector layer
- Prior art date
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
A heterojunction bipolar transistor is disclosed. It comprises, from bottom up: a semiconductor substrate, a buffer layer, a sub-collector layer, a collector layer, a step-like collector layer, a base layer, a back-disposed layer, an emitter layer, and a cap layer. The sub-collector layer has a sub-collector body, and a collector electrode made by metal material and electrically connected to the surface of sub-collector body. The step-like collector layer has plural step layers with reduced band gap, from bottom to top. The step layers between the base layer and collector layer can reduce the potential barrier spike at the base-collector junction, and provide a larger breakdown voltage, larger breakdown electrical field, less impact ionization, smaller output conductance, lower leakage current, and wider range of operation temperatures.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095119154A TW200744206A (en) | 2006-05-30 | 2006-05-30 | Heterojunction bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095119154A TW200744206A (en) | 2006-05-30 | 2006-05-30 | Heterojunction bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200744206A true TW200744206A (en) | 2007-12-01 |
TWI310609B TWI310609B (en) | 2009-06-01 |
Family
ID=45072274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095119154A TW200744206A (en) | 2006-05-30 | 2006-05-30 | Heterojunction bipolar transistor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200744206A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488262B (en) * | 2012-07-10 | 2015-06-11 | 華夏光股份有限公司 | Leak current preventing structure and a manufacturing method thereof |
TWI580037B (en) * | 2015-09-04 | 2017-04-21 | 穩懋半導體股份有限公司 | Heterojunction bipolar transistor |
-
2006
- 2006-05-30 TW TW095119154A patent/TW200744206A/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488262B (en) * | 2012-07-10 | 2015-06-11 | 華夏光股份有限公司 | Leak current preventing structure and a manufacturing method thereof |
TWI580037B (en) * | 2015-09-04 | 2017-04-21 | 穩懋半導體股份有限公司 | Heterojunction bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
TWI310609B (en) | 2009-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |