CN103887332A - Novel power semiconductor device - Google Patents
Novel power semiconductor device Download PDFInfo
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- CN103887332A CN103887332A CN201310491304.8A CN201310491304A CN103887332A CN 103887332 A CN103887332 A CN 103887332A CN 201310491304 A CN201310491304 A CN 201310491304A CN 103887332 A CN103887332 A CN 103887332A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000000694 effects Effects 0.000 claims abstract description 5
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 210000000746 body region Anatomy 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 208000035541 Device inversion Diseases 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention relates to a semiconductor device, and discloses a novel power semiconductor device comprising a substrate (1), an anode P+ region (5), an anode N+ region (4), anode metal (12), an N-type drift region (3), a field oxide layer (16), a cathode P+ region (8), a cathode P-type body region (7), a P-type channel region (6), an emitting electrode N+ region (9), cathode metal (11), a poly-silicon gate (14), a gate oxide layer (10), poly-silicon gate metal (13) and P-type cylinder regions (17,18). The two P-type cylinder regions (17, 18) are additionally arranged in the P-type channel region (6) and the anode P+ region (5), and the structure that the anode P+ region (5) and the anode N+ region (4) are arranged in an alternating way is adopted so that the inverse resistance effect of the device is inhibited, the latch-up effect of the device in the high-current working state is overcome, turn-off speed and voltage resistance of the device are enhanced and power consumption of the device is reduced.
Description
Technical field
The present invention relates to semiconductor power device technology.
Background technology
Landscape insulation bar double-pole-type transistor LIGBT (Lateral Insulated-Gate Bipolar Transistor) is due to its low conduction voltage drop and the feature of high input impedance, be usually used in the output stage of high-voltage power drive integrated circult, to improve the contradiction between the withstand voltage and conducting resistance of lateral double diffusion metal oxide semiconductor field-effect transistor LDMOS (Lateral Double-diffused MOSFET).
Fig. 1 has provided traditional n raceway groove LIGBT device architecture figure, and wherein, 1 is P type or N-type substrate, and 2 is oxygen buried layer, 3 is N-type drift region, and 4 is the N-type resilient coating identical with N-type drift region 3 doping types, and 5 is anode P+ district, 6 is device P type channel region, and 7 is the p type island region that concentration is high compared with P type channel region 6, and 8 is P
+district, 9 is N
+emitter region, 10 is component grid oxidizing layer, and 11 is cathodic metal, and 12 is anode metal, and 13 is polysilicon gate metal, and 14 is polysilicon gate, and 15 is before-metal medium layer, and 16 is field oxide.
Compared with LDMOS, LIGBT has by anode P
+district, N-type resilient coating, N-type drift region, P type channel region and N
+, easily there is latch-up in the parasitic thyristor structure that district forms, causes LIGBT to lose grid control ability, component failure when large current work.
In order to make LIGBT can reach higher operating frequency, anode in short circuit type structure is the method for comparatively conventional optimization turn-off time a kind of.Fig. 2 has provided anode in short circuit LIGBT structure (SA-LIGBT), and wherein, 1 is P type or N-type substrate, and 2 is oxygen buried layer, and 3 is N-type drift region, and 4 is the N-type resilient coating identical with N-type drift region 3 doping types, and 5 is anode P
+district, 17 are and anode P
+the N that district 5 is connected
+district, 6 is device P type channel region, and 7 is the p type island region that concentration is high compared with P type channel region 6, and 8 is P
+district, 9 is N
+emitter region, 10 is component grid oxidizing layer, and 11 is cathodic metal, and 12 is anode metal, and 13 is polysilicon gate metal, and 14 is polysilicon gate, and 15 is before-metal medium layer, and 16 is field oxide.
Anode in short circuit LIGBT (SA-LIGBT) device has switching speed faster than traditional LIGBT device, this be due to it when the device shutoff work for electronics provides a path, electronics is detached quickly, has reduced the turn-off time of device.But SA-LIGBT but exists negative resistance phenomenon NDR (Negative Differential Resistance), this is that the unexpected conversion of device between LDMOS and two mode of operations of LIGBT causes.
Given this, need a kind of high-voltage high-speed LIGBT device that can high-speed switch work can avoid again NDR phenomenon and latch-up.
Summary of the invention
Technical problem to be solved by this invention is, a kind of Novel power semiconductor is provided, and avoids anode in short circuit structure LIGBT to occur negative resistance phenomenon, suppression device latch-up, realize the lifting of switching speed and device withstand voltage.
The technical scheme that technical problem of the present invention adopts is, a kind of Novel power semiconductor, comprises substrate (1), anode P+ district (5), anode N+ district (4), anode metal (12), N-type drift region (3), field oxide (16), negative electrode P+ district (8), negative electrode P type tagma (7), P type channel region (6), emitter N+ district (9), cathodic metal (11), polysilicon gate (14), LIGBT component grid oxidizing layer (10), polysilicon gate metal (13) and P type cylinder district (17,18).
Cathodic metal (12) and negative electrode P
+district (8) and emitter N
+district (9) is connected; Anode P
+district (5) and anode N
+district (4) alternative arrangement is also closely connected, and shares an anode metal (12), has formed anode in short circuit structure; P-body place connects one section of P type cylinder, every anode P
+below region be also connected one section of P type cylinder, spacing, width, the degree of depth and the number of these P type cylinders can regulate according to the performance characteristics of device.
The invention has the beneficial effects as follows:
In the time that device is just opened, with the anode N of P type cylinder
+p
+the quick SOI LIGBT device inversion channel of overlapping short circuit forms, and in the time that anode applies positive voltage, the electronic current in inversion channel is injected in drift region (3), and by anode N
+district (4) extracts, and now device is operated in LDMOS state, does not have electricity to lead modulation phenomenon;
In the time of break-over of device, the resistance between P type cylinder (4) is enough large, makes just can reach the voltage difference of 0.7V in minimum electric current, makes anode P
+and P type cylinder (18) and N (5)
-drift region (3) forms positively biased.Anode P
+(5) and P type cylinder (18) to N-drift region (3) injected hole, form conductivity modulation effect, the mode of operation that makes device just enter LIGBT at very little electric current, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon; The existence of P type cylinder (18) has compensated due to the higher phenomenon of inadequate the caused forward voltage drop of carrier lifetime, and this is because it is to N
-constantly injected hole of drift region (3);
In the time that device turn-offs, hole not only can compoundly disappear, and can lean on P type cylinder (17) structure to collect, and the extraction that this has accelerated hole, has improved the turn-off speed of device.Under the large current work state of device, when device turn-offs, hole is directly extracted by P type cylinder (17), thereby the electric current in P type tagma (7) is just enough little, emitter N
+(9) the PN junction voltage and between P type tagma (7) just can not reach the positively biased requirement of 0.7V, and parasitic NPN transistor just can not be switched on, and has avoided latch-up.
Under the blocking-up operating state of device, two P type cylinders (17,18) are assisted depletion N simultaneously
-drift region (3), is improved the withstand voltage of device.
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated.
Accompanying drawing explanation
Fig. 1 is conventional n raceway groove LIGBT device architecture figure
Fig. 2 is conventional n raceway groove anode in short circuit LIGBT device (SA-LIGBT) structure chart
Fig. 3 is a kind of anode N with P type cylinder of the embodiment of the present invention 1
+p
+the positive plan structure schematic diagram of the quick SOI LIGBT device of overlapping short circuit
Fig. 4 is a kind of anode N with P type cylinder of the embodiment of the present invention 2
+p
+the quick SOI LIGBT device of overlapping short circuit along anode N
+the profile that place, district (4) is done.
Fig. 5 is a kind of anode N with P type cylinder of the embodiment of the present invention 3
+p
+the quick SOI LIGBT device of overlapping short circuit along anode P
+the profile that place, district (5) is done.
Embodiment
The positive plan structure figure that Figure 3 shows that a kind of Novel power semiconductor, comprises anode P
+district (5), anode N
+district (4), N-type drift region (3), emitter N
+district (9), P type channel region (6) and P type cylinder district (17,18).
The anode of structure of the present invention adopts N
+district (4) and P
+the overlapping short-circuit structure in district (5), has two parts P type cylinder district (17,18) in drift region, they respectively with the P type channel region (6) of negative electrode and the P of anode
+district (5) is connected.By the adjusting of these structures, NDR phenomenon no longer occurs, and latch-up when large current work has obtained effective inhibition, and switching speed improves greatly, and the withstand voltage of device is also improved to a certain extent.
Figure 4 shows that a kind of Novel power semiconductor along anode N
+the profile that place, district is done.Comprise substrate (1), anode N
+district (4), anode metal (12), N-type drift region (3), field oxide (16), negative electrode P
+district (8), negative electrode P type tagma (7), P type channel region (6), emitter N
+district (9), cathodic metal (11), polysilicon gate (14), LIGBT component grid oxidizing layer (10) and polysilicon gate metal (13).
In the time that device is just opened, with the anode N of P type cylinder
+p
+the quick SOI LIGBT device inversion channel of overlapping short circuit forms.In the time that anode applies positive voltage, the electronic current in inversion channel is injected in drift region (3), and by anode N
+district (4) extracts, and now device is operated in LDMOS state, does not have electricity to lead modulation phenomenon.
Figure 5 shows that a kind of Novel power semiconductor is along anode P
+the profile that place, district is done.Comprise substrate (1), anode P
+district (5), anode metal (12), N-type drift region (3), field oxide (16), negative electrode P
+district (8), negative electrode P type tagma (7), P type channel region (6), emitter N
+district (9), cathodic metal (11), polysilicon gate (14), LIGBT component grid oxidizing layer (10), polysilicon gate metal (13) and P type cylinder district (17,18).
The difference of Fig. 5 and Fig. 4 is, it than Fig. 4 many two parts P type cylinder district (17,18), its anode N
+district (4) is by anode P
+district (5) substitutes.
For the NDR phenomenon that makes anode in short circuit structure no longer occurs, it is enough large that the resistance between P type cylinder (4) is wanted, and makes just can reach the voltage difference of 0.7V in minimum electric current, thereby make anode P
+(5) and P type cylinder (18) and N-drift region (3) form positively biased.Anode P
+(5) and P type cylinder (18) to N-drift region (3) injected hole, form conductivity modulation effect, the mode of operation that makes device just enter LIGBT at very little electric current, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon.
Between P type cylinder (18), the increase of resistance can realize by the spacing and the length that regulate each P type cylinder (18).P type cylinder (18) is to N
-constantly injected hole of drift region (3), has compensated due to the higher phenomenon of inadequate the caused forward voltage drop of carrier lifetime.
In the time that device turn-offs, hole not only can compoundly disappear, and can lean on P type cylinder (17) structure to collect, and the extraction that this has accelerated hole, has improved the turn-off speed of device.Under the large current work state of device, when device turn-offs, hole is directly extracted by P type cylinder (17), and need not pass through P type tagma (7), makes the electric current in P type tagma (7) enough little.Emitter N
+(9) the PN junction voltage and between P type tagma (7) does not reach the positively biased requirement of 0.7V, and parasitic NPN transistor just can not be opened, and has avoided the appearance of latch-up.
Under the blocking state of device, two P type cylinders (17,18) are assisted depletion N simultaneously
-drift region (3), has improved the withstand voltage of device.
Claims (7)
1. a Novel power semiconductor, comprises substrate (1), anode P
+district (5), anode N
+district (4), anode metal (12), N-type drift region (3), field oxide (16), negative electrode P
+district (8), negative electrode P type tagma (7), P type channel region (6), emitter N
+district (9), cathodic metal (11), polysilicon gate (14), gate oxide (10), polysilicon gate metal (13) and P type cylinder district (17,18) anode metals (12) and anode P
+district (5) and anode N
+district (4) connects, and it is characterized in that anode P
+district (5) and anode N
+the overlapping short circuit in district (4) is arranged.
2. a kind of novel power semiconductor as claimed in claim 1, is applicable to some possible semiconductor device such as carborundum (SiC) power device, Si power device, it is characterized in that anode P
+district (5) and anode N
+quantity, width, length and the degree of depth in district (4) can be adjusted according to device actual characteristic.
3. a kind of Novel power semiconductor as claimed in claim 1, is characterized in that, P type cylinder (18) and anode P
+district is connected, the spacing between each P type cylinder (18) and anode N
+the width in district is identical.
4. Novel power semiconductor as claimed in claim 1, is characterized in that, P type cylinder (17) is connected with P type channel region (6) short circuit, contacts with field oxide.
5. a kind of Novel power semiconductor as claimed in claim 1, it is characterized in that, the locations of structures symmetry of P type cylinder (17) and P type cylinder (18), width is identical, and the spacing of each P type cylinder (17) is also identical with the spacing of each P type cylinder (18).
6. a kind of Novel power semiconductor as claimed in claim 1, is characterized in that, length, concentration and the degree of depth of P type cylinder (17) can be adjusted according to device actual characteristic.
7. a kind of Novel power semiconductor as claimed in claim 1, is characterized in that, P type cylinder (17) is not connected with P type cylinder (18), for device provides an effective coverage that conductivity modulation effect occurs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310491304.8A CN103887332A (en) | 2013-10-15 | 2013-10-15 | Novel power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310491304.8A CN103887332A (en) | 2013-10-15 | 2013-10-15 | Novel power semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN103887332A true CN103887332A (en) | 2014-06-25 |
Family
ID=50956153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310491304.8A Pending CN103887332A (en) | 2013-10-15 | 2013-10-15 | Novel power semiconductor device |
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| Country | Link |
|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795438A (en) * | 2015-04-10 | 2015-07-22 | 电子科技大学 | SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) capable of restraining snapback effect |
| CN105226088A (en) * | 2015-09-08 | 2016-01-06 | 浙江大学 | A kind of supper-fast high pressure SOI LIGBT device with P type cylinder |
| CN110534512A (en) * | 2019-09-07 | 2019-12-03 | 电子科技大学 | A kind of anti-latch domain structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1231066A (en) * | 1996-07-26 | 1999-10-06 | 艾利森电话股份有限公司 | Semiconductor component with linear current-to-voltage characteristics |
| US20040051141A1 (en) * | 2002-06-26 | 2004-03-18 | Cambridge Semiconductor Limited | Lateral semiconductor device |
| US20080012043A1 (en) * | 2006-07-14 | 2008-01-17 | Cambridge Semiconductor Limited | Semiconductor device and method of operating a semiconductor device |
| CN102169890A (en) * | 2011-05-03 | 2011-08-31 | 浙江大学 | Isolation structure for high-voltage power integrated circuit |
-
2013
- 2013-10-15 CN CN201310491304.8A patent/CN103887332A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1231066A (en) * | 1996-07-26 | 1999-10-06 | 艾利森电话股份有限公司 | Semiconductor component with linear current-to-voltage characteristics |
| US20040051141A1 (en) * | 2002-06-26 | 2004-03-18 | Cambridge Semiconductor Limited | Lateral semiconductor device |
| US20080012043A1 (en) * | 2006-07-14 | 2008-01-17 | Cambridge Semiconductor Limited | Semiconductor device and method of operating a semiconductor device |
| CN102169890A (en) * | 2011-05-03 | 2011-08-31 | 浙江大学 | Isolation structure for high-voltage power integrated circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795438A (en) * | 2015-04-10 | 2015-07-22 | 电子科技大学 | SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) capable of restraining snapback effect |
| CN104795438B (en) * | 2015-04-10 | 2017-07-28 | 电子科技大学 | It is a kind of to suppress the SA LIGBT of negative resistance effect |
| CN105226088A (en) * | 2015-09-08 | 2016-01-06 | 浙江大学 | A kind of supper-fast high pressure SOI LIGBT device with P type cylinder |
| CN110534512A (en) * | 2019-09-07 | 2019-12-03 | 电子科技大学 | A kind of anti-latch domain structure |
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Application publication date: 20140625 |
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