CN104795438B - It is a kind of to suppress the SA LIGBT of negative resistance effect - Google Patents
It is a kind of to suppress the SA LIGBT of negative resistance effect Download PDFInfo
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- CN104795438B CN104795438B CN201510170874.6A CN201510170874A CN104795438B CN 104795438 B CN104795438 B CN 104795438B CN 201510170874 A CN201510170874 A CN 201510170874A CN 104795438 B CN104795438 B CN 104795438B
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- 230000000694 effects Effects 0.000 title claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000001629 suppression Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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Abstract
It is more particularly to a kind of to suppress the SA LIGBT of negative resistance effect the present invention relates to power semiconductor technologies.The present invention main method be：The metallic resistance of an appropriate resistance is produced between the electrode contact of p-type collecting zone and N-type collecting zone, and the resistance of metallic resistance can be controlled by adjusting the area and length of metallic resistance.In device forward conduction, electric current IFFlow through this metallic resistance R and voltage drop I is produced on metallic resistanceFR, makes to produce voltage difference between p-type collecting zone/N-type cushion, if IFR is more than PN junction forward conduction voltage drop, and PN junction is by forward conduction, into IGBT mode of operations, so as to effectively suppress negative resistance effect.Beneficial effects of the present invention are, not excessively under conditions of increase process complexity, the ability with excellent suppression snapback phenomenons, meanwhile, SA LIGBT other performance parameter will not be impacted.
Description
Technical field
It is more particularly to a kind of to suppress the SA-LIGBT of negative resistance effect the present invention relates to power semiconductor technologies
(Shorted-Anode Lateral Insulated Gate Bipolar Transistor, short-circuit anode insulation grid is ambipolar
Transistor).
Background technology
Landscape insulation bar double-pole-type transistor (LIGBT) is the novel features in power integrated circuit.It is existing
LDMOSFET is easy to driving, controls simple advantage, has power transistor turns pressure drop low again, and on state current is big, is lost small
Advantage, it has also become one of core component of modern power semiconductor integrated circuit.Document (Shigeki T., Akio N.,
Youichi A., Satoshi S.and Norihito T.Carrier-Storage Effect and Extraction-
Enhanced Lateral IGBT(E2LIGBT):A Super-High Speed and Low On-state Voltage
LIGBT Superior to LDMOSFET.Proceedings of 2012International Symposium on
Power Semiconductor Devices＆ICs, 2012, pp.393-396) point out, under same current ability, needed for LIGBT
Area is only 1/8th of traditional LDMOS, and the characteristic significantly reduces the area of power chip, improves chip yield,
Reduce production cost.Thus, it is currently based on LIGBT power semiconductor integrated circuits and is widely used in such as communication, energy
The every field of the national economy such as source, traffic, industry, medical science, household electrical appliance and Aero-Space.
But LIGBT is an one way conducting device, in IC system, LIGBT devices usually require to coordinate
Fly-wheel diode (Free Wheeling Diode) is used to ensure that the safety and stability of system.Therefore in the integrated electricity of conventional power
Lu Zhong, it will usually by FWD and LIGBT reverse parallel connections, however, the FWD not only occupies chip area, adds cost, additionally
Required metal line increases the ghost effect of chip internal line.In order to solve this problem, a kind of reverse-conducting of being capable of
LIGBT is referred to as SA-LIGBT (Shorted-Anode Lateral Insulated Gate Bipolar Transistor) quilt
Propose, this traditional SA-LIGBT (as shown in Figure 1) realizes LIGBT by introducing the method for N collector region in collecting zone
It is integrated with diode.But a negative resistance effect occurs in this traditional SA-LIGBT when forward conduction
(snapback), this effect can prevent SA-LIGBT's fully on, and the reliability and stability to device bring adverse effect.
In order to suppress negative resistance effect, Byeong-Hoon Lee et al. propose GHI-LIGBT (Gradual Hole Injection
Dule-gate LIGBT), as shown in Fig. 2 SA-LIGBT relatively conventional GHI-LIGBT, introduces second beside N collector region
P is formed by ion implanting between grid, and oxygen on the scene and second grid+Layer, in device forward conduction, first grid adds just
Bias, second grid adds back bias voltage, and N+ emitter stages and P+ colelctor electrodes distinguish launching electronics and hole simultaneously, and P+ layers can be with auxiliary
The emission effciency in enhancing hole is helped, GHI-LIGBT is worked in bipolarity conduction mode, so that suppress negative resistance effect, but this
Plant structure and belong to four-terminal device, it is inconvenient in actual applications.While suppressing negative resistance effect to realize, it is ensured that device is still
Three terminal device, Juhyun Oh et al. propose the SA-LIGBT with groove collecting zone, as shown in figure 3, relatively conventional SA-
LIGBT, this structure increases the N-type cushion below the p-type collecting zone that electronic current flows through by the groove structure of collecting zone
Resistance, P collector region/N-type cushion knot is easier conducting, so as to inhibit negative resistance effect, but this structure is in technique
On need grooving, filled media layer etc., process complexity is relatively large, and difficulty is brought to actual production.
The content of the invention
The purpose of the present invention, the problem of there is negative resistance effect aiming at above-mentioned traditional SA-LIGBT proposes that one kind can press down
The SA-LIGBT of negative resistance effect processed.
Technical scheme：A kind of to suppress the SA-LIGBT of negative resistance effect, its structure includes P type substrate 7 and set
The N well regions 6 on the upper strata of P type substrate 7 are put, the side on the upper strata of N well regions 6 is provided with PXing Ti areas 5, and its opposite side is provided with N-type
Cushion 8；The upper strata in the PXing Ti areas 5 is provided with separate N+ source regions 1 and P+ contact zones 13；The N-type cushion 8
Upper strata is provided with separate P collector region 9 and N collector region 10；The N+ source regions 1 are adjacent with P collector region 9；The N+ source regions 1
The upper surface of P+ contact zones 13 is provided with cathode electrode 4, N+ source regions 1, P+ contact zones 13, the p-type of the both sides of cathode electrode 4
Body area 5, N well regions 6, P type substrate 7, the upper surface of cushion 8 and P collector region 9 are provided with silicon dioxide layer 3, the silica
In layer 3 polygate electrodes 2 are provided with N+ source regions 1；The upper surface of the P collector region 9 is provided with the first metal layer 11,
As anode electrode, the first metal layer 11 is connected with silicon dioxide layer 3 and part covers the upper surface of silicon dioxide layer 3；
The upper surface of N collector region 10 is provided with second metal layer 15；Have between the first metal layer 11 and second metal layer 15
The insulating barrier 17 of metallic resistance 16 and first；First insulating barrier 17 is located at the upper surface of P collector region 9 and N collector region 10, thereon
Surface is connected with the lower surface of metallic resistance 16；The upper surface of the metallic resistance 16 and the N collector region 10 adjacent with its side,
The upper surface of N-type cushion 8, N well regions 6 and P type substrate 7 is provided with the second insulating barrier 18.
The total technical scheme of the present invention, on the basis of traditional SA-LIGBT, by the lithography to anode metal electrodes,
The metallic resistance of one appropriate resistance of generation between the electrode contact of p-type collecting zone and N-type collecting zone, and metallic resistance
Resistance can be controlled by adjusting the area and length of metallic resistance.(anode adds high pressure), electric current in device forward conduction
IFFlow through this metallic resistance R and voltage drop I is produced on metallic resistanceFR, makes to produce voltage between p-type collecting zone/N-type cushion
Difference, if IFR is more than PN junction forward conduction voltage drop (about 0.7V), and PN junction is by forward conduction, into IGBT mode of operations, so as to have
Effect suppresses negative resistance effect.
Beneficial effects of the present invention are, not excessively under conditions of increase process complexity, with excellent suppression
The ability of snapback phenomenons, meanwhile, SA-LIGBT other performance parameter will not be impacted.
Brief description of the drawings
Fig. 1 is traditional SA-LIGBT structural representations；
Fig. 2 is GHI-LIGBT structural representations；
Fig. 3 is the structural representation of the SA-LIGBT with groove collecting zone；
Fig. 4 is the SA-LIGBT device architecture schematic diagrames of the present invention；
Fig. 5 is the device profile schematic diagram of the AA' along along Fig. 4；
Fig. 6 is the SA-LIGBT device collecting zone top views of the present invention；
Fig. 7 is the SA-LIGBT and tradition SA-LIGBT of present invention snapback phenomenon contrast schematic diagrams；
During Fig. 8 is SA-LIGBT structures proposed by the present invention, influence of the metallic resistance 16 to snapback effects；
Fig. 9 be the present invention SA-LIGBT device making technics in N+ and P+ colelctor electrode implantation annealings, and in device table
Device architecture schematic diagram after face deposit layer of silicon dioxide layer；
Figure 10 be the present invention SA-LIGBT device making technics in by photoetching and etching expose N+ and P+ colelctor electrodes
Contact zone, then metal is deposited, by photoetching and etching, formed between N+ colelctor electrodes and P+ collector contacts after metallic resistance
Structural representation；
Figure 11 be the present invention SA-LIGBT device making technics in complete device anode contact after structural representation.
Embodiment
The present invention is described in detail below in conjunction with the accompanying drawings
It is proposed by the present invention it is a kind of eliminate negative resistance effect SA-LIGBT new constructions, be on the basis of traditional SA-LIGBT,
By the lithography to anode metal, an appropriate resistance is produced between the electrode contact of p-type collecting zone and N-type collecting zone
Metallic resistance.In device forward conduction (anode adds high pressure), electric current flows through this metallic resistance and voltage drop is produced thereon,
Make to produce voltage difference between p-type collecting zone/N-type cushion knot, so that PN junction forward conduction, it is therefore prevented that the MOS of device inside
It is partially ON and negative resistance phenomenon occur partly prior to IGBT.It is worth noting that：Profit in this way, without increasing cellular face
It can be very good to suppress snapback phenomenons under conditions of product；In addition, compared to above-mentioned utilization groove collecting zone SA-
The techniques such as grooving, filling required for LIGBT suppression snapback phenomenons, this method only need to be on traditional SA-LIGBT basis
Upper increase by one step etching anode metal technique, metallic resistance is located between SA-LIGBT backs p-type collecting zone and N collector region, can
The metal contact zone of larger area is formed with centre position overleaf, as shown in Figure 5, Figure 6, to produce appropriate resistance
The metallic resistance of jointed anode electrode and N-type collecting zone, reduces process complexity.
As shown in figure 4, the SA-LIGBT of the present invention, its structure includes P type substrate 7 and is arranged on the N on the upper strata of P type substrate 7
Well region 6, the side on the upper strata of N well regions 6 is provided with PXing Ti areas 5, and its opposite side is provided with N-type cushion 8；The PXing Ti areas
5 upper strata is provided with separate N+ source regions 1 and P+ contact zones 13；The upper strata of N-type cushion 8 is provided with separate
P collector region 9 and N collector region 10；The N+ source regions 1 are adjacent with P collector region 9；The upper surface of the N+ source regions 1 and P+ contact zones 13
It is provided with cathode electrode 4, N+ source regions 1, P+ contact zones 13, PXing Ti areas 5, N well regions 6, the P type substrate of the both sides of cathode electrode 4
7th, the upper surface of cushion 8 and P collector region 9 is provided with silicon dioxide layer 3, the silicon dioxide layer 3 sets at N+ source regions 1
It is equipped with polygate electrodes 2；The upper surface of the P collector region 9 is provided with the first metal layer 11, as anode electrode, and described
One metal level 11 is connected with silicon dioxide layer 3 and part covers the upper surface of silicon dioxide layer 3；The upper surface of N collector region 10
It is provided with second metal layer 15；There is the insulating barrier of metallic resistance 16 and first between the first layer 11 and second metal layer 15
17；First insulating barrier 17 is located at the upper surface of P collector region 9 and N collector region 10, its upper surface and the following table of metallic resistance 16
Face is connected；The upper surface of the metallic resistance 16 and N collector region 10 adjacent thereto, N-type cushion 8, N well regions 6 and P type substrate
7 upper surface is provided with the second insulating barrier 18.
The present invention operation principle be：
The reason for conventional SA-LIGBT produces snapback phenomenons be：Due to introducing the short circuit of N+ colelctor electrodes in anode side
Area, has additionally introduced a monopolar current path, when LIGBT grid adds the positive bias more than threshold value, in collector voltage
During very little, electronic current can reach emitter electrode by conducting channel again via N+ colelctor electrode shorting regions by N well regions,
Because N well regions doping concentration is very low and length is longer in this current path, conducting resistance is larger, thus conducting electric current very little,
At this moment SA-LIGBT work can be described as MOSFET work mode.As collector voltage increases so that P+ colelctor electrodes and N bufferings
During the PN junction positively biased that layer is formed, P+ collecting zones start to inject hole to N well regions, and device is transferred to IGBT Working moulds from MOSFET patterns
Due to there is conductivity modulation effect under formula, the pattern, conducting resistance declines rapidly, thus occurs in that negative resistance phenomenon.
SA-LIGBT new constructions proposed by the present invention, its principle for eliminating snapback is to suppress routine SA-LIGBT
MOSFET work mode, accelerates to enter the process of IGBT mode of operations.On the basis of traditional SA-LIGBT, by anode metal
The lithography of electrode, produces the metallic resistance of an appropriate resistance between the electrode contact of p-type collecting zone and N-type collecting zone
16, and the resistance of metallic resistance 16 can control by adjusting the area and length of metallic resistance.In device forward conduction
When (anode adds high pressure), electric current IFFlow through this metallic resistance R and voltage drop I is produced on metallic resistanceFR, makes p-type collecting zone/N
Voltage difference is produced between type cushion, if IFR is more than PN junction forward conduction voltage drop (about 0.7V), and PN junction enters forward conduction
Enter IGBT mode of operations.As can be seen here, the resistance of metallic resistance is bigger, and the inhibition to snapback phenomenons is better；But,
Metallic resistance is excessive, can cause device power consumption increase in inversely conducting (diode mode), therefore the resistance of metallic resistance is needed
By appropriate design.
Using new approaches proposed by the present invention, it can be very good to suppress negative resistance effect under conditions of without increase cell density
Should, in addition, compared to works such as grooving, the fillings required for above-mentioned groove collecting zone SA-LIGBT suppression snapback phenomenons
Skill, this method only need to etch anode metal on the basis of traditional SA-LIGBT, to produce the connection sun of an appropriate resistance
Pole and the metallic resistance of N-type collecting zone electrode contact, greatly reduce process complexity.
In order to verify beneficial effects of the present invention, SA-LIGBT of the MEDICI softwares to the traditional structure shown in Fig. 1 is utilized
Emulation is carried out with the SA-LIGBT new constructions proposed by the present invention shown in Fig. 4 to compare, emulation major parameter is：Device length is
57 μm, N well regions are doped to 5 × 1014cm-3, N-type undoped buffer layer is 2 × 1016cm-3, Lp：Ln (P collector region length：N collector region
Length)=2:1, carrier lifetime is 10us, and environment temperature is 300K.Traditional structure and SA-LIGBT proposed by the present invention are newly tied
Structure is respectively provided with above simulation parameter, in addition, this SA-LIGBT new construction, its metallic resistance is 50 Ω.Simulation result such as Fig. 7 institutes
Show, as can be seen from the figure the SA-LIGBT of traditional structure due to device length it is smaller (only 57 μm), snapback phenomenons are non-
Chang Mingxian, this can prevent SA-LIGBT's fully on, and the reliability to SA-LIGBT is also adversely affected.And the present invention is carried
The SA-LIGBT (metallic resistance is 50 Ω) with metallic resistance gone out, snapback phenomenons are substantially completely eliminated.It is right by this
Than it can be found that a kind of utilization metallic resistance proposed by the present invention eliminates the SA-LIGBT of snapback phenomenons with very superior
Performance.Just it can be formed simultaneously as this metallic resistance need to only be performed etching to SA-LIGBT anode metal, without changer
The other structures of part, so, the parameters such as SA-LIGBT pressure-resistant and threshold voltage will not be impacted.
In order to verify that the resistance of metallic resistance sets the influence to snapback phenomenons, device is simulated under different resistances
Opening process.As shown in figure 8, when metallic resistance gradually increases, electronic current flow through the pressure drop of metallic resistance generation also with
Increase, p-type collecting zone/N-type cushion knot is easier conducting, and SA-LIGBT will be easier to enter double from unipolarity electronic conduction
Polarity conductivity pattern, so as to suppress snapback phenomenons.When resistance increases to 50 Ω, snapback phenomenons have been substantially eliminated,
Simultaneously in view of not increasing power consumption during SA-LIGBT reverse operations, the selection Ω of metallic resistance 50 is used as optimal resistance.
The SA-LIGBT concrete methods of realizing of the present invention is：Choose p-type<100>Crystal orientation zone melting single-crystal is padded, the injection of N traps
And knot, field oxidation, active area is etched, long grid oxygen deposits Poly, P-body injection, the injection of N-type cushion, N+ active areas
Injection, the injection of P+ ohmic contact regions, p-type collecting zone and the injection of N-type collecting zone, deposit layer of silicon dioxide layer, as shown in figure 9,
Expose the contact zone of N+ and P+ colelctor electrodes by photoetching and etching, deposit layer of metal in collecting zone, realize metal and N+ and P+
The good contact of colelctor electrode, as shown in Figure 10.By photoetching and etching, gold is formed between N+ colelctor electrodes and P+ collector contacts
Belong to resistance, layer of silicon dioxide layer is deposited again in collecting zone, exposing P+ collecting zones by photoetching and etching contacts, and is used as device
Positive contact.BPSG is deposited, punches and deposits emitter and collector metal, emitter and collector metal exposure and etching,
As shown in figure 11.
During implementation, according to the design requirement of specific device, a kind of snapback that eliminates proposed by the present invention shows
The SA-LIGBT of elephant, its MOS area and N well regions are variable, can be used for planar gate structure and slot grid structure, can also use superjunction
Structure.In specific make, collecting zone metallic resistance can be saw-tooth like resistance or square waveform resistance.
Claims (2)
1. a kind of can suppress the SA-LIGBT of negative resistance effect, its structure includes P type substrate (7) and is arranged on P type substrate (7) upper strata
N well regions (6), the side on N well regions (6) upper strata is provided with PXing Ti areas (5), and its opposite side is provided with N-type cushion (8)；
The upper strata of the PXing Ti areas (5) is provided with separate N+ source regions (1) and P+ contact zones (13)；The N-type cushion (8)
Upper strata be provided with separate P collector region (9) and N collector region (10)；The N+ source regions (1) are adjacent with P collector region (9)；
The upper surface of the N+ source regions (1) and P+ contact zones (13) is provided with cathode electrode (4), the N+ of cathode electrode (4) both sides
Source region (1), P+ contact zones (13), PXing Ti areas (5), N well regions (6), P type substrate (7), cushion (8) and P collector region (9) it is upper
Surface is provided with silicon dioxide layer (3), the silicon dioxide layer (3) is provided with polygate electrodes close to N+ source region (1) place
(2)；The upper surface of the P collector region (9) is provided with the first metal layer (11) as anode electrode, the first metal layer (11)
It is connected and partly covers the upper surface of silicon dioxide layer (3) with silicon dioxide layer (3)；N collector region (10) upper surface is set
There is second metal layer (15)；There is metallic resistance (16) and first between the first metal layer (11) and second metal layer (15)
Insulating barrier (17)；First insulating barrier (17) is located at the upper surface of P collector region (9) and N collector region (10), its upper surface and gold
Belong to the lower surface connection of resistance (16)；The upper surface of the metallic resistance (16) and the N collector region (10) adjacent with its side, N
The upper surface of type cushion (8), N well regions (6) and P type substrate (7) is provided with the second insulating barrier (18).
A kind of it can suppress the SA-LIGBT of negative resistance effect 2. according to claim 1, it is characterised in that the metallic resistance
(16) resistance is 50 Ω.
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| CN201510170874.6A CN104795438B (en) | 2015-04-10 | 2015-04-10 | It is a kind of to suppress the SA LIGBT of negative resistance effect |
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| CN105185826B (en) * | 2015-08-10 | 2019-01-22 | 电子科技大学 | A kind of transverse direction RC-IGBT device |
| CN106298900A (en) * | 2016-10-09 | 2017-01-04 | 电子科技大学 | A kind of high speed SOI LIGBT |
| CN109065608B (en) * | 2018-08-20 | 2020-12-18 | 电子科技大学 | Transverse bipolar power semiconductor device and preparation method thereof |
| CN112466935B (en) * | 2020-12-15 | 2023-03-14 | 重庆邮电大学 | RC-IGBT device with polycrystalline silicon electronic channel of collector electrode |
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| CN103413824A (en) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | RC-LIGBT device and manufacturing method thereof |
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| US5886384A (en) * | 1996-07-26 | 1999-03-23 | Telefonakitebolaget Lm Ericsson | Semiconductor component with linear current to voltage characteristics |
| CN103579230A (en) * | 2012-07-26 | 2014-02-12 | 无锡维赛半导体有限公司 | Semiconductor power device |
| CN103383958A (en) * | 2013-07-17 | 2013-11-06 | 电子科技大学 | Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof |
| CN103413824A (en) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | RC-LIGBT device and manufacturing method thereof |
| CN103887332A (en) * | 2013-10-15 | 2014-06-25 | 杭州恩能科技有限公司 | Novel power semiconductor device |
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