TW200742404A - Method and apparatus for providing a rolling double reset timing for global storage in image sensors - Google Patents

Method and apparatus for providing a rolling double reset timing for global storage in image sensors

Info

Publication number
TW200742404A
TW200742404A TW096110170A TW96110170A TW200742404A TW 200742404 A TW200742404 A TW 200742404A TW 096110170 A TW096110170 A TW 096110170A TW 96110170 A TW96110170 A TW 96110170A TW 200742404 A TW200742404 A TW 200742404A
Authority
TW
Taiwan
Prior art keywords
pixels
floating diffusion
rolling double
providing
image sensors
Prior art date
Application number
TW096110170A
Other languages
English (en)
Inventor
Chen Xu
Parker Altice
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200742404A publication Critical patent/TW200742404A/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW096110170A 2006-03-23 2007-03-23 Method and apparatus for providing a rolling double reset timing for global storage in image sensors TW200742404A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/386,678 US7427736B2 (en) 2006-03-23 2006-03-23 Method and apparatus for providing a rolling double reset timing for global storage in image sensors

Publications (1)

Publication Number Publication Date
TW200742404A true TW200742404A (en) 2007-11-01

Family

ID=38457794

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110170A TW200742404A (en) 2006-03-23 2007-03-23 Method and apparatus for providing a rolling double reset timing for global storage in image sensors

Country Status (7)

Country Link
US (2) US7427736B2 (zh)
EP (1) EP2002647A2 (zh)
JP (1) JP2009530978A (zh)
KR (1) KR20080113398A (zh)
CN (1) CN101406036A (zh)
TW (1) TW200742404A (zh)
WO (1) WO2007111845A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692978B (zh) * 2018-07-10 2020-05-01 廣州印芯半導體技術有限公司 影像感測器及其像素陣列電路

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4873385B2 (ja) * 2006-07-19 2012-02-08 オリンパス株式会社 固体撮像装置
JP4870528B2 (ja) * 2006-11-17 2012-02-08 オリンパス株式会社 固体撮像装置
US8289430B2 (en) * 2007-02-09 2012-10-16 Gentex Corporation High dynamic range imaging device
US8102443B2 (en) * 2007-03-13 2012-01-24 Renesas Electronics Corporation CCD image sensor having charge storage section between photodiode section and charge transfer section
JP5098831B2 (ja) * 2008-06-06 2012-12-12 ソニー株式会社 固体撮像素子およびカメラシステム
JP5219724B2 (ja) * 2008-10-09 2013-06-26 キヤノン株式会社 固体撮像装置
JP5355026B2 (ja) * 2008-10-09 2013-11-27 キヤノン株式会社 撮像装置
JP5153563B2 (ja) * 2008-10-21 2013-02-27 キヤノン株式会社 固体撮像装置及びその駆動方法
JP2010171318A (ja) * 2009-01-26 2010-08-05 Fujifilm Corp 固体撮像素子、撮像装置、及び固体撮像素子の信号読み出し方法
US8288701B2 (en) * 2009-03-03 2012-10-16 Aptina Imaging Corporation Method and system for controlling power to pixels in an imager
US8184188B2 (en) * 2009-03-12 2012-05-22 Micron Technology, Inc. Methods and apparatus for high dynamic operation of a pixel cell
JP2010251829A (ja) * 2009-04-10 2010-11-04 Olympus Corp 固体撮像素子、カメラシステム、及び信号読み出し方法
JP5402349B2 (ja) * 2009-07-23 2014-01-29 ソニー株式会社 固体撮像装置とその駆動方法、及び電子機器
JP5436173B2 (ja) * 2009-12-02 2014-03-05 キヤノン株式会社 固体撮像装置
JP5521682B2 (ja) * 2010-02-26 2014-06-18 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
WO2011111549A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5601001B2 (ja) * 2010-03-31 2014-10-08 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
US8150255B2 (en) 2010-06-25 2012-04-03 Apple Inc. Flash control for electronic rolling shutter
US8836835B2 (en) * 2010-10-04 2014-09-16 International Business Machines Corporation Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure
KR101728713B1 (ko) * 2010-10-08 2017-04-21 (주) 지안 넓은 동적범위를 갖는 씨모스 이미지 센서 및 이미지 센싱 방법
CN102394239A (zh) * 2011-11-24 2012-03-28 上海宏力半导体制造有限公司 Cmos图像传感器
JPWO2014069394A1 (ja) * 2012-10-30 2016-09-08 株式会社島津製作所 リニアイメージセンサ及びその駆動方法
CN103096002B (zh) * 2013-01-16 2016-08-03 江苏思特威电子科技有限公司 成像装置及其成像方法
KR102106372B1 (ko) * 2013-05-20 2020-05-06 인텔렉추얼디스커버리 주식회사 이미징 장치 및 그 구동방법
KR102047136B1 (ko) * 2013-05-20 2019-11-21 인텔렉추얼디스커버리 주식회사 이미징 장치 및 그 구동방법
KR102152697B1 (ko) * 2013-05-20 2020-09-07 인텔렉추얼디스커버리 주식회사 이미징 장치 및 그 구동방법
US9491380B2 (en) 2013-09-13 2016-11-08 Semiconductor Components Industries, Llc Methods for triggering for multi-camera system
CN103811510B (zh) * 2014-03-07 2016-04-06 上海华虹宏力半导体制造有限公司 图像传感器的像素单元及其形成方法
CN103986887A (zh) * 2014-05-12 2014-08-13 天津大学 初始化数字像素阵列存储器的装置
US10044948B2 (en) * 2015-11-12 2018-08-07 Omnivision Technologies, Inc. Image sensor global shutter supply circuit with variable bandwidth
JP6702704B2 (ja) * 2015-12-04 2020-06-03 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
US10217788B2 (en) 2016-03-01 2019-02-26 Ricoh Company, Ltd. Imaging device
US10110840B2 (en) 2016-10-25 2018-10-23 Semiconductor Components Industries, Llc Image sensor pixels with overflow capabilities
WO2020150494A1 (en) * 2019-01-17 2020-07-23 Stryker Corporation Systems and methods for medical imaging using a rolling shutter imager
US20220179088A1 (en) * 2019-03-08 2022-06-09 Brookman Technology, Inc. Range image sensor and range image pickup device
US20210006742A1 (en) * 2019-07-07 2021-01-07 Himax Imaging Limited Image sensor and timing controller thereof
US11064141B2 (en) * 2019-07-24 2021-07-13 Semiconductor Components Industries, Llc Imaging systems and methods for reducing dark signal non-uniformity across pixels
WO2024031300A1 (en) * 2022-08-09 2024-02-15 Huawei Technologies Co., Ltd. Photon counting pixel and method of operation thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3962431B2 (ja) * 1995-11-07 2007-08-22 カリフォルニア インスティチュート オブ テクノロジー 高ダイナミックレンジのリニア出力を有する画像センサ
US6809766B1 (en) * 1998-03-11 2004-10-26 Micro Technology, Inc. Look ahead rolling shutter system in CMOS sensors
US6965707B1 (en) 2000-09-29 2005-11-15 Rockwell Science Center, Llc Compact active pixel with low-noise snapshot image formation
JP4403687B2 (ja) 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
US7859581B2 (en) * 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
US7332786B2 (en) * 2003-11-26 2008-02-19 Micron Technology, Inc. Anti-blooming storage pixel
US7800675B2 (en) 2004-08-25 2010-09-21 Aptina Imaging Corporation Method of operating a storage gate pixel
KR100755970B1 (ko) * 2004-11-25 2007-09-06 삼성전자주식회사 씨모스 이미지 센서

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692978B (zh) * 2018-07-10 2020-05-01 廣州印芯半導體技術有限公司 影像感測器及其像素陣列電路

Also Published As

Publication number Publication date
US7427736B2 (en) 2008-09-23
US20070221823A1 (en) 2007-09-27
JP2009530978A (ja) 2009-08-27
WO2007111845A2 (en) 2007-10-04
CN101406036A (zh) 2009-04-08
WO2007111845A3 (en) 2007-11-01
EP2002647A2 (en) 2008-12-17
US20090073289A1 (en) 2009-03-19
WO2007111845A9 (en) 2007-12-27
KR20080113398A (ko) 2008-12-30
US8085321B2 (en) 2011-12-27

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