TW200739963A - Light emitting element - Google Patents

Light emitting element

Info

Publication number
TW200739963A
TW200739963A TW096103643A TW96103643A TW200739963A TW 200739963 A TW200739963 A TW 200739963A TW 096103643 A TW096103643 A TW 096103643A TW 96103643 A TW96103643 A TW 96103643A TW 200739963 A TW200739963 A TW 200739963A
Authority
TW
Taiwan
Prior art keywords
conductivity type
side electrode
clad layer
type side
light emitting
Prior art date
Application number
TW096103643A
Other languages
English (en)
Inventor
Hideyoshi Horie
Original Assignee
Mitsubishi Chem Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chem Corp filed Critical Mitsubishi Chem Corp
Publication of TW200739963A publication Critical patent/TW200739963A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW096103643A 2006-02-08 2007-02-01 Light emitting element TW200739963A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006031295A JP2007214276A (ja) 2006-02-08 2006-02-08 発光素子

Publications (1)

Publication Number Publication Date
TW200739963A true TW200739963A (en) 2007-10-16

Family

ID=38345037

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103643A TW200739963A (en) 2006-02-08 2007-02-01 Light emitting element

Country Status (7)

Country Link
US (1) US7977682B2 (zh)
EP (1) EP1986243A1 (zh)
JP (1) JP2007214276A (zh)
KR (1) KR20080095243A (zh)
CN (1) CN101379627B (zh)
TW (1) TW200739963A (zh)
WO (1) WO2007091432A1 (zh)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10985295B2 (en) 2015-11-13 2021-04-20 Epistar Corporation Light-emitting device

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KR101634369B1 (ko) * 2011-12-27 2016-06-28 서울바이오시스 주식회사 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
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US9425359B2 (en) 2013-02-04 2016-08-23 Industrial Technology Research Institute Light emitting diode
TWI557942B (zh) 2013-02-04 2016-11-11 財團法人工業技術研究院 發光二極體
CN103337583B (zh) * 2013-06-26 2016-08-24 深圳雷曼光电科技股份有限公司 Led倒装结构及倒装工艺
CN104638068B (zh) * 2013-11-07 2018-08-24 上海蓝光科技有限公司 一种用于ⅲ-ⅴ族氮化物生长的衬底结构及其制备方法
KR101524726B1 (ko) * 2014-06-20 2015-06-10 실리콘 디스플레이 (주) Led 디스플레이 장치
US9755110B1 (en) 2016-07-27 2017-09-05 Sharp Laboratories Of America, Inc. Substrate with topological features for steering fluidic assembly LED disks
US9985190B2 (en) 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
US10249599B2 (en) 2016-06-29 2019-04-02 eLux, Inc. Laminated printed color conversion phosphor sheets
US9917226B1 (en) 2016-09-15 2018-03-13 Sharp Kabushiki Kaisha Substrate features for enhanced fluidic assembly of electronic devices
US9892944B2 (en) 2016-06-23 2018-02-13 Sharp Kabushiki Kaisha Diodes offering asymmetric stability during fluidic assembly
WO2016163101A1 (en) * 2015-04-07 2016-10-13 Sharp Kabushiki Kaisha Fluidic assembly top-contact led disk
KR101731058B1 (ko) * 2016-02-11 2017-05-11 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US9627437B1 (en) 2016-06-30 2017-04-18 Sharp Laboratories Of America, Inc. Patterned phosphors in through hole via (THV) glass
US10243097B2 (en) 2016-09-09 2019-03-26 eLux Inc. Fluidic assembly using tunable suspension flow
US9837390B1 (en) 2016-11-07 2017-12-05 Corning Incorporated Systems and methods for creating fluidic assembly structures on a substrate
JP6936574B2 (ja) * 2016-12-07 2021-09-15 日機装株式会社 光半導体装置
KR101797561B1 (ko) * 2017-04-18 2017-12-12 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
CN108630793B (zh) * 2018-04-26 2020-02-07 厦门市三安光电科技有限公司 一种发光二极管

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10985295B2 (en) 2015-11-13 2021-04-20 Epistar Corporation Light-emitting device
TWI772253B (zh) * 2015-11-13 2022-08-01 晶元光電股份有限公司 發光元件
US11658269B2 (en) 2015-11-13 2023-05-23 Epistar Corporation Light-emitting device

Also Published As

Publication number Publication date
CN101379627A (zh) 2009-03-04
CN101379627B (zh) 2011-02-09
US7977682B2 (en) 2011-07-12
US20100163895A1 (en) 2010-07-01
WO2007091432A1 (ja) 2007-08-16
EP1986243A1 (en) 2008-10-29
JP2007214276A (ja) 2007-08-23
KR20080095243A (ko) 2008-10-28

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