TW200738737A - Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD) - Google Patents

Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD)

Info

Publication number
TW200738737A
TW200738737A TW096100264A TW96100264A TW200738737A TW 200738737 A TW200738737 A TW 200738737A TW 096100264 A TW096100264 A TW 096100264A TW 96100264 A TW96100264 A TW 96100264A TW 200738737 A TW200738737 A TW 200738737A
Authority
TW
Taiwan
Prior art keywords
tungsten
chemical vapour
vapour deposition
cvd
molybdenum compounds
Prior art date
Application number
TW096100264A
Other languages
English (en)
Inventor
Knud Reuter
Joerg Sundermeyer
Alexei Merkoulov
Wolfgang Stolz
Kerstin Volz
Michael Pokoj
Thomas Ochs
Original Assignee
Starck H C Gmbh Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Starck H C Gmbh Co Kg filed Critical Starck H C Gmbh Co Kg
Publication of TW200738737A publication Critical patent/TW200738737A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C07F11/005—Compounds containing elements of Groups 6 or 16 of the Periodic Table compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/1216—Continuous interengaged phases of plural metals, or oriented fiber containing
    • Y10T428/12174—Mo or W containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW096100264A 2006-01-05 2007-01-04 Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD) TW200738737A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006000823A DE102006000823A1 (de) 2006-01-05 2006-01-05 Wolfram- und Molybdän-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)

Publications (1)

Publication Number Publication Date
TW200738737A true TW200738737A (en) 2007-10-16

Family

ID=37897741

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100264A TW200738737A (en) 2006-01-05 2007-01-04 Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD)

Country Status (8)

Country Link
US (1) US7754908B2 (zh)
EP (1) EP1806352B1 (zh)
JP (1) JP2007182443A (zh)
KR (1) KR20070073636A (zh)
AT (1) ATE493424T1 (zh)
DE (2) DE102006000823A1 (zh)
IL (1) IL180362A0 (zh)
TW (1) TW200738737A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN109134546A (zh) * 2017-06-15 2019-01-04 三星电子株式会社 钨前驱体及使用其形成含钨层的方法

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KR101485520B1 (ko) * 2013-04-25 2015-01-28 한국화학연구원 아미노싸이올레이트를 이용한 텅스텐 전구체, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법
KR101485521B1 (ko) * 2013-04-25 2015-01-28 한국화학연구원 아미노싸이올레이트를 이용한 몰리브데넘 전구체, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법
KR101485519B1 (ko) * 2013-04-25 2015-01-28 한국화학연구원 아미노싸이올레이트를 이용한 텅스텐 전구체, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법
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KR101505125B1 (ko) * 2013-10-14 2015-03-24 한국화학연구원 몰리브데넘 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법
KR101936162B1 (ko) 2014-06-13 2019-01-08 주식회사 유피케미칼 액체 전구체 조성물, 이의 제조 방법, 및 상기 조성물을 이용한 막의 형성 방법
TWI656232B (zh) 2014-08-14 2019-04-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 鉬組成物及其用於形成氧化鉬膜之用途
US20170309490A1 (en) * 2014-09-24 2017-10-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
US10464959B2 (en) 2015-06-18 2019-11-05 Intel Corporation Inherently selective precursors for deposition of second or third row transition metal thin films
KR101581314B1 (ko) * 2015-07-20 2015-12-31 (주)마이크로켐 텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법
KR20180038823A (ko) 2016-10-07 2018-04-17 삼성전자주식회사 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
KR102211654B1 (ko) 2019-02-13 2021-02-03 주식회사 메카로 텅스텐 전구체 화합물 및 이를 이용하여 제조된 텅스텐 함유 박막
KR20210119809A (ko) * 2020-03-25 2021-10-06 삼성전자주식회사 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법
KR102650935B1 (ko) 2021-11-24 2024-03-26 한국화학연구원 신규한 몰리브데넘 또는 텅스텐 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법
KR20230111911A (ko) 2022-01-19 2023-07-26 한국화학연구원 신규한 몰리브데넘 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법
KR102573398B1 (ko) 2022-09-06 2023-08-30 한국화학연구원 이종금속 칼코게나이드 박막형성을 위한 용액공정용 조성물, 및 이를 이용한 박막의 제조방법
WO2023191355A1 (ko) * 2022-03-30 2023-10-05 한국화학연구원 신규한 다성분계 유기금속 화합물, 이를 포함하는 용액공정용 조성물 및 이를 이용한 박막의 제조방법
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109134546A (zh) * 2017-06-15 2019-01-04 三星电子株式会社 钨前驱体及使用其形成含钨层的方法
CN109134546B (zh) * 2017-06-15 2023-03-10 三星电子株式会社 钨前驱体及使用其形成含钨层的方法

Also Published As

Publication number Publication date
EP1806352A1 (de) 2007-07-11
DE502007006068D1 (de) 2011-02-10
ATE493424T1 (de) 2011-01-15
DE102006000823A1 (de) 2007-07-12
KR20070073636A (ko) 2007-07-10
EP1806352B1 (de) 2010-12-29
US7754908B2 (en) 2010-07-13
IL180362A0 (en) 2007-07-04
JP2007182443A (ja) 2007-07-19
US20070160761A1 (en) 2007-07-12

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