TW200732490A - Sputtering with cooled target - Google Patents

Sputtering with cooled target

Info

Publication number
TW200732490A
TW200732490A TW095137348A TW95137348A TW200732490A TW 200732490 A TW200732490 A TW 200732490A TW 095137348 A TW095137348 A TW 095137348A TW 95137348 A TW95137348 A TW 95137348A TW 200732490 A TW200732490 A TW 200732490A
Authority
TW
Taiwan
Prior art keywords
target
sputtering
cooled target
cooling medium
cooled
Prior art date
Application number
TW095137348A
Other languages
English (en)
Inventor
Jorg Krempel-Hesse
Anke Hellmich
Gerd Orgeich
Thomas Hegemann
Original Assignee
Applied Materials Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Gmbh & Co Kg filed Critical Applied Materials Gmbh & Co Kg
Publication of TW200732490A publication Critical patent/TW200732490A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
TW095137348A 2006-02-22 2006-10-11 Sputtering with cooled target TW200732490A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06110305A EP1826811A1 (de) 2006-02-22 2006-02-22 Sputtern mit gekühltem Target

Publications (1)

Publication Number Publication Date
TW200732490A true TW200732490A (en) 2007-09-01

Family

ID=36575959

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137348A TW200732490A (en) 2006-02-22 2006-10-11 Sputtering with cooled target

Country Status (6)

Country Link
US (1) US20070240977A1 (zh)
EP (1) EP1826811A1 (zh)
JP (1) JP2007224419A (zh)
KR (1) KR20070085127A (zh)
CN (1) CN101070590A (zh)
TW (1) TW200732490A (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
JP5722346B2 (ja) 2010-01-16 2015-05-20 日本板硝子株式会社 高品質放射制御コーティング、放射制御ガラスおよび製造方法
US9862640B2 (en) 2010-01-16 2018-01-09 Cardinal Cg Company Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US11155493B2 (en) 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
CN101805133A (zh) * 2010-04-02 2010-08-18 洛阳新晶润工程玻璃有限公司 一种提高锡基低辐射镀膜玻璃生产效率的方法
EP2420587B1 (de) 2010-08-17 2012-10-31 Helmholtz-Zentrum Geesthacht Zentrum für Material- und Küstenforschung GmbH Verfahren zur Erzeugung einer farbigen Überzugsschicht mittels Kathodenstrahlzerstäuben
EP2463399B1 (de) 2010-12-08 2014-10-22 Helmholtz-Zentrum Geesthacht Zentrum für Material- und Küstenforschung GmbH Magnesiumbauteile mit verbessertem Korrosionsschutz
CN102808158A (zh) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 银靶材溅射系统
CN102808157A (zh) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 溅射靶材维护用管道系统
DE102012006717A1 (de) * 2012-04-04 2013-10-10 Oerlikon Trading Ag, Trübbach An eine indirekte Kühlvorrichtung angepasstes Target
CN104694887A (zh) * 2013-12-09 2015-06-10 财团法人金属工业研究发展中心 镀膜设备
JP6396059B2 (ja) * 2014-03-31 2018-09-26 株式会社カネカ 透明導電フィルムの製造方法
CN104409176A (zh) * 2014-11-25 2015-03-11 韦江华 一种耐高温电缆电线的冷却设备
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
DE102020100061A1 (de) 2020-01-03 2021-07-08 Schott Ag Kühlvorrichtung und Kühlverfahren für Sputtertargets
CN112899627B (zh) * 2021-01-16 2022-09-27 重庆电子工程职业学院 一种靶材安装结构、磁控溅射设备及磁控溅射方法
WO2023274558A1 (de) 2021-07-02 2023-01-05 Schott Ag Kühlvorrichtung und kühlverfahren für sputtertargets

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3613801A1 (de) * 1985-06-20 1987-01-02 Balzers Hochvakuum Anordnung zur kuehlung von flaechen
US5435379A (en) * 1992-08-14 1995-07-25 Texas Instruments Incorporated Method and apparatus for low-temperature semiconductor processing
US5407551A (en) * 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
US5507931A (en) * 1993-12-30 1996-04-16 Deposition Technologies, Inc. Sputter deposition process
KR100291330B1 (ko) * 1998-07-02 2001-07-12 윤종용 반도체장치제조용스퍼터링설비및이를이용한스퍼터링방법
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
JP4630443B2 (ja) * 2000-10-23 2011-02-09 キヤノン株式会社 スパッタリングによる成膜方法
US6406599B1 (en) * 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target

Also Published As

Publication number Publication date
KR20070085127A (ko) 2007-08-27
US20070240977A1 (en) 2007-10-18
EP1826811A1 (de) 2007-08-29
CN101070590A (zh) 2007-11-14
JP2007224419A (ja) 2007-09-06

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