TW200730731A - Wide range pressure control using turbo pump - Google Patents
Wide range pressure control using turbo pumpInfo
- Publication number
- TW200730731A TW200730731A TW095137039A TW95137039A TW200730731A TW 200730731 A TW200730731 A TW 200730731A TW 095137039 A TW095137039 A TW 095137039A TW 95137039 A TW95137039 A TW 95137039A TW 200730731 A TW200730731 A TW 200730731A
- Authority
- TW
- Taiwan
- Prior art keywords
- wide range
- pressure control
- pump
- range pressure
- turbo pump
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01C—ROTARY-PISTON OR OSCILLATING-PISTON MACHINES OR ENGINES
- F01C1/00—Rotary-piston machines or engines
- F01C1/24—Rotary-piston machines or engines of counter-engagement type, i.e. the movement of co-operating members at the points of engagement being in opposite directions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D19/00—Axial-flow pumps
- F04D19/02—Multi-stage pumps
- F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D19/00—Axial-flow pumps
- F04D19/02—Multi-stage pumps
- F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
- F04D19/042—Turbomolecular vacuum pumps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D27/00—Control, e.g. regulation, of pumps, pumping installations or pumping systems specially adapted for elastic fluids
- F04D27/02—Surge control
- F04D27/0253—Surge control by throttling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Non-Positive Displacement Air Blowers (AREA)
- Chemical Vapour Deposition (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/245,797 US7438534B2 (en) | 2005-10-07 | 2005-10-07 | Wide range pressure control using turbo pump |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200730731A true TW200730731A (en) | 2007-08-16 |
Family
ID=37910064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095137039A TW200730731A (en) | 2005-10-07 | 2006-10-05 | Wide range pressure control using turbo pump |
Country Status (7)
Country | Link |
---|---|
US (1) | US7438534B2 (zh) |
EP (1) | EP1934043B1 (zh) |
JP (1) | JP5455371B2 (zh) |
KR (1) | KR101342309B1 (zh) |
CN (1) | CN101282836B (zh) |
TW (1) | TW200730731A (zh) |
WO (1) | WO2007044298A2 (zh) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101495925B (zh) * | 2006-03-16 | 2013-06-05 | 应用材料公司 | 用于改进电子装置制造系统的操作的方法与设备 |
JP2008072030A (ja) * | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法 |
WO2008147522A1 (en) * | 2007-05-25 | 2008-12-04 | Applied Materials, Inc. | Methods and apparatus for assembling and operating electronic device manufacturing systems |
WO2008147524A1 (en) * | 2007-05-25 | 2008-12-04 | Applied Materials, Inc. | Methods and apparatus for efficient operation of an abatement system |
US20090018688A1 (en) * | 2007-06-15 | 2009-01-15 | Applied Materials, Inc. | Methods and systems for designing and validating operation of abatement systems |
CN101835521A (zh) * | 2007-10-26 | 2010-09-15 | 应用材料公司 | 利用改进燃料线路的用于智能减废的方法与设备 |
US20090301579A1 (en) * | 2008-06-10 | 2009-12-10 | Gnb Corporation | Vacuum pressure systems with vacuum chamber full-range, closed-loop pressure control |
US9416448B2 (en) * | 2008-08-29 | 2016-08-16 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method |
US8657584B2 (en) * | 2010-02-16 | 2014-02-25 | Edwards Limited | Apparatus and method for tuning pump speed |
KR101014651B1 (ko) * | 2010-08-06 | 2011-02-16 | 이철규 | 반도체 제조 공정 장비의 마스터 콘트롤러에 연결된 게이트 밸브용 인터락 신호 생성 장치 및 방법 |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
JP5337185B2 (ja) * | 2011-03-11 | 2013-11-06 | 株式会社東芝 | 圧力制御装置 |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US20130025786A1 (en) * | 2011-07-28 | 2013-01-31 | Vladislav Davidkovich | Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes |
US20130118609A1 (en) * | 2011-11-12 | 2013-05-16 | Thomas Neil Horsky | Gas flow device |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
KR101414159B1 (ko) * | 2012-08-14 | 2014-07-01 | 한국표준과학연구원 | 소형 기계식 가스 압축장치, 압축방법, 그 압축장치를 갖는 분석 시스템 및 분석방법 |
US20140083544A1 (en) | 2012-09-21 | 2014-03-27 | Brian Chan | Manifolds and methods and systems using them |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
CN103728996B (zh) * | 2013-12-25 | 2016-06-15 | 合肥京东方光电科技有限公司 | 压力控制器及其开口度调节方法 |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
CN104373158B (zh) * | 2014-05-30 | 2017-01-04 | 门冉 | 一种锅炉驱动的汽轮机组的控制方法 |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
DE102016220107B4 (de) * | 2016-10-14 | 2020-01-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Entgasungsvorrichtung |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
JP6996289B2 (ja) * | 2016-12-26 | 2022-01-17 | 株式会社島津製作所 | バルブ装置 |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
KR101990995B1 (ko) * | 2018-07-27 | 2019-09-30 | 이형섭 | 진공 챔버의 압력 안정화 장치 |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10988843B2 (en) * | 2019-07-30 | 2021-04-27 | Applied Materials, Inc. | System for determining cleaning process endpoint |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5443368A (en) | 1993-07-16 | 1995-08-22 | Helix Technology Corporation | Turbomolecular pump with valves and integrated electronic controls |
JPH03107599A (ja) * | 1989-09-20 | 1991-05-07 | Ntn Corp | 軸流ポンプ装置の制御システム |
JP3158612B2 (ja) * | 1992-03-24 | 2001-04-23 | 株式会社日立製作所 | ドライエッチング方法 |
JPH0633231A (ja) * | 1992-07-20 | 1994-02-08 | Hitachi Sci Syst:Kk | イオンスパッタリング装置 |
GB9717400D0 (en) * | 1997-08-15 | 1997-10-22 | Boc Group Plc | Vacuum pumping systems |
EP1106807B1 (en) * | 1999-12-03 | 2004-08-11 | Nissan Motor Co., Ltd. | Coordinated valve timing and throttle control for controlling intake air |
JP3926977B2 (ja) * | 2000-09-21 | 2007-06-06 | 株式会社東芝 | 半導体製造方法 |
US6598615B1 (en) | 2000-11-07 | 2003-07-29 | Applied Materials, Inc. | Compact independent pressure control and vacuum isolation for a turbomolecular pumped plasma reaction chamber |
US6869880B2 (en) * | 2002-01-24 | 2005-03-22 | Applied Materials, Inc. | In situ application of etch back for improved deposition into high-aspect-ratio features |
US7278831B2 (en) * | 2003-12-31 | 2007-10-09 | The Boc Group, Inc. | Apparatus and method for control, pumping and abatement for vacuum process chambers |
US7140847B2 (en) * | 2004-08-11 | 2006-11-28 | The Boc Group, Inc. | Integrated high vacuum pumping system |
FR2878913B1 (fr) * | 2004-12-03 | 2007-01-19 | Cit Alcatel | Controle des pressions partielles de gaz pour optimisation de procede |
-
2005
- 2005-10-07 US US11/245,797 patent/US7438534B2/en active Active
-
2006
- 2006-09-29 JP JP2008534596A patent/JP5455371B2/ja not_active Expired - Fee Related
- 2006-09-29 WO PCT/US2006/038448 patent/WO2007044298A2/en active Application Filing
- 2006-09-29 EP EP06816029.0A patent/EP1934043B1/en active Active
- 2006-09-29 CN CN2006800371772A patent/CN101282836B/zh not_active Expired - Fee Related
- 2006-10-05 TW TW095137039A patent/TW200730731A/zh unknown
-
2008
- 2008-04-04 KR KR1020087008286A patent/KR101342309B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20070079758A1 (en) | 2007-04-12 |
EP1934043A2 (en) | 2008-06-25 |
JP2009511248A (ja) | 2009-03-19 |
WO2007044298A2 (en) | 2007-04-19 |
US7438534B2 (en) | 2008-10-21 |
JP5455371B2 (ja) | 2014-03-26 |
CN101282836B (zh) | 2012-09-05 |
KR101342309B1 (ko) | 2013-12-16 |
EP1934043A4 (en) | 2012-04-18 |
WO2007044298A3 (en) | 2008-01-31 |
KR20080056193A (ko) | 2008-06-20 |
EP1934043B1 (en) | 2014-11-19 |
CN101282836A (zh) | 2008-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200730731A (en) | Wide range pressure control using turbo pump | |
FR2878913B1 (fr) | Controle des pressions partielles de gaz pour optimisation de procede | |
TW200636856A (en) | Semiconductor processing apparatus and method | |
WO2014132057A3 (en) | Valve assembly | |
MY146714A (en) | Removable valve seat member for diaphragm valve | |
ATE449297T1 (de) | Regelung von überkritischem druck für dampfverdichtungssystem | |
TW200943456A (en) | Semiconductor processing system including vaporizer and method for using same | |
TW200733184A (en) | Gas supply system, substrate processing apparatus and gas supply method | |
TW200700950A (en) | A method and apparatus for process control in time division multiplexed (tdm) etch processes | |
AU2010206569A8 (en) | Method for increasing compressed air efficiency in a pump | |
AU2001229908A1 (en) | High volume electronic gas regulator | |
WO2009098125A8 (en) | Flow control in high performance liquid chromatography | |
MX2007000684A (es) | Adaptacion de filtro de intervalo-principal con condiciones iniciales ajustables para circuitos de control electro-pneumatico. | |
EP2411644A4 (en) | PRESSURE SYSTEM WITH VARIABLE ACTUATION FOR INDEPENDENT PRESSURE CONTROL | |
TW200729306A (en) | Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases | |
TW200610049A (en) | Method and system for supplying carbon dioxide | |
PL2128406T3 (pl) | Sposób eksploatacji turbiny gazowej | |
TW200637973A (en) | Vacuum pumping arrangement | |
TW200504484A (en) | Device for feeding gas to chamber and method for controlling chamber inner pressure using the device | |
TW200603310A (en) | Methods of processing a substrate with minimal scalloping | |
RU2014110035A (ru) | Система управления высокочастотным осцилляционным вентилятором легких | |
WO2009063749A1 (ja) | 燃料電池システム | |
SE0501640L (sv) | Flödesregultator | |
DE602005012050D1 (de) | Drucksteuerverfahren | |
GB0504033D0 (en) | A method and apparatus for improving the operation of positive displacement expanders |