TW200729311A - Liquid processing method and liquid processing apparatus - Google Patents

Liquid processing method and liquid processing apparatus

Info

Publication number
TW200729311A
TW200729311A TW095143394A TW95143394A TW200729311A TW 200729311 A TW200729311 A TW 200729311A TW 095143394 A TW095143394 A TW 095143394A TW 95143394 A TW95143394 A TW 95143394A TW 200729311 A TW200729311 A TW 200729311A
Authority
TW
Taiwan
Prior art keywords
liquid processing
liquid
processing method
processing apparatus
target substrate
Prior art date
Application number
TW095143394A
Other languages
English (en)
Other versions
TWI343599B (zh
Inventor
Noritaka Uchida
Mitsunori Nakamori
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005339133A external-priority patent/JP4680044B2/ja
Priority claimed from JP2005362809A external-priority patent/JP4675772B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200729311A publication Critical patent/TW200729311A/zh
Application granted granted Critical
Publication of TWI343599B publication Critical patent/TWI343599B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
TW095143394A 2005-11-24 2006-11-23 Liquid processing method and liquid processing apparatus TW200729311A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005339133A JP4680044B2 (ja) 2005-11-24 2005-11-24 液処理方法、液処理装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
JP2005362809A JP4675772B2 (ja) 2005-12-16 2005-12-16 液処理方法、液処理装置、制御プログラム、およびコンピュータ読取可能な記憶媒体

Publications (2)

Publication Number Publication Date
TW200729311A true TW200729311A (en) 2007-08-01
TWI343599B TWI343599B (zh) 2011-06-11

Family

ID=37607432

Family Applications (2)

Application Number Title Priority Date Filing Date
TW099112696A TWI460774B (zh) 2005-11-24 2006-11-23 Liquid treatment method and liquid treatment device
TW095143394A TW200729311A (en) 2005-11-24 2006-11-23 Liquid processing method and liquid processing apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW099112696A TWI460774B (zh) 2005-11-24 2006-11-23 Liquid treatment method and liquid treatment device

Country Status (3)

Country Link
EP (1) EP1791161B1 (zh)
KR (1) KR101061945B1 (zh)
TW (2) TWI460774B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108172493A (zh) * 2016-12-07 2018-06-15 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US20090120368A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Rotating temperature controlled substrate pedestal for film uniformity
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9355883B2 (en) 2011-09-09 2016-05-31 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US9316443B2 (en) * 2012-08-23 2016-04-19 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9748120B2 (en) 2013-07-01 2017-08-29 Lam Research Ag Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus
US9093482B2 (en) * 2012-10-12 2015-07-28 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9245777B2 (en) 2013-05-15 2016-01-26 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus
JP6231328B2 (ja) * 2013-08-20 2017-11-15 株式会社Screenホールディングス 基板処理方法および基板処理装置
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
KR20170132952A (ko) * 2016-05-24 2017-12-05 삼성디스플레이 주식회사 전자 장치 및 이의 제조 장치, 및 전자 장치의 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US20020096196A1 (en) * 2001-01-23 2002-07-25 Takayuki Toshima Substrate processing apparatus and substrate processing method
JP2002343759A (ja) * 2001-05-21 2002-11-29 Tokyo Electron Ltd 液処理装置および液処理方法
TWI261875B (en) * 2002-01-30 2006-09-11 Tokyo Electron Ltd Processing apparatus and substrate processing method
JP3993048B2 (ja) * 2002-08-30 2007-10-17 大日本スクリーン製造株式会社 基板処理装置
JP4333866B2 (ja) * 2002-09-26 2009-09-16 大日本スクリーン製造株式会社 基板処理方法および基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108172493A (zh) * 2016-12-07 2018-06-15 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN108172493B (zh) * 2016-12-07 2020-06-26 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

Also Published As

Publication number Publication date
KR101061945B1 (ko) 2011-09-05
KR20070055346A (ko) 2007-05-30
TWI343599B (zh) 2011-06-11
EP1791161A2 (en) 2007-05-30
EP1791161B1 (en) 2013-08-14
TW201032268A (en) 2010-09-01
TWI460774B (zh) 2014-11-11
EP1791161A3 (en) 2011-08-31

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